CN104134427B - Image element circuit - Google Patents
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- CN104134427B CN104134427B CN201410382652.6A CN201410382652A CN104134427B CN 104134427 B CN104134427 B CN 104134427B CN 201410382652 A CN201410382652 A CN 201410382652A CN 104134427 B CN104134427 B CN 104134427B
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Abstract
A kind of image element circuit, comprises an energy-storage travelling wave tube, a driving transistor, a first transistor, a transistor seconds, a third transistor, one the 4th transistor and one the 5th transistor.First end of the first transistor is electrically connected with the first end of energy-storage travelling wave tube.First end of transistor seconds is in order to optionally to receive a data voltage or a pre-charge pressure.The grid of third transistor and the grid of transistor seconds are in order to receive scan signal.The grid of the 5th transistor and the grid of the 4th transistor are in order to receive a luminous enable signal.By the technological means of the present invention, under the situation that identical data voltage is provided, even if driving the critical voltage of transistor to produce skew, still can produce identical driving electric current and carrying out driven for emitting lights element.Consequently, it is possible to the phenomenon that display picture brightness is uneven can be improved.
Description
Technical field
The invention relates to a kind of image element circuit, and be applicable to organic light-emitting diodes in particular to one
The pixel-driving circuit of pipe.
Background technology
Flat display apparatus has that power consumption is low, caloric value is few and lightweight ... etc. advantage, the most by
It is widely used in various electronic product.Flat display apparatus according to its type of drive, typically can divide into by
Dynamic matrix form (passive matrix) and active matrix (active matrix) two kinds.Passive matrix type shows
Showing device is limited to its drive pattern, have the life-span shorter with cannot large area ... etc. shortcoming.And active-matrix
Although formula display device cost is costly and processing procedure is complex, but can meet large scale and high-res
Display demand.Therefore, active matrix display device has become the main flow of flat display apparatus.Wherein,
Active organic light-emitting diode (Organic Light-Emitting Diode, OLED) display device is near
One of product of Nian Laigejia manufacturer main development.
But, it is applied in the thin film transistor (TFT) of making active organic light-emitting diode display device, in order to
Drive the driving transistor of Organic Light Emitting Diode probably due to processing procedure, material or element characteristic are different ... etc.
Factor and cause the critical voltage (threshold voltage) of transistor to offset so that at identical data electricity
Under pressure drives, the driving electric current of the Organic Light Emitting Diode of each pixel has narrow difference.It addition, stream
Through Organic Light Emitting Diode electric current as well as power supply supply voltage by line resistance drop (IR-Drop)
Impact and change.Above-mentioned factor can cause the display picture of organic LED display device to have brightness not
Uniform phenomenon.
Summary of the invention
Therefore, an aspect of of the present present invention is to provide a kind of image element circuit.Described image element circuit comprises an energy storage
Element, a driving transistor, a first transistor, a transistor seconds and a third transistor.Drive
The grid of transistor is electrically connected with the first end of energy-storage travelling wave tube.First end of the first transistor and energy-storage travelling wave tube
First end be electrically connected with.The grid of the first transistor, the second end of the first transistor and driving transistor
First end be electrically connected with.First end of transistor seconds is in order to optionally to receive a data voltage or pre-
Charging voltage.Second end of transistor seconds is electrically connected with the second end of energy-storage travelling wave tube.The grid of third transistor
The grid of pole and transistor seconds is in order to receive scan signal.First end of third transistor and driving crystal
Second end of pipe is electrically connected with.Second end of third transistor is electrically connected with the first end of energy-storage travelling wave tube.In
One first stage, the current potential of the second end of energy-storage travelling wave tube is maintained at a reference voltage.In a second stage,
First end of transistor seconds is in order to receive pre-charge pressure.Transistor seconds and third transistor are according to scanning
Signal conduction so that energy-storage travelling wave tube is charged via transistor seconds mat pre-charge pressure, and the first transistor
Operation conducting corresponding to energy-storage travelling wave tube charging.
Another aspect of the present invention is to provide a kind of image element circuit.Described image element circuit comprises an energy storage unit
Part, a driving transistor, a first transistor, a transistor seconds, a third transistor, one the 4th crystalline substance
Body pipe and one the 5th transistor.The grid of transistor is driven to be electrically connected with the first end of energy-storage travelling wave tube.The
First end of one transistor is electrically connected with the first end of energy-storage travelling wave tube.The grid of the first transistor, the first crystalline substance
Second end of body pipe and the first end of driving transistor are electrically connected with.First end of transistor seconds is in order to select
Receive to selecting property a data voltage or a pre-charge pressure.Second end of transistor seconds and the second of energy-storage travelling wave tube
End is electrically connected with.The grid of third transistor and the grid of transistor seconds are in order to receive scan signal.The
First end of three transistors is electrically connected with the second end driving transistor.Second end of third transistor and storage
First end of energy element is electrically connected with.First end of the 4th transistor electrically connects with the second end of energy-storage travelling wave tube
Connect.Second end of the 4th transistor is electrically connected to a reference voltage.First end of the 5th transistor and driving
Second end of transistor is electrically connected with.The grid of the 5th transistor and the grid of the 4th transistor are in order to receive one
Luminous enable signal.
By the technological means of the present invention, the driving electric current luminous due to driven for emitting lights element and driving transistor
Critical voltage unrelated, under the situation providing identical data voltage, even if driving the critical electricity of transistor
Pressure produces skew, still can produce identical driving electric current by image element circuit proposed by the invention and drive
Dynamic light-emitting component.Thus, it is possible to resolve driving transistor in image element circuit is probably due to processing procedure, material
Or element characteristic is different ... etc. factor and cause the problem that critical voltage offsets, and organic can be improved whereby
The display uneven phenomenon of picture brightness of optical diode display device.
Further, since the driving electric current of driven for emitting lights element luminescence is unrelated with supply voltage, it is possible to resolve in difference
Pixel under, supply voltage cause because of line resistance drop (IR-Drop) driving electric current inconsistent
Situation.Consequently, it is possible to the picture homogeneous degree of the high-res panel using a large amount of pixels can effectively be promoted.
Furthermore, image element circuit proposed by the invention only needs to use two to drive signal, therefore can provide more
The pixel wiring space that the pixel compensation circuit known is bigger, and the aperture opening ratio (aperture of display device can be improved
ratio).Consequently, it is possible to can be more prone to reach high-res and the face of narrow frame (slim border)
The demand of plate, and the life-span of light-emitting component can be promoted further.
Accompanying drawing explanation
Fig. 1 is in one embodiment of the invention, the circuit diagram of a kind of image element circuit；
Fig. 2 A is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a first stage
Figure；
Fig. 2 B is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a first stage
Schematic diagram；
Fig. 3 A is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a second stage
Figure；
Fig. 3 B is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a second stage
Schematic diagram；
Fig. 4 A is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a phase III
Figure；
Fig. 4 B is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a phase III
Schematic diagram；
Fig. 5 A is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a fourth stage
Figure；
Fig. 5 B is according to one embodiment of the invention, drives the signal of image element circuit when being illustrated in a fourth stage
Schematic diagram；
Fig. 6 is in one embodiment of the invention, the circuit diagram of a kind of image element circuit；
Fig. 7 is in one embodiment of the invention, the circuit diagram of a kind of image element circuit；
Fig. 8 is in one embodiment of the invention, the circuit diagram of a kind of image element circuit.
Detailed description of the invention
It is hereafter to coordinate appended accompanying drawing to elaborate for embodiment, but the embodiment provided be not used to limit
The scope that the present invention processed is contained, and the description of structure operation is not used to limit its order performed, Ren Heyou
The structure that element reconfigures, is produced the device with impartial effect, is all the scope that the present invention is contained.
Additionally, accompanying drawing is the most for the purpose of description, and map not according to life size.For making to readily appreciate, the description below
Middle similar elements will illustrate with identical symbology.
In the word (terms) that full piece description and claims are used, in addition to having and indicating especially,
Be generally of each word use in this area, in the content that discloses at this with the usual meaning in special content
Justice.Some is in order to describe the word of the present invention by lower or discuss in the other places of this description, to provide ability
The guiding that field technique personnel are extra in description for the present invention.
It addition, about " coupling " used herein or " connection ", two or multiple element phases all can be referred to
Directly make entity or in electrical contact mutually, or mutually indirectly put into effect body or in electrical contact, be also referred to as two or multiple
Element mutual operation or action.
In this article, unless be particularly limited to for article in interior literary composition, otherwise " one " can be general with " being somebody's turn to do "
Refer to single one or more.It will be further appreciated that, " comprising " used herein, " including ",
" have " and similar vocabulary, indicate its described feature, region, integer, step, operation, element
And/or assembly, but be not excluded for its described or extra one or more further feature, region, integer,
Step, operation, element, assembly, and/or group therein.
It addition, in this article, the vocabulary of use first, second and the 3rd etc., is for describing various unit
Part, assembly, region, layer and/or block be it is understood that.But these elements, assembly, region,
Layer and/or block should not be limited by these terms.These vocabulary be only limited to for distinguish single element,
Assembly, region, layer and/or block.Therefore, one first element hereinafter, assembly, region, layer
And/or block is also referred to as the second element, assembly, region, layer and/or block, without deviating from the present invention
Original idea.
Refer to Fig. 1.Fig. 1 is in one embodiment of the invention, the circuit diagram of a kind of image element circuit 100.
Image element circuit 100 comprise an energy-storage travelling wave tube Cst, one drive transistor TD, a first transistor T1,
One transistor seconds T2, third transistor T3, one the 4th transistor T4 and one the 5th transistor T5.
The grid driving transistor TD is electrically connected with energy-storage travelling wave tube Cst.In an embodiment, energy storage unit
Part Cst is an electric capacity, and drives the grid of transistor TD to be electrically connected with first end of energy-storage travelling wave tube Cst
In end points E.First end of the first transistor T1 and first end of energy-storage travelling wave tube Cst are electrically connected at end points E,
And second end of the grid of the first transistor T1, the first transistor T1 and the first of driving transistor TD
End is electrically connected at end points F, and receives a supply voltage OVDD from end points F.Transistor seconds T2's
First end is in order to optionally to receive a data voltage or a pre-charge pressure from terminal A.In an embodiment,
The level of above-mentioned pre-charge pressure is higher than the level of above-mentioned data voltage, and above-mentioned data voltage may be from a number
Output according to drive circuit (not illustrating).The of second end of transistor seconds T2 and energy-storage travelling wave tube Cst
Two ends are electrically connected at end points D.The grid of the grid of third transistor T3 and transistor seconds T2 in order to
Scan signal is received from terminal B.First end of third transistor T3 and the second of driving transistor TD
End is electrically connected with.Second end of third transistor T3 and first end of energy-storage travelling wave tube Cst are electrically connected at end
Point E.First end of the 4th transistor T4 and second end of energy-storage travelling wave tube Cst are electrically connected at end points D.
Second end of the 4th transistor T4 is electrically connected to a reference voltage Vref.The first of 5th transistor T5
End is electrically connected with the second end driving transistor TD.The grid of the 5th transistor T5 and the 4th transistor
The grid of T4 is in order to receive a luminous enable signal from end points C.In the present embodiment, image element circuit 100
Also comprise a light-emitting component 110.Second end of light-emitting component 110 and the 5th transistor T5 is electrically connected with.
In an embodiment, light-emitting component 110 is an Organic Light Emitting Diode (Organic Light Emitting
Diode, OLED), the anode of this Organic Light Emitting Diode and second end of the 5th transistor T5 electrically connect
Connect, and the negative electrode of this Organic Light Emitting Diode is connected to Dc bias OVSS.
It addition, in an embodiment, drive transistor TD, the first transistor T1, transistor seconds T2,
Third transistor T3, the 4th transistor T4 and the 5th transistor T5 are all P-type transistor, and above-mentioned
The source electrode that first end is P-type transistor (Source) of transistor, the second end of above-mentioned transistor is p-type
The drain electrode (Drain) of transistor.
Figure 2 below A, Fig. 2 B, Fig. 3 A, Fig. 3 B, Fig. 4 A, Fig. 4 B, Fig. 5 A and Fig. 5 B are to use
Operating process with pixels illustrated circuit 100.Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A are to paint respectively
When being shown in different phase, drive the schematic diagram of image element circuit 100.Fig. 2 B, Fig. 3 B, Fig. 4 B and figure
When 5B is to illustrate respectively corresponding to Fig. 2 A, Fig. 3 A, Fig. 4 A and the stage shown in Fig. 5 A, in order to drive
The signal schematic representation of dynamic image element circuit 100.In Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A, end points
A respectively in order to receive the signal 120 in Fig. 2 B, Fig. 3 B, Fig. 4 B, Fig. 5 B, terminal B respectively in order to
Receive the scanning signal SCAN, end points C in Fig. 2 B, Fig. 3 B, Fig. 4 B, Fig. 5 B respectively in order to receive
Luminous enable signal EM in Fig. 2 B, Fig. 3 B, Fig. 4 B, Fig. 5 B.And Fig. 2 B, Fig. 3 B, Fig. 4 B,
Voltage Vg in Fig. 5 B is in respectively Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A, drives transistor
The grid voltage of TD.It addition, in Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A, the crystalline substance of dotted portion
Body pipe is to represent this transistor and do not turn on.
As shown in Figure 2A and 2B, before the first stage L1 driving image element circuit 100 starts,
The luminous enable signal EM that end points C is received is in low level voltage.Therefore, the 4th transistor T4
Conducting, the current potential of second end of energy-storage travelling wave tube Cst is via the 4th transistor T4, is maintained in end points D
In reference voltage Vref.And when first stage L1, the luminous enable signal EM that end points C is received by
Low level voltage transition is high-level voltage.Therefore, the 4th transistor T4 and the 5th transistor T5 depends on
Close according to luminous enable signal EM, and the current potential of second end of energy-storage travelling wave tube Cst is still tieed up in end points D
Hold in reference voltage Vref.Further, since the scanning signal SCAN that terminal B is received has a high position
Quasi-voltage, therefore transistor seconds T2 and third transistor T3 do not turn on.And terminal A is received
Signal 120 be maintained at a pre-charge pressure Vpre.
Refer to shown in Fig. 3 A and Fig. 3 B, in time driving second stage L2 of image element circuit 100,
The scanning signal SCAN that terminal B is received is low level voltage by high-level voltage transition.Second crystal
Pipe T2 and third transistor T3 are according to scanning signal SCAN conducting.Owing to transistor seconds T2 is led
Logical, the pre-charge pressure Vpre that energy-storage travelling wave tube Cst is had by terminal A via transistor seconds T2 enters
Row charging.Wherein, the current potential (i.e. the current potential of end points D) of second end of energy-storage travelling wave tube Cst is by reference voltage
Vref is charged to pre-charge pressure Vpre.Due to the feedthrough effect (feed-through effect) of electric capacity, storage
Can element Cst the first end current potential (i.e. the current potential of end points E) also with rising.Therefore, transistor
T1 is switched on, and as shown in the dotted arrow direction in Fig. 3 A, energy-storage travelling wave tube Cst is via the first transistor
T1 discharges.The potential value (i.e. the potential value of end points E) of first end of energy-storage travelling wave tube Cst will be discharged to
About OVDD+ | Vth |, wherein Vth is the critical voltage (threshold voltage) driving transistor TD.
Then, refer to shown in Fig. 4 A and Fig. 4 B, in the phase III driving image element circuit 100
During L3, terminal A received signal 120 is dropped to a data voltage Vdata by pre-charge pressure Vpre.
Therefore, the current potential (i.e. the current potential of end points D) of second end of energy-storage travelling wave tube Cst passes through transistor seconds T2,
It is discharged to data voltage Vdata by pre-charge pressure Vpre.Due to the feedthrough effect of electric capacity, energy-storage travelling wave tube
The current potential (i.e. the current potential of end points E) of first end of Cst also with decline.Therefore, transistor T1 is closed
Close, and owing to driving the grid potential of transistor TD to be decreased below OVDD-| Vth |, drive transistor
TD turns on.As shown in the dotted arrow direction in Fig. 4 A, energy-storage travelling wave tube Cst is via through driving crystal
Pipe TD and third transistor T3 are charged by supplying voltage OVDD so that energy-storage travelling wave tube Cst's
The potential value (i.e. the potential value of end points E) of the first end is charged to operation voltage OVDD-a | Vth |.
Refer to shown in Fig. 5 A and Fig. 5 B, in driving fourth stage L4 of image element circuit 100 (i.e.
The display stage) time, the scanning signal SCAN that terminal B is received is high levels by low level voltage transition
Voltage, and the luminous enable signal EM that end points C is received is low level voltage by high-level voltage transition.
Transistor seconds T2 and third transistor T3 are closed according to scanning signal SCAN, the 4th transistor T4
And the luminous enable signal EM conducting of the 5th transistor T5 foundation.The electricity of second end of energy-storage travelling wave tube Cst
Position (i.e. the current potential of end points D), by the 4th transistor T4, is discharged to reference by data voltage Vdata
Voltage Vref.Due to the feedthrough effect of electric capacity, the current potential of first end of energy-storage travelling wave tube Cst be (i.e. end points E's
Current potential) also with fall to approximately OVDD-| Vth |-Vdata+Vref, therefore, drive transistor TD conducting.
Owing to driving transistor TD and the 5th transistor T5 to be both turned on so that light-emitting component 110 is via driving
Transistor TD and the 5th transistor T5 is supplied voltage OVDD and is driven and luminous.Wherein, drive
The electric current that drives of light-emitting component 110 luminescence is the driving electric current driving second end of transistor TD to be exported
Id.Driving electric current Id is to be determined by following mathematical expression:
Id=K* (Vs-Vg-| Vth |) ^2
=K* (OVDD-(OVDD-| Vth |-Vdata+Vref)-| Vth |) ^2
=K* (Vdata-Vref) ^2
Wherein, K is the current constant driving transistor TD, and Vs is the first end driving transistor TD
Current potential, Vg is the current potential (i.e. the current potential of end points E) of the grid driving transistor TD.By above-mentioned formula
Understanding, the present invention optionally receives data electricity from terminal A by utilizing first end of transistor seconds T2
Pressure or pre-charge pressure, and utilize the feedthrough effect of electric capacity so that in time showing the stage, driven for emitting lights element
The driving electric current Id of 110 luminescences is only relevant with data voltage Vdata and reference voltage Vref.Drive electricity
Stream Id with drive transistor TD critical voltage Vth unrelated, drive electric current Id also with supply voltage OVDD
Unrelated.
It should be noted that, the image element circuit 100 shown in above-mentioned Fig. 1 to Fig. 5 B is only a demonstration of the present invention
Property embodiment, and not with limit the present invention.Such as, although in image element circuit 100, each transistor is all
Use P-type transistor to implement, but one skilled in the art can follow above-mentioned one exemplary embodiment
Teachings and analogize/deduce to change and use the variant implemented of N-type transistor, therefore without departing from
In the spirit and scope of the present invention, the embodiment of these modification is also when belonging to the model that the present invention to be protected
Farmland.It addition, Fig. 6 to Fig. 8 is the variant illustrating image element circuit proposed by the invention respectively.
In the image element circuit 600 shown in Fig. 6, end points I is to receive such as institute in Fig. 2 B to Fig. 5 B
The signal 120 shown, end points J is to receive the scanning signal SCAN as shown in Fig. 2 B to Fig. 5 B,
End points K is to receive the luminous enable signal EM as shown in Fig. 2 B to Fig. 5 B.Image element circuit 600
Operation similar with the image element circuit 100 shown in Fig. 1 to 5B, therefore do not repeat them here.
In the image element circuit 700 shown in Fig. 7, end points L is to receive such as institute in Fig. 2 B to Fig. 5 B
The signal 120 shown, end points M is to receive the scanning signal SCAN as shown in Fig. 2 B to Fig. 5 B,
End points N is to receive the luminous enable signal EM as shown in Fig. 2 B to Fig. 5 B.Image element circuit 700
Operation similar with the image element circuit 100 shown in Fig. 1 to Fig. 5 B, therefore do not repeat them here.
In the image element circuit 800 shown in Fig. 8, end points P is to receive such as institute in Fig. 2 B to Fig. 5 B
The signal 120 shown, end points Q is to receive the scanning signal SCAN as shown in Fig. 2 B to Fig. 5 B,
End points R is to receive the luminous enable signal EM as shown in Fig. 2 B to Fig. 5 B.Image element circuit 800
Operation similar with the image element circuit 100 shown in Fig. 1 to Fig. 5 B, therefore do not repeat them here.
In sum, by the technological means of the present invention, due to the luminous driving electric current of driven for emitting lights element with
The critical voltage driving transistor is unrelated, under the situation providing identical data voltage, even if driving crystal
The critical voltage of pipe produces skew, still can produce identical driving by image element circuit proposed by the invention
Streaming current carrys out driven for emitting lights element.Thus, it is possible to resolve driving transistor in image element circuit probably due to
Processing procedure, material or element characteristic are different ... etc. factor and cause the problem that critical voltage offsets, and can be whereby
Improve the phenomenon that the display picture brightness of organic LED display device is uneven.
Further, since the driving electric current of driven for emitting lights element luminescence is unrelated with supply voltage OVDD, can solve
Certainly under different pixels, the driving electric current that supply voltage causes because of line resistance drop (IR-Drop)
Inconsistent situation.Consequently, it is possible to the picture that can effectively promote the high-res panel using a large amount of pixels is equal
Evenness.
Furthermore, image element circuit proposed by the invention only needs to use two to drive signal, therefore can provide bigger
Pixel wiring space, and the aperture opening ratio (aperture ratio) of display device can be improved.Consequently, it is possible to
Can be more prone to reach the demand of the panel of high-res and narrow frame (slim border), and one can be entered
Step promotes the life-span of light-emitting component.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any familiar
This those skilled in the art, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations, therefore
Protection scope of the present invention is when being defined in the range of standard depending on appending claims.
Claims (6)
1. an image element circuit, it is characterised in that comprise:
One energy-storage travelling wave tube；
One drives transistor, the grid of this driving transistor to be electrically connected with the first end of this energy-storage travelling wave tube；
One the first transistor, the first end of this first transistor is electrically connected with the first end of this energy-storage travelling wave tube,
First end of the grid of this first transistor, the second end of this first transistor and this driving transistor is electrical
Connect；
One transistor seconds, the first end of this transistor seconds is in order to optionally to receive a data voltage or
Pre-charge pressure, the second end of this transistor seconds is electrically connected with the second end of this energy-storage travelling wave tube；And
One third transistor, the grid of this third transistor sweeps in order to receive with the grid of this transistor seconds
Retouching signal, the second end of the first end of this third transistor and this driving transistor is electrically connected with, and this is the trimorphism
Second end of body pipe is electrically connected with the first end of this energy-storage travelling wave tube；
Wherein in a first stage, the current potential of the second end of this energy-storage travelling wave tube is maintained at a reference voltage；
In a second stage, the first end of this transistor seconds in order to receive this pre-charge pressure, this second crystal
Pipe and this third transistor are according to this scanning signal conduction so that this energy-storage travelling wave tube is via this transistor seconds
It is charged by this pre-charge pressure, and the operation that this first transistor charges corresponding to this energy-storage travelling wave tube is led
Logical.
Image element circuit the most according to claim 1, it is characterised in that in a phase III, this is second years old
First end of transistor is in order to receive this data voltage, and the second end of this energy-storage travelling wave tube is via this transistor seconds
It is discharged to this data voltage.
Image element circuit the most according to claim 2, it is characterised in that in this phase III, this driving
Transistor turns, and this energy-storage travelling wave tube is more electric by a supply through this driving transistor and this third transistor
Pressure is charged so that the first end of this energy-storage travelling wave tube is charged to an operation voltage.
Image element circuit the most according to claim 2, it is characterised in that also comprise:
One the 4th transistor, the first end of the 4th transistor is electrically connected with the second end of this energy-storage travelling wave tube,
Second end of the 4th transistor is electrically connected to this reference voltage；And
One the 5th transistor, the first end of the 5th transistor electrically connects with the second end of this driving transistor
Connecing, the grid of the 5th transistor and the grid of the 4th transistor, should in order to receive a luminous enable signal
Second end of the 5th transistor is for electrically connecting to a light-emitting component；
Wherein in a fourth stage, this transistor seconds and this third transistor are closed according to this scanning signal
Closing, the 4th transistor and the 5th transistor are according to this luminescence enable signal conduction, and this energy-storage travelling wave tube
The second end be discharged to this reference voltage via the 4th transistor.
Image element circuit the most according to claim 4, it is characterised in that in this fourth stage, this driving
Transistor AND gate the 5th transistor is both turned on so that this light-emitting component is via this driving transistor and the 5th
Transistor is driven and luminous by a supply voltage.
6. according to the image element circuit that in claim 1 to 5, any one is described, it is characterised in that this precharge
The level of pressure is higher than the level of this data voltage.
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| CN201410382652.6A CN104134427B (en) | 2014-08-06 | 2014-08-06 | Image element circuit |
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|---|---|---|---|
| CN201410382652.6A CN104134427B (en) | 2014-08-06 | 2014-08-06 | Image element circuit |
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| CN104134427B true CN104134427B (en) | 2016-08-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI537924B (en) | 2014-09-01 | 2016-06-11 | 友達光電股份有限公司 | Driving method of light emitting diode |
| CN104318899B (en) | 2014-11-17 | 2017-01-25 | 京东方科技集团股份有限公司 | Pixel unit driving circuit and method, pixel unit and display device |
| CN105702198B (en) * | 2014-11-26 | 2019-01-04 | 鸿富锦精密工业（深圳）有限公司 | Pixel unit and its driving method |
| US9888185B1 (en) * | 2016-12-20 | 2018-02-06 | Omnivision Technologies, Inc. | Row decoder for high dynamic range image sensor using in-frame multi-bit exposure control |
| TWI635477B (en) * | 2017-11-28 | 2018-09-11 | 友達光電股份有限公司 | Pixel circuit |
| CN111540315B (en) * | 2020-02-21 | 2024-03-15 | 福州京东方光电科技有限公司 | Pixel driving circuit, driving method thereof and display device |
| CN113160752A (en) * | 2021-04-25 | 2021-07-23 | 南华大学 | Pixel circuit, driving method thereof and display device |
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| CN104134427A (en) | 2014-11-05 |
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