CN104242254A - High-power IGBT temperature sampling protective circuit - Google Patents
High-power IGBT temperature sampling protective circuit Download PDFInfo
- Publication number
- CN104242254A CN104242254A CN201410436048.7A CN201410436048A CN104242254A CN 104242254 A CN104242254 A CN 104242254A CN 201410436048 A CN201410436048 A CN 201410436048A CN 104242254 A CN104242254 A CN 104242254A
- Authority
- CN
- China
- Prior art keywords
- temperature
- amplifier
- resistance
- circuit
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to a high-power IGBT temperature sampling protective circuit. The circuit comprises a temperature sampling amplifying circuit, a temperature sampling reference source, a difference isolating and amplifying circuit, a voltage follower circuit, a temperature protection latch circuit and a temperature protection reference source. The temperature sampling amplifying circuit is used for collecting temperature signals, the temperature sampling reference source is used for providing reference voltage for the temperature sampling amplifying circuit, the difference isolating and amplifying circuit is used for isolating and amplifying the signals collected by the temperature sampling amplifying circuit, the voltage follower circuit is used for transmitting the sampling signals output by the difference isolating and amplifying circuit to an AD sampling module, the temperature protection latch circuit is used for comparing, protecting and latching the sampling signals output by the voltage follower circuit, and the temperature protection reference source is used for providing reference protective voltage for the temperature protection latch circuit. The high-power IGBT temperature sampling protective circuit is high in accuracy and reliability.
Description
Technical field
The present invention relates to a kind of protective circuit, especially relate to a kind of temperature sampling protective circuit on high-power IGBT, belong to electric and electronic technical field.
Background technology
High-power IGBT module is widely used in electric and electronic technical field, is a kind of components and parts costly; Because of its serviceability of influence of temperature change, when IGBT junction temperature overrate, can there is permanent damages in IGBT module, so need IGBT module installation temperature protective device, thus IGBT module is worked in the temperature range allowed;
In actual use, high-power IGBT is high frequency, high-current switch device, can produce comparatively strong electromagnetic radiation during its work, and conventional IGBT temperature collection protective circuit is easily subject to electromagnetic interference and causes sampling precision deviation even to be damaged; Therefore IGBT temperature gathers protective circuit needs to adopt a kind of circuit design suppressed with strong common mode disturbances.
Simultaneously; high-power IGBT is a kind of heater element; due to its high-power heat-dissipation; when it normally works, ambient temperature changes greatly, and conventional IGBT temperature sample circuit works in this large-temperature range environment, lacks corresponding temperature drift rejection ability; thus cause its precision inadequate; therefore need a kind of novel IGBT temperature to gather protective circuit, it has certain temperature drift rejection ability, and variations in temperature can be avoided the impact of sampling precision.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide a kind of precision high and the high-power IGBT temperature sampling protective circuit of good reliability.
The object of the present invention is achieved like this: a kind of high-power IGBT temperature sampling protective circuit, and described circuit includes:
Temperature sampling amplifying circuit: for collecting temperature signal;
Temperature sampling a reference source: for providing reference voltage to temperature sampling amplifying circuit;
Difference isolating amplifier circuit: the signal of temperature sampling amplifying circuit collection is isolated and amplified;
Voltage follower circuit: the sampled signal that difference isolating amplifier circuit exports is passed to AD sampling module;
Temperature protection latch cicuit: the sampled signal that voltage follower circuit exports is compared and protects and latch;
Temperature protection a reference source: provide benchmark to protect voltage to temperature protection latch cicuit.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, described temperature sampling a reference source and temperature protection a reference source are voltage stabilizing circuit, the bleeder circuit of this voltage stabilizing circuit is by the first resistance, adjustable resistance, second resistance and the 3rd resistance be serially connected with high level VCC and in analog between, the tie point between the second resistance and the 3rd resistance is accessed in the reference pole of one voltage-stabiliser tube, the anode access of voltage-stabiliser tube in analog, the negative electrode of voltage-stabiliser tube is through the first resistance access high level VCC, and high level VCC accesses in analog by decoupling capacitor after the first resistance, the negative electrode stable output voltage of voltage-stabiliser tube, the negative electrode output reference voltage of voltage-stabiliser tube in temperature sampling a reference source, the negative electrode output reference protection voltage of voltage-stabiliser tube in temperature protection a reference source.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, the model of described voltage-stabiliser tube is TL431.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, described temperature sampling amplifying circuit includes bleeder circuit, this bleeder circuit by resistance four, thermistor and resistance five be serially connected with reference voltage and in analog between, the tie point output temperature signal between described thermistor and resistance five; This temperature signal is output temperature sampled signal after amplifier amplifies.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, the temperature signal that tie point between thermistor described above and resistance five exports is through the in-phase input end of resistance access amplifier one, the inverting input of amplifier one is connected with its output, the output of this amplifier accesses the in-phase input end of amplifier two through resistance, the in-phase input end of this amplifier two through a resistance access in analog, the inverting input of this amplifier two through a resistance access in analog, the inverting input of this amplifier two accesses its output through another resistance simultaneously, the output of this amplifier two is through a resistance output temperature sampled signal.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, described resistance four one end is connected with reference voltage, and the other end is through common mode filtering capacity earth, and described resistance is held and is connected in analog May Day, and the other end is through common mode filtering capacity earth.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, described difference isolating amplifier circuit includes optical isolation amplifier, the in-phase input end of the temperature sampling signal access optical isolation amplifier that said temperature amplifier circuit exports, the inverting input access of optical isolation amplifier in analog, the difference output both positive and negative polarity of described optical isolation amplifier is connected to amplifier three in-phase input end and inverting input respectively after resistance, access in analog after electric capacity through being arranged in parallel of the in-phase input end of above-mentioned amplifier three and resistance, the output of amplifier three is accessed after electric capacity through being arranged in parallel of the inverting input of above-mentioned amplifier three and resistance, the output output temperature sampled signal of described amplifier three inputs AD sampling module after voltage follower.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, the model of above-mentioned optical isolation amplifier is HCPL-7800, and the model of above-mentioned amplifier three is MC34071.
A kind of high-power IGBT temperature sampling of the present invention protective circuit; described temperature protection latch cicuit includes comparator and trigger; the in-phase input end of said temperature sampled signal input comparator; the inverting input of the benchmark protection voltage input comparator of temperature protection a reference source; the output of described comparator is provided with a pull-up resistor, and this output is connected to the control end of trigger.
A kind of high-power IGBT temperature sampling of the present invention protective circuit, the model of described amplifier one, amplifier two and amplifier four is LM358, and the model of comparator is LM211, and the model of trigger is CD4013.
Compared with prior art, the invention has the beneficial effects as follows:
The temperature sampling a reference source of a kind of high-power IGBT temperature sampling of the present invention protective circuit and temperature protection a reference source adopt digital and Adjustable, can ensure that reference voltage value and benchmark protect the accurate of magnitude of voltage, thus improve sampling protection precision; Temperature sampling of the present invention comes the reference voltage in Tc sampled reference source and the benchmark protection voltage of temperature protection a reference source by regulating adjustable resistance resistance size; Because voltage-stabiliser tube TL431 obtains stabilized voltage characteristic, the stable output of reference voltage and benchmark protection voltage can be ensured when power supply of sampling slightly fluctuates or divider resistance resistance affects by temperature drift.
A kind of high-power IGBT temperature sampling of the present invention protective circuit adopts multistage amplifier circuit, makes circuit have comparatively strong anti-interference ability, ensures sampled signal precision simultaneously, applicable in high electromagnetic noise environment.Optical isolation amplifier HCPL-7800 has larger common-mode rejection ratio, the input filtering capacitor combination energy filtering sampled signal common mode disturbances in itself and rear class differential amplifier circuit, temperature sampling amplifying circuit.In addition, the voltage follower design in temperature sampling amplifying circuit and voltage follower circuit, at sampled signal input and output, ensures sampled signal integrality, improves sampling precision.
, there is overheat protector fault and fault-signal can be made to keep until controlled reset in a kind of high-power IGBT temperature sampling of the present invention protective circuit temperature protection band latch.After can avoiding temperature protection, because basic fault is not got rid of, temperature drops to the secondary misoperation that below protection value causes.
Accompanying drawing explanation
Fig. 1 is the circuit block diagram of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 2 is the partial circuit figure of the temperature sampling a reference source of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 3 is the partial circuit figure of the temperature sampling amplifying circuit of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 4 is the partial circuit figure of the difference isolating amplifier circuit of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 5 is the partial circuit figure of the voltage follower of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 6 is the partial circuit figure of the temperature protection a reference source of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Fig. 7 is the partial circuit figure of the temperature protection latch cicuit of a kind of high-power IGBT temperature sampling of the present invention protective circuit.
Embodiment
See Fig. 1, a kind of high-power IGBT temperature sampling protective circuit that the present invention relates to, described circuit includes:
Temperature sampling amplifying circuit: for collecting temperature signal;
Temperature sampling a reference source: for providing reference voltage to temperature sampling amplifying circuit;
Difference isolating amplifier circuit: the signal of temperature sampling amplifying circuit collection is isolated and amplified;
Voltage follower circuit: the sampled signal that difference isolating amplifier circuit exports is passed to AD sampling module;
Temperature protection latch cicuit: the sampled signal that voltage follower circuit exports is compared and protects and latch;
Temperature protection a reference source: protect voltage for providing benchmark to temperature protection latch cicuit;
Below in conjunction with Fig. 2 ~ 7, couple the present invention is specifically addressed:
See Fig. 2 and Fig. 6, described temperature sampling a reference source and temperature protection a reference source are voltage stabilizing circuit, this voltage stabilizing circuit adopts TL431 voltage-stabiliser tube, the difference of the voltage stabilizing circuit that this voltage stabilizing circuit and the common TL431 of employing are formed is: adopt adjustable resistance with reference on the bleeder circuit of pole, thus this voltage stabilizing circuit can be regulated as required, concretely---bleeder circuit is by the first resistance (R35 in Fig. 2, R1 in Fig. 6), adjustable resistance (the RR1 in Fig. 2, R2 in Fig. 6), second resistance (the R36 in Fig. 2, R3 in Fig. 6) and the 3rd resistance (R37 in Fig. 2, R4 in Fig. 6) be serially connected with high level VCC and in analog between, and the U4 in voltage-stabiliser tube TL431(Fig. 2, U3 in Fig. 6) reference pole access tie point between the second resistance and the 3rd resistance, the anode access of voltage-stabiliser tube TL431 in analog, the negative electrode of voltage-stabiliser tube TL431 is through the first resistance access high level VCC, and high level VCC passes through the decoupling capacitor (CC1 in Fig. 2 after the first resistance, C1 in Fig. 6) access is in analog, negative electrode (being also first pin of U4) the output reference voltage Vref of voltage-stabiliser tube TL431, negative electrode (being also first pin of U3) the output reference protection voltage of voltage-stabiliser tube TL431, the model of above-mentioned voltage-stabiliser tube U3, U4 is TL431, and in diagram, voltage-stabiliser tube U4 adopts SOP-8 encapsulation, and it has 8 pins, 8 pinouts are followed successively by: the 1st pin is negative electrode (Cathode), 2nd ~ 5 pin are empty pin, and the 6th pin is anode (Anode), the 7th pin is empty pin, the 8th pin is reference pole (Reference),
Said temperature sampled reference source circuit regulates Vref place reference voltage to reach accurate desired value by regulating adjustable resistance RR1 resistance size; When supply voltage VCC has fluctuation or divider resistance BR1, BR41 to have temperature to float, voltage-stabiliser tube TL431 forms negative feedback to Vref place temperature sampling reference voltage output end, ensures that temperature sampling reference voltage is stablized, ripple disable.
See Fig. 3, described temperature sampling amplifying circuit includes bleeder circuit, this bleeder circuit by resistance four (in Fig. 3 BR1), thermistor (in Fig. 3 RT) and resistance five (in Fig. 3 BR41) be serially connected with reference voltage and in analog between (preferred, described resistance four one end is connected with reference voltage, the other end is through common mode filtering electric capacity BC1 ground connection, described resistance is held and is connected in analog May Day, the other end is through common mode filtering electric capacity BC3 ground connection), the tie point output temperature signal between described thermistor and resistance five; This temperature signal exports after amplifier amplifies; Concretely, this temperature signal is through the in-phase input end of resistance access amplifier one (LEM1A in Fig. 3), the inverting input of amplifier one is connected with its output, the output of this amplifier accesses the in-phase input end of amplifier two (LEM1B in Fig. 3) through resistance, the in-phase input end of this amplifier two through a resistance access in analog, the inverting input of this amplifier two through a resistance access in analog, the inverting input of this amplifier two accesses its output through another resistance simultaneously, and the output of this amplifier two is through a resistance output temperature sampled signal; The model of above-mentioned amplifier one and amplifier two is LM358;
Above-mentioned thermistor RT is the inner thermo-sensitive resistor of IGBT, and its resistance can obtain corresponding temperature by looking into resistance/thermometer; BR1, RT, BR41 are to temperature sampling reference voltage dividing potential drop; Operational amplifier LEM1A connection coating-forming voltage follower; On divider resistance BR41, voltage is passed to BR6 through transmitting resistance BR5 and voltage follower LEM1A, and its output impedance is approximately zero; BC1, BC3 are high pressure ceramic disc capacitor, be connected can suppress thermo-sensitive resistor RT two ends common mode disturbances with the earth; BR6, BR2, BR11, BR10 and operational amplifier LEM1B composition amplifying circuit;
See Fig. 4, described difference isolating amplifier circuit includes optical isolation amplifier U3, the in-phase input end of the temperature sampling signal access optical isolation amplifier U3 that said temperature amplifier circuit exports, the inverting input access of optical isolation amplifier U3 in analog, the difference output both positive and negative polarity of described optical isolation amplifier U3 is connected to amplifier three (OP1 in Fig. 4) in-phase input end and inverting input respectively after resistance, access in analog after electric capacity through being arranged in parallel of the in-phase input end of above-mentioned amplifier three and resistance, the output of amplifier three is accessed after electric capacity through being arranged in parallel of the inverting input of above-mentioned amplifier three and resistance, the output output temperature sampled signal of described amplifier three inputs AD sampling module after voltage follower as shown in Figure 5, the model of above-mentioned optical isolation amplifier U3 is HCPL-7800, and the model of above-mentioned amplifier three is MC34071,
See Fig. 5, described voltage follower includes amplifier four (LEM3A in Fig. 5), the in-phase input end of the temperature sampling signal input amplifier four that above-mentioned difference isolating amplifier circuit exports, the inverting input of described amplifier four accesses its output through resistance, and signal is inputed to AD sampling module by this output; The model of amplifier four is LM358;
See Fig. 7, described temperature protection latch cicuit includes comparator U1 and trigger U2, the in-phase input end of said temperature sampled signal input comparator U1, the inverting input of the benchmark protection voltage input comparator U1 of temperature protection a reference source, the output of described comparator U1 is provided with a pull-up resistor, and this output is connected to the control end CP1 of trigger U2; The model of described comparator U1 is LM211, and the model of trigger U2 is CD4013;
The benchmark of temperature protection a reference source protection voltage and temperature sampling signal compare by comparator U1, when temperature sampling signal level is higher than (when temperature is higher than design temperature) during benchmark protection voltage, to rear class d type flip flop U2 output protection signal; U2 is binary channels d type flip flop CD4013; Its DI pin is that signal input part is connected to 5V high level, and when pulse input end CP1 pin level uprises, Q1 pin exports high level latch up protection signal, and R1 is d type flip flop reset pin, and temperature protection signal can be resetted by host computer;
Accurate sampling in real time can be carried out to high-power IGBT internal temperature after adopting the present invention; And the present invention has stronger anti-common mode disturbances ability, sampling error can not be caused because of the strong electromagnetic interference environment around IGBT operating room; Simultaneously the present invention has temperature drift sampling error rejection ability, floats the sampling error caused when operating ambient temperature can be suppressed to change by temperature; And temperature protection signal band latch function of the present invention, can not decline and automatic resetting because of temperature after protection.
In addition: it should be noted that above-mentioned embodiment is only an optimization scheme of this patent, any change that those skilled in the art does according to above-mentioned design or improvement, all within the protection range of this patent.
Claims (10)
1. a high-power IGBT temperature sampling protective circuit, is characterized in that: described circuit includes:
Temperature sampling amplifying circuit: for collecting temperature signal;
Temperature sampling a reference source: for providing reference voltage to temperature sampling amplifying circuit;
Difference isolating amplifier circuit: the signal of temperature sampling amplifying circuit collection is isolated and amplified;
Voltage follower circuit: the sampled signal that difference isolating amplifier circuit exports is passed to AD sampling module;
Temperature protection latch cicuit: the sampled signal that voltage follower circuit exports is compared and protects and latch;
Temperature protection a reference source: provide benchmark to protect voltage to temperature protection latch cicuit.
2. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 1, it is characterized in that: described temperature sampling a reference source and temperature protection a reference source are voltage stabilizing circuit, the bleeder circuit of this voltage stabilizing circuit is by the first resistance, adjustable resistance, second resistance and the 3rd resistance be serially connected with high level VCC and in analog between, the tie point between the second resistance and the 3rd resistance is accessed in the reference pole of one voltage-stabiliser tube, the anode access of voltage-stabiliser tube in analog, the negative electrode of voltage-stabiliser tube is through the first resistance access high level VCC, and high level VCC accesses in analog by decoupling capacitor after the first resistance, the negative electrode stable output voltage of voltage-stabiliser tube, the negative electrode output reference voltage of voltage-stabiliser tube in temperature sampling a reference source, the negative electrode output reference protection voltage of voltage-stabiliser tube in temperature protection a reference source.
3. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 2, is characterized in that: the model of described voltage-stabiliser tube is TL431.
4. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 2, it is characterized in that: described temperature sampling amplifying circuit includes bleeder circuit, this bleeder circuit by resistance four, thermistor and resistance five be serially connected with reference voltage and in analog between, the tie point output temperature signal between described thermistor and resistance five; This temperature signal is output temperature sampled signal after amplifier amplifies.
5. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 4, it is characterized in that: the temperature signal that the tie point between thermistor described above and resistance five exports is through the in-phase input end of resistance access amplifier one, the inverting input of amplifier one is connected with its output, the output of this amplifier accesses the in-phase input end of amplifier two through resistance, the in-phase input end of this amplifier two through a resistance access in analog, the inverting input of this amplifier two through a resistance access in analog, the inverting input of this amplifier two accesses its output through another resistance simultaneously, the output of this amplifier two is through a resistance output temperature sampled signal.
6. a kind of high-power IGBT temperature sampling protective circuit as described in claim 4 or 5; it is characterized in that: described resistance four one end is connected with reference voltage; the other end is through common mode filtering capacity earth, and described resistance is held and is connected in analog May Day, and the other end is through common mode filtering capacity earth.
7. a kind of high-power IGBT temperature sampling protective circuit as described in claim 4 or 5, it is characterized in that: described difference isolating amplifier circuit includes optical isolation amplifier, the in-phase input end of the temperature sampling signal access optical isolation amplifier that said temperature amplifier circuit exports, the inverting input access of optical isolation amplifier in analog, the difference output both positive and negative polarity of described optical isolation amplifier is connected to amplifier three in-phase input end and inverting input respectively after resistance, access in analog after electric capacity through being arranged in parallel of the in-phase input end of above-mentioned amplifier three and resistance, the output of amplifier three is accessed after electric capacity through being arranged in parallel of the inverting input of above-mentioned amplifier three and resistance, the output output temperature sampled signal of described amplifier three inputs AD sampling module after voltage follower.
8. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 7, it is characterized in that: the model of above-mentioned optical isolation amplifier is HCPL-7800, the model of above-mentioned amplifier three is MC34071.
9. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 7; it is characterized in that: described temperature protection latch cicuit includes comparator and trigger; the in-phase input end of said temperature sampled signal input comparator; the inverting input of the benchmark protection voltage input comparator of temperature protection a reference source; the output of described comparator is provided with a pull-up resistor, and this output is connected to the control end of trigger.
10. a kind of high-power IGBT temperature sampling protective circuit as claimed in claim 9, it is characterized in that: the model of described amplifier one, amplifier two and amplifier four is LM358, the model of comparator is LM211, and the model of trigger is CD4013.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410436048.7A CN104242254B (en) | 2014-09-01 | 2014-09-01 | A kind of high-power IGBT temperature sampling protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410436048.7A CN104242254B (en) | 2014-09-01 | 2014-09-01 | A kind of high-power IGBT temperature sampling protection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104242254A true CN104242254A (en) | 2014-12-24 |
| CN104242254B CN104242254B (en) | 2017-11-03 |
Family
ID=52229847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410436048.7A Active CN104242254B (en) | 2014-09-01 | 2014-09-01 | A kind of high-power IGBT temperature sampling protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104242254B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105444915A (en) * | 2015-11-13 | 2016-03-30 | 苏州扬佛自动化设备有限公司 | High-voltage switchgear monitoring control circuit |
| CN105628246A (en) * | 2015-12-20 | 2016-06-01 | 常州瑞华电力电子器件有限公司 | Power semiconductor module temperature monitoring system |
| CN106768460A (en) * | 2016-12-02 | 2017-05-31 | 杭州创睿新能源科技有限公司 | A kind of charging pile pipette tips temperature collection circuit and method |
| CN108254089A (en) * | 2018-03-22 | 2018-07-06 | 深圳市英威腾电动汽车驱动技术有限公司 | A kind of temperature sampling circuit and controller |
| CN111416329A (en) * | 2020-03-31 | 2020-07-14 | 上海空间电源研究所 | Shunt switch tube overheat protection circuit for aerospace power supply |
| CN112600164A (en) * | 2020-12-21 | 2021-04-02 | 芜湖大洋电驱动有限公司 | Temperature acquisition and over-temperature protection circuit for driving motor of electric automobile and motor |
| CN113049108A (en) * | 2021-03-03 | 2021-06-29 | 河南新正方彩印有限公司 | Environment-friendly UV printing treatment control system |
| CN113091929A (en) * | 2019-12-23 | 2021-07-09 | 比亚迪股份有限公司 | Motor temperature sampling circuit and fault detection method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1445555A (en) * | 2003-01-15 | 2003-10-01 | 惠州市蓝微电子有限公司 | Circuit for testing negative temperature coefficient thermistor |
| CN1783635A (en) * | 2004-12-01 | 2006-06-07 | 美国凹凸微系有限公司 | Low noise charging method and system for portable devices |
| CN2836027Y (en) * | 2005-08-18 | 2006-11-08 | 方大集团股份有限公司 | Motor winding current detecting circuit for shielded door |
| CN201893980U (en) * | 2010-12-16 | 2011-07-06 | 杭州奥能照明电器有限公司 | Multipath dimming light-emitting diode drive power supply |
| CN102195541A (en) * | 2011-05-21 | 2011-09-21 | 重庆长安汽车股份有限公司 | PMSM (permanent magnet synchronous motor) for electrical vehicle and temperature detection circuit of controller system |
| CN102437555A (en) * | 2011-12-15 | 2012-05-02 | 南京亚派科技实业有限公司 | Over-temperature protection circuit for insulated gate bipolar transistor (IGBT) |
| CN103337836A (en) * | 2013-07-24 | 2013-10-02 | 国家电网公司 | High-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit |
| CN204144923U (en) * | 2014-09-01 | 2015-02-04 | 江苏方程电力科技有限公司 | A kind of high-power IGBT temperature sampling protective circuit |
-
2014
- 2014-09-01 CN CN201410436048.7A patent/CN104242254B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1445555A (en) * | 2003-01-15 | 2003-10-01 | 惠州市蓝微电子有限公司 | Circuit for testing negative temperature coefficient thermistor |
| CN1783635A (en) * | 2004-12-01 | 2006-06-07 | 美国凹凸微系有限公司 | Low noise charging method and system for portable devices |
| CN2836027Y (en) * | 2005-08-18 | 2006-11-08 | 方大集团股份有限公司 | Motor winding current detecting circuit for shielded door |
| CN201893980U (en) * | 2010-12-16 | 2011-07-06 | 杭州奥能照明电器有限公司 | Multipath dimming light-emitting diode drive power supply |
| CN102195541A (en) * | 2011-05-21 | 2011-09-21 | 重庆长安汽车股份有限公司 | PMSM (permanent magnet synchronous motor) for electrical vehicle and temperature detection circuit of controller system |
| CN102437555A (en) * | 2011-12-15 | 2012-05-02 | 南京亚派科技实业有限公司 | Over-temperature protection circuit for insulated gate bipolar transistor (IGBT) |
| CN103337836A (en) * | 2013-07-24 | 2013-10-02 | 国家电网公司 | High-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit |
| CN204144923U (en) * | 2014-09-01 | 2015-02-04 | 江苏方程电力科技有限公司 | A kind of high-power IGBT temperature sampling protective circuit |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105444915A (en) * | 2015-11-13 | 2016-03-30 | 苏州扬佛自动化设备有限公司 | High-voltage switchgear monitoring control circuit |
| CN105628246A (en) * | 2015-12-20 | 2016-06-01 | 常州瑞华电力电子器件有限公司 | Power semiconductor module temperature monitoring system |
| CN106768460A (en) * | 2016-12-02 | 2017-05-31 | 杭州创睿新能源科技有限公司 | A kind of charging pile pipette tips temperature collection circuit and method |
| CN108254089A (en) * | 2018-03-22 | 2018-07-06 | 深圳市英威腾电动汽车驱动技术有限公司 | A kind of temperature sampling circuit and controller |
| CN113091929A (en) * | 2019-12-23 | 2021-07-09 | 比亚迪股份有限公司 | Motor temperature sampling circuit and fault detection method thereof |
| CN113091929B (en) * | 2019-12-23 | 2023-04-07 | 比亚迪股份有限公司 | Motor temperature sampling circuit and fault detection method thereof |
| CN111416329A (en) * | 2020-03-31 | 2020-07-14 | 上海空间电源研究所 | Shunt switch tube overheat protection circuit for aerospace power supply |
| CN112600164A (en) * | 2020-12-21 | 2021-04-02 | 芜湖大洋电驱动有限公司 | Temperature acquisition and over-temperature protection circuit for driving motor of electric automobile and motor |
| CN113049108A (en) * | 2021-03-03 | 2021-06-29 | 河南新正方彩印有限公司 | Environment-friendly UV printing treatment control system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104242254B (en) | 2017-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104242254A (en) | High-power IGBT temperature sampling protective circuit | |
| CN204144923U (en) | A kind of high-power IGBT temperature sampling protective circuit | |
| CN105848451B (en) | A kind of heat dissipation temperature control system of automation equipment switch board | |
| CN102692883A (en) | An analog input circuit for engineering-machinery-dedicated controller | |
| CN102735362B (en) | Astronautic programmable thermocouple temperature transmitter | |
| CN203981571U (en) | A kind of infrared gas sensor signal processing circuit | |
| CN203177993U (en) | Temperature measuring circuit | |
| CN103248034B (en) | Can the USB flash disk of lightning protection | |
| CN203595907U (en) | Anti-interference type input circuit of pulse interval measurement system | |
| CN108304023B (en) | High-load stability compensation circuit of switching power supply | |
| CN103528716A (en) | High-precision temperature monitoring circuit | |
| CN203893865U (en) | Multi-type signal configuration circuit used for agricultural analog input acquisition module | |
| CN104483033A (en) | CMOS (complementary metal-oxide-semiconductor transistor) temperature sensor circuit with wide temperature range | |
| CN204374227U (en) | For the signal acquisition circuit of motor speed test | |
| CN204188299U (en) | Multichannel IGBT inner NTC high temperature real-time detection circuit | |
| CN203551125U (en) | Over-temperature alarm circuit | |
| CN106706993B (en) | Optocoupler current detection circuit | |
| CN205121401U (en) | Electric current source suitable for big current power device testing arrangement | |
| CN205120881U (en) | From compound earth -leakage protector leakage detection circuit | |
| CN203434951U (en) | Wide voltage pulse reception isolated circuit | |
| CN204115866U (en) | Power-measuring circuit | |
| CN203434609U (en) | Current protection circuit of servo driver | |
| CN106357264A (en) | Small signal amplifying measurement circuit | |
| CN103698588A (en) | Zero-crossing detection circuit structure | |
| CN204028203U (en) | A kind of anode current sampling circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Jianxing Inventor after: Huang Jie Inventor before: Zhang Jianxing Inventor before: Hu Qiuli Inventor before: Huang Jie |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |