CN104113293A - High-gain and low-noise differential trans-impedance amplifier - Google Patents
High-gain and low-noise differential trans-impedance amplifier Download PDFInfo
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- CN104113293A CN104113293A CN201310500689.XA CN201310500689A CN104113293A CN 104113293 A CN104113293 A CN 104113293A CN 201310500689 A CN201310500689 A CN 201310500689A CN 104113293 A CN104113293 A CN 104113293A
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Abstract
The invention provides a high-gain and low-noise differential trans-impedance amplifier. The high-gain and low-noise differential trans-impedance amplifier comprises a current mirror, an adjusting type common-emitter and common-base trans-impedance amplifier and an output common-source amplifier, wherein the adjusting type common-emitter and common-base tarns-impedance amplifier comprises a common-base amplifying unit and a negative feedback common-emitter amplifying unit; the negative feedback common-emitter amplifying unit is arranged between an emitter and a base of the common-base amplifying unit and serves as a negative feedback channel; input current is copied by the current mirror in an equal proportion manner; the current mirror provides bias voltage for the common-base amplifying unit and the negative feedback common-emitter amplifying unit; the output common-source amplifier is connected between an output end of the adjusting type common-emitter and common-base trans-impedance amplifier and an output end of the high-gain and low-noise differential trans-impedance amplifier; and trans-impedance gain is increased. By the high-gain and low-noise differential tarns-impedance amplifier, received weak signals are amplified in a high-gain and low-noise manner, bandwidth is large, and a dynamic range of inputted current signals are reasonably set; and the high-gain and low-noise differential tarns-impedance amplifier has the advantages of easiness in design and monolithic integration.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to a kind of high-gain low-noise difference trans-impedance amplifier.
Background technology
In optical fiber telecommunications system, preamplifier has significant impact to the performance of whole system such as speed, sensitivity, signal to noise ratio etc.According to the feature of biasing resistor, selectable preamplifier has three kinds: Low ESR amplifier, trans-impedance amplifier and high-impedance amplifier.Low ESR amplifier architecture is simple, be with roomy, but gain not high enough, and noise is larger, and high-impedance amplifier is highly sensitive, and noise is little, but there is the shortcoming of the little and narrow dynamic range of bandwidth, select trans-impedance amplifier, can in these performance requirements, obtain good compromise.
As shown in Figure 1, be current-mode form trans-impedance amplifier structure chart.In Fig. 1, Vdd is supply voltage, gnd be hold, I
ininput current signal, C
dthe parasitic capacitance of photodetector, V
biasbias voltage, V
outit is output voltage signal; Nmos pass transistor M
1, resistance R
1and resistance R
sform cathode-input amplifier; Nmos pass transistor M
2and resistance R
2form common-source amplifier, realize higher open-loop gain; Nmos pass transistor M
3and resistance R
3form source follower, realize input and output isolation, current potential translation and impedance transformation; R
ffor feedback resistance, provide voltage parallel negative feedback; Because cathode-input amplifier has good buffer action, make feedback resistance R
fimpact on input resistance significantly reduces.
A
V2＝g
m2R
2?(2)
Capacitor C
tcan be expressed as:
C
T＝C
D+C
gs2+C
gd1+(1+A
V2)C
gd2?(3)
Wherein, g
m2for nmos pass transistor M
2mutual conductance, C
gs2and C
gd2be respectively M
2grid-source electric capacity and grid-drain capacitance, C
gd1for nmos pass transistor M
1grid-drain capacitance.
The input resistance of current-mode form trans-impedance amplifier is larger, gains low, and noise is high, and bandwidth is little.And because input current signal is conventionally very faint, therefore require the noise of trans-impedance amplifier must be very little, thereby reduce the distortion of signal, simultaneously, thereby require trans-impedance amplifier to there is higher transimpedance gain less current signal is changed into larger voltage signal, trans-impedance amplifier must have larger bandwidth, for use in high-speed communication system.
Summary of the invention
Main purpose of the present invention is to provide a kind of high-gain low-noise difference trans-impedance amplifier, the small-signal receiving is carried out to high-gain, low noise and amplify, and bandwidth is larger, and the dynamic range of input current signal is rationally set.
In order to achieve the above object, the invention provides a kind of high-gain low-noise difference trans-impedance amplifier, comprise current mirror, adjustment type common emitter common base trans-impedance amplifier and output common-source amplifier, wherein,
Described adjustment type common emitter common base trans-impedance amplifier comprises common base amplifying unit and negative feedback common emitter amplifying unit;
Described negative feedback common emitter amplifying unit is arranged between the emitter-base bandgap grading of described common base amplifying unit and the base stage of described common base amplifying unit, as negative feedback path;
Described current mirror, copies input current for equal proportion, and provides bias voltage for described common base amplifying unit and described negative feedback common emitter amplifying unit;
Described output common-source amplifier, is connected between the output of described adjustment type common emitter common base trans-impedance amplifier and the output of described high-gain low-noise difference trans-impedance amplifier, for further increasing transimpedance gain.
When enforcement, described common base amplifying unit, described negative feedback common emitter amplifying unit and described output common-source amplifier are differential configuration.
When enforcement, described current mirror comprises input current source, the first resistance and the first nmos pass transistor;
Described input current source, anodal access supply voltage, negative pole is connected with described first resistance one end;
The other end of described the first resistance is connected with the drain electrode of described the first nmos pass transistor;
The equal ground connection of the source electrode of described the first nmos pass transistor and substrate, grid and the drain electrode of described the first nmos pass transistor link together.
When enforcement, described common base amplifying unit comprises a PMOS transistor, the 2nd PMOS transistor, the first NPN transistor, the second NPN transistor, the second nmos pass transistor and the 3rd nmos pass transistor; Described negative feedback common emitter amplifying unit comprises the second resistance, the 3rd resistance, the 3rd NPN transistor, the 4th NPN transistor and the 4th nmos pass transistor;
A described PMOS transistor and the transistorized source electrode of described the 2nd PMOS and substrate all access described supply voltage, a described PMOS transistor and the equal access control voltage of the transistorized grid of described the 2nd PMOS; The transistorized drain electrode of a described PMOS is connected with the collector electrode of described the first NPN transistor;
The second nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of described the first NPN transistor, and grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The base stage of described the first NPN transistor connects and is connected with one end of described the second resistance and the collector electrode of described the 3rd NPN transistor, and the other end of described the second resistance accesses described supply voltage;
The base stage of described the 3rd NPN transistor is connected with the emitter-base bandgap grading of described the first NPN transistor and the drain electrode of described the second nmos pass transistor respectively, and emitter-base bandgap grading is connected with the drain electrode of described the 4th nmos pass transistor;
Described the 3rd nmos pass transistor, grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The transistorized drain electrode of described the 2nd PMOS is connected with the collector electrode of described the second NPN transistor;
The 4th nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of described the second NPN transistor, and grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The base stage of described the second NPN transistor is connected with one end of described the 3rd resistance and the collector electrode of described the 4th NPN transistor respectively, and the other end of described the 3rd resistance accesses described supply voltage;
The base stage of described the 4th NPN transistor, is connected with the emitter-base bandgap grading of described the second NPN transistor and the drain electrode of described the 4th nmos pass transistor respectively, and emitter-base bandgap grading is connected with the emitter-base bandgap grading of described the 3rd NPN transistor.
When enforcement, described output common-source amplifier comprises: the 4th resistance, the 5th resistance, the 5th nmos pass transistor and the 6th nmos pass transistor;
Wherein, described supply voltage is all accessed in one end of one end of described the 4th resistance and described the 5th resistance, the other end of described the 4th resistance is connected with the drain electrode of described the 5th nmos pass transistor, the grid of described the 5th nmos pass transistor is connected with the collector electrode of the transistorized drain electrode of a described PMOS and the first NPN transistor respectively, the equal ground connection of the source electrode of described the 5th nmos pass transistor and substrate, the other end of described the 5th resistance connects the drain electrode of the 6th nmos pass transistor, the grid of described the 6th nmos pass transistor is connected with the collector electrode of the transistorized drain electrode of described the 2nd PMOS and the second NPN transistor respectively, the equal ground connection of the source electrode of described the 6th nmos pass transistor and substrate.
When enforcement, the transistorized breadth length ratio of a described PMOS is identical with the transistorized breadth length ratio of described the 2nd PMOS; The breadth length ratio of described the first NPN transistor is identical with the breadth length ratio of described the second NPN transistor; The breadth length ratio of described the 3rd NPN transistor is identical with the breadth length ratio of described the 4th NPN transistor; The breadth length ratio of described the 5th nmos pass transistor is identical with described the 6th nmos pass transistor breadth length ratio.
When enforcement, the breadth length ratio of the breadth length ratio of the breadth length ratio of described the second nmos pass transistor, described the 4th nmos pass transistor, the breadth length ratio of described the 3rd nmos pass transistor and described the first nmos pass transistor is proportional.
When enforcement, the resistance of the resistance of described the second resistance, described the 3rd resistance, the resistance of described the 4th resistance are identical with the resistance of described the 5th resistance.
Compared with prior art, high-gain low-noise difference trans-impedance amplifier of the present invention has following beneficial effect:
High-gain: owing to adopting two-stage to amplify, first order amplifier is adjustment type common emitter common base trans-impedance amplifier, and second level amplifier is common-source amplifier, thereby has realized high-gain;
Low noise: adopt differential configuration, intrinsic high cmrr can reduce the interference of power-supply fluctuation and parasitic feedback path, and can suppress Substrate Coupling Noise and temperature is floated.In addition, differential configuration is convenient to and differential configuration main amplifier cascade below and do not need single-ended-both-end change-over circuit, is easy to realize monolithic integrated;
Large bandwidth: the input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, has greatly expanded bandwidth, and adjustment type common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore better to the isolation effect of parasitic capacitance.Therefore utilize adjustment type common emitter common base form trans-impedance amplifier more can suppress the impact of photodetector parasitic capacitance on preamplifier bandwidth as the trans-impedance amplifier of input stage than the trans-impedance amplifier of other structures, simultaneously, CMOS transistor and bipolar transistor are integrated on same chip, have greatly improved the transmission rate of signal;
Simple in structure: the adjustment type common emitter common base trans-impedance amplifier that the present invention adopts is simple in structure, and pipe number is less, and does not need extra feedback resistance, has reduced power consumption and chip area.
Brief description of the drawings
Fig. 1 is the circuit diagram of the current-mode form trans-impedance amplifier of available technology adopting;
Fig. 2 is the circuit diagram of traditional RGC trans-impedance amplifier.
Fig. 3 is the circuit diagram of the high-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
As shown in Figure 2, be RGC(Regulated-Cascade, adjustment type cascade) trans-impedance amplifier circuit diagram.
In Fig. 2, Vdd is supply voltage, gnd be hold, I
ininput current signal, C
dthe parasitic capacitance of photodetector, V
outit is output voltage signal;
Compared with the current-mode form trans-impedance amplifier structure shown in Fig. 1, the RGC trans-impedance amplifier shown in Fig. 2 has increased nmos pass transistor M
band resistance R
bthe common-source amplifier forming, is used as negative feedback path, and is nmos pass transistor M
1bias voltage is provided; If M
1drain-source electric current increase, resistance R
spressure drop increase, i.e. nmos pass transistor M
bgrid voltage increase, make M
bdrain-source electric current increase, through resistance R
bafter make M
1grid voltage decline, thereby make M
1drain-source electric current reduce, realized degenerative effect, increased the stability of circuit.
The input resistance of RGC trans-impedance amplifier can be expressed as:
Can find out, the input resistance of RGC form trans-impedance amplifier is 1/ (1+g of current-mode form trans-impedance amplifier
mBr
b) doubly, g
m1nmos pass transistor M
1mutual conductance, g
mBnmos pass transistor M
bmutual conductance, input resistance reduces greatly, bandwidth obtains effective broadening; And RGC trans-impedance amplifier can provide a virtual earth input impedance, therefore better to the isolation effect of parasitic capacitance.Therefore utilize RGC trans-impedance amplifier more can suppress the impact of photodetector parasitic capacitance on preamplifier bandwidth as the trans-impedance amplifier of input stage than the trans-impedance amplifier of other structures.
The invention provides a kind of high-gain low-noise difference trans-impedance amplifier.The small-signal receiving is carried out to high-gain, low noise and amplify, bandwidth is larger, is applicable to high-speed communication system, is rationally provided with the dynamic range of input current signal, and circuit has simplicity of design and single chip integrated feature simultaneously.
High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention, comprises current mirror, adjustment type common emitter common base trans-impedance amplifier and output common-source amplifier, wherein,
Described adjustment type common emitter common base trans-impedance amplifier comprises common base amplifying unit and negative feedback common emitter amplifying unit;
Described negative feedback common emitter amplifying unit is arranged between the emitter-base bandgap grading of described common base amplifying unit and the base stage of described common base amplifying unit, as negative feedback path;
Described current mirror, copies input current for equal proportion, and provides bias voltage for described common base amplifying unit and described negative feedback common emitter amplifying unit;
Described output common-source amplifier, is connected between the output of described adjustment type common emitter common base trans-impedance amplifier and the output of described high-gain low-noise difference trans-impedance amplifier, for further increasing transimpedance gain.
High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention, adopts dual-stage amplifier, and first order amplifier is adjustment type common emitter common base trans-impedance amplifier, and second level amplifier is output common-source amplifier; Wherein, described adjustment type common emitter common base trans-impedance amplifier comprises common base amplifying unit and negative feedback common emitter amplifying unit, therefore has high-gain; And because the input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, greatly expanded bandwidth, and adjustment type common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore better to the isolation effect of parasitic capacitance; Therefore utilize adjustment type common emitter common base trans-impedance amplifier more can suppress the impact of photodetector parasitic capacitance on preamplifier bandwidth as the trans-impedance amplifier of input stage than the trans-impedance amplifier of other structures, simultaneously, CMOS transistor and bipolar transistor are integrated on same chip, have greatly improved the transmission rate of signal; High-gain low-noise difference trans-impedance amplifier described in the embodiment of the present invention is simple, and pipe number is less, and does not need extra feedback resistance, has reduced power consumption and chip area.
Preferably, described common base amplifying unit, described negative feedback common emitter amplifying unit and described output common-source amplifier are differential configuration, have reduced the interference of power-supply fluctuation and parasitic feedback path, have suppressed Substrate Coupling Noise and temperature is floated simultaneously.
Concrete, as shown in Figure 3, described current mirror comprises input current source I
in, the first resistance R
1and the first nmos pass transistor M
1;
Described input current source I
in, anodal access supply voltage Vdd, negative pole and described the first resistance R
1one end connects;
Described the first resistance R
1the other end and described the first nmos pass transistor M
1drain electrode connect;
Described the first nmos pass transistor M
1source electrode and the equal earth terminal gnd of substrate, described the first nmos pass transistor M
1grid and drain electrode link together.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, described common base amplifying unit comprises a PMOS transistor P
1, the 2nd PMOS transistor P
2, the first NPN transistor Q
1, the second NPN transistor Q
2, the second nmos pass transistor M
2and the 3rd nmos pass transistor M
3; Described negative feedback common-source amplifier comprises the second resistance R
2, the 3rd resistance R
3, the 3rd NPN transistor Q
3, the 4th NPN transistor Q
4and the 4th nmos pass transistor M
4;
A described PMOS transistor P
1with described the 2nd PMOS transistor P
2source electrode and substrate all access described supply voltage Vdd, a described PMOS transistor P
1with described the 2nd PMOS transistor P
2the equal access control voltage of grid V
c; A described PMOS transistor P
1drain electrode and described the first NPN transistor Q
1collector electrode connect;
The second nmos pass transistor M
2, drain electrode and described the first NPN transistor Q
1emitter-base bandgap grading connect, grid and described the first nmos pass transistor M
1grid connect, the equal earth terminal gnd of source electrode and substrate;
Described the first NPN transistor Q
1base stage connect with described the second resistance R
2one end and described the 3rd NPN transistor Q
3collector electrode connect, described the second resistance R
2the other end access described supply voltage Vdd;
Described the 3rd NPN transistor Q
3base stage respectively with described the first NPN transistor Q
1emitter-base bandgap grading and described the second nmos pass transistor M
2drain electrode connect, source electrode and described the 4th nmos pass transistor M
4drain electrode connect;
Described the 3rd nmos pass transistor M
3, grid and described the first nmos pass transistor M
1grid connect, the equal earth terminal gnd of source electrode and substrate;
Described the 2nd PMOS transistor P
2drain electrode and described the second NPN transistor Q
2collector electrode connect;
The 4th nmos pass transistor M
4, drain electrode and described the second NPN transistor Q
2emitter-base bandgap grading connect, the first nmos pass transistor M described in grid
1grid connect, the equal earth terminal gnd of source electrode and substrate;
Described the second NPN transistor Q
2base stage respectively with described the 3rd resistance R
3one end and described the 4th NPN transistor Q
4collector electrode connect, described the 3rd resistance R
3the other end access described supply voltage Vdd;
Described the 4th NPN transistor Q
4base stage, respectively with described the second NPN transistor Q
2emitter-base bandgap grading and described the 4th nmos pass transistor M
4drain electrode connect, source electrode and described the 3rd NPN transistor Q
3emitter-base bandgap grading connect.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, described output common-source amplifier comprises R
4, the 5th resistance R
5, the 5th nmos pass transistor M
5and the 6th nmos pass transistor M
6;
Wherein, described the 4th resistance R
4one end and described the 5th resistance R
5one end all access described supply voltage Vdd, described the 4th resistance R
4the other end and described the 5th nmos pass transistor M
5drain electrode connect, described the 5th nmos pass transistor M
5grid respectively with a described PMOS transistor P
1drain electrode and the first NPN transistor Q
1collector electrode connect, described the 5th nmos pass transistor M
5source electrode and the equal ground connection of substrate, described the 5th resistance R
5the other end connect the 6th nmos pass transistor M
6drain electrode, described the 6th nmos pass transistor M
6grid respectively with described the 2nd PMOS transistor P
2drain electrode and the second NPN transistor Q
2collector electrode connect, described the 6th nmos pass transistor M
6source electrode and the equal earth terminal gnd of substrate.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, a described PMOS transistor P
1breadth length ratio and described the 2nd PMOS transistor P
2breadth length ratio identical; Described the first NPN transistor Q
1breadth length ratio and described the second NPN transistor Q
2breadth length ratio identical; Described the 3rd NPN transistor Q
3breadth length ratio and described the 4th NPN transistor Q
4breadth length ratio identical; Described the 5th nmos pass transistor M
5breadth length ratio and described the 6th nmos pass transistor M
6breadth length ratio is identical.
In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, the breadth length ratio of described the second nmos pass transistor M2, the breadth length ratio of described the 4th nmos pass transistor M4, the breadth length ratio of described the 3rd nmos pass transistor M3 and the breadth length ratio of described the first nmos pass transistor M1 are proportional.In the high-gain low-noise difference trans-impedance amplifier shown in Fig. 3, described the second resistance R
2resistance, described the 3rd resistance R
3resistance, described the 4th resistance R
4resistance and described the 5th resistance R
5resistance identical.
Compared with Fig. 2, in Fig. 3, the embodiment of the present invention adopts nmos pass transistor M
2and M
3replace the source series resistance R in traditional RGC trans-impedance amplifier cathode-input amplifier
s, by adjusting M
2and M
3breadth length ratio realize different conducting resistance, be more conducive to integrated chip; Adopt NPN transistor Q1, Q2, Q3 and Q4 to replace corresponding nmos pass transistor, improved the speed of circuit; Adopt differential configuration, reduced the interference of power-supply fluctuation and parasitic feedback path, suppressed Substrate Coupling Noise and temperature is floated simultaneously.
The present invention can carry out high-gain, low noise to the small-signal receiving and amplify, and bandwidth is larger, is applicable to high-speed communication system, is rationally provided with the dynamic range of input current signal, and circuit has simplicity of design and single chip integrated feature simultaneously.
The solution of the present invention can be carried out high-gain, low noise to the small-signal receiving and be amplified, and bandwidth is larger, is applicable to high-speed communication system, is rationally provided with the dynamic range of input current signal, and circuit has simplicity of design and single chip integrated feature simultaneously.
High-gain low-noise difference trans-impedance amplifier tool described in the embodiment of the present invention has the following advantages:
High-gain: adopt two-stage to amplify, first order amplifier is adjustment type common emitter common base trans-impedance amplifier, second level amplifier is output common-source amplifier; Wherein, adjustment type common emitter common base form trans-impedance amplifier comprises common base amplifying unit and negative feedback common source amplifying unit; The one PMOS transistor, the 2nd PMOS transistor, the first NPN transistor, the second NPN transistor, the second nmos pass transistor and the 3rd nmos pass transistor form common base amplifying unit, and input current signal is tentatively amplified and changes into voltage signal; The second resistance, the 3rd resistance, the 3rd NPN transistor, the 4th NPN transistor and the 4th nmos pass transistor form negative feedback common emitter amplifying unit, as negative feedback path, have improved the stability of circuit; The 4th resistance, the 5th resistance, the 5th nmos pass transistor and the 6th nmos pass transistor form common-source amplifier, the voltage signal transforming is further amplified, thereby realized high-gain;
Low noise: adopt differential configuration, intrinsic high cmrr can reduce the interference of power-supply fluctuation and parasitic feedback path, and can suppress Substrate Coupling Noise and temperature is floated.In addition, differential configuration is convenient to and differential configuration main amplifier cascade below and do not need single-ended-both-end change-over circuit, is easy to realize monolithic integrated;
Large bandwidth: the input resistance of adjustment type common emitter common base trans-impedance amplifier is minimum, has greatly expanded bandwidth, and adjustment type common emitter common base trans-impedance amplifier can provide a virtual earth input impedance, therefore better to the isolation effect of parasitic capacitance.Therefore utilize adjustment type common emitter common base trans-impedance amplifier more can suppress the impact of photodetector parasitic capacitance on preamplifier bandwidth as the trans-impedance amplifier of input stage than the trans-impedance amplifier of other structures, simultaneously, by CMOS(Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductors (CMOS)) transistor and bipolar transistor be integrated on same chip, greatly improved the transmission rate of signal;
Simple in structure: the adjustment type common emitter common base trans-impedance amplifier that the present invention adopts is simple in structure, and pipe number is less, and does not need extra feedback resistance, has reduced power consumption and chip area.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. a high-gain low-noise difference trans-impedance amplifier, is characterized in that, comprises current mirror, adjustment type common emitter common base trans-impedance amplifier and output common-source amplifier, wherein,
Described adjustment type common emitter common base trans-impedance amplifier comprises common base amplifying unit and negative feedback common emitter amplifying unit;
Described negative feedback common emitter amplifying unit is arranged between the emitter-base bandgap grading of described common base amplifying unit and the base stage of described common base amplifying unit, as negative feedback path;
Described current mirror, copies input current for equal proportion, and provides bias voltage for described common base amplifying unit and described negative feedback common emitter amplifying unit;
Described output common-source amplifier, is connected between the output of described adjustment type common emitter common base trans-impedance amplifier and the output of described high-gain low-noise difference trans-impedance amplifier, for further increasing transimpedance gain.
2. high-gain low-noise difference trans-impedance amplifier as claimed in claim 1, is characterized in that,
Described common base amplifying unit, described negative feedback common emitter amplifying unit and described output common-source amplifier are differential configuration.
3. high-gain low-noise difference trans-impedance amplifier as claimed in claim 2, is characterized in that,
Described current mirror comprises input current source, the first resistance and the first nmos pass transistor;
Described input current source, anodal access supply voltage, negative pole is connected with described first resistance one end;
The other end of described the first resistance is connected with the drain electrode of described the first nmos pass transistor;
The equal ground connection of the source electrode of described the first nmos pass transistor and substrate, grid and the drain electrode of described the first nmos pass transistor link together.
4. high-gain low-noise difference trans-impedance amplifier as claimed in claim 3, it is characterized in that, described common base amplifying unit comprises a PMOS transistor, the 2nd PMOS transistor, the first NPN transistor, the second NPN transistor, the second nmos pass transistor and the 3rd nmos pass transistor; Described negative feedback common emitter amplifying unit comprises the second resistance, the 3rd resistance, the 3rd NPN transistor, the 4th NPN transistor and the 4th nmos pass transistor;
A described PMOS transistor and the transistorized source electrode of described the 2nd PMOS and substrate all access described supply voltage, a described PMOS transistor and the equal access control voltage of the transistorized grid of described the 2nd PMOS; The transistorized drain electrode of a described PMOS is connected with the collector electrode of described the first NPN transistor;
The second nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of described the first NPN transistor, and grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The base stage of described the first NPN transistor connects and is connected with one end of described the second resistance and the collector electrode of described the 3rd NPN transistor, and the other end of described the second resistance accesses described supply voltage;
The base stage of described the 3rd NPN transistor is connected with the emitter-base bandgap grading of described the first NPN transistor and the drain electrode of described the second nmos pass transistor respectively, and emitter-base bandgap grading is connected with the drain electrode of described the 4th nmos pass transistor;
Described the 3rd nmos pass transistor, grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The transistorized drain electrode of described the 2nd PMOS is connected with the collector electrode of described the second NPN transistor;
The 4th nmos pass transistor, drain electrode is connected with the emitter-base bandgap grading of described the second NPN transistor, and grid is connected with the grid of described the first nmos pass transistor, the equal ground connection of source electrode and substrate;
The base stage of described the second NPN transistor is connected with one end of described the 3rd resistance and the collector electrode of described the 4th NPN transistor respectively, and the other end of described the 3rd resistance accesses described supply voltage;
The base stage of described the 4th NPN transistor, is connected with the emitter-base bandgap grading of described the second NPN transistor and the drain electrode of described the 4th nmos pass transistor respectively, and emitter-base bandgap grading is connected with the emitter-base bandgap grading of described the 3rd NPN transistor.
5. high-gain low-noise difference trans-impedance amplifier as claimed in claim 4, is characterized in that,
Described output common-source amplifier comprises: the 4th resistance, the 5th resistance, the 5th nmos pass transistor and the 6th nmos pass transistor;
Wherein, described supply voltage is all accessed in one end of one end of described the 4th resistance and described the 5th resistance, the other end of described the 4th resistance is connected with the drain electrode of described the 5th nmos pass transistor, the grid of described the 5th nmos pass transistor is connected with the collector electrode of the transistorized drain electrode of a described PMOS and the first NPN transistor respectively, the equal ground connection of the source electrode of described the 5th nmos pass transistor and substrate, the other end of described the 5th resistance connects the drain electrode of the 6th nmos pass transistor, the grid of described the 6th nmos pass transistor is connected with the collector electrode of the transistorized drain electrode of described the 2nd PMOS and the second NPN transistor respectively, the equal ground connection of the source electrode of described the 6th nmos pass transistor and substrate.
6. high-gain low-noise difference trans-impedance amplifier according to claim 5, is characterized in that,
The transistorized breadth length ratio of a described PMOS is identical with the transistorized breadth length ratio of described the 2nd PMOS; The breadth length ratio of described the first NPN transistor is identical with the breadth length ratio of described the second NPN transistor; The breadth length ratio of described the 3rd NPN transistor is identical with the breadth length ratio of described the 4th NPN transistor; The breadth length ratio of described the 5th nmos pass transistor is identical with described the 6th nmos pass transistor breadth length ratio.
7. high-gain low-noise difference trans-impedance amplifier according to claim 6, it is characterized in that, the breadth length ratio of described the second nmos pass transistor, the breadth length ratio of described the 4th nmos pass transistor, the breadth length ratio of described the 3rd nmos pass transistor and the breadth length ratio of described the first nmos pass transistor are proportional.
8. high-gain low-noise difference trans-impedance amplifier according to claim 7, is characterized in that, the resistance of the resistance of described the second resistance, the resistance of described the 3rd resistance, described the 4th resistance is identical with the resistance of described the 5th resistance.
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