CN104124938B - The resonant frequency of resonator and resonator regulates and controls method - Google Patents
The resonant frequency of resonator and resonator regulates and controls method Download PDFInfo
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- CN104124938B CN104124938B CN201410346083.XA CN201410346083A CN104124938B CN 104124938 B CN104124938 B CN 104124938B CN 201410346083 A CN201410346083 A CN 201410346083A CN 104124938 B CN104124938 B CN 104124938B
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Abstract
The invention discloses the resonant frequency of a kind of resonator and a kind of resonator to regulate and control method, and resonant frequency regulation and control method includes：One resonator is provided, wherein, resonator includes piezoelectric layer and multiple electrodes layer；According to expected resonant frequency requirement, multilayer molecular film is formed in resonator surface, wherein, multilayer molecular film is used to be adjusted the resonant frequency of resonator.The present invention, and can be by regulation and control of the simple and effective realization of the multilayer molecular film of formation to resonator resonant frequency by forming multilayer molecular film in resonator surface, while and can enough saves cost, and improve the precision of frequency regulation and control；In addition, the present invention makes multilayer molecular film obtain the deposition of selectivity in resonator surface, avoids the influence of the resonator para-linkage line connection after processing by carrying out plasma treatment to resonator surface.
Description
Technical field
The present invention relates to semiconductor applications, it particularly relates to a kind of resonator, and a kind of resonant frequency of resonator
Regulation and control method.
Background technology
With the fast development of mechanics of communication, the centre frequency of communication apparatus, which has, to be substantially improved, therefore, communication system pair
All many-sides such as the performance of frequency-selecting device --- wave filter, size there has also been higher requirement, also, the miniaturization of communication system
And the integrated inexorable trend for also having become System Development.
However, for existing conventional filter, when the centre frequency lifting of communication system arrives sufficiently high, such as
Centre frequency reaches more than Gigahertz, then due to the limitation of the reasons such as its own performance, existing conventional filter is obvious
Can not meet the needs of communication system integration and miniaturization.
Therefore, in order to overcome the drawbacks described above of conventional filter, in the market have developed the wave filter of various new, such as
FBAR filter, and due to Novel Filter have that small volume, quality factor are high, working frequency is high and with
The high plurality of advantages of semiconductor technology compatibility, makes it have more wide market prospects in communication field.
So, for FBAR filter, it is by being carried out to multiple FBARs
Series connection realizes the filtering to signal with the topological structure in parallel formed, therefore, the resonant frequency of resonator in wave filter
Directly affect the passband position of wave filter, that is to say, that the resonant frequency of resonator has directly to the filter effect of wave filter
The influence connect.
Therefore, in order that the filter effect of Novel Filter is more preferable, in traditional resonator technique, mainly by changing
The thickness for becoming the mass loading of resonator surface realizes the regulation and control to resonator resonant frequency, that is to say, that prior art
It is to realize the tune to resonator resonant frequency by using the methods of deposition traditional in semiconductor technology, photoetching and etching
Control.
But for the regulation and control method of above-mentioned traditional resonator resonant frequency, it is common that there is regulation and control cost it is high, when
Between it is long, and the problem of complex operation and low control accuracy, further, since needing to use photoetching in above-mentioned traditional regulation process
The chemicals such as glue, etching liquid, therefore, it can also bring certain harm to operating personnel and environment.
And for when the resonant frequency to resonator regulates and controls, the existing regulation and control time is long in correlation technique, into
This height, complex operation and the problems such as control accuracy is low, not yet propose effective solution at present.
The content of the invention
For, when the resonant frequency to resonator regulates and controls, the existing regulation and control time is long in correlation technique, cost
High, the problem of complex operation and control accuracy are low, the present invention proposes that the resonant frequency of a kind of resonator and a kind of resonator is adjusted
Prosecutor method, regulation and control to resonator resonant frequency can be realized by way of forming multilayer molecular film in resonator surface,
And can enough saves cost simultaneously, and improves the precision of frequency regulation and control.
The technical proposal of the invention is realized in this way：
According to an aspect of the invention, there is provided a kind of resonant frequency regulation and control method of resonator.
Resonant frequency regulation and control method includes：
One resonator is provided, wherein, resonator includes piezoelectric layer and multiple electrodes layer；
According to expected resonant frequency requirement, multilayer molecular film is formed in resonator surface, wherein, multilayer molecular film
For being adjusted to the resonant frequency of resonator.
Wherein, can be by numerator self-assembly technique, in resonator surface when resonator surface forms multilayer molecular film
Form multilayer molecular film.
Wherein, realizing the mode of molecular self-assembling may include at least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, group is carried out with polyallylamine hydrochloride or allylamine hydrochloride
Dress；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or benzene second
Alkene sulfonate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
In addition, when resonator surface forms multilayer molecular film, resonator can be distinguished by different a variety of solution
The mode of deposition processes is carried out, different a variety of solution is passed through molecule between a variety of solution in the presence of no external force
Interaction force forms multilayer molecular film in resonator surface.
Wherein, the mode of deposition processes includes at least one of：
By way of solution immersion；
By way of rotating and smearing.
In addition, when the resonant frequency to resonator is adjusted, the object of adjustment may include at least one of：
The concentration of every kind of solution；
Hydrogen ion activity index (PH) value of every kind of solution；
The time that every kind of solution deposits in resonator surface；
The number of the deposition processes of solution is carried out to resonator.
Wherein, solution can be made up of organic solution or is made up of mineral solution, also, different
A variety of solution can be made up of two or more organic solution, can also be molten by two or more inorganic matter
Liquid forms.
Also, the interaction force of molecule can include at least one of between a variety of solution：
Electrostatic interaction between organic molecule；
Hydrogen bond action between organic molecule；
Coordinate bond effect between organic molecule；
Interaction between inorganic matter molecule；
The interaction for the functional group modified between inorganic matter, wherein, modified with functional group is previously-completed to inorganic matter.
In addition, before resonator surface forms multilayer molecular film, resonant frequency regulation and control method further comprises：
By carrying out modified with functional group to resonator, the surface of resonator is set to form chemical functional group；
Also, it is corresponding, when resonator surface forms multilayer molecular film, chemical function can had been formed with
The surface of the resonator of group forms multilayer molecular film, wherein it is possible to make chemical functional group realize molecule with multilayer molecular film
Self assembly.
Wherein, before modified with functional group is carried out to resonator, resonant frequency regulation and control method further comprises：
By carrying out plasma treatment to resonator, resonator surface is set to form hydroxyl；
Also, it is corresponding, when carrying out modified with functional group to resonator, the resonator of hydroxyl can had been formed with
Surface carry out modified with functional group.
Wherein, the mode of modified with functional group may include at least one of：
Chemical vapor deposition；The mode of wet chemistry.
In addition, before resonator surface forms multilayer molecular film, resonant frequency regulation and control method further comprises：
By carrying out plasma treatment to resonator, resonator surface is set to form hydroxyl；
Also, it is corresponding, when resonator surface forms multilayer molecular film, the humorous of hydroxyl can had been formed with
The shake surface of device forms multilayer molecular film, hydroxyl and multilayer molecular film is realized molecular self-assembling.
According to another aspect of the present invention, there is provided a kind of resonator.
The resonator includes：
First electrode；
Piezoelectric layer, wherein, at least a portion of piezoelectric layer is placed in above first electrode；
Second electrode, wherein, at least a portion placement of second electrode is over the piezoelectric layer；
One surface, first electrode, piezoelectric layer and second electrode are respectively positioned on the lower section on surface；
Multilayer molecular film, positioned at the top on surface, wherein, multilayer molecular film is used to enter the resonant frequency of resonator
Row adjustment.
Wherein, multilayer molecular film can be formed by numerator self-assembly technique, also, the mode of molecular self-assembling can wrap
Include at least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, group is carried out with polyallylamine hydrochloride or allylamine hydrochloride
Dress；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or benzene second
Alkene sulfonate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
In addition, the resonator can be FBAR or SAW resonator, wheel can also be
Wide mode resonator.
In addition, the composition material of piezoelectric layer may be selected from the group for including following material：Zinc oxide, aluminium nitride.
Optionally, the resonator further comprises：
Define the substrate of cavity；
Seed Layer, it is placed in above substrate, and above the cavity of at least a portion placement of Seed Layer in the substrate；
Also, first electrode is placed in above Seed Layer.
Wherein, substrate is silicon substrate.
Also, the composition material of Seed Layer may be selected from the group for including following material：Aluminium nitride material.
In addition, the resonator may also include：
Passivation layer, for realizing the electrical insulation of resonator, and resonator is prevented to be oxidized；
Gold thin film, for realizing being bonded for resonator and peripheral printed circuit board (PCB) gold thread；
Wherein, passivation layer and gold thin film are respectively positioned on beyond first electrode, piezoelectric layer and second electrode, also, multilayer molecular
Film is formed at the outer surface of passivation layer.
Also, the composition material of passivation layer may be selected from the group for including following material：Aluminium nitride material, silicon materials, titanium dioxide
Silicon materials, quartz material.
Present invention resonant frequency requirement expected from, by forming multilayer molecular film in resonator surface, and pass through
Multilayer molecular film realizes the adjustment to the resonant frequency of resonator.While the regulation and control to resonator resonant frequency are completed
And can enough saves cost, and improves the precision of frequency regulation and control.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the flow chart of the resonant frequency regulation and control method of resonator according to embodiments of the present invention；
Fig. 2 is the sectional view according to a kind of FBAR of a specific embodiment of the invention；
Fig. 3 is to carry out molecular self-assembling multilayer film to device according to a specific embodiment of the invention to deposit come regulating frequency
Flow chart；
Fig. 4 is the chemical reaction schematic diagram deposited according to the molecular self-assembling multilayer film of a specific embodiment of the invention；
Fig. 5 is after forming multilayer molecular film on FBAR surface according to an of the invention specific embodiment
Sectional view, and resonator sectional view according to embodiments of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained, belong to what the present invention protected
Scope.
According to an embodiment of the invention, there is provided a kind of resonant frequency regulation and control method of resonator.
As shown in figure 1, resonator regulation and control method according to embodiments of the present invention includes：
Step S101, there is provided a resonator, wherein, resonator includes piezoelectric layer and multiple electrodes layer；
Step S103, according to expected resonant frequency requirement, multilayer molecular film is formed in resonator surface, wherein, it is more
Layer molecular film is used to be adjusted the resonant frequency of resonator.
By the such scheme of the present invention, can be realized in resonator surface by way of forming multilayer molecular film pair
The regulation and control of resonator resonant frequency, while and can enough saves cost, and improve the precision of frequency regulation and control.
Due to self-assembling technique have it is simple and easy to do, the characteristics of without special device, therefore, in one embodiment, when
When resonator surface forms multilayer molecular film, multilayer molecular can be formed in resonator surface by numerator self-assembly technique
Film.
Wherein, realizing the mode of molecular self-assembling may include at least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, group is carried out with polyallylamine hydrochloride or allylamine hydrochloride
Dress；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or benzene second
Alkene sulfonate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
It is noted that in actual applications, realize that the mode of molecular self-assembling can also be above-mentioned unrequited
Other organic matters or inorganic matter between assembling, as long as it can realize molecular self-assembling, that is to say, that of the invention
Technical scheme is not limited to the above-mentioned assembling mode enumerated.
In another embodiment, when resonator surface forms multilayer molecular film, different a variety of solution can be passed through
Carry out the mode of deposition processes respectively to resonator, make different a variety of solution in the presence of no external force, by a variety of molten
The interaction force of molecule forms multilayer molecular film in resonator surface between liquid.
Wherein, the mode of deposition processes can be that solution immersion or rotation are smeared, naturally it is also possible to be other
Deposition processes mode, the present invention are not limited this.
In addition, in another embodiment, the solution can be organic solution or mineral solution, also,
Different a variety of solution can be made up of or by two or more two or more organic solution
Mineral solution composition, the present invention this is not limited.
In addition, in one embodiment, the interaction force of molecule can be between organic molecule between a variety of solution
Effect or inorganic matter molecule between effect；
Can be positive negative electricity between organic molecule in actual applications for the effect between organic molecule
The electrostatic force of lotus, such as：PAH and polyacrylic acid, polyethyleneimine and polyacrylic acid, poly rely ammonia
Acid and hyaluronic acid, poly- (styrene sulfonate) and PAH, poly- (diallyldimethylammonium chloride) and gather
(styrene sulfonate) etc.；The hydrogen bond action between organic molecule is can also be, such as：Tannic acid and polyvinylpyrrolidine
Ketone, tannic acid and poly-N-vinylcaprolactam, tannic acid and poly-N-isopropyl acrylamide, poly- (4-vinylpyridine) and poly- third
Olefin(e) acid etc.；It can also be the coordinate bond effect between organic molecule；Can certainly be other works between organic molecule
With, if its can by between molecule act on resonator surface formed multilayer molecular film, the present invention to this simultaneously
It is not construed as limiting.
Can be mutual between inorganic matter molecule in actual applications for the effect between inorganic matter molecule
Effect；Can also be the interaction for the functional group modified between inorganic matter, wherein, functional group can be previously-completed to inorganic matter and repaiied
Decorations.
In addition, in another embodiment, can by adjust the concentration of every kind of solution, every kind of solution pH value, every kind of
The time that solution deposits in resonator surface, and the number of the deposition processes of solution is carried out to resonator, to adjust multilayer point
Sub- film is in the formation of resonator surface, the purpose being adjusted so as to the resonant frequency realized to resonator.
It is noted that in actual applications, when the resonant frequency to resonator is adjusted, pair of adjustment
As that can be any one listed above or any combination, the present invention not be limited this, in addition, in reality
In, the object of adjustment can also be the factor that unrequited other influences multilayer molecular film is formed, the present invention to this simultaneously
Do not limit.
In another embodiment, before resonator surface forms multilayer molecular film, resonant frequency regulation and control method
It may also include：
Modified with functional group is carried out to resonator, the surface of resonator is formed chemical functional group, realizes the of molecular film
One layer of deposition；Also, corresponding, then it is to have been formed with chemical official when resonator surface forms multilayer molecular film
The surface for the resonator that can be rolled into a ball forms multilayer molecular film, wherein, the chemical functional group of modification can be amino or carboxylic
Base, other chemical functional groups are can also be, as long as it can realize molecular self-assembling with multilayer molecular film, increased so as to reach
The effect of strong multilayer molecular thin film stability, the present invention are not limited this.
Wherein, before modified with functional group is carried out to resonator, plasma treatment can also be carried out to resonator, so that humorous
Shake device surface formation hydroxyl, naturally it is also possible to is other chemical groups, the present invention is not limited this；Also, phase therewith
Answer, be then to carry out functional group on the surface for having been formed with the resonator of hydroxyl to repair when carrying out modified with functional group to resonator
Decorations.
Wherein, the mode of modified with functional group can be chemical vapor deposition or the mode of wet chemistry, can be with
It is that combination uses, naturally it is also possible to be the mode of other modified with functional group, the present invention is not limited this.
In another embodiment, before resonator surface forms multilayer molecular film, resonant frequency regulation and control method
It may also include：
Plasma treatment is carried out to resonator, resonator surface is formed hydroxyl；
Also, corresponding, then it is to have been formed with the humorous of hydroxyl when resonator surface forms multilayer molecular film
The shake surface of device forms multilayer molecular film, hydroxyl and multilayer molecular film is realized molecular self-assembling.
In order to be better understood from the above-mentioned technical proposal of the present invention, carried out below with polyacrylic acid and poly- (4-vinylpyridine)
Exemplified by molecular self-assembling, on FBAR, multilayer molecular film is formed by numerator self-assembly technique, come real
Now the implementation of the regulation to resonant frequency is further elaborated.
Fig. 2 is a kind of sectional view of representative FBAR.As shown in 200, wherein 201 be silicon
Substrate, after one layer of aln seed layer 211 are deposited, it will deposit one layer of hearth electrode 212, afterwards, most important one layer again
Piezoelectric layer 213 can be formed on hearth electrode, and this lamination electric layer is usually zinc oxide or aluminium nitride, now by taking aluminium nitride as an example.Again
One layer of top electrode 214 is deposited, the resonator of the sandwich structure formed material is thus formed bottom electrode, piezoelectric layer and top electrode.
In order to realize the electrical insulation of device, while device is prevented to be oxidized, it will usually in the redeposited one layer of nitrogen in film bulk acoustic surface
Change aluminium 215 and be used as passivation layer.Finally, in order to realize that chip is bonded with peripheral PCB gold threads, one layer of gold thin film 216 can pass through photoetching
It is deposited on device.In the present invention, we are exactly to carrying out amido modified realizing molecule from group by nitrogenizing aluminum insulation layer 215
Fill multilayer film deposition.
Fig. 3 is a kind of representative by carrying out molecular self-assembling multilayer film deposition to device come the stream of regulating frequency
Cheng Tu.Just as shown at 300, its whole flow process is as follows：First, FBAR is removed by washes of absolute alcohol 301
The partial impurities on surface are gone, and 302 are dried up with nitrogen.Then, chip is put into 303 in plasma cleaner, with plasma pair
Its surface is slightly bombarded, and bombardment process can form one layer of hydroxyl in aln surface.And then by FBAR
It is put into vacuum desiccator and carries out amido modified 304, what is be together put into is the APTES of a small amount of liquid.
By above step, it will be evacuated using vavuum pump inside vacuum desiccator and maintain 12 hours, so, the 3- amino of liquid
Propyl-triethoxysilicane can preferably evaporate into the aluminium nitride film surface containing hydroxyl, and chemically react therewith,
And then form amido functional group.Finally in order to form the film of more stable homogeneous, will pass through more than the film bulk acoustic that handles
Resonator 305 heat in vacuum drying oven dry a period of time.The characteristics of this method is that, due to after plasma treatment,
Gold surface will not form hydroxyl, so APTES will not be deposited on gold solder panel surface, thus select
Property be deposited on non-welding disking area position, also will not be enterprising in welding disking area in follow-up molecular self-assembling multilayer film deposition
OK, chip is facilitated to be bonded with PCB progress gold threads.That is The method avoids carry out photoetching or stripping using reticle
From etc. the technique that takes time and effort.
After being processed as above, FBAR is alternately dipped into the ethanol solution containing polyacrylic acid
306 and the ethanol solution 308 containing poly- (4-vinylpyridine) in, such soak makes the carboxyl of polyacrylic acid and poly- (4- ethene
Pyridine) pyridine combined by the effect of hydrogen bond and form thin film deposition in aluminium nitride passivation layer surface, wherein every time
The cleaning of absolute ethyl alcohol 307 and 309 will be passed through after immersion.So, the film of two layers of molecular self-assembling just forms, by following
FBAR is immersed in polyacrylic acid and poly- (4-vinylpyridine) and just forms multi-layer film structure by ring, and film number is got over
More, mass loading is bigger, and the frequency change of FBAR is just bigger.
Fig. 4 is a kind of chemical reaction schematic diagram of representative molecular self-assembling multilayer film deposition.As 400 institutes
Show, first aln surface by plasma bombardment produce hydroxyl 401, then by APTES with
Hydroxyl reaction is modified into amino 402, and caused amino can pass through hydrogen bond with the ethanol solution containing polyacrylic acid 403 carboxyl
Combine, unnecessary carboxyl can enter with the amino of the ethanol solution 404 containing poly- (4-vinylpyridine) next soaked
One step together, so just forms two layers of molecular self-assembling film by Hydrogenbond.
Fig. 5 is a kind of representative after FBAR surface progress molecular self-assembling multilayer film deposition
Sectional view.Just as indicated at 500, on the architecture basics of the FBAR shown in Fig. 2, one layer or multilayer point
Sub- self-assembled film 517 is deposited on the aluminium nitride material 515 on surface, without being deposited on pad 516.
In the present embodiment, the present invention regulates and controls the resonance frequency of resonator by the method for chemical modification and molecular self-assembling
Rate.The method forms hydroxyl, and using the method for vapour deposition, realize by plasma treatment on aluminium nitride material surface
With hydroxyl chemical bond occurs for silylating reagent, one layer of amido functional group is formed in device surface, eventually through two kinds of organic matters
Molecular self-assembling FBAR surface deposit one layer of organic film as mass loading come regulate and control its resonance frequently
Rate.It is time saving and energy saving to the advantage is that, and cost is low, simple to operate, and frequency control accuracy is high, also, because passes through plasma
Processing will not form hydroxyl in gold surface, therefore molecular self-assembling deposition will not be carried out on gold solder disk, eliminate using mask
Version carries out the flow of photoetching, avoids the influence of para-linkage line connection etc., realizes selective deposition.
Wherein, in actual applications, when realizing molecular self-assembling stratiform deposition, can both be entered by artificial mode
OK, can also be carried out by the fully-automatic equipment of Specialty Design, the present invention is not limited this.
In addition, in actual applications, technical scheme not only goes for resonator, it can also be applied to
In other semiconductor fabrication process in qualified device manufacture, the present invention is not limited this.
According to an embodiment of the invention, a kind of resonator is additionally provided.
As shown in figure 5, resonator according to embodiments of the present invention includes：
First electrode 512；
Piezoelectric layer 513, wherein, at least a portion of piezoelectric layer is placed in above first electrode；
Second electrode 514, wherein, at least a portion placement of second electrode is over the piezoelectric layer；
One surface (not shown), first electrode, piezoelectric layer and second electrode are respectively positioned on the lower section on surface；
Multilayer molecular film 517, positioned at the top on surface, wherein, multilayer molecular film is used for the resonance frequency to resonator
Rate is adjusted.
Wherein, in one embodiment, multilayer molecular film 517 can be formed by numerator self-assembly technique, also, molecule
The mode of self assembly includes at least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, group is carried out with polyallylamine hydrochloride or allylamine hydrochloride
Dress；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or benzene second
Alkene sulfonate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
Also, in one embodiment, the type of resonator can be FBAR or sound surface
Wave resonator, can also be outline mode resonator, naturally it is also possible to be other unrequited resonators, the present invention to this not
Limit.
In addition, in another embodiment, the composition material of piezoelectric layer 513 is selected from the group for including following material：Zinc oxide,
Aluminium nitride.
In one embodiment, the resonator further comprises：
Define the substrate 501 of cavity；
Seed Layer 511, the top of substrate 501 is placed in, and at least a portion of Seed Layer 511 is placed in substrate 501
Cavity above；
Also, first electrode is placed in the top of Seed Layer 511.
Wherein, substrate 501 is silicon substrate.
In addition, in another embodiment, the composition material of Seed Layer 511 is selected from the group for including following material：Aluminium nitride
Material.
In addition, in one embodiment, the resonator further comprises：
Passivation layer 515, for realizing the electrical insulation of resonator, and resonator is prevented to be oxidized；
Gold thin film 516, for realizing being bonded for resonator and PCB gold threads；
Wherein, be passivated 515 layers and gold thin film 516 be respectively positioned on first electrode 512, piezoelectric layer 513 and second electrode 514 with
Outside, also, multilayer molecular film 517 is formed at the outer surface of passivation layer 515.
Wherein, in one embodiment, the composition material of passivation layer 515 is selected from the group for including following material：Nitrogenize aluminium
Material, silicon materials, earth silicon material, quartz material.
In summary, by means of the present invention above-mentioned technical proposal, by resonator surface formed multilayer molecular film,
And by the simple and effective regulation and control realized to resonator resonant frequency of multilayer molecular film of formation, while and can is enough saved
Cost, and improve the precision of frequency regulation and control；In addition, the present invention makes multilayer by carrying out plasma treatment to resonator surface
Molecular film has obtained the deposition of selectivity in resonator surface, avoids the shadow of the resonator para-linkage line connection after processing
Ring.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God any modification, equivalent substitution and improvements made etc., should be included in the scope of the protection with principle.
Claims (21)
1. a kind of resonant frequency regulation and control method of resonator, it is characterised in that including：
One resonator is provided, wherein, the resonator includes piezoelectric layer and multiple electrodes layer；
According to expected resonant frequency requirement, multilayer molecular film is formed in the resonator surface, wherein, the multilayer molecular
Film is used to be adjusted the resonant frequency of the resonator, and by being carried out in the resonator surface at plasma
Reason, makes the multilayer molecular film be deposited on the non-welding disking area position of the resonator surface, will not be deposited on gold solder panel
On the position of domain.
2. resonant frequency according to claim 1 regulates and controls method, it is characterised in that forms multilayer in the resonator surface
Molecular film includes：
By numerator self-assembly technique, multilayer molecular film is formed in the resonator surface.
3. resonant frequency according to claim 2 regulates and controls method, it is characterised in that realizing the mode of molecular self-assembling includes
At least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, assembled with polyallylamine hydrochloride or allylamine hydrochloride；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or styrene sulphur
Hydrochlorate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
4. resonant frequency according to claim 1 regulates and controls method, it is characterised in that forms multilayer in the resonator surface
Molecular film includes：
Deposition processes are carried out respectively to the resonator by different a variety of solution, are not having different a variety of solution
It is thin in resonator surface formation multilayer molecular by the interaction force of molecule between a variety of solution in the presence of external force
Film.
5. resonant frequency according to claim 4 regulates and controls method, it is characterised in that the mode of the deposition processes include with
It is at least one lower：
By way of solution immersion；
By way of rotating and smearing.
6. resonant frequency according to claim 4 regulates and controls method, it is characterised in that in the resonant frequency to the resonator
When being adjusted, the object of adjustment includes at least one of：
The concentration of every kind of solution；
The hydrogen ion activity indices P H values of every kind of solution；
The time that every kind of solution deposits in the resonator surface；
The number of the deposition processes of solution is carried out to the resonator.
7. resonant frequency according to claim 4 regulates and controls method, it is characterised in that the solution include organic solution or
Mineral solution, also, different a variety of solution include at least two organic solutions or at least two mineral solutions.
8. resonant frequency according to claim 7 regulates and controls method, it is characterised in that the phase of molecule between a variety of solution
Interreaction force includes at least one of：
Electrostatic interaction between organic molecule；
Hydrogen bond action between organic molecule；
Coordinate bond effect between organic molecule；
Interaction between inorganic matter molecule；
The interaction for the functional group modified between inorganic matter, wherein, modified with functional group is previously-completed to the inorganic matter.
9. resonant frequency according to claim 1 regulates and controls method, it is characterised in that forms multilayer in the resonator surface
Before molecular film, the resonant frequency regulation and control method further comprises：
Modified with functional group is carried out to the resonator, the surface of the resonator is formed chemical functional group；
Also, forming multilayer molecular film in the resonator surface includes：
Multilayer molecular film is formed on the surface for having been formed with the resonator of chemical functional group, wherein, make the chemical official
It can roll into a ball and realize molecular self-assembling with the multilayer molecular film.
10. resonant frequency according to claim 9 regulates and controls method, it is characterised in that is carrying out function to the resonator
Before group's modification, the resonant frequency regulation and control method further comprises：
Plasma treatment is carried out to the resonator, the resonator surface is formed hydroxyl；
Also, carrying out modified with functional group to the resonator includes：
Modified with functional group is carried out on the surface for having been formed with the resonator of hydroxyl.
11. resonant frequency according to claim 9 regulates and controls method, it is characterised in that the mode bag of the modified with functional group
Include at least one of：
Chemical vapor deposition；The mode of wet chemistry.
12. resonant frequency according to claim 1 regulates and controls method, it is characterised in that is formed in the resonator surface more
Before layer molecular film, the resonant frequency regulation and control method further comprises：
Plasma treatment is carried out to the resonator, the resonator surface is formed hydroxyl；
Also, forming multilayer molecular film in the resonator surface includes：
Multilayer molecular film is formed on the surface for having been formed with the resonator of hydroxyl, makes the hydroxyl and the multilayer molecular
Film realizes molecular self-assembling.
A kind of 13. resonator, it is characterised in that including：
First electrode；
Piezoelectric layer, wherein, at least a portion of the piezoelectric layer is placed in above the first electrode；
Second electrode, wherein, at least a portion of the second electrode is placed in above the piezoelectric layer；
One surface, the first electrode, the piezoelectric layer and the second electrode are respectively positioned on the lower section on the surface；
Multilayer molecular film, positioned at the top on the surface, wherein, the multilayer molecular film is used for the humorous of the resonator
Vibration frequency is adjusted, and by carrying out plasma treatment on the surface, the multilayer molecular film is deposited on the table
On the non-welding disking area position in face, it will not be deposited on gold solder disk area position.
14. resonator according to claim 13, it is characterised in that the multilayer molecular film passes through molecular self-assembling skill
Art is formed, and the mode of molecular self-assembling includes at least one of：
By polyallylamine hydrochloride or allylamine hydrochloride, assembled with polyacrylic acid；
Polyethyleneimine and polyacrylic acid are assembled；
Poly-D-lysine and hyaluronic acid are assembled；
By poly styrene sulfonate or styrene sulfonate, assembled with polyallylamine hydrochloride or allylamine hydrochloride；
By diallyl dimethyl ammoniumchloride or diallyldimethylammonium chloride, with poly styrene sulfonate or styrene sulphur
Hydrochlorate is assembled；
Tannic acid and polyvinylpyrrolidone are assembled；
Tannic acid and poly-N-vinylcaprolactam are assembled；
Tannic acid and poly-N-isopropyl acrylamide are assembled；
By poly- 4-vinylpyridine or 4-vinylpyridine, assembled with polyacrylic acid.
15. resonator according to claim 13, it is characterised in that it is humorous that the type of the resonator includes film bulk acoustic
Shake device, SAW resonator, outline mode resonator.
16. resonator according to claim 13, it is characterised in that the composition material of the piezoelectric layer is following selected from including
The group of material：Zinc oxide, aluminium nitride.
17. resonator according to claim 13, it is characterised in that further comprise：
Define the substrate of cavity；
Seed Layer, it is placed in above the substrate, and at least a portion of the Seed Layer is placed in the institute in the substrate
State above cavity；
Also, the first electrode is placed in above the Seed Layer.
18. resonator according to claim 17, it is characterised in that the substrate is silicon substrate.
19. resonator according to claim 17, it is characterised in that the composition material of the Seed Layer is following selected from including
The group of material：Aluminium nitride material.
20. resonator according to claim 13, it is characterised in that further comprise：
Passivation layer, for realizing the electrical insulation of resonator, and the resonator is prevented to be oxidized；
Gold thin film, for realizing being bonded for the resonator and peripheral printing board PCB gold thread；
Wherein, the passivation layer and the gold thin film be respectively positioned on the first electrode, the piezoelectric layer and the second electrode with
Outside, also, the multilayer molecular film is formed at the outer surface of the passivation layer.
21. resonator according to claim 20, it is characterised in that the composition material of the passivation layer is following selected from including
The group of material：Aluminium nitride material, silicon materials, earth silicon material, quartz material.
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| US9906206B2 (en) * | 2016-06-20 | 2018-02-27 | Ishiang Shih | Tunable surface acoustic wave resonators and filters |
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| CN107834992A (en) * | 2017-11-13 | 2018-03-23 | 戴承萍 | The resonant frequency of resonator and resonator regulates and controls method |
| US11271543B2 (en) * | 2018-02-13 | 2022-03-08 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
| CN110957990B (en) * | 2019-11-18 | 2021-02-19 | 武汉敏声新技术有限公司 | Frequency modulation method of ultrahigh frequency resonator |
| WO2021128339A1 (en) * | 2019-12-27 | 2021-07-01 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
| CN111224639B (en) * | 2020-01-19 | 2020-11-27 | 中国人民解放军军事科学院国防科技创新研究院 | Resonant frequency self-adaptive control system based on two-dimensional heterogeneous thin film |
| CN112865740A (en) * | 2020-12-31 | 2021-05-28 | 中国科学院半导体研究所 | MEMS resonator based on modal redistribution and adjusting method thereof |
| CN112953447B (en) * | 2021-02-09 | 2023-08-11 | 偲百创(深圳)科技有限公司 | Resonator and electronic device |
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