CN103930994A - Optical tilted charge devices and methods - Google Patents
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- H—ELECTRICITY
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- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
A method for producing optical signals with improved efficiency, including the following steps: providing a layered semiconductor structure that includes a substrate, a semiconductor collector region of a first conductivity type, a semiconductor base region of a second conductivity type disposed on the collector region, and a semiconductor emitter region of the first semiconductor type disposed as a mesa over a portion of a surface of the base region; providing, in the base region, at least one region exhibiting quantum size effects; providing collector, base, and emitter electrodes, respectively coupled with the collector, base and emitter regions; providing a tunnel barrier layer over at least the exposed portion of the surface of the base region; and applying signals with respect to the collector, base, and emitter electrodes to produce optical signals from the base region. Also disclosed is an optical tilted charge device with an InGaAsN quantum well.
Description
Technical field
The present invention relates to the field of semiconductor light-emitting apparatus and technology, and more particularly, relate to inclination electric charge light-emitting device and method.
Background technology
In background of the present invention, comprise and heterojunction bipolar transistor (HBT, it is electric inclination charge devices) and the relevant technology of lighting transistor, translaser and inclination electric charge light-emitting diode (be respectively LET, TL and TCLED, all described devices are all optical tilt charge devices).Inclination charge devices obtains its name according to the energy diagram characteristic in the base region of device, described base region is similar to the decline oblique wave shape from emitter-base bandgap grading interface to collector electrode with (or for two-terminal device, draining) interface.This expression is the inclination electric charge colony of the charge carrier of dynamic flow (exiting via collector electrode (or drain electrode) " soon " charge carrier restructuring and " slowly " charge carrier).
About the optical tilt charge devices and the technology that conventionally adopt one or more quantal size region in the base region of device, can be with reference to (for instance) the 7th, 091, No. 082, the 7th, 286, No. 583, the 7th, 354, No. 780, the 7th, 535, No. 034, the 7th, 693, No. 195, the 7th, 696, No. 536, the 7th, 711, No. 015, the 7th, 813, No. 396, the 7th, 888, No. 199, the 7th, 888, No. 625, the 7th, 953, No. 133, the 7th, 998, No. 807, the 8th, 005, No. 124, the 8th, 179, No. 937 and the 8th, 179, No. 939 United States Patent (USP)s; No. US2005/0040432, No. US2005/0054172, No. US2008/0240173, No. US2009/0134939, No. US2010/0034228, No. US2010/0202483, No. US2010/0202484, No. US2010/0272140, No. US2010/0289427, No. US2011/0150487 and US2012/0068151 U.S. Patent Application Publication case; And the open case of quoting in the open case of No. WO/2005/020287 and WO/2006/093883 pct international patent and US2012/0068151 U.S. Patent Application Publication case.
Optical tilt charge devices comprises the zone of action, and the described zone of action has the built-in free majority carrier of a polarity.In an input of this zone of action, inject opposite polarity single kind minority carrier and allow it to cross over the diffusion of the described zone of action.This zone of action has realization and strengthens the conduction of majority carrier and the feature of the radiation of minority carrier restructuring.On the outlet side in described region, then by independent and very fast collect, discharge, loss or restructuring minority carrier.Electric contact is coupled to this global function region.
At the beginning of 2004, open case is described a kind of optical tilt charge devices, described optical tilt charge devices is incorporated into quantum well in the base region of described device so that enhanced rad is recombinated (referring to the quantum well base stage heterogenous dual-pole lighting transistor (Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor) of Feng M (M.Feng), the little Huo Longyake of N (N.Holonyak Jr.) and R old (R.Chan), Applied Physics journal 84,1952,2004).In described paper, prove that optical signalling is to follow sinusoidal electrical input signal up to the speed of 1GHz.After more than 5 years, study and substantially develop (except other exploitation further, relevant with the design of method of operation, active region and epitaxial layer structure) afterwards, report as the high speed inclination charge devices of spontaneous emission optical transmitting set with the bandwidth of 4.3GHz (LET) and after a while with the bandwidth operation of 7GHz (TCLED).(referring to the high speed inclination electric charge light-emitting diode (Tilted-Charge High Speed (7GHz) Light Emitting Diode) of G Walter (G.Walter), CH Wu (C.H.Wu), HW gloomy (H.W.Then), Feng M (M.Feng) and the little Huo Longyake of N (N.Holonyak Jr.), Applied Physics journal 94,231125,2009).Although realized since then further improvement, expect that the extra progress of efficiency and bandwidth is for the electrooptical device and the technology that realize viable commercial.
For instance, the inclination electric charge light-emitting device (being for instance, the form of lighting transistor and inclination electric charge lighting transistor and inclination electric charge light-emitting diode) of the type above disclosing in cited file can be relatively high speed and bandwidth produce spontaneous luminescence.But, for some application, by expect to have can be much higher speed and inclination electric charge spontaneous luminescence device and the technology of bandwidth operation, and in the middle of the target of the one of the realization of these a little devices and technology in aspect of the present invention.
In US2010/202484 U.S. Patent Application Publication case, show as a setting the QW heterogenous dual-pole lighting transistor (QW-HBLET) of the base region with dark QW design and homogeneous doping.The patent that can above quote with reference to (for instance).Relatively dark QW auxiliary block post is caught charge carrier deflection dispersion and is recombinated away from optics cavity.Except described situation (as described in charge carrier deflection dispersion), described charge carrier is thermalization more also, and is lost in non-radiative restructuring towards the charge carrier major part of emitter-base bandgap grading thermalization again (return to diffusion).As the improvement to it, state a kind of asymmetric base region, described asymmetric base region has compares the relatively wide band gap base stage subregion (QW) in emitter-base bandgap grading side with the relative narrow band gap subregion in collector electrode side.In addition, limit the diffusion of the charge carrier of catching and gather way former thereby use one or more shallow quantum well for comprising.
Applicant's research is indicated, uses the high composition alloy of heavy doping (for example, ternary or quaternary material) can cause significantly higher non-radiative restructuring (η in the base region of optical tilt charge devices (OTCD)
non-rad, base recombination about 30% to 90%).Some research in this research has concentrated on the use of the relatively shallow InGaAs quantum well (△ E (quantum well degree of depth energy) is the little multiple of kT, Δ E～kT) with the transmitting photon energy that can be coupled to the photoelectric detector based on InP/InGaAs.(also referring to the open application case US2010/0202484 that above quoted).Use shallow quantum well to allow to utilize the method for phonon as the speed of increase optical tilt charge devices.But, have the application-specific of the favourable optical tilt charge devices of deep quantum well (Δ E > > kT) wherein, and device speed is less worry; For instance, be to need in the Optical devices of high base current density operation and stabling current gain at the bias current characteristic that changes or temperature.Apply for this, the use for example, with the high composition alloy base stage (, AlGaAs) of its attendant disadvantages will seem inevitable.
Provide and need the improvement of the optical tilt charge devices that uses relatively dark quantum well to avoid following defect in the middle of other object of the present invention simultaneously.
Summary of the invention
Can following problem be proposed: how to design a kind of effective, high speed spontaneous emission inclination charge devices? for instance, how to make bandwidth progressive to 10GHz from 0.1GHz? one method can be and makes device district less of and narrower to produce less resistive (R), smaller capacitive (C) and small electric sense (L), or only utilizes the design rule of the fastest InGaP/GaAs heterojunction bipolar transistor (HBT).This can not realize described target.
Although it is derived from transistor technology, optical tilt charge devices and high speed HBT transistor (electric inclination charge devices) are shared few Joint Designing speciality.Optical tilt charge devices has quantal size region (being generally one or more quantum well) in its base region.In transistorized base stage, add quantum well and not only introduce another element or defect to assist restructuring, but also introduce can stored charge, the structure of lateral transfer and charge carrier that thermalization is again caught.In addition, the in the situation that of significantly lower electricity gain (higher base current ratio), the problem that is associated with base stage electrical sheet resistance (heating, emitter-base bandgap grading collection limit) and being exaggerated with the problem (reliability) of base current density dependent connection, and the importance of base stage transit time (the large problem in the design of HBT) reduces because of the concern on the lateral resistance under low emitter current density and emitter-base bandgap grading collection limit.In the time of design high speed optical inclination charge devices, optics extraction, beam shape and optical power output can be equally important with electricity gain and the electric bandwidth of described device.Design rule that even HBT community is successfully followed (can increase by reducing continuously the size of base stage-emitter-base bandgap grading knot and base-collector junction the speed of HBT) cannot be used for tilting electric charge optical transmitting set, and this is to reduce to cause more and more less radiation recombination efficiency because of physical size for this reason.Therefore, should be understood that the design rule that is suitable for pure electric I/O inclination charge devices may not be suitable for the optimizing device that also needs optics to export.
Similarly, high speed optical inclination charge devices and charge storage optical transmitting set (, diode laser or light-emitting diode) are shared few Joint Designing speciality.For instance, although both all use the structure of for example quantum well, but the design rule of optics charge storage devices need to make the limitation of charge carrier or storage maximize (with improve wherein the charge carrier of being caught " waits " excited by photon field or the possibility of the emission process that is stimulated of recombinating by spontaneous emission) method, and the minimizing of the design rule of the optical tilt charge devices needs charge carrier of storing.The design rule extracting for light even using in charge storage devices retrains (different geometries) and the high-speed applications compatibility of high-speed interconnect part (for example, with) and is not applicable to simply charge devices because forcing at the physical Design of inclination charge devices.
Therefore, the design of optical tilt charge devices is considered not about finding for the design rule of HBT and for the balance between the design rule of diode optical transmitting set; In other words, not about device described in decision-making should be more as HBT still as diode optical transmitting set.But, for the design model of the electric charge light-emitting device that tilts should depend on specific charge dynamically, geometry, optical characteristics and the unique application of device.As disclosed, aspect of the present invention relates to and reducing and the base surface non-radiative restructuring being associated of recombinating.Another aspect of the present invention relates to the lateral transfer of the electronics in quantum well and is not intended to reducing of base charge electric capacity that limitation is associated.
Together with the thin base layer thickness between quantum well (QW) and base surface (" base stage 1 " region) (for example, being less than the layer thickness of approximately 300 dusts) use together QW in heterojunction bipolar transistor (HBT) introduce charge carrier from described quantum well be tunnelled to wherein said charge carrier non-radiative problem the surface state of recombinating.Previously disclosed use asymmetric base region as the institute's trapped electrons for reducing QW the technology (referring to US2010/0202484 U.S. Patent Application Publication case) towards surperficial thermalization.This contributes to reduce non-radiative restructuring, and thermalization is preferably towards collector electrode again due to electronics, and therefore it also assists the lateral transfer that reduces electronics.Also recombinating in order to reduce surface compared with large band gap region of asymmetric base region.
Principle according to aspects of the present invention, in the time that needs make base stage 1 area thickness remain about 300 dusts or be less than 300 dust, comprise (for instance) thickness preferably between about 15nm to the low-doped (1E-16cm between 50nm
-3to 5E-17cm
-3) or the tunnel barrier structure of wearing that is not intended to the N-shaped layer structure of doping can be used for increasing from quantum well to surperficial space length, whereby in the case of needn't physically increase the p-type base region between quantum well and emitter region, reduce in quantum well the charge carrier of catching to the tunnel of wearing of surface state.Describedly wear tunnel barrier structure material and should preferably there is the energy gap of the basic status that is greater than quantum well, and should optionally remove by will not affecting the etch process in base stage 1 region.For base stage 1 region of AlGaAs layer that comprises GaAs or low percentage Al (< 20%), wear that tunnel potential barrier can be made up of the AlGaAs of relative higher percent Al (> 35%) (for instance) or for Lattice Matching or be strain InAlGaP alloy-layer.
Also can adopt the asymmetric base stage with more and more higher energy barrier to design to increase to wear tunnel barrier height together with ledge as described above (ledge), produce towards the charge carrier of collector electrode again thermalization priority condition and increase barrier height, this also reduces wears tunnel.
According to form of the present invention, state a kind of for the method to produce optical signalling through improving efficiency, described method comprises following steps: laminar semiconductor structure is provided, semiconductor collector region that described laminar semiconductor structure comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described collector region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region; At least one region that represents quantal size effect is provided in described base region; Collector electrode, base electrode and emitter-base bandgap grading electrode with described collector region, described base region and the coupling of described emitter region are provided respectively; Above at least institute expose portion on the described surface of described base region, provide and wear tunnel barrier layer; And apply signal with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode to produce optical signalling from described base region.In the embodiment of this form of the present invention, provide the step of described electrode to comprise: at least a portion of described base electrode is provided as on the described surface that is placed in described base region and spaced apart with described emitter-base bandgap grading table top, and described in tunnel barrier layer is provided described in providing step comprise: described in providing, wear tunnel barrier layer between described table top and described base electrode on the described surface of described base region.In this embodiment, described in, provide the step in described at least one region that represents quantal size effect to comprise discontinuous or on-plane surface quantal size region is provided; , quantum dot and/or quantum wire (discontinuous) or corrugated quantum well (on-plane surface).Also in this embodiment, the described step that described base region is provided comprises: provide the base region of the second base stage subregion in the collector electrode side in the first base stage subregion in the emitter-base bandgap grading side that comprises described quantal size region and described quantal size region, and described the first base stage subregion and described the second base stage subregion relative to each other possess asymmetric band structure.
According to another form of the present invention, state a kind of method for generation of inclination electric charge light-emitting device, described method comprises following steps: form laminar semiconductor structure, the sub-base region of second half conductor of the semiconductor collector region that described laminar semiconductor structure comprises substrate, the first conduction type, the semiconductor sublayer base region of the second conduction type, quantal size region and described the second conduction type; On described another sub-base region, deposition is worn tunnel barrier layer; In a surperficial part for described barrier layer, form the semiconductor emitter-base bandgap grading table top of described the first conduction type; And provide respectively and collector electrode, base electrode and the emitter-base bandgap grading electrode of described collector region, described base region and the coupling of described emitter region.In the embodiment of this form of the present invention, above the surperficial non-periphery of described another sub-base region, deposit described barrier layer, and the step of the described base electrode of described formation comprises: on the periphery of described another sub-base region, form and the isolated described base electrode of described emitter-base bandgap grading table top.Also in this embodiment, the step of the described base stage subregion of described formation and described another base stage subregion comprises: form as relative to each other have asymmetric band structure as described in base stage subregion and as described in another base stage subregion.This described another base stage subregion that can have a semi-conducting material of the band gap higher than the semi-conducting material of described sub-base region by formation is implemented.In the embodiment of this form of the present invention, described another base stage subregion is formed with the thickness that is less than about 30nm.
According to another form of the present invention, state a kind of inclination electric charge light-emitting semiconductor device, described inclination electric charge light-emitting semiconductor device comprises: laminar semiconductor structure, its semiconductor collector region that comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described collector region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region; Described base region, it comprises at least one region that represents quantal size effect; Collector electrode, base electrode and emitter-base bandgap grading electrode, it is coupled with described collector region, described base region and described emitter region respectively; And wear tunnel barrier layer, it is placed at least institute expose portion top on the described surface of described base region; Whereby, the signal applying with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode can produce optical signalling from described base region.In the embodiment of this form of the present invention, at least a portion of described base electrode is placed on the described surface of described base region and is spaced apart with described emitter-base bandgap grading table top, and described in wear tunnel barrier layer and be placed on the described surface of described base region between described table top and described base electrode.In the embodiment of this form of the present invention, described at least one region that represents quantal size effect comprises discontinuous or on-plane surface quantal size region.
According to another form of the present invention, state a kind of for the method to produce optical signalling through improving efficiency, described method comprises following steps: laminar semiconductor structure is provided, semiconductor drain region that described laminar semiconductor structure comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described drain region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region; At least one region that represents quantal size effect is provided in described base region; Base stage/the drain electrode being coupled with described base region and described drain region is provided, and the emitter-base bandgap grading electrode being coupled with described emitter region is provided; Above at least institute expose portion on the described surface of described base region, provide and wear tunnel barrier layer; And apply signal with respect to described base stage/drain electrode and described emitter-base bandgap grading electrode to produce optical signalling from described base region.In the embodiment of this form of the present invention, the described step that described electrode is provided comprises: at least a portion of described base stage/drain electrode is provided as on the described surface that is placed in described base region and spaced apart with described emitter-base bandgap grading table top, and the step that tunnel barrier layer is provided described in wherein said providing comprises: described in providing, wear tunnel barrier layer on the described surface of described base region between described table top and described base stage/drain electrode.
The design of actual optical tilt charge devices comprises several complicated Considerations, the realization that it comprises high internal quantum, manufacturability, compatibility and reliability.Therefore, challenge from the existing transformation that is designed into another design of optical tilt charge devices.According to a further aspect in the invention, provide one to there is deep quantum well (wherein at least about 0.25eV Δ E > > kT) and maintain the optical tilt charge devices of the heavy doping base region of binary in fact simultaneously.The described optical tilt charge devices with these features still can be incorporated to the etching stopping layer optionally stopping etching at the semi-conducting material place of a type to assist defining of emitter-base bandgap grading table top, base stage table top and collector electrode table top, and this is of value to manufacturability.In addition, for reliability reasons, described base region still can be doped with carbon (p-type, NPN structure) or silicon (N-shaped, PNP).Remain compatible, this is because the transmitting photon energy of optical tilt charge devices still can be coupled to the existing photoelectric detector based on InP/InGaAs.Another advantage is the optical tilt charge devices of announcement of the present invention based on GaAs and the substrate based on silicon and the use compatibility of lens.
According to another form of the present invention, provide a kind of for making the method for the optical tilt charge devices of mating in fact with GaAs lattice constant, described method comprises following steps: laminar semiconductor structure is provided, and described laminar semiconductor structure comprises: GaAs substrate; Semiconductor collector region; Semiconductor base region, it comprises through Doped GaAs the second base stage subregion, InGaAsN quantal size region and through Doped GaAs the first base stage subregion; And semiconductor emitter region; And provide respectively and collector electrode, base electrode and the emitter-base bandgap grading electrode of described collector region, described base region and the coupling of described emitter region.The signal of telecommunication applying with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode produces light transmitting from described base region.In the embodiment of this form of the present invention, provide the step of described collector region and described emitter region to comprise: described region is provided as to GaAs in fact, and provide the step of described the second base stage subregion and described the first base stage subregion to comprise: described the second base stage subregion and described the first base stage subregion are provided as to heavy doping p-type (wherein, as used herein, heavy doping means to be at least about 10 for p-type
18cm
-3and be 10 for N-shaped
17cm
-3).Also in this embodiment, provide the step in described InGaAsN quantal size region to be included in InGaAsN quantum well is provided between GaAs barrier layer.Or, described in provide the step in described InGaAsN quantal size region that the multiple InGaAsN quantum well that provide between each comfortable GaAs barrier layer can be provided.Also in this embodiment, described method comprises by the described laminar semiconductor structure of growing for the intervention InAlGaP alloy etch stop-layer that defines base stage table top and emitter-base bandgap grading table top with the etchant that optionally removes the material based on arsenide.(also comprising the use of InGaP or InAlAs etching stopping layer for the InAlGaP alloy of this etch stop application).In the form of this embodiment, on Si, on GaAs substrate, deposit described laminar semiconductor structure, and form Si lens from described substrate.
In another form of the present invention, state a kind of for making the method for the two-terminal optical tilt charge devices of mating in fact with GaAs lattice constant, described method comprises following steps: laminar semiconductor structure is provided, and described laminar semiconductor structure comprises: GaAs substrate; Semiconductor drain region; Semiconductor base region, it comprises through Doped GaAs the second base stage subregion, InGaAsN quantal size region and through Doped GaAs the first base stage subregion; And semiconductor emitter region; And provide and the base stage/collector electrode of described collector region and the coupling of described base region and the emitter-base bandgap grading electrode being coupled with described emitter region.The signal of telecommunication applying with respect to described base stage/drain electrode and described emitter-base bandgap grading electrode produces light transmitting from described base region.
In another form of the present invention, state a kind of optical tilt charge devices of mating in fact with GaAs lattice constant, described optical tilt charge devices comprises: laminar semiconductor structure, it comprises: GaAs substrate; Semiconductor collector region; Semiconductor base region, it comprises heavy doping GaAs the second base stage subregion, InGaAsN quantal size region and heavy doping GaAs the first base stage subregion; And semiconductor emitter region; Described collector region and described emitter region have the conduction type with the conductivity type opposite of described base stage subregion; And collector electrode, base electrode and emitter-base bandgap grading electrode, it is coupled with described collector region, described base region and described emitter region respectively; To produce light transmitting from described base region with respect to the applying of the signal of telecommunication of described collector electrode, described base electrode and described emitter-base bandgap grading electrode whereby.In the embodiment of this form of the present invention, the described InGaAsN quantal size region in described base region comprises the quantum well having at least about the degree of depth of 0.25eV.In this embodiment, described InGaAsN quantal size region is included in the InGaAsN quantum well between GaAs barrier layer.Preferably, described InGaAsN quantal size region comprises In
xga
1-xasN, wherein x is at least about 0.3.Also in this embodiment, described GaAs substrate is placed on silicon, and described silicon is the form of lens.
When together with accompanying drawing, will be easier to understand further feature of the present invention and advantage according to following detailed description in detail.
Brief description of the drawings
Fig. 1 is according to the cross-sectional view of the optical tilt charge devices of embodiments of the invention and the form that is lighting transistor that can use in the embodiment that puts into practice method of the present invention.
Fig. 2 is the table of the exploded view 1 wherein quantum well of installing at the surperficial epitaxial layer structure of wearing the example in tunnel distance to base stage.What use had a material identical with emitter-base bandgap grading wears tunnel potential barrier.Asymmetric base stage is for helping thermalization again and the increase barrier height towards collector electrode.Inclination charge devices epitaxial loayer through design with HBT casting technique compatibility.
Fig. 3 is the table of showing the treated device DC characteristic of the device of making by the structure of Fig. 1 and 2.
Fig. 4 is the chart of the light output that becomes with the base current of the device for Fig. 1 and 2.Distance between emitter-base bandgap grading mesa edge and base metal edge changes to 7 μ m and makes all other sizes keep identical from 1.5 μ m.Increase apart from d and increase equivalently base resistance (hole resistance) and therefore promote electronics in (comparison) quantum well lateral transfer towards base contact.Light is measured with large area detector via base substrate and relative base current (recombination current) and marking and drawing.Measured data display radiation recombination efficiency in the time of change of distance does not change, as shown in Figure 4, wherein for four of the distance d in from 1.5 μ m to the scope of 7 μ m the curve of marking and drawing overlapping in fact and seem to be single curve.
Fig. 5 marks and draws capacitor C
dthe adjust the distance chart of d.AC analyzes instruction in the time changing to 7um apart from d from 1.5um, and the electric capacity (, charge storage capacitance, diffusion capacitance) being associated with electronic Dynamic increases.In the time only changing lateral dimension (d), this instruction capacity area, because electronics is via lateral rows and then the increase of QW, is therefore filled described quantum well compare great district.
Fig. 6 is the cross-sectional view (wherein similar components symbol represents like) that is similar to another optical tilt charge devices of the device of Fig. 1, but wherein installs base region and have in described base region the discontinuous quantity minor structure of the form that is quantum dot.
Fig. 7 is the table of showing the epitaxial layer structure of device according to another embodiment of the present invention.Asymmetric base stage and discontinuous quantity minor structure are incorporated in described design.Help the thermalization again towards collector electrode.
Fig. 8 is the table of showing the epitaxial layer structure of device according to another embodiment of the present invention, wherein adopts corrugated quantum well.
Fig. 9 is the table of showing the epitaxial layer structure of device according to another embodiment of the present invention, wherein uses narrow quantum well in conjunction with discontinuous quantity minor structure.
Figure 10 is according to another embodiment of the present invention and the cross-sectional view of the optical tilt charge devices of the form that is lighting transistor that can use in another embodiment that puts into practice method of the present invention.
Figure 11 is the table of showing the epitaxial layer structure of the example of Figure 10 embodiment of the present invention.
Figure 12 is the table of showing the epitaxial layer structure of device according to another embodiment of the present invention.
Figure 13 is according to another embodiment of the present invention and the cross-sectional view of another optical tilt charge devices of the form that is two-terminal inclination electric charge light-emitting diode that can use in another embodiment that puts into practice method of the present invention.
Embodiment
With reference to figure 1, it is shown according to the cross-sectional view of the optical tilt charge devices of embodiments of the invention and the form that is lighting transistor that can use in the embodiment that puts into practice method of the present invention.In Fig. 1, electron collector region 125 is placed on undoped substrate 110.Table top on electron collector 125 comprises and is placed in collector region 130 and is formed at the base region 140 between the emitter region 160 on another table top.Described base region is included in one or more quantum well 145 between top base region (base stage 1) and bottom base region (base stage 2).In this embodiment, the surface of collector electrode 127 contact shoe collector regions 125, base electrode 147 contacts the surface of base region 140, and emitter-base bandgap grading electrode 167 contacts the surface of emitter region 160.Wear top surface top that tunnel barrier layer 150 is placed in base region 140 between described base region and emitter region 160, thereby cover especially surperficial institute's expose portion of described base region.
The example of the representative epitaxial layer structure of the embodiment of the table exploded view 1 of Fig. 2.Unless otherwise directed, otherwise can use existing MOCVD (metal organic chemical vapor deposition) and/or MBE (molecular beam epitaxy) deposition technique to make epitaxial layer structure, and form device by existing optical lithography techniques.In this example, in GaAs potential barrier, there are two In
0.2ga
0.8as quantum well (layer 7 and 9).Top quantum well (layer 9) wearing in tunnel distance (24um) on the surface (, the surface of base stage 1-layer 12) to base stage 140.In this example, use there is the material identical with emitter-base bandgap grading 160 (layer 14) wear tunnel potential barrier 150 (layer 13); Be In
0.49ga
0.51as.Asymmetric base stage is for helping thermalization again and the increase barrier height towards collector electrode.Wear tunnel barrier structure and increase charge carrier in quantum well to the distance between surface state (and reducing to wear tunnel possibility).In the situation that not having the tunnel of wearing potential barrier, as indicated, the tunnel distance of wearing between quantum well and surface state is 24nm.In the situation that having the tunnel of wearing potential barrier, this distance is increased to 78nm (about 3 times).Also can reduce to wear tunnel possibility by the thickness of the layer 11 and 12 (base stages 1) of increase epitaxial structure.The use of wearing tunnel potential barrier allows not need the design (for example,, for base stage transit time reason or material cause) in thick base stage 1 region.In described table (and other table of the present invention), the 3rd row comprise (for some layer) title " ELDL ", and its representative is for the optional use of the long diffusion length material of engineering of these layers.At this point, can be with reference to the U.S. Patent Application Publication case US2012/006815 of the use of this type of material of description.But, will understand, the present invention does not need to use this optional material.The 3rd row of table of the present invention are also enumerated the characteristic emission wavelength being associated with material system and quantal size region.
In Fig. 1, the instruction of photon (waveform) arrow can be extracted available light from top or from bottom side.In this embodiment, base contact (Ti-Pt-Au) is made for to layer 12, emitter-base bandgap grading contact (Au-Ge) is made for to layer 15, and collector driving point (Au-Ge) is made for to layer 1.For example tie, in forward bias (, V at base stage-emitter-base bandgap grading
bE1.2 volts of >) in and base-collector junction in high impedance mode (may not reverse bias-for example ,-2.5 volts of < V
bc0.5 volt of <) in situation under operate described device.Illustrating charge carrier by solid arrow moves.
In the present embodiment, be same as or be similar to emitter-base bandgap grading owing to wearing the material of tunnel potential barrier, therefore in the situation that there is emitter-base bandgap grading, always effectively wear tunnel potential barrier thickness larger.If needed, can allow to separate described layer for emitter-base bandgap grading and the use of wearing the non-similar material of tunnel potential barrier (for instance, AlGaAs emitter-base bandgap grading and InAlGaP wear tunnel potential barrier) during processing so.
In the present embodiment, use thin 21nm to increase barrier height and help the thermalization again towards collector electrode through doped with Al GaAs hierarchical classification (layer 11 and 12, wherein Al content is 0.5% to 5%).Add 3nm undoped GaAs resilient coating (layer 10) to reduce dopant to the pollution in quantum well.Inclination charge devices epitaxial loayer through design with HBT casting technique compatibility.In the table of Fig. 3, show treated device DC characteristic.Made device grinding, to 150 μ m, and is measured it.
To making distance (the effect execution research that the distance in Fig. 1 d) changes between base contact and emitter-base bandgap grading table top.Distance between emitter-base bandgap grading mesa edge and base metal edge changes to 7 μ m and makes all other sizes keep identical from 1.5 μ m.Increase apart from d and increase equivalently base resistance (hole resistance) and therefore promote electronics in (comparison) quantum well lateral transfer towards base contact.Light is measured with large area detector via base substrate and relative base current (recombination current) and marking and drawing.Measured data display is when distance is not changing from approximately 1.5 μ m radiation recombination efficiency when changing 7 μ m.This is visible in Fig. 4, wherein for four of the distance d in from 1.5 μ m to the scope of 7 μ m the curve of marking and drawing overlapping in fact and seem to be single curve.This instruction relates to use and describes the technology of the present invention of wearing tunnel potential barrier successfully by the institute's trapped electrons in quantum well and the restructuring isolation of non-radiative surface.Surface is to the also auxiliary focus (being the problem of amplifying in its low current gain transistor at for example lighting transistor) that can cause the leakage of base stage-emitter-base bandgap grading and integrity problem in surface formation that reduces of the restriction of non-radiative restructuring.
But the electric charge in other research instruction QW is preserved and is caused the capacitor C relevant with electronic Dynamic because of previous described technology
dthe increase of (, base stage institute storage capacitance, diffusion capacitance).From Fig. 5, (it marks and draws capacitor C for this
dthe chart of adjusting the distance d) is visible.AC analyzes instruction in the time changing to 7um apart from d from 1.5um, and the electric capacity (, charge storage capacitance, diffusion capacitance) being associated with electronic Dynamic increases.In the time only changing lateral dimension (d), this instruction capacity area, because electronics is via lateral rows and then the increase of quantum well, is therefore filled quantum well compare great district.
Expect to reduce therein C
dapplication in, embodiments of the invention utilize discontinuous quantity minor structure (DQS) as the quantal size region in the base region of device.The DQS of for example quantum dot or quantum wire transversely axle provides energy gap discontinuity.Physics discontinuity and the energy gap discontinuity (energy barrier) that is associated are limited to the Mobile Office of caught charge carrier or stop in the border of discontinuous quantity minor structure.This is shown to (wherein similar components symbol represents like) although graphic extension is similar in Fig. 6 of device of the device of Fig. 1, wherein install base region (being denoted as 140 ') and have the discontinuous quantity minor structure of the form that is quantum dot 645 in described base region.Can the growing period of epitaxial loayer (referring to the table of Fig. 7) or by patterning quantum structure then for regrowth method is incorporated to described DQS structure.
As represented in the table of Fig. 7, use thin N-shaped InGaAs layer (being less than 100nm) to make it possible to use compared with the alloy contact of for example AuGe non-alloy contact more level and smooth on optics.Gained will improve by downward reflection photon from the light extraction of the bottom of substrate compared with level and smooth contact layer.For the design of Fig. 6 embodiment of wherein only expecting bottom emission, can reduce or eliminate (for example, passing through Alignment Method) and expose emitter-base bandgap grading mesa width (W) to make covering whole emitter-base bandgap grading mesa width so that increase bottom light is extracted by the non-alloy contact of reflection.The thickness of InGaAs layer is preferably enough thin to reduce photon self-absorption, but enough thick in to make it possible to use nonmetal contact.
Seen in the table of Fig. 7, asymmetric D QS is incorporated in described design to help the thermalization again towards collector electrode.As indicated above, replace quantum dot, also can use other DQS of for example quantum wire.The sub-emitter layer of InGaAs of the tellurium doping of use relative thin is to make Ti-Pt-Au contact can be used in emitter-base bandgap grading.Compared with Au-Ge alloy contact, Ti-Pt-Au provides better reflectivity and the photonic absorption of offsetting by due to the sub-emitter layer of use low band gaps InGaAs is lost.
In Fig. 6 embodiment, as indicated, prevent the lateral transfer of electronics towards base contact by discontinuous quantity minor structure.Edge restructuring program in this figure is edge reconstruction unit through expanding with instruction inclination charge devices.Will be apparent, " evenly " restructuring that can finally obtain below emitter-base bandgap grading table top by reduction emitter-base bandgap grading mesa dimensions distributes.The instruction of photon arrow can be extracted available light from top or from bottom side.Base contact (Ti-Pt-Au) is made for to layer 13, emitter-base bandgap grading contact (Ti-Pt-Au) is made for to layer 18, and collector driving point (Au-Ge) is made for to layer 1 (with reference to the table of figure 7).As described in, use the sub-emitter layer of InGaAs (layer 17 and 18) of the tellurium doping of relative thin to make Ti-Pt-Au contact can be used in emitter-base bandgap grading.The better reflectivity of the relative Au-Ge alloy contact of Ti-Pt-Au is lost the photonic absorption of offsetting by due to the sub-emitter layer of use low band gaps InGaAs.As in Fig. 1 embodiment, at base stage-emitter-base bandgap grading knot in forward bias and base-collector junction operate described device in high impedance mode (may not reverse bias) in the situation that.Also part DBR or whole DBR chamber can be incorporated in this structure.Also can this embodiment and other embodiments of the invention be operating as to laser by applicable resonant optical mode chamber is provided.
In another embodiment of the present invention, by using single or multiple height strains corrugated (on-plane surface) quantum well (C-QW) (for instance, InGaAs QW in InGaP/GaAs LET, wherein indium compositions is approximately more than 20%) reduce the cross conduction of minority carrier, wherein quantum well width is defined as the distance between two potential barriers of basic defrag status of limitation quantum well.Can use the methods such as such as SIMS (secondary ion mass spectrometry) analysis, AFM (atomic force microscopy), FIB (focused beam) or high-resolution TEM (transmission electron microscope) to check indium compositions and the ripple of quantum well.Height strain surface causes the growth on on-plane surface (corrugated) QW surface.(for instance, can be with reference to T clock (T.Chung), G Walter (G.Walter) and the little Huo Longyake (N.Holonyak of N, Jr.) InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure laser improve (" Coupled Strained Layer InGaAs Quantum Well Improvement of an InAs Quantum Dot AlGaAs-GaAs-InGaAs-InAs Heterostructure Laser ") through coupling strained layer InGaAs quantum well, Applied Physics journal 79,4500-4502 (2001); G Walter (G.Walter), T clock (T.Chung) and the little Huo Longyake (N.Holonyak of N, Jr.) high-gain is through coupling InGaAs quantum well InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure diode laser operation (" High Gain Coupled InGaAs Quantum Well InAs Quantum Dot AlGaAs-GaAs-InGaAs-InAs Heterostructure Diode Laser Operation "), Applied Physics journal 80,1126-1128 (2002); G Walter (G.Walter), T clock (T.Chung) and the little Huo Longyake (N.Holonyak of N, Jr.) through coupling bar shaped quantum well auxiliary AlGaAs-GaAs-InGaAs-InAs quantum dot laser (" Coupled-Stripe Quantum-Well-Assisted AlGaAs-GaAs-InGaAs-InAs Quantum-Dot Laser "), Applied Physics journal 80,3045 (2002)).Can be by using from the bottom of axle bush or pre-patterned substrate (selectivity crystrallographic plane for instance) or strengthen the growth of corrugated QW by optical lithography/etch process.Corrugated or non-planar surfaces provides the light wave and the disturbance of electric wave function that make carrier mobility distortion.
The epitaxial layer structure of stating in the table of Fig. 8 is the embodiment that embeds the inclination charge devices that has the main emission peak that is designed to about 1020nm for corrugated quantum well (C-QW) wherein.Can use 1020nm emission peak optical transmitting set together with high OH (UV/VIS) optical fiber.(alternatively can adopt the design for other emission wavelength).Use in this embodiment asymmetric C-QW to help wearing tunnel distance towards thermalization again and the increase of collector electrode.If needed, can in the situation that needn't reducing indium compositions, increase so aluminum composition in layers 6,10 and/or 11 with by emission wavelength from 1020nm be decreased to (such as) 1000nm.
In another embodiment (showing the epitaxial layer structure of described embodiment in the table of Fig. 9), use narrow quantum well (plane QW or C-QW) so that the Material growth through improving carrier capture ability and auxiliary DQS to be provided in conjunction with DQS.As stated in Fig. 9, inclination charge devices comprises thin plate quantum well (QW), and described thin plate quantum well is via 5 individual layers (ML) DQS that wears tunnel potential barrier and be coupled to and have through being designed to approximately the main emission peak of (but may not) 1020nm.Described quantum well can be through design to have the peak emission wavelength of 1020nm (approximately identical energy) or 980nm (approximately higher-energy).Can use 1020nm emission peak optical transmitting set together with high OH optical fiber.In this design, use asymmetric D QS to help wearing tunnel distance towards thermalization again and the increase of collector electrode.
In the two-terminal inclination electric charge light-emitting diode of the general type disclosing in another embodiment,, adopt feature of the present invention in US2010/0202483 U.S. Patent Application Publication case or US2012/0068151 U.S. Patent Application Publication case.In this device, make the structural change of Fig. 1 embodiment or Fig. 6 embodiment, wherein the Region specification of base region below is drain region, and peripheral base stage/drain electrode and base region and drain region coupling.As previously providing the base region that comprises at least one preferably discontinuous or corrugated quantal size region in explanation, and emitter-base bandgap grading table top and emitter-base bandgap grading contact also can be corresponding in fact with previous explanation.As described above, advantageously above institute's expose portion of base region, provide and wear tunnel barrier layer.
Figure 10 shows according to another embodiment of the present invention and the device that can use in another embodiment that puts into practice method of the present invention.Semiconductor layering demonstrated in Figure 10 upwards comprises from bottom: GaAs substrate 1110; GaAs buffer area 1120; Electron collector region 1130; Collector region 1140; Base region 1160, its comprise be called " base stage-2 " base stage subregion 1162, quantal size region 1150 (other applicable quantum size area of one or more quantum well or for example quantum dot or quantum wire), be called the base stage subregion 1167 of " base stage-1 "; Emitter region 1170; And sub-emitter region 1180.According to feature of the present invention, in described base region, visit with InGaAsN quantal size region.Described collector electrode, described base electrode and described emitter-base bandgap grading electrode are shown as respectively metal collector contact 1135 (it contacts described electron collector region), metal-base contact 1165 (it contacts region, described base stage-1) and metal emitter-base bandgap grading contact 1185 (it contacts described sub-emitter region).Collimater or condenser lens 1105 can be molded into or attach to GaAs substrate 1110.Collimater or lens 1105 can advantageously be formed by silicon.In the time that described device grows on the upper GaAs substrate of Si, can form described lens by silicon described in etching.Although show bottom light reflector, described device can be also top emitters through configuration.
The table of Figure 11 is shown the more detailed semiconductor epitaxial layers of the example of Figure 10 embodiment.Can use existing MOCVD (metal organic chemical vapor deposition) and/or MBE (molecular beam epitaxy) deposition technique to make epitaxial layer structure, and use existing optical lithography techniques to form device.Base stage-2 district inclusion p-type GaAs layer (layer 6), then for more low-doped p-type GaAs material (layer 7) is to complete region, base stage-2.Reduce dopant to reduce dopant to the diffusion in quantum well region being close to quantum well place.Dopant for p-type base region is preferably carbon, for example, compares with most of other p-type dopant (, zinc), and carbon has the loose afterbody of relatively steep sudden expansion.Then, comprise the quantum well structure that is not intended to Doped GaAs layer (layer 8) through growing to form the first barrier layer, then for GaAs in fact thin (the approximately 120A) of Lattice Matching compared with low band gaps InGaAsN layer (layer 9), and then with as another thin GaAs layer (layer 10) of the second barrier layer complete.Alternatively can repeat InGaAsN layer and GaAs barrier layer is implemented multiple quantum well structures by use, as shown in the table of Figure 12.Then base stage-1 structure that comprises more low-doped p-type GaAs layer (layer 11) and higher-doped GaAs contact layer (layer 12) by growth completes the effect base region of described device.Layer 14 is shown as in table has (for example) for the possibility that uses the index step of lateral oxidation or the aluminium content of limitation.
The InGaAsN semi-conducting material that is advantageously used in quantum well of the present invention is a kind of quaternary material, and the less nitrogen-atoms of described quaternary materials'use compensates the strain of being brought out by larger phosphide atom, thereby allows described material to keep mating in fact with GaAs lattice constant.Thereby this energy gap that allows higher indium to be incorporated to reduce InGaAsN layer produces compared with deep quantum well, and needn't increase the energy gap of barrier layer, this need to rely on ternary composition.
Use InGaAsN material also to allow to have the design of the device of the emission peak (described emission peak has the relatively high transmission through silicon) of being longer than 1100nm for quantum well.This allows optical tilt charge devices to be advantageously coupled to high index silicon lens (as in Figure 10).Due to whole OTCD structure and GaAs lattice constant Lattice Matching in fact, and emission wavelength can be through finishing to make it possible to use silicon lens, and therefore the device that discloses can be directly grown on the upper GaAs substrate of Si, and from Si etching lens.In addition,, for GaAs substrate, replacement scheme is etching lens in GaAs.
In the present embodiment, InAlGaP alloy (for example, In low-doped and that mate in fact with GaAs lattice constant
0.49ga
0.51p) etching stopping layer is positioned in layer 1,4 and 13, and described layer also defines border between Ji Jing doped buffer region, border and the undoped buffering area of base stage contact layer (layer 13), collector contact layer (layer 3) (layer 1).Useful layer 1 is by allowing to remove all electrically conductive materials and therefore a device being adjoined to device electrolysis coupling from another and assist GaAs substrate removal or device isolation.These materials (for example, InGaP or InAlGaP) based on phosphide are with respect to for example, being stable for the etchant that removes the material (, GaAs and InGaAs) based on arsenide.Similarly, can remove the material based on phosphide with the etchant of the material settling out to based on arsenide.Therefore, can in the situation that not affecting arsenide material, remove the material based on phosphide, and vice versa.Also part DBR or whole DBR chamber can be incorporated in this structure.Also can this embodiment and other embodiments of the invention be operating as to laser by applicable resonant optical mode chamber is provided.
In the two-terminal inclination electric charge light-emitting diode of the general type disclosing in another embodiment,, adopt feature of the present invention in US2010/0202483 U.S. Patent Application Publication case or US2012/0068151 U.S. Patent Application Publication case.In this device, make the structural change of Figure 10 embodiment, wherein the Region specification of base region below is drain region, and peripheral base stage/drain electrode and described base region and the coupling of described drain region.In Figure 13, show an example, wherein lens 1105, substrate 1110, buffer area 1120, region, base stage-1 1162, quantal size region 1150, region, base stage-2 1167, emitter region 1170, sub-emitter region 1180 and emitter-base bandgap grading contact 1185 are similar to the element with similar components symbol in Figure 10.But, replacing electron collector region and collector region, Figure 13 device has sub-drain region 1430 and drain region 1440.In addition, replace base electrode and drain electrode, the device of this embodiment has base stage/drain electrode 1465.Described in the Patent Application Publication case of above being quoted, the signal of telecommunication is applied to described base stage/drain electrode and described emitter-base bandgap grading electrode and produces light transmitting from described base region.The inclination electric charge light-emitting diode of this embodiment has making and the service advantages identical with the three terminal optical tilt charge devices of Figure 10 embodiment.
Although describe the present invention with reference to certain preferred embodiment, those skilled in the art is by the version of expecting in spirit of the present invention and scope.For instance, although described npn lighting transistor, will understand, certain principles of the present invention will be equally applicable to pnp lighting transistor.
Claims (29)
1. for the method to produce optical signalling through improving efficiency, it comprises the following steps:
Laminar semiconductor structure is provided, semiconductor collector region that described laminar semiconductor structure comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described collector region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region;
At least one region that represents quantal size effect is provided in described base region;
Collector electrode, base electrode and emitter-base bandgap grading electrode with described collector region, described base region and the coupling of described emitter region are provided respectively;
Above at least institute expose portion on the described surface of described base region, provide and wear tunnel barrier layer; And
Apply signal with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode to produce optical signalling from described base region.
2. method according to claim 1, the wherein said step that described electrode is provided comprises: at least a portion of described base electrode is provided as on the described surface that is placed in described base region and spaced apart with described emitter-base bandgap grading table top, and the step that tunnel barrier layer is provided described in wherein said providing comprises: described in providing, wear tunnel barrier layer on the described surface of described base region between described table top and described base electrode.
3. method according to claim 1 and 2, the wherein said step that described at least one region that represents quantal size effect is provided comprises provides discontinuous or on-plane surface quantal size region.
4. method according to claim 3, wherein saidly provides described step discontinuous or on-plane surface quantal size region to comprise to provide quantum dot and/or quantum wire region.
5. method according to claim 3, wherein saidly provides described step discontinuous or on-plane surface quantal size region to comprise to provide corrugated quantum well.
6. method according to claim 1 and 2, the wherein said step that described base region is provided comprises provides the base region that comprises in fact GaAs and AlGaAs, and described in tunnel potential barrier is provided described in providing step comprise providing and comprise that InGaP's wears tunnel potential barrier.
7. method according to claim 1 and 2, the wherein said step that described base region is provided comprises: the base region that the second base stage subregion in the collector electrode side in the first base stage subregion in the emitter-base bandgap grading side that comprises described quantal size region and described quantal size region is provided; And provide described the first base stage subregion and the described second base stage subregion relative to each other with asymmetric band structure.
8. method according to claim 1 and 2, it further comprises: described base region is placed in optical resonator, and wherein said optical signalling is laser signal.
9. for generation of a method for inclination electric charge light-emitting device, said method comprising the steps of:
Form laminar semiconductor structure, the sub-base region of second half conductor of the semiconductor collector region that described laminar semiconductor structure comprises substrate, the first conduction type, the semiconductor sublayer base region of the second conduction type, quantal size region and described the second conduction type;
On described another sub-base region, deposition is worn tunnel barrier layer;
In a surperficial part for described barrier layer, form the semiconductor emitter-base bandgap grading table top of described the first conduction type; And
Collector electrode, base electrode and emitter-base bandgap grading electrode with described collector region, described base region and the coupling of described emitter region are provided respectively.
10. method according to claim 9, wherein above the surperficial non-periphery of described another sub-base region, deposit described barrier layer, and the step of the described base electrode of wherein said formation comprises: on the periphery of described another sub-base region, form and the isolated described base electrode of described emitter-base bandgap grading table top.
11. according to the method described in claim 9 or 10, and the step in the described quantal size of wherein said formation region comprises the discontinuous or on-plane surface quantal size region of formation.
12. methods according to claim 9, wherein said another base stage subregion is formed with the thickness that is less than about 30nm.
13. 1 kinds of inclination electric charge light-emitting semiconductor devices, it comprises:
Laminar semiconductor structure, its semiconductor collector region that comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described collector region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region;
Described base region, it comprises at least one region that represents quantal size effect;
Collector electrode, base electrode and emitter-base bandgap grading electrode, it is coupled with described collector region, described base region and described emitter region respectively; And
Wear tunnel barrier layer, it is placed at least institute expose portion top on the described surface of described base region;
Whereby, the signal applying with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode can produce optical signalling from described base region.
14. devices according to claim 13, described at least one region that wherein represents quantal size effect comprises discontinuous or on-plane surface quantal size region.
15. 1 kinds for to produce the method for optical signalling through improving efficiency, and it comprises the following steps:
Laminar semiconductor structure is provided, semiconductor drain region that described laminar semiconductor structure comprises substrate, the first conduction type, is placed in the semiconductor base region of the second conduction type on described drain region and is arranged as the semiconductor emitter region of described first semiconductor type of the table top of the surperficial part top of described base region;
At least one region that represents quantal size effect is provided in described base region;
Base stage/the drain electrode being coupled with described base region and described drain region is provided, and the emitter-base bandgap grading electrode being coupled with described emitter region is provided;
Above at least institute expose portion on the described surface of described base region, provide and wear tunnel barrier layer; And
Apply signal with respect to described base stage/drain electrode and described emitter-base bandgap grading electrode to produce optical signalling from described base region.
16. methods according to claim 15, the wherein said step that described at least one region that represents quantal size effect is provided comprises provides discontinuous or on-plane surface quantal size region.
17. 1 kinds of methods for the optical tilt charge devices of making to mate in fact with GaAs lattice constant, it comprises the following steps:
Laminar semiconductor structure is provided, and described laminar semiconductor structure comprises: GaAs substrate; Semiconductor collector region; Semiconductor base region, it comprises through Doped GaAs the second base stage subregion, InGaAsN quantal size region and through Doped GaAs the first base stage subregion; And semiconductor emitter region; And
Collector electrode, base electrode and emitter-base bandgap grading electrode with described collector region, described base region and the coupling of described emitter region are provided respectively.
18. methods according to claim 17, it is further comprising the steps: apply the signal of telecommunication with respect to described collector electrode, described base electrode and described emitter-base bandgap grading electrode to produce light transmitting from described base region.
19. according to the method described in claim 17 or 18, and the wherein said step that described InGaAsN quantal size region is provided is included in InGaAsN quantum well is provided between GaAs barrier layer.
20. methods according to claim 19, it further comprises: by the described laminar semiconductor structure of growing for the intervention InAlGaP alloy etch stop-layer that defines base stage table top and emitter-base bandgap grading table top with the etchant that optionally removes the material based on arsenide.
21. according to the method described in claim 17 or 18, and it further comprises: on Si, on GaAs substrate, form described laminar semiconductor structure, and described method further comprises from described substrate formation Si lens.
22. 1 kinds of methods for the two-terminal optical tilt charge devices of making to mate in fact with GaAs lattice constant, it comprises the following steps:
Laminar semiconductor structure is provided, and described laminar semiconductor structure comprises: GaAs substrate; Semiconductor drain region; Semiconductor base region, it comprises through Doped GaAs the second base stage subregion, InGaAsN quantal size region and through Doped GaAs the first base stage subregion; And semiconductor emitter region; And
Provide and the base stage/collector electrode of described collector region and the coupling of described base region and the emitter-base bandgap grading electrode being coupled with described emitter region.
23. methods according to claim 22, it is further comprising the steps: apply the signal of telecommunication with respect to described emitter-base bandgap grading electrode and described base stage/drain electrode to produce light transmitting from described base region.
24. according to the method described in claim 22 or 23, and the wherein said step that described InGaAsN quantal size region is provided is included in InGaAsN quantum well is provided between GaAs barrier layer.
25. according to the method described in claim 22 or 23, and it is further included on the upper GaAs substrate of Si and forms described laminar semiconductor structure, and described method further comprises from described substrate formation Si lens.
26. 1 kinds of optical tilt charge devices of mating in fact with GaAs lattice constant, it comprises:
Laminar semiconductor structure, it comprises: GaAs substrate; Semiconductor collector region; Semiconductor base region, it comprises heavy doping GaAs the second base stage subregion, InGaAsN quantal size region and heavy doping GaAs the first base stage subregion; And semiconductor emitter region; Described collector region and described emitter region have the conduction type with the conductivity type opposite of described base stage subregion; And
Collector electrode, base electrode and emitter-base bandgap grading electrode, it is coupled with described collector region, described base region and described emitter region respectively;
To produce light transmitting from described base region with respect to the applying of the signal of telecommunication of described collector electrode, described base electrode and described emitter-base bandgap grading electrode whereby.
27. optical tilt charge devices according to claim 26, the described InGaAsN quantal size region in wherein said base region comprises the quantum well having at least about the degree of depth of 0.25eV.
28. according to the optical tilt charge devices described in claim 26 or 27, and wherein said InGaAsN quantal size region is included in the InGaAsN quantum well between GaAs barrier layer.
29. optical tilt charge devices according to claim 26, wherein said GaAs substrate is placed on silicon, and wherein said silicon is the form of lens.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161629181P | 2011-11-14 | 2011-11-14 | |
| US201161629175P | 2011-11-14 | 2011-11-14 | |
| US61/629,181 | 2011-11-14 | ||
| US61/629,175 | 2011-11-14 | ||
| PCT/US2012/064778 WO2013074496A1 (en) | 2011-11-14 | 2012-11-13 | Optical tilted charge devices and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103930994A true CN103930994A (en) | 2014-07-16 |
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| CN201280055790.2A Pending CN103930994A (en) | 2011-11-14 | 2012-11-13 | Optical tilted charge devices and methods |
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| Country | Link |
|---|---|
| EP (1) | EP2780945A4 (en) |
| CN (1) | CN103930994A (en) |
| TW (1) | TW201332238A (en) |
| WO (1) | WO2013074496A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870166A (en) * | 2016-04-22 | 2016-08-17 | 杭州立昂东芯微电子有限公司 | Indium-gallium-phosphorus heterojunction bipolar type transistor and manufacturing method therefor |
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| US20030211647A1 (en) * | 2002-05-07 | 2003-11-13 | Bour David P. | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
| CN1925181A (en) * | 2005-08-29 | 2007-03-07 | 株式会社东芝 | Semiconductor device |
| WO2007121524A1 (en) * | 2006-04-20 | 2007-11-01 | Epitactix Pty Ltd. | Method of manufacture and resulting structures for semiconductor devices |
| WO2010080694A2 (en) * | 2009-01-08 | 2010-07-15 | The Board Of Trustees Of The University Of Illinois | Light emitting and lasing semiconductor devices and methods |
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| US4723250A (en) * | 1985-12-20 | 1988-02-02 | Ga Technologies Inc. | Solid state cyclotron laser |
| US4845514A (en) * | 1986-09-19 | 1989-07-04 | Shinko Electric Co., Ltd. | Thermal transfer type line printer capable of setting printing density by command supplied from an external device |
| US7244997B2 (en) * | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
| US8509274B2 (en) * | 2009-01-08 | 2013-08-13 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
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2012
- 2012-11-13 WO PCT/US2012/064778 patent/WO2013074496A1/en active Application Filing
- 2012-11-13 EP EP12850478.4A patent/EP2780945A4/en not_active Withdrawn
- 2012-11-13 CN CN201280055790.2A patent/CN103930994A/en active Pending
- 2012-11-14 TW TW101142506A patent/TW201332238A/en unknown
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| US6593589B1 (en) * | 1998-01-30 | 2003-07-15 | The University Of New Mexico | Semiconductor nitride structures |
| US20030211647A1 (en) * | 2002-05-07 | 2003-11-13 | Bour David P. | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
| CN1925181A (en) * | 2005-08-29 | 2007-03-07 | 株式会社东芝 | Semiconductor device |
| WO2007121524A1 (en) * | 2006-04-20 | 2007-11-01 | Epitactix Pty Ltd. | Method of manufacture and resulting structures for semiconductor devices |
| WO2010080694A2 (en) * | 2009-01-08 | 2010-07-15 | The Board Of Trustees Of The University Of Illinois | Light emitting and lasing semiconductor devices and methods |
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| CN105870166A (en) * | 2016-04-22 | 2016-08-17 | 杭州立昂东芯微电子有限公司 | Indium-gallium-phosphorus heterojunction bipolar type transistor and manufacturing method therefor |
| CN105870166B (en) * | 2016-04-22 | 2019-02-12 | 杭州立昂东芯微电子有限公司 | A kind of indium gallium phosphorus Heterojunction Bipolar Transistors and its manufacturing method |
Also Published As
| Publication number | Publication date |
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| WO2013074496A1 (en) | 2013-05-23 |
| EP2780945A4 (en) | 2015-11-04 |
| TW201332238A (en) | 2013-08-01 |
| EP2780945A1 (en) | 2014-09-24 |
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