CN103943741A - Semiconductor light emitting device preparation method based on laser stripping - Google Patents
Semiconductor light emitting device preparation method based on laser stripping Download PDFInfo
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- CN103943741A CN103943741A CN201310017195.6A CN201310017195A CN103943741A CN 103943741 A CN103943741 A CN 103943741A CN 201310017195 A CN201310017195 A CN 201310017195A CN 103943741 A CN103943741 A CN 103943741A
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- Prior art keywords
- light emitting
- sapphire substrate
- preparation
- semiconductor device
- emitting semiconductor
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 44
- 239000010980 sapphire Substances 0.000 claims abstract description 44
- 238000002955 isolation Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a method which protects LED tube cores in a sapphire substrate laser stripping process. According to the invention, when discrete tube cores are formed on an etching epitaxial layer, partial epitaxial layer is retained between tube cores as an isolation belt; the problem that the edge of a tube core cracks in the laser stripping process is solved; and the yield is improved. The method provided by the invention is applied to the preparation of a GaN based semiconductor light emitting device.
Description
Technical field
The present invention relates to the preparation technology of light emitting semiconductor device.More specifically, the present invention relates to adopt the method to the protection of GaN base epitaxial loayer in laser lift-off process.
Background technology
Sapphire Substrate is as the epitaxially grown main substrate of GaN base LED, and its conductivity and thermal diffusivity are all poor.Due to Sapphire Substrate poorly conductive, traditional GaN base LED will adopt transversary, causes electric current to stop up and heating.And poor heat conductivility has limited the power of luminescent device.After adopting laser lift-off technique that Sapphire Substrate is removed, light-emitting diode is made to vertical stratification, can effectively solve heat radiation and go out optical issue.In order to improve light efficiency and the power of GaN base LED, propose laser lift-off Sapphire Substrate technology, after preparing epitaxial loayer in Sapphire Substrate, epitaxial loayer has been combined with supporting substrate, then adopt laser-stripping method to remove Sapphire Substrate, device is made to vertical stratification.The bottleneck of commercial application laser lift-off Sapphire Substrate technology but rate of finished products is low.Due to Power Limitation, must to epitaxial wafer one by one tube core scanning just can complete peeling off of whole Sapphire Substrate.Typically, the tube core that laser facula starts to irradiate is most complete, and the GaN absorbing laser decomposition at growth interface place has generated nitrogen, and the effusion of nitrogen can make the edge break of adjacent unstripped tube core.Stress between the part of having peeled off and unstripped GaN film also can make GaN film breaks simultaneously.
Summary of the invention
The problem of breaking for solve the discrete die edge that exists in laser lift-off Sapphire Substrate process, the present invention proposes a kind of preparation method of light emitting semiconductor device, comprise the following steps: grown buffer layer, N-type GaN layer, active layer, P type GaN layer successively in Sapphire Substrate, form epitaxial loayer; Described in etching, epitaxial loayer is to exposing Sapphire Substrate to produce multiple discrete tube cores, and between every two adjacent described tube cores, all reserve part epitaxial loayer is as isolation strip, and to have a place at least be disjunct in the isolation strip of tube core surrounding; Adopt laser-stripping method to remove Sapphire Substrate.
As preferred version of the present invention, the isolation strip of wherein said tube core surrounding is mutually discrete.
As preferred version of the present invention, wherein said etching is to adopt ICP or RIE dry etching.
As preferred version of the present invention, the width of wherein said isolation strip is 5-100 micron.
As preferred version of the present invention, the width of wherein said isolation strip is 20-40 micron.
As preferred version of the present invention, between described isolation strip and adjacent die edge, the width of groove is 1-100 micron.
As preferred version of the present invention, before laser lift-off Sapphire Substrate, Sapphire Substrate is carried out to attenuate and polishing.
As preferred version of the present invention, before laser lift-off Sapphire Substrate, the epitaxial loayer after etching is combined with supporting substrate.
As preferred version of the present invention, the method that the epitaxial loayer after described etching is combined with supporting substrate is to solidify after eutectic bonding or gluing.
As preferred version of the present invention, after epitaxial loayer after etching is combined with supporting substrate, at the opposite side application of resin glue of supporting substrate, assisting base plate is set on resin glue, and use resin glue described in ultraviolet light polymerization, remove laser lift-off Sapphire Substrate after described assisting base plate, remove described resin glue; Also can after laser lift-off Sapphire Substrate, described assisting base plate and resin glue be removed in the lump.
As preferred version of the present invention, before laser lift-off Sapphire Substrate, gluing curing with the first temporary base on the epitaxial loayer after etching; After laser lift-off Sapphire Substrate, release surface is combined with the second temporary base; Remove the first temporary base; With supporting substrate bonding; Remove the second temporary base.
Beneficial effect of the present invention is as follows:
Owing to having retained isolation strip, the nitrogen that in laser lift-off process, GaN decomposition produces first destroyed isolation strip before the adjacent tube core of contact, what make that the impact of the nitrogen that adjacent die edge is subject to becomes is very little, stress between the part of having peeled off and unstripped GaN film is also discharged at isolation strip place simultaneously, solve the problem that die edge is broken, the integrality that has ensured tube core after laser lift-off Sapphire Substrate, has improved rate of finished products.
Brief description of the drawings
Fig. 1 is the partial schematic diagram after epitaxial loayer etching.
Fig. 2 a-2h is the schematic diagram of the manufacture process of one embodiment of the invention.
Fig. 3 a-3i is the schematic diagram of the manufacture process of another embodiment of the present invention.
Identifier declaration in figure:
Tube core 1, isolation strip 2, groove 3, Sapphire Substrate 100, epitaxial loayer 110, supporting substrate 120, resin glue 210, assisting base plate 220, the first temporary base 310, the second temporary bases 320.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described.
The present invention proposes a kind of preparation method of light emitting semiconductor device, comprises the following steps: grown buffer layer, N-type GaN layer, active layer, P type GaN layer successively in Sapphire Substrate 100, form epitaxial loayer 110; Described in etching, epitaxial loayer 110 is to exposing Sapphire Substrate 100 to produce multiple discrete tube cores 1, and between every two adjacent described tube cores 1, all reserve part epitaxial loayer 110 is as isolation strip 2, and isolation strip 2 between different die 1 is discrete; Adopt laser-stripping method to remove Sapphire Substrate 100.
As shown in Figure 1, between every two adjacent tube cores 1, all reserve part epitaxial loayer is as isolation strip 2 for epitaxial loayer 110 structures after etching, and isolation strip 2 is discontinuous, and the width of isolation strip 2 is 5-100 micron.Between isolation strip 2 and adjacent tube core 1, be formed with groove 3, the width of groove 3 is 1-100 micron.
Embodiment 1
As shown in Figure 2 a, grown buffer layer, N-type GaN layer, active layer, P type GaN layer successively in Sapphire Substrate 100, form epitaxial loayer 110.Sapphire Substrate 100 is carried out to mechanical lapping attenuate polishing.As shown in Figure 2 b, adopt ICP or RIE dry etching epitaxial loayer 110, epitaxial loayer is worn to exposing Sapphire Substrate 100 for 110 quarters, form multiple discrete tube cores 1, between every two adjacent described tube cores 1, all reserve part epitaxial loayer 110 is as isolation strip 2 simultaneously, and the isolation strip 2 between different die 1 is discontinuous.The width of isolation strip 2 is 20 microns, and between adjacent tube core 1 edge, the width of groove 3 is 10 microns.As shown in Figure 2 c, the epitaxial loayer after etching 110, by method and supporting substrate 120 combinations of eutectic bonding, is bondd and solidified with supporting substrate 120 after gluing on also can the epitaxial loayer 110 after etching.Described supporting substrate 120 is any one in Si, pottery, W, Cu, Mo, GaAs, graphite, glass.As shown in Figure 2 d, at the opposite side application of resin glue 210 of supporting substrate 120.Described resin glue 210 plays the effect of relieve stresses in laser lift-off process.Smooth for the resin glue 210 that coating is got on, as shown in Figure 2 e, use transparent assisting base plate 220 as glass, sapphire flatten resin glue 210, then adopt ultraviolet light that resin glue 210 is solidified, remove assisting base plate 220.As shown in Fig. 2 f, adopt the method for laser lift-off to remove Sapphire Substrate 100.As shown in Figure 2 g, remove described resin glue 210.Also assisting base plate 220 and resin glue 210 can be removed in the lump after laser lift-off.Remove residual isolation strip 2.As shown in Fig. 2 h, adopt common processes to form P, N electrode, complete the preparation of light emitting semiconductor device.
Embodiment 2
As shown in Figure 3 a, grown buffer layer, N-type GaN layer, active layer, P type GaN layer successively in Sapphire Substrate 100, form epitaxial loayer 110.Sapphire Substrate 100 is carried out to mechanical lapping attenuate polishing.As shown in Figure 3 b, adopt ICP or RIE dry etching epitaxial loayer 110, epitaxial loayer is worn to exposing Sapphire Substrate 100 for 110 quarters, form multiple discrete tube cores 1, between every two adjacent described tube cores 1, all reserve part epitaxial loayer 110 is as isolation strip 2 simultaneously, and the isolation strip 2 between different die 1 is discontinuous.The width of isolation strip 2 is 40 microns, and between adjacent tube core 1 edge, the width of groove 3 is 10 microns.As shown in Figure 3 c, on the epitaxial loayer 110 after etching, apply High temp. epoxy resins modified adhesive, with curing after the first temporary base 310 silicon substrate bondings.As shown in Figure 3 d, use the method for laser lift-off to remove Sapphire Substrate 100, adopt 248 nanometer excimer laser, power 550 milliwatts.As shown in Figure 3 e, in release surface, apply after modification heterocycle resin glue with the second temporary base 320 silicon substrates bondings after curing.Also can be in release surface after depositing Ti Au protective layer with the second temporary base 320 silicon substrate bondings.As shown in Fig. 3 f; after protecting the second temporary base 320 with wax; add hydrogen peroxide with hydrofluoric acid and add nitric acid (5:2:2) corrosion the first interim silicon substrate 310; adopt toluene at 100 DEG C, to corrode this High temp. epoxy resins modified adhesive. as shown in Fig. 3 g; the epitaxial loayer exposing is bonded on supporting substrate 120, and described supporting substrate 120 is silicon substrate.As shown in Fig. 3 h; supporting substrate 120 use waxes are protected; add hydrogen peroxide with hydrofluoric acid and add nitric acid (5:2:2) corrosion the second interim silicon substrate 320, and fall modification heterocycle resin glue with dioxysulfate aqueous corrosion, then clean for the N-type GaN layer surface obtaining.Remove residual isolation strip 2.As shown in Fig. 3 i, adopt common processes to form P, N electrode, complete the preparation of light emitting semiconductor device.
Claims (11)
1. a preparation method for light emitting semiconductor device, comprising:
Grown buffer layer, N-type GaN layer, active layer, P type GaN layer successively in Sapphire Substrate, form epitaxial loayer;
Described in etching, epitaxial loayer is to exposing Sapphire Substrate to produce multiple discrete tube cores, and between every two adjacent described tube cores, all reserve part epitaxial loayer is as isolation strip, and to have a place at least be disjunct in the isolation strip of tube core surrounding;
Adopt laser-stripping method to remove Sapphire Substrate.
2. the preparation method of light emitting semiconductor device according to claim 1, is characterized in that: the isolation strip of described tube core surrounding is mutually discrete.
3. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: described etching is to adopt ICP or RIE dry etching.
4. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: the width of described isolation strip is 5-100 micron.
5. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: the width of described isolation strip is 20-40 micron.
6. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: between described isolation strip and adjacent die edge, the width of groove is 1-100 micron.
7. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: before laser lift-off Sapphire Substrate, Sapphire Substrate is carried out to attenuate and polishing.
8. the preparation method of light emitting semiconductor device according to claim 1 and 2, is characterized in that: before laser lift-off Sapphire Substrate, the epitaxial loayer after etching is combined with supporting substrate.
9. the preparation method of light emitting semiconductor device according to claim 8, is characterized in that: the method that the epitaxial loayer after described etching is combined with supporting substrate is to solidify after eutectic bonding or gluing.
10.. the preparation method of light emitting semiconductor device according to claim 8, it is characterized in that: after the epitaxial loayer after etching is combined with supporting substrate, at the opposite side application of resin glue of supporting substrate, assisting base plate is set on resin glue, and use resin glue described in ultraviolet light polymerization, remove laser lift-off Sapphire Substrate after described assisting base plate, remove described resin glue; Also can after laser lift-off Sapphire Substrate, described assisting base plate and resin glue be removed in the lump.
11.. the preparation method of light emitting semiconductor device according to claim 1, is characterized in that: before laser lift-off Sapphire Substrate, and gluing curing with the first temporary base on the epitaxial loayer after etching; After laser lift-off Sapphire Substrate, release surface is combined with the second temporary base; Remove the first temporary base; With supporting substrate bonding; Remove the second temporary base.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310017195.6A CN103943741A (en) | 2013-01-17 | 2013-01-17 | Semiconductor light emitting device preparation method based on laser stripping |
| PCT/CN2014/000054 WO2014110982A1 (en) | 2013-01-17 | 2014-01-17 | Laser lift-off-based method for preparing semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310017195.6A CN103943741A (en) | 2013-01-17 | 2013-01-17 | Semiconductor light emitting device preparation method based on laser stripping |
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| CN103943741A true CN103943741A (en) | 2014-07-23 |
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| CN201310017195.6A Pending CN103943741A (en) | 2013-01-17 | 2013-01-17 | Semiconductor light emitting device preparation method based on laser stripping |
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| WO (1) | WO2014110982A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017202A (en) * | 2015-12-04 | 2017-08-04 | 株式会社迪思科 | The processing method of chip |
| CN107579139A (en) * | 2017-08-31 | 2018-01-12 | 西安交通大学 | A kind of manufacture method of vertical structure semiconductor devices |
| CN107622977A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of gradual micron order Sapphire Substrate laser lift-off |
| CN109887869A (en) * | 2019-03-14 | 2019-06-14 | 南通中铁华宇电气有限公司 | A kind of laser lift-off structure |
| WO2020119065A1 (en) * | 2018-12-14 | 2020-06-18 | 云谷（固安）科技有限公司 | Laser lift-off method for semiconductor device |
| WO2023010292A1 (en) * | 2021-08-03 | 2023-02-09 | 重庆康佳光电技术研究院有限公司 | Light-emitting device and method for manufacturing same |
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| CN101241964A (en) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | A luminescent part for laser GaN base peeling based on compound separation method and its making method |
| CN102496667A (en) * | 2011-12-20 | 2012-06-13 | 中国科学院半导体研究所 | Method for manufacturing GaN-based thin-film chip |
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| US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
| CN102790138B (en) * | 2011-05-19 | 2016-08-31 | 易美芯光（北京）科技有限公司 | A kind of production method of GaN base thin film chip |
| CN102790137B (en) * | 2011-05-19 | 2016-08-31 | 晶能光电（江西）有限公司 | The preparation method of GaN base thin film chip |
| CN103489979A (en) * | 2013-09-12 | 2014-01-01 | 易美芯光（北京）科技有限公司 | Method for manufacturing semiconductor light emitting devices |
-
2013
- 2013-01-17 CN CN201310017195.6A patent/CN103943741A/en active Pending
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2014
- 2014-01-17 WO PCT/CN2014/000054 patent/WO2014110982A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101241964A (en) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | A luminescent part for laser GaN base peeling based on compound separation method and its making method |
| CN102496667A (en) * | 2011-12-20 | 2012-06-13 | 中国科学院半导体研究所 | Method for manufacturing GaN-based thin-film chip |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017202A (en) * | 2015-12-04 | 2017-08-04 | 株式会社迪思科 | The processing method of chip |
| CN107579139A (en) * | 2017-08-31 | 2018-01-12 | 西安交通大学 | A kind of manufacture method of vertical structure semiconductor devices |
| CN107622977A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of gradual micron order Sapphire Substrate laser lift-off |
| WO2020119065A1 (en) * | 2018-12-14 | 2020-06-18 | 云谷（固安）科技有限公司 | Laser lift-off method for semiconductor device |
| CN111326463A (en) * | 2018-12-14 | 2020-06-23 | 云谷（固安）科技有限公司 | Laser lift-off method for semiconductor device |
| CN111326463B (en) * | 2018-12-14 | 2023-06-23 | 云谷（固安）科技有限公司 | Laser stripping method for semiconductor device |
| CN109887869A (en) * | 2019-03-14 | 2019-06-14 | 南通中铁华宇电气有限公司 | A kind of laser lift-off structure |
| CN109887869B (en) * | 2019-03-14 | 2022-11-08 | 南通中铁华宇电气有限公司 | Laser stripping structure |
| WO2023010292A1 (en) * | 2021-08-03 | 2023-02-09 | 重庆康佳光电技术研究院有限公司 | Light-emitting device and method for manufacturing same |
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| Publication number | Publication date |
|---|---|
| WO2014110982A1 (en) | 2014-07-24 |
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Application publication date: 20140723 |