CN104118844A - Method for thinning silicon-base back surface - Google Patents
Method for thinning silicon-base back surface Download PDFInfo
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- CN104118844A CN104118844A CN201410334894.8A CN201410334894A CN104118844A CN 104118844 A CN104118844 A CN 104118844A CN 201410334894 A CN201410334894 A CN 201410334894A CN 104118844 A CN104118844 A CN 104118844A
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Abstract
The invention discloses a method for thinning a silicon-base back surface, and relates to an etching technology. The method comprises the following steps: first, using a raw material belt and silica gel to completely seal the back surface of a silicon-base sheet except for the region to be thinned; secondly, using a corrosive liquid to carry out corrosion on the region to be thinned after the silica gel is completely cured, keeping on the corrosion treatment until the thickness of the region reaches the required level; and thirdly, removing the raw material belt after the thinning technology is completed. The silica gel and raw material belt is cheap and safe, so the method can effectively overcome the shortages of high cost and limitation of a method for protecting the front device patterns during the silicon base thinning process in the prior art, moreover the method is suitable for thinning silicon base with different sizes, is especially suitable for being used in labs, and is capable of shortening the experiment period, and reducing the experiment costs.
Description
Technical field
The present invention relates to etching technics, especially relate to a kind of silica-based thinning method for backing side.
Background technology
Surface acoustic wave (SAW, Surface Acoustic Wave) is a kind of elastic wave of propagating along body surface.Surface acoustic wave sensor precision is high, highly sensitive, resolution ratio is high, anti-electromagnetic interference capability is strong, does not need mould/number conversion.Sensitive Apparatus adopts semiconductor planar technique to make, and is easy to integratedly, is convenient to large-scale production.In prior art, have much sensors based on table technology of acoustic wave, aluminium nitride is the current known the highest piezoelectric of the velocity of sound, and has larger electromechanical coupling factor, is therefore widely used in surface acoustic wave sensor.And the core of surface acoustic wave sensor is SAW resonator, yet therefore SAW resonator need to need to use the lithographic technique in MEMS micro fabrication by silica-based attenuate.Lithographic technique comprises two kinds of dry etching and wet etchings.For wet etching, pH value can be as etching liquid over 12 alkaline solution in theory.
Potassium hydroxide (KOH) wet corrosion technique is the anisotropic silicon wet corrosion technique extensively adopting at present.Due to low cost, security good, equipment cost is low, manufacturing batch is large, uniformity is better, so KOH is widely used in MEMS Bulk micro machining.But KOH also can corrode aluminium nitride in the silica-based process of corrosion; thereby silica-based positive institute needle drawing case is destroyed; therefore in corrosion process, need silica-based front to protect; the special fixture of general use is protected it at present; but fixture is not accomplished airtight completely, at the edge of sealing, have the infiltration of a small amount of corrosive liquid, once and fixture make; can only, for the substrate of fixed dimension, use limitation strong.In addition, also can buy the photoresist of special alkali corrosion resistance silica-based front is protected, but this photoresist cost is higher, and also need photoetching process, extend experimental period.Therefore need badly a kind of with low cost and can protect the silica-based silica-based thinning method for backing side of different size so that carry out the Facad structure of protection device in the process of silica-based corrosion thinning.
Summary of the invention
Technical problem to be solved by this invention is to overcome while device being carried out to silica-based attenuate in prior art, protects its positive method cost high or use the strong shortcoming of limitation, and a kind of silica-based thinning method for backing side is provided.
The technical solution adopted for the present invention to solve the technical problems is:
A silica-based thinning method for backing side, comprises the following steps:
A. be used in conjunction with raw material band and silica gel, silicon chip other surface except weakened region is treated at the back side is sealed completely;
B. after silica gel fully solidifies, adopt corrosive liquid to treat that to the silicon chip back side weakened region corrodes, make the silica-based back side treat that weakened region is thinned to desired thickness;
C., after reduction process completes, remove raw material band.
Further, steps A is specially:
A1. on wave carrier piece, splice raw material band, and silica gel is coated in to gap place, make the area of spliced raw material band be greater than the area of silicon chip;
A2. silicon chip is placed on raw material band, and silicon chip front contacts with spliced raw material band;
A3. at the silicon chip back side, treat that outside, weakened region edge applies silica gel;
A4. the outward flange of raw material band after splicing described in steps A 1 is turned over the silicon chip back side described in steps A 3 and treat that the silica gel of outside, weakened region edge coating is bonding, silicon chip other surface except weakened region is treated at the back side is sealed completely.
Concrete, step B is specially:
After at room temperature making silica gel fully solidify, in corrosive liquid, corrode certain hour, make the silica-based back side treat that weakened region is thinned to desired thickness.
Further, the KOH corrosive liquid that described corrosive liquid is 80%.
Further, described certain hour is two hours.
Concrete, step C is specially:
After reduction process completes, remove raw material band, and with tweezers, remove the silica gel of silica-based upper remnants.
The invention has the beneficial effects as follows: material is cheap and easy to get, can effectively reduce costs, material non-toxic, security is good, practical, the effective silica-based front protecting that carries out to different size, applied widely, security is good.The present invention is applicable to silica-based thinning process silica-based front is protected, and is particularly useful for applying in laboratory, shortens experimental period, reduces experimental cost.
The specific embodiment
Below in conjunction with embodiment, the present invention will be further described.
Silicon chip thinning method for backing side of the present invention, comprises the following steps: first, utilize raw material band and silica gel, silicon chip is sealed completely, only expose the back side and treat weakened region; Secondly, after silica gel fully solidifies, corrode, make the silica-based back side treat that weakened region is thinned to desired thickness; And then, after reduction process completes, remove raw material band.
Embodiment
Silicon chip thinning method for backing side in this example comprises the following steps:
One, on clean wave carrier piece, splice raw material band, and utilize silica gel to be coated in gap place, make the area of raw material band be greater than the area of silicon chip; By silica-based, be placed on raw material band, and silicon chip front contacts with raw material band;
While adopting corrosive liquid to carry out corrosion thinning to silicon chip thinning back side region; need to protect the front of silicon chip; raw material band because it is nontoxic, tasteless, there is extremely superior insulating properties, extremely strong chemical stability and good sealing property, so the present invention adopts raw material band and silica gel to be used in conjunction with the surface of other except weakened region is treated at the back side by silicon chip to seal completely.Raw material band can prevent corrosive liquid, and other surface except weakened region is treated at the back side contacts with silicon chip, thereby silicon chip front component graphics is protected.Meanwhile, raw material band and silica gel cost are all very cheap, are easy to obtain, and can effectively reduce experimental cost.
Two, at the silicon chip back side, treat that outside, weakened region edge applies silica gel;
Three, the outward flange of raw material band after splicing described in steps A 1 is turned over the silicon chip back side described in steps A 3 and treat that the silica gel of outside, weakened region edge coating is bonding, silicon chip other surface except weakened region is treated at the back side is sealed completely.
This step can reduce the coated area of silica gel, further reduces costs, owing to placing raw material band, be easy to apply silica gel, so this step step that can effectively speed operations, save experimental period.Between raw material band and raw material band, there is gap; and raw material band and treat also likely to have gap between attenuate silica-based; this step coats silica gel at these places, gap, other surface except weakened region is treated at the back side is sealed completely, thereby protected silicon chip front component graphics.
Four, after at room temperature making silica gel fully solidify, in 80% KOH corrosive liquid, corrode two hours, make the silica-based back side treat that weakened region is thinned to desired thickness.
Five, after reduction process completes, remove raw material band, and with tweezers, remove the silica gel of silica-based upper remnants.
In this method, silica gel is all coated on raw material band substantially, only has a small amount of silica gel to be coated on this device, after etching, just can be easily by most of silica gel removal as long as remove raw material band, remaining a small amount of silica gel just can be removed with tweezers, just obtains silica-based after attenuate.
Raw material band, slide and the silica gel of the method utilization cheapness are protected silica-based front, make can not destroy its Facad structure in the process of carrying out silica-based attenuate.Compared to the method for utilizing fixture protection in prior art, this method can be accomplished completely airtight, and can protect for the substrate of different size; Compared to the method for utilizing special photoresist to protect, the present invention has greatly reduced cost, has shortened experimental period, and material non-toxic, and security is good.
Claims (6)
1. a silicon chip thinning method for backing side, is characterized in that, comprises the following steps:
A. be used in conjunction with raw material band and silica gel, silicon chip other surface except weakened region is treated at the back side is sealed completely;
B. after silica gel fully solidifies, adopt corrosive liquid to treat that to the silicon chip back side weakened region corrodes, make the silica-based back side treat that weakened region is thinned to desired thickness;
C., after reduction process completes, remove raw material band.
2. silica-based thinning method for backing side as claimed in claim 1, is characterized in that, steps A is specially:
A1. on wave carrier piece, splice raw material band, and silica gel is coated in to gap place, make the area of spliced raw material band be greater than the area of silicon chip;
A2. silicon chip is placed on raw material band, and silicon chip front contacts with spliced raw material band;
A3. at the silicon chip back side, treat that outside, weakened region edge applies silica gel;
A4. the outward flange of raw material band after splicing described in steps A 1 is turned over the silicon chip back side described in steps A 3 and treat that the silica gel of outside, weakened region edge coating is bonding, silicon chip other surface except weakened region is treated at the back side is sealed completely.
3. silica-based thinning method for backing side as claimed in claim 1 or 2, is characterized in that, step B is specially: after at room temperature making silica gel fully solidify, corrode certain hour in corrosive liquid, make the silica-based back side treat that weakened region is thinned to desired thickness.
4. silica-based thinning method for backing side as claimed in claim 3, is characterized in that, the KOH corrosive liquid that described corrosive liquid is 80%.
5. silica-based thinning method for backing side as claimed in claim 3, is characterized in that, described certain hour is two hours.
6. silica-based thinning method for backing side as claimed in claim 1 or 2, is characterized in that, step C is specially: after reduction process completes, remove raw material band, and with tweezers, remove the silica gel of silica-based upper remnants.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410334894.8A CN104118844B (en) | 2014-07-15 | 2014-07-15 | Method for thinning silicon-base back surface |
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| CN201410334894.8A CN104118844B (en) | 2014-07-15 | 2014-07-15 | Method for thinning silicon-base back surface |
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| CN104118844A true CN104118844A (en) | 2014-10-29 |
| CN104118844B CN104118844B (en) | 2017-01-25 |
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Cited By (2)
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| CN105984836A (en) * | 2015-02-16 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and manufacturing method thereof |
| CN108242413A (en) * | 2016-12-27 | 2018-07-03 | 中国科学院微电子研究所 | A kind of device and method for being used to that semiconductor chip to be thinned |
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| CN105984836B (en) * | 2015-02-16 | 2021-02-26 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and manufacturing method thereof |
| CN108242413A (en) * | 2016-12-27 | 2018-07-03 | 中国科学院微电子研究所 | A kind of device and method for being used to that semiconductor chip to be thinned |
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| CN104118844B (en) | 2017-01-25 |
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Granted publication date: 20170125 Termination date: 20170715 |