CN103985734B - A kind of transparent display and preparation method thereof - Google Patents
A kind of transparent display and preparation method thereof Download PDFInfo
- Publication number
- CN103985734B CN103985734B CN201410153794.5A CN201410153794A CN103985734B CN 103985734 B CN103985734 B CN 103985734B CN 201410153794 A CN201410153794 A CN 201410153794A CN 103985734 B CN103985734 B CN 103985734B
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- solar cell
- silicon solar
- area
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Photovoltaic Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a kind of transparent display and preparation method thereof, it is related to display technology field, silicon solar cell is arranged by the transparent area in described display device, absorb luminous energy and be converted into electric energy in the vertical direction in the printing opacity direction with transparent area.A kind of transparent display, the viewing area of described transparent display includes transparent area and light tight area, the subregion of described transparent area is provided with least one silicon solar cell, described silicon solar cell absorbs luminous energy along the direction vertical with the printing opacity direction of transparent area and is converted into electric energy.
Description
Technical field
The present invention relates to display technology field, more particularly, to a kind of transparent display and preparation method thereof.
Background technology
With the continuous progress of Display Technique, new Display Technique is constantly by it has been proposed that and realize, Transparence Display product
Product are the new display products of such a.Transparence Display has wide range of application, can merge multi-point touch, intelligence
The technology such as display, as the terminal of public information display, used in general merchandise display window, refrigerator doors perspective, windshield glass of automobile, oneself
The every field such as dynamic vending machine, have the synergies such as displaying, interaction, advertisement, Transparence Display product is due to the use of its uniqueness
Scene and achievable intelligentized scene switch so that it also increasingly receives publicity in the application of extraordinary display field.
The displaying principle of the Transparence Display technology of OLED display is as shown in figure 1, display floater includes multiple display lists
Unit 100, each display unit includes red (R), green (G), the sub-pixel 10 of blue (B) three kinds of primary colours (hand over by grid line 31 data line 32
Fork-shaped becomes multiple sub-pixels 10), each sub-pixel 10 includes luminous zone 11 and transparent area 12, and wherein, luminous zone 11 is passed through
Organic Light Emitting Diode etc. is luminous to realize display, and transparent area 12 is not provided with any dot structure, is mainly used in printing opacity.And with send out
The raising of the brightness in light area 11, the light of transparent area 12 printing opacity is also more, thus improve the light transmittance of pixel, has reached thoroughly
The effect substantially shown.
Content of the invention
Embodiments of the invention provide a kind of transparent display and preparation method thereof, by saturating in described display device
Light area arranges silicon solar cell, absorbs luminous energy and is converted into electric energy in the vertical direction in the printing opacity direction with transparent area.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that：
Embodiments provide a kind of transparent display, the viewing area of described transparent display includes transparent area
With light tight area, the subregion of described transparent area is provided with least one silicon solar cell, described silicon solar cell
Absorb luminous energy along the direction vertical with the printing opacity direction of transparent area and be converted into electric energy.
Optionally, described silicon solar cell includes P-type semiconductor and N-type semiconductor, and described P-type semiconductor and described
N-type semiconductor is arranged on same layer.
Optionally, it is provided with intrinsic layer between described P-type semiconductor and described N-type semiconductor.
Optionally, described P-type semiconductor and described N-type semiconductor are heavy doping.
Optionally, described display device also includes grid line data line, the P-type semiconductor of described silicon solar cell or N
Type quasiconductor is electrically connected with described grid line and/or described data wire directly contact, provides telecommunications to described grid line and/or data wire
Number.
Optionally, described viewing area includes multiple sub-pixels, and each sub-pixel includes transparent area and light tight area, at least
The transparent area of one described sub-pixel is provided with silicon solar cell.
Optionally, the transparent area of each described sub-pixel is provided with a silicon solar cell.
Optionally, described display device is OLED display, and each described sub-pixel includes luminous zone and transparent area.
Optionally, described transparent area is provided with silicon solar cell near the subregion of luminous zone side.
Embodiments provide a kind of manufacture method of transparent display, the viewing area of described transparent display
Including transparent area and light tight area, methods described includes：
Silicon solar cell, described silicon solar cell edge are directly formed on the underlay substrate of described transparent area subregion
The direction vertical with the printing opacity direction of transparent area absorbs luminous energy and is converted into electric energy.
Optionally, the described underlay substrate in described transparent area subregion directly forms silicon solar cell specifically to wrap
Include：
Semiconductor layer is formed on underlay substrate, wherein, described semiconductor layer includes corresponding P-type semiconductor part and correspondence
N-type semiconductor part；
To described semiconductor layer, corresponding P-type semiconductor part and corresponding N-type semiconductor part carry out ion doping, shape respectively
Become P-type semiconductor and N-type semiconductor.
Optionally, described P-type semiconductor part corresponding to described semiconductor layer and corresponding N-type semiconductor part are carried out respectively
Ion doping specifically includes：
Using the first mask plate, to described quasiconductor, corresponding P-type semiconductor part carries out ion doping formation P-type semiconductor；
Using the second mask plate, to described quasiconductor, corresponding N-type semiconductor part carries out ion doping formation N-type semiconductor.
Optionally, described semiconductor layer also includes：Active semi-conductor.
Optionally, methods described also includes：
Underlay substrate forms barrier metal layer and Source and drain metal level, wherein, described barrier metal layer includes grid line, described
Source and drain metal level includes data wire；
Described grid line and/or described data wire are directly connect with the P-type semiconductor of described silicon solar cell or N-type semiconductor
Get an electric shock and connect.
Embodiments of the invention provide a kind of transparent display and preparation method thereof, the printing opacity of described transparent display
The subregion in area is provided with least one silicon solar cell, and described silicon solar cell is along the printing opacity direction with transparent area
Vertical direction absorbs luminous energy and is converted into electric energy, can be applicable to power supply or miscellaneous part or the equipment of display device, with
Save energy, realizes the effectively utilizes of photoelectricity.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is existing transparent display schematic diagram；
Fig. 2 is a kind of transparent display schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the A-A ' schematic cross-section of the display device shown in Fig. 2；
Fig. 4 is the B-B ' schematic cross-section of the display device shown in Fig. 2；
Fig. 5 is that a kind of method directly forming silicon solar cell on underlay substrate provided in an embodiment of the present invention is illustrated
Figure.
Reference：
100- display unit；10- sub-pixel；11- luminous zone；12- transparent area；21-P type quasiconductor；22-N type quasiconductor；
31- grid line；32- data wire.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
Embodiments provide a kind of transparent display, the viewing area of described transparent display includes transparent area
With light tight area, the subregion of described transparent area is provided with least one silicon solar cell, described silicon solar cell
Absorb luminous energy along the direction vertical with the printing opacity direction of transparent area and be converted into electric energy.
Taking traditional OLED display as a example, organic electroluminescent (EL) element that OLED display has and
The structures such as drive circuit are all generally opaque, these nontransparent device height can be integrated in each picture in design
Internal " region " not having nontransparent equipment of element, shows the raising of grey decision-making, remaining transparent region of pixel with pixel
Transmitted light is also more, thus improve the light transmittance of pixel, has reached transparent display effect.
It should be noted that the viewing area of transparent display includes transparent area and light tight area, wherein said light tight
Area is mainly used in a bright pixel, and transparent area is mainly used in printing opacity and allows display device to see object below etc..Then show
The position relationship in the transparent area in area and light tight area can be multiple.For example may be such that a pixel cell include red, green,
A blue and transparent transparent area or transparent area and light tight area are arranged etc. in the form of between-line spacing.For display
The particular location relation embodiment of the present invention in area's transparent area and light tight area is not specifically limited.
The described subregion in described transparent area is provided with least one silicon solar cell, described silicon solar cell
Absorb luminous energy along the direction vertical with the printing opacity direction of transparent area.It should be noted that as shown in Figure 2 and Figure 3, transparent area 12
Printing opacity direction is generally the direction vertical with underlay substrate, that is, in Fig. 3 dotted line the direction of arrow, in the embodiment of the present invention, described
Silicon solar cell mainly absorbs the luminous energy in the direction vertical with the printing opacity direction of transparent area 12, i.e. arrow shown in Fig. 2, Fig. 3
Direction, and convert light energy into electric energy, can be applicable to other electronic equipments.
A kind of transparent display provided in an embodiment of the present invention, the subregion of the transparent area of described transparent display
It is provided with least one silicon solar cell, and described silicon solar cell is inhaled along the direction vertical with the printing opacity direction of transparent area
Receive luminous energy and be converted into electric energy, can be applicable to power supply or miscellaneous part or the equipment of display device, with save energy, real
The effectively utilizes of existing photoelectricity.
Optionally, as shown in Figure 2 and Figure 3, described silicon solar cell includes P-type semiconductor 21 and N-type semiconductor 22, and
Described P-type semiconductor 21 and described N-type semiconductor 22 are arranged on same layer.
The trivalent element it should be noted that P-type semiconductor adulterates in Semiconducting Silicon Materials or germanium crystal；N-type is partly led
Body i.e. doping pentad in Semiconducting Silicon Materials or germanium crystal.The principle of silicon solar cell is P-type semiconductor and N-type half
When conductor is combined together, can form a special thin film in the interface region of two kinds of quasiconductors is PN junction.This be by
Many in the hole of P-type semiconductor, the free electron of N-type semiconductor is many.Concentration difference occurs, the electrons in N area are diffused into P area, P area
Hole can be diffused into N area, once diffusion be the formation of one by N point to P " internal electric field ", to stop the carrying out of diffusion.Directly
After reaching balance, it is the formation of a special thin layer, is the formation of PN junction.When by illumination, N-type semiconductor in PN junction
Hole is moved toward p type island region.And the electronics in p type island region moves toward N-type region, thus forming the electric current from N-type region to p type island region, then
Form electric potential difference in PN junction, which forms power supply.
In the embodiment of the present invention, as shown in Fig. 2 described P-type semiconductor 21 and described N-type semiconductor 22 be arranged on same
Layer, wherein P-type semiconductor 21 are the side near light.Can certainly be the side that N-type semiconductor 22 is near light, it is all not
The action principle of impact silicon solar cell.The embodiment of the present invention is only described in detail taking shown in the drawings as a example.
Optionally, it is provided with intrinsic layer between described P-type semiconductor and described N-type semiconductor.Form the PIN-type sun
Energy battery, sensitivity that is photosensitive and detecting radiation is more preferable.
Optionally, described P-type semiconductor and described N-type semiconductor are heavy doping.It should be noted that P-type semiconductor
The magnitude of current being its generation of heavy doping with described N-type semiconductor is big.Certainly, the supply object according to silicon solar cell, institute
Stating P-type semiconductor and described N-type semiconductor can also be to be lightly doped.
Optionally, as shown in Figure 2, Figure 4 shows, described display device also includes grid line 31 data line 32, described silicon solar
The P-type semiconductor of battery or N-type semiconductor are electrically connected with described grid line 31 and/or described data wire 32 directly contact, to described
Grid line 31 and/or data wire 32 provide the signal of telecommunication.
As shown in figure 4, the embodiment of the present invention is directly connect with described grid line 31 with the P-type semiconductor of described silicon solar cell
Get an electric shock and connect, as a example providing the signal of telecommunication to described grid line 31.It should be noted that P-type semiconductor and described grid line and/or described
The electrical connection of data wire directly contact can be directly connected to grid line and/or described data wire by via and metal wire, to
Grid line and/or described data wire provide the signal of telecommunication.Certainly, the electric energy of described silicon solar cell can also connect other conductions
Portion, provides the signal of telecommunication to other conductive parts.Then P-type semiconductor or N-type semiconductor can also be conductive with other by wire etc.
Portion electrically connects.
Optionally, described viewing area includes multiple sub-pixels, and each sub-pixel includes transparent area and light tight area, at least
The transparent area of one described sub-pixel is provided with silicon solar cell.The described transparent area setting at least one described sub-pixel
There is the transparent area setting silicon solar cell that silicon solar cell can be only in corresponding red sub-pixel.Can also be right
Answer the transparent area setting silicon solar cell of red sub-pixel and blue subpixels, and in the transparent area corresponding to green sub-pixels not
Setting silicon solar energy battery etc..Can be the transparent area setting silicon solar cell of the sub-pixel in part, with by silicon
Solaode produces electric energy, and other sub-pixels are not provided with silicon solar cell, to ensure the Transparence Display function of display device.
Preferably, the transparent area of each described sub-pixel is provided with a silicon solar cell.I.e. as shown in Fig. 2
The transparent area of corresponding redness (R) sub-pixel, blueness (G) sub-pixel and green (B) sub-pixel is respectively provided with silicon solar cell, this
Sample can increase the electric energy amount of translation of silicon solar cell on panel further.
Optionally, described display device is OLED display, and each described sub-pixel includes luminous zone and transparent area.I.e.
As shown in Fig. 2 red sub-pixel 10 includes luminous zone 11 and transparent area 12.It should be noted that because OLED display is
Self-emission display apparatus, then sub-pixel 10 include luminous zone 11 and transparent area 12.When display device is liquid crystal indicator, then institute
Stating sub-pixel can be including pixel region and transparent area, pass through pixel electrode in described pixel region and common electrode drive liquid crystal is inclined
Turn and realize display, in transparent area display device printing opacity light, reach Transparence Display effect.
Optionally, described transparent area is provided with silicon solar cell near the subregion of luminous zone side.I.e. as Fig. 2 institute
Show, transparent area 12 arranges silicon solar cell near the region of luminous zone 11 side.Silicon solar cell so can be reduced account for
With the area of too many luminous zone, improve the transparent effect of transparent display.
Embodiments provide a kind of manufacture method of transparent display, the viewing area of described transparent display
Including transparent area and light tight area, methods described includes：
Silicon solar cell, described silicon solar cell edge are directly formed on the underlay substrate of described transparent area subregion
The direction vertical with the printing opacity direction of transparent area absorbs luminous energy and is converted into electric energy.
Optionally, as shown in figure 5, silicon solar is directly formed on the described underlay substrate in described transparent area subregion
Battery specifically includes：
Step 101, semiconductor layer is formed on underlay substrate, wherein, described semiconductor layer includes corresponding P-type semiconductor portion
Divide and corresponding N-type semiconductor part.
The described semiconductor layer that formed on underlay substrate can be formation semiconductive thin film on underlay substrate, and passes through
Patterning processes form the semiconductor pattern including corresponding P-type semiconductor part and corresponding N-type semiconductor part.
Step 102, to described semiconductor layer corresponding P-type semiconductor part and corresponding N-type semiconductor part carry out respectively from
Son doping, forms P-type semiconductor and N-type semiconductor.
Optionally, described P-type semiconductor part corresponding to described semiconductor layer and corresponding N-type semiconductor part are carried out respectively
Ion doping specifically includes：
Using the first mask plate, to described quasiconductor, corresponding P-type semiconductor part carries out ion doping formation P-type semiconductor；
Using the second mask plate, to described quasiconductor, corresponding N-type semiconductor part carries out ion doping formation N-type semiconductor.
Using the first mask plate, to described quasiconductor, corresponding P-type semiconductor part carries out ion doping formation P-type semiconductor
Can be specifically only corresponding for semiconductor layer P-type semiconductor part to be exposed by the first mask plate, and other parts are carried out
Block, form P-type semiconductor so that the corresponding P-type semiconductor part exposing is carried out with ion doping.Using the second mask plate to institute
Stating the corresponding N-type semiconductor part of quasiconductor and carry out ion doping forming N-type semiconductor by the second mask plate only can be specifically
Corresponding for semiconductor layer N-type semiconductor part is exposed, and other parts is blocked, with to the corresponding N-type semiconductor exposing
Part carries out ion doping and forms N-type semiconductor.
Optionally, described semiconductor layer also includes：Active semi-conductor.It is also formed with thin film transistor (TFT) due on underlay substrate
In order to control pixel to charge, it can be formation semiconductor film on underlay substrate that described semiconductor layer also includes active semi-conductor
Film, and corresponding P-type semiconductor part, corresponding N-type semiconductor part and active semi-conductor figure are included by patterning processes formation
Case.Processing technology so can be reduced further, reduce production cost.
Optionally, methods described also includes：
Underlay substrate forms barrier metal layer and Source and drain metal level, wherein, described barrier metal layer includes grid line, described
Source and drain metal level includes data wire；
Described grid line and/or described data wire are directly connect with the P-type semiconductor of described silicon solar cell or N-type semiconductor
Get an electric shock and connect.
It should be noted that on underlay substrate in addition to the thin film that the embodiment of the present invention improves or Rotating fields, also including it
His thin film or Rotating fields are to realize display function.Wherein, underlay substrate is formed with barrier metal layer, including grid line and grid
Pole, Source and drain metal level, including data wire and source electrode and drain electrode, grid line provides signal to grid, and data wire carries to source electrode
For source signal, drain and charge to pixel electrode, wherein, grid, source electrode and three poles draining as thin film transistor (TFT).
In the embodiment of the present invention, the P-type semiconductor of described grid line and/or described data wire and described silicon solar cell or
N-type semiconductor directly contact electrically connects, you can directly apply to driving film crystal with the electric energy changing silicon solar cell
Pipe.Certainly, the electric energy of silicon solar cell conversion can also be used for other conductive parts by other voltages process etc..
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, all should contain
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be defined by described scope of the claims.
Claims (14)
1. a kind of transparent display, the viewing area of described transparent display includes transparent area and light tight area, and its feature exists
In, the subregion of described transparent area is provided with least one silicon solar cell, described silicon solar cell along and printing opacity
The direction that the printing opacity direction in area is vertical absorbs luminous energy and is converted into electric energy.
2. display device according to claim 1 is it is characterised in that described silicon solar cell includes P-type semiconductor and N
Type quasiconductor, and described P-type semiconductor and described N-type semiconductor are arranged on same layer.
3. display device according to claim 2 it is characterised in that described P-type semiconductor and described N-type semiconductor it
Between be provided with intrinsic layer.
4. the display device according to Claims 2 or 3 is it is characterised in that described P-type semiconductor and described N-type semiconductor
It is heavy doping.
5. the display device according to Claims 2 or 3 is it is characterised in that described display device also includes grid line data
Line, the P-type semiconductor of described silicon solar cell or N-type semiconductor and described grid line and/or described data wire directly contact electricity
Connect, provide the signal of telecommunication to described grid line and/or data wire.
6. display device according to claim 1 is it is characterised in that described viewing area includes multiple sub-pixels, Mei Yizi
Pixel includes transparent area and light tight area, and the transparent area of at least one described sub-pixel is provided with silicon solar cell.
7. display device according to claim 6 is it is characterised in that the transparent area of each described sub-pixel is provided with one
Individual silicon solar cell.
8. display device according to claim 7 is it is characterised in that described display device is OLED display, each
Described sub-pixel includes luminous zone and transparent area.
9. display device according to claim 8 it is characterised in that described transparent area near luminous zone side part area
Domain is provided with silicon solar cell.
10. a kind of manufacture method of transparent display, the viewing area of described transparent display includes transparent area and light tight
Area is it is characterised in that methods described includes：
Silicon solar cell is directly formed on the underlay substrate of described transparent area subregion, described silicon solar cell along with saturating
The direction that the printing opacity direction in light area is vertical absorbs luminous energy and is converted into electric energy.
11. manufacture methods according to claim 10 are it is characterised in that underlay substrate in described transparent area subregion
The upper silicon solar cell that directly formed specifically includes：
Semiconductor layer is formed on underlay substrate, wherein, described semiconductor layer includes corresponding P-type semiconductor part and corresponding N-type
Semiconductor portions；
To described semiconductor layer, corresponding P-type semiconductor part and corresponding N-type semiconductor part carry out ion doping respectively, form P
Type quasiconductor and N-type semiconductor.
12. manufacture methods according to claim 11 are it is characterised in that correspond to P-type semiconductor portion to described semiconductor layer
Divide and corresponding N-type semiconductor part carries out ion doping respectively and specifically includes：
Using the first mask plate, to described quasiconductor, corresponding P-type semiconductor part carries out ion doping formation P-type semiconductor；
Using the second mask plate, to described quasiconductor, corresponding N-type semiconductor part carries out ion doping formation N-type semiconductor.
13. manufacture methods according to claim 11 are it is characterised in that described semiconductor layer also includes：Active semi-conductor.
14. manufacture methods according to claim 10 are it is characterised in that methods described also includes：
Underlay substrate forms barrier metal layer and Source and drain metal level, wherein, described barrier metal layer includes grid line, described source and drain
Metal level includes data wire；
Described grid line and/or described data wire are electric with the P-type semiconductor of described silicon solar cell or N-type semiconductor directly contact
Connect.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153794.5A CN103985734B (en) | 2014-04-16 | 2014-04-16 | A kind of transparent display and preparation method thereof |
| US14/436,570 US9502479B2 (en) | 2014-04-16 | 2014-08-21 | Transparent display device and manufacturing method thereof |
| PCT/CN2014/084934 WO2015158089A1 (en) | 2014-04-16 | 2014-08-21 | Transparent display device and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153794.5A CN103985734B (en) | 2014-04-16 | 2014-04-16 | A kind of transparent display and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103985734A CN103985734A (en) | 2014-08-13 |
| CN103985734B true CN103985734B (en) | 2017-03-08 |
Family
ID=51277638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410153794.5A Active CN103985734B (en) | 2014-04-16 | 2014-04-16 | A kind of transparent display and preparation method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9502479B2 (en) |
| CN (1) | CN103985734B (en) |
| WO (1) | WO2015158089A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985734B (en) * | 2014-04-16 | 2017-03-08 | 京东方科技集团股份有限公司 | A kind of transparent display and preparation method thereof |
| CN104201292B (en) * | 2014-08-27 | 2019-02-12 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device and preparation method thereof |
| CN104867964B (en) | 2015-05-18 | 2019-02-22 | 京东方科技集团股份有限公司 | Array substrate, its manufacturing method and organic LED display device |
| CN105070218A (en) * | 2015-09-10 | 2015-11-18 | 上海和辉光电有限公司 | Solar display screen and solar mobile phone |
| KR102435391B1 (en) * | 2015-09-25 | 2022-08-23 | 삼성디스플레이 주식회사 | Display device |
| KR102500161B1 (en) * | 2016-01-15 | 2023-02-16 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| US11108002B2 (en) * | 2016-09-26 | 2021-08-31 | Pioneer Corporation | Light emitting device |
| CN109904189B (en) * | 2019-03-15 | 2021-03-02 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and display device |
| CN110047906B (en) * | 2019-05-21 | 2022-10-18 | 京东方科技集团股份有限公司 | Display device based on transparent photodiode, display panel and manufacturing method thereof |
| WO2020237507A1 (en) * | 2019-05-28 | 2020-12-03 | 深圳市柔宇科技有限公司 | Oled double-sided display panel |
| CN110850616A (en) * | 2019-11-29 | 2020-02-28 | 上海天马微电子有限公司 | Display device |
| CN111524955A (en) * | 2020-05-08 | 2020-08-11 | 义乌清越光电科技有限公司 | Self-generating display screen and display equipment |
| US11832500B2 (en) * | 2021-10-14 | 2023-11-28 | L3Harris Technologies, Inc. | Multi-functional pixels designed for transmission matching in transparent displays having transparent regions between the pixels |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681774A (en) * | 2013-12-31 | 2014-03-26 | 北京维信诺科技有限公司 | OLED (Organic Light Emitting Diode) display device for integrating solar batteries |
| CN103700691A (en) * | 2013-12-24 | 2014-04-02 | 京东方科技集团股份有限公司 | Display substrate and display device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7206044B2 (en) * | 2001-10-31 | 2007-04-17 | Motorola, Inc. | Display and solar cell device |
| US20070102035A1 (en) * | 2005-10-31 | 2007-05-10 | Xiai (Charles) Yang | Method and Structure for Integrated Solar Cell LCD Panel |
| CA2617752A1 (en) * | 2007-12-24 | 2009-06-24 | Ignis Innovation Inc | Power scavenging and harvesting for power efficient display |
| US20100114679A1 (en) * | 2008-11-02 | 2010-05-06 | Yang Pan | Programmable advertising panel powered by solar cells and communiation means thereof |
| CN101813849B (en) | 2009-02-19 | 2013-03-13 | 北京京东方光电科技有限公司 | Colored film substrate, manufacturing method thereof and liquid crystal display panel |
| US20110109853A1 (en) * | 2009-11-06 | 2011-05-12 | University Of Central Florida Research Foundation, Inc. | Liquid Crystal Displays with Embedded Photovoltaic Cells |
| KR101156434B1 (en) * | 2010-01-05 | 2012-06-18 | 삼성모바일디스플레이주식회사 | Organic light emitting display device |
| TWI418912B (en) * | 2010-09-13 | 2013-12-11 | Wintek China Technology Ltd | Display device |
| KR20130006936A (en) * | 2011-06-27 | 2013-01-18 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN103487989A (en) * | 2012-06-12 | 2014-01-01 | 宏碁股份有限公司 | Transparent display device |
| TWI610112B (en) * | 2012-09-17 | 2018-01-01 | 友達光電股份有限公司 | Display panel and method of making the same |
| CN103137024B (en) | 2013-02-04 | 2015-09-09 | 小米科技有限责任公司 | A kind of display device and a kind of mobile terminal |
| CN103456243B (en) * | 2013-08-23 | 2016-05-11 | 京东方科技集团股份有限公司 | A kind of curtain wall |
| CN103474448A (en) * | 2013-08-30 | 2013-12-25 | 京东方科技集团股份有限公司 | Electroluminescent device and display device |
| CN103529581A (en) * | 2013-10-18 | 2014-01-22 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN103985734B (en) | 2014-04-16 | 2017-03-08 | 京东方科技集团股份有限公司 | A kind of transparent display and preparation method thereof |
| CN203774331U (en) * | 2014-04-16 | 2014-08-13 | 京东方科技集团股份有限公司 | Transparent display device |
-
2014
- 2014-04-16 CN CN201410153794.5A patent/CN103985734B/en active Active
- 2014-08-21 WO PCT/CN2014/084934 patent/WO2015158089A1/en active Application Filing
- 2014-08-21 US US14/436,570 patent/US9502479B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700691A (en) * | 2013-12-24 | 2014-04-02 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN103681774A (en) * | 2013-12-31 | 2014-03-26 | 北京维信诺科技有限公司 | OLED (Organic Light Emitting Diode) display device for integrating solar batteries |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160181330A1 (en) | 2016-06-23 |
| WO2015158089A1 (en) | 2015-10-22 |
| US9502479B2 (en) | 2016-11-22 |
| CN103985734A (en) | 2014-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103985734B (en) | A kind of transparent display and preparation method thereof | |
| CN106558594B (en) | Array substrate, display panel, display device and preparation method | |
| CN102403334B (en) | Organic electroluminescent display device | |
| CN104393024B (en) | OLED pixel structure as well as preparation method, ultraviolet light detection method and ultraviolet light detection device thereof | |
| CN103926739B (en) | Display panel and display device | |
| TW508974B (en) | Electroluminescent display device | |
| CN108010947A (en) | A kind of organic electroluminescence display panel and organic light-emitting display device | |
| CN108877653A (en) | Pixel circuit, display device and its manufacturing method | |
| CN104600200B (en) | A kind of array base palte and display panel | |
| CN108376696A (en) | Terminal and display screen | |
| CN110061044A (en) | Organic light emitting display panel and display device | |
| CN106328689A (en) | Thin-film transistor substrate and display device comprising the same | |
| CN106952940A (en) | A kind of organic electroluminescence display panel and organic light-emitting display device | |
| CN108231830A (en) | Organic light-emitting display device | |
| CN106601778A (en) | OLED backboard and manufacturing method thereof | |
| CN106531763A (en) | Display device | |
| CN106409845A (en) | Switch element, the preparation method of the switch element, array substrate and display apparatus | |
| CN106653817A (en) | Transparent oled display panel | |
| CN101997004A (en) | Semiconductor device and method for manufacturing the same | |
| CN104637950A (en) | Driving back plate of thin-film transistor and method for manufacturing driving back plate | |
| CN103187423A (en) | Oxide thin film transistor array substrate, manufacturing method of array substrate, and display panel | |
| CN107369702A (en) | A kind of OLED display panel and preparation method thereof | |
| CN106997893A (en) | Organic light-emitting display device and its manufacture method | |
| CN109887965B (en) | Display module, manufacturing method thereof and display device | |
| CN110289294A (en) | Display panel and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |