CN104136641A - Method of processing polycrystalline diamond material - Google Patents

Method of processing polycrystalline diamond material Download PDF

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Publication number
CN104136641A
CN104136641A CN201280070378.8A CN201280070378A CN104136641A CN 104136641 A CN104136641 A CN 104136641A CN 201280070378 A CN201280070378 A CN 201280070378A CN 104136641 A CN104136641 A CN 104136641A
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Prior art keywords
pcd
leaching
diamond
mixture
solvent
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CN201280070378.8A
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Chinese (zh)
Inventor
汉弗莱·萨姆克罗·路基萨尼·希特赫比
安德鲁·恩德洛武
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Element Six Abrasives SA
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Element Six Abrasives SA
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Publication of CN104136641A publication Critical patent/CN104136641A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C04B2235/427—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Earth Drilling (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A method of processing a polycrystalline diamond (PCD) material having a non-diamond phase comprising a diamond catalyst/solvent material comprises leaching an amount of the diamond catalyst/solvent from the PCD material by exposing at least a portion of the PCD material to a leaching mixture. The leaching mixture comprises hydrochloric acid and one or more additional mineral acids, the molar concentration of the hydrochloric acid being greater than the molar concentration of the one or more additional mineral acids in the leaching mixture.

Description

Process the method for polycrystalline diamond abrasive compact
Technical field
Present disclosure relate to a kind of processing polycrystalline diamond (PCD) material main body method and relate to the mixture for described processing.
Background technology
For mach cutting tool blade (insert) and other instrument, can comprise one deck polycrystalline diamond (PCD) that is bonded to Wimet (cemented carbide) basic unit.PCD is a kind of example that is also referred to as the superhard material of superhard abrasive material, and described superhard material has the hardness value that is substantially greater than cemented tungsten carbide.
The parts that contain PCD are widely used in various tool, and these instruments are used for cutting, machining, boring or degraded hard or abrasive property material, as rock, metal, pottery, matrix material with containing wood material.The diamond particles that PCD contains symbiosis substantially, these diamond particles bodies form skeleton body, and it limits the gap between these diamond particles.The diamond that PCD material contains at least about 80 volume %, and can be by the situation that be also referred to as the sintering aid of adamantine catalystic material and exist, the aggregate of diamond particles is stood higher than about 5Gpa, typically be the hyperpressure of about 5.5Gpa and at least about 1200 ℃, typically be the temperature of about 1440 ℃ and prepare PCD material.It is at diamond, than graphite, under more thermodynamically stable pressure and temperature condition, to promote the material of the direct symbiosis of diamond particles that adamantine catalystic material can be regarded as.
The example of adamantine catalystic material is some alloy of cobalt, iron, nickel and the alloy that comprises any one these element.PCD can be formed in sintered cobalt tungsten carbide substrate, and this basic unit can be provided for the source of the cobalt catalyst material of this PCD.During the main body of this PCD material of sintering, the composition of this cemented carbide substrate, for example, from the cobalt of sintered cobalt tungsten carbide substrate, liquefaction and from the zone flows near this diamond particle volume to the gap area these diamond particles.In this example, cobalt is as catalyzer, to contribute to the formation of the diamond particles of combination.Alternatively, can before diamond particle and basic unit are carried out to HPHT processing, metal solvent catalyzer be mixed with diamond particle.Gap in PCD material can be filled with catalystic material at least in part.Therefore the diamond phase that symbiosis diamond lattic structure comprises original diamond particles and newly separates out or regrow, these primary particles of its bridge joint.In final sintering structure, catalyst/solvent material is generally still stayed at least some gaps that are present between this sintered diamond particles.
This sintering PCD has enough wear resistancies and hardness for aggressive wear, cutting and boring application.
Yet, the known problem that this class PCD sintered compact (compact) runs into is: solvent/catalyst material residual in microstructure gap has injurious effects to this sintered compact performance at high temperature, because believe, in diamond wafers (table), the existence of solvent/catalyst has reduced the thermostability of this diamond wafers at these rising temperature.For example, in the difference of the thermal expansivity between diamond particles and solvent/catalyst, be considered to cause rag or the crackle of this PCD thin slice of cutting element during boring or cutting operation.The rag of this PCD thin slice or crackle can reduce the mechanical characteristics of cutting element or cause cutting element to lose efficacy.In addition, at high temperature, diamond particles may be with solvent/catalyst generation decomposition or is oppositely transformed.Under thermal extremes, part diamond particles may convert carbon monoxide, carbonic acid gas, graphite or its composition to, has reduced thus the mechanical characteristics of PCD material.
Potential solution for these problems is from PCD material, to remove catalyst/solvent or tackiness agent phase.
Chemical Leaching (leach) is often used in from the gap area of the main body of PCD material, the region such as the working-surface near this PCD, removes metal solvent catalyzer, such as cobalt.Traditional Chemical Leaching technology often comprises the use of high density, toxicity and/or caustic soln, such as chloroazotic acid with comprise the mixture of hydrofluoric acid (HF), to dissolve from polycrystalline diamond abrasive compact and remove metallic solvent/catalyst.Because this class mixture is height toxicity, the use of these materials can bring serious health and safety risk, therefore with this class mixture process PCD technique must by professional well control and monitoring condition under carry out, to minimize the risk that this class technique injures operator.
In addition, usually, from PCD thin slice, particularly, from the required thicker PCD thin slice of current application, the piece that effectively removes metal catalysts/solvents is extremely difficult and time-consuming.In general, current techniques concentrates on to obtain the PCD of high diamond density and correspondingly obtain and has the extremely PCD in the metal catalysts/solvents pond of fine distribution.The infiltration of this meticulous network opposing leaching agent, makes after remaining catalyst/solvent often stays the sintered compact having leached.In addition, thereby the leaching degree of depth that acquisition can be estimated may expend and makes for a long time to be commercially difficult to carry out, or requires such as the hole undesirable intervention of this PCD thin slice of extreme acid treatment or physics.
Therefore exist by use for the treatment of or the technology of the main body of processing PCD material to overcome or substantially to improve the needs of the problems referred to above.
Summary of the invention
According to the first string, the invention provides the method for processing polycrystalline diamond (PCD) material with the non-diamond phase that comprises diamond catalyst/solvent material, described method comprises by least part of PCD material is exposed to and leaches mixture and from this PCD material, leach a certain amount of diamond catalyst/solvent, described leaching mixture comprises hydrochloric acid and one or more other mineral acids, and in this leaching mixture, the volumetric molar concentration of hydrochloric acid is greater than the volumetric molar concentration of one or more other mineral acids.
Leaching mixture can comprise, for example, comprises one or more one or more mineral acids in sulfuric acid, phosphoric acid, perchloric acid or nitric acid.
In certain embodiments, the volumetric molar concentration of hydrochloric acid is 3M or larger.
In certain embodiments, infusion solution comprises the combination of two or more mineral acids except hydrochloric acid, and the volumetric molar concentration of described two or more mineral acids is substantially the same.
Described method also can comprise: during PCD material being exposed to the step that leaches mixture, infusion solution is heated to be equal to or higher than to the temperature of the boiling temperature of this leaching mixture.
For the average diamond particle size of approximately 10 microns, the leaching rate of being realized by acid mixture can be about 10 microns per hour in certain embodiments.
Accompanying drawing explanation
Referring now to appended accompanying drawing, only by way of example, various embodiment are described in more details, wherein:
Fig. 1 is for for piercing the perspective schematic view of PCD cutting tool blade of the cutting bit in soil; With
Fig. 2 is the schematic sectional view of PCD cutting tool blade of Fig. 1 and the schematic expanded view that represents the microtexture of this PCD material;
In institute's drawings attached, identical reference number represents each identical feature.
Embodiment
As used herein, " PCD material " material for containing diamond particles body, its overwhelming majority is directly to mutually combine each other, and at least about 80% volume that wherein adamantine content is this material.In an embodiment of PCD material, the gap between diamond particles can adopt at least in part containing the binder material that is useful on adamantine catalyzer and/or non-diamond phase and fill.
As used herein, " for adamantine catalystic material " is at diamond on than diamond thermodynamics under more stable pressure and temperature, can promote adamantine growth or the direct material of diamond and diamond symbiosis between diamond particles.
At this term used " volumetric molar concentration ", can refer to take the concentration that mol/L is unit at the temperature of about 25 ℃.For example, the solution that contains solute A under the volumetric molar concentration of 1M can comprise the solute A of 1mol in every liter of solution.
Fig. 1 represents that it comprises the PCD main body 20 that is bonded to cemented tungsten carbide basic unit 30 for piercing the PCD cutting tool blade 10 of the drill bit (not shown) in soil.
Fig. 2 is the sectional view through the PCD cutting tool blade 10 of Fig. 1.The microtexture 21 of PCD main body 20 is also illustrated, and comprise the skeleton body (skeletal mass) for limiting the diamond particles mutually combining 22 in the gap 24 between diamond particles, gap 24 is filled with filler material at least partly, comprise for example cobalt, nickel or iron for adamantine solvent/catalyst.
According to some embodiment of the method, produced the sintering main body of PCD material, it has diamond and adamantine combination and has simultaneously and comprises the second-phase that is dispersed in the solvent/catalyst in its microtexture.Use HpHT condition, can form PCD body of material according to standard method, to produce sintering PCD thin slice.These PCD thin slices that embodiment by described method is leached generally but do not have uniquely about 1.5mm to the thickness of about 3.0mm.
Have been found that, in various application, in PCD thin slice, remove non-tackiness agent phase, it is called as leaching traditionally, expect, described application examples expects polycrystalline diamond dish to be attached to the situation on carbide post in this way again, and it is generally attended by for example for this adheres to successfully permeating again of adhesive material again.Carbide particle can stop the path that occurs to permeate again along it potentially.These obstructions have been avoided adhering to permeating completely again of cycle period adhesive material again, and it has harmful result for attaching process more conversely.
And, in microtexture gap, the remnants of solvent/catalyst material exist and are considered to have deleterious effect for the performance of PCD sintered compact under high temperature, because institute is recognized in order that the existence of the solvent/catalyst in diamond wafers has reduced the thermostability of diamond wafers at these rising temperature.
About the speed of reaction leaching, be considered to initially to be arranged by the chemical speed when acid contact PCD thin slice surperficial, afterwards by being arranged when sour rate of diffusion while diffusing through the hole of PCD thin slice.
Say traditionally, for remove wolfram varbide (WC), HF-HNO from sintering PCD thin slice 3be illustrated as is the most effective medium.HF-HNO 3problem be that it has volatility, and when heating is during this acid, need special technology, for example air seal technology.If this technology is not provided, the application of temperature will reduce HF-HNO 3usefulness, this is to cause due to the evaporation of HF (it is poisonous) and the formation that is generally the NO kind of gas, therefore, needs the frequent of sour medium to supplement.And, as mentioned above, conventionally can need heat to accelerate leaching process, thereby make described processing commercially feasible.Another problem is HF-HNO 3for most of containers, there is corrodibility, make reaction be difficult to implement.
In order to improve surperficial performance and the thermotolerance of PCD body of material 20, the metal solvent catalyzer of at least a portion such as cobalt, can remove from the gap 22 of the PCD material 20 of at least a portion.In addition, can from the main body of the PCD material 20 of at least a portion, remove tungsten and/or wolfram varbide.
Chemical Leaching be used to or the main body of the PCD material 20 of the desired depth from the main body of PCD material 20 to the outside surface from PCD body of material or from substantially removing metal solvent catalyzer all PCD materials 20.After leaching, therefore the main body of PCD material 20 can comprise the first volume that there is no metal solvent catalyzer.Yet a small amount of solvent/catalyst can be retained in not touch and leach in the gap of processing.In addition, after leaching, the main body of PCD material 20 also can comprise the volume that contains metal solvent catalyzer.In certain embodiments, this other volume may be away from the surface of the exposure of one or more PCD material 20 main bodys.
Can comprise for example metallic solvent/catalyst and the clearance material of taking one or more additives of carbide additive form, can the gap 22 in PCD material 20 main bodys, leach by PCD material being exposed to suitable leaching mixture.
According to embodiment, this leaching mixture comprises one or more mineral acids except hydrochloric acid, and wherein, the volumetric molar concentration that is present in the hydrochloric acid in leaching mixture is greater than the volumetric molar concentration of other mineral acid in mixture.The main body of PCD material can be exposed in this leaching mixture in any suitable manner, for example comprises, by the main body of the PCD material 20 of at least a portion is immersed in, leaches for some time in mixture.
According to some embodiment, the main body of PCD material can be exposed to leaching mixture at elevated temperatures, for example, reach the temperature of this Ore Leaching mixture boiling.The temperature that the main body of PCD material is exposed to rising during leaching can increase the degree of depth that PCD material can be leached, and reduces to reach and expect to leach the required extraction time of the degree of depth.
If only the main body of some PCD material needs to be leached; and if main body is still attached in basic unit; basic unit at least partly protected seam surround, thereby avoid infusion solution during leaching, chemically to destroy some part of PCD body of material and/or basic unit attached thereto.This configuration can provide the selectively leaching of the main body of PCD material, and it can be useful.After leaching, can remove protective layer or mask.
In addition, in certain embodiments, at least part of PCD body of material and infusion solution can be exposed at least one in electric current, microwave radiation and/or ultrasonic energy, so that the speed when improving PCD body of material and leaching.
The example of applicable mineral acid can comprise arbitrary composition or other mineral acid of for example sulfuric acid, phosphoric acid, perchloric acid or nitric acid and/or above-mentioned substance.
In certain embodiments, hydrochloric acid can be present in and leach in mixture with about 3M or the amount that is greater than about 3M.
Example with reference to being not used in below restriction object, is further described in more detail some embodiment.Example below provides the more details relevant to above-described embodiment.
Embodiment 1
Cutting element, each comprises the PCD thin slice that is attached to tungsten carbide substrate, the HPHT sintering by the diamond particle under cobalt exists forms.The gap area of the polycrystalline diamond thin slice of sintering between the diamond particles of combination contains cobalt.
Use comprises the solution that the total mol concentration of hydrochloric acid, nitric acid, phosphoric acid and sulfuric acid, leaching mixture is 4.60M, leach PCD thin slice, nitric acid, phosphoric acid and sulfuric acid are present in this leaching mixture with the volumetric molar concentration equating, and hydrochloric acid with than the larger volumetric molar concentration of other any mineral acid for example approximately 3M be present in this leaching mixture.
PCD thin slice is leached 15 hours at the temperature of Ore Leaching mixture boiling.
Now, by x-ray analysis, for the various piece of this PCD thin slice, determine the leaching degree of depth of this PCD thin slice.Discovery, after 15 hours, has obtained the average leaching degree of depth of 270 microns.
Use this leaching mixture, another identical PCD body of material is leached 25 hours altogether, and the various piece to this PCD thin slice, use x-ray analysis, again determine the leaching degree of depth of this PCD thin slice.Discovery, after 25 hours, has obtained the average leaching degree of depth of 450 microns.
Embodiment 2
Cutting element, each comprises the PCD thin slice that is attached to tungsten carbide substrate, the HPHT sintering by the diamond particle under cobalt exists forms.The gap area of the polycrystalline diamond thin slice of this sintering between the diamond particles of combination contains cobalt.
With the solution that the total mol concentration that comprises hydrochloric acid, nitric acid, phosphoric acid and sulfuric acid, leaching mixture is 4.87M, leach this PCD thin slice, nitric acid, phosphoric acid, perchloric acid and sulfuric acid are present in this leaching mixture with the volumetric molar concentration equating, and hydrochloric acid with than the larger volumetric molar concentration of other any mineral acid for example approximately 3M be present in this leaching mixture.
PCD thin slice is leached 10 hours at the temperature of this Ore Leaching mixture boiling.
Now, by x-ray analysis, the various piece to this PCD thin slice, determines the leaching degree of depth of this PCD thin slice.Discovery, after 10 hours, has obtained the average leaching degree of depth of 250 microns.
Use this leaching mixture, another identical PCD body of material is leached 33 hours altogether, and the various piece to this PCD thin slice, by x-ray analysis, again determine the leaching degree of depth of this PCD thin slice.Discovery, after 33 hours, has obtained the average leaching degree of depth of 600 microns.
When using traditional obtainable leaching degree of depth of infusion solution to compare, determine and comprise that the described embodiment of above-mentioned leaching mixture can make larger leaching efficiency become possibility, thereby can within the shorter time period, obtain the larger leaching degree of depth, for example, compare with traditional acid mixture that generally can leach identical PCD main body in 5 days, in 20 hours, obtained the leaching degree of depth of 585 microns.And, because this Ore Leaching mixture is less than the toxicity of the Nitrate-Based leaching mixture of other traditional HF-, thereby reduced the problem that health and safety is processed.
Explanation above is provided, has made those skilled in the art can utilize best all respects of the illustrated embodiment of example by herein.This explanation is not as exhaustive or be restricted to disclosed any precise forms.A lot of modifications and modification are possible.Particularly, although some embodiment of the method have been illustrated as being effective in the leaching PCD containing VC additive, but the method can be applied to have effective leaching of the PCD of other additive equally, such as, take other metallic carbide form, comprise one or more the effective leaching of PCD of additive in the carbide of tungsten, titanium, niobium, tantalum, zirconium, molybdenum or chromium.

Claims (10)

1. a processing has the polycrystalline diamond abrasive compact of the non-diamond phase that comprises diamond catalyst/solvent material, it is PCD material, method, described method comprises by the described PCD material of at least a portion is exposed to and leaches mixture and from described PCD material, leach a certain amount of diamond catalyst/solvent, described leaching mixture comprises hydrochloric acid and one or more other mineral acids, is greater than the volumetric molar concentration of described one or more other mineral acids in the volumetric molar concentration of hydrochloric acid described in described leaching mixture.
2. the method for claim 1, wherein described PCD is exposed to the step that leaches mixture and comprises described PCD is exposed to described leaching mixture, wherein said one or more other mineral acids comprise one or more in sulfuric acid, phosphoric acid, perchloric acid or nitric acid.
3. the method according to any one of the preceding claims, wherein said infusion solution comprises the hydrochloric acid with about 3M or larger volumetric molar concentration.
4. the method according to any one of the preceding claims, wherein said leaching mixture comprises the combination of two or more mineral acids except hydrochloric acid, the volumetric molar concentration of described two or more other mineral acids is substantially the same.
5. the method according to any one of the preceding claims, is further included in described PCD material is exposed in the step of described leaching mixture, described leaching mixture is heated to be equal to or higher than to the temperature of the boiling temperature of described leaching mixture.
6. the method according to any one of the preceding claims, wherein said metal solvent catalyzer comprises at least one in cobalt, nickel and iron.
7. the method according to any one of the preceding claims, wherein said PCD thin slice has the thickness from about 1.5mm to about 3.0mm.
8. the method according to any one of the preceding claims, wherein said leaching step comprises one or more in the carbide that leaches tungsten, titanium, niobium, tantalum, zirconium, molybdenum, chromium or vanadium from described PCD material.
9. the method according to any one of the preceding claims, wherein, for the average diamond particle size of approximately 10 microns, the leaching rate of described Ore Leaching mixture is about 10 microns per hour.
10. a processing has the polycrystalline diamond abrasive compact of the non-diamond phase that comprises diamond catalyst/solvent and/or one or more metallic carbide, it is PCD material, method, its substantially as in the accompanying drawings illustrated and by before the method for any one embodiment explanation.
CN201280070378.8A 2011-12-29 2012-12-20 Method of processing polycrystalline diamond material Pending CN104136641A (en)

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US201161581214P 2011-12-29 2011-12-29
US61/581,214 2011-12-29
GBGB1122434.2A GB201122434D0 (en) 2011-12-29 2011-12-29 Method of processing polycrystalline diamond material
GB1122434.2 2011-12-29
PCT/EP2012/076520 WO2013098217A1 (en) 2011-12-29 2012-12-20 Method of processing polycrystalline diamond material

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