CN104051052A - Trench isolation type alpha irradiation battery with PIN type GaN extension layer and manufacturing method - Google Patents
Trench isolation type alpha irradiation battery with PIN type GaN extension layer and manufacturing method Download PDFInfo
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- CN104051052A CN104051052A CN201410301094.6A CN201410301094A CN104051052A CN 104051052 A CN104051052 A CN 104051052A CN 201410301094 A CN201410301094 A CN 201410301094A CN 104051052 A CN104051052 A CN 104051052A
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Abstract
The invention discloses a trench isolation type alpha irradiation battery with a PIN type GaN extension layer and a manufacturing method. The PIN type alpha irradiation battery mainly solves the problem that the output voltage of an existing silicon carbide PIN junction alpha irradiation battery is limited. The PIN type alpha irradiation battery comprises a PIN junction, trenches (9), an alpha irradiation source layer (8) and metal bonding parts (5). The PIN junction is provided with a P type epitaxial layer ohmic contact electrode (6), the P type epitaxial layer (2), an N type epitaxial layer (3), an N type SiC substrate (4) and an N type ohmic contact electrode (7) from top to bottom. The trenches are formed in the left side and the right side of the upper portion of the PIN junction. The alpha irradiation source layer is located above the P type epitaxial layer ohmic contact electrode. The metal bonding parts are located on the left side and the right side of the alpha irradiation source layer, and the lower surface of each bonding part makes full contact with the P type epitaxial layer ohmic contact electrode. The PIN type alpha irradiation battery has the advantages that the contact area of an irradiation source and a semiconductor is large, the utilization rate of nuclear raw materials and the collecting rate of energy are high, and the output voltage of the battery is large, and power can be continuously supplied to micro circuits.
Description
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically PIN type alpha irradiation battery of a kind of silicon carbide-based trench isolations formula extension GaN and preparation method thereof, can be used for the small circuit such as minute mechanical and electrical system and Aero-Space, deep-sea, polar region etc. needs long-term power supply and unattended occasion.
Technical background
Along with people are for the demand of low-power consumption, long-life, high reliability and small size power-supply unit, and concern to nuclear waste disposal, minisize nuclear battery becomes more and pays close attention to.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, solve at space flight and aviation field micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three found by Rappaport research, and beta (β-Particle) radial energy that utilizes isotope to decay to produce produces electron-hole pair in semiconductor, and this phenomenon is called as β-Voltaic Effect.Nineteen fifty-seven, first Elgin-Kidde is used in power supply supply side by β-Voltaic Effect, successfully produces first radioisotope micro battery β-Voltaic Battery.From 2006, along with the progress of semiconductor material with wide forbidden band SiC preparation and technology, there is the relevant report of the radioisotope micro battery based on SiC.Nuclear battery is in application, and because the high energy particle utilization factor exciting is lower, collection of energy rate is low, has limited the output voltage of battery.
As a kind of important third generation semiconductor, people are more and more to the concern of GaN in recent years.Because its energy gap is large, thermal conductivity is high, and device working temperature and the voltage breakdown of making are high.In addition, GaN material is considered to a kind of desirable anti-irradiation semiconductor material always, and along with the development of nuclear technology and space technology, GaN material and device thereof are used to work under the very strong exceedingly odious condition of radiation.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the nuclear battery projectile energy loss of this structure is large, and energy conversion efficiency is lower.
Document " Demonstration of a4H SiC betavoltaic cell " has been introduced the C.I.Tomas by USA New York Cornell university, M.V.S.Chandrashekhar, and the people such as Hui Li have proposed silit PN junction formula nuclear battery.The substrate that this structure adopts is the highly doped substrate of P type, and immature in the existing technique of its Grown epitaxial loayer, therefore, easily introduces surface imperfection, and device creepage is large, and energy conversion rate is lower.
Document " Demonstration of a tadiation resistant; hight efficiency SiC betavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced the output current of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, propose PIN type alpha irradiation battery of a kind of trench isolations formula extension GaN and preparation method thereof, to improve the utilization factor of αsource, thus output current and the output voltage of raising battery.
Technical scheme of the present invention is achieved in that
One. the PIN type alpha irradiation battery of trench isolations formula extension GaN of the present invention, comprise: PIN knot, groove 9, αsource layer 8, metallic bonding portion 5, PIN knot comprises from top to bottom successively: P type epitaxial loayer Ohm contact electrode 6, P type epitaxial loayer 2, N-type epitaxial loayer 3, N-type SiC substrate 4 and N-type Ohm contact electrode 7, is characterized in that:
Described P type epitaxial loayer 2, the GaN material of employing direct band gap, to improve the output voltage of battery;
Described αsource layer 8, is positioned at the top of P type epitaxial loayer Ohm contact electrode 6;
Described groove 9, is positioned at PIN and ties the left and right sides partly, and sidewall and the bottom of each groove are deposited with Si
3n
4passivation layer 1;
Metallic bonding portion 5, is positioned at the left and right sides of αsource layer 8, contacts completely below each bonding part with P type epitaxial loayer Ohm contact electrode 6.
As preferably, it is the plutonium element that 241 americium element or relative atomic mass are 238 that described αsource layer 8 adopts relative atomic mass, i.e. Am
241or Pu
238.
As preferably, the thickness of described P type epitaxial loayer 2 is 0.2～0.3 μ m, and doping content is 2 × 10
19～6 × 10
19cm
-3; The thickness of N-type epitaxial loayer 3 is 5～10 μ m, and doping content is 2 × 10
15～4 × 10
15cm
-3; The doping content of N-type SiC substrate 4 is 8 × 10
17cm
-3.
As preferably, described N-type epitaxial loayer 3 and N-type SiC substrate 4 are 4H-SiC material, to improve serviceable life and the open-circuit voltage of battery, have solved the poor problem of GaN material heat dispersion simultaneously.
As preferably, it is the Al metal level of 30nm that described P type epitaxial loayer Ohm contact electrode 6 is selected thickness, to reduce the barrier effect of metal contact layer to incident high-energyα-particle, improves and raw material availability.
As preferably, described metallic bonding portion 5 selects Ti/Au alloy, and its thickness is 100nm/200nm.
As preferably, described N-type Ohm contact electrode 7 is Ni/Ti/Au alloy, and its thickness is respectively 200nm/50nm/250nm.
Two. preparation method of the present invention comprises the following steps:
(1) utilizing chemical vapor deposition CVD method is 2x10 in N-type SiC substrate surface epitaxial growth one deck doping content
15～4x10
15cm
-3, thickness is the N-type epitaxial loayer of the SiC of 5～10 μ m;
(2) utilizing chemical vapor deposition CVD method is 2x10 in N-type epi-layer surface epitaxial growth one deck doping content
19～6x10
19cm
-3, thickness is the P type epitaxial loayer of the GaN of 0.2～0.3 μ m;
(3) utilize inductively coupled plasma ICP lithographic technique on P type epitaxial loayer, to etch 5 μ m dark, the wide isolated groove of 30～50 μ m, to realize the mutual isolation between device;
(4) adopt low pressure hot wall CVD (Chemical Vapor Deposition) method, at sidewall and the thick Si of bottom deposit 30～50nm of above-mentioned groove
3n
4passivation layer;
(5) complete the N-type SiC substrate face gluing of above-mentioned technique, making the window of P type Ohm contact electrode by lithography, the Al metal level that then deposit 30nm is thick thereon is also peeled off and is removed photoresist, and obtains P type Ohm contact electrode;
(6) utilize electron-beam vapor deposition method at the not back side deposit Ni/Ti/Au metal level of extension of N-type SiC substrate, as N-type Ohm contact electrode;
(7) on P type epitaxial loayer Ohm contact electrode gluing and above it the right and left make window by lithography, then deposit Ti metal level and Au metal level successively, removing photoresist to peel off forms metallic bonding portion;
(8) to completing the N-type SiC substrate high temperature rapid thermal annealing of above-mentioned technique;
(9) on P type Ohm contact electrode, pass through electron-beam vapor deposition method or optionally deposit αsource layer of magnetron sputtering method, complete the making of battery.
The present invention compared with prior art tool has the following advantages:
1. irradiation battery of the present invention, selects that energy gap is larger and for the GaN material of direct band gap is as P type epitaxial loayer, technique is simple, and can improve the output voltage of alpha irradiation battery.
2. irradiation battery of the present invention, adopts 4H-SiC as material of main part.Compare to traditional Si, the energy gap of its material itself is large, and radiation-resisting performance is more excellent, can effectively resist the damage of high-energyα-particle to device, therefore can improve the operating voltage of battery, extends battery simultaneously.
3. the present invention, owing to having selected thinner Al metal level as P type Ohm contact electrode, can reduce the barrier effect of metal level to alpha projectile, improves αsource utilization ratio.
Brief description of the drawings
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of the PIN type alpha irradiation battery of trench isolations formula extension GaN of the present invention;
Fig. 3 is the schematic flow sheet that the present invention makes the PIN type alpha irradiation battery of trench isolations formula extension GaN.
Embodiment
With reference to Fig. 2, the PIN type alpha irradiation battery of trench isolations formula extension GaN of the present invention, comprise: PIN knot, groove 9, αsource layer 8, metallic bonding portion 5, PIN knot comprises: P type epitaxial loayer Ohm contact electrode 6, P type epitaxial loayer 2, N-type epitaxial loayer 3, N-type SiC substrate 4 and N-type Ohm contact electrode 7, wherein:
It is the Al metal level of 30nm that P type epitaxial loayer Ohm contact electrode 6 is selected thickness; The thickness of P type epitaxial loayer 2 is 0.2～0.3 μ m, and doping content is 2 × 10
19～6 × 10
19cm
-3, it is positioned at P type epitaxial loayer Ohm contact electrode below; The thickness of N-type epitaxial loayer 3 is 5～10 μ m, and doping content is 2 × 10
15～4 × 10
15cm
-3, it is positioned at the below of P type epitaxial loayer 2; The doping content of N-type SiC substrate 4 is 8 × 10
17cm
-3, it is positioned at the below of N-type epitaxial loayer 3; N-type Ohm contact electrode 7 is respectively the Ni/Ti/Au alloy of 200nm/50nm/250nm for thickness, and it is positioned at the below of N-type SiC substrate 4.
Groove 9, the degree of depth is 5 μ m, and width is 30～50 μ m, lays respectively at PIN and ties the left and right sides partly, and sidewall and the bottom of each groove are deposited with Si
3n
4passivation layer 1;
αsource layer 8 is positioned at the top of P type epitaxial loayer Ohm contact electrode 6, the plutonium element that the americium element that its employing relative atomic mass is 241 or relative atomic mass are 238, i.e. Am
241or Pu
238.
Metallic bonding portion 5 is the Ti/Au alloy of thickness 100nm/200nm, is positioned at the left and right sides of αsource layer 8, contacts completely below each bonding part with P type epitaxial loayer Ohm contact electrode 6.
Under device duty, the high-energyα-particle radiating from αsource 8 is through P type epitaxial loayer Ohm contact electrode 6, at semiconductor internal excitation charge carrier, these charge carriers are separated with near built-in field N-type epitaxial loayer 3 borders by P type epitaxial loayer 2, finally form output current.
With reference to Fig. 3, the method that the present invention makes the PIN type alpha irradiation battery of trench isolations formula extension GaN provides following three embodiment:
Embodiment 1, preparing αsource layer is Am
241, the PIN type alpha irradiation battery of the trench isolations formula extension GaN of groove width 30 μ m.
Step 1: growth N-type epitaxial loayer, as shown in Figure 3 a.
Utilizing chemical vapor deposition CVD method is 8 × 10 in doping content
17cm
-3the low-doped N-type SiC epitaxial loayer of N-type SiC substrate surface epitaxial growth one deck.Its process conditions are: epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 2x10
15cm
-3, thickness is the N-type epitaxial loayer of 5 μ m.
Step 2: growing P-type epitaxial loayer, as shown in Figure 3 b.
The highly doped P type GaN epitaxial loayer that utilizes the doping of chemical vapor deposition CVD method epitaxial growth aluminium on the N-type epitaxial loayer of growth, its process conditions are: first the N-type SiC substrate of growth N-type epitaxial loayer is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 DEG C, keep 10min; Then the pressure of reaction chamber is made as to 200mbar, uses N
2and H
2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber
-1and 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on SiC epitaxial loayer; Finally reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1triethyl-gallium, NH
3and CP
2mg, completing magnesium doping content is 2x10
19cm
-3, thickness is the P type epitaxial loayer of 0.2 μ m.
Step 3: etching groove, as shown in Figure 3 c.
Gluing on P type epitaxial loayer, makes P type epitaxial loayer both sides window by lithography, utilizes inductively coupled plasma ICP lithographic technique under said two windows, to etch 5 μ m dark, the wide isolated groove of 30 μ m, thus realize the mutual isolation between device;
Step 4: deposit Si
3n
4passivation layer, as shown in Figure 3 d.
Adopt low pressure hot wall CVD (Chemical Vapor Deposition) method, at sidewall and the thick Si of bottom deposit 30nm of above-mentioned groove
3n
4passivation layer; Ultrasound wave is peeled off the photoresist on P type epitaxial loayer.
Step 5: make P type epitaxial loayer Ohm contact electrode, as shown in Figure 3 e.
Complete the N-type SiC substrate face gluing of above-mentioned technique, making the window of P type Ohm contact electrode by lithography, the Al metal level that then deposited metal 30nm is thick is also peeled off and is removed photoresist, and obtains P type epitaxial loayer Ohm contact electrode.
Step 6: make N-type Ohm contact electrode, as shown in Fig. 3 f.
Utilize electron-beam vapor deposition method at the not back side Ni metal level that deposition thickness is 200nm successively, the Ti metal level of thickness 50nm, the Au metal level of thickness 250nm of extension of N-type SiC substrate, as N-type Ohm contact electrode;
Step 7: make metallic bonding portion, as Fig. 3 g.
On P type epitaxial loayer Ohm contact electrode gluing and above it the right and left make window by lithography, the Ti metal level Au metal thick with 200nm that then deposit 100nm is thick successively becomes, remove photoresist peel off formation metallic bonding portion;
Step 8: substrate annealing.
To the N-type SiC substrate that completes above-mentioned technique high temperature rapid thermal annealing 5 minutes at 850 DEG C, sintering Ohm contact electrode.
Step 9: deposit αsource layer, as shown in Fig. 3 h.
Completing the N-type SiC substrate face gluing of above-mentioned technique, make two windows between metallic bonding portion by lithography, expose P type epitaxial loayer Ohm contact electrode, deposited by electron beam evaporation method deposit radioactive source on this P type epitaxial loayer Ohm contact electrode is Am
241αsource layer, finally remove photoresist, complete the making of battery.
Embodiment 2, preparing αsource layer is Am
241, the PIN type alpha irradiation battery of the trench isolations formula extension GaN of groove width 40 μ m.
Step 1: utilizing chemical vapor deposition CVD method is 8 × 10 in doping content
17cm
-3the low-doped N-type SiC epitaxial loayer of N-type SiC substrate surface epitaxial growth one deck.Its process conditions are: epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 3x10
15cm
-3, thickness is the N-type epitaxial loayer of 7 μ m, as shown in Figure 3 a.
Step 2: utilize the highly doped P type GaN epitaxial loayer of chemical vapor deposition CVD method epitaxial growth aluminium doping on the N-type epitaxial loayer of growth, as Fig. 3 b, its process conditions are:
The highly doped P type GaN epitaxial loayer that utilizes the doping of chemical vapor deposition CVD method epitaxial growth aluminium on the N-type epitaxial loayer of growth, its process conditions are: first the N-type SiC substrate of growth N-type epitaxial loayer is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100 DEG C, keep 10min; Then the pressure of reaction chamber is made as to 200mbar, uses N
2and H
2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber
-1and 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on SiC epitaxial loayer; Finally reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1triethyl-gallium, NH
3and CP
2mg, completing magnesium doping content is 4x10
19cm
-3, thickness is the P type epitaxial loayer of 0.25 μ m.
Step 3: gluing on P type epitaxial loayer, make P type epitaxial loayer both sides window by lithography, utilize inductively coupled plasma ICP lithographic technique under said two windows, to etch 5 μ m dark, the wide isolated groove of 40 μ m, thereby realize the mutual isolation between device, as shown in Figure 3 c;
Step 4: deposit Si
3n
4passivation layer.
Adopt low pressure hot wall CVD (Chemical Vapor Deposition) method, at sidewall and the thick Si of bottom deposit 40nm of above-mentioned groove
3n
4passivation layer; Ultrasound wave is peeled off the photoresist on P type epitaxial loayer, as shown in Figure 3 d.
Step 5: make P type epitaxial loayer Ohm contact electrode, as shown in Figure 3 e:
This step is identical with the step 5 of embodiment mono-.
Step 6: make N-type Ohm contact electrode, as shown in Fig. 3 f:
This step is identical with the step 6 of embodiment mono-.
Step 7: make metallic bonding portion, as shown in Fig. 3 g:
This step is identical with the step 7 of embodiment mono-.
Step 8: to the N-type SiC substrate that completes above-mentioned technique high temperature rapid thermal annealing 3 minutes at 900 DEG C, sintering Ohm contact electrode.
Step 9: completing the N-type SiC substrate face gluing of above-mentioned technique, make two windows between metallic bonding portion by lithography, expose P type epitaxial loayer Ohm contact electrode, with magnetron sputtering method deposit radioactive source on this P type epitaxial loayer Ohm contact electrode be Am
241αsource layer, finally remove photoresist, complete the making of battery, as shown in Fig. 3 h.
Embodiment 3, preparing αsource layer is Pu
238, groove width is the PIN type alpha irradiation battery of the trench isolations formula extension GaN of 50 μ m.
Steps A: growth N-type epitaxial loayer, as shown in Figure 3 a:
Utilizing chemical vapor deposition CVD method is 8 × 10 in doping content
17cm
-3the low-doped N-type SiC epitaxial loayer of N-type SiC substrate surface epitaxial growth one deck.Its process conditions are: epitaxial temperature is 1550 DEG C, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen, and obtaining nitrogen doped concentration is 4x10
15cm
-3, thickness is the N-type epitaxial loayer of 10 μ m.
Step B: growing P-type epitaxial loayer, as shown in Figure 3 b:
The highly doped P type GaN epitaxial loayer that utilizes the doping of chemical vapor deposition CVD method epitaxial growth aluminium on the N-type epitaxial loayer of growth, its process conditions are: first the N-type SiC substrate of growth N-type epitaxial loayer is put into chemical vapor deposition CVD stove, at H
2under atmosphere, be heated to 1100
0c, keeps 10min; Then the pressure of reaction chamber is made as to 200mbar, uses N
2and H
2mixed gas as carrier gas, be respectively 52.3 μ molmin to passing into flow in reaction chamber
-1and 0.035molmin
-1trimethyl aluminium and NH
3, the thick AlN of 60nm grows on SiC epitaxial loayer; Finally reaction chamber is cooled to 1050 DEG C, is respectively 6.5 μ molmin to passing into flow in reaction chamber
-1, 8.93mmolmin
-1with 0.18 μ molmin
-1triethyl-gallium, NH
3and CP
2mg, completing magnesium doping content is 6x10
19cm
-3, thickness is the P type epitaxial loayer of 0.3 μ m.
Step C: etching groove, as shown in Figure 3 c:
Gluing on P type epitaxial loayer, makes P type epitaxial loayer both sides window by lithography, utilizes inductively coupled plasma ICP lithographic technique under said two windows, to etch 5 μ m dark, the wide isolated groove of 50 μ m, thus realize the mutual isolation between device;
Step D: deposit Si
3n
4passivation layer, as shown in Figure 3 d:
Adopt low pressure hot wall CVD (Chemical Vapor Deposition) method, at sidewall and the thick Si of bottom deposit 50nm of above-mentioned groove
3n
4passivation layer; Ultrasound wave is peeled off the photoresist on P type epitaxial loayer.
Step e: make P type epitaxial loayer Ohm contact electrode, as shown in Figure 3 e:
This step is identical with the step 5 of embodiment mono-.
Step F: make N-type Ohm contact electrode, as shown in Fig. 3 f:
This step is identical with the step 6 of embodiment mono-.
Step G: make metallic bonding portion, as shown in Fig. 3 g:
This step is identical with the step 7 of embodiment mono-.
Step H: substrate annealing.
To the N-type SiC substrate that completes above-mentioned technique high temperature rapid thermal annealing 3 minutes at 950 DEG C, sintering Ohm contact electrode.
Step I: deposit αsource layer, as shown in Fig. 3 h:
Completing the N-type SiC substrate face gluing of above-mentioned technique, make two windows between metallic bonding portion by lithography, expose P type epitaxial loayer Ohm contact electrode, deposited by electron beam evaporation method deposit radioactive source on this P type epitaxial loayer Ohm contact electrode is Pu
238αsource layer, finally remove photoresist, complete the making of battery.
Claims (8)
1. the PIN type alpha irradiation battery of a trench isolations formula extension GaN, comprise: PIN knot, groove (9), αsource layer (8), metallic bonding portion (5), PIN knot comprises from top to bottom successively: P type epitaxial loayer Ohm contact electrode (6), P type epitaxial loayer (2), N-type epitaxial loayer (3), N-type SiC substrate (4) and N-type Ohm contact electrode (7), is characterized in that:
Described P type epitaxial loayer (2), the GaN material of employing direct band gap, to improve the output voltage of battery;
Described αsource layer (8), is positioned at the top of P type epitaxial loayer Ohm contact electrode (6);
Described groove (9), is positioned at PIN and ties the left and right sides partly, and sidewall and the bottom of each groove are deposited with Si
3n
4passivation layer (1);
Metallic bonding portion (5), is positioned at the left and right sides of αsource layer (8), contacts completely below each bonding part with P type epitaxial loayer Ohm contact electrode (6).
2. alpha irradiation battery according to claim 1, is characterized in that αsource layer (8) to adopt relative atomic mass is 241 the plutonium element that americium element or relative atomic mass are 238, i.e. Am
241or Pu
238.
3. alpha irradiation battery according to claim 1, the thickness that it is characterized in that P type epitaxial loayer (2) is 0.2～0.3 μ m, doping content is 2 × 10
19～6 × 10
19cm
-3; The thickness of N-type epitaxial loayer (3) is 5～10 μ m, and doping content is 2 × 10
15～4 × 10
15cm
-3; The doping content of N-type SiC substrate (4) is 8 × 10
17cm
-3.
4. alpha irradiation battery according to claim 1, it is characterized in that N-type epitaxial loayer (3) and N-type SiC substrate (4) are 4H-SiC material, to improve serviceable life and the open-circuit voltage of battery, solved the poor problem of GaN material heat dispersion simultaneously.
5. alpha irradiation battery according to claim 1, is characterized in that P type epitaxial loayer Ohm contact electrode (6) adopts the Al metal level that thickness is 30nm, to reduce the barrier effect of metal contact layer to incident high-energyα-particle, improves raw material availability.
6. alpha irradiation battery according to claim 1, is characterized in that metallic bonding portion (5) selects Ti/Au alloy, and its thickness is 100nm/200nm.
7. alpha irradiation battery according to claim 1, is characterized in that described N-type Ohm contact electrode (7) adopts Ni/Ti/Au alloy, and its thickness is respectively 200nm/50nm/250nm.
8. a preparation method for the PIN type alpha irradiation battery of trench isolations formula extension GaN, comprises the following steps:
(1) utilizing chemical vapor deposition CVD method is 2x10 in N-type SiC substrate surface epitaxial growth one deck doping content
15～4x10
15cm
-3, thickness is the N-type epitaxial loayer of the SiC of 5～10 μ m;
(2) utilizing chemical vapor deposition CVD method is 2x10 in N-type epi-layer surface epitaxial growth one deck doping content
19～6x10
19cm
-3, thickness is the P type epitaxial loayer of the GaN of 0.2～0.3 μ m;
(3) utilize inductively coupled plasma ICP lithographic technique on P type epitaxial loayer, to etch 5 μ m dark, the wide isolated groove of 30～50 μ m, to realize the mutual isolation between device;
(4) adopt low pressure hot wall CVD (Chemical Vapor Deposition) method, at sidewall and the thick Si of bottom deposit 30～50nm of above-mentioned groove
3n
4passivation layer;
(5) complete the N-type SiC substrate face gluing of above-mentioned technique, making the window of P type Ohm contact electrode by lithography, the Al metal level that then deposit 30nm is thick thereon is also peeled off and is removed photoresist, and obtains P type Ohm contact electrode;
(6) utilize electron-beam vapor deposition method at the not back side deposit Ni/Ti/Au metal level of extension of N-type SiC substrate, as N-type Ohm contact electrode;
(7) on P type epitaxial loayer Ohm contact electrode gluing and above it the right and left make window by lithography, then deposit Ti metal level and Au metal level successively, removing photoresist to peel off forms metallic bonding portion;
(8) to completing the N-type SiC substrate high temperature rapid thermal annealing of above-mentioned technique;
(9) on P type Ohm contact electrode, pass through electron-beam vapor deposition method or optionally deposit αsource layer of magnetron sputtering method, complete the making of battery.
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| CN109243659A (en) * | 2018-10-08 | 2019-01-18 | 山西大同大学 | A kind of minisize nuclear battery and preparation method thereof based on carbofrax material |
| CN110517804A (en) * | 2019-09-20 | 2019-11-29 | 西安交通大学 | A kind of single-crystal diamond n-i-p tuberculosis power battery and preparation method thereof |
| CN113990546A (en) * | 2021-10-09 | 2022-01-28 | 西安电子科技大学 | Groove Pin type beta irradiation battery with passivation layer surface field and preparation method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59108373A (en) * | 1982-12-14 | 1984-06-22 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| US7301254B1 (en) * | 2005-07-22 | 2007-11-27 | Cornell Research Foundation, Inc. | High efficiency radio isotope energy converters using both charge and kinetic energy of emitted particles |
| CN101325093A (en) * | 2008-07-23 | 2008-12-17 | 西安电子科技大学 | Minisize nuclear battery |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| CN102254581A (en) * | 2011-06-30 | 2011-11-23 | 西安电子科技大学 | SiC ring electrode PIN-type nuclear battery |
| CN102280157A (en) * | 2011-06-30 | 2011-12-14 | 西安电子科技大学 | Silicon carbide gridding electrode PIN type nuclear battery |
| CN102354540A (en) * | 2011-10-19 | 2012-02-15 | 西安电子科技大学 | I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof |
| CN102509569A (en) * | 2011-10-19 | 2012-06-20 | 西安电子科技大学 | Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell |
| US8288023B2 (en) * | 2008-08-08 | 2012-10-16 | Seagate Technology Llc | Magnetic memory cell construction |
-
2014
- 2014-06-29 CN CN201410301094.6A patent/CN104051052A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59108373A (en) * | 1982-12-14 | 1984-06-22 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| US7301254B1 (en) * | 2005-07-22 | 2007-11-27 | Cornell Research Foundation, Inc. | High efficiency radio isotope energy converters using both charge and kinetic energy of emitted particles |
| US7939986B2 (en) * | 2005-08-25 | 2011-05-10 | Cornell Research Foundation, Inc. | Betavoltaic cell |
| CN101325093A (en) * | 2008-07-23 | 2008-12-17 | 西安电子科技大学 | Minisize nuclear battery |
| US8288023B2 (en) * | 2008-08-08 | 2012-10-16 | Seagate Technology Llc | Magnetic memory cell construction |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN102254581A (en) * | 2011-06-30 | 2011-11-23 | 西安电子科技大学 | SiC ring electrode PIN-type nuclear battery |
| CN102280157A (en) * | 2011-06-30 | 2011-12-14 | 西安电子科技大学 | Silicon carbide gridding electrode PIN type nuclear battery |
| CN102354540A (en) * | 2011-10-19 | 2012-02-15 | 西安电子科技大学 | I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof |
| CN102509569A (en) * | 2011-10-19 | 2012-06-20 | 西安电子科技大学 | Silicon carbide Schottky junction type nuclear cell with vanadium-doped I layer and production method of silicon carbide Schottky junction type nuclear cell |
Non-Patent Citations (3)
| Title |
|---|
| WANG YUE-HU.ET.ALL: "Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights", 《CHIN.PHYS.B》, vol. 20, no. 8, 31 December 2011 (2011-12-31) * |
| 张玉娟: "4H-SiC β射线核电池和探测器的研究", 《中国优秀硕士学位论文全文数据库工程科技II辑》, no. 3, 31 March 2013 (2013-03-31) * |
| 程萍 等: "非故意掺杂4H-SiC外延材料本征缺陷的热稳定性", 《物理学报》, vol. 59, no. 5, 31 May 2010 (2010-05-31) * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109243659A (en) * | 2018-10-08 | 2019-01-18 | 山西大同大学 | A kind of minisize nuclear battery and preparation method thereof based on carbofrax material |
| CN110517804A (en) * | 2019-09-20 | 2019-11-29 | 西安交通大学 | A kind of single-crystal diamond n-i-p tuberculosis power battery and preparation method thereof |
| CN113990546A (en) * | 2021-10-09 | 2022-01-28 | 西安电子科技大学 | Groove Pin type beta irradiation battery with passivation layer surface field and preparation method |
| CN113990546B (en) * | 2021-10-09 | 2023-08-04 | 西安电子科技大学 | Groove Pin type beta irradiation battery with passivation layer surface field and preparation method |
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