CN104025252B - 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备 - Google Patents

提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备 Download PDF

Info

Publication number
CN104025252B
CN104025252B CN201280056970.2A CN201280056970A CN104025252B CN 104025252 B CN104025252 B CN 104025252B CN 201280056970 A CN201280056970 A CN 201280056970A CN 104025252 B CN104025252 B CN 104025252B
Authority
CN
China
Prior art keywords
cadmium
caddy
stove
telluride layer
methods described
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280056970.2A
Other languages
English (en)
Other versions
CN104025252A (zh
Inventor
阿克莱斯·吉普塔
马库斯·哥劳克勒
里克·C·鲍威尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
First Solar Inc
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of CN104025252A publication Critical patent/CN104025252A/zh
Application granted granted Critical
Publication of CN104025252B publication Critical patent/CN104025252B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

公开了一种方法和设备，其中，在对碲化镉层进行热处理的同时，将氯化镉沉积在碲化镉层上。

Description

提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备
技术领域
公开的实施例涉及光伏模块的制造，更具体地讲，涉及执行包含碲化镉的光伏模块的氯化镉处理的方法。
背景技术
光伏装置可以包括沉积在基底上方的半导体材料，例如，具有用作窗口层的第一层和用作吸收层的第二层。半导体窗口层可以使太阳辐射穿透到诸如碲化镉层的吸收层，吸收层将太阳能转换为电。光伏装置还可以包括还经常作为电荷的导体的一个或更多个透明导电氧化物层。
光伏电池的处理可以包括利用氯化镉对碲化镉涂覆板进行热处理，这可以提高碲化镉中的结晶质量和传输性能。在传统的氯化镉处理的多步骤方法中，在第一步骤中通过诸如溶液喷涂、使板浸渍到溶液中、气相应用或雾化雾应用的技术将氯化镉施加到碲化镉涂覆板。然后在第二步骤中通过热处理来活化氯化镉。
然而，各种已知的多步骤方法包括若干缺陷，包括缺乏对湿度的控制以及由于多步骤引起的较长处理时间，其中，对湿度的控制可有利于碲化镉-氯酸盐的形成。因此，期望一种用于氯化镉处理的简化工艺。
附图说明
图1是具有多个层的光伏装置的示意图。
图2是根据在此描述的实施例的气相沉积炉的示意图。
图3是根据在此描述的另一实施例的气相沉积炉的示意图。
图4是具有多个层的光伏装置的示意图。
具体实施方式
制造光伏装置的方法可以包括：将氯化镉蒸气引入到炉中以在碲化镉层上沉积氯化镉，同时使炉维持在适用于对所沉积的氯化镉同时进行热处理的合适的温度。在一个公开的实施例中，在移动的板上使氯化镉的应用和热处理结合到单个步骤中。
如图1中所示，光伏装置100可以包括与基底110和半导体材料层180相邻的透明导电氧化物堆170。
基底层110可以是装置100的最外层，在使用中，基底层110可以暴露于各种温度并且形成诸如雨、雪、雨夹雪和冰雹的沉淀物。基底层110也可以是入射光到达装置100遇到的第一层。因此，期望选择一种用于基底层110的既耐用又具有高透明度的材料。出于这些原因，基底层110可以包括例如硼硅酸盐玻璃、钠钙玻璃或浮法玻璃。
透明导电氧化物堆170可以形成为与基底110相邻并且可以包括多个层。例如，透明导电氧化物堆170可以包括：阻挡层120，与基底层110相邻；透明导电氧化物层130，与阻挡层120相邻；以及缓冲层140，与透明导电氧化物层130相邻。透明导电氧化物堆170可以通过一系列制造步骤形成，其中，在装置100上的每个连续的层形成为与前一层相邻。
半导体材料层180可以包括双层，所述双层可以包括：n型半导体窗口层，例如，镉硫化物层150，或更具体地讲，硫化镉锌层；以及p型半导体吸收层，例如，碲化镉层160。镉硫化物层150和碲化镉层160可以设置为彼此接触以产生电场。光子可以是在接触到镉硫化物层时将电子发送到n侧并且将空穴发送到p侧的自由的电子-空穴对。电子可以通过外部电流路径流回到p侧。产生的电子流提供了电流，电流与从电场产生的电压结合而产生功率。其结果就是光子能量转换成电能。
硫化镉锌可以用作镉硫化物层150中的材料。由于在吸收层的氯化镉退火期间，硫化镉锌能忍受高退火温度而被证明比硫化镉更稳健。硫化镉锌可以利用任意合适的技术(包括在2010年7月10日提交的第12/833,960号美国专利申请中所描述的技术中的任意技术，通过引用将其全部包含于此)来沉积。碲化镉层160可以利用包括蒸气传输沉积的任意合适的手段沉积在镉硫化物层150上。
在沉积之后，碲化镉层160可以经过单步骤蒸气氯化镉处理，从而提高晶粒尺寸并且改善装置100的效率。参照图2，通过示例的方式，装置100在例如辊210的传输机构上以连续的过程被传输通过炉200。在各种实施例中，传输机构可以是辊、带或其它传送手段。炉200可以包括多个加热器230，以使装置100的温度维持在用于蒸气氯化镉处理的期望温度。
在图2中示出的实施例的炉200包括原位气化单元220，以在炉200的内侧蒸发氯化镉。氯化镉可以以例如粉末的形式通过氯化镉输入管250被提供到气化单元220。载气可以可选地通过可选的载气输入管240被供应到气化单元220，以分配蒸发的氯化镉。使用的载气可以是氢、氦、氮、氖、氩、氪以及包含这些气体的混合物。可选择地，载气可以被省略，并且氯化镉蒸气以在环境条件下扩散。
氯化镉蒸气以一定的量并且在移动装置100上方的合适位置处通过扩散器260引入，以将期望的量的氯化镉沉积在碲化镉上。例如在第7,910,166号美国专利中描述了用于在玻璃基底上将可蒸发的半导体材料沉积为膜的装置和方法，通过引用将其公开内容全部包含于此。在一个实施例中，工艺可以是连续的，并且可以包括在沉积氯化镉并对碲化镉层160进行热处理的同时使装置100传输通过炉200。
参照图3，通过另一示例的方式，炉200包括异位气化单元280以在炉200的外侧蒸发氯化镉。然后将蒸发的氯化镉通过蒸发氯化镉输入管270和扩散器260注入到炉200中。氯化镉可以以例如粉末的形式通过氯化镉输入管250提供到气化单元280。载气可以可选地通过可选的载气输入管240供应到气化单元280，以分配蒸发的氯化镉。可选择地，载气可以被省略，并且氯化镉蒸气可以在环境条件下通过蒸发氯化镉输入管270扩散。氯化镉蒸发以一定的量并且在移动装置100上方的合适位置处通过扩散器260被引入，以将期望的量的氯化镉沉积到碲化镉上。
异位气化单元280通过使用例如节流阀以调节载气流，从而对源温度和氯化镉蒸气的蒸气量提供了良好的控制。使用异位气化单元280还允许使用多歧管来控制蒸发的氯化镉的分布，以提高效率。异位气化单元280还允许独立地控制氯化镉蒸气的源温度和处理炉200内的温度，具体地讲，允许气化单元280在比炉200和装置100的温度更高的温度下进行操作。这继而允许对热处理工艺进行更好的控制。在一个实施例中，氯化镉蒸气的源温度可以是大约400℃至900℃。
在图2和图3中示出的炉200维持在对应用的氯化镉层进行热处理的合适的温度下。因此，热处理与氯化镉层的沉积同时发生。在一个实施例中，炉200可以在大约350℃至大约600℃的温度下操作。在另一实施例中，炉200可以在大约385℃至大约500℃的温度下操作。在另一实施例中，炉200可以在大约400℃至大约450℃的温度下操作。炉200可以是控制环境炉，其中，装载/出口锁或气帘用于控制内部氧水平以使氧排出并且使氯化镉进入。可选择地，形成气体可用在炉200中，以将氧控制在非常低的水平。
如在实施例中所述，使用组合的蒸气氯化镉沉积和热处理工艺，提供了相对于先前的已知方法的若干优点。如上所述，公开的实施例的方法将氯化镉层的应用和热处理组合到单个连续工艺步骤中。另外，实施例提高了对氯化镉沉积和热处理参数的控制。可以实现对炉中的湿气的量的直接控制。氯化镉的量独立于基底温度而被控制，并且当基底处于最佳退火温度时可以注入非常少量的氯化镉。大量的氯化镉的气化可以导致冷凝，因此，在基底上沉积干的氯化镉，将在随后的热烘烤中执行退火。另外，在第一步骤中具体用于形成氯化镉层的传统的站可以从工艺线中省略。
在氯化镉处理之后，如图4中所示，可以将背接触金属190沉积到碲化镉层160上。背支撑部192可以沉积到背接触金属190上。背支撑部192可以包括任意合适的材料，包括玻璃(例如钠钙玻璃)。
利用在此描述的方法制造的光伏装置/模块可以并入到一个或更多个光伏阵列中。所述阵列可以并入到用于产生电的各种系统中。例如，光伏模块可以被光束照亮以产生光电流。光电流可以被收集并且从直流电流(DC)转换为交流电流(AC)，并分配到电网。可以在模块中引导任意合适波长的光，以产生包括例如大于400nm或小于700nm(例如，紫外光)的光电流。从一个光伏模块产生的光电流可以与从其它光伏模块产生的光电流结合。例如，光伏模块可以是光伏阵列的一部分，由此可利用并分配聚集电流。
通过举例说明和示例的方式给出了上面描述的实施例。应当理解的是，上面提供的示例可以在某些方面改变，并仍处于权利要求的范围内。应当明白的是，虽然已经参照上面的优选实施例描述了本发明，但是其它实施例在权利要求的范围内。

Claims (21)

1.一种制造光伏模块的方法，所述方法包括：
在基底上形成碲化镉层；
在炉中在碲化镉层上沉积氯化镉；以及
在炉中对碲化镉层进行热处理，其中，沉积氯化镉的步骤与对碲化镉层进行热处理的步骤同时发生，其中，沉积氯化镉的步骤紧随形成碲化镉层的步骤，炉是控制环境炉，
所述方法还包括：激活装载和出口锁或气帘，用于控制炉的内部氧水平以使氧排出并且使氯化镉进入。
2.根据权利要求1所述的方法，所述方法还包括：
在沉积氯化镉并对碲化镉层进行热处理的同时使基底传输通过炉。
3.根据权利要求2所述的方法，其中，基底在带或多个辊上传输通过炉。
4.根据权利要求1所述的方法，其中，碲化镉层通过布置在炉中的至少一个加热器进行热处理。
5.根据权利要求1所述的方法，所述方法还包括：在碲化镉层上沉积氯化镉之前，在布置在炉内侧的蒸发器中蒸发氯化镉。
6.根据权利要求5所述的方法，所述方法还包括：通过扩散器将蒸发的氯化镉输入到炉中。
7.根据权利要求1所述的方法，其中，在对碲化镉层进行热处理的同时，将炉维持在350℃至600℃的温度。
8.根据权利要求1所述的方法，其中，在对碲化镉层热处理的同时，将炉维持在400℃至450℃的温度。
9.根据权利要求1所述的方法，所述方法还包括：在碲化镉层上沉积氯化镉之前，在布置在炉外侧的蒸发器中蒸发氯化镉。
10.根据权利要求9所述的方法，所述方法还包括：通过扩散器将蒸发的氯化镉输入到炉中。
11.根据权利要求1所述的方法，所述方法还包括：在蒸发器中蒸发氯化镉，并且将载气供应到蒸发器，以分配蒸发的氯化镉。
12.根据权利要求11所述的方法，其中，载气包括氢、氦、氮、氖、氩、氪以及它们的混合物中的至少一种。
13.根据权利要求1所述的方法，其中，镉硫化物层设置在基底上，其中，碲化镉层设置在镉硫化物层上。
14.根据权利要求13所述的方法，其中，镉硫化物层包括硫化镉锌。
15.一种处理碲化镉层的方法，所述方法包括：
在碲化镉层上沉积氯化镉；以及
对碲化镉层进行热处理，
其中，沉积氯化镉的步骤和对碲化镉层进行热处理的步骤同时发生，
所述方法还包括：在同一炉中执行沉积氯化镉的步骤和对碲化镉层进行热处理的步骤，以及
激活装载和出口锁或气帘，用于控制炉的内部氧水平以使氧排出并且使氯化镉进入，其中，炉是控制环境炉。
16.根据权利要求15所述的方法，所述方法还包括：在沉积氯化镉并对碲化镉层进行热处理的同时使基底传输通过炉。
17.根据权利要求15所述的方法，所述方法还包括：在蒸发器中以比对碲化镉层进行热处理的温度高的蒸发温度蒸发氯化镉。
18.根据权利要求17所述的方法，其中，对碲化镉层进行热处理的温度为385℃至500℃。
19.根据权利要求17所述的方法，其中，对碲化镉层进行热处理的温度为400℃至450℃。
20.根据权利要求15所述的方法，所述方法还包括：利用扩散器在碲化镉层上沉积氯化镉。
21.根据权利要求20所述的方法，所述方法还包括：利用载气来分配蒸发的氯化镉。
CN201280056970.2A 2011-11-18 2012-11-02 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备 Active CN104025252B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161561375P 2011-11-18 2011-11-18
US61/561,375 2011-11-18
PCT/US2012/063346 WO2013074306A1 (en) 2011-11-18 2012-11-02 Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules

Publications (2)

Publication Number Publication Date
CN104025252A CN104025252A (zh) 2014-09-03
CN104025252B true CN104025252B (zh) 2018-04-06

Family

ID=47470098

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280056970.2A Active CN104025252B (zh) 2011-11-18 2012-11-02 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备

Country Status (4)

Country Link
US (2) US9318642B2 (zh)
CN (1) CN104025252B (zh)
MY (1) MY174619A (zh)
WO (1) WO2013074306A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655430B (zh) 2007-11-02 2019-06-07 第一太阳能有限公司 包括掺杂的半导体膜的光伏器件
IN2014DN10062A (zh) * 2012-05-21 2015-08-14 First Solar Inc
WO2018156698A1 (en) 2017-02-24 2018-08-30 First Solar, Inc. Doped photovoltaic semiconductor layers and methods of making
WO2019152174A1 (en) 2018-02-01 2019-08-08 First Solar, Inc. Method for group v doping of an absorber layer in photovoltaic devices
WO2019178029A1 (en) * 2018-03-13 2019-09-19 First Solar, Inc. Annealing materials and methods for annealing photovoltaic devices with annealing materials
US11257977B2 (en) * 2020-03-03 2022-02-22 The Board Of Trustees Of The University Of Alabama Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
CN114645257A (zh) * 2022-03-15 2022-06-21 北京大学深圳研究生院 一种硒化亚锡p型半导体薄膜及其制备方法和应用
CN117080080A (zh) * 2022-05-10 2023-11-17 中国建材国际工程集团有限公司 用于制造半成品CdTe基薄膜太阳能电池装置的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US7883745B2 (en) * 2007-07-30 2011-02-08 Micron Technology, Inc. Chemical vaporizer for material deposition systems and associated methods
US7939363B1 (en) * 2010-10-27 2011-05-10 General Electric Company Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices
CN102097537A (zh) * 2009-12-11 2011-06-15 通用电气公司 制作薄膜太阳能电池的过程

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251701B1 (en) * 2000-03-01 2001-06-26 The United States Of America As Represented By The United States Department Of Energy All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
US6906296B2 (en) * 2002-06-12 2005-06-14 Steris Inc. Electromagnetically responsive heating apparatus for vaporizer
US7910166B2 (en) 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
EP1862564B1 (de) * 2006-06-03 2008-09-03 Applied Materials GmbH & Co. KG Vorrichtung zum Verdampfen von Materialien mit einem Verdampferrohr
TW200931537A (en) * 2007-12-11 2009-07-16 Centrotherm Thermal Solutions Gmbh & Co Kg Method and arrangement for tempering SiC wafers
US8334455B2 (en) 2008-07-24 2012-12-18 First Solar, Inc. Photovoltaic devices including Mg-doped semiconductor films
US20100200063A1 (en) * 2009-02-12 2010-08-12 Derek Djeu Thin film solar cell
TW201108452A (en) 2009-07-10 2011-03-01 First Solar Inc Photovoltaic devices including zinc
TW201121089A (en) 2009-10-13 2011-06-16 First Solar Inc Method of annealing cadmium telluride photovoltaic device
US20110240123A1 (en) * 2010-03-31 2011-10-06 Hao Lin Photovoltaic Cells With Improved Electrical Contact
CN102939668A (zh) * 2010-04-21 2013-02-20 安可太阳能股份有限公司 具有电沉积的化合物界面层的太阳能电池的制造方法
EP2569804A2 (en) * 2010-05-10 2013-03-20 The University of Toledo Rapid thermal activation of flexible photovoltaic cells and modules

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US7883745B2 (en) * 2007-07-30 2011-02-08 Micron Technology, Inc. Chemical vaporizer for material deposition systems and associated methods
CN102097537A (zh) * 2009-12-11 2011-06-15 通用电气公司 制作薄膜太阳能电池的过程
US7939363B1 (en) * 2010-10-27 2011-05-10 General Electric Company Systems and methods of intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices

Also Published As

Publication number Publication date
US20160197226A1 (en) 2016-07-07
MY174619A (en) 2020-05-02
US9318642B2 (en) 2016-04-19
WO2013074306A1 (en) 2013-05-23
CN104025252A (zh) 2014-09-03
US20130130433A1 (en) 2013-05-23

Similar Documents

Publication Publication Date Title
CN104025252B (zh) 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备
US7955891B2 (en) Thermal management and method for large scale processing of CIS and /or CIGS based thin films overlying glass substrates
US9147792B2 (en) Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device
JPH05121338A (ja) 堆積膜形成方法および堆積膜形成装置
CN102484170A (zh) 包含锌的光伏器件
US20120061235A1 (en) Mixed sputtering target of cadmium sulfide and cadmium telluride and methods of their use
US20170104110A1 (en) Photovoltaic device containing an n-type dopant source
US8008198B1 (en) Large scale method and furnace system for selenization of thin film photovoltaic materials
CN102312194B (zh) 用于形成导电透明氧化物膜层的设备和方法
Pandian et al. Effect of surface treatment of sputtered nickel oxide in inverted perovskite solar cells
CN104334767B (zh) 利用氢形成透明导电氧化物的方法和设备
US9390917B2 (en) Closed-space sublimation process for production of CZTS thin-films
TW201027781A (en) Method and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films
US20130252367A1 (en) System and process for forming thin film photovoltaic device
US8460765B2 (en) Methods for forming selectively deposited thin films
US8372684B1 (en) Method and system for selenization in fabricating CIGS/CIS solar cells
JP3255903B2 (ja) 堆積膜形成方法および堆積膜形成装置
CN103094372A (zh) 太阳能电池及其制造方法
KR101967275B1 (ko) 플렉시블 박막태양전지를 위한 Na 공급방법 및 그에 따라 제조된 태양전지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant