CN104241433A - Schottky type far infrared multi-spectrum signal detector based on metamaterial and manufacturing method thereof - Google Patents
Schottky type far infrared multi-spectrum signal detector based on metamaterial and manufacturing method thereof Download PDFInfo
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- CN104241433A CN104241433A CN201410455227.5A CN201410455227A CN104241433A CN 104241433 A CN104241433 A CN 104241433A CN 201410455227 A CN201410455227 A CN 201410455227A CN 104241433 A CN104241433 A CN 104241433A
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- 238000001228 spectrum Methods 0.000 title abstract description 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002086 nanomaterial Substances 0.000 claims abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000004044 response Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000012271 agricultural production Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012358 sourcing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a Schottky type far infrared multi-spectrum signal detector based on a metamaterial. The Schottky type far infrared multi-spectrum signal detector comprises a substrate layer, an N-type gallium arsenide layer, a silicon dioxide layer, a metamaterial layer, an ohmic electrode and a Schottky electrode which are sequentially arranged from bottom to top, wherein the metamaterial layer is a metal open loop resonance unit array with a periodic micro-nano structure, the metal open loop resonance unit array comprises multiple graphs and characteristic size parameters of the graphs, each graph has a characteristic of complete absorption on specific electromagnetic waves, corresponding electromagnetic wave absorption frequency bands can be regulated and controlled by changing the structure and the size parameters of a metal open loop resonance unit, and the electromagnetic wave absorption strength of the metal open loop resonance unit array in the metamaterial layer can be regulated and controlled by changing the depletion layer width of the N-type gallium arsenide layer. The Schottky type far infrared multi-spectrum signal detector has a multi-spectrum characteristic, high sensitivity and a high-speed characteristic, and the detector can work within multiple far infrared wave bands by selecting different metal open loop resonance unit structures and performing monolithic integration.
Description
Technical field
The invention belongs to acquisition of signal technical field, more specifically, relate to a kind of Schottky type far infrared multispectrum signal detector based on Meta Materials and preparation method.
Background technology
Far infrared detection has in various fields such as airport security system, material tests, spacing wave detection, space flight and aviation and industrial and agricultural productions to be applied widely.Common far infrared deterctor mainly comprises hygrosensor, Bolometer, and the semiconductor detector be made up of silicon or GaAs.This few class detector principle is ripe, practical.
But, requiring at a high speed and high sensitivity signal detection occasion under, there is following problem in existing far infrared deterctor: what 1, the spectrum imaging device of far infrared deterctor still needed to configure complex precise raises clothes, driving or sweep mechanism, volume and quality large; 2, far infrared deterctor response speed is slower; 3, far infrared deterctor spectrographic detection wavelength can not be changed.
Summary of the invention
For above defect or the Improvement requirement of prior art, the invention provides a kind of Schottky type far infrared multispectrum signal detector based on Meta Materials and preparation method, its object is to, solve the technical problem that the volume existed in existing far infrared signal sensor is large, low-response, spectrographic detection wavelength can not be changed.
For achieving the above object, according to one aspect of the present invention, provide a kind of Schottky type far infrared multispectrum signal detector based on Meta Materials, comprise the substrate layer set gradually from bottom to top, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode, with a pair Schottky electrode, metamaterial layer and n type gaas layer form Schottky contacts, metamaterial layer comprises multiple metal open loop resonating member array that can arrange in any way, and for having the metal level of periodically micro nano structure, the metal open loop resonating member perforate spacing t=80 ~ 200nm of metal open loop resonating member array, live width d=200 ~ 600nm, period L=500 ~ 2000nm.
Preferably, the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
Preferably, the material of substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Preferably, the material of Ohmic electrode is nickel, germanium, Yi Jijin, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
Preferably, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
Preferably, when metamaterial layer is used for electromagnetic signal detection, the cycle of its periodicity micro nano structure should much smaller than the wavelength of electromagnetic signal.
Preferably, the making material of metal open loop resonating member array is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
According to another aspect of the present invention, provide a kind of preparation method of the Schottky type far infrared multispectrum signal detector based on Meta Materials, comprise the following steps:
(1) on substrate layer, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer thus;
(2) on n type gaas layer, plasma enhanced CVD legal system prepared silicon dioxide layer is passed through;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Ge/Au layer be stacked successively, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer, to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode;
(4) on silicon dioxide layer by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer and the Schottky electrode with Ni/Au layer respectively, metamaterial layer directly contacts with n type gaas layer, Schottky electrode is arranged on silicon dioxide layer, and the distance between Schottky electrode and metamaterial layer is 1mm ~ 1.5mm.
In general, the above technical scheme conceived by the present invention compared with prior art, can obtain following beneficial effect:
1, the Schottky type far infrared multispectrum signal detector volume that the present invention is based on Meta Materials is little: the making due to described Meta Materials adopts micro-nano photoetching process, can integrated thousands of metal open loop resonating member in 1mm2 size, the metal open loop resonating member array formed by multiple figure integrates, also only need the space of 1 ~ 2cm2, the Schottky type far infrared multispectrum signal detector volume therefore based on Meta Materials is very little, very light in weight;
2, the present invention is based on the Schottky type far infrared multispectrum signal explorer response speed of Meta Materials: because the metal open loop resonating member of metamaterial layer has the ability absorbing corresponding wave band electromagnetic signal completely, resonate once produce with corresponding far infrared wave segment signal, its resonance response speed belongs to ultrahigh speed response, can produce response signal in very short time.
3, the Schottky type far infrared multispectrum signal detector that the present invention is based on Meta Materials only needs a small amount of e-sourcings such as AC signal generator to assist it to carry out work, thus saves peripheral circuit resource.
4, because metamaterial layer can increase arbitrarily new metal open loop resonating member array, therefore the invention provides a kind of can the ability of spread signal investigative range according to actual needs.
Accompanying drawing explanation
Fig. 1 is the longitudinal profile schematic diagram of an alternative of detector in the present invention.
Fig. 2 is the schematic top plan view of an alternative of detector in the present invention.
Fig. 3 is the schematic diagram of metamaterial layer of the present invention.
Fig. 4 is the structural representation of metal open loop resonating member array in metamaterial layer of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
One aspect of the present invention is to provide a kind of Schottky type far infrared multispectrum signal detector based on Meta Materials, as shown in Figure 1, the substrate layer 1, n type gaas layer 2, silicon dioxide layer 3, metamaterial layer 4, Ohmic electrode 5 and a pair Schottky electrode 61 and 62 that set gradually is comprised from bottom to top.Wherein, n type gaas layer 2 is arranged at above substrate layer 1, silicon dioxide layer 3 is arranged at above n type gaas layer 2, metamaterial layer 4 is arranged at above n type gaas layer 2, Ohmic electrode 5 is arranged at above n type gaas layer 2, Schottky electrode 61 and 62 is arranged at above silicon dioxide layer 3, and Ohmic electrode 5 and a pair Schottky electrode 61 and 62 are arranged at the two ends, left and right of metamaterial layer 4 respectively.
Metamaterial layer 4 is for having the metal level of periodically micro nano structure, and the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
The substrate of Schottky diode can be selected but be not limited to semi-insulating GaAs, can also be silicon, alundum (Al2O3) etc.
The Ohmic electrode 5 of Schottky diode can be selected but be not limited to nickel, germanium, gold, and its thickness is preferably 20-30nm, 200-300nm and 20-30nm; Schottky electrode 61 and 62 can be selected but be not limited to titanium, gold, and its thickness is preferably 20-30nm and 200-250nm.
Metamaterial layer 4 is made up of periodicity micro-nano metal structure, and itself and n type gaas layer 2 form Schottky contacts, has the complete absorbent properties to specific electromagnetic wave, can be optimized by the size of adjustment cycle micro-nano metal structure to its service band.
When metamaterial layer 4 detects for electromagnetic signal, the cycle of the periodicity micro nano structure that metamaterial layer 4 adopts much smaller than the wavelength of respective signal, thus should meet the real work performance of sub-wavelength device.
As shown in Figures 2 and 3, metamaterial layer 4 comprises multiple metal open loop resonating member array 41,42,43,44,45 and 46 and (should be appreciated that illustrated quantity should not be understood to limit the quantity of this array, the quantity of this array be more than or equal to 2 integer), wherein the resonance frequency of metal open loop resonating member array 41 ~ 46 corresponds respectively to a specific far infrared wavelength.In order to clearly show the metamaterial structure and the characteristic size parameter that work in far infrared band, the metal open loop resonating member array 41 in metamaterial layer 4 amplifies by the present embodiment, as shown in Figure 4.It is titanium, gold that the metal open loop resonating member of metal open loop resonating member array 41 makes material, thickness is respectively 20 ~ 30nm and 200 ~ 250nm, Schottky contacts is formed with n type gaas layer 2, when working in far infrared band, perforate spacing t=80 ~ 200nm, live width d=200 ~ 600nm, period L=500 ~ 2000nm, intermediate connection inclination angle theta=0 ~ 90 degree, intermediate connection length p=300 ~ 2000nm, intermediate connection width f≤d/4.
The above-mentioned metal open loop resonating member array be made up of different graphic is equivalent to multiple LC resonant circuit, after target electromagnetic ripple signal 7 impinges perpendicularly on metamaterial layer 4, electromagnetic wave with specific wavelength in far infrared band produces and resonates by these LC resonant circuits, absorb the energy of respective wavelength in incident electromagnetic wave 7, and then make metal open loop resonating member heating up, because metal open loop resonating member intermediate connections region is not only thin but also long, surface current during resonance through this region because the unexpected change of resistance must cause greatly temperature to raise rapidly, thus change rapidly the resistivity of metal open loop resonating member metal, by applying 2V alternating voltage on a pair Schottky electrode 61 and 62, when alternating voltage peak-to-peak value amplitude of variation exceedes setting threshold, show that this metal open loop resonating member has detected the signal of corresponding wavelength, when exceeding setting threshold if any multiple alternating voltage peak-to-peak value amplitude of variation, show have multiple metal open loop resonating member to detect the signal of corresponding wavelength, by applying on 0 ~ 5V reverse direct current (DC) bias Xiao Yu Ohmic electrode 5, the depletion width of the metal of metamaterial layer 4 and n type gaas layer 2 contact area is increased, improve the absorption efficiency of metamaterial layer 4 pairs of incident electromagnetic waves 7, and increase the resistivity of metal open loop resonating member further, thus the alternating voltage peak-to-peak value making Schottky electrode 61 and 62 detect is more obvious, realizes the detection of far infrared multispectrum signal.
The preparation method that the present invention is based on the Schottky type far infrared multispectrum signal detector of Meta Materials comprises the steps:
(1) on substrate layer 1, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer 2 thus, its thickness is 1um ~ 2um;
(2) on n type gaas layer 2, pass through plasma enhanced CVD legal system prepared silicon dioxide layer 3, its thickness is 300nm ~ 400nm;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm), to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode 5,
(4) on silicon dioxide layer 3 by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer 3, by negative adhesive process photoetching Schottky electrode, the Ni/Au layer (its thickness is respectively 200-250nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Au layer is peeled off, thus form metamaterial layer 4 and the Schottky electrode 6 with Ni/Au layer (its thickness is respectively 200nm/20nm) respectively, metamaterial layer 4 directly contacts with n type gaas layer 2, Schottky electrode 6 is arranged on silicon dioxide layer 3, and the distance between Schottky electrode 61 and 62 and metamaterial layer 4 is 1mm ~ 1.5mm.
Therefore, present invention employs Schottky diode structure, it is using the metal open loop resonating member array of metamaterial layer as complete light absorbing medium, causes the change of AC signal peak-to-peak value to obtain ultra-wide spectral domain acquisition of signal ability by the change of resistivity; By the characteristic size parameter of optimal design metal open loop resonating member and shape, the extinction Meta Materials working in far infrared band can be obtained more simultaneously.Above-mentioned some metal open loop resonating member arrays are carried out packet numbering, correspond respectively to far infrared wavelength 1, far infrared wavelength 2, far infrared wavelength 3, far infrared wavelength N, wherein N is the quantity of metal open loop resonating member array, by above-mentioned preparation solution integration in the Schottky diode being substrate with monolithic GaAs, realize far infrared multispectrum signal detector.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the Schottky type far infrared multispectrum signal detector based on Meta Materials, comprise the substrate layer set gradually from bottom to top, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode, with a pair Schottky electrode, it is characterized in that, metamaterial layer and n type gaas layer form Schottky contacts, metamaterial layer comprises multiple metal open loop resonating member array that can arrange in any way, and for having the metal level of periodically micro nano structure, the metal open loop resonating member perforate spacing t=80 ~ 200nm of metal open loop resonating member array, live width d=200 ~ 600nm, period L=500 ~ 2000nm.
2. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, the metal level of described periodicity micro nano structure contains multiple figure and characteristic size parameter thereof, and it has complete absorption characteristic for specific electromagnetic wave.
3. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, the material of substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
4. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, the material of Ohmic electrode is nickel, germanium, Yi Jijin, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
5. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
6. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, when metamaterial layer is used for electromagnetic signal detection, the cycle of its periodicity micro nano structure should much smaller than the wavelength of electromagnetic signal.
7. Schottky type far infrared multispectrum signal detector according to claim 1, is characterized in that, the making material of metal open loop resonating member array is titanium and gold, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
8. according in claim 1 to 7 described in any one based on a preparation method for the Schottky type far infrared multispectrum signal detector of Meta Materials, it is characterized in that, comprise the following steps:
(1) on substrate layer, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer thus;
(2) on n type gaas layer, plasma enhanced CVD legal system prepared silicon dioxide layer is passed through;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Ge/Au layer be stacked successively, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer, to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode;
(4) on silicon dioxide layer by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer and the Schottky electrode with Ni/Au layer respectively, metamaterial layer directly contacts with n type gaas layer, Schottky electrode is arranged on silicon dioxide layer, and the distance between Schottky electrode and metamaterial layer is 1mm ~ 1.5mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
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| CN101702067A (en) * | 2009-10-29 | 2010-05-05 | 电子科技大学 | Terahertz plane adsorbing material |
| KR101139938B1 (en) * | 2010-10-18 | 2012-04-30 | 광주과학기술원 | Terahertz wave resonator and modulator utilizing metamaterial |
| CN103575403A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz focal plane array based on MEMS technology |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
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