CN104202043A - Quadrature push-push voltage-controlled oscillator based on circle structure - Google Patents
Quadrature push-push voltage-controlled oscillator based on circle structure Download PDFInfo
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- CN104202043A CN104202043A CN201410383790.6A CN201410383790A CN104202043A CN 104202043 A CN104202043 A CN 104202043A CN 201410383790 A CN201410383790 A CN 201410383790A CN 104202043 A CN104202043 A CN 104202043A
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Abstract
The invention relates to a quadrature push-push voltage-controlled oscillator based on a circle structure. The oscillator comprises a four-stage delay unit, the phase relation between output signals in a circle oscillator constructed by a four-stage inverting amplifier is combined with a harmonic wave selection element to extract secondary harmonic waves in the output signals, mutually quadrature phases of the extracted secondary harmonic waves are used as the output of the circle structure so as to form the push-push voltage-controlled oscillator in quadrature output. Under the condition that the process is limited, the structure can effectively improve the frequency of the quadrature local oscillator output signal, and the structure can be used for providing a high-quality quadrature oscillator signal for millimeter wave, submillimeter wave, in particular a terahertz frequency band transceiving front end.
Description
Technical field
The invention belongs to microelectronics technical field, relate to a kind of orthogonal pushing away based on loop configuration-push controlled oscillator.
Background technology
Wireless receiving and dispatching front end, according to the difference of structure, can be divided into superheterodyne receiver, low intermediate frequency receiver and zero intermediate frequency reciver, and wherein zero intermediate frequency reciver is integrated owing to realizing monolithic, receives increasing concern.In this structure, radiofrequency signal and orthogonal two-way local oscillation signal mixing each other, directly produce baseband signal.The phase error of orthogonal two-way local oscillation signal and amplitude mismatch can directly affect receiver mirror image and suppress ability and demodulation performance.Meanwhile, because the circuit working that produces local oscillation signal is at the highest frequency place of circuit, its frequency fan-out capability and power consumption etc. are determining receive frequency and the power consumption of whole receiver.Therefore, in zero intermediate frequency reciver, the generation of orthogonal local oscillation signal is very crucial.
In radio circuit, can adopt passive multiphase filter to produce orthogonal local oscillation signal, as shown in Figure 1.VCO produces differential output signal, produces orthogonal local oscillation signal through the passive multiphase filter of high-frequency amplifier Hyblid Buffer Amplifier rear drive.The advantage that passive poly phase filter produces orthogonal signalling is the simple in structure of voltage controlled oscillator, but because passive multiphase filter has the insertion loss of 6dB, high-frequency amplifier must provide enough compensating gains, and this causes the load capacitance increase of voltage controlled oscillator output and the increase of circuit overall power consumption; On the other hand, the fluctuation of integrated circuit technology can make resistance value and the capacitance on different paths produce deviation, causes amplitude and the phase place mismatch respectively of orthogonal two paths of signals.The another kind of method that produces orthogonal local oscillation signal is to adopt orthogonal voltage-controlled vibrator, as shown in Figure 2.Two oscillators produce orthogonal signalling by certain coupled modes, and the method circuit structure is simple, and loop structure weakens the mismatch that process deviation causes, therefore more in ghz band range applications.
Along with the frequency of radio communication progresses into millimeter wave, submillimeter wave, especially Terahertz frequency range, above-mentioned Quadrature signal generation circuit has run into new problem.Concerning orthogonal voltage-controlled vibrator, produce quite difficulty of so high-frequency oscillator signal, especially approach the cut-off frequency f of oscillator active device when required frequency
ttime.Concerning passive poly phase filter, except the problems referred to above, to realize the also suitable difficulty of amplifier with 6dB gain in above-mentioned frequency range.All these generations to Terahertz frequency range orthogonal local oscillation signal and the development of Terahertz radio communication propose serious challenge.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, propose a kind of orthogonal pushing away based on loop configuration-push controlled oscillator.Utilize the phase relation between output signal in the ring oscillator that level Four inverting amplifier forms, extract the second harmonic in each output signal in conjunction with harmonic wave selectors, what build orthogonal output pushes away-pushes controlled oscillator, realizes millimeter wave, submillimeter wave, the particularly generation of Terahertz frequency range receiving and transmitting front end orthogonal local oscillation signal.
A kind of orthogonal pushing away based on loop configuration of the present invention-push controlled oscillator comprises level Four delay cell, the first output of first order delay cell connects the in-phase input end of second level delay cell, and the second output of first order delay cell connects the inverting input of second level delay cell; The first output of second level delay cell connects the in-phase input end of third level delay cell, and the second output of second level delay cell connects the inverting input of third level delay cell; The first output of third level delay cell connects the in-phase input end of fourth stage delay cell, and the second output of third level delay cell connects the inverting input of fourth stage delay cell; The first output of fourth stage delay cell connects the inverting input of first order delay cell, and the second output of fourth stage delay cell connects the in-phase input end of first order delay cell; The external voltage control end of the external voltage control end of first order delay cell, the external voltage control end of second level delay cell, third level delay cell, the external voltage control end of fourth stage delay cell connect, as orthogonal pushing away-the push voltage controling end of controlled oscillator; The 3rd output of first order delay cell is as orthogonal pushing away-push the first output of controlled oscillator; The 3rd output of second level delay cell is as orthogonal pushing away-push the second output of controlled oscillator; The 3rd output of third level delay cell is as orthogonal pushing away-push the 3rd output of controlled oscillator; The 3rd output of fourth stage delay cell is as orthogonal pushing away-push the 4th output of controlled oscillator.
Every grade of delay cell comprises two NMOS pipes, two PMOS pipes, two varactors, two inductance and a harmonic wave selectors.The drain electrode of the grid of the one NMOS pipe, the drain electrode of the 2nd NMOS pipe, the 2nd PMOS pipe, one end of the second varactor are connected with one end of the second inductance, as the second output of delay cell; The drain electrode of the grid of the 2nd NMOS pipe, the drain electrode of a NMOS pipe, a PMOS pipe, one end of the first varactor are connected with one end of the first inductance, as the first output of delay cell; The grid of the one PMOS pipe connects the in-phase input end of delay cell; The grid of the 2nd PMOS pipe connects the inverting input of delay cell; The other end of the first inductance is connected with the other end of the second inductance; The other end of the first varactor is connected with the other end of the second varactor, as external voltage control end; The source electrode of the one PMOS pipe, the 2nd PMOS pipe meets power vd D; The one NMOS pipe, the 2nd source electrode of NMOS pipe and one end of frequency selective element are connected, as the 3rd output of delay cell; The other end ground connection of harmonic wave selectors.
In the present invention, the first inductance, the second inductance, the first varactor, the second varactor, a NMOS and the 2nd NMOS form a capacitor and inductor type voltage controlled oscillator; The one PMOS pipe, the 2nd PMOS pipe be as the input of delay cell, realizes interconnected to form loop between each delay cell; Frequency selective element is realized the selection output of the second harmonic in delay cell output signal.
According to the feature of loop, the phase phasic difference between delay cell output signal and input signal is 180
o+ 45
o, the phase place of each delay cell output signal is (N-1) x (180
o+ 45
o), the progression that wherein N is delay cell.According to the phase relation between second harmonic component and fundametal compoment in delay cell output signal, the phase place that can obtain each delay cell the 3rd output port output signal is (N-1) x90 again
o, the progression that wherein N is delay cell.Like this, (phase place is 0 to the 3rd output port signal of the first delay cell
o), the 3rd delay cell the 3rd output port signal (phase place is 180
o) and the 3rd output port signal of the second delay cell (phase place is 90
o), the 4th delay cell the 3rd output port signal (phase place is 270
o) orthogonal signalling each other, realize orthogonal pushing away-push controlled oscillator.
The present invention, in the situation that technique is limited, can effectively improve the frequency of orthogonal local oscillation output signal, for millimeter wave, submillimeter wave, particularly Terahertz frequency range receiving and transmitting front end provide high-quality orthogonal local oscillation signal.
Brief description of the drawings
Fig. 1 is the orthogonal oscillating signal generating circuit based on passive poly phase filter;
Fig. 2 is the orthogonal oscillating signal generating circuit based on quadrature oscillator;
Fig. 3 is the structure that the present invention is based on that loop configuration is orthogonal and push away-push controlled oscillator;
Fig. 4 is the structure of delay cell in Fig. 3.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
The invention provides a kind of orthogonal pushing away based on loop configuration-push controlled oscillator.Utilize the phase relation between output signal in the ring oscillator that level Four inverting amplifier forms, extract the second harmonic in each output signal in conjunction with harmonic wave selectors, what build orthogonal output pushes away-pushes controlled oscillator, realizes millimeter wave, submillimeter wave, the particularly generation of Terahertz frequency range receiving and transmitting front end orthogonal local oscillation signal.
As shown in Figure 3, the present invention includes level Four delay cell, the first output end vo ut_f of first order delay cell D1 connects the in-phase input end Vin+ of second level delay cell D2, and the second output end vo utb_f of first order delay cell D1 connects the inverting input Vin-of second level delay cell; The first output end vo ut_f of second level delay cell D2 connects the in-phase input end Vin+ of third level delay cell D3, and the second output end vo utb_f of second level delay cell D2 connects the inverting input Vin-of third level delay cell; The first output end vo ut_f of third level delay cell D3 connects the in-phase input end Vin+ of fourth stage delay cell D4, and the second output end vo utb_f of third level delay cell D3 connects the inverting input Vin-of fourth stage delay cell D4; The first output end vo ut_f of fourth stage delay cell D4 connects the inverting input Vin-of first order delay cell D1, and the second output end vo utb_f of fourth stage delay cell D4 connects the in-phase input end Vin+ of first order delay cell D1; The external voltage control end Vtune of the external voltage control end Vtune of first order delay cell D1, the external voltage control end Vtune of second level delay cell D2, third level delay cell D3, the external voltage control end Vctrl of fourth stage delay cell D4 connect, as orthogonal pushing away-the push voltage controling end Vctrl of controlled oscillator; The 3rd output end vo ut_2f of first order delay cell D1 is as orthogonal pushing away-push the first output I+ of controlled oscillator; The 3rd output end vo ut_2f of second level delay cell D2 is as orthogonal pushing away-push the second output Q+ of controlled oscillator; The 3rd output end vo ut_2f of third level delay cell D3 is as orthogonal pushing away-push the 3rd output I-of controlled oscillator; The 3rd output end vo ut_2f of fourth stage delay cell D4 is as orthogonal pushing away-push the 4th output Q-of controlled oscillator.
Every grade of delay cell comprises two NMOS pipes, two PMOS pipes, two varactors, two inductance and a harmonic wave selectors, as shown in Figure 4.The grid of the one NMOS pipe MN1, the drain electrode of the 2nd NMOS pipe MN2, the drain electrode of the 2nd PMOS pipe MP2, one end of the second varactor Cvar2 are connected with one end of the second inductance L 2, as the second output end vo utb_f of delay cell; The grid of the 2nd NMOS pipe MN2, the drain electrode of a NMOS pipe MN1, the drain electrode of a PMOS pipe MP1, one end of the first varactor Cvar1 are connected with one end of the first inductance L 1, as the first output end vo ut_f of delay cell; The grid of the one PMOS pipe MP1 meets the in-phase input end Vin+ of delay cell; The grid of the 2nd PMOS pipe MP2 meets the inverting input Vin-of delay cell; The other end of the first inductance l1 is connected with the other end of the second inductance l2; The other end of the first varactor Cvar1 is connected with the other end of the second varactor Cvar2, as external voltage control end Vtune; The source electrode of the one PMOS pipe MP1, the 2nd PMOS pipe MP2 meets power vd D; The source electrode of the one NMOS pipe MN1, the 2nd NMOS pipe MN2 is connected with one end of frequency selective element T1, as the 3rd output end vo ut_2f of delay cell; The other end ground connection of harmonic wave selectors.
The above-mentioned orthogonal output based on loop configuration pushes away-pushes in controlled oscillator, and the frequency that makes output orthogonal signal is f0, and the resonance frequency of the resonant network being made up of inductance L 1/L2 and varactor Cvar1/Cvar2 in delay cell is f0/2; Varactor Cvar1/Cvar2 chooses the requirement that should meet reference frequency output, supposes that reference frequency output is (f0
max, f0
min), the value of inductance L 1/L2 is L0, the capacitance scope of this varactor will comprise following scope: (1/ (2
f0
max)
2l0,1/ (2
f0
min)
2l0); The electrical length of frequency selective element T1 is 1/4 of frequency f 0 place's signal wavelength, to realize effective output of second harmonic.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Having read after foregoing those skilled in the art, will be all apparent for multiple amendment of the present invention and replacement.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (3)
1. orthogonal pushing away based on loop configuration-push controlled oscillator, it is characterized in that: comprise level Four delay cell, the first output of first order delay cell connects the in-phase input end of second level delay cell, and the second output of first order delay cell connects the inverting input of second level delay cell; The first output of second level delay cell connects the in-phase input end of third level delay cell, and the second output of second level delay cell connects the inverting input of third level delay cell; The first output of third level delay cell connects the in-phase input end of fourth stage delay cell, and the second output of third level delay cell connects the inverting input of fourth stage delay cell; The first output of fourth stage delay cell connects the inverting input of first order delay cell, and the second output of fourth stage delay cell connects the in-phase input end of first order delay cell; The external voltage control end of the external voltage control end of first order delay cell, the external voltage control end of second level delay cell, third level delay cell, the external voltage control end of fourth stage delay cell connect, as orthogonal pushing away-the push voltage controling end of controlled oscillator; The 3rd output of first order delay cell is as orthogonal pushing away-push the first output of controlled oscillator; The 3rd output of second level delay cell is as orthogonal pushing away-push the second output of controlled oscillator; The 3rd output of third level delay cell is as orthogonal pushing away-push the 3rd output of controlled oscillator; The 3rd output of fourth stage delay cell is as orthogonal pushing away-push the 4th output of controlled oscillator.
2. a kind of orthogonal pushing away based on loop configuration according to claim 1-push controlled oscillator, it is characterized in that: every grade of delay cell comprises two NMOS pipes, two PMOS pipes, two varactors, two inductance and a harmonic wave selectors, the drain electrode of the grid of the one NMOS pipe, the drain electrode of the 2nd NMOS pipe, the 2nd PMOS pipe, one end of the second varactor are connected with one end of the second inductance, as the second output of delay cell; The drain electrode of the grid of the 2nd NMOS pipe, the drain electrode of a NMOS pipe, a PMOS pipe, one end of the first varactor are connected with one end of the first inductance, as the first output of delay cell; The grid of the one PMOS pipe connects the in-phase input end of delay cell; The grid of the 2nd PMOS pipe connects the inverting input of delay cell; The other end of the first inductance is connected with the other end of the second inductance; The other end of the first varactor is connected with the other end of the second varactor, as external voltage control end; The source electrode of the one PMOS pipe, the 2nd PMOS pipe meets power vd D; The one NMOS pipe, the 2nd source electrode of NMOS pipe and one end of frequency selective element are connected, as the 3rd output of delay cell; The other end ground connection of harmonic wave selectors.
3. a kind of orthogonal pushing away based on loop configuration according to claim 2-push controlled oscillator, is characterized in that: described harmonic wave selectors is a transmission line, 1/4 of the oscillator signal harmonic wavelength that length is level Four loop that delay cell forms.
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|---|---|---|---|
| CN201410383790.6A CN104202043B (en) | 2014-08-06 | 2014-08-06 | A kind of orthogonal pushing controlled oscillator based on loop configuration |
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| CN201410383790.6A CN104202043B (en) | 2014-08-06 | 2014-08-06 | A kind of orthogonal pushing controlled oscillator based on loop configuration |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055226A (en) * | 2017-12-27 | 2018-05-18 | 北京理工大学 | A kind of synchronous method for Terahertz communication based on pseudo-code auxiliary |
| CN108092929A (en) * | 2017-12-27 | 2018-05-29 | 北京理工大学 | A kind of synchronous method for Terahertz communication |
| CN109540285A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Novel heterodyne detector based on substrate integration wave-guide antenna |
| CN110677127A (en) * | 2019-09-06 | 2020-01-10 | 电子科技大学 | Class-F voltage-controlled oscillator |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055226A (en) * | 2017-12-27 | 2018-05-18 | 北京理工大学 | A kind of synchronous method for Terahertz communication based on pseudo-code auxiliary |
| CN108092929A (en) * | 2017-12-27 | 2018-05-29 | 北京理工大学 | A kind of synchronous method for Terahertz communication |
| CN108055226B (en) * | 2017-12-27 | 2020-06-16 | 北京理工大学 | Pseudo code assistance-based synchronization method for terahertz communication |
| CN108092929B (en) * | 2017-12-27 | 2020-07-28 | 北京理工大学 | Synchronization method for terahertz communication |
| CN109540285A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Novel heterodyne detector based on substrate integration wave-guide antenna |
| CN110677127A (en) * | 2019-09-06 | 2020-01-10 | 电子科技大学 | Class-F voltage-controlled oscillator |
| CN110677127B (en) * | 2019-09-06 | 2022-11-25 | 电子科技大学 | Class-F voltage-controlled oscillator |
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