CN103971724B

CN103971724B - Memory, storage control, storage system and its operating method

Info

Publication number: CN103971724B
Application number: CN201410045218.9A
Authority: CN
Inventors: 金经纶; 尹翔镛
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2013-02-06
Filing date: 2014-02-07
Publication date: 2018-09-18
Anticipated expiration: 2034-02-07
Also published as: CN103971724A

Abstract

The present invention relates to memory, storage control, storage system and its operating methods.In one embodiment, method includes executing read operation on a memory, and determine whether execution reliability demonstration read operation based on count value and reference value by storage control.Number of the count value based on the read command for being issued to memory by storage control, and reliability demonstration read operation from least one storage unit associated at least one of memory unselected word line for reading data.Unselected word line is wordline non-selected during read operation.The method further includes the reliability demonstration read operation executed based on the determination at least one unselected word line.

Description

Memory, storage control, storage system and its operating method

Cross reference to related applications

It is required that the South Korea patent application 10-2013-0013497 submitted in Korean Intellectual Property Office on 2 6th, 2013 Number, entire contents are incorporated by reference herein.

Technical field

Present inventive concept described herein is related to a kind of semiconductor devices, more particularly, to a kind of storage control, deposits The operating method of storage system and storage system.

Background technology

Semiconductor storage unit is to use such as silicon（Si）, germanium（Ge）, GaAs（GaAs）, indium phosphide（InP）Etc. The memory device of semiconductor manufacturing.Semiconductor storage unit is classified as volatile memory device and nonvolatile semiconductor memory member.

Volatile memory device can lose the content of storage when power is off.Volatile memory device includes static state RAM （SRAM）, dynamic ram（DRAM）, synchronous dram（SDRAM）Etc..Nonvolatile semiconductor memory member is protected when power is off Hold the content of storage.Nonvolatile semiconductor memory member includes read-only memory（ROM）, programming ROM（PROM）, electrically programmable ROM （EPROM）, electrically erasable ROM（EEPROM）, flash memory device, phase transformation RAM（PRAM）, magnetic RAM（MRAM）, electricity Hinder RAM（RRAM）, ferroelectric RAM（FRAM）Etc..

Memory can be used together with the storage control for control memory.Storage control may be used as host Interface between memory.In addition, storage control can execute the operation that is not indicated by host to manage memory.Not by The operation of host instruction can be referred to as consistency operation.

Invention content

At least one embodiment is related to a kind of method of operation storage control.

In one embodiment, it the method includes executing read operation on a memory, and is based on by storage control Count value and reference value determine whether to execute reliability demonstration read operation.The count value is based on being issued to by storage control depositing The number of the read command of reservoir, and reliability demonstration read operation is used for from related at least one of memory unselected word line At least one storage unit of connection reads data.Unselected word line is wordline non-selected during read operation.The method further includes The reliability demonstration read operation at least one unselected word line is executed based on the determination.

In one embodiment, the method further includes generating random number to be used as with reference to value.For example, the generation can give birth to At random number so that the average value of the random number generated with the time approaches desired value.In one embodiment, the method It include the erasing cycle information adjustment desired value based on memory.

In one embodiment, the determining execution reliability if the count value is greater than or equal to random number Verify read operation.

In one embodiment, the method further includes multiple if the determining execution reliability demonstration read operation Position count value.

In one embodiment, the method further includes that storage counts in memory if storage control is powered down Value and random number.

In one embodiment, the count value is used for the total data area of memory.

In one embodiment, the method further includes keeping based on each in multiple pieces of groups in memory Numerical value and random number.Here, the determination uses count value associated with the block group that read operation is directed toward and random number.At one In embodiment, the reliability demonstration read operation for executing the unselected word line in the block group being directed toward for read operation.

In one embodiment, the method further includes keeping being used for multiple countings of each in the block in memory Value and random number.Here, the determination uses count value associated with the block that read operation is directed toward and random number.Implement at one In example, the reliability demonstration read operation executed for the unselected word line in the block group that read operation is directed toward.

In one embodiment, at least one unselected word line executed for being adjacent to selected word line is reliable Property verification read operation.For example, the execution can be executed for if kth wordline is selected word line（k+1）Wordline can Read operation is verified by property.As another example, the execution can be executed for if kth wordline is selected word line（k- 1）The reliability demonstration read operation of wordline.As also an example, if kth wordline is selected word line the execution can execute For（k-1）Wordline and（k+1）The reliability demonstration read operation of wordline.In this illustration, the reliability demonstration is read Operation may include, after kth wordline is read, from（k-1）Wordline is read, then from the（k+1）Wordline is read.As an alternative, The reliability demonstration read operation may include, after kth wordline is read, from（k+1）Wordline is read, then from the（k-1） Wordline is read.Additionally or alternatively, the reliability demonstration read operation may include, in kth wordline by before reading, from（k-1） Wordline is read, and from the after kth wordline is read（k+1）Wordline is read.As another replacement, the reliability demonstration read operation May include, in kth wordline by before reading, from（k+1）Wordline is read, and from the after kth wordline is read（k-1）Wordline It reads.It is replaced as another, the reliability demonstration read operation may include, after kth wordline is read, from the（k-1）Wordline It reads, and from the after next selected word line is read（k+1）Wordline is read.In another replacement, behaviour is read in the reliability demonstration Work may include, after kth wordline is read, from（k+1）Wordline is read, and from the after next selected word line is read （k-1）Wordline is read.

In one embodiment, the execution is executed for the reliability for the only one unselected word line for being adjacent to selected word line Verify read operation.For example, if kth wordline is selected word line, the execution can be executed for（k-1）Wordline it is reliable Property verification read operation.In another example, if kth wordline is selected word line, the execution can be executed for（k+1） The reliability demonstration read operation of wordline.

In one embodiment, the reliability demonstration read operation based on unselected word line whether store least significant bit, in Between one or more of significance bit and most significant bit, using read voltage from unselected word line read.

In one embodiment, the memory is configured to program storage unit by using multiple steps.Institute It includes 1 step programming operation, coarse programming operation and fine program operation to state multiple steps.Here, if with unselected word line phase Associated storage unit is currently programmed according to coarse programming operation, then the execution, which is skipped, executes reliability demonstration read operation.

In one embodiment, the unselected word line is open（open）Wordline, and it is connected to the word of the opening Each storage unit of line is in erase status.

In one embodiment, the reliability demonstration read operation for executing the wordline for each opening.

In one embodiment, the execution, which is included in, reads after selected word line reading from the wordline of the opening.

In one embodiment, the execution is included in before selected word line reading from the wordline of the opening At least one wordline is read, and is read from other wordline of at least one of wordline of the opening after being read from selected word line.

In one embodiment, the execution, which is included in, reads before selected word line reading from the wordline of the opening.

In one embodiment, the execution is included in after selected word line reading from the wordline of the opening At least one reading, and read from other wordline of at least one of wordline of the opening after the reading of next selected word line.

In one embodiment, the execution executes at least one unselected word line for being adjacent to the selected word line Reliability demonstration read operation, and then execute if there is the wordline arbitrarily opened at least one opening wordline it is reliable Property verification read operation.The storage unit for being connected to open wordline is in erase status.

In one embodiment, the method further includes determining whether the data read during reliability demonstration read operation are full Sufficient condition, and the executive control operation if meeting condition.For example, the condition can be, in reliability demonstration read operation Whether the bit error rate for the data that period reads is more than threshold value.Here, the control operation can be by the block including selected word line Data to copy to new block and close include described piece of selected word line.As another example, the condition can be, Whether the number for the cut-off storage unit read during reliability demonstration read operation is more than threshold value.Here, control operation can be with Closing includes the block of selected word line.

In another embodiment of the method for operation memory, the method includes being based on read command to be read by memory According to.The read command is used for the selected word line of memory.The method further includes if count value meets threshold requirement by depositing Reservoir reads data from unselected word line.The unselected word line is not selected word line, and number of the count value based on read command.

At least one embodiment is directed toward a kind of method of operation storage system.

In one embodiment of the method, the method includes being determined based on count value and reference value by storage control Whether reliability demonstration read operation is executed.Number of the count value based on the read operation executed by the storage control on memory Mesh, and reliability demonstration read operation is used for from least one storage associated at least one of memory unselected word line Unit reads data.The unselected word line is wordline non-selected during read operation.If the method further includes the determination It determines and executes reliability demonstration read operation, then read data from unselected word line by memory under the control of storage control.

At least one embodiment is directed toward a kind of method of operation Nonvolatile memory system.In one embodiment, institute The method of stating includes being chosen on the non-volatile memory cells of selected word line in the block in being connected to nonvolatile semiconductor memory member Read operation is executed, and execution reliability demonstration read operation is determined whether based on count value and reference value by storage control.Institute Number of the count value based on the read command for being issued to nonvolatile memory by storage control is stated, and behaviour is read in reliability demonstration It acts on from least one non-volatile memory cells associated at least one unselected word line in the block is chosen and reads threshold value electricity Pressure distribution.The unselected word line is non-selected during read operation and unprogrammed after an erase operation wordline.Institute The method of stating further includes the reliability demonstration read operation executed based on the determination at least one unselected word line.

Another embodiment of the method, which is included in be connected in nonvolatile semiconductor memory member, is chosen selected word in the block Read operation is executed on the non-volatile memory cells of line, and executes reliability demonstration read operation.Behaviour is read in the reliability demonstration It acts on from least one non-volatile memory cells associated at least one unselected word line in the block is chosen and reads data.Institute State the wordline that unselected word line is non-selected during read operation.The method further includes the result based on reliability demonstration read operation Determine whether to execute the post-processing for being chosen block（post process）.

At least one example embodiment is related to a kind of storage control.

In one embodiment, the storage control includes：Counter is configured to based on from storage control to depositing The number for the read command that reservoir is sent out generates count value；And Read Controller, it is configured to execute read operation and be configured to Determine whether to execute reliability demonstration read operation based on count value and reference value.The reliability demonstration read operation be used for from deposit The associated at least one storage unit of at least one of reservoir unselected word line reads data.The unselected word line is in read operation Period non-selected wordline.The Read Controller is configured to be executed based on the determination at least one unselected word line Reliability demonstration read operation.

In one embodiment, the storage control further includes the first register for being configured to store desired value.

In one embodiment, the storage control further includes being configured to generate the random of random number based on desired value Number generator.Here, the Read Controller is configured to test to determine whether to execute reliability using random number as with reference to value Demonstrate,prove read operation.

In one embodiment, the storage control further includes the letter for storing the program/erase period about memory Second register of breath.Here, the storage control is configured to change desired value based on described information.

At least one embodiment is related to a kind of storage system.

In one embodiment, the storage system includes at least one processor and storage control.The storage control Device processed is configured to control memory, and the storage control is configured to determine whether to hold based on count value and reference value Row reliability demonstration read operation.Number of the count value based on the read command executed by the storage control on memory, and And reliability demonstration read operation is used for from least one storage unit associated at least one of memory unselected word line Read data.The unselected word line is wordline non-selected during read operation.The storage control is configured to based on described Determine the reliability demonstration read operation executed at least one unselected word line.

In one embodiment, the memory is nonvolatile memory.For example, the memory includes storage unit String, each string includes the multiple storage units being connected in series with, and multiple storage units in going here and there and different wordline correlations Connection.

Description of the drawings

From description referring to the drawings, above and other object and feature will be apparent, and run through different attached drawings, phase Same reference numeral refers to identical part, unless otherwise indicated, and wherein

Fig. 1 is the block diagram for the computing system for schematically illustrating the embodiment according to present inventive concept；

Fig. 2 is to schematically illustrate nonvolatile memory（nonvolatile memory,NVM）Storage unit frame Figure；

Fig. 3 is the circuit diagram for showing to be applied to the voltage conditions of storage unit in read operation；

Fig. 4 is the table for the interference for showing to generate when the read operation iteration in the particular word line of nonvolatile memory；

Fig. 5 is shown when the particular word line relative to nonvolatile memory is alternately and when being iteratively performed read operation The table of the interference of generation；

Fig. 6 is the flow chart of the operating method for the storage system for showing the embodiment according to present inventive concept；

Fig. 7 is the flow chart for the condition for showing the reliability demonstration read operation for storage control；

Fig. 8 A are the flow charts for showing to read method according to the reliability demonstration of the embodiment of present inventive concept；

Fig. 8 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A；

Fig. 8 C are another embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure；

Fig. 8 D are a further embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure；

Fig. 8 E are a further embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure；

Fig. 9 A are the flow charts for showing to read method according to the reliability demonstration of another embodiment of present inventive concept；

Fig. 9 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 9 A；

Figure 10 A are the flow charts for showing to read method according to the reliability demonstration of a further embodiment of present inventive concept；

Figure 10 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Figure 10 A；

Figure 11 A show the example for the selection read voltage being applied in reliability demonstration read operation；

Figure 11 B show another example for the selection read voltage being applied in reliability demonstration read operation；

Figure 11 C show an also example for the selection read voltage being applied in reliability demonstration read operation；

Figure 11 D show an also example for the selection read voltage being applied in reliability demonstration read operation；

Figure 11 E show an also example for the selection read voltage being applied in reliability demonstration read operation；

Figure 11 F show an also example for the selection read voltage being applied in reliability demonstration read operation；

Figure 12 is the figure for the method for showing storage control management random number and count value；

Figure 13 A show that the example scenarios of interference can be generated in the wordline of the opening of nonvolatile memory；

Figure 13 B show that another example scenarios of interference can be generated in the wordline of the opening of another volatile memory；

Figure 13 C show that another example scenarios of interference can be generated in the wordline of the opening of nonvolatile memory；

Figure 14 A are the flow charts for showing to read method according to the reliability demonstration of a further embodiment of present inventive concept；

Figure 14 B show to read the example of the reliability demonstration read operation of method according to the reliability demonstration of Figure 14 A；

Figure 15 is the figure for the another method for showing storage control management random number and count value；

Figure 16 is the exemplary flow chart then operated for showing to run after reliability demonstration read operation；

Figure 17 is another exemplary flow chart for the rear operation for showing to run after reliability demonstration read operation；

Figure 18 A are the first exemplary tables of the rear operation for showing to run after reliability demonstration read operation；

Figure 18 B are the second exemplary tables of the rear operation for showing to run after reliability demonstration read operation；

Figure 19 is the block diagram for the storage control for schematically illustrating another embodiment according to present inventive concept；

Figure 20 is the block diagram for the storage control for schematically illustrating a further embodiment according to present inventive concept；

Figure 21 is the block diagram of the application for the storage system for schematically illustrating the embodiment according to present inventive concept；

Figure 22 is the block diagram for the storage card for schematically illustrating the embodiment according to present inventive concept；And

Figure 23 is the block diagram for the solid state drive for schematically illustrating the embodiment according to present inventive concept.

Specific implementation mode

It will be described in detail with reference to the accompanying drawings embodiment.However, present inventive concept can be come specifically in fact with many different forms It is existing, and be not necessarily to be construed as being limited only to shown embodiment.On the contrary, provide these embodiments as an example, so that The disclosure is full and complete, and the concept of present inventive concept is fully conveyed to those skilled in the art.To about the present invention Some embodiments of design do not describe known process, element and technology.Unless otherwise mentioned, it is retouched with what is write out throughout attached drawing It states, similar reference marker indicates similar element, thus will not repeated description.In attached drawing, for clarity, it may be exaggerated The size and relative size of layer and region.

It will be understood that although herein different members may be described using word " first ", " second ", " third " etc. Part, component, regions, layers, and/or portions, but these elements, component, regions, layers, and/or portions should not be limited by these words System.These words are used only for an element, component, region, layer or part and another element, component, region, layer or portion Subregion separates.Thus, first element, first assembly, first area, first layer or first part discussed below can also be by The referred to as introduction of second element, the second component, second area, the second layer or second part without departing from present inventive concept.

For ease of description, herein can with use space relative, as " ... under ", " lower section ", "lower", " below ", " top ", "upper" etc., come describe shown in figure an elements or features with it is other（It is multiple）Element or（It is multiple）Feature Relationship.It will be understood that spatial relationship word intention cover other than the direction described in attached drawing, device using or Different directions in operation.For example, if the device in attached drawing is reversed, be described as be in other elements or feature " under Side ", " under " or the orientation of element of " following " " top " in the other elements or feature will be become.Thus, it is exemplary Word " lower section " and following " can cover above and below both direction.It can make device that there are other directions（Be rotated by 90 ° or Other directions）, and spatial relation description word used herein should do respective explanations.In addition, it will also be understood that being referred to as position when one layer In two layers " between " when, it can be unique layer between described two layers, or there may also be one or more therebetween Layer.

Term used herein is not intended to limitation present inventive concept just for the sake of description specific embodiment.Here make Singulative is also intended to include plural form, unless context clearly provides opposite instruction.It will also be understood that when in this theory In bright book use word " include " and or " include " when, show there are described feature, entirety, step, operation, element and/ Or component, but do not preclude the presence or addition of other one or more features, entirety, step, operation, element, component and/or they Combination.As employed herein, term "and/or" includes that one or more correlations are listed any one in project and owned Combination.In addition, word " illustrative " is intended to indicate example or illustration.

It will be understood that when an element or layer be referred to as another element or layer " on ", " connection " or " coupled " to another When one element or layer or " neighbouring " another element or layer, it can directly on another element or layer, be directly connected to or It is couple to another element or layer or is directly adjacent to another element or layer, or there may also be elements or layer between two parties.Phase Instead, when an element be referred to as " direct " on another element or layer, " being directly connected to " or " being directly coupled to " another member When part layer or " close to " another element or layer, there is no elements or layer between two parties.

Unless otherwise defined, otherwise all terms used herein（Including technical terms and scientific terms）It is possessed to contain Justice is identical as the normally understood meaning of present inventive concept those of ordinary skill in the art.It will also be understood that term, such as usually make Term those of defined in dictionary, it should which meaning possessed by being interpreted is with them in related field and/or this explanation Meaning in the context of book is consistent, without should ideally or excessively formally be explained to it, except not here clear Ground is so defined.

Term " selected word line " can be used to refer to being connect with by the cell transistor write or read in a plurality of wordline Wordline.Term " unselected word line " can be used to refer to the remaining wordline other than selected word line in a plurality of wordline.

Term " selected storage unit " can be used to refer to the storage that will be write or read in multiple storage units Unit.Term " unselected storage unit " can be used to refer to remaining other than selected storage unit in multiple storage units Storage unit.

Fig. 1 is the block diagram for schematically illustrating the computing system 1000 according to the embodiment of present inventive concept.Referring to Fig.1, it counts Calculation system 1000 may include host 1100, storage control 1200 and nonvolatile memory 1300.

Host 1100 may be configured to access nonvolatile memory 1300 by storage control 1200.Host 1100 Can use nonvolatile memory 1300 as storage device or one or more electronic equipments of memory.For example, main Machine 1100 may include such as computer, notebook computer, smart phone, Intelligent flat, smart television, net book etc. it The electronic equipment of class.

Storage control 1200 may be configured to access nonvolatile memory 1300 according to the control of host 1100.It deposits Storage controller 1200 can be received from host 1100 write, read or erasing order is to control the writing of nonvolatile memory 1300, read Or erasing operation.Storage control 1200 can execute non-volatile for controlling in the case of the instruction of no host 1100 A variety of consistency operations of memory 1300.Storage control 1200 can control the execution of nonvolatile memory 1300 reliability and test Demonstrate,prove read operation.As will be described below in more detail, reliability demonstration read operation be used for from at least one unselected word line phase Associated at least one storage unit reads data.In addition, reliability demonstration read operation can be not from host 1100 In the case of the input of read command, the read operation on the memory space of nonvolatile memory 1300.Storage control 1200 Reliability demonstration read operation can be executed to improve the reliability of nonvolatile memory 1300.

Storage control 1200 may include reliability demonstration read register 1210, randomizer 1220, counter 1230, control unit 1240 and error correction unit 1250 are read.

Reliability demonstration read register 1210 can store reliable for what is run under the control of storage control 1200 Property verification read operation various information.It is tested about reliability of operation for example, reliability demonstration read register 1210 can be stored Demonstrate,prove read operation frequency information, about reliability of operation verify read operation number information, about execute reliability test Demonstrate,prove the information of position etc. of read operation.Reliability demonstration read register 1210 can be by external equipment（For example, host 1100 or Test equipment）Programming.

Randomizer 1220 can based on the information being stored in reliability demonstration read register 1210 generate with Machine number.For example, randomizer 1220 can be based on the desired value being stored in reliability demonstration read register 1210（Example Such as, the frequency of reliability of operation verification read operation）To be sequentially generated random number.Herein, the average value of random number can have There is the desired value.Alternatively, the average value of the random number generated with the time can approach desired value.

Counter 1230 can be to the thing for the read command for being issued to nonvolatile memory 1300 by storage control 1200 Part is counted.For example, count value can be increased whenever read command sends out hour counter 1230 by storage control 1200.It can replace Ground is changed, counter 1230 can be with the count value of each region of managing non-volatile memory 1300.It is deposited whenever with non-volatile When the corresponding read command in first area of reservoir 1300 is sent out by storage control 1200, counter 1230 can increase by first Count value.Whenever read command corresponding with the second area of nonvolatile memory 1300 is sent out by storage control 1200 When, counter 1230 can increase by the second count value.

Random number can be received from randomizer 1220 and receive meter from counter 1230 by reading control unit 1240 Numerical value.When count value equals or exceeds random number, the execution of nonvolatile memory 1300 can be controlled by reading control unit 1240 Reliability demonstration read operation.In addition, in response to read command corresponding with the region with the count value for equaling or exceeding random number And address, the execution reliability demonstration read operation of nonvolatile memory 1300 can be controlled by reading control unit 1240.Based on reliable Property verification read operation as a result, read control unit 1240 can control nonvolatile memory 1300 execute after operate.

Error correction unit 1240 can will be written to non-volatile deposit by being added to for the parity information of error correction Data in reservoir 1300.Error correction unit 1240 can be based on the parity information for reading data, to from nonvolatile memory 1300 data read execute error correction.

Nonvolatile memory 1300 can be operated according to the control of storage control 1200.Nonvolatile memory 1300 May include such as flash memory, PRAM, MRAM, RRAM, FRAM, etc. nonvolatile memory at least one It is a.

Storage control 1200 and nonvolatile memory 1300 may be constructed stores data according to the control of host 1100 Storage system.

Fig. 2 is the block diagram for the storage unit MC for schematically illustrating nonvolatile memory 1300.With reference to Fig. 2, storage unit MC can be connect with wordline WL1 to WL8 and bit line BL1 to BL4.Storage unit MC can be arranged along row and column.For example, along row The storage unit of direction arrangement can be connect with wordline jointly.Storage unit along column direction arrangement can connect with bit line jointly It connects.Along the storage unit of row arrangement, that is, the storage unit being connect jointly with wordline can form a page P.

Each in storage unit MC can store one or more bits.When each storage unit MC store two or When more bits, one page may include multiple logical page (LPAGE)s.The least significant bit being stored in the storage unit MC in page P（LSB） It may be constructed a logical page (LPAGE), and the most significant bit in the storage unit MC being stored in page P（MSB）It may be constructed another logic Page.When storage unit MC stores least significant bit（LSB）And most significant bit（MSB）Between center significance bit（central Significantbit, CSB）When, center significance bit（CSB）It may be constructed an also logical page (LPAGE).

In fig. 2 it is shown that storage unit MC shows with what eight wordline WL1 to WL8 and four bit line BL1 to BL4 were connect Example.However, present inventive concept is not limited to this.Nonvolatile memory 1300（Referring to Fig.1）The number of storage unit can be with It is unrestricted.In addition, the number for the bit being stored in each storage unit MC can be unrestricted.

Fig. 3 is the circuit diagram for showing to be applied to the voltage conditions of storage unit in read operation.In figure 3, it can be exemplified Flash memory is shown to property.However, present inventive concept is not limited to this.

With reference to Fig. 3, the multiple storage units being connected in series with may be constructed NAND string NS.String select transistor SST can connect It is connected to one end of each NAND string NS and ground selection transistor GST may be coupled to its other end.

In NAND string NS, the grid of ground selection transistor GST can be commonly connected to ground selection line GSL, and string selection is brilliant The grid of body pipe SST can be commonly connected to string selection line SSL, and storage unit MC can be connected respectively to wordline WL1 and arrive WL8.It can be commonly connected to wordline with the storage unit at ground selection transistor GST same positions.String in NAND string NS Selection transistor SST can be connected respectively to bit line BL1 to BL4.

It is assumed that during read operation, wordline WL5 is selected.Selection read voltage VRD can be applied to selected word line WL5.The Two non-selection read voltage VREAD2, which can be applied in unselected word line WL1 to WL4 and WL6 to WL8, is adjacent to selected word The wordline WL4 and WL6 of line WL5.First non-selection read voltage VREAD1 can be applied to unselected word line WL1 to WL4 and WL6 is arrived Remaining wordline WL1 to WL3, WL7 and the WL8 other than wordline WL4 and WL6 in WL8.

Selection read voltage VRD can be the threshold voltage for determining the storage unit MC being connect with selected word line WL5 Voltage.Select read voltage VRD can be with the voltage level in the threshold voltage of storage unit MC.Select read voltage VRD can To be less than the first non-selection non-selection read voltage VREAD2 of read voltage VREAD1 and second.

First non-selection read voltage VREAD1 can be used for being connected to be deposited with what unselected word line WL1 to WL3, WL7 and WL8 were connect The voltage of storage unit.First non-selection read voltage VREAD1 can be higher than the threshold voltage of storage unit MC.First non-selection reading Voltage VREAD1 can be above the high voltage of selection read voltage VRD.

Second non-selection read voltage VREAD2 can be used for be connected be adjacent to selected word line WL5 unselected word line WL4 and The voltage of the storage unit of WL6 connections.The selection read voltage VRD for being applied to selected word line WL5 can be less than the first non-selection reading Voltage VREAD1.When the first non-selection read voltage VREAD1 is applied to the wordline WL4 and WL6 for being adjacent to selected word line WL5, by The electric field that first non-selection read voltage VREAD1 is generated can be distributed in the direction of selected word line WL5.That is, when identical reading electricity When pressure is applied to unselected word line WL1 to WL4 and WL6 to WL8, in the unselected word line WL4 and WL6 for being adjacent to selected word line WL5 The electric field of middle formation can be weaker than the electric field formed in remaining unselected word line WL1 to WL3, WL7 and WL8.In order to avoid this Phenomenon, the second non-selection read voltage VREAD2 for being applied to the unselected word line WL4 and WL6 that are adjacent to selected word line WL5 can be by It is set above the first non-selection read voltage VREAD1.

When read operation is performed, the storage unit for being connected to unselected word line WL1 to WL4 and WL6 to WL8 can suffer from Interference caused by non-selection read voltage VREAD1 and VREAD2.Because of ceiling voltage（For example, VREAD2）It is applied to neighbouring In the unselected word line WL4 and WL6 of selected word line WL5, thus the storage unit of unselected word line WL4 and WL6 can suffer from it is most capable and experienced It disturbs.The interference generated in read operation can lead to the variation in terms of the threshold voltage of storage unit, so that being stored in non-easy The property lost memory 1300（Referring to Fig.1）In data be destroyed.

Fig. 4 is the interference for showing to generate when the read operation in the particular word line of nonvolatile memory 1300 is iterated Table.With reference to Fig. 4 the wordline WL4 and WL6 of wordline WL5 are adjacent to if read operation is iteratively performed k times relative to wordline WL5 It can be subjected to strong jamming k times.

Fig. 5 be show when relative to nonvolatile memory 1300 particular word line alternately and be iteratively performed reading behaviour As when the table of interference that generates.With reference to Fig. 5, if alternately and being iteratively performed 2k time relative to wordline WL3 and WL5 and reading to grasp Make, then adjacent wordline WL2 and WL6 can be through being disturbed k times, and the wordline WL4 between wordline WL5 and wordline WL6 can be with Through being disturbed 2k times.

As with reference to described in Fig. 3 to Fig. 5, when the read operation of nonvolatile memory 1300 is performed, it is adjacent to selected The wordline of wordline can be by strong jamming.Specifically, and adjacent when being iteratively performed read operation relative to particular word line The storage unit of wordline connection can be cumulatively by strong jamming.In this case, it is stored in cumulatively by strongly disturbing Data in storage unit are likely to be broken.

It, can be by can when the number of read operation is greater than or equal to random number in order to avoid phenomenon described above The storage unit being connect with unselected word line by property verification read operation reading, and can determine the data being stored in the storage unit Extent of the destruction.The rear operation that the data in the storage unit are stored in for protection can be executed according to determining result.

If randomly executing reliability demonstration read operation, the wordline for being adjacent to and being subjected to continually read operation can be increased Storage unit inspection frequency.Although in addition, from host 1100（Referring to Fig.1）The reading mode received has periodically, but It is periodicity of the interference without consideration reading mode that can totally check the storage unit in nonvolatile memory 1300.From And the reliability of storage control 1200 and storage system 1300 can be improved.

Fig. 6 is the flow chart of the operating method for the storage system for showing the embodiment according to present inventive concept.Referring to Fig.1 and Fig. 6 can receive read command and read address in operation sl 10.Storage control 1200 can receive from host 1100 and read life Enable and read address.

In operation s 120, according to read command and address execution read operation can be read.Storage control 1200 can be based on The read command and reading address received from host 1100 executes read operation to control nonvolatile memory 1300.Storage control 1200 can become the reading address conversion inputted from host 1100 the address for nonvolatile memory 1300.Storage control Device 1200 can generate the read command for nonvolatile memory 1300 based on the read command inputted from host 1100.Storage control Device 1200 processed can provide the read command of the reading address and generation of conversion to nonvolatile memory 1300.

Storage control 1200 can receive the data read from nonvolatile memory 1300 for being transferred to host 1100。

In operating S130, it can be executed according to the read command that is sent out by storage control 1200 and the reading address that receives Associated reliability demonstration read operation.When this read command sent out meets specified conditions, storage control 1200 can be with Execute reliability demonstration read operation.For example, when the value counted by counter 1230 is equaled or exceeded by randomizer 1220 When the random number of generation, storage control 1200 can control nonvolatile memory 1300 and execute reliability demonstration read operation.

When reliability demonstration read operation is performed, storage control 1200 can generate with when typical read operation is held The identical read command of read command when row.As another example, storage control 1200 can be generated reads for reliability demonstration The order of the separation of operation.Storage control 1200 can be based on the read command phase for verifying read operation with the reliable trigger sent out Associated reading address generates the address for reliability demonstration read operation.Storage control 1200 can be to non-volatile memories Device 1300 provides the address generated and order.

Storage control 1200 can receive the data read from nonvolatile memory 1300, and can be based on reception Data operate after executing.For example, can execute can be by after data that reading is hindered and damaged for protection for storage control 1200 Operation.

Although the embodiment of Fig. 6 describes the reliability demonstration read operation being triggered after receiving read command from host, But when not triggered by host 1100, storage control 1200 can also execute reliability demonstration read operation.Storage control 1200 can read data as a part for consistency operation with managing non-volatile memory from nonvolatile memory 1300 1300.The read command sent out by storage control 1200 during these read operations can verify read operation with reliable trigger.That is, In response to the read command sent out, count value can be incremented to the value for equaling or exceeding random number.At this point, being read by reliability demonstration The data that operation is read can not be output to host 1100.

Although, can be by storage control during reliability demonstration read operation in addition, at least one embodiment 1200 send out read command, but counter 1230 is not responsive to the read command that these send out and carrys out incrementing count values.

Fig. 7 is the flow chart for the condition for showing the reliability demonstration read operation for storage control 1200.Referring to Fig.1 and Fig. 7 can generate random number in operating S131.For example, randomizer 1220 can be based on being stored in reliability demonstration Reference value in read register 1210 generates random number.Randomizer 1220 can be in the control for reading control unit 1240 It is next to connect one and be sequentially generated random number.The average value for the random number being sequentially generated from randomizer 1220 can be with The reference value being stored in reliability demonstration read register 1210.

In operating S132, it can not execute and be further processed until read command is issued.If read command is issued, Method proceeds to operation S133.

In operating S133, read command can be counted.Counter 1230 can be sent out according to by storage control 1200 Read command increase count value.For example, when read command is sent out by storage control 1200, counter 1230 can be with Increase count value and reads address without considering.As another example, counter 1230 can manage and nonvolatile memory respectively The 1300 corresponding multiple count values of multiple regions.Counter 1230 can increase with by associated with the read command sent out Read the corresponding count value in region of the specified nonvolatile memory 1300 in address.

In operating S134, it may be determined that whether count value is greater than or equal to random number.Reading control unit 1240 can be from Randomizer 1220 receives random number and from 1230 count pick up value of counter.Reading control unit 1240, which can compare, to be connect Whether the random number received and the count value received are greater than or equal to random number with determines counting value.Reading control unit 1240 can Whether at least one of count value with determines counting device 1230 is greater than or equal to random number.In the exemplary embodiment, if Counter 1230 manages multiple count values, then randomizer 1220 can manage multiple random numbers.Random number can be distinguished Corresponding to count value.Random number can have equal or approximate with the reference value being stored in reliability demonstration read register 1210 Average value.

If count value is not equal to or is no more than random number, reliability demonstration read operation, and method can not be executed Proceed to operation S132.

If count value equals or exceeds random number, in operating S135, storage control 1200 executes reliability and tests Demonstrate,prove read operation.In operating S136,1200 reset count value of storage control.Then, the method proceed to operation S131 with Random number is generated again.If counter 1230 manages multiple count values, in operating S136, the reading with the read command sent out The associated count value in address, that is, cause the count value of reliability demonstration read operation that can be reset.It, can in operating S131 To generate random number associated with the count value of reset again.Then, method proceeds to operation S133.

When storage control 1200 and nonvolatile memory 1300 are powered, operations described above S131 is arrived S136 can be continuously performed.When storage control 1200 and nonvolatile memory 1300 are powered down, operations described above S131 to S136 can stop.

Even if storage control 1200 and nonvolatile memory 1300 are powered down, generated from randomizer 1220 Random number can also be kept.For example, random number can be stored in it is in the nonvolatile memory in storage control 1200 or standby Part arrives nonvolatile memory 1300.Even if storage control 1200 or nonvolatile memory 1300 are powered down, by counter The count value of 1230 management can also be kept.For example, the count value managed by counter 1230 can be stored in storage control In nonvolatile memory in 1200 or backup to nonvolatile memory 1300.

Fig. 8 A are the flow charts for showing to read method according to the reliability demonstration of the embodiment of present inventive concept.Referring to Fig.1 and Fig. 8 A can read the top wordline for being adjacent to selected word line in operating S211 based on address is read.When the input according to read command Count value when equaling or exceeding random number, storage control 1200 can control nonvolatile memory 1300 and read and be adjacent to The storage unit of the top wordline connection of selected word line, wherein the selected word line is to be based on reading associated with read command address Selection.For example, when reading address and specifying kth wordline, storage control 1200 can be generated corresponding to the（k+1）The ground of wordline It is read for reliability demonstration location.The address of generation and read command can be transmitted to non-volatile memories by storage control 1200 Device 1300 is to execute reliability demonstration read operation.

In operating S213, the lower section wordline for being adjacent to selected word line can be read based on address is read.When according to read command When the count value of input equals or exceeds random number, storage control 1200 can control nonvolatile memory 1300 and read and neighbour It is bordering on the storage unit of the lower section wordline connection of selected word line, wherein the selected word line is to be based on reading associated with read command Address choice.For example, when reading address and specifying kth wordline, storage control 1200 can be generated corresponding to the（k-1）Wordline Address for reliability demonstration read.The address of generation and read command can be transmitted to non-volatile by storage control 1200 Memory 1300 is to execute reliability demonstration read operation.

In the exemplary embodiment, if selected word line is located at edge, that is, if top wordline or lower section wordline are not present, One in operations described above S211 and S213 can then be skipped.

Fig. 8 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A.In the fig. 8b, Number in frame can indicate word line numbers.Referring to Fig.1 with Fig. 8 B, host 1100 can sequentially pass to storage control 1200 Send the read command of wordline 1 and 8.When being received read command, storage control 1200 can increase count value.

The read command of wordline 1 and 8 can be transmitted to nonvolatile memory 1300 by storage control 1200.Storage control Device 1200 can will be from the data transmission that nonvolatile memory 1300 is read to host 1100.

In first time T1, host 1100 can send the read command of wordline 2, storage control to storage control 1200 Then 1200 send out read command to nonvolatile memory 1300.At this point, read command count value can equal or exceed random number.

Storage control 1200 can will be from the data transmission that nonvolatile memory 1300 is read to host 1100.Then, The read command of the lower section wordline 1 for being adjacent to selected word line 2 and top wordline 3 can be transmitted to non-volatile by storage control 1200 Property memory 1300.Storage control 1200 can be by the data for the wordline 1 and 3 read from nonvolatile memory 1300 for managing Manage the rear operation of nonvolatile memory 1300.At this point, the data for the wordline 1 and 3 read from nonvolatile memory 1300 can be with It is not transferred to host 1100.

Host 1100 can send the read command of wordline 7 and 4 to storage control 1200.Storage control 1200 can be to Nonvolatile memory 1300 transmits the read command of wordline 7 and 4, and can provide the number read from wordline 7 and 4 to host 1100 According to.

In the second time T2, host 1100 can send the read command of wordline 3 to storage control 1200, cause to store Controller 1200 sends out corresponding read command to nonvolatile memory 1300.At this point, read command count value can become larger than Or it is equal to random number.

Storage control 1200 can will be from the data transmission that nonvolatile memory 1300 is read to host 1100.Then, The read command of the lower section wordline 2 and top wordline 4 that are adjacent to selected word line 3 can be sequentially transferred to by storage control 1200 Nonvolatile memory 1300.Storage control 1200 can be by the data for the wordline 2 and 4 read from nonvolatile memory 1300 Rear operation for managing non-volatile memory 1300.At this point, the number for the wordline 2 and 4 read from nonvolatile memory 1300 According to host 1100 can be not transferred to.Storage control 1200 can be with reset count value to generate new random number.

Host 1100 can send the read command of wordline 1 to storage control 1200.Storage control 1200 can be to non- Volatile memory 1300 transmits the read command of wordline 1, and can provide the data read from wordline 1 to host 1100.

In the exemplary embodiment, the voltage conditions for reliability demonstration read operation can be different from the voltage item of read operation Part.For example, for reliability demonstration read operation read voltage number and level can be different from the read voltage for read operation Number and level.

In the exemplary embodiment, storage control 1200 be transmitted to nonvolatile memory 1300 be used for reliability demonstration The order of read operation can be equal to the order for read operation.Storage control 1200 can change nonvolatile memory 1300 Voltage conditions to execute reliability demonstration read operation.For example, execute wordline 2 on read operation after, storage control 1200 can provide setting command to nonvolatile memory 1300（It is not shown）Being changed as voltage conditions for reliable Property verification read operation voltage conditions.After changing voltage conditions according to setting command, storage control 1200 can be to non- Volatile memory 1300 transmits the read command of wordline 1 and 3.That is, storage control 1200 can be by non-volatile memories Device 1300 sends the read command of setting command and wordline 1 and 3 to execute reliability demonstration read operation.

After reliability demonstration read operation completion, storage control 1200 can be provided to nonvolatile memory 1300 Second setting command（It is not shown）Voltage conditions to be changed as to be used for read operation（For example, standard read operation）Voltage item Part.Storage control 1200 can be in response to causing the read command of the wordline 2 of reliability demonstration read operation to be tested to execute reliability Read operation is demonstrate,proved, then can provide the second setting command to nonvolatile memory 1300.In other example embodiments, response In the read command for the wordline 7 for following the read command after leading to the wordline 2 of reliability demonstration read operation, storage control 1200 The second setting command can be sent in the forward direction nonvolatile memory 1300 of the read operation according to the read command of wordline 7.

In yet another exemplary embodiment, storage control 1200 may include being used for read operation and reliability demonstration read operation Separation order.

Fig. 8 C are another embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure.Compared with Fig. 8 B, if equaling or exceeding random number in first time T1 count value, storage control 1200 can control Nonvolatile memory 1300 executes reliability demonstration read operation in the wordline 1 and 3 for be adjacent to selected word line 2, then in quilt Read operation is executed on word selection line 2.Similarly, it if equaling or exceeding new random number in the second time T2 count value, stores Controller 1200, which can control nonvolatile memory 1300 and execute reliability in the wordline 2 and 4 for be adjacent to selected word line 3, to be tested Read operation is demonstrate,proved, then executes read operation in selected word line 3.

In Fig. 8 B and Fig. 8 C, example is shown, wherein in reliability demonstration read operation, be adjacent to selected word line（Example Such as, kth wordline）Lower section wordline（For example, the（k-1）Wordline）Storage unit read, be then adjacent to the upper of selected word line Square cards for learning characters line（For example, the（k+1）Wordline）Storage unit read.However, present inventive concept is not limited to this.For example, reliable Property verification read operation in, the storage unit for being adjacent to the top wordline of selected word line can be read, and selected word line is then adjacent to The storage unit of lower section wordline can be read.

After reliability demonstration read operation completion, storage control 1200 can be provided to nonvolatile memory 1300 Second setting command（It is not shown）Voltage conditions to be changed as to be used for read operation（For example, standard read operation）Voltage item Part.After changing voltage conditions according to the second setting command, storage control 1200 can be to nonvolatile memory 1300 Transmit the read command of wordline 2.

In other example embodiments, storage control 1200 may include being used for read operation and reliability demonstration read operation Separation order.

Fig. 8 D are a further embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure.Compared with Fig. 8 B, if equaling or exceeding random number in first time T1 count value, storage control 1200 can control Nonvolatile memory 1300 executed sequentially in the lower section wordline 1 for be adjacent to selected word line 2 reliability demonstration read operation, Read operation is executed in selected word line 2 and reliability demonstration read operation is executed in the top wordline 3 for be adjacent to selected word line 2. Similarly, if equaling or exceeding random number in the second time T2 count value, storage control 1200 can control non-volatile Property memory 1300 executes reliability demonstration read operation, in selected word sequentially in the lower section wordline 2 for be adjacent to selected word line 3 Read operation is executed on line 3 and reliability demonstration read operation is executed in the top wordline 4 for be adjacent to selected word line 3.

Storage control 1200 can transmit the setting command for changing voltage conditions to nonvolatile memory 1300, Then the read command of wordline 1 can be provided to nonvolatile storage 1300.It is read in the reliability demonstration of the read command according to wordline 1 After operation is performed, storage control 1200 can transmit the second setting command to nonvolatile memory 1300.In basis After second setting command changes voltage conditions, storage control 1200 can send wordline 2 to nonvolatile memory 1300 Read command.After read operation corresponding with the read command of wordline 2, storage control 1200 can be to non-volatile memories Device 1300 provides setting command.After changing voltage conditions according to setting command, storage control 1200 can be to non-volatile Property memory 1300 transmit wordline 3 read command.

After reliability demonstration read operation corresponding with the read command of wordline 3 completion, storage control 1200 can be with The second setting command is provided to nonvolatile memory 1300.Storage control 1200 can be in the read command in response to wordline 2 Reliability demonstration read operation complete after transmit the second setting command.In other example embodiments, in response to the reading of wordline 7 Order, storage control 1200 can be sent out in the forward direction nonvolatile memory 1300 of the read operation according to the read command of wordline 7 Send the second setting command.

Fig. 8 E are a further embodiments for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 8 A Figure.Compared with Fig. 8 B, if equaling or exceeding random number in first time T1 count value, storage control 1200 can control Nonvolatile memory 1300 executed sequentially in the top wordline 3 for be adjacent to selected word line 2 reliability demonstration read operation, Read operation is executed in selected word line 2 and reliability demonstration read operation is executed in the lower section wordline 1 for be adjacent to selected word line 2. Similarly, if equaling or exceeding random number in the second time T2 count value, storage control 1200 can control non-volatile Property memory 1300 executes reliability demonstration read operation, in selected word sequentially in the top wordline 4 for be adjacent to selected word line 3 Read operation is executed on line 3 and reliability demonstration read operation is executed in the lower section wordline 2 for be adjacent to selected word line 3.

Before reliability demonstration read operation, storage control 1200 can be transmitted to nonvolatile storage 1300 for changing First setting command of time variant voltage condition.Reliability demonstration read operation completion after, storage control 1200 can to it is non-easily Lose second setting command of the transmission of memory 1300 for restoring voltage conditions.It can be according to leading to reliability demonstration read operation Read command transmits the first setting command.It can be according to the read command for leading to reliability demonstration read operation or according to subsequent read command Transmit the second setting command.

The transmission of storage control 1200 includes for reading for changing the order of voltage conditions or storage control 1200 The mode of the order of the separation of operation and reliability demonstration read operation can be applied to the embodiment by description later.In addition, right The modifications and changes of these embodiments can not depart from the spirit of present inventive concept.

Although in addition, the embodiment of the embodiment of Fig. 8 A to Fig. 8 E described above and Fig. 9 A to Figure 10 B discussed below It is assumed that the read command for verifying read operation by the reliable trigger that storage control 1200 is sent out corresponds to the reading from host 1100 Order, it will be understood that the read command of the reliable trigger verification read operation sent out from storage control 1200 can not be by The read command received from host 1100 causes（For example, can be sent out during consistency operation）.

Fig. 9 A are the flow charts for showing to read method according to the reliability demonstration of another embodiment of present inventive concept.With reference to figure 1 and Fig. 9 A can read one be adjacent in the wordline of selected word line in operating S221 based on address is read.When according to by depositing When the count value for the read command that storage controller 1200 is sent out equals or exceeds random number, storage control 1200 can control non-easy The reading of the property lost memory 1300 and a storage unit connecting in the wordline for being adjacent to selected word line, the selected word line is base In reading address choice associated with the reliable trigger verification read command of read operation.For example, specifying kth wordline when reading address When, storage control 1200 can be generated corresponding to（k-1）Wordline or（k+1）The address of wordline.Storage control 1200 The address of generation and read command can be transmitted to nonvolatile memory 1300 to execute reliability demonstration read operation.

In operating S223, another in the wordline of selected word line can be adjacent to based on the reading of reading address.When according to reading When the count value of order equals or exceeds random number, storage control 1200 can control nonvolatile memory 1300 and read and neighbour It is bordering on the storage unit of another connection in the wordline of selected word line, the selected word line is to be based on verifying with reliable trigger The associated reading address choice of read command of read operation.For example, when input address specifies kth wordline, storage control 1200 can generate corresponding to（k+1）Wordline or（k-1）The address of wordline.Storage control 1200 can be by the ground of generation Location and read command are transmitted to nonvolatile memory 1300 to execute reliability demonstration read operation.

In the exemplary embodiment, reliability demonstration can be executed in other wordline read behaviour in response to subsequent read command Make.If the first read command is issued and count value equals or exceeds random number, can be adjacent to by reading to order with first Enable one in the wordline of the associated first wordline for reading address choice upper execution reliability demonstration read operation.It is following in institute It states after the second read command after the first read command is issued, it can be in the word for being adjacent to the wordline for reading address choice by first Reliability demonstration read operation is executed on another in line.

In example embodiment, if selected word line is located at edge, that is, if top wordline or lower section wordline are not present, One in operations described above S221 and S223 can be skipped.

Fig. 9 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Fig. 9 A.With Fig. 8 B phases Than if equaling or exceeding random number in first time T1 count value, storage control 1200 can control non-volatile deposit Reservoir 1300 executes read operation and one in the wordline 1 and 3 for being adjacent to selected word line 2 sequentially in selected word line 2 Upper execution reliability demonstration read operation.If the read command of wordline 7 is sent out in the second time T2, storage control 1200 can be with Control nonvolatile memory 1300 executes read operation sequentially in selected word line 7 and is being adjacent to according to previous reading life It enables and executes reliability demonstration read operation on another in the wordline 1 and 3 of the wordline 2 of selection.

Similarly, if equaled or exceeded in third time T3 count values（For example, reach）Random number then stores control Device 1200 processed can control nonvolatile memory 1300 and execute reliability demonstration read operation sequentially in selected word line 3, with An and upper execution reliability demonstration read operation in the wordline 2 and 4 for being adjacent to selected word line 3.If the read command of wordline 1 It is sent out in the 4th time T4, then storage control 1200 can control nonvolatile memory 1300 sequentially in selected word line 1 On read operation, and be adjacent to according on another in the wordline 2 and 4 of the selected word line 3 of previous read command selection Execute reliability demonstration read operation.

In example shown in Fig. 9 B, is read after selected kth wordline（k-1）Wordline, then next selected word line it After read（k+1）Wordline.However, alternatively, can be read after selected kth wordline（k+1）Wordline, then can be under The is read after one selected word line（k-1）Wordline.

In the storage system including storage control 1200 and nonvolatile storage 1300, if reliability demonstration read Operation is distributed as executing in response to multiple read commands, then can shorten the response time of the read request to host 1100.

In the exemplary embodiment, as with reference to described in Fig. 8 B and Fig. 8 C, thus it is possible to vary behaviour is read in read operation and reliability demonstration The order of work.

In the exemplary embodiment, as with reference to described in Fig. 8 D and Fig. 8 E, thus it is possible to vary the first reliability demonstration read operation The position of the wordline of the position of wordline and the second reliability demonstration read operation.

Figure 10 A are the flow charts for showing to read method according to the reliability demonstration of a further embodiment of present inventive concept.Reference Fig. 1 and Figure 10 A can read one be adjacent in the wordline of selected word line in operating S231 based on address is read.When according to by When the count value for the read command that storage control 1200 is sent out equals or exceeds random number, storage control 1200 can control non- Volatile memory 1300 is read Based on reading address choice associated with the read command sent out by storage control 1200.For example, when the address sent out refers to When determining kth wordline, storage control 1200 can be generated corresponding to（k-1）Wordline or（k+1）The address of wordline.Storage control The address of generation and read command can be transmitted to nonvolatile memory 1300 and read behaviour to execute reliability demonstration by device 1200 processed Make.

In the exemplary embodiment, reliability demonstration reading can be randomly selected for from the wordline for be adjacent to selected word line The wordline of operation.In storage control 1200, randomizer 1220 can further be generated for selecting dummy word line Random number, and for reliability demonstration read operation wordline can the random number based on generation selected from neighbouring wordline.

In the exemplary embodiment, the wordline for being adjacent to selected word line can be selected successively, read to grasp for reliability demonstration Make.Storage control 1200 can be in the first reliability demonstration read operation above（Or, lower section）Reliability is executed in wordline Read operation is verified, and can be in the second reliability demonstration read operation in lower section（Or, top）Reliability is executed in wordline to test Demonstrate,prove read operation.

Figure 10 B are the figures for showing to read the reliability demonstration read operation of method according to the reliability demonstration of Figure 10 A.With Fig. 8 B phases Than if being greater than or equal to random number in first time T1 count value, storage control 1200 can control non-volatile deposit Reservoir 1300 executes a upper execution of the read operation then in the wordline 1 and 3 for being adjacent to selected word line 2 in selected word line 2 Reliability demonstration read operation.Can randomly or alternately be selected in adjacent wordline 1 and 3, which will execute reliability demonstration, reads The wordline of operation.

If being greater than or equal to random number in the second time T2 count value, storage control 1200 can control non-volatile Memory 1300 executes read operation in selected word line 3 and then holds on one in the wordline 2 and 4 for being adjacent to selected word line 3 Row reliability demonstration read operation.It can randomly or alternately select that reliability demonstration will be executed in adjacent wordline 2 and 4 The wordline of read operation.

As described in referring to FIGS. 10A and 10B reliability is executed when one in the wordline for being adjacent to selected word line is upper Verify the average value that frequency is read in reliability demonstration when read operation（First average value）It can be less than as with reference to Fig. 8 A to 9B descriptions When in the wordline for be adjacent to selected word line execute reliability when reliability demonstration read frequency average value（Second is average Value）.For example, the first average value can be the half of the second average value.

Figure 11 A show the example for the selection read voltage being applied in reliability demonstration read operation.In Figure 11 A, trunnion axis It can indicate threshold voltage, and vertical axis can indicate the number of storage unit.In Figure 11 A, show and three wordline WL_ The threshold voltage for the storage unit that k-1, WL_k are connected with WL_k+1 is distributed.

Each in storage unit can be with one in erase status E and programming state P1 to P7.That is, each depositing Storage unit can store 3 bit datas.However, present inventive concept is not limited to this.

Wordline WL_k can be by the wordline of read command and reading address choice.Wordline WL_k-1 and WL_k+1 can be neighbouring In the wordline of selected word line.Multiple voltage VR1 to VR2 can be applied to wordline WL_k-1 and WL_k+1 alternatively read voltage. Multiple voltage VR1 to VR2 can be the voltage for typical read operation.

For example, in standard read operation, the voltage for reading LSB, the voltage for reading CSB can be used and be used for Read the voltage of MSB.It includes with erase status E and close erasing shape that reliability demonstration read operation, which can use in read voltage, The read voltage of level between the programming state P1 of state E.

It is, for example, possible to use the voltage VR1 close to erase status E executes reliability demonstration read operation.Alternatively, it is possible to Using including executing reliability demonstration read operation close to the read voltage VR1 and VR2 of the voltage VR1 of erase status E.For example, can May include reading most significant bit by property verification read operation（MSB）Operation.In the exemplary embodiment, it in Figure 11 A, shows to make With the example of the voltage for reading MSB.However, present inventive concept is not limited to this.

Erase status E can be with the range of the lowest threshold in the state that storage unit has.To with wiping Interference is read except that can be generated in the storage unit of state E.If voltage VR1 between erase status E and programming state P1 by with Elect read voltage, then can detect the reading interference generated in the storage unit with erase status E, and can detect The most strong jamming generated in adjacent wordline WL_k-1 and WL_k+1.

Figure 11 B show another example for the selection read voltage being applied in reliability demonstration read operation.Compared with Figure 11 A, The storage unit of adjacent wordline WL_k+1 can store LSB and CSB.MSB can be not stored in adjacent wordline WL_k+1's In storage unit.The storage unit of adjacent wordline WL_k-1 can store LSB, CSB and MSB.The storage of selected word line WL_k Unit can store LSB, CSB and MSB.

It can be such as the storage unit of the adjacent wordline WL_k-1 of reading described in 1A referring to Fig.1.When in adjacent wordline WL_k+ When executing reliability demonstration read operation on 1, multiple voltage VCR1 and VRC2 can be used.Voltage VCR1 and VRC2 can marked The voltage used in quasi- read operation.For example, in standard read operation, the voltage for reading LSB and the electricity for reading CSB are used Pressure.It includes having erase status E and between the programming state CP1 close to erase status E that can use in voltage The read voltage of the voltage of level executes reliability demonstration read operation.It is, for example, possible to use close to the voltage VR1 of erase status E Execute reliability demonstration read operation.It is alternatively possible to use including the read voltage VCR1 close to the voltage VCR1 of erase status E Reliability demonstration read operation is executed with VCR2.For example, reliability demonstration read operation may include reading the operation of CSB.In example In embodiment, in Figure 11 B, the example using the voltage for reading CSB is shown.However, present inventive concept is not limited to this.

Figure 11 C show an also example for the selection read voltage being applied in reliability demonstration read operation.Compared with Figure 11 A, The storage unit of adjacent wordline WL_k+1 can store LSB.CSB and MSB can be not stored in adjacent wordline WL_k+1's In storage unit.The storage unit of adjacent wordline WL_k-1 can store LSB, CSB and MSB.The storage of selected word line WL_k Unit can store LSB and CSB.

It can be such as the storage unit of the adjacent wordline WL_k-1 of reading described in 1A referring to Fig.1.When in adjacent wordline WL_k+ When executing reliability demonstration read operation on 1, voltage VLR can be used.Voltage VLR can be the electricity used in standard read operation Pressure.For example, voltage VLR can be the voltage for reading LSB.The voltage VLR close to erase status E can be used to execute reliability Verify read operation.Alternatively, reliability demonstration read operation may include reading the operation of LSB.

Figure 11 D show an also example for the selection read voltage being applied in reliability demonstration read operation.Compared with Figure 11 B, The storage unit of adjacent wordline WL_k+1 can have erase status E.That is, data can be not stored in adjacent wordline WL_k In+1 storage unit.The storage unit of adjacent wordline WL_k-1 can store LSB and CSB.The storage of selected word line WL_k Unit can store LSB.

It can be such as the storage unit of the adjacent wordline WL_k-1 of reading described in the adjacent wordline WL_k+1 of 1B referring to Fig.1. When executing reliability demonstration read operation on adjacent wordline WL_k+1, read voltage VDR can be verified with use reliability.Reliably Property verification read voltage VDR can be that there is erase status E and the electricity close to the level between the programming state P1 of erase status E Pressure.Reliability demonstration read voltage VDR can be the voltage used in standard read operation.For example, reliability demonstration read voltage VDR Can be for reading the voltage of LSB, the voltage for reading CSB and for reading having close to erasing shape in the voltage of MSB The voltage of the level of state E.Reliability demonstration read voltage VDR can be the electricity with the voltage for being different from using in standard read operation Flat voltage, and with for the desired of reliability demonstration read operation（Or, alternatively, it is scheduled）Level.

Figure 11 E show an also example for the selection read voltage being applied in reliability demonstration read operation.Compared with Figure 11 A, The storage unit of adjacent wordline WL_k+1 can have erase status E.That is, data can be not stored in adjacent wordline WL_k In+1 storage unit.The storage unit of adjacent wordline WL_k-1 can store LSB, CSB and MSB.Selected word line WL_k's Storage unit can store LSB, CSB and MSB.

It can be such as the storage unit of the adjacent wordline WL_k-1 of reading described in 1A referring to Fig.1.It can be such as the phase of 1D referring to Fig.1 The storage unit of the adjacent wordline WL_k+1 of reading of adjacent wordline WL_k+1 descriptions.

Figure 11 F show an also example for the selection read voltage being applied in reliability demonstration read operation.Compared with Figure 11 A, The storage unit of adjacent wordline WL_k+1 can store LSB, CSB and MSB.The storage unit of adjacent wordline WL_k-1 can be with Store LSB, CSB and MSB.The storage unit of selected word line WL_k can store LSB, CSB and MSB.

It can be such as the storage unit of the adjacent wordline WL_k-1 of reading described in 1A referring to Fig.1.When reliability demonstration read operation It is performed, if by coarse programming（coarse programming）Then on the adjacent wordline WL_k+1 by coarse programming Read operation can be skipped.

Coarse programming can be the programming of on piece buffering（on-chip buffered programming）Programmed sequence. The programming of on piece buffering can be the storage unit execution 1 step programming relative to wordline（1-step programming）, it is coarse Programming and fine program（fine programming）Programming.In the programming of 1 step, each storage that can be in selected word line At least two bits in LSB, CSB and MSB are programmed in unit.In coarse programming, it can be deposited in each of selected word line LSB, CSB and MSB are programmed in storage unit.Fine program can be performed to be subtly programmed wherein to LSB, CSB and MSB The storage unit of coarse programming be programmed.The storage to being already subjected to both the programming of 1 step and coarse programming can not be executed The reading of unit.The reading to being already subjected to all storage units of the programming of 1 step, coarse programming and fine program can be executed.

Figure 12 is to show that storage control 1200 manages the figure of the method for random number and count value.Referring to Fig.1 2, storage control Device 1200 processed can execute one in comprehensive management, the management of block group and block management.

Comprehensive management can be based on the global storage space management random number R DN of nonvolatile storage 1300 and reading Number.Randomizer 1220 can generate random number R DN.Counter 1230 can be to count.Work as storage control 1200, which send out count value when read command or nonvolatile storage 1300 execute read operation, to increase.Count value can be with random number Compare.

The management of block group can manage the memory block of nonvolatile storage 1300 according to block group.Each block group may include multiple Memory block.Randomizer 1220 can generate random number R DN1 to the RDNn for being respectively corresponding to block group.Counter 1230 can With respectively to multiple counts corresponding to block group.Storage control 1200 can manage random number and counting according to block group Value.When storage control 1200 sends out read command or nonvolatile storage 1300 executes read operation, with the block group phase for reading target Corresponding count value can increase.Increased count value can be the same as compared with the corresponding random number of block group for reading target.

Block management can manage multiple memory blocks of nonvolatile storage 1300.Randomizer 1220 can give birth to respectively At random number R DN1 to the RDNn corresponding to memory block.Counter 1230 can be respectively to multiple count values corresponding to memory block It counts.Storage control 1200 can manage random number and count value according to block.When storage control 1200 send out read command or When nonvolatile storage 1300 executes read operation, count value corresponding with the memory block of target is read can increase.Increased meter Numerical value can be the same as compared with the corresponding random number of memory block for reading target.

Figure 13 A show that the example scenarios of interference can be generated in the wordline of the opening of nonvolatile memory.In Figure 13 A In, trunnion axis can indicate threshold voltage, and vertical axis can indicate the number of storage unit.That is, in Figure 13 A, show and word The threshold voltage of the storage unit of line WL1 to WL8 connections is distributed.

3A referring to Fig.1, LSB, CSB and MSB can be stored in the storage unit being connect with wordline WL1 to WL5.Data can To be not stored in the storage unit being connect with wordline WL6 to WL8.The wordline WL6 being connect with the storage unit for not storing data It can be open wordline to WL8.That is, the storage unit for the wordline opened has erase status.

Read operation can be executed on selected word line WL3.Although generating interference on wordline WL1, WL2, WL4 and WL5, Being can be in the wordline WL6 and WL7 being connect with each storage unit with erase status E（That is, the wordline opened）Middle generation Most strong jamming.The interference generated in wordline WL6 and WL7 can be than in the wordline WL2 and WL4 for being adjacent to selected word line WL3 The interference of generation is stronger.

Figure 13 B show that another example scenarios of interference can be generated in the wordline of the opening of volatile memory.Scheming In 13B, trunnion axis can indicate threshold voltage, and vertical axis can indicate the number of storage unit.That is, in Figure 13 B, show It is distributed with the threshold voltage of wordline WL1 to the WL8 storage units connecting.

3B referring to Fig.1, LSB, CSB and MSB can be stored in the storage unit being connect with wordline WL1 to WL3.LSB It can be stored in the storage unit being connect with wordline WL4 with CSB.LSB can be stored in the storage unit being connect with wordline WL5 In.Wordline can be open by being not stored in wordline WL6 to the WL8 that storage unit therein is connect with data.

The read operation on selected word line WL3 can be executed.Although generating interference in wordline WL1, WL2, WL4 and WL5, But most strong jamming can be generated in wordline WL6 to the WL8 being connect with each storage unit with erase status E.In word The interference generated in line WL6 to WL8 can be than the interference that is generated in the wordline WL2 and WL4 for being adjacent to selected word line WL3 more By force.

Figure 13 C show that another example scenarios of interference can be generated in the wordline of the opening of nonvolatile memory. In Figure 13 C, trunnion axis can indicate threshold voltage, and vertical axis can indicate the number of storage unit.That is, in Figure 13 C, show Go out and has been distributed with the threshold voltage of wordline WL1 to the WL8 storage units connecting.

3C referring to Fig.1, LSB, CSB and MSB can be stored in the storage unit being connect with wordline WL1 to WL3.With word The storage unit of line WL4 connections can be by coarse programming.The storage unit being connect with wordline WL5 can be programmed by 1 step.With data Wordline WL6 to the WL8 for being not stored in storage unit connection therein can be open wordline.

It, can be open when including open wordline by the memory block read as described in 3A to 13C referring to Fig.1 Most strong jamming is generated in wordline.In order to avoid this problem, implementation according to the present invention can be executed relative to open wordline The reliability demonstration read operation of example.

Figure 14 A are the flow charts that method is read according to the reliability demonstration of present inventive concept a further embodiment.Referring to Fig.1 and scheme 14A can be read at least in operating S311 based on reading address associated with the read command sent out by storage control 1200 The wordline of one opening.When the count value received from counter 1230 reaches（For example, equaling or exceeding）Occur from random number When the random number that device 1220 receives, storage control 1200 can be in the wordline of opening corresponding with the memory block of address is read Upper execution reliability demonstration read operation.

Figure 14 B show to read the example of the reliability demonstration read operation of method according to the reliability demonstration of Figure 14 A.Referring to Fig.1 It can be open wordline with storage wordline WL6 to the WL8 in the block of Figure 14 B, including selected word line WL3.It can be desired （Or, alternatively, it is scheduled）Position executes the reliability demonstration read operation relative to open wordline.

Situation is read for example, referring to the first reliability demonstration, can be programmed relative to being adjacent in open wordline Wordline WL1 to WL5 a WL6 execute reliability demonstration read operation.

Situation is read with reference to the second reliability demonstration, it can be relative to the centrally located wordline WL7 in open wordline To execute reliability demonstration read operation.

With reference to third reliability demonstration read situation, can relative to it is in open wordline, apart from programmed wordline Farthest WL1 to WL5 wordline WL8 executes reliability demonstration read operation.

In the exemplary embodiment, it can be executed according to the programmed sequence described with reference to Fig. 8 B to 8E, Fig. 9 B or Figure 10 B Reliability demonstration in the wordline of opening is read.

In the exemplary embodiment, the reliability on the adjacent wordline WL_k+1 of 1D or Figure 11 E referring to Fig.1 can be used to test Voltage is read to execute the reliability demonstration in open wordline described in card read operation.

Figure 15 is to show that storage control 1200 manages the figure of the another method of random number and count value.Referring to Fig.1 5, it deposits Storage controller 1200 can execute one in comprehensive management, the management of block group and block management.

The first reliability that comprehensive management can manage the global storage space relative to nonvolatile memory 1300 is tested Demonstrate,prove meter reading and the second reliability demonstration meter reading.First reliability demonstration meter reading can be reliable for being executed in adjacent wordline Property verification read operation table.Second reliability demonstration meter reading can read behaviour for executing reliability demonstration in open wordline The table of work.

Storage control 1200 can also manage random number R DN_C using the first reliability demonstration meter reading and read to count. Randomizer 1220 can generate the random number corresponding to the first reliability demonstration meter reading.Counter 1230 can be to corresponding In the count of the first reliability demonstration meter reading.Count value can be compared with random number R DN_C.

Storage control 1200 can manage random number R DN_O using the second reliability demonstration meter reading and read to count.With Machine number generator 1220 can generate the random number R DN_O corresponding to the second reliability demonstration meter reading.Counter 1230 can be right Corresponding to the count of the second reliability demonstration meter reading.Count value can be compared with random number R DN_O.

The first reliability demonstration meter reading and the second reliability demonstration meter reading can independently be managed.For example, when non-volatile Property memory 1300 memory block in not include open wordline memory block in execute read operation when, the first reliability is tested The count value of card meter reading is increased, and the count value of the second reliability demonstration meter reading is not added.When including open wordline Memory block in execute read operation when, the counting of the count value of the first reliability demonstration meter reading and the second reliability demonstration meter reading Value is all increased.

When executing reliability demonstration read operation in adjacent wordline based on the first reliability demonstration meter reading, can not change Become the information of the second reliability demonstration meter reading.Although for example, the random number of the first reliability demonstration meter reading generated again and Count value is reset, but can keep the random number and count value of the second reliability demonstration meter reading.Similarly, when based on second It is reliable can not to change first when executing reliability demonstration read operation in the wordline of at least one opening for reliability demonstration meter reading Property verification meter reading information.For example, although the random number of the second reliability demonstration meter reading is generated again and count value is answered Position, but the random number and count value of the first reliability demonstration meter reading can be kept.

The management of block group can carry out the memory block of managing non-volatile memory 1300 according to block group.Each block group may include Multiple memory blocks.The management of block group can be read relative to block group to manage the first reliability demonstration meter reading and the second reliability demonstration Table.

Storage control 1200 can using the first reliability demonstration meter reading come manage respectively corresponding to block group it is multiple with Machine number RDN_C1 to RDN_Cn and reading count.Randomizer 1220 can generate respectively to be read corresponding to the first reliability demonstration Random number R DN_C1 to the RDN_Cn of the block group of table.Counter 1230 can be respectively to corresponding to the first reliability demonstration meter reading Multiple counts of block group.When the read operation for executing nonvolatile memory 1300, can increase corresponding to reading target The count value of block group.Count value can be compared with corresponding to the random number for the block group for reading target.

Storage control 1200 can also respectively be managed using the second reliability demonstration meter reading corresponding to the multiple of block group Random number R DN_O1 to RDN_On and reading count.Randomizer 1220 can be generated respectively corresponding to the second reliability demonstration Random number R DN_O1 to the RDN_On of the block group of meter reading.Counter 1230 can be respectively to corresponding to the second reliability demonstration meter reading Block group multiple counts.When executing the read operation of nonvolatile memory 1300, can increase corresponding to reading mesh The count value of target block group.Count value can be compared with corresponding to the random number for the block group for reading target.

The first reliability demonstration meter reading and the second reliability demonstration meter reading can independently be managed.

Block management can be with multiple memory blocks of managing non-volatile memory 1300.Storage control 1200 can be relative to The memory block of nonvolatile memory 1300 manages the first reliability demonstration meter reading and the second reliability demonstration meter reading.

Storage control 1200 can respectively be managed using the first reliability demonstration meter reading corresponding to the multiple of memory block Random number R DN_C1 to RDN_Cn and reading count.Randomizer 1220 can be generated respectively corresponding to the first reliability demonstration Random number R DN_C1 to the RDN_Cn of the memory block of meter reading.Counter 1230 can be read corresponding to the first reliability demonstration respectively Multiple counts of the memory block of table.When executing the read operation of nonvolatile memory 1300, it can increase and correspond to Read the count value of the memory block of target.Count value can be compared with corresponding to the random number for the memory block for reading target.

Storage control 1200 can respectively be managed using the second reliability demonstration meter reading corresponding to the multiple of memory block Random number R DN_O1 to RDN_On and reading count.Randomizer 1220 can be generated respectively corresponding to the second reliability demonstration Random number R DN_O1 to the RDN_On of the memory block of meter reading.Counter 1230 can be read corresponding to the second reliability demonstration respectively Multiple counts of the memory block of table.When executing the read operation of nonvolatile memory 1300, it can increase and correspond to Read the count value of the memory block of target.Count value can be compared with corresponding to the random number for the memory block for reading target.

In fig.15, the information independently managed for executing reliability demonstration read operation in adjacent wordline is described And the example of the information for executing reliability demonstration read operation in open wordline.However, as described in referring to Fig.1 2, It can manage jointly for executing the information of reliability demonstration read operation in adjacent wordline and in open wordline The upper information for executing reliability demonstration read operation.

For example, when count value reaches random number, reliability can be executed relative to the wordline for being adjacent to selected word line Verify read operation.It, can be relative to open wordline volume when open wordline is present in including in the memory block of selected word line Other places executes reliability demonstration read operation.

For example, when count value reaches random number, it may be determined that the wordline of opening whether there is in including selected word line In memory block.If open wordline be not present in include selected word line memory block in, can be selected relative to being adjacent to The wordline of wordline executes reliability demonstration read operation.If the wordline opened is present in the memory block including selected word line, Reliability demonstration read operation can be executed relative to open wordline.As described in 1D and Figure 11 E referring to Fig.1, for example, being adjacent to At least one wordline of selected word line can be open wordline.It is tested at this point it is possible to execute reliability relative to adjacent wordline Read operation is demonstrate,proved, while the additional reliability demonstration read operation in the wordline of other openings can be skipped.

In the exemplary embodiment, when in adjacent wordline reliability demonstration read operation and the wordline that is used to open The condition of reliability demonstration read operation when being met simultaneously, as with reference to described in Fig. 9 B, the reliability in adjacent wordline is tested Reliability demonstration read operation in the wordline of card read operation and opening can be distributed to subsequent read command.

Figure 16 is the exemplary flow chart that the subsequent operation for showing to run after reliability demonstration read operation executes.Scheming In 16, the post-processing when executing reliability demonstration read operation in the wordline for storing data is shown.

It can be verified with reception reliability in operating S410 with Figure 16 referring to Fig.1 and read data.Storage control 1200 can To receive the data read from nonvolatile memory 1300 for reliability demonstration.

In operating S420, preliminary post-processing can be run by storage control 1200.For example, can execute such as wrong Accidentally correction, read the processing retried etc..It can be such processing that reading, which retries,：Wherein, when error correction has failed, pass through Change the reading condition of the level of such as read voltage to execute read operation again.

In operating S430, bit error rate BER can be calculated.It can be according to the error correction list of storage control 1200 The error correction result of member 1250 calculates bit error rate BER.

In operating S440, it may be determined that whether BER is more than threshold value.It is tested if it is not greater, then reliability can be terminated Demonstrate,prove the rear operation of read operation.If it is greater, then in operating S450, receipts of reading back can be run by storage control 1200 （reclaim）Post-processing as reliability demonstration read operation.

Receipts of reading back can be such operation：Data are read from storage unit and write on nonvolatile memory by data are read In 1300 other storage units.For example, storage control 1200 can depositing from the wordline for reading target as reliability demonstration Storage unit is read data and is write on data are read in another memory block of nonvolatile memory 1300.Storage control 1200 can The memory block of wordline to read target from including as reliability demonstration reads data and writes on non-volatile memories by data are read In the storage unit of another memory block of device 1300.

If receipts of reading back are performed, the interference of the accumulation of storage unit can be removed.

In the exemplary embodiment, when BER is big unlike threshold value, receipts of reading back can not be executed.However, it is possible to by opening Wordline on reliability demonstration read operation discretely check the interference of the accumulation of open wordline.

Figure 17 is to show to be shown by the another of rear operation that storage control 1200 is run after reliability demonstration read operation The flow chart of example.In fig. 17 it is shown that when executing reliability demonstration read operation on not storing the wordline of opening of data Post-processing.

It can be verified with reception reliability in operation s 510 with Figure 17 referring to Fig.1 and read data.Storage control 1200 can It is read for reliability demonstration with receiving the data read from nonvolatile memory 1300.

In operating S520, cut-off unit can be counted（Or, onunit）Number.End unit（off cell）It can To be intended to the storage unit ended in reliability demonstration read operation.That is, cut-off unit can be it is each have be higher than In the storage unit of the threshold voltage for the read voltage that reliability demonstration read operation uses.Cut-off unit can be since interference causes Its threshold voltage is from the increased storage units of erase status E.Onunit can（on cell）To be intended to test in reliability The storage unit be connected in card read operation.That is, onunit can be it is each have less than reliability demonstration read operation use Read voltage threshold voltage storage unit.Count value can be counted by counter 1230.

In operating S530, it may be determined that whether count value is bigger than threshold value.In the exemplary embodiment, in step S530 In, storage control 1200 determines whether the count value of the number of the onunit calculated in operating S520 is less than threshold value.

If count value is big unlike threshold value, the rear operation of reliability demonstration read operation can be terminated.If count value ratio Threshold value is big, then in operating S540, can close corresponding memory block.For example, memory block can be closed such that relative to The memory block for performing reliability demonstration read operation wherein does not execute further write operation.In the memory block that can be turned off Fully open wordline it is invalid.In the wordline of storage LSB and CSB, the memory space that can be used in storage MSB is invalid. In the wordline of storage LSB, the memory space that can be used in storage CSB and MSB is invalid.It can allow the memory block in closing On read operation.

If memory block is closed, can forbid in such wordline（For example, the wordline opened）In write the behaviour of data Make, because the probability of error caused by the interference due to accumulation is higher.It, can be by adjacent word in the memory block being deactivated Reliability demonstration read operation on line discretely checks the interference of the accumulation of the wordline of storage data.

In step S540, instead of closing memory block, receipts as described above of reading back can be executed in memory block.Alternatively Ground can execute receipts as described above of reading back in memory block, may then turn off block storage.

Figure 18 A are the first exemplary tables for showing to read the rear operation executed later in reliability demonstration.In Figure 18 A, show The example of the receipts of reading back executed by memory block is gone out.

1A to Figure 11 F and Figure 18 A referring to Fig.1 are executed on the lower section wordline WL_k-1 for being adjacent to selected word line WL_k After reliability demonstration read operation, reliability demonstration can be executed on the top wordline WL_k+1 for being adjacent to selected word line WL_k Read operation.

Term " passes through（pass）" it can indicate the service condition operated after being unsatisfactory in reliability demonstration read operation Situation.Term " failure " can indicate the case where service condition operated after meeting in reliability demonstration read operation.

In Figure 18 A, show that the top wordline WL_k+1 for being adjacent to selected word line WL_k is the first of the wordline closed Situation, and be adjacent to the top wordline WL_k+1 of selected word line WL_k and be open the second situation of wordline.

First, the top wordline WL_k+1 for description being adjacent to selected word line WL_k is the first situation of the wordline closed.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can pass through, and above on wordline WL_k+1 Reliability demonstration read operation can pass through.At this point it is possible to be operated after not executing.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can pass through, and above on wordline WL_k+1 Reliability demonstration read operation can fail.At this point it is possible to execute receipts of reading back.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can fail, and above on wordline WL_k+1 Reliability demonstration read operation can pass through.At this point it is possible to execute receipts of reading back.

In the following, the top wordline WL_k+1 that description is adjacent to selected word line WL_k is open the second situation of wordline.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can pass through, and above on wordline WL_k+1 Reliability demonstration read operation can fail.At this point it is possible to close corresponding memory block.

If the reliability demonstration read operation on the wordline WL_k-1 of lower section can fail, wordline above can be skipped Reliability demonstration read operation on WL_k+1.Because of the reliability demonstration read operation failure on the wordline WL_k-1 of lower section, Receipts of reading back can be executed.

Figure 18 B are the second exemplary tables for showing to read the rear operation run later in reliability demonstration.In Figure 18 B, show The example of the receipts of reading back executed according to page is gone out.

1A to Figure 11 F and Figure 18 B referring to Fig.1 are executed on the lower section wordline WL_k-1 for being adjacent to selected word line WL_k After reliability demonstration read operation, reliability demonstration can be executed on the top wordline WL_k+1 for being adjacent to selected word line WL_k Read operation.

In Figure 18 B, show that the top wordline wl_k+1 for being adjacent to selected word line WL_k is the first of the wordline closed Situation, and be adjacent to the top wordline WL_k+1 of selected word line WL_k and be open the second situation of wordline.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can pass through, and above on wordline WL_k+1 Reliability demonstration read operation can fail.At this point it is possible to run receipts of reading back.It is connect with top wordline WL_k+1 for example, being stored in Storage unit in data can be read back receipts.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can fail, and above on wordline WL_k+1 Reliability demonstration read operation can pass through.Because the reliability demonstration read operation failure on the wordline WL_k-1 of lower section, can To execute receipts of reading back.For example, the data being stored in the storage unit being connect with lower section wordline WL_k-1 can be read back receipts.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can fail, and above on wordline WL_k+1 Reliability demonstration read operation can fail.Because the reliability demonstration on lower section wordline WL_k-1 and top wordline WL_k+1 is read Operation all fails, it is possible to which execution reads back receipts twice.For example, being stored in the storage unit being connect with lower section wordline WL_k-1 Data can be read back receipts, and the data being stored in the storage unit being connect with top wordline WL_k+1 can be read back It receives.

Reliability demonstration read operation on the wordline WL_k-1 of lower section can fail, and above on wordline WL_k+1 Reliability demonstration read operation can fail.Because the reliability demonstration read operation failure on the wordline WL_k-1 of lower section, can To execute receipts of reading back.Because of the reliability demonstration read operation failure above on wordline WL_k+1, it is possible to close corresponding Memory block.

Figure 19 is the block diagram for the storage control 1200 ' for schematically illustrating another embodiment according to present inventive concept.With The storage control 1200 of Fig. 1 is compared, and the storage control 1200 ' of Figure 19 may further include the deposit of program/erase period Device 1260.Program/erase period register 1260 can store programming/wiping of the memory block about nonvolatile memory 1300 Except the information in period.

Reliability demonstration read register 1210 can be received from program/erase period register 1260 about program/erase The information in period.Reliability demonstration read register 1210 can be adjusted according to the information about the program/erase period by random The average value for the random number that number generator 1220 generates.For example, reliability demonstration read register 1210 can be with program/erase week The increase of phase proportionally reduces the average value of random number.

Figure 20 is the block diagram for the storage control 1200 " for schematically illustrating a further embodiment according to present inventive concept.With The storage control 1200 of Fig. 1 is compared, and the storage control 1200 " of Figure 20 can not include randomizer 1220.Read control Unit 1240 processed can be tested according to the information being stored in reliability demonstration read register 1210 to periodically carry out reliability Card is read.

Figure 21 is the block diagram of the application for the storage system for schematically illustrating the embodiment according to present inventive concept.With reference to figure 21, storage system may include nonvolatile memory 2300 and storage control 2200.

Storage control 2200 may include referring to Fig.1, Figure 19 or Figure 20 description storage control 1200,1200 ' or 1200”。

Nonvolatile memory 2300 may include multiple non-volatile memory chips.Non-volatile memory chip can be by It is divided into multiple groups.Non-volatile memory chip in each group may be configured to via public passage and storage control 2200 communications.In figure 21, show example, plurality of non-volatile memory chip via multiple channel C H1 to CHk with deposit Controller 2200 is stored up to communicate.

Figure 22 is the block diagram for the storage card for schematically illustrating the embodiment according to present inventive concept.With reference to Figure 22, storage card May include nonvolatile memory 3300, storage control 3200 and connector 3400.

Storage control 3200 may include referring to Fig.1, Figure 19 or Figure 20 description storage control 1200,1200 ' or 1200”。

Storage card may include such as PC cards（PCMCIA：Personal computer memory card international federation）, compact dodge Deposit card（CF）, smart media card（SM、SMC）, memory stick, multimedia card（MMC、RS-MMC、MMCmicro）, SD card（SD、 miniSD、microSD、SDHC）, generic flash memory part（UFS）Etc. storage card.

Figure 23 is the block diagram for the solid state drive for schematically illustrating the embodiment according to present inventive concept.With reference to Figure 23, Gu State driver may include multiple nonvolatile memories 4300, storage control 4200 and connector 4400.

Storage control 4200 may include referring to Fig.1, Figure 19 or Figure 20 description storage control 1200,1200 ' or 1200”。

Although describing present inventive concept with reference to exemplary embodiment, those skilled in the art are clearly, can To make various changes without departing from spirit and scope defined by the present invention.It will thus be appreciated that above example is not It is restrictive and be merely illustrative.

Claims

1. a kind of method of operation storage control, including：

Read operation is executed on a memory；

Count value and reference value are compared by storage control, the count value is based on the reading for being issued to memory by storage control The number of order；

When count value reaches reference value, reliability demonstration read operation is executed at least one of memory unselected word line, The unselected word line is wordline non-selected during read operation；And

Receipts of reading back are executed according to the result of reliability demonstration read operation.

2. the method as described in claim 1 further includes：

Random number is generated as the reference value.

3. method as claimed in claim 2, wherein the random number is generated, so that the random number generated with the time is put down Mean value approaches desired value.

4. method as claimed in claim 2 executes reliable wherein if the count value is greater than or equal to the random number Property verification read operation.

5. method as claimed in claim 4, further includes：

If executing reliability demonstration read operation, the count value is resetted.

6. method as claimed in claim 2, further includes：

It keeps for multiple count values and random number of each in the block in memory；And wherein

It is described relatively to use count value associated with the block that the read operation is directed toward and random number.

7. the method as described in claim 1 executes wherein executing the reliability demonstration read operation for being adjacent to selected word The reliability demonstration read operation of at least one unselected word line of line.

8. the method as described in claim 1 wherein the unselected word line is open wordline, and is connected to open wordline Each storage unit be in erase status.

9. the method as described in claim 1 executes wherein executing the reliability demonstration read operation for being adjacent to selected word The reliability demonstration read operation of at least one unselected word line of line, and then executed for extremely if there is the wordline arbitrarily opened The reliability demonstration read operation of the wordline of a few opening, and the storage unit for being connected to open wordline is in erasing shape State.

10. the method as described in claim 1, packet receiving of reading back described in execution includes：

Determine whether the data read during reliability demonstration read operation meet condition；And

Receipts of reading back are executed if meeting condition.

11. method as claimed in claim 10, wherein the condition is the data read during reliability demonstration read operation Whether bit error rate is more than threshold value.

12. method as claimed in claim 11, wherein the receipts of reading back copy to the data of the block including selected word line newly Block and close include selected word line block.

13. the method as described in claim 1 further includes：

The executive control operation if the result of reliability demonstration read operation meets condition,

The wherein described condition is whether the number for the cut-off storage unit read during reliability demonstration read operation is more than threshold value.

14. method as claimed in claim 13, wherein the control operation closing includes the block of selected word line.

15. a kind of storage control, including：

Counter is configured to generate count value based on the number for the read command for being issued to memory by storage control；

Read Controller is configured to execute read operation, is configured to compare count value and reference value, and when count value reaches ginseng When examining value, tested for executing reliability from least one storage unit associated at least one of memory unselected word line Read operation is demonstrate,proved with the reliability of verifying memory, wherein

The storage control is configured to execute receipts of reading back according to the result of reliability demonstration read operation.

16. storage control as claimed in claim 15, further includes：

First register, is configured to store desired value.

17. storage control as claimed in claim 16, further includes：

Randomizer is configured to generate random number based on desired value；And wherein

The Read Controller is configured to read behaviour using the random number as with reference to value to determine whether to execute reliability demonstration Make.

18. storage control as claimed in claim 16, further includes：

Second register stores the information in the program/erase period about memory；And wherein

The storage control is configured to change desired value based on described information.

19. storage control as claimed in claim 15, if wherein the counter to be configured to the Read Controller true Surely it executes reliability demonstration read operation and then resets the count value.

20. storage control as claimed in claim 15, wherein

The counter is configured to keep multiple respective count values of each in the block in memory；

Randomizer is configured to keep being used for the multiple respective random number of each in the block；

The Read Controller is configured to based on respective count value associated with the block that read operation is directed toward and respective random It counts to determine whether to execute reliability demonstration read operation, the respective random number is used as reference value.

21. storage control as claimed in claim 15, wherein the Read Controller be configured to execute for be adjacent to by The reliability demonstration read operation of at least one unselected word line of word selection line.

22. storage control as claimed in claim 15 wherein the unselected word line is open wordline, and is connected to and beats Each storage unit for the wordline opened is in erase status.

23. storage control as claimed in claim 15, wherein the Read Controller be configured to execute for be adjacent to by The reliability demonstration read operation of at least one unselected word line of word selection line, and then execute if there is the wordline arbitrarily opened pair In the reliability demonstration read operation of the wordline of at least one opening, and the storage unit for being connected to open wordline is in erasing State.

24. storage control as claimed in claim 15, wherein the Read Controller is configured to determine in reliability demonstration Whether the data read during read operation meet condition, and receipts of reading back are executed if meeting condition.

25. storage control as claimed in claim 24, wherein the condition is read during reliability demonstration read operation Whether the bit error rate of data is more than threshold value.

26. storage control as claimed in claim 15, wherein the receipts of reading back answer the data of the block including selected word line Make new block and close include selected word line block.

27. storage control as claimed in claim 15, if wherein the Read Controller is configured as the reliability tests Card read operation meets condition then executive control operation, and the condition is that the cut-off read during reliability demonstration read operation is deposited Whether the number of storage unit is more than threshold value.

28. storage control as claimed in claim 27, wherein the control operation closing includes the block of selected word line.

29. a kind of storage system, including：

At least one processor；And

Storage control is configured to control memory, compares count value and reference value, and the count value is based on by memory The number of read operation that executes of storage control, and when count value reaches reference value, for from memory to Few associated at least one storage unit of a unselected word line executes reliability demonstration read operation, wherein

30. storage system as claimed in claim 29, wherein the memory is nonvolatile memory.

31. storage system as claimed in claim 30, wherein the memory includes the string of storage unit, each string includes string Join multiple storage units of connection, and multiple storage units in string are associated from different wordline.

32. storage system as claimed in claim 29, wherein the storage control is configured to generate random number as ginseng Examine value.

33. storage system as claimed in claim 32, wherein the storage control be configured to generate random number so that The average value of the random number generated with the time approaches desired value.

34. storage system as claimed in claim 32, if wherein storage control is configured to count value and is greater than or equal to Random number, which then determines, executes reliability demonstration read operation.

35. storage system as claimed in claim 34, if wherein storage control is configured to execute reliability demonstration reading Operate then reset count value.

36. storage system as claimed in claim 32, wherein

The storage control is configured to keep multiple count values and random number of each in the block in memory； And

The storage control is configured to use count value associated with the block that the read operation is directed toward and random number.

37. storage system as claimed in claim 29, wherein the storage control be configured to execute for be adjacent to by The reliability demonstration read operation of at least one unselected word line of word selection line.

38. storage system as claimed in claim 29 wherein the unselected word line is open wordline, and is connected to opening Each storage unit of wordline be in erase status.

39. storage system as claimed in claim 29, wherein the storage control be configured to execute for be adjacent to by The reliability demonstration read operation of at least one unselected word line of word selection line, and then execute if there is the wordline arbitrarily opened pair In the reliability demonstration read operation of the wordline of at least one opening, and the storage unit for being connected to open wordline is in erasing State.

40. storage system as claimed in claim 29, wherein the storage control is configured to determine in reliability demonstration Whether the data read during read operation meet condition, and receipts of reading back are executed if meeting condition.

41. storage system as claimed in claim 40, wherein the condition is the number read during reliability demonstration read operation According to bit error rate whether be more than threshold value.

42. storage system as claimed in claim 29, wherein described read back is received the data duplication of the block including selected word line To new block and close include selected word line block.

43. storage system as claimed in claim 29, if wherein the storage control is configured as the reliability tests Card read operation meets condition then executive control operation, and the condition is that the cut-off read during reliability demonstration read operation is deposited Whether the number of storage unit is more than threshold value.

44. storage system as claimed in claim 43, wherein the control operation closing includes the block of selected word line.

45. a kind of method of operation Nonvolatile memory system, including：

Reading is executed on the non-volatile memory cells of the selected selected word line in the block in being connected to nonvolatile semiconductor memory member Operation；

Count value and reference value are compared by storage control, the count value is based on being issued to non-volatile deposit by storage control The number of the read command of reservoir, for from associated at least one non-volatile with selected at least one unselected word line in the block Storage unit executes reliability demonstration read operation with verification threshold voltage's distribiuting, and the unselected word line is unselected during read operation Select and unprogrammed wordline after an erase operation；And

The block of selection is closed according to the result of reliability demonstration read operation.

46. method as claimed in claim 45, further includes：

Random number is generated to be used as with reference to value.

47. method as claimed in claim 46, wherein generating the random number so that the random number that generates with the time Average value approaches expected value.

48. method as claimed in claim 46, wherein executing reliability demonstration if count value is greater than or equal to random number Read operation.

49. method as claimed in claim 48, further includes：

The reset count value if executing reliability demonstration read operation.

50. method as claimed in claim 45, further includes：

It keeps for multiple count values and random number of each in the block in nonvolatile semiconductor memory member；And wherein

Relatively use count value associated with selected block and random number.

51. method as claimed in claim 45, wherein it is selected for being adjacent to execute the reliability demonstration read operation execution The reliability demonstration read operation of at least one unselected word line of wordline.

52. method as claimed in claim 45 wherein the unselected word line is open wordline, and is connected to open word Each non-volatile memory cells of line are in erase status.

53. method as claimed in claim 45, wherein it is selected for being adjacent to execute the reliability demonstration read operation execution The reliability demonstration read operation of at least one unselected word line of wordline, and then execute if there is the wordline arbitrarily opened for The reliability demonstration read operation of the wordline of at least one opening, and be connected at the non-volatile memory cells of open wordline In erase status.

54. method as claimed in claim 45, wherein closing selected piece and including：

Determine whether the threshold voltage read during reliability demonstration read operation distribution meets condition；And

The block of selection is closed if meeting condition.

55. method as claimed in claim 54, wherein the condition is the threshold value electricity read during reliability demonstration read operation Press whether the bit error rate of distribution is more than threshold value.

56. method as claimed in claim 45, wherein described close includes preventing to the nonvolatile memory at least The further programming of a part.

57. method as claimed in claim 54 is deposited wherein the condition is the cut-off read during reliability demonstration read operation Whether the number of storage unit is more than threshold value.

58. a kind of method of operation Nonvolatile memory system, including：

It is chosen hold on the selected non-volatile memory cells of selected word line in the block in being connected to nonvolatile semiconductor memory member Row read operation；

Reliability demonstration read operation is executed to verify the block of selection, the reliability demonstration read operation be used for from it is selected in the block At least one unselected non-volatile memory cells of at least one unselected word line connection read data, and the unselected word line is to read to grasp Non-selected wordline during work；And

Result based on reliability demonstration read operation executes the post-processing for being chosen block.

59. method as claimed in claim 58, wherein execution reliability demonstration read operation execution is selected for being adjacent to The reliability demonstration read operation of at least one unselected word line of wordline.

60. method as claimed in claim 58 wherein the unselected word line is open wordline, and is connected to open word Each non-volatile memory cells of line are in erase status.

61. method as claimed in claim 58, wherein executing at least one unselected word line for being adjacent to selected word line Reliability demonstration read operation, and then execute if there is the wordline arbitrarily opened at least one opening wordline it is reliable Property verification read operation, and the non-volatile memory cells for being connected to open wordline are in erase status.

62. method as claimed in claim 58, wherein if the bit difference for the data read during reliability demonstration read operation Error rate then executes post-processing more than threshold value.

63. method as claimed in claim 62, wherein the post-processing copies to the data of the block including selected word line newly Block and close include selected word line block.

64. method as claimed in claim 58, wherein if the cut-off storage unit read during reliability demonstration read operation Number then execute post-processing more than threshold value.

65. the method as described in claim 64, wherein the block for the selection for including selected word line is closed in the post-processing.