CN104037265B - A kind of method of HIT solar cell and electrode preparation and series connection - Google Patents
A kind of method of HIT solar cell and electrode preparation and series connection Download PDFInfo
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- CN104037265B CN104037265B CN201410273118.1A CN201410273118A CN104037265B CN 104037265 B CN104037265 B CN 104037265B CN 201410273118 A CN201410273118 A CN 201410273118A CN 104037265 B CN104037265 B CN 104037265B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000012528 membrane Substances 0.000 claims abstract description 58
- 239000010409 thin film Substances 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 229910000846 In alloy Inorganic materials 0.000 claims description 29
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229920002799 BoPET Polymers 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 210000004712 air sac Anatomy 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004132 cross linking Methods 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 238000010422 painting Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000003292 glue Substances 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000009466 transformation Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of HIT solar cell and the method for electrode preparation and series connection thereof, including tinsel conductive strips and solar cell piece, solar cell piece includes N-type silicon plate, the front of N-type silicon plate is provided with intrinsic amorphous silicon thin film and P-type non-crystalline silicon thin film, the back side of N-type silicon plate is sequentially provided with intrinsic amorphous silicon thin film and N-type amorphous silicon membrane, P-type non-crystalline silicon thin film and be equipped with transparent conductive oxide film on N-type amorphous silicon membrane; The first half of tinsel conductive strips has solar cell piece, and the latter half of tinsel conductive strips is provided with solar cell piece. Compared with conventional H IT solar cell, this method need not be printed primary gate electrode and thin gate electrode and connect solar cell also without with convergent belt. Solar-cell timepiece surface current, at solar cell front or the back side, is collected and derives, serving as thin grid and main grid function by the wire portion of tinsel conductive strips parallel laid on the one hand; On the other hand two panels solar cell is connected, serve as convergent belt function.
Description
Technical field
The invention belongs to HIT solar cell piece and assembly manufactures field, the method relating to HIT solar cell and series connection, particularly relate to a kind of HIT solar cell and the method for electrode preparation and series connection thereof.
Background technology
Solar cell utilizes the photovoltaic effect of pn-junction to convert light energy into electric energy. HIT solar cell is a kind of efficient business solar cell. Being characterized between emitter stage and back side high-concentration dopant layer and substrate and add one layer of assertive evidence amorphous silicon layer, structure is as shown in Figure 1.
HIT solar cell piece manufacturing process is as follows: 1) N-type silicon chip cleaning and texturing; 2) intrinsic amorphous silicon thin film and P-type non-crystalline silicon thin film are prepared in front with PECVD; 3) intrinsic amorphous silicon thin film and N-type amorphous silicon membrane are prepared overleaf with PECVD; 4) transparent conductive oxide (TCO) is deposited at two sides sputtering method; 5) positive and negative surface electrode is prepared with silk-screen printing technique. Relative to routine business crystal-silicon solar cell, HIT solar cell has two big advantages: 1) open-circuit voltage is higher, it is possible to achieve higher photoelectric transformation efficiency; 2) temperature coefficient is low, and in practical application, temperature influence is little, it is possible to export more electricity.
The electrode converging technique of current HIT solar cell piece: the electric current in order to will collect at solar battery surface is derived, it is necessary to prepare electrode with conductive material at solar battery surface. Owing to the electric conductivity of the P type on HIT solar cell PN junction two sides and the thin amorphous silicon layer of N-type is poor, first has to prepare one layer of TCO thin film in P type and N-type thin amorphous silicon layer surface, increase its transverse conduction. Then in TCO thin film, conductive silver glue grid line is printed as surface primary gate electrode.
Meanwhile, solar module manufacturing process mainly has series welding and two links of encapsulation. In series welding link conventional at present, first convergent belt is welded on the primary gate electrode of solar cell piece, then again the part that convergent belt extends is welded on down on the corresponding back side primary gate electrode of a piece of solar cell piece. Owing to every solar cell exists a plurality of main grid, this concatenation way is inefficient, adopts the equipment of automatic series welding likely to improve again the fragment rate of solar cell piece.
In order to reduce photovoltaic generation cost, the development course of commercialization solar cell is mainly high-efficiency and low-cost: improve the photoelectric transformation efficiency of solar cell on the one hand by improving constantly short circuit current, open-circuit voltage and fill factor, curve factor; On the other hand, reduce the manufacturing cost of solar cell, including the spillage of material reducing each side.
Conductive silver glue is a kind of adhesive solidifying or having after drying certain electric conductivity. Current this material mainly has 2 problems: first, and the conductive silver glue technical threshold being specifically designed to HIT solar cell is higher, causes that material price is expensive; Secondly, conductive silver glue electric conductivity is on the low side, bigger than normal as electrode material resistance, reduces the fill factor, curve factor of solar cell. And the HIT cell piece completed also needs to series connection link: with the positive and negative connecting two panels solar cell with conducting resinl welding respectively, being together in series one by one by cell piece, this link workload is big, relatively costly.
Summary of the invention
The present invention is to solve above-mentioned technical problem, it is provided that a kind of method of HIT solar cell and electrode preparation and series connection, it is possible to save silkscreen process, eliminate the conductive silver glue of costliness simultaneously, decrease workload, reduce cost of manufacture.
The present invention is achieved through the following technical solutions:
The method of the preparation of a kind of HIT solar cel electrode and series connection, comprises the following steps:
1) being fixed up parallel for some one metal wires, form conductive strips, wherein, tinsel and solar cell piece are with wide, and length is solar cell piece twice, and tinsel is the copper wire being coated with tin-indium alloy;
2) overleaf packaged glass completes one layer of EVA film, conductive strips are laid in EVA film successively, a piece of solar cell piece is laid respectively before and after each conductive strips, thus being connected by solar cell piece, both positive and negative polarity electric current is drawn by the positive and negative extreme painting stannum copper strips of laying respectively of solar cell piece in series connection;
3) above the solar cell piece laid, one layer of EVA film and front packaged glass are spread successively;
4) space between the tinsel on conductive strips and TCO thin film is carried out evacuation process, form vacuum state;
5) temperature of whole HIT solar cell is risen to 80 DEG C, now EVA film fusing, along with temperature continues to rise, EVA film generation cross-linking reaction, after temperature rises to 138 DEG C, copper wire surface tin-indium alloy melts;
6) by air sac pressing conductive strips, the TCO thin film that tinsel is closely attached to TCO thin film surface, melted tin-indium alloy and solar battery surface is made to fit tightly;
7) making the solidification of eva film, tin-indium alloy solidify by cooling, lamination terminates.
Connection two panels arranged in parallel for tinsel is comprised the composite membrane of PET and EVA materials at two layers, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, thus prepare conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, and PET film thickness 50-200 micron, EVA film thickness is 5-50 micron.
Being layered on by conductive strips first half above a piece of solar cell, latter half is layered on down below a piece of solar cell piece.
Being fixed up by portion transverse wire is parallel by some one metal wires, form metal gauze conductive strips, wherein, in first half metal gauze conductive strips, on top, in latter half metal gauze conductive strips, portion transverse wire is below for portion transverse wire.
Metal gauze length direction is that conduction is confluxed direction, is called longitudinal direction, and other direction is that laterally longitudinal metallic wire quantity is 50-150 root, and portion transverse wire quantity is less than 50.
Wire diameter wiry is 10 μm-100 μm.
Described coating wiry is tin-indium alloy, and its stannum indium component according to laminating temperature adjustment, can keep fusing point lower than laminating temperature.
A kind of HIT solar cell, including tinsel conductive strips and solar cell piece, described solar cell piece includes N-type silicon plate, the front of N-type silicon plate is provided with intrinsic amorphous silicon thin film and P-type non-crystalline silicon thin film, the back side of N-type silicon plate is disposed with intrinsic amorphous silicon thin film and N-type amorphous silicon membrane, P-type non-crystalline silicon thin film and be provided with transparent conductive oxide film on N-type amorphous silicon membrane; The first half of tinsel conductive strips is arranged with solar cell piece, and the latter half of tinsel conductive strips is provided with solar cell piece, and wherein, the tinsel of tinsel conductive strips and solar cell piece are with wide, long for solar cell piece twice.
Described tinsel conductive strips are made up of tinsel and the composite membrane comprising PET and EVA materials at two layers, tinsel is the copper wire being coated with tin-indium alloy, tinsel connection two panels composite membrane arranged in parallel, wherein, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, form conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, PET film thickness 50-200 micron, EVA film thickness is 5-50 micron.
Composite membrane be shaped as square or dead square.
Described tinsel conductive strips are made up of metal gauze, tinsel material is be coated with the copper wire of tin-indium alloy, metal gauze length direction is that conduction is confluxed direction, is called longitudinal direction, and other direction is laterally, longitudinal metallic wire quantity is 50-150 root, portion transverse wire quantity is less than 50, and in forward metal silk conductive strips, portion transverse wire is on top, in back-end metal silk conductive strips, portion transverse wire is below.
Compared with prior art, the present invention has following useful technique effect:
1) tinsel adopting relative low price replaces conductive silver glue, effectively reduces manufacturing cost; 2) wire diameter wiry lower than thin grid, and can save main grid, blocks thus reducing solar cell piece surface, improves photogenerated current; 3) tinsel electric conductivity has a clear superiority in relative to conductive silver glue, advantageously reduces series resistance, improves fill factor, curve factor, thus improving photoelectric transformation efficiency; 4) the solar cell piece concatenation technological operation simultaneously adopting invention described is simple, it is easy to produce.
The present invention, in HIT solar cell manufacturing process, after having made nesa coating (TCO), is made directly testing, sorting. Subsequently into link of the present invention, tinsel is namely adopted to collect solar-cell timepiece surface current and series connection solar cell piece. In the manufacturing process of solar cell piece, this technique can save silkscreen process, eliminates the conductive silver glue of costliness simultaneously.
Simultaneously as TCO thin film surface is matte, less with the contact area of copper wire, melted tin-indium alloy can fit tightly with TCO thin film and copper wire, increases contact area, reduces contact resistance.
Meanwhile, compared with conventional H IT solar cell, this method need not be printed primary gate electrode and thin gate electrode and connect solar cell also without with convergent belt. Solar-cell timepiece surface current, at solar cell front or the back side, is collected and derives, serving as thin grid and main grid function by the wire portion of tinsel conductive strips parallel laid on the one hand; On the other hand two panels solar cell is connected, serve as convergent belt function, therefore present invention eliminates silkscreen process, eliminate the conductive silver glue of costliness simultaneously, decrease workload, reduce cost of manufacture.
Accompanying drawing explanation
Fig. 1 is solar battery structure in prior art;
Fig. 2 is solar cell piece cascaded structure schematic diagram;
Fig. 3 is the another cascaded structure schematic diagram of solar cell piece;
Fig. 4 is conductive strips structural representation;
Fig. 5 is another conductive strips structural representation;
Fig. 6 is the laying structure schematic diagram of conductive strips;
Fig. 7 is the cascaded structure schematic diagram of solar cell piece;
Fig. 8 is solar module laying structure schematic diagram.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in further detail, and the explanation of the invention is not limited.
Referring to Fig. 2 to Fig. 8, the method for the preparation of a kind of HIT solar cel electrode and series connection, comprise the following steps:
1) connection two panels arranged in parallel for tinsel is comprised the composite membrane of PET and EVA materials at two layers, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, thus prepare conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, PET film thickness 50, 125, 150 or 200 microns, EVA film thickness is 5, 10, 28, 30 or 50 microns. wherein, tinsel is the first half of conductive strips in lower section, tinsel up be the latter half of conductive strips, described composite membrane is square or dead square, and wire diameter wiry is 10 μm-100 μm.
2) overleaf packaged glass completes one layer of EVA film, conductive strips are laid in EVA film successively, and each conductive strips first half is layered on above a piece of solar cell, conductive strips latter half is layered on down below a piece of solar cell piece, thus being connected by solar cell piece, both positive and negative polarity electric current is drawn by the positive and negative extreme painting stannum copper strips of laying respectively of solar cell piece in series connection. Wherein, packaged glass is consistent with component specification with EVA film specification. Wherein, assembly refers to the product after solar cell such as Fig. 8 form being encapsulated, because the length and width of different size assembly are different, so needing to cut into EVA corresponding specification.
3) above the solar cell piece laid, one layer of EVA film and front packaged glass are spread successively.
4) space between the tinsel on conductive strips and TCO thin film is carried out evacuation process, form vacuum state.
5) temperature of whole HIT solar cell being risen to 80 DEG C, now EVA fusing, along with temperature continues to rise, there is cross-linking reaction in EVA, and after temperature rises to 138 DEG C, copper wire surface tin-indium alloy melts.
6) by air sac pressing conductive strips, the TCO thin film that tinsel is closely attached to TCO thin film surface, melted tin-indium alloy and solar battery surface is made to fit tightly.
7) making the solidification of eva film, tin-indium alloy solidify by cooling, lamination terminates. Meanwhile, tin-indium alloy solidifies, and after solidification, tin-indium alloy pattern and TCO thin film surface profiles, thus forming the close contact of copper wire-tin-indium alloy-TCO thin film, being greatly increased contact area, reducing copper wire and the contact resistance of TCO thin layer.
Referring to Fig. 2 to Fig. 8, the method for the preparation of a kind of HIT solar cel electrode and series connection, comprise the following steps:
1) being fixed up by portion transverse wire is parallel by some one metal wires, form the conductive strips of metal gauze, wherein, tinsel and solar cell piece, with wide, are about as solar cell piece twice, and tinsel is the copper wire being coated with tin-indium alloy. Wherein, in the conductive strips of first half metal gauze, on top, in the conductive strips of latter half metal gauze, portion transverse wire is below for portion transverse wire; Metal gauze length direction is that conduction is confluxed direction, is called longitudinal direction, and other direction is that laterally longitudinal metallic wire quantity is 50,100 or 150, and portion transverse wire quantity is less than 50, and wire diameter wiry is 10 μm-100 μm. Concrete wire diameter wiry is 10,55 or 100 μm.
2) overleaf packaged glass completes one layer of EVA film, conductive strips are laid in EVA film successively, a piece of solar cell piece is laid respectively before and after each conductive strips, thus being connected by solar cell piece, both positive and negative polarity electric current is drawn by the positive and negative extreme painting stannum copper strips of laying respectively of solar cell piece in series connection.
3) above the solar cell piece laid, one layer of EVA film and front packaged glass are spread successively.
4) space between the tinsel on conductive strips and TCO thin film is carried out evacuation process, form vacuum state.
5) temperature of whole HIT solar cell being risen to 80 DEG C, now EVA film fusing, along with temperature continues to rise, EVA film generation cross-linking reaction, after temperature rises to 138 DEG C, copper wire surface tin-indium alloy melts.
6) by air sac pressing conductive strips, the TCO thin film that tinsel is closely attached to TCO thin film surface, melted tin-indium alloy and solar battery surface is made to fit tightly.
7) making the solidification of eva film, tin-indium alloy solidify by cooling, lamination terminates. Meanwhile, tin-indium alloy solidifies, and after solidification, tin-indium alloy pattern and TCO thin film surface profiles, thus forming the close contact of copper wire-tin-indium alloy-TCO thin film, being greatly increased contact area, reducing copper wire and the contact resistance of TCO thin layer.
Wherein, in above-mentioned two method, described wire diameter wiry and number can adjust according to shading wiry loss and string resistance loss, and general wire diameter is at 10 μm of-100 μ m. And described coating wiry is tin-indium alloy, its stannum indium component according to laminating temperature adjustment, can keep fusing point lower than laminating temperature.
Further, the series-mounting of the present invention: as shown in Figure 6, conductive strips first half is layered on above a piece of solar cell, latter half is layered on down below a piece of solar cell piece. Fig. 7 is the schematic diagram of solar cell piece of connecting in this way.
Further, the thickness of conductive strips composite membrane of the present invention can according to parameter adjustment wiry.
Referring to Fig. 2 to Fig. 8, a kind of HIT solar cell, including tinsel conductive strips and solar cell piece, described solar cell piece includes N-type silicon plate, the front of N-type silicon plate is provided with intrinsic amorphous silicon thin film and P-type non-crystalline silicon thin film, the back side of N-type silicon plate is disposed with intrinsic amorphous silicon thin film and N-type amorphous silicon membrane, P-type non-crystalline silicon thin film and be provided with transparent conductive oxide film on N-type amorphous silicon membrane; The conductive strips first half of tinsel conductive strips is arranged with solar cell piece, and the conductive strips latter half of tinsel conductive strips is provided with solar cell piece, and wherein, the tinsel of tinsel conductive strips and solar cell piece, with wide, are about as solar cell piece twice.
Wherein, referring to Fig. 4, described tinsel conductive strips are made up of tinsel and the composite membrane comprising PET and EVA materials at two layers, tinsel is the copper wire being coated with tin-indium alloy, tinsel connection two panels composite membrane arranged in parallel, wherein, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, form conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, PET film thickness 50, 125, 150 or 200 microns, EVA film thickness is 5, 10, 28, 30 or 50 microns. wherein, the first half making the tinsel part in lower section be tinsel conductive strips, the tinsel latter half that part is tinsel conductive strips up, i.e. conductive strips A.
Referring to Fig. 5, described tinsel conductive strips are made up of metal gauze, tinsel material is be coated with the copper wire of tin-indium alloy, metal gauze length direction is that conduction is confluxed direction, it is called longitudinal direction, other direction is laterally, longitudinal metallic wire quantity is 50-150 root, portion transverse wire acts primarily as fixation, and quantity is less than 50, in forward metal silk conductive strips, portion transverse wire is on top, in back-end metal silk conductive strips, portion transverse wire is below, and do so is to ensure that longitudinal metallic wire can be close to battery surface when series connection.
Further, referring to Fig. 2, Fig. 3, described series connection electrode adopts the conductive strips comprising tens of one metal wire to be attached to solar cell piece surface, and the electric current collected on surface is derived, it is simultaneously connected with down the back side of a piece of solar cell piece, it is possible to require to change the laying direction of conductive strips according to component package.
The present invention has the advantage that 1) adopt the tinsel of relative low price to replace conductive silver glue, effectively reduce manufacturing cost; 2) wire diameter wiry lower than thin grid, and can save main grid, blocks thus reducing solar cell piece surface, improves photogenerated current; 3) tinsel electric conductivity has a clear superiority in relative to conductive silver glue, advantageously reduces series resistance, improves fill factor, curve factor, thus improving photoelectric transformation efficiency; 4) the solar cell piece concatenation technological operation simultaneously adopting invention described is simple, it is easy to produce.
The present invention, in HIT solar cell manufacturing process, after having made nesa coating (TCO), is made directly testing, sorting. Subsequently into link of the present invention, tinsel is namely adopted to collect solar-cell timepiece surface current and series connection solar cell piece. In the manufacturing process of solar cell piece, this technique can save silkscreen process, eliminates the conductive silver glue of costliness simultaneously.
The ultimate principle of the present invention and principal character and advantages of the present invention have more than been shown and described. Skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention. Claimed scope is defined by appending claims and equivalent thereof.
Claims (8)
1. the method for a HIT solar cel electrode preparation and series connection, it is characterised in that comprise the following steps:
1) connection two panels arranged in parallel for some one metal wires is comprised the composite membrane of PET and EVA materials at two layers, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, thus prepare conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, PET film thickness 50-200 micron, and EVA film thickness is 5-50 micron; Wherein, tinsel is the copper wire being coated with tin-indium alloy;
2) overleaf packaged glass completes one layer of EVA film, conductive strips are laid in EVA film successively, each conductive strips first half is layered on above a piece of solar cell, latter half is layered on down below a piece of solar cell piece, thus being connected by solar cell piece, both positive and negative polarity electric current is drawn by the positive and negative extreme painting stannum copper strips of laying respectively of solar cell piece in series connection;
3) above the solar cell piece laid, one layer of EVA film and front packaged glass are spread successively;
4) space between the tinsel on conductive strips and TCO thin film is carried out evacuation process, form vacuum state;
5) temperature of whole HIT solar cell is risen to 80 DEG C, now EVA film fusing, along with temperature continues to rise, EVA film generation cross-linking reaction, after temperature rises to 138 DEG C, copper wire surface tin-indium alloy melts;
6) by air sac pressing conductive strips, the TCO thin film that tinsel is closely attached to TCO thin film surface, melted tin-indium alloy and solar battery surface is made to fit tightly;
7) making the solidification of eva film, tin-indium alloy solidify by cooling, lamination terminates.
2. the method for HIT solar cel electrode according to claim 1 preparation and series connection, it is characterized in that, some one metal wires are fixed up by portion transverse wire is parallel, form the conductive strips of metal gauze, wherein, in the conductive strips of first half metal gauze, portion transverse wire is on top, in the conductive strips of latter half metal gauze, portion transverse wire is below.
3. the method for HIT solar cel electrode according to claim 2 preparation and series connection, it is characterised in that metal gauze length direction is that conduction is confluxed direction, it is called longitudinal direction, other direction is that laterally longitudinal metallic wire quantity is 50-150 root, and portion transverse wire quantity is less than 50.
4. the method for HIT solar cel electrode according to claim 1 preparation and series connection, it is characterised in that wire diameter wiry is 10 μm-100 μm.
5. the method for HIT solar cel electrode according to claim 1 preparation and series connection, it is characterised in that described coating wiry is tin-indium alloy, its stannum indium component, according to laminating temperature adjustment, keeps fusing point lower than laminating temperature.
6. a HIT solar cell, it is characterized in that, including tinsel conductive strips and solar cell piece, described solar cell piece includes N-type silicon plate, the front of N-type silicon plate is provided with intrinsic amorphous silicon thin film and P-type non-crystalline silicon thin film, the back side of N-type silicon plate is disposed with intrinsic amorphous silicon thin film and N-type amorphous silicon membrane, P-type non-crystalline silicon thin film and be provided with transparent conductive oxide film on N-type amorphous silicon membrane, the first half of tinsel conductive strips is arranged with solar cell piece, and the latter half of tinsel conductive strips is provided with solar cell piece, described tinsel conductive strips are made up of tinsel and the composite membrane comprising PET and EVA materials at two layers, tinsel is the copper wire being coated with tin-indium alloy, tinsel connection two panels composite membrane arranged in parallel, wherein, tinsel first half is attached to the lower section of a piece of composite membrane, and the EVA of composite membrane faces down and wire contact, tinsel latter half is attached to the top of another sheet composite membrane, and the EVA of composite membrane faces up and wire contact, two panels composite membrane edge is close, form conductive strips, wherein, composite membrane is identical with solar cell piece size, metal filament length is solar cell piece twice, PET film thickness 50-200 micron, EVA film thickness is 5-50 micron.
7. HIT solar cell according to claim 6, it is characterised in that composite membrane be shaped as square or dead square.
8. HIT solar cell according to claim 6, it is characterised in that described tinsel conductive strips are made up of metal gauze, tinsel material is be coated with the copper wire of tin-indium alloy, metal gauze length direction is that conduction is confluxed direction, is called longitudinal direction, and other direction is laterally, longitudinal metallic wire quantity is 50-150 root, portion transverse wire quantity is less than 50, and in forward metal silk conductive strips, portion transverse wire is on top, in back-end metal silk conductive strips, portion transverse wire is below.
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