CN104241428A - Two-dimensional silicon-based micro-nano photonic crystal solar cell - Google Patents
Two-dimensional silicon-based micro-nano photonic crystal solar cell Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 68
- 239000000377 silicon dioxide Substances 0.000 claims description 34
- 230000000694 effects Effects 0.000 claims description 22
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- 238000006243 chemical reaction Methods 0.000 claims description 21
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- 239000002800 charge carrier Substances 0.000 claims description 13
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- 230000000644 propagated effect Effects 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 3
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- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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Abstract
The invention belongs to the technical field of solar cells, and relates to a two-dimensional silicon-based micro-nano photonic crystal solar cell. The two-dimensional silicon-based micro-nano photonic crystal solar cell is characterized in that front electrodes which are periodically arrayed are arranged on the lower side surface of a front contact layer; a two-dimensional silicon-based micro-nano photonic crystal solar cell structure is arranged between the front electrodes and back electrodes, upper layers of the two-dimensional silicon-based micro-nano photonic crystal solar cell structure are type-n silicon semiconductor layers, a lower layer of the two-dimensional silicon-based micro-nano photonic crystal solar cell structure is a type-p silicon semiconductor layer, and PN junctions are formed by the type-n silicon semiconductor layers and the type-p silicon semiconductor layer; a back contact layer is arranged at the bottoms of the back electrodes, and the back contact layer and the front contact layer are made of identical materials; the back electrodes which are of aluminum thin layer structures are arranged in slow-light regions or band-gap regions of the type-p silicon semiconductor layer. The two-dimensional silicon-based micro-nano photonic crystal solar cell has the advantages that the two-dimensional silicon-based micro-nano photonic crystal solar cell is simple in structure, small in size, low in threshold, short in carrier diffusion distance and high in stability, light coupling efficiency and light transmission efficiency, is far thinner than the traditional silicon solar cell and becomes a new-generation low-cost and efficient solar cell device with the maximum potential, and mature processing and composite technologies are implemented.
Description
Technical field:
The invention belongs to technical field of solar batteries, relate to a kind of New-type photon crystal solar battery structure, particularly one has forbidden photon band and slow light effect, little, the sunken two dimension silica-based micro-nano photonic crystal solar cell that light is good, photoelectric conversion efficiency is high of thickness.
Background technology:
Solar cell is a kind of is the semiconductor device of electric energy by transform light energy, it is the important form of Solar use, divide according to basis material, solar cell can be divided into crystal silicon solar energy battery, selenium solar cell, compound solar cell, silicon-based film solar cells, organic thin film solar cell and fuel sensitization solar battery, widely used is at present silica-based solar cell, this is because silicon raw material enriches, photoelectric conversion efficiency is high, photoelectric properties stability and reliability high, technology is ripe, not containing toxic element, not to environment, the factors such as market acceptance level is high determine.The principal element affecting solar battery efficiency can be summed up as two aspects, and optical loss and electricity loss, wherein main factor is optical absorption, improve the conversion efficiency of solar cell, will improve the absorption of battery material to sunlight as far as possible.The essence of silica-based solar cell is exactly a large-scale PN junction, to general silicon materials (300K, E
g=1.12eV), its available solar spectrum is 300 ~ 1100nm, and the optical energy loss of silicon solar cell is not only that energy is less than the infrared photon that crystal silicon can be and can not be utilized, especially because photon energy not can be effectively used to opto-electronic conversion.In conventional solar cell, these two kinds of effects can cause battery close to 70% energy loss, people generally believe that the light conversion efficiency of solar cell is 31% to the maximum, so one of emphasis direction of silicon solar cell research improves photoelectric conversion efficiency, particularly material to effective absorption aspect of photon; Another emphasis direction of silicon solar cell research reduces costs.The silicon solar cell substrate thickness at initial stage is thicker, and the thickness of present silicon substrate can be reduced to 150 ~ 200 μm from 350 ~ 400 μm, and the experiment of BT company of Britain proves: when monocrystaline silicon solar cell reduces to 175 μm, the efficiency of battery does not have supplementary loss.75 μm of thick solar cells that Fraunhofer company of Germany makes, efficiency still can reach 23.1%.And have research to point out, as long as thickness is greater than 50 μm of silicon solar cells with light trapping structure just have good conversion efficiency.Visible, if adopt suitable structure, while the thickness reducing material, the photoelectric conversion efficiency not reducing silicon solar cell can be ensured.But when traditional solar cell thickness reduces, the loss of transmitted light increases with the minimizing of thickness, and theory calculate shows, when material is as thin as 50 μm, thinning due to cell thickness, structure is received the absorption efficiency of longer-wave photons and is lowered.Only has employing light trapping structure, the photoelectric conversion efficiency of guarantee battery.Except battery enters the anti-reflection of light face and front electrode as far as possible less except area coverage, existing sunken light mode is mainly injected after in cell body at light, increase light in the path of absorbed layer, the refractive index of absorbed layer is made to be greater than its levels textured material, make do not have the light absorbed again to return battery obsorbing layer, carry out double absorption, be divided into three kinds of modes:
(1) 1/4 wavelength antireflective film of single or multiple lift is according to film destructive interference principle, and reduce the reflectivity of specific wavelength, although this kind of antireflective film cost of manufacture is low, its reflected waveband is narrower, and reflectivity increases along with light wave incidence angle and significantly increases;
(2) graded index antireflective film, deposit at silicon face the antireflective film that one deck refractive index gradually changes, it can realize very low reflectivity in wide spectrum, wide ranges of incidence angles, but this type of antireflective film preparation cost is high, and the material meeting index requirements is difficult to find;
(3) matte antireflective film, that antireflective film technology and surface wool manufacturing technology are combined, prepare the antireflective film with suede structure, to realize the effect of 1/4 wavelength antireflective film, change reduction reflectivity increase with incidence angle and increase simultaneously, but this kind of antireflective film need physics, chemistry even microelectronics processes combine, the more difficult control of preparation technology, so most research is under test.
Recently, researching and proposing silicon nanowires (or silicon hole) may the most potential, one of low cost, high performance solar batteries device material, silicon nanowires can increase light absorption, and there is charge carrier only need spread very short distance and just can reach the advantages such as interface, but existing research mostly is the nano solar battery structure of one-dimentional structure, the mechanism adopted also is fall into light by diffuse reflection, some has researched and proposed radial silicon nanowires two-dimensional structure, but complex manufacturing technology, does not have to combine with the forbidden band of photon crystal structure and slower rays theory yet.Therefore, seek a kind of New-type photon crystal solar battery structure, make it have forbidden photon band and slow light effect, thickness is little, and sunken light is good, and photoelectric conversion efficiency is high.
Summary of the invention:
The object of the invention is to the shortcoming overcoming prior art existence, design a kind of thickness little, fall into light good, conversion efficiency is high, Stability Analysis of Structures, be convenient to the New Two Dimensional silica-based micro-nano photonic crystal solar cell of processing and large-scale production, by the forbidden band characteristic of photonic crystal, the features such as slower rays characteristic are combined with the Dominant Facies of silicon nanostructure, adopt circular segment or oval scattering unit, pass through analog computation, design solar battery structure, the propagation path of restriction light and circulation way, and by front contact layer to incident light anti-reflection, the silica-based micro-nano photonic crystal solar battery structure of two dimension effectively falls into light and opto-electronic conversion, front electrode and back electrode are prepared for building circuit, back contact increases anti-several aspect to incident light and organically combines, reach the object improving battery efficiency.
To achieve these goals, agent structure of the present invention comprises front contact layer, front electrode, two-dimentional silica-based micro-nano photonic crystal solar battery structure, back electrode and back contact; The downside that front contact layer made by transparent conductive oxide TCO material is provided with the front electrode of periodic arrangement; Two-dimentional silica-based micro-nano photonic crystal solar battery structure is provided with between front electrode and back electrode, the upper strata of the silica-based micro-nano photonic crystal solar battery structure of two dimension is N-shaped silicon semiconductor layer, lower floor is p-type silicon semiconductor layer, and N-shaped silicon semiconductor layer and p-type silicon semiconductor layer form PN junction; The bottom of back electrode is provided with back contact, and the material of back contact is identical with the material of front contact layer; The back electrode of aluminium laminate structure is arranged on slower rays region or the region, forbidden band of p-type silicon semiconductor layer, back electrode or be single thin layer, and the shape of back electrode is identical with the shape of front electrode, is strip; Incident light is radiated on two-dimentional silica-based micro-nano photonic crystal solar battery structure by front contact layer, due to forbidden band and slow light effect, the silica-based micro-nano photonic crystal solar battery structure of two dimension has good light trapping effect, effectively carry out opto-electronic conversion, inspire charge carrier, and slow light effect ensures directivity and the stability of carrier flow; Front electrode and back electrode are that the charge carrier forming circuit of photovoltaic effect is prepared, and back contact increases anti-to incident light, improve battery efficiency.
N-shaped Si semiconductor of the present invention is with the silica-based nano-photon crystal medium post with forbidden band and slow light effect of two dimension or airport structure, comprises scattering unit of forbidden band district, forbidden band district scattering unit gap, slower rays district scattering unit and slower rays district scattering unit gap; Scattering unit of forbidden band district gap is formed between adjacent scattering unit of forbidden band district; Scattering unit of slower rays district gap is formed between adjacent scattering unit of slower rays district; Scattering unit is circular segment or ellipse; The space arrangement of N-shaped Si semiconductor is triangular crystal lattice or tetragonal lattice structure; Represent circular segment or oval scattering unit's major axis and the radius of minor axis respectively if the lattice constant of N-shaped Si semiconductor is a, parameter b and c, defined parameters e=1-c/b, e=0-1, parameter a, e change according to the requirement of forbidden band and slower rays; Forbidden band district is made up of scattering units of forbidden band district more than 7 row and forbidden band district scattering unit gap, so that incident light or its component can not be propagated to vertical direction, has good light trapping effect; There is multiple change in slower rays scattering unit and the slower rays district scattering unit gap in slower rays district, to realize the microcavity parameter of high quality factor and to obtain higher group index; Forbidden band district is identical with slower rays plot structure height, and its thickness is greater than 50 μm, and forbidden band district and slower rays district are periodically alternately arranged; P-type Si semiconductor is the single semiconductor structure that thickness is greater than 50 μm, and p-type Si semiconductor can form plane with back electrode.
The micro-nano photonic crystal dielectric posts that the present invention relates to or airport structure be below two kinds respectively with the silica-based periodic arrangement with forbidden band and slow light effect minor structure of two dimension: a kind of is the above two-dimentional silicon based photon crystal forbidden band structures of seven rows of circular or oval scattering unit composition, to guarantee forbidden band effect, be scattering unit gap between scattering unit; Nano-photon crystal medium post or airport have larger specific area, can increase the absorbability to incident light; Its scattering is first and lattice constant is adjustable, so that the forbidden photon band of dielectric posts (or airport) comprises the region of 300 ~ 1100nm; When light, the existence in forbidden band makes structure not allow light being parallel to dielectric posts or air) direction propagation, be conducive to material to the absorption of photon and utilization; Another kind be a kind of by identical scattering unit, arrange the slow coupled waveguide that different microcavitys forms, the multiple high quality factor microcavitys formed by scattering unit disappearance and the deflection of scattering unit; By parameter adjustment, single cavity quality factor q value reaches 10
4more than level; Multiple microcavity forms slower rays Coupled Passive Waveguide Structure, and the group index of coupled waveguide reaches 10
4, its slower rays speed, well below the light velocity (being only 1/10000 or lower of the light velocity), makes interior photon be exceeded the doubly a lot of of rough stock by the efficiency that material absorbs; Wherein Q value is that the energy real-time distribution in microcavity sent according to signal generator draws, the decay formula of microcavity isolated mode is:
U(t)＝U
0exp(-αt) (1)
Wherein U
0for primary power in chamber, U (t) represents with after attenuation factor decay, the energy corresponding to t microcavity.Pattern centered by a resonance frequency f, the quality factor q that microcavity is corresponding can be expressed as (2):
Q＝2πf/α (2)
And group velocity v
gwith group index n
grelation can be represented by formula (3), and c is the light velocity:
As can be seen here, because structure is the periodic arrangement of two kernel textures above, fall in light and light absorption in increase and have a lot of advantage: dielectric posts or airport structure have larger specific area; Forbidden band structure has sunken luminous effect, and incident light is absorbed gradually through multiple reflections back and forth in silicon linear array; In slower rays structure, the group velocity of light is very little, is convenient to photon and is absorbed by material, thus produces more charge carrier, and slow light effect also assures that directivity and the stability of carrier flow; The size of structure adjusts according to absorbing wavelength, to complete high efficiency optical absorption; The dielectric posts degree of depth that is high or hole is larger, and cell reflective rate is lower, in the constant situation of other conditions, due to light trapping effect, when the degree of depth of structure reaches 50 μm, battery at the reflectivity of 400 ~ 1000nm on average lower than 10%.
Rice photonic crystal dielectric posts of the present invention or airport structure all follow p-type Si semiconductor to form shallow PN junction, the very short distance of photo-generated carrier diffusion just reaches interface, thus have higher carrier collection rate, two kinds of structural cycle shape arrangements, the comparable conventional batteries in region, forbidden band improves photoelectric conversion efficiency close to 50%, and the photoelectric conversion efficiency in slower rays region reaches the twice of conventional batteries, its Joint effect greatly increases the photoelectric conversion efficiency of structure, and the theoretical value of its photoelectric efficiency can reach more than 60%; Due to electric property and the silicon substrate material of this structure, do not need doping further to wait process, there is good electricity transmission performance.
Forbidden photon band and slower rays principle compared with prior art, are applied to solar photovoltaic conversion by the present invention; Forbidden band structure has and well falls into luminous effect, and incident light is absorbed gradually through multiple reflections back and forth in silicon linear array, has good light trapping effect; It is good that slower rays structure falls into light, and due to the group velocity of light very little, be convenient to material absorb photons, produce more charge carrier, slow light effect ensures directivity and the stability of carrier flow; The structure of design is not only regular, and can be flexible and changeable: the silicon nano-pillar that scattering unit is relatively little, shows lower reflection and higher absorption at high-frequency region; The silicon nano-pillar that scattering unit is relatively large, then show lower reflection and higher absorption at low frequency region; The silicon nano hole showing similar regularity can also be taked, its structure is simple, thickness is far below the thickness of traditional silicon solar cell, volume is little, threshold value is low, and carrier diffusion is apart from short, and coupling and the efficiency of transmission of stability, light are high, processing and complex technique maturation, become that a new generation is the most potential, low cost, high performance solar batteries device.
Accompanying drawing illustrates:
Fig. 1 is agent structure principle schematic of the present invention.
Fig. 2 is the structural principle schematic diagram of the two dimension silica-based micro-nano photonic crystal solar battery structure that the present invention relates to, and wherein (1) is stereogram; (2) be vertical view.
Fig. 3 is the forbidden band figure in forbidden band district in the embodiment of the present invention 1, and wherein transverse axis is parameter e value, and the longitudinal axis is relative forbidden band value.
Fig. 4 is the quality factor q value curve of single microcavity in the embodiment of the present invention 1, and wherein transverse axis is parameter e value, and the longitudinal axis is Q value.
Fig. 5 is group index curve in the embodiment of the present invention 1, and wherein transverse axis is normalized frequency f, and the longitudinal axis is group index n
gvalue.
Fig. 6 is the structural principle schematic diagram of two-dimentional silica-based micro-nano photonic crystal solar battery structure in the embodiment of the present invention 2, and wherein (1) is stereogram; (2) be vertical view.
Fig. 7 is the forbidden band figure in forbidden band district in the embodiment of the present invention 2, and wherein transverse axis is parameter e value, and the longitudinal axis is relative forbidden band value.
Fig. 8 is the quality factor q value curve of single microcavity in the embodiment of the present invention 2, and wherein transverse axis is parameter e value, and the longitudinal axis is Q value.
Fig. 9 is group index curve in the embodiment of the present invention 2, and wherein transverse axis is normalized frequency f, and the longitudinal axis is group index n
gvalue.
Embodiment:
Also be described further by reference to the accompanying drawings below by embodiment.
The agent structure of the present embodiment comprises front contact layer 1, front electrode 2, two-dimentional silica-based micro-nano photonic crystal solar battery structure 3, back electrode 4 and back contact 5; The downside that front contact layer 1 made by transparent conductive oxide TCO material is provided with the front electrode 2 of periodic arrangement; Two-dimentional silica-based micro-nano photonic crystal solar battery structure 3 is provided with between front electrode 2 and back electrode 4, the upper strata of the silica-based micro-nano photonic crystal solar battery structure 3 of two dimension is N-shaped silicon semiconductor layer 6, lower floor is p-type silicon semiconductor layer 7, and N-shaped silicon semiconductor layer 6 and p-type silicon semiconductor layer 7 form PN junction; The bottom of back electrode 4 is provided with back contact 5, and the material of back contact 5 is identical with the material of front contact layer 1; The back electrode 4 of aluminium laminate structure is arranged on slower rays region or the region, forbidden band of p-type silicon semiconductor layer 7, back electrode 4 or be single thin layer, and the shape of back electrode 4 is identical with the shape of front electrode, is strip; Incident light is radiated on two-dimentional silica-based micro-nano photonic crystal solar battery structure 3 by front contact layer 1, due to forbidden band and slow light effect, the silica-based micro-nano photonic crystal solar battery structure 3 of two dimension has good light trapping effect, effectively carry out opto-electronic conversion, inspire charge carrier, and slow light effect ensures directivity and the stability of carrier flow; Front electrode 2 and back electrode 4 are that the charge carrier forming circuit of photovoltaic effect is prepared, and back contact 5 pairs of incident lights increase anti-, improve battery efficiency.
N-shaped Si semiconductor 6 described in the present embodiment is with the silica-based nano-photon crystal medium post with forbidden band and slow light effect of two dimension or airport structure, comprises scattering unit of forbidden band district 8, forbidden band district scattering unit gap 9, slower rays district scattering unit 10 and slower rays district scattering unit gap 11; Scattering unit of forbidden band district gap 9 is formed between adjacent scattering unit of forbidden band district 8; Scattering unit of slower rays district gap 11 is formed between adjacent scattering unit of slower rays district 10; Scattering unit is circular segment or ellipse; The space arrangement of N-shaped Si semiconductor 6 is triangular crystal lattice or tetragonal lattice structure; Represent circular segment or oval scattering unit's major axis and the radius of minor axis respectively if the lattice constant of N-shaped Si semiconductor 6 is a, parameter b and c, defined parameters e=1-c/b, e=0-1, parameter a, e change according to the requirement of forbidden band and slower rays; Forbidden band district is made up of scattering units of forbidden band district 7 more than 7 row and forbidden band district scattering unit gap 8, so that incident light or its component can not be propagated to vertical direction, has good light trapping effect; There is multiple change in slower rays scattering unit 9 and the slower rays district scattering unit gap 10 in slower rays district, to realize the microcavity parameter of high quality factor and to obtain higher group index; Forbidden band district is identical with slower rays plot structure height, and its thickness is greater than 50 μm, and forbidden band district and slower rays district are periodically alternately arranged; P-type Si semiconductor 7 is greater than the single semiconductor structure of 50 μm for thickness, and p-type Si semiconductor can form plane with back electrode 4.
Described in the present embodiment, two-dimentional silica-based micro-nano photonic crystal solar battery structure 3 adopts commercially available two-dimentional silicon chip, and its Micromachining Technology is ripe, and front and back electrode, front and back contact layer material also adopt conventional commercially available prod.
Embodiment 1:
The overall structure of the present embodiment as shown in Figure 1, the N-shaped Si semiconductor 6 related in the silica-based micro-nano photonic crystal solar battery structure 3 of two dimension is the structures with forbidden band and slow light effect two kernel texture periodic arrangement, the scattering unit of N-shaped Si semiconductor 6 adopts circular segment, and space arrangement is triangular crystal lattice structure; The centre wavelength in forbidden band is located at λ=700nm, can be in the hope of by plane wave expansion method: when the centre wavelength in forbidden band is located at 700nm, when the lattice constant of structure is a=0.4 λ=280nm, parameter b=0.4a, e=0.4, forbidden band and slower rays have good effect; Because the forbidden band of structure is close to 50% of centre wavelength, as shown in Figure 3, the forbidden band of this spline structure is at 350 ~ 1050nm, and this scope not only comprises the scope of visible ray, also comprises the region that sunlight light intensity is larger; In order to ensure the sunken light effect in forbidden band, forbidden band district is made up of, so that incident light or its component can not be propagated to the direction perpendicular to nano-pillar (or hole) scattering units of forbidden band district 8 more than 7 row and forbidden band district scattering unit gap 9; (2) slower rays district comprises scattering unit of slower rays district 10, slower rays district scattering unit gap 11, it is made up of three row scattering units, 1, another then 90 ° of deflections are removed in two scattering unit compartment of terrains that a middle row is adjacent, form microcavity, other 4 scattering units of microcavity surrounding also deflect successively, formed circular, to realize the microcavity parameter of high quality factor and to obtain higher group index.These two kinds of structure heights identical (thickness is greater than 50 μm), periodically be alternately arranged, lower floor's to be p-type Si semiconductor 7 be single semiconductor structure can (thickness be greater than 50 μm), and back electrode is bar shaped, answer, see Fig. 2 with front electrode pair.
The operation principle of the present embodiment is: incident light is by front contact layer 1, almost unreflectedly be radiated on two-dimentional silica-based micro-nano photonic crystal solar battery structure 3, due to forbidden band and slow light effect, this structure has good light trapping effect, effectively can carry out opto-electronic conversion, inspire charge carrier, and slow light effect also assures that directivity and the stability of carrier flow; Front electrode 2 and back electrode 4, then for the charge carrier forming circuit of photovoltaic effect is prepared, back contact 5 pairs of incident lights increase anti-, improve battery efficiency further; Front contact layer 1 and back contact 5 have the function of protection photonic crystal solar cell, the forbidden band figure in Tu3Shi forbidden band district, and as seen from Figure 3 near e=0.4, there is maximum in relative forbidden band, is 49.6%; The quality factor figure in Tu4Shi slower rays district, also has maximum near e=0.4, is 4.8 × 10
4; Fig. 5 is the group index figure in slower rays region, and when slower rays region does not have displacement, the maximum of group index reaches 1.6 × 10
4; If slower rays region entirety has feasible displacements, the numerical value of group index also can increase.
Embodiment 2:
The overall structure of the present embodiment is identical with Fig. 1.The two dimension that embodiment relates to silica-based micro-nano photonic crystal solar battery structure 3 N-shaped Si semiconductor 6 is at the middle and upper levels the structures with forbidden band and slow light effect two kernel texture periodic arrangement.Have larger forbidden band to meet structure, what scattering unit adopted is circular segment; The space arrangement of structure is triangular crystal lattice structure; The centre wavelength in forbidden band is located at λ=700nm, can be in the hope of by plane wave expansion method: when the centre wavelength in forbidden band is located at 700nm, when the lattice constant of structure is a=0.375 λ=262.5nm, parameter b=0.42a, e=0.3, forbidden band and slower rays also have good effect; Because the forbidden band of structure is close to 43% of centre wavelength, as shown in Figure 7, the forbidden band of structure is slightly narrow, 399 ~ 1; Between 001nm, this scope also includes the scope of visible ray, and includes the larger region of sunlight light intensity; In order to ensure the sunken light effect in forbidden band, forbidden band district is all made up of, so that incident light or its component can not be propagated to the direction perpendicular to nano-pillar (or hole) scattering units 8 more than 7 row and forbidden band district scattering unit gap 9; ; Slower rays district comprises scattering unit of slower rays district 10, slower rays district scattering unit gap 11, it is made up of three row scattering units, two scattering unit compartment of terrains that a middle row is adjacent remove 1, form microcavity, in order to realize the microcavity parameter of high quality factor and obtain higher group index, three row's scattering units in composition slower rays region, the rectangular area namely in Fig. 6 (2), entirety is displacement ds=0.18a to the right; These two kinds of structure heights identical (thickness is greater than 50 μm), periodically be alternately arranged, lower floor's to be p-type Si semiconductor 7 be single semiconductor structure can (thickness be greater than 50 μm), and back electrode is bar shaped, answers with front electrode pair.
The operation principle of the present embodiment is: incident light is by front contact layer 1, almost unreflectedly be radiated on two-dimentional silica-based micro-nano photonic crystal solar battery structure 3, due to forbidden band and slow light effect, this structure has good light trapping effect, effectively can carry out opto-electronic conversion, inspire charge carrier, and slow light effect ensures directivity and the stability of carrier flow; Front electrode 2 and back electrode 4, then for the charge carrier forming circuit of photovoltaic effect is prepared, back contact 5 pairs of incident lights increase anti-, improve battery efficiency further; Front contact layer 1 and back contact 5 have the function of protection photonic crystal solar cell; The forbidden band figure in Tu7Shi forbidden band district, can find out near e=0.375, there is maximum in relative forbidden band, is 43%; The quality factor figure in Tu8Shi slower rays district, it also has maximum near e=0.375, is 4.0 × 10
4; Fig. 9 is the group index figure in slower rays region, and when there is displacement ds=0.18a in slower rays region, the maximum of group index reaches 2.0 × 10
4.
Claims (2)
1. a two dimension silica-based micro-nano photonic crystal solar cell, is characterized in that agent structure comprises front contact layer, front electrode, two-dimentional silica-based micro-nano photonic crystal solar battery structure, back electrode and back contact; The downside that front contact layer made by transparent conductive oxide TCO material is provided with the front electrode of periodic arrangement; Two-dimentional silica-based micro-nano photonic crystal solar battery structure is provided with between front electrode and back electrode, the upper strata of the silica-based micro-nano photonic crystal solar battery structure of two dimension is N-shaped silicon semiconductor layer, lower floor is p-type silicon semiconductor layer, and N-shaped silicon semiconductor layer and p-type silicon semiconductor layer form PN junction; The bottom of back electrode is provided with back contact, and the material of back contact is identical with the material of front contact layer; The back electrode of aluminium laminate structure is arranged on slower rays region or the region, forbidden band of p-type silicon semiconductor layer, back electrode or be single thin layer, and the shape of back electrode is identical with the shape of front electrode, is strip; Incident light is radiated on two-dimentional silica-based micro-nano photonic crystal solar battery structure by front contact layer, due to forbidden band and slow light effect, the silica-based micro-nano photonic crystal solar battery structure of two dimension has good light trapping effect, effectively carry out opto-electronic conversion, inspire charge carrier, and slow light effect ensures directivity and the stability of carrier flow; Front electrode and back electrode are that the charge carrier forming circuit of photovoltaic effect is prepared, and back contact increases anti-to incident light, improve battery efficiency.
2. two-dimentional silica-based micro-nano photonic crystal solar cell according to claim 1, it is characterized in that described N-shaped Si semiconductor is with the silica-based nano-photon crystal medium post with forbidden band and slow light effect of two dimension or airport structure, comprise scattering unit of forbidden band district, forbidden band district scattering unit gap, slower rays district scattering unit and slower rays district scattering unit gap; Scattering unit of forbidden band district gap is formed between adjacent scattering unit of forbidden band district; Scattering unit of slower rays district gap is formed between adjacent scattering unit of slower rays district; Scattering unit is circular segment or ellipse; The space arrangement of N-shaped Si semiconductor is triangular crystal lattice or tetragonal lattice structure; Represent circular segment or oval scattering unit's major axis and the radius of minor axis respectively if the lattice constant of N-shaped Si semiconductor is a, parameter b and c, defined parameters e=1-c/b, e=0-1, parameter a, e change according to the requirement of forbidden band and slower rays; Forbidden band district is made up of scattering units of forbidden band district more than 7 row and forbidden band district scattering unit gap, so that incident light or its component can not be propagated to vertical direction, has good light trapping effect; There is multiple change in slower rays scattering unit and the slower rays district scattering unit gap in slower rays district, to realize the microcavity parameter of high quality factor and to obtain higher group index; Forbidden band district is identical with slower rays plot structure height, and its thickness is greater than 50 μm, and forbidden band district and slower rays district are periodically alternately arranged; P-type Si semiconductor is the single semiconductor structure that thickness is greater than 50 μm, and p-type Si semiconductor can form plane with back electrode.
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| CN104867991A (en) * | 2015-04-22 | 2015-08-26 | 青岛大学 | Two-dimensional silicon-based photonic crystal solar battery |
| CN107516690A (en) * | 2017-09-25 | 2017-12-26 | 青岛大学 | A kind of three-dimensional silicon substrate micro-nano photonic crystal solar cell |
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| CN103219411A (en) * | 2013-04-09 | 2013-07-24 | 中国科学院半导体研究所 | Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method |
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