CN104133774A - Method of managing non-volatile memory and non-volatile storage device thereof - Google Patents
Method of managing non-volatile memory and non-volatile storage device thereof Download PDFInfo
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Abstract
The invention discloses a method of managing a non-volatile memory and a non-volatile storage device thereof. The non-volatile memory comprises a plurality of memory blocks; and each of the plurality of memory blocks includes a plurality of memory pages. The method includes the steps of partitioning a memory page among the plurality of memory pages into a plurality of clusters; and writing data and a mapping information corresponding to the data into different clusters of the plurality of clusters.
Description
Technical field
The present invention relates to a kind of method and Nonvolatile memory devices thereof of managing non-volatile memory, relate in particular to a kind of can be in the operation of write-once one memory page method and the Nonvolatile memory devices thereof of the managing non-volatile memory of data writing and map information simultaneously.
Background technology
For general Nonvolatile memory devices, main frame normally be take section (Sector) and nonvolatile memory is managed as unit, and the minimum unit of writing of nonvolatile memory determines according to the size of a memory page (Memory Page).Traditionally, the size of a section can be designed to be equal to the size of a memory page, the write efficiency while making page mapping can reach maximum.When main frame wish is during by the data write non-volatile memory of a sector sizes, the mode that these data can be shone upon by page writes a complete memory page, and does not waste any space in memory page.
In recent years, along with the height requirement of people to storage space, the size of nonvolatile memory constantly increases, and the size of memory page also increases thereupon, yet the size of section does not but have significant change.In the case, when in a memory page, the data wish of a sector sizes is upgraded, the more new data of this section must write a new memory page, in new memory page, other unnecessary memory space must be filled up other data in former memory page, thereby causes the low of the waste of storage space and write efficiency.For instance, please refer to Fig. 1, Fig. 1 is the schematic diagram that user data D1 writes a memory page P1.If the size of user data D1 equals 4kB, the size of memory page P1 equals 16kB, when main frame wish writes memory page P1 by a Memory Controller by user data D1, user data D1 can occupy the space of 4kB in memory page P1, the memory space of other 12kB must be used for storing other data, thereby causes the waste of this 12kB storage space.In addition, due to the complete memory page size (16kB) of the necessary write-once of Memory Controller, but only have the data of 4kB to write, so procedure operation can additionally take the 12kB bandwidth of Memory Controller.In the case, write efficiency can significantly reduce.
In general nonvolatile memory, data can be written into a memory page in write-once operation, and these data may be a user data (User Data), a map information (Mapping Information), garbage reclamation (Garbage Collection) data or average read-write memory block (Wear-Leveling) data etc. corresponding to user data.In these data, dissimilar data can write different memory pages.For instance, when the user data of a sector sizes is wanted write non-volatile memory, map information corresponding to this user data must upgrade thereupon, makes system must distribute at least two memory pages to process this user data (a memory page processes user data and another memory page are processed map information).In the case, in the memory page at storage user data, may produce waste, system also must be upgraded map information by another write operation.Therefore, the write efficiency of Memory Controller cannot use efficiently.In view of this, known technology has improved necessity in fact.
Summary of the invention
Therefore, fundamental purpose of the present invention be to provide a kind of can be in the operation of write-once one memory page the method for the managing non-volatile memory of data writing and map information simultaneously.
The present invention discloses the method for a kind of management one nonvolatile memory, and this nonvolatile memory includes a plurality of storage blocks, and wherein each storage block includes a plurality of memory pages.The method includes a memory page in the plurality of memory page is divided into a plurality of groups; And write different groups in the plurality of group by data and corresponding to a map information of these data.
The present invention also discloses a kind of Nonvolatile memory devices, includes a nonvolatile memory, includes a plurality of storage blocks, and wherein each storage block includes a plurality of memory pages; And a Memory Controller, be coupled to this nonvolatile memory.This Memory Controller, by carrying out following steps, manages this nonvolatile memory: a memory page in the plurality of memory page is divided into a plurality of groups; And write different groups in the plurality of group by data and corresponding to a map information of these data.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that data write a memory page.
Fig. 2 is the schematic diagram that the embodiment of the present invention one Nonvolatile memory devices is controlled by a main frame.
Fig. 3 is the schematic diagram of the embodiment of the present invention one memory page.
Fig. 4 is the schematic diagram of embodiment of the present invention memory page.
Fig. 5 is the schematic diagram of the super page of the embodiment of the present invention.
Fig. 6 is the schematic diagram that the super page of the embodiment of the present invention one backs up.
Fig. 7 is the schematic diagram of the super page of the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
20 Nonvolatile memory devices
210 Memory Controllers
220 nonvolatile memories
250 main frames
P1, P3, P41, P42, P50～P53, P60, memory page
P61、P70～P77
P5A, P5B, P6, P7A, the super page of P7B
PL0～PL3 aspect
D1～D7, UD user data
M1～M4, MI map information
GC1～GC9, GC garbage reclamation data
WL1, WL average read-write memory block data
Embodiment
Please refer to Fig. 2, Fig. 2 is the schematic diagram that the embodiment of the present invention one Nonvolatile memory devices 20 is controlled by a main frame 250.As shown in Figure 2, Nonvolatile memory devices 20 includes a Memory Controller 210 and a nonvolatile memory 220.Nonvolatile memory 220 is comprised of a plurality of storage blocks (Memory Block), and wherein each storage block is comprised of a plurality of memory pages (Memory Page).Nonvolatile memory 220 can be the nonvolatile memory of a Sheffer stroke gate flash memory (NAND Flash Memory) or other type.Memory Controller 210 can be used to managing non-volatile memory 220.Memory Controller 210 can communicate with main frame 250, and main frame 250 can be read or data writing by Memory Controller 210 on nonvolatile memory 220.In data, write in flow process, main frame 250 carrys out management data by logical memory space, and 210 of Memory Controllers are used for logical memory space to map to an amount of physical memory of nonvolatile memory 220, to carry out data management.
In known technology, when the data (4kB) of a sector sizes want to write a memory page (16kB), the bandwidth resources that can waste Memory Controller 210, and in nonvolatile memory 220, unnecessary storage space must be used for storing other data.On the other hand, when the size of a memory page equals sector sizes, it is maximum that efficiency can reach.Therefore, need to one memory page be cut into a plurality of groups according to sector sizes, the data of a sector sizes can be stored in a group.In the case, the physical address of memory page is to take group size to map to logical address as unit.For instance, if the size of a memory page equals 16kB, one sector sizes equals 4kB, and preferably, memory page may be partitioned into 4 groups, makes the data of each section can be stored in a complete group.In memory page, a physics group maps to a logical group.Thus, each group all can be used to store the data of a sector sizes, and does not waste any storage space.
In order effectively to use the bandwidth of storage space and Memory Controller 210, the group in each memory page all must storage active data.In part embodiment, when write operation each time, the User Data Length of wanting to write may not can equal 4 sector sizes.If while only having the user data wish storage of 2 sector sizes, only having 2 groups in memory page is that user data is shared.In the case, other 2 groups can be used to store other data, such as map information, garbage reclamation data or average read-write memory block data etc.Therefore the data that, write in same memory page can comprise as dissimilar data such as user data, map information, garbage reclamation data and average read-write memory block data.Thus, dissimilar data can write a memory page in write-once operation simultaneously.
For instance, please refer to Fig. 3, Fig. 3 is the schematic diagram of the embodiment of the present invention one memory page P3.As shown in Figure 3, the user data D2～D4 of 3 sector sizes wants to write memory page P3.Because the size of memory page P3 equals 16kB and section length equals 4kB, memory page P3 can be cut into 4 groups.In memory page P3,3 groups are for storing user data D2～D4, and another group can be used to Storage Mapping information M1.In other words, user data D2～D4 and map information M1 can write the different groups in memory page P3 in write-once operation simultaneously.
In general, map information M1 has recorded the information that the logical address that is relevant to user data D2～D4 maps to the physical address of corresponding group in memory page P3.Map information M1 also can comprise the information that is relevant to physical address map to logical address.In part embodiment, map information M1 includes and is relevant to the physical address map of memory page P3 to the information of the logical address of user data D2～D4.In part embodiment, controller can utilize these map informations, as logical address maps to physical address and physical address map to the information of logical address, carries out garbage reclamation and/or average read-write memory block function.
It should be noted that when being stored in the map information of a particular memory page while including the map information that is relevant to data that other group stores in this particular memory page, these data map information corresponding thereto can upgrade in write-once operation simultaneously.In the case, the management of power interruption recovering (Power-off Recovery, POR) can be more prone to.In a known nonvolatile memory, data and corresponding map information thereof must be distinguished write non-volatile memory.Once it is unexpected that power-off occurs, whether Memory Controller must upgrade and whether corresponding map information is more newly arrived and carried out power interruption recovering according to data.In comparison, in the nonvolatile memory of the above embodiment of the present invention, data and corresponding map information can write different groups in write-once operation simultaneously.In the case, when generation power-off surprisingly must be carried out power interruption recovering, above-mentioned situation can be reduced to: whether data and corresponding map information have upgraded; That is data and corresponding map information thereof will inevitably upgrade at one time, significantly reduction system is carried out the complexity of power interruption recovering.
In part embodiment, the user data that may only have a sector sizes is wanted to be stored in nonvolatile memory, and corresponding map information also must upgrade thereupon.Please refer to Fig. 4, Fig. 4 is the schematic diagram of embodiment of the present invention memory page P41 and P42.As shown in Figure 4, the user data D5 of a sector sizes and corresponding map information M2 thereof want to write in memory page P41.Because the size of memory page P41 equals 16kB and section length equals 4kB, memory page P41 can be cut into 4 groups.Yet the data that write memory page P41 only comprise a user data D5 and corresponding map information M2 thereof, these data only take 2 groups in memory page P41, and other 2 groups are unnecessary.For effectively utilizing the storage space of memory page P41, these 2 groups can be used to store garbage reclamation data or average read-write memory block data.As shown in Figure 4, average read-write memory block data W L1 and the user data D5 of the garbage reclamation data GC1 of one sector sizes and a sector sizes write in memory page P41 simultaneously, and map information M2 also can comprise the map information corresponding to garbage reclamation data GC1 and average read-write memory block data W L1 simultaneously.
It should be noted that the size of data of wanting to insert group also may be greater than group size, so data must be stored in more than one group, as shown in the memory page P42 in Fig. 4.The user data D6 of one sector sizes and corresponding map information M3 thereof write in memory page P42 simultaneously.The size of memory page P42 also equals 16kB and is divided into 4 groups.In memory page P42,2 groups are used for respectively storing user data D6 and map information M3, and other 2 groups all can be used to store garbage reclamation data GC2.For example, if (equal 8kB) when the size of garbage reclamation data GC2 is greater than 4kB, garbage reclamation data GC2 can insert these 2 groups in memory page P42, and the space of memory page P42 can effectively be used, and the efficiency of Memory Controller also can reach optimization.
For general nonvolatile memory, garbage reclamation is before the storage block of erasing, valid data in this storage block are moved to the memory page to another storage block from a memory page, average read-write memory block is that a kind of data configuration method makes erasing of data and write to be dispersed in nonvolatile memory by average mark, and then extends the life-span of nonvolatile memory.In known nonvolatile memory, the data that is relevant to garbage reclamation and the running of average read-write memory block all must be processed respectively.In comparison, in the above embodiment of the present invention, because a memory page is cut into a plurality of groups, and each physics group all can map to a logical group, so garbage reclamation data and average read-write memory block data can write the different groups in a memory page simultaneously.As shown in the memory page P41 of Fig. 4, after 2 groups insert respectively user data D5 and map information M2, other 2 groups can be used to store garbage reclamation data GC1 and average read-write memory block data W L1, make Memory Controller can carry out the running of garbage reclamation and average read-write memory block, and the work that this garbage reclamation and the average read-write memory block default wish that is previous system is carried out after a time.Thus, the efficiency of can elevator system carrying out garbage reclamation and average read-write memory block.
It should be noted that above-described embodiment also can be applicable to the situation that stage construction writes (Multi-Plane Programming).In part embodiment, in the different storage blocks of different aspects (Plane), several memory pages can be combined into a super page (Super Page).Please refer to Fig. 5, Fig. 5 is the schematic diagram of the embodiment of the present invention super page P5A and P5B.As shown in Figure 5, super page P5A is comprised of memory page P50 and P51, and wherein memory page P50 is positioned at an aspect PL0 and memory page P51 is positioned at an aspect PL1.The size of each memory page equals 8kB, and main frame is used for the section unit of managing non-volatile memory, equals 4kB, so each memory page P50 and P51 may be partitioned into 2 groups.In write-once operation, data can write memory page P50 and the P51 in super page P5 simultaneously, therefore the data of 4 sector sizes can completely write super page, wherein, the data that write can be map information MI, user data UD, garbage reclamation data GC or average read-write memory block data W L, as shown in the super page P5A of Fig. 5.
Similarly, when size of data is greater than group size, must store data with more than one group, as shown in super page P5B.Super page P5B is comprised of memory page P52 and P53, and wherein memory page P52 is positioned at aspect PL0 and memory page P53 is positioned at aspect PL1.The size of each memory page equals 8kB, and main frame is used for the section unit of managing non-volatile memory, equals 4kB, so each memory page P52 and P53 may be partitioned into 2 groups.Map information and user data are stored in respectively a group of memory page P52.The size of garbage reclamation data GC3 equals 8kB, therefore must take 2 groups in super page P5B.As shown in Figure 5,2 of memory page P53 groups are all used for storing garbage reclamation data GC3.
In being applied to the embodiment of super page, in super page, between different memory pages, can back up.Please refer to Fig. 6, Fig. 6 is the schematic diagram that one super page of P6 of the embodiment of the present invention backs up.As shown in Figure 6, super page P6 is comprised of memory page P60 and P61, and wherein memory page P60 is positioned at aspect PL0 and memory page P61 is positioned at aspect PL1.The size of each memory page equals 8kB, and main frame is used for the section unit of managing non-volatile memory, equals 4kB, so each memory page P60 and P61 may be partitioned into 2 groups.When user data D7 wants to write super page P6, user data D7 can write in memory page P60 and P61, to back up simultaneously.Map information M4 corresponding to user data D7 also can upgrade simultaneously in memory page P60 and P61.In the case, in super page P6, all groups can both effectively use, and do not waste any space in memory page, also do not waste the bandwidth resources of Memory Controller.
In known Nonvolatile memory system, when user data is wanted write non-volatile memory, conventionally can in the register of main frame, retain user data to back up, until the action writing completes.In the case, in data during writing, data must continue to be stored in register.In comparison, if user data writes 2 memory pages in write-once operation simultaneously, wherein a memory page can be considered backup.In the case, the register of main frame can discharge after having ordered under Memory Controller at main frame, can significantly reduce required register space size.
Please refer to Fig. 7, Fig. 7 is the schematic diagram of the embodiment of the present invention super page P7A and P7B.As shown in Figure 7, super page P7A and P7B have 4 deck structure.Super page P7A includes 4 memory page P70～P73, lays respectively at aspect PL0～PL3, and super page P7B includes 4 memory page P74～P77, lays respectively at aspect PL0～PL3.The size of each memory page all equals 8kB, and main frame is used for the section unit of managing non-volatile memory, equals 4kB, so each memory page P70～P77 may be partitioned into 2 groups, and wherein each group size equals 4kB.Even if only have a user data to want to be stored in super page P7A or P7B, make in super page P7A or P7B to only have group's storage user data, other group all can be used to fill up garbage reclamation data and corresponding map information.In super page P7A, the size of garbage reclamation data GC4 equals 8kB and takies 2 groups of memory page P72, and the size of garbage reclamation data GC5 equals 8kB and takies 2 groups of memory page P73.Because map information is simultaneously corresponding to user data and garbage reclamation data GC4 and GC5, therefore, map information also may need to store by multigroup group more.In the case, 1 group of 2 of memory page P70 groups and memory page P71 can be used to Storage Mapping information.In super page P7B, the size of each garbage reclamation data GC6～GC9 equals 4kB, and garbage reclamation data GC6～GC9 also inserts respectively memory page P76 or P77 Zhong Yi group.Because map information is simultaneously corresponding to user data and garbage reclamation data GC6～GC9, so map information also may need to store by multigroup group more.In the case, 1 group of 2 of memory page P74 groups and memory page P75 can be used to Storage Mapping information.
It should be noted that the present invention can be used for the sector sizes of managing non-volatile memory according to main frame, is divided into a plurality of groups by a memory page, and writes dissimilar data in different groups.Those skilled in the art works as and can modify according to this or change, and is not limited to this.For instance, in write-once operation, main frame can write the data of any type according to system requirements, and it includes but not limited to user data, garbage reclamation data, average read-write memory block data and corresponding to the map information of above-mentioned each data.In addition, the configuration mode of data in different groups also can be determined according to system requirements, for example the demand of power interruption recovering or backup.
In known technology, when in a memory page, the data wish of a sector sizes is upgraded, the more new data of this section must write a new memory page, in new memory page, other unnecessary memory space must be filled up other data in former memory page, thereby causes the low of the waste of storage space and write efficiency.In addition,, in write operation each time, a memory page can only write the data of a type.In comparison, the present invention can be cut into memory page a plurality of groups, and each logical group can map to a physics group.Dissimilar data can be stored in the different groups of same memory page, can promote the space service efficiency of efficiency of bandwidth use and the storer of Memory Controller.In addition, the efficiency of user data backup and power interruption recovering management also can obtain lifting simultaneously.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (20)
1. manage a method for a nonvolatile memory, this nonvolatile memory includes a plurality of storage blocks, and wherein each storage block includes a plurality of memory pages, and the method includes:
A memory page in the plurality of memory page is divided into a plurality of groups; And
By data and corresponding to a map information of these data, write different groups in the plurality of group.
2. the method for claim 1, is characterized in that, the method also includes:
The size of Yi Yi group is that unit shines upon logical address to physical address.
3. the method for claim 1, is characterized in that, by these data and corresponding to the step that this map informations of this data writes different groups in the plurality of group, in the operation of this memory page of write-once, carries out.
4. the method for claim 1, is characterized in that, these data comprise a user data, garbage reclamation data or average read-write memory block data.
5. the method for claim 1, is characterized in that, this map information comprises that a logical address that is relevant to these data maps to the information of a physical address of this nonvolatile memory.
6. the method for claim 1, is characterized in that, this map information comprises the information of physical address map to logical address that is relevant to these data.
7. the method for claim 1, is characterized in that, the method also includes:
In conjunction with the memory page in different storage blocks, to produce a super page.
8. method as claimed in claim 7, is characterized in that, the method also includes:
These data are write respectively to different memory pages in this super page.
9. method as claimed in claim 8, is characterized in that, these data comprise a user data.
10. the method for claim 1, is characterized in that, these data are stored at least one group in the plurality of group of this memory page.
11. 1 kinds of Nonvolatile memory devices, include:
One nonvolatile memory, includes a plurality of storage blocks, and wherein each storage block includes a plurality of memory pages; And
One Memory Controller, is coupled to this nonvolatile memory, by carrying out following steps, this nonvolatile memory is managed:
A memory page in the plurality of memory page is divided into a plurality of groups; And
By data and corresponding to a map information of these data, write different groups in the plurality of group.
12. Nonvolatile memory devices as claimed in claim 11, is characterized in that, this Memory Controller is also carried out following steps, so that this nonvolatile memory is managed:
The size of Yi Yi group is that unit shines upon logical address to physical address.
13. Nonvolatile memory devices as claimed in claim 11, is characterized in that, this data and write different groups in the plurality of group corresponding to this map informations of this data in the operation of this memory page of write-once.
14. Nonvolatile memory devices as claimed in claim 11, is characterized in that, these data comprise a user data, garbage reclamation data or average read-write memory block data.
15. Nonvolatile memory devices as claimed in claim 11, is characterized in that, this map information comprises that a logical address that is relevant to these data maps to the information of a physical address of this nonvolatile memory.
16. Nonvolatile memory devices as claimed in claim 11, is characterized in that, this map information comprises the information of physical address map to logical address that is relevant to these data.
17. Nonvolatile memory devices as claimed in claim 11, is characterized in that, this Memory Controller is also carried out following steps, so that this nonvolatile memory is managed:
In conjunction with the memory page in different storage blocks, to produce a super page.
18. Nonvolatile memory devices as claimed in claim 17, is characterized in that, this Memory Controller is also carried out following steps, so that this nonvolatile memory is managed:
These data are write respectively to different memory pages in this super page.
19. Nonvolatile memory devices as claimed in claim 18, is characterized in that, these data comprise a user data.
20. Nonvolatile memory devices as claimed in claim 11, is characterized in that, these data are stored at least one group in the plurality of group of this memory page.
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| US201361818884P | 2013-05-02 | 2013-05-02 | |
| US61/818,884 | 2013-05-02 | ||
| US13/953,764 US20140328127A1 (en) | 2013-05-02 | 2013-07-30 | Method of Managing Non-Volatile Memory and Non-Volatile Storage Device Using the Same |
| US13/953,764 | 2013-07-30 |
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| CN106095699A (en) * | 2015-03-20 | 2016-11-09 | 爱思开海力士有限公司 | Expansible SPOR algorithm for flash memory |
| CN106897026A (en) * | 2016-10-07 | 2017-06-27 | 威盛电子股份有限公司 | Nonvolatile memory device and address classification method thereof |
| CN109284294A (en) * | 2018-10-12 | 2019-01-29 | 珠海格力智能装备有限公司 | Acquire method and device, the storage medium, processor of data |
| US10733107B2 (en) | 2016-10-07 | 2020-08-04 | Via Technologies, Inc. | Non-volatile memory apparatus and address classification method thereof |
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| CN106095699A (en) * | 2015-03-20 | 2016-11-09 | 爱思开海力士有限公司 | Expansible SPOR algorithm for flash memory |
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| CN109284294A (en) * | 2018-10-12 | 2019-01-29 | 珠海格力智能装备有限公司 | Acquire method and device, the storage medium, processor of data |
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