CN104009125A - Texturing technique of polycrystalline silicon chips - Google Patents
Texturing technique of polycrystalline silicon chips Download PDFInfo
- Publication number
- CN104009125A CN104009125A CN201410267478.0A CN201410267478A CN104009125A CN 104009125 A CN104009125 A CN 104009125A CN 201410267478 A CN201410267478 A CN 201410267478A CN 104009125 A CN104009125 A CN 104009125A
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- mass fraction
- acid
- silicon
- wool
- etching
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000003513 alkali Substances 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 9
- 238000005554 pickling Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 235000008216 herbs Nutrition 0.000 claims description 19
- 210000002268 wool Anatomy 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000002310 reflectometry Methods 0.000 abstract description 9
- 239000002253 acid Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- MTJGVAJYTOXFJH-UHFFFAOYSA-N 3-aminonaphthalene-1,5-disulfonic acid Chemical compound C1=CC=C(S(O)(=O)=O)C2=CC(N)=CC(S(O)(=O)=O)=C21 MTJGVAJYTOXFJH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention discloses a texturing technique of polycrystalline silicon chips. The texturing technique comprises the following steps that (1) the surface of each silicon chip is coated with a layer of silicon carbide particles, (2) acid texturing is carried out in mixed liquid containing nitric acid and hydrofluoric acid, (3) alkali texturing is carried out in potassium hydroxide solution, (4) acid pickling is carried out in the mixed liquid containing hydrochloric acid and hydrofluoric acid, and (5) cleaning and drying are carried out. Solar cells manufactured through the texturing technique are low in reflectivity, and battery conversion efficiency of the polycrystalline silicon solar cells is high.
Description
Technical field
The present invention relates to the making field of solar cell, especially relate to a kind of process for etching of polysilicon chip.
Background technology
In recent years, polysilicon solar cell is with its conversion efficiency compared with high, stable performance and the moderate feature of cost and obtain applying more and more widely, and its output has surmounted monocrystalline silicon, has occupied the leading position in market.
In order to improve the battery conversion efficiency of solar cell, when making, need first silicon chip to be carried out to chemical treatment, make silicon face make an effigurate matte of tool, still, according to prior art, polysilicon solar battery slice is being carried out after making herbs into wool, gained silicon chip reflectivity is higher, and the uniformity of matte is poor, and the battery conversion efficiency of polysilicon solar battery slice is low.
Summary of the invention
The present invention, in order to overcome above-mentioned deficiency, provides a kind of reflectivity lower, the process for etching of the much higher crystal silicon chip of battery conversion efficiency.
Technical scheme of the present invention is as follows:
A process for etching for polysilicon chip, comprises the following steps:
(1) at silicon chip surface spraying one deck silicon-carbide particle;
(2) in the mixed liquor that contains nitric acid and hydrofluoric acid, carry out sour making herbs into wool;
(3) in potassium hydroxide solution, carry out alkali making herbs into wool;
(4) in the mixed liquor that contains hydrochloric acid and hydrofluoric acid, carry out pickling;
(5) clean and dry.
In step (1), the particle diameter of silicon-carbide particle is between 1-10 μ m.
In step (2) mixed liquor, the mass fraction of nitric acid is 35%, and the mass fraction of hydrofluoric acid is 7%, and silicon chip is making herbs into wool 1.5min at 15 ℃.
In step (3), the mass fraction of potassium hydroxide is 8%, and silicon chip is making herbs into wool 2min at 35 ℃.
In step (4) mixed liquor, the mass fraction of hydrochloric acid is 15%, and the mass fraction of hydrofluoric acid is 10%, and silicon chip is pickling 0.5min at 25 ℃, with the alkali lye of removing oxide layer and adhering to.
In step (5), after cleaning, at 35 ℃, dry 2.5min.
The invention has the beneficial effects as follows:
The present invention first sprays silicon-carbide particle as protection particle, then uses sour making herbs into wool, form etch pit, and in this process, owing to there being protection particle, surface by particle covering place corrosion slowly, has reduced the reflectivity of silicon chip on polysilicon chip surface; And then use alkali making herbs into wool, in the pit forming in acid corrosion, erode away pyramidal pattern, form more light trapping, changed the appearance structure of silicon chip surface, further reduce the reflectivity after polysilicon making herbs into wool, improved the battery conversion efficiency of polysilicon solar battery slice.
Embodiment
The present invention is further detailed explanation now.
Embodiment 1
A process for etching for polysilicon chip, comprises the following steps:
(1) at silicon chip surface spraying one deck particle diameter at the silicon-carbide particle of 1-2 μ m as protection particle;
(2) under the condition of 15 ℃, sour making herbs into wool 1.5min in containing the mixed liquor that mass fraction is 35% nitric acid and the mass fraction hydrofluoric acid that is 7%;
(3) under the condition of 35 ℃, alkali making herbs into wool 2min in the potassium hydroxide solution that is 8% at mass fraction;
(4), under the condition of 25 ℃, pickling 0.5min in containing the mixed liquor that mass fraction is 15% hydrochloric acid and the mass fraction hydrofluoric acid that is 10%, with the alkali lye of removing oxide layer and adhering to;
(5) in clear water, clean, and dry 2.5min at 35 ℃.
The solar battery sheet reflectivity of producing by said method is 24.8%, and battery conversion efficiency is 17.51%.
Embodiment 2
(1) at silicon chip surface spraying one deck particle diameter at the silicon-carbide particle of 5-6 μ m as protection particle;
(2) under the condition of 15 ℃, sour making herbs into wool 1.5min in containing the mixed liquor that mass fraction is 35% nitric acid and the mass fraction hydrofluoric acid that is 7%;
(3) under the condition of 35 ℃, alkali making herbs into wool 2min in the potassium hydroxide solution that is 8% at mass fraction;
(4), under the condition of 25 ℃, pickling 0.5min in containing the mixed liquor that mass fraction is 15% hydrochloric acid and the mass fraction hydrofluoric acid that is 10%, with the alkali lye of removing oxide layer and adhering to;
(5) in clear water, clean, and dry 2.5min at 35 ℃.
The solar battery sheet reflectivity of producing by said method is 22.3%, and battery conversion efficiency is 17.62%.
Embodiment 3
(1) at silicon chip surface spraying one deck particle diameter at the silicon-carbide particle of 9-10 μ m as protection particle;
(2) under the condition of 15 ℃, sour making herbs into wool 1.5min in containing the mixed liquor that mass fraction is 35% nitric acid and the mass fraction hydrofluoric acid that is 7%;
(3) under the condition of 35 ℃, alkali making herbs into wool 2min in the potassium hydroxide solution that is 8% at mass fraction;
(4), under the condition of 25 ℃, pickling 0.5min in containing the mixed liquor that mass fraction is 15% hydrochloric acid and the mass fraction hydrofluoric acid that is 10%, with the alkali lye of removing oxide layer and adhering to;
(5) in clear water, clean, and dry 2.5min at 35 ℃.
The solar battery sheet reflectivity of producing by said method is 23.1%, and battery conversion efficiency is 17.55%.
Comparative example
Traditional polysilicon process for etching is as follows:
By polysilicon chip, in temperature, be making herbs into wool 1-2min in the mixed liquid of the hydrofluoric acid of 4-10 ℃ and nitric acid, wherein the mass fraction of hydrofluoric acid and nitric acid is respectively 6-8% and 35-40%.The solar battery sheet reflectivity of producing by the method is more than 27%.
Above-mentioned is enlightenment according to the present invention, and by above-mentioned description, person skilled can, within not departing from the scope of this invention technological thought, be carried out various change and modification completely.The technical scope of this invention is not limited to the content on specification, must determine its technical scope according to claim scope.
Claims (6)
1. a process for etching for polysilicon chip, is characterized in that, comprises the following steps:
(1) at silicon chip surface spraying one deck silicon-carbide particle;
(2) in the mixed liquor that contains nitric acid and hydrofluoric acid, carry out sour making herbs into wool;
(3) in potassium hydroxide solution, carry out alkali making herbs into wool;
(4) in the mixed liquor that contains hydrochloric acid and hydrofluoric acid, carry out pickling;
(5) clean and dry.
2. the process for etching of polysilicon chip according to claim 1, is characterized in that, in step (1), the particle diameter of silicon-carbide particle is between 1-10 μ m.
3. the process for etching of polysilicon chip according to claim 1, is characterized in that, in step (2) mixed liquor, the mass fraction of nitric acid is 35%, and the mass fraction of hydrofluoric acid is 7%, and silicon chip is making herbs into wool 1.5min at 15 ℃.
4. the process for etching of polysilicon chip according to claim 1, is characterized in that, in step (3), the mass fraction of potassium hydroxide is 8%, and silicon chip is making herbs into wool 2min at 35 ℃.
5. the process for etching of polysilicon chip according to claim 1, is characterized in that, in step (4) mixed liquor, the mass fraction of hydrochloric acid is 15%, and the mass fraction of hydrofluoric acid is 10%, and silicon chip is pickling 0.5min at 25 ℃.
6. the process for etching of polysilicon chip according to claim 1, is characterized in that, in step (5), after cleaning, at 35 ℃, dries 2.5min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410267478.0A CN104009125B (en) | 2014-06-08 | 2014-06-08 | The process for etching of polysilicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410267478.0A CN104009125B (en) | 2014-06-08 | 2014-06-08 | The process for etching of polysilicon chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104009125A true CN104009125A (en) | 2014-08-27 |
| CN104009125B CN104009125B (en) | 2016-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410267478.0A Expired - Fee Related CN104009125B (en) | 2014-06-08 | 2014-06-08 | The process for etching of polysilicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104009125B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241449A (en) * | 2014-09-18 | 2014-12-24 | 百力达太阳能股份有限公司 | Technology for manufacturing polycrystalline silicon solar cells |
| CN106012027A (en) * | 2016-07-05 | 2016-10-12 | 常州大学 | Monocrystalline/polycrystalline silicon chained acid-alkali integrated texture and preparing method thereof |
| CN106328734A (en) * | 2016-08-31 | 2017-01-11 | 东方日升新能源股份有限公司 | Texturization method of silicon chip of solar cell |
| CN107393818A (en) * | 2017-06-27 | 2017-11-24 | 江苏大学 | A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon |
| CN110752273A (en) * | 2019-10-30 | 2020-02-04 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524985A (en) * | 2020-04-28 | 2020-08-11 | 中国科学院电工研究所 | Method for texturing surface of polycrystalline silicon wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090277501A1 (en) * | 2008-05-08 | 2009-11-12 | Marvin Keshner | Solar Panel Having Improved Light-Trapping Characteristics and Method |
| CN101613884A (en) * | 2009-04-02 | 2009-12-30 | 常州天合光能有限公司 | Polycrystalline silicon fuzzing process by acid method |
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
-
2014
- 2014-06-08 CN CN201410267478.0A patent/CN104009125B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090277501A1 (en) * | 2008-05-08 | 2009-11-12 | Marvin Keshner | Solar Panel Having Improved Light-Trapping Characteristics and Method |
| CN101613884A (en) * | 2009-04-02 | 2009-12-30 | 常州天合光能有限公司 | Polycrystalline silicon fuzzing process by acid method |
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241449A (en) * | 2014-09-18 | 2014-12-24 | 百力达太阳能股份有限公司 | Technology for manufacturing polycrystalline silicon solar cells |
| CN106012027A (en) * | 2016-07-05 | 2016-10-12 | 常州大学 | Monocrystalline/polycrystalline silicon chained acid-alkali integrated texture and preparing method thereof |
| CN106328734A (en) * | 2016-08-31 | 2017-01-11 | 东方日升新能源股份有限公司 | Texturization method of silicon chip of solar cell |
| CN107393818A (en) * | 2017-06-27 | 2017-11-24 | 江苏大学 | A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon |
| CN107393818B (en) * | 2017-06-27 | 2020-06-09 | 江苏大学 | Acid-base secondary texturing method of polycrystalline silicon solar cell and polycrystalline silicon thereof |
| CN110752273A (en) * | 2019-10-30 | 2020-02-04 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
| CN110752273B (en) * | 2019-10-30 | 2022-07-01 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
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| Publication number | Publication date |
|---|---|
| CN104009125B (en) | 2016-07-06 |
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| C14 | Grant of patent or utility model | ||
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Inventor after: Chen Zhaoming Inventor before: Wu Shiwei |
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| TR01 | Transfer of patent right |
Effective date of registration: 20170630 Address after: 541199, Lingui Guilin, the Guangxi Zhuang Autonomous Region pond Industrial Park Patentee after: Guilin Sunshine Energy Technology Co.,Ltd. Address before: 510000 unit 2414-2416, building, No. five, No. 371, Tianhe District, Guangdong, China Patentee before: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Effective date of registration: 20170630 Address after: 510000 unit 2414-2416, building, No. five, No. 371, Tianhe District, Guangdong, China Patentee after: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Address before: 315613 No. 8 Yucai Road, West Town, Ninghai County, Zhejiang Province Patentee before: Wu Shiwei |
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Granted publication date: 20160706 Termination date: 20190608 |
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| CF01 | Termination of patent right due to non-payment of annual fee |