CN103904125A - Thin-film transistor - Google Patents
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- CN103904125A CN103904125A CN201210573688.3A CN201210573688A CN103904125A CN 103904125 A CN103904125 A CN 103904125A CN 201210573688 A CN201210573688 A CN 201210573688A CN 103904125 A CN103904125 A CN 103904125A
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- atom
- film transistors
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- 239000010409 thin film Substances 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 18
- 239000011777 magnesium Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 13
- 239000011575 calcium Substances 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 239000011572 manganese Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011133 lead Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical group 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 description 32
- 239000000758 substrate Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a thin-film transistor comprising a grid electrode, a channel layer, a grid insulating layer which is arranged between the grid electrode and the channel layer, and a source electrode and a drain electrode which are arranged on the opposite two sides of the channel layer and respectively contacted with the channel layer. A first atom capture layer is clamped between the channel layer and the grid insulating layer. The thin-film transistor is not liable to be influenced by the external environment and is stable in electrical properties.
Description
Technical field
The present invention relates to a kind of thin-film transistor.
Background technology
Along with the progress of technology, thin-film transistor has been widely applied among display, to adapt to the demand such as slimming and miniaturization of display.Thin-film transistor generally comprises the parts such as grid, drain electrode, source electrode and channel layer, and its voltage by control grid changes the conductivity of channel layer, makes to form between source electrode and drain electrode the state of conducting or cut-off.
Thin-film transistor adopts transparent oxide semiconductor material (Transparent oxide semiconductor) conventionally, as indium oxide gallium zinc (InGaZnO), tin indium oxide zinc (InSnZnO), indium zinc oxide (IZO) etc. is made channel layer, its main charge carrier is by adulterating or lattice defect (lattice defects), as oxygen vacancies (oxygen vacancies), metal hole (metal vacancies), defect between lattice (interstitials) or the defect (oxygen associated defects) relevant with oxygen form, the oxygen vacancies that particularly oxygen forms forms.Therefore the carrier concentration that, makes metal oxide semiconductor material is easily direct associated because have with the external environment such as oxygen content, aqueous vapor, illumination and plasma (plasma damage).
Summary of the invention
In view of this, be necessary to provide a kind of and be difficult for being affected by the external environment, have the thin-film transistor of stable electric property.
A kind of thin-film transistor, comprise grid, channel layer, gate insulation layer between grid and channel layer and be positioned at the both sides that channel layer is relative and source electrode and the drain electrode contacting with channel layer respectively, between this channel layer and gate insulation layer, being folded with one first atom seizure layer.
In thin-film transistor provided by the invention, atom seizure layer can form atom bond with oxygen atom, make oxygen atom be difficult to infiltration from the oxygen atom in oxygen or aqueous vapor outside channel layer thereby catch, and this atom seizure layer can also stop oxygen atom in the channel layer of being made up of oxide semiconductor to exosmosis, thereby the metal-oxygen defect weak to bond power in oxide semiconductor forms protection, change to reduce the lattice defect relevant to oxygen in oxide semiconductor, make thin-film transistor be difficult for being affected by the external environment and there is stable electric property.
Brief description of the drawings
Fig. 1 is the structural representation of the thin-film transistor that provides of first embodiment of the invention.
Fig. 2 is the structural representation of the thin-film transistor that provides of second embodiment of the invention.
Fig. 3 is the structural representation of the thin-film transistor that provides of third embodiment of the invention.
Main element symbol description
| Thin- |
10、20、30 |
| |
11 |
| |
12 |
| |
13 |
| |
14、18 |
| |
15 |
| |
16 |
| |
17 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, the thin-film transistor 10 that first embodiment of the invention provides is bottom grating structure thin-film transistor.This thin-film transistor 10 comprises substrate 11, grid 12, gate insulation layer 13, atom seizure layer 14, channel layer 15, source electrode 16 and drain electrode 17.
This substrate 11 is for carrying grid 12.The making material of this substrate 11 can be glass, quartz, silicon wafer, Merlon, polymethyl methacrylate or metal forming etc.
This grid 12 is arranged on the upper surface of substrate 11, and is positioned at the upper face center of substrate 11.The making material of this grid 12 can be selected from copper, aluminium, nickel, magnesium, chromium, molybdenum, tungsten and alloy thereof.
This gate insulation layer 13 is arranged on the upper surface of substrate 11, and cover gate 12.The making material of this gate insulation layer 13 comprises the oxide S iOx of silicon, and the nitride SiNx of silicon or the nitrogen oxide SiONx of silicon, or the insulating material of other high-ks, as Ta
2o
5or HfO
2.
This atom seizure layer 14 is arranged on the upper surface of gate insulation layer 13, and is positioned at the upper face center of gate insulation layer 13.The main component of this atom seizure layer 14 can comprise at least one in carbon (C), silicon (Si), germanium (Ge), tin (Sn), plumbous (Pb), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), nickel (Ni), aluminium (Al), cobalt (Co), platinum (Pt), palladium (Pd) and manganese (Mn).Being doping to of this atom seizure layer 14 point is selected from the one in silicon (Si), germanium (Ge), carbon (C), nitrogen (N), aluminium (Al), boron (B), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), nickel (Ni) and cobalt (Co).
This channel layer 15 is arranged on the upper surface of atom seizure layer 14, and covers this atom seizure layer 14.This channel layer 15 can be amorphism, polycrystallinity, crystalline structure or has micro-crystallization structure.This channel layer 15 can be made up of oxide semiconductor.Preferably, this channel layer 15 is metal oxide semiconductor layer, and this metal oxide semiconductor layer institute containing metal is selected from least one in indium, gallium, zinc, tin, aluminium, lead, molybdenum, manganese, magnesium, germanium and cadmium.In this enforcement, this channel layer 15 is indium oxide gallium zinc layers.
This source electrode 16 and drain electrode 17 are arranged on the upper surface of channel layer 15.This source electrode 16 and the drain electrode 17 relative both sides that are positioned on channel layer 15 upper surfaces, thereby this source electrode 16 and drain electrode 17 are extended to the direction away from the other side respectively, contact to cover the both sides of the edge of channel layer 15 and atom seizure layer 14 and to extend to the upper surface of gate insulation layer 13.When channel layer 15 covers this atom seizure layer 14 completely, or when atom seizure layer 14 is not electrically connected with source electrode 16 and drain electrode 17 simultaneously, this atom seizure layer 14 can be also metal level, and its material can be selected from one or its alloy in aluminium (Al), tin (Sn), plumbous (Pb), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), nickel (Ni), cobalt (Co), platinum (Pt), palladium (Pd) and manganese (Mn).
In above-mentioned thin-film transistor 10, atom seizure layer 14 can form atom bond with oxygen atom, make oxygen atom be difficult to infiltration from the oxygen atom in oxygen or aqueous vapor outside channel layer 15 thereby catch, and this atom seizure layer 14 can also stop oxygen atom in the channel layer 15 of being made up of oxide semiconductor to exosmosis, thereby the metal-oxygen defect weak to bond power in oxide semiconductor forms protection, change to reduce the lattice defect relevant to oxygen in oxide semiconductor, make thin-film transistor 10 be difficult for being affected by the external environment and there is stable electric property.
Referring to Fig. 2, the thin-film transistor 20 that second embodiment of the invention provides is top-grate structure thin film transistor.This thin-film transistor 20 comprises substrate 11, grid 12, gate insulation layer 13, atom seizure layer 14, channel layer 15, source electrode 16 and drain electrode 17 equally.
This source electrode 16 and drain electrode 17 are arranged on the upper surface of substrate 11, and are positioned at the both sides of substrate 11 upper surfaces.Middle position local covering that this channel layer 15 is arranged on substrate 11 upper surfaces are positioned at the source electrode 16 of substrate 11 upper surface both sides and drain 17.This atom seizure layer 14 is arranged on the upper surface of channel layer 15 and covers this channel layer 15.This gate insulation layer 13 is arranged on the upper surface of atom seizure layer 14 and covers the middle position of atom seizure layer 14 upper surface.This grid 12 is arranged on gate insulation layer 13 upper surfaces, and is positioned at the middle position of gate insulation layer 13 upper surfaces.
The material that above-mentioned thin-film transistor 20 is each layer is selected can be identical with thin-film transistor 10, and the two difference is only that thin-film transistor 20 is for top-grate structure thin film transistor, and thin-film transistor 10 is bottom grating structure thin-film transistor.
Referring to Fig. 3, the thin-film transistor 30 that third embodiment of the invention provides is bottom grating structure thin-film transistor.This thin-film transistor 30 comprises substrate 11, grid 12, gate insulation layer 13, atom seizure layer 14, channel layer 15, source electrode 16 and drain electrode 17 equally.The structure configuration of this thin-film transistor 30 is identical with thin-film transistor 10 cardinal principles, and difference is, this thin-film transistor 30 is than more than 10 atom seizure layers 18 of thin-film transistor.This atom seizure layer 18 is positioned at the side of channel layer 15 away from gate insulation layer 13.Concrete, this atom seizure layer 18 is between source electrode 16 and drain electrode 17, and not with source electrode 16 with drain and 17 contact.It should be noted that.This atom seizure layer 18 also can be connected with the one in source electrode 16 and drain electrode 17.
In addition, understandable, the configuration structure of thin-film transistor of the present invention is not limited to above-mentioned three contents that embodiment introduces, for example, this thin-film transistor not only can be top gate structure or bottom grating structure thin-film transistor, can be also coplanar structure or anti-co-planar thin film transistor, staggered or reciprocal cross shift thin-film transistor.
Be understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (27)
1. a thin-film transistor, comprise grid, channel layer, gate insulation layer between grid and channel layer and be positioned at the both sides that channel layer is relative and source electrode and the drain electrode contacting with channel layer respectively, it is characterized in that: between this channel layer and gate insulation layer, be folded with one first atom seizure layer.
2. thin-film transistor as claimed in claim 1, is characterized in that, described channel layer is amorphism, polycrystallinity or crystalline structure.
3. thin-film transistor as claimed in claim 2, is characterized in that, described channel layer has micro-crystallization structure.
4. thin-film transistor as claimed in claim 1, is characterized in that, described channel layer is oxide semiconductor layer.
5. thin-film transistor as claimed in claim 4, it is characterized in that, described channel layer is metal oxide semiconductor layer, and this metal oxide semiconductor layer institute containing metal is selected from least one in indium, gallium, zinc, tin, aluminium, lead, molybdenum, manganese, magnesium, germanium and cadmium.
6. thin-film transistor as claimed in claim 5, is characterized in that, described channel layer is indium oxide gallium zinc layer.
7. thin-film transistor as claimed in claim 1, is characterized in that, this thin-film transistor is top gate structure or bottom grating structure thin-film transistor.
8. thin-film transistor as claimed in claim 1, is characterized in that, this thin-film transistor is coplanar structure or anti-co-planar thin film transistor.
9. thin-film transistor as claimed in claim 1, is characterized in that, this thin-film transistor is staggered or reciprocal cross shift thin-film transistor.
10. thin-film transistor as claimed in claim 1, is characterized in that, the composition of described the first atom seizure layer comprises at least one in carbon, silicon, germanium, tin, lead, magnesium, calcium, strontium, barium, titanium, nickel, aluminium, cobalt, platinum, palladium and manganese.
11. thin-film transistors as claimed in claim 1, is characterized in that, described the first atom seizure layer has two-dimensional structure.
12. thin-film transistors as claimed in claim 11, is characterized in that, described the first atom seizure layer is graphene layer.
13. thin-film transistors as claimed in claim 11, is characterized in that, described the first atom seizure layer is silicon atom layer doped layer.
14. thin-film transistors as claimed in claim 1, is characterized in that, being doping to of described the first atom seizure layer point is selected from the one in silicon, germanium, carbon, nitrogen, aluminium, boron, magnesium, calcium, strontium, barium, titanium, nickel and cobalt.
15. thin-film transistors as claimed in claim 1, is characterized in that, described the first atom seizure layer has three-dimensional structure.
16. thin-film transistors as claimed in claim 15, is characterized in that, stacking the forming that described the first atom seizure layer is multiple graphene layers.
17. thin-film transistors as claimed in claim 15, is characterized in that, described the first atom seizure layer is porous semiconductor layer.
18. thin-film transistors as claimed in claim 17, is characterized in that, described the first atom seizure layer is the porous semiconductor layer of silicon, germanium, SiGe or carbon material.
19. thin-film transistors as claimed in claim 18, is characterized in that, described the first atom seizure layer is porous Si
xge
1-xsemiconductor layer, wherein 0≤x≤1.
20. thin-film transistors as claimed in claim 15, is characterized in that, described the first atom seizure layer is amorphism semiconductor layer.
21. thin-film transistors as claimed in claim 20, is characterized in that, described the first atom seizure layer is the amorphism semiconductor layer of silicon, germanium, SiGe or carbon material.
22. thin-film transistors as claimed in claim 21, is characterized in that, described the first atom seizure layer is amorphism Si
xge
1-xsemiconductor layer, wherein 0≤x≤1.
23. thin-film transistors as claimed in claim 1, is characterized in that, described the first atom seizure layer is metal level, and are not electrically connected with source electrode and drain electrode simultaneously.
24. thin-film transistors as claimed in claim 23, is characterized in that, the material of described the first atom seizure layer is selected from one or its alloy in aluminium, tin, lead, magnesium, calcium, strontium, barium, titanium, nickel, cobalt, platinum, palladium and manganese.
25. thin-film transistors as claimed in claim 1, is characterized in that, this thin-film transistor also comprises the second atom seizure layer, and this second atom seizure layer is positioned at the side of channel layer away from gate insulation layer.
26. thin-film transistors as described in claim 1 or 25, is characterized in that, this thin-film transistor also comprises the second atom seizure layer, and this second atom seizure layer is between source electrode and drain electrode.
27. thin-film transistors as claimed in claim 26, is characterized in that, this second atom seizure layer is connected with the one in source electrode and drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210573688.3A CN103904125A (en) | 2012-12-26 | 2012-12-26 | Thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210573688.3A CN103904125A (en) | 2012-12-26 | 2012-12-26 | Thin-film transistor |
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| Publication Number | Publication Date |
|---|---|
| CN103904125A true CN103904125A (en) | 2014-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210573688.3A Pending CN103904125A (en) | 2012-12-26 | 2012-12-26 | Thin-film transistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779299A (en) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | Metal oxide thin film transistor, preparation method of transistor, display substrate and display device |
| CN109698240A (en) * | 2017-10-24 | 2019-04-30 | 乐金显示有限公司 | Thin film transistor (TFT) including two-dimensional semiconductor and the display equipment including it |
| WO2023240715A1 (en) * | 2022-06-15 | 2023-12-21 | 武汉华星光电半导体显示技术有限公司 | Display panel, display apparatus, and manufacturing method |
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| KR20220057511A (en) * | 2017-10-24 | 2022-05-09 | 엘지디스플레이 주식회사 | Thin film trnasistor comprising 2d semiconductor and display device comprising the same |
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| WO2023240715A1 (en) * | 2022-06-15 | 2023-12-21 | 武汉华星光电半导体显示技术有限公司 | Display panel, display apparatus, and manufacturing method |
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