CN104230182A - Preparation method of high-transmittance tempered low-emissivity coated glass - Google Patents
Preparation method of high-transmittance tempered low-emissivity coated glass Download PDFInfo
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- CN104230182A CN104230182A CN201410510006.3A CN201410510006A CN104230182A CN 104230182 A CN104230182 A CN 104230182A CN 201410510006 A CN201410510006 A CN 201410510006A CN 104230182 A CN104230182 A CN 104230182A
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- 239000011521 glass Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 238000002834 transmittance Methods 0.000 title abstract 3
- 239000010410 layer Substances 0.000 claims abstract description 79
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 19
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002346 layers by function Substances 0.000 claims abstract description 12
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 48
- 239000007789 gas Substances 0.000 claims description 33
- 229910052786 argon Inorganic materials 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 17
- 230000035699 permeability Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910000551 Silumin Inorganic materials 0.000 claims description 4
- 229910001120 nichrome Inorganic materials 0.000 claims description 4
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 claims description 2
- 239000010946 fine silver Substances 0.000 claims description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000005329 float glass Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000005496 tempering Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation method of high-transmittance tempered low-emissivity coated glass. The preparation method comprises the following steps: setting a glass base plate and plating a titanium oxide dielectric layer, a silicon nitride dielectric layer, a zinc oxide dielectric layer, a nickel-chromium metal alloy layer, a silver functional layer, a nickel-chromium metal alloy layer, a zinc tin oxide dielectric layer and a silicon nitride dielectric layer on the glass base plate in sequence. The preparation method has the benefit that a multilayer film structure is prepared on the surface of a float glass base material through the offline magnetron sputtering technology, so that the glass has relatively high transmittance and selective coefficient and has high reflection for the infrared areas and the emissivity of the glass can be effectively reduced.
Description
Technical field
The present invention relates to glass coating technical field, particularly relate to a kind of preparation method of high permeability radiation coated glass capable of being toughened.
Background technology
At present, low radiation coated glass is widely used in building field, and it has the features such as the low and reflected infrared of heat transfer coefficient.The raising of transmitance, the anti-reflection effect of general employing dielectric layer and the reduction of metal layer thickness realize, but the oxidation of functional layer, affects the optical property of coated glass, thus have impact on the deep shaping property of coated glass when the too low meeting of metal layer thickness causes tempering.
Summary of the invention
The present invention is intended to solve coated glass transmitance and coated glass deep processing Problems existing.
In order to reach above-mentioned purpose, the invention provides a kind of high permeability radiation coated glass capable of being toughened preparation method, one glass substrate is set, described glass substrate is coated with one deck titanium oxide dielectric layer successively, one deck silicon nitride dielectric layer, one deck zinc oxide dielectric layer, one deck nickel chromium triangle metal alloy layer, one deck silver functional layer, one deck nickel chromium triangle metal alloy layer, one deck zinc-tin oxide dielectric layer and one deck silicon nitride dielectric layer.
In some embodiments, described titanium oxide dielectric layer adopts titanium oxide target to be coated with, and deposit thickness is between 5 ~ 15nm, and the ratio of the oxygen and argon gas amount of preparing titanium oxide dielectric layer is between 1:15 ~ 20, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 30 ~ 50kw.
In some embodiments, described silicon nitride dielectric layer adopts silumin target to be coated with, and deposit thickness is between 5 ~ 10nm, and the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2.5 ~ 3, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 20 ~ 40kw.
In some embodiments, described zinc oxide dielectric layer adopts aluminium zinc target to be coated with, and deposit thickness is between 5 ~ 10nm, and the ratio of the oxygen and argon gas amount of preparing zinc oxide dielectric layer is between 1 ~ 2:1, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 20 ~ 40kw.
In some embodiments, described nickel chromium triangle metal dielectric layer adopts nichrome target to be coated with, and deposit thickness is between 0.5 ~ 5nm, and the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
In some embodiments, described silver-colored functional layer adopts fine silver target to be coated with, and deposit thickness is between 5 ~ 13nm, and the sputter gas preparing silver-colored functional layer is argon gas, and sputtering pressure is at 1x10
-3mbar to 4x10
-3between mbar, deposition power is between 5 ~ 15kw.
In some embodiments, described nickel chromium triangle metal dielectric layer adopts nichrome target to be coated with, and deposit thickness is between 1 ~ 5nm, and the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
In some embodiments, described zinc-tin oxide dielectric layer adopts Zinc-tin alloy target to be coated with, and deposit thickness is between 10 ~ 20nm, and the oxygen of preparation zinc-tin oxide dielectric layer and the ratio of argon gas amount are between 1.5 ~ 2.5:1, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 30 ~ 60kw.
In some embodiments, described silicon nitride dielectric layer adopts silumin target to be coated with, and deposit thickness is between 10 ~ 40nm, and the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2 ~ 3.5, and sputtering pressure is at 2.5x10
-3mbar to 5x10
-3between mbar, deposition power is between 10 ~ 35kw.
Compared with prior art, the invention has the beneficial effects as follows by off-line magnetron sputtering technique, prepare multi-layer film structure on float glass substrate surface, make it have higher transmitance and choosing coefficient, region of ultra-red is had to the effect of high reverse--bias, the radiant ratio of glass can be effectively reduced simultaneously.
Below in conjunction with accompanying drawing, the description of purport of the present invention is described by example, to know other aspects of the present invention and advantage.
Accompanying drawing explanation
By reference to the accompanying drawings, by detailed description hereafter, above-mentioned and other feature and advantage of the present invention more clearly can be understood, wherein:
Fig. 1 is coated glass schematic diagram prepared by a kind of high permeability radiation coated glass capable of being toughened preparation method of the present invention.
Embodiment
See the accompanying drawing of the specific embodiment of the invention, hereafter in more detail the present invention will be described.But the present invention can realize in many different forms, and should not be construed as by the restriction in the embodiment of this proposition.On the contrary, it is abundant and complete open in order to reach for proposing these embodiments, and makes those skilled in the art understand scope of the present invention completely.
Description, describes a kind of high permeability radiation coated glass capable of being toughened preparation method preparation according to the embodiment of the present invention in detail.As shown in Figure 1, comprise glass substrate 1, this glass substrate is coated with one deck titanium oxide (TiO successively
2) dielectric layer 2, one deck silicon nitride (Si
3n
4) dielectric layer 3, one deck zinc oxide (ZnO) dielectric layer 4, one deck nickel chromium triangle (NiCr) metal alloy layer 51, one deck silver (Ag) functional layer 6, one deck nickel chromium triangle (NiCr) metal alloy layer 52, one deck zinc-tin oxide (Zn
xsn
yo
x+y) dielectric layer 7 and one deck silicon nitride (Si
3n
4) dielectric layer 8.Again tempering is carried out to described coated glass, finally the coated glass after described tempering is detected.
Particularly, above-mentioned titanium oxide dielectric layer 2, deposit thickness is between 5 ~ 15nm, and the ratio of the oxygen and argon gas amount of preparing titanium oxide dielectric layer is between 1:15 ~ 20, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 30 ~ 50kw.
Particularly, above-mentioned silicon nitride dielectric layer 3, deposit thickness is between 5 ~ 10nm, and the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2.5 ~ 3, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 20 ~ 40kw.
Particularly, above-mentioned zinc oxide dielectric layer 4, deposit thickness is between 5 ~ 10nm, and the ratio of the oxygen and argon gas amount of preparing zinc oxide dielectric layer is between 1 ~ 2:1, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 20 ~ 40kw.
Particularly, above-mentioned nickel chromium triangle metal dielectric layer 51, deposit thickness is between 0.5 ~ 5nm, and the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
Particularly, above-mentioned silver-colored functional layer 6, deposit thickness is between 5 ~ 13nm, and the sputter gas preparing silver-colored functional layer is argon gas, and sputtering pressure is at 1x10
-3mbar to 4x10
-3between mbar, deposition power is between 5 ~ 15kw.
Particularly, above-mentioned nickel chromium triangle metal dielectric layer 52, deposit thickness is between 1 ~ 5nm, and the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
Particularly, above-mentioned zinc-tin oxide dielectric layer 6, deposit thickness is between 10 ~ 20nm, and the oxygen of preparation zinc-tin oxide dielectric layer and the ratio of argon gas amount are between 1.5 ~ 2.5:1, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 30 ~ 60kw.
Particularly, above-mentioned silicon nitride dielectric layer 7, deposit thickness is between 10 ~ 40nm, and the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2 ~ 3.5, and sputtering pressure is at 2.5x10
-3mbar to 5x10
-3between mbar, deposition power is between 10 ~ 35kw.
The preparation method of a kind of high permeability radiation coated glass capable of being toughened of the present invention, the saturating Low emissivity product of its Dan Yingao produced, High temperature tempered art breading can be carried out, and before and after tempering, transmitance and color value change, and do not affect product performance very little.Adopt composite dielectric layer can play a protective role to functional layer silver (Ag) layer, effectively avoid silver ions to condense and silver layer oxidized etc., outermost layer silicon nitride has stable thermal shock resistance in thermal treatment.
The present invention is used for horizontal continous way magnetron sputtering coater, comprising 6 rotating cathodes, 3 planar cathodes, amount to 9 negative electrodes.Use wherein 5 rotating cathodes and 3 planar cathodes to produce, produce high permeability radiation coated glass capable of being toughened, Process configuration is as following table 1:
| Negative electrode sequence number | Target material | Cathode type |
| 1# | TiO 2 | Exchange and rotate |
| 2# | SiAl(90：10) | Exchange and rotate |
| 3# | ZnAl(98：2) | Exchange and rotate |
| 4# | NiCr(80：20) | Direct current planar |
| 5# | Ag | Direct current planar |
| 6# | NiCr(80：20) | Direct current planar |
| 7# | ZnSn(50：50) | Exchange and rotate |
| 8# | SiAl(90：10) | Exchange and rotate |
After the glass tempering be coated with according to above-mentioned technique, optical property is as follows:
Visible transmission ratio is 82.6%;
Visible light reflectance is 9.1%;
Glass surface a* is-0.8;
Glass surface b* is-12.37;
Choosing coefficient is 1.23;
Heat transfer coefficient is 1.4W/ (m
2k);
Radiant ratio is 0.08.
Prior art is compared, the invention has the beneficial effects as follows by off-line magnetron sputtering technique, prepare multi-layer film structure on float glass substrate surface, make it have higher transmitance and choosing coefficient, region of ultra-red is had to the effect of high reverse--bias, the radiant ratio of glass can be effectively reduced simultaneously.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just design according to the present invention can make many modifications and variations without the need to creative work.All technician in the art, all should by the determined protection domain of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. a high permeability radiation coated glass capable of being toughened preparation method, it is characterized in that, one glass substrate is set, described glass substrate is coated with one deck titanium oxide dielectric layer successively, one deck silicon nitride dielectric layer, one deck zinc oxide dielectric layer, one deck nickel chromium triangle metal alloy layer, one deck silver functional layer, one deck nickel chromium triangle metal alloy layer, one deck zinc-tin oxide dielectric layer and one deck silicon nitride dielectric layer.
2. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described titanium oxide dielectric layer adopts titanium oxide target to be coated with, deposit thickness is between 5 ~ 15nm, the ratio of the oxygen and argon gas amount of preparing titanium oxide dielectric layer is between 1:15 ~ 20, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 30 ~ 50kw.
3. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described silicon nitride dielectric layer adopts silumin target to be coated with, deposit thickness is between 5 ~ 10nm, the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2.5 ~ 3, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 20 ~ 40kw.
4. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described zinc oxide dielectric layer adopts aluminium zinc target to be coated with, deposit thickness is between 5 ~ 10nm, the ratio of the oxygen and argon gas amount of preparing zinc oxide dielectric layer is between 1 ~ 2:1, and sputtering pressure is at 2x10
-3mbar to 4x10
-3between mbar, deposition power is between 20 ~ 40kw.
5. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described nickel chromium triangle metal dielectric layer adopts nichrome target to be coated with, and deposit thickness is between 0.5 ~ 5nm, the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
6. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described silver-colored functional layer adopts fine silver target to be coated with, and deposit thickness is between 5 ~ 13nm, the sputter gas preparing silver-colored functional layer is argon gas, and sputtering pressure is at 1x10
-3mbar to 4x10
-3between mbar, deposition power is between 5 ~ 15kw.
7. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described nickel chromium triangle metal dielectric layer adopts nichrome target to be coated with, and deposit thickness is between 1 ~ 5nm, the sputter gas preparing nickel chromium triangle metal dielectric layer is argon gas, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 1 ~ 10kw.
8. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described zinc-tin oxide dielectric layer adopts Zinc-tin alloy target to be coated with, deposit thickness is between 10 ~ 20nm, the oxygen of preparation zinc-tin oxide dielectric layer and the ratio of argon gas amount are between 1.5 ~ 2.5:1, and sputtering pressure is at 3x10
-3mbar to 5x10
-3between mbar, deposition power is between 30 ~ 60kw.
9. high permeability radiation coated glass capable of being toughened preparation method according to claim 1, it is characterized in that, described silicon nitride dielectric layer adopts silumin target to be coated with, deposit thickness is between 10 ~ 40nm, the nitrogen of preparation silicon nitride dielectric layer and the ratio of argon gas amount are between 1:2 ~ 3.5, and sputtering pressure is at 2.5x10
-3mbar to 5x10
-3between mbar, deposition power is between 10 ~ 35kw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410510006.3A CN104230182A (en) | 2014-09-28 | 2014-09-28 | Preparation method of high-transmittance tempered low-emissivity coated glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410510006.3A CN104230182A (en) | 2014-09-28 | 2014-09-28 | Preparation method of high-transmittance tempered low-emissivity coated glass |
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| Publication Number | Publication Date |
|---|---|
| CN104230182A true CN104230182A (en) | 2014-12-24 |
Family
ID=52219201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410510006.3A Pending CN104230182A (en) | 2014-09-28 | 2014-09-28 | Preparation method of high-transmittance tempered low-emissivity coated glass |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271814A (en) * | 2015-09-28 | 2016-01-27 | 赛柏利安工业技术（苏州）有限公司 | Membrane deposition method of single silver energy-saving glass of selective sunlight filtering membrane system |
| CN106431012A (en) * | 2016-11-25 | 2017-02-22 | 武汉长利新材料科技有限公司 | Temperable high-transparency and low-radiation coated glass and manufacturing method thereof |
| CN106477915A (en) * | 2016-11-25 | 2017-03-08 | 武汉长利新材料科技有限公司 | Radiation coated glass capable of being toughened and its manufacture method |
| CN108603689A (en) * | 2016-01-29 | 2018-09-28 | 株式会社丰田自动织机 | Solar energy heat collection pipe and its manufacturing method |
| CN109790067A (en) * | 2016-09-26 | 2019-05-21 | 法国圣戈班玻璃厂 | The substrate coated with low-emissivity coating |
| CN111138086A (en) * | 2018-11-06 | 2020-05-12 | 中国南玻集团股份有限公司 | Double silver glass |
| CN108603692B (en) * | 2016-01-29 | 2020-12-18 | 株式会社丰田自动织机 | Solar heat collecting pipe |
| CN113149461A (en) * | 2021-05-11 | 2021-07-23 | 中建材（内江）玻璃高新技术有限公司 | Low-emissivity glass |
| CN114163142A (en) * | 2021-11-23 | 2022-03-11 | 太仓耀华玻璃有限公司 | Magnetron sputtering single-silver LOW-E toughened glass and manufacturing process thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105271814A (en) * | 2015-09-28 | 2016-01-27 | 赛柏利安工业技术（苏州）有限公司 | Membrane deposition method of single silver energy-saving glass of selective sunlight filtering membrane system |
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| CN108603692B (en) * | 2016-01-29 | 2020-12-18 | 株式会社丰田自动织机 | Solar heat collecting pipe |
| CN108603689B (en) * | 2016-01-29 | 2021-06-22 | 株式会社丰田自动织机 | Solar heat collecting pipe and manufacturing method thereof |
| CN109790067A (en) * | 2016-09-26 | 2019-05-21 | 法国圣戈班玻璃厂 | The substrate coated with low-emissivity coating |
| CN106431012A (en) * | 2016-11-25 | 2017-02-22 | 武汉长利新材料科技有限公司 | Temperable high-transparency and low-radiation coated glass and manufacturing method thereof |
| CN106477915A (en) * | 2016-11-25 | 2017-03-08 | 武汉长利新材料科技有限公司 | Radiation coated glass capable of being toughened and its manufacture method |
| CN111138086A (en) * | 2018-11-06 | 2020-05-12 | 中国南玻集团股份有限公司 | Double silver glass |
| CN113149461A (en) * | 2021-05-11 | 2021-07-23 | 中建材（内江）玻璃高新技术有限公司 | Low-emissivity glass |
| CN114163142A (en) * | 2021-11-23 | 2022-03-11 | 太仓耀华玻璃有限公司 | Magnetron sputtering single-silver LOW-E toughened glass and manufacturing process thereof |
| CN114163142B (en) * | 2021-11-23 | 2024-02-06 | 太仓耀华玻璃有限公司 | Magnetron sputtering single-silver LOW-E toughened glass and manufacturing process thereof |
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Application publication date: 20141224 |