CN103924191A - Method for plating ITO thin film on substrate - Google Patents
Method for plating ITO thin film on substrate Download PDFInfo
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- CN103924191A CN103924191A CN201310013626.1A CN201310013626A CN103924191A CN 103924191 A CN103924191 A CN 103924191A CN 201310013626 A CN201310013626 A CN 201310013626A CN 103924191 A CN103924191 A CN 103924191A
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Abstract
The invention provides a novel ITO film-plating process which comprises the steps: providing a flat plate having a heat-conducting property, and placing in a vacuum sputtering cavity; carrying out uniform preheating on the flat plate, to make the flat plate temperature reach a temperature required by film plating; delivering the flat plate to the underneath of a cathode; adjusting the target material loading power, the working gas flow quantity and the auxiliary gas flow quantity; placing at least one substrate required to be plated with an ITO thin film on the flat plate, and preheating; and sputtering to depositing the ITO thin film on the substrate to a required thickness. The method provided by the invention can avoid back face diffraction, simplifies the technological process of a window layer, can realize uniform film plating on a small-size silicon wafer, and is suitable for large-scale production of HIT, monocrystalline/polycrystalline silicon and other photovoltaic cells; and the prepared ITO thin film has low square resistance and high transparency.
Description
Technical field
The present invention relates to a kind of film coating method, relate in particular to a kind of method that is coated with ito thin film on the substrates such as crystal silicon chip.
Background technology
TCO glass; be transparent conductive oxide plated film (Transparent conducting oxide) glass; at surface of plate glass, by the method for physics or plated film, evenly to plate the conductive oxide film of layer of transparent; TCO glass, because it is transparent, the excellent properties of conduction is widely used, can be applied in the fields such as solar film battery, indicating meter, hot mirror, transparent surface calorifier, luminescent device and radar shielding protection.First TCO glass be applied in flat-panel monitor, in recent years, the rise of crystalline silicon price has greatly promoted the development of thin-film solar cells, current thin film solar cell accounts for world's photovoltaic market share and surpasses 10%, the necessary member of electrode before photovoltaic uses TCO glass as battery, the market requirement increases rapidly, becomes a very powerful and exceedingly arrogant high-tech coated glass product.
Tin indium oxide (ITO) is a kind of important TCO material, has the physical attributes such as broad-band gap, high electron mobility, shows low square resistance and high transmittance under very thin thickness, and this becomes the preferred material of photovoltaic and display device.
Conventionally, ito thin film adopts vacuum sputtering technique to be coated with rete on various substrates, and established technology gas ionizes under electronics bombardment, and charged gaseous ion bombards ITO ceramic target under electric field acceleration, realize ITO nanoparticle and deposit on substrate, and continuous film forming.
The preparation method of the disclosed indium tin oxide transparent conducting film of patent CN1257135A, under vacuum condition, take argon gas as working gas, and sputter obtains the indium tin oxide films of 2 ~ 100nm thickness.
Patent CN100432284C discloses a kind of method that low temperature is prepared ito thin film, and underlayer temperature is 100 ℃, and oxygen partial pressure keeps 5.0 * 10
-2pa, can efficient lossless wound prepare ito thin film.
Patent CN101294272A discloses a kind of method of room temperature sputtering sedimentation ITO transparent conductive film, first, by rf magnetron sputtering plating silicon dioxide layer on substrate, then on silicon dioxide layer, deposits ito thin film.
CN101914755A discloses a kind of production method of winding banded ITO conductive film, similarly, is also elder generation's sputtering sedimentation silicon dioxide film, then sputtering sedimentation ito thin film under vacuum condition on base material.
For take the plated film that silicon chip carries out as substrate (or base material), the general circular planar target mode depositional coating that adopts, substrate temperature, process gas flow and oxygen molecule content, loading power are the main technologic parameters of adjusting ITO rete, and the transmission of substrate is generally to adopt roller-way or mechanical arm directly to transmit a slice to each target position to get off to be coated with ito thin film.This circular plated film has poor membrane uniformity, especially prepares in the situation of this thick film of membrane electrode; There is back side diffraction phenomenon in this sputter coating process simultaneously, and production efficiency is low, is unfavorable for the mass production based on crystal silicon cell.
Summary of the invention
For circular planar target mode in prior art, deposit the problem that film uniformity is poor, production efficiency is low that ito thin film exists, the invention provides a kind of novel ITO coating process, the ito thin film of high transmission rate, low square resistance can be prepared, and back side diffraction can be avoided.
Therefore, the object of this invention is to provide a kind of method that is coated with ito thin film on substrate.
The method that is coated with ito thin film on substrate of the present invention, step comprises:
Step 1, provides a flat board with heat conductivility, is placed in vacuum sputtering chamber;
Step 2, flat board is carried out to even preheating, and it is temperature required to make plate temperature reach plated film;
Step 3, is delivered to negative electrode below by flat board; And adjust target and load power, working gas flow and assist gas flow;
Step 4, the substrate that at least one need to be coated with to ito thin film is placed in flat board above, carries out preheating;
Step 5 by sputter, deposits ito thin film to desired thickness on substrate.
Wherein, sputter of the present invention preferably adopts line style magnetron sputtering.
Wherein, in described sputter procedure, target can be rectangle plane target or cylindric rotary target material, or also can adopt circular planar target, and concrete example is as middle RF sputtering indium stannum alloy target, ITO ceramic flat surface target and tubular rotary target.
Described ITO can be pure tin indium oxide, also can be the tin indium oxide doped with other available element, general doped element is metal or metal oxide, and concrete example is as ZnO doping ITO, Ta doped ITO, Nd doped ITO, Zr doped ITO, Fe doped ITO, Co doped ITO, Au doped ITO, WO
3doped ITO, Al doped ITO, Ag doped ITO, Sb doped ITO.
The described substrate that need to be coated with ito thin film can be the substrate that needs arbitrarily plated film, most preferably is crystal silicon chip, and in particular for the crystalline silicon battery plate of photovoltaic cell, described photovoltaic cell can be HIT battery, monocrystalline silicon battery or polycrystal silicon cell.
In aforesaid method of the present invention, described in there is heat conductivility flat board can be metal sheet, alloy sheets, high-temperature resistance plastice plate, ceramic plate or sheet glass, and be preferably sheet glass.
Described sheet thickness is preferably 2 ~ 10mm, more preferably 3 ~ 6mm.
In a kind of preferred embodiment of the method for the invention, after substrate is placed on described flat board, with adhesive tape, substrate is fixed, should be understood that, described adhesive tape can be used under plated film working temperature.
In the another kind of preferred embodiment of the method for the invention, described flat board is provided with frame type mask, each substrate is positioned over respectively in different frame type masks, thereby substrate is fixed.
Described frame type mask shape is unrestricted, it can be regular shape or irregularly shaped, as square, circular, oval, semicircle, trilateral or other Polygons and known irregular or regular shape arbitrarily, can the in the situation that of fixed substrate, all can use.
In the above-mentioned method of the present invention, in step 6, the working temperature that sputter is coated with ito thin film preferably within the scope of 100 ~ 300 ℃, and is preferably 150 ~ 300 ℃, and more preferably 150 ~ 240 ℃, more preferably 180 ~ 240 ℃.
In the above-mentioned method of the present invention, in step 6, the working gas flow that sputter is coated with ito thin film preferably within the scope of 200 ~ 600sccm, 200 ~ 400sccm more preferably.
More preferably, in described working gas, oxygen volume content is preferably more preferably > 0 of 0 ~ 7%(), more preferably 0.5 ~ 2%, more preferably 1 ~ 2%.
In a kind of preferred embodiment of the method for the invention, plate temperature is monitored in real time, for example by infrared sensor, monitor in real time.
Method provided by the present invention, can avoid back side diffraction, simplifies the technical process of Window layer, can on small size silicon chip, realize homogeneity plated film, is suitable for the production in enormous quantities of the photovoltaic cells such as HIT, monocrystalline/polycrystalline silicon.
The ito thin film transmittance of described preparation, up to more than 90%, can be realized the square resistance of 7-50 ohm scope, can meet the demand of current various photovoltaic cells.
Accompanying drawing explanation
Fig. 1 has shown that substrate is placed in a kind of arrangement embodiment on flat board;
Fig. 2 has shown ito thin film light transmittance curve prepared by a kind of embodiment of the method for the invention, and wherein, film thickness is 120nm.
Embodiment
Under lower coating temperature, realizing low square resistance, high transmission rate and homogeneity plated film is the key that ITO transparent conductive film is applied to photovoltaic cell, and it can reduce the series resistance of device effectively, improves the electricity conversion of battery.For vacuum sputtering technique, main by adjusting substrate temperature, process gas and sputtering power, be coated with the ito thin film with good physical behavior.The present invention has designed a kind of technique that is coated with ITO nesa coating on crystal silicon chip; can prepare the ito thin film of high transmission rate, low square resistance; utilize the mode of dull and stereotyped carrier protection to avoid silicon chip back side diffraction simultaneously; the uniform distribution of ito thin film and passivation effect are conducive to improve the photovoltaic cell transformation efficiency based on crystalline silicon, can be widely used in the mass production of the photovoltaic cells such as HIT, monocrystalline/polycrystalline silicon.
Below by embodiment, the present invention's speed search method is described in detail and is described, so that better understand the scope of the invention, but should be understood that, following embodiment does not limit the scope of the invention.
Adopt line style magnetron sputtering equipment and rectangle plane target or cylindric rotary target, be mainly used in the Window layer membrane electrode of crystal silicon photovoltaic cell, line style production line has continuous advance and membrane uniformity feature, can meet photovoltaic cell for the film uniformity requirement of window film electrode, be suitable for mass production.Step is as follows:
Step 1
The large-size glass that cleaning thickness is 3-6mm is dull and stereotyped, and size is 2200mm * 2600mm for example, or 1100mm * 1400mm.
Step 2
In vacuum chamber, glass plate is carried out to even preheating, and pop one's head in and monitor in real time the temperature of glass plate by infrared sensor, adjust glass plate temperature and reach technological temperature.
Step 3
Transmission glass flat board, to negative electrode below, is adjusted target and is loaded power and main process gas flow, and control assist gas flow, so that in reach ± 2% scope of ITO film thickness uniformity.
And O in adjusting process gas
2content, so that ITO rete square resistance and transmittance reach best.
Step 4
As shown in Figure 1, small size crystalline silicon battery plate (for example 4 cun of monocrystalline silicon pieces) 3 is neatly placed in and was cleaned on glass plate 1, cell piece 3 adopts frame type mask 2 fixing around, preheats.
In this step, also can adopt high temperature resistant adhesive tape that crystalline silicon battery plate 3 is fixing, it can play the effect identical with frame type mask 2.
Utilize large specification flat board to serve as carrier, small size crystal silicon cell is placed on sheet glass in order, the combining closely of cell piece and glass; the protection of the dull and stereotyped carrier such as glass to silicon chip; avoided the impact of diffraction phenomenon on battery device, simplified technical process, be conducive to reduce production costs.Glass plate is adopted to infrared measurement of temperature mode timing monitoring silicon temperature indirectly, and the temperature of adjustment glass can realize the accurate heating of silicon chip.
Step 5
By sputter, on substrate, deposit ito thin film to desired thickness.
embodiment 1
In the present embodiment, designed the ITO coating process of temperature within the scope of 100-300 degree, found: within the scope of this, improve coating temperature, square resistance can constantly reduce.And consider the temperature requirement of battery device, and therefore, the ITO coating process between design coating temperature 150 to 240 degree, the ITO rete that now thickness is 120nm, square resistance can be realized minimum 24 ohm.
embodiment 2
In the present embodiment, designed the ITO coating process of working gas flow within the scope of 200-600sccm, found: within the scope of this, improve working gas flow, square resistance has presented rising trend.But for the ITO rete of 100nm, square resistance variation range is within the scope of 30-55 ohm.
embodiment 3
In the present embodiment, designed the coating process of oxygen level within the scope of 0-7%, find: within the scope of this, along with the raising of oxygen level, the square resistance change curve of ITO rete presents " V " type, in 0.5-2% scope, there is lower one piece resistance, ITO rete to thickness 120nm, square resistance can be low to moderate 19 ohm, and rete transmittance surpasses 90%(as shown in Figure 2, wavelength region 380-1100nm, film thickness 120nm).If improve the thickness of ITO rete, the square resistance of 330nm ITO rete can be low to moderate 7 ohm, and this can meet the demand of various battery devices to window transparency electrode.
embodiment 4
Requirement for battery device to window transparency electrode, the present embodiment special design the ITO coating process of 180-240 ℃ of coating temperature scope, working gas flow range 200-400sccm, oxygen content 1-2% scope, square resistance low (7 ~ 50 ohm), transmittance high (being greater than 90%) can be realized, the demand of various photovoltaic cells can be met.
The transmitting procedure of dull and stereotyped carrier type of the present invention and uniformly gas distribution ability, can be applied to the production in enormous quantities of the window electrode of HIT battery, monocrystalline/polycrystalline silicon battery.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the modification done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.
Claims (12)
1. on substrate, be coated with a method for ito thin film, it is characterized in that, step comprises:
Step 1, provides a flat board with heat conductivility, is placed in vacuum sputtering chamber;
Step 2, flat board is carried out to even preheating, and it is temperature required to make plate temperature reach plated film;
Step 3, is delivered to negative electrode below by flat board; And adjust target and load power, working gas flow and assist gas flow;
Step 4, the substrate that at least one need to be coated with to ito thin film is placed in flat board above, carries out preheating;
Step 5 by sputter, deposits ito thin film to desired thickness on substrate.
2. method according to claim 1, is characterized in that, after substrate is placed on described flat board, with adhesive tape, substrate is fixed; Or described flat board is provided with frame type mask, each substrate is positioned over respectively in different frame type masks, thereby substrate is fixed.
3. method according to claim 1 and 2, is characterized in that, described in there is heat conductivility flat board be selected from metal sheet, alloy sheets, high-temperature resistance plastice plate, ceramic plate or sheet glass.
4. according to the method described in any one in claim 3, it is characterized in that, described sheet thickness is preferably 2 ~ 10mm.
5. method according to claim 4, is characterized in that, in step 6, sputter is coated with the working temperature of ito thin film within the scope of 100 ~ 300 ℃.
6. method according to claim 1, is characterized in that, in step 6, sputter is coated with the working gas flow of ito thin film within the scope of 200 ~ 600sccm.
7. according to the method described in claim 1 or 6, it is characterized in that, oxygen volume content is preferably 0 ~ 7%.
8. method according to claim 1, is characterized in that, described sputter preferably adopts line style magnetron sputtering.
9. according to the method described in claim 1 or 8, it is characterized in that, in described sputter procedure, target is selected from rectangle plane target or cylindric rotary target material.
10. according to the method described in claim 1 or 9, it is characterized in that, described ITO is selected from pure tin indium oxide or doped with the tin indium oxide of other available element.
11. methods according to claim 1, is characterized in that, the described substrate that need to be coated with ito thin film is crystal silicon chip.
12. methods according to claim 1, is characterized in that, in procedure described in claim 1, plate temperature are monitored in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310013626.1A CN103924191A (en) | 2013-01-15 | 2013-01-15 | Method for plating ITO thin film on substrate |
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| CN201310013626.1A CN103924191A (en) | 2013-01-15 | 2013-01-15 | Method for plating ITO thin film on substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110408887A (en) * | 2018-04-26 | 2019-11-05 | 上海新微技术研发中心有限公司 | Preparation method of ITO transparent conductive layer on surface of wafer-level silicon-based aluminum |
| CN111471965A (en) * | 2020-04-30 | 2020-07-31 | 苏州迈正科技有限公司 | Conveying carrier plate, vacuum coating equipment and vacuum coating method |
| CN112376025A (en) * | 2020-10-27 | 2021-02-19 | 吉林师范大学 | Method for adjusting near-infrared absorption peak wavelength of Ag-ITO composite material |
| CN113526877A (en) * | 2021-07-27 | 2021-10-22 | 中国航发北京航空材料研究院 | Preparation method and device of coated glass |
| CN114015986A (en) * | 2020-07-17 | 2022-02-08 | 神华（北京）光伏科技研发有限公司 | Current collecting system and preparation device and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1558001A (en) * | 2002-12-30 | 2004-12-29 | 奥斯兰姆奥普托半导体有限责任公司 | Substrate holder |
| CN1724704A (en) * | 2004-07-23 | 2006-01-25 | 应用材料股份有限公司 | Deposition repeatability of pecvd films |
| JP2007046091A (en) * | 2005-08-09 | 2007-02-22 | Canon Inc | Temperature control device in vacuum vessel, and thin film deposition method |
| CN101921987A (en) * | 2009-06-10 | 2010-12-22 | 鸿富锦精密工业（深圳）有限公司 | Film sputtering and coating device |
| CN102312208A (en) * | 2011-09-30 | 2012-01-11 | 芜湖长信科技股份有限公司 | Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering |
-
2013
- 2013-01-15 CN CN201310013626.1A patent/CN103924191A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1558001A (en) * | 2002-12-30 | 2004-12-29 | 奥斯兰姆奥普托半导体有限责任公司 | Substrate holder |
| CN1724704A (en) * | 2004-07-23 | 2006-01-25 | 应用材料股份有限公司 | Deposition repeatability of pecvd films |
| JP2007046091A (en) * | 2005-08-09 | 2007-02-22 | Canon Inc | Temperature control device in vacuum vessel, and thin film deposition method |
| CN101921987A (en) * | 2009-06-10 | 2010-12-22 | 鸿富锦精密工业（深圳）有限公司 | Film sputtering and coating device |
| CN102312208A (en) * | 2011-09-30 | 2012-01-11 | 芜湖长信科技股份有限公司 | Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110408887A (en) * | 2018-04-26 | 2019-11-05 | 上海新微技术研发中心有限公司 | Preparation method of ITO transparent conductive layer on surface of wafer-level silicon-based aluminum |
| CN110408887B (en) * | 2018-04-26 | 2021-11-30 | 上海新微技术研发中心有限公司 | Preparation method of ITO transparent conductive layer on surface of wafer-level silicon-based aluminum |
| CN111471965A (en) * | 2020-04-30 | 2020-07-31 | 苏州迈正科技有限公司 | Conveying carrier plate, vacuum coating equipment and vacuum coating method |
| CN114015986A (en) * | 2020-07-17 | 2022-02-08 | 神华（北京）光伏科技研发有限公司 | Current collecting system and preparation device and preparation method thereof |
| CN112376025A (en) * | 2020-10-27 | 2021-02-19 | 吉林师范大学 | Method for adjusting near-infrared absorption peak wavelength of Ag-ITO composite material |
| CN113526877A (en) * | 2021-07-27 | 2021-10-22 | 中国航发北京航空材料研究院 | Preparation method and device of coated glass |
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Application publication date: 20140716 |