CN103873010B - Piezoelectric film bulk acoustic resonator and preparation method thereof - Google Patents
Piezoelectric film bulk acoustic resonator and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a piezoelectric film bulk acoustic resonator and a preparation method thereof. The resonator comprises a substrate, an air cavity, a bottom electrode layer, a piezoelectric layer and a top electrode layer, wherein grapheme is used as the electrode layers of the device; a support layer is not needed in the structure of the device, and the air cavity is formed between the grapheme bottom electrode layer and a groove of the substrate; the piezoelectric layer is arranged on the bottom electrode layer, and the top electrode layer is arranged on the piezoelectric layer. A preparation process of a sacrificial layer is adopted, so the dependence of the traditional process on high-precision chemical-mechanical polishing equipment is overcome, the grinding time is shortened, and the flat surface of sacrificial layer is quickly obtained. The piezoelectric film bulk acoustic resonator has the advantages that the structure is novel, the high Q (quality) value and high electromechanical coupling coefficient can be obtained, and the piezoelectric film bulk acoustic resonator can be applied to the manufacturing of filters, duplexes and multiplexes in subsequent radio frequency communication systems, and can also be combined with different sensitive films to manufacture high-performance sensors.
Description
Technical field
The invention belongs to radio-frequency micro electromechanical system technical field, more particularly to a kind of novel piezoelectric thin-film bulk acoustic wave resonator
And preparation method thereof.
Background technology
In recent years, with the development of wireless communication system, increasing function is required to focus in same system.Nothing
Line communication system multifunction, miniaturization development trend to be applied to radio-frequency devices therein propose miniaturization, can it is integrated,
High applying frequency, high-performance, low manufacturing cost etc. are required.With the continuous development of radio-frequency micro electromechanical manufacturing technology, based on piezoelectricity
The FBAR of effect is increasingly becoming the solution of wireless communication system filtering chip because of its excellent performance.With
Traditional SAW filter（SAW）Compare, thin-film bulk acoustic wave filter has higher Q values, it is bigger power capacity, lower
Insertion loss and can be integrated advantage.Compared with the excellent dielectric filter of filtering performance, thin-film bulk acoustic wave filter tool
There is less volume to adapt to the development trend of current wireless communication system miniaturization.
The core texture of FBAR is sandwiched in the sandwich structure between the hearth electrode of top for piezoelectric membrane.Pass through
The electric energy of input can be converted to mechanical energy by the piezo-electric effect of piezoelectric membrane in device, device, and in the form of a sound wave in device
Middle formation standing wave.Due to the speed of sound wave several orders of magnitude less than the speed of electromagnetic wave, therefore the chi of FBAR
It is very little can be made it is less than traditional devices.At present, be usually used in having as the material of FBAR piezoelectric layer ZnO, AlN,
PZT.In this several piezoelectric, AlN is maximum because of its longitudinal wave velocity, and chemical stability is high, and power capacity is big and can be with
The characteristics of standard CMOS process is mutually compatible becomes piezoelectric film material the most frequently used at present.
The difference of implementation is totally reflected based on interface sound wave, the structure of FBAR be divided into cavity type with
Solid-state assembly type（SMR）.Cavity type structure mainly has two kinds：FBAR（Fig. 1）, back of the body quarter type（Fig. 2）.Solid-state assembly type with four/
The total reflection for forming sound wave spaced with low acoustic impedance film layer of the acoustic impedance film layer of wavelength thickness, as shown in Figure 3.Back of the body quarter type
The FBAR of structure causes the mechanical strength of device very low due to etching away substantial amounts of substrate, is unfavorable for device
Practical application, therefore carry on the back quarter type FBAR rarely had preparation.Solid-state assembly type FBAR
Which is caused to have more application under large-power occasions with good mechanical strength and larger power capacity.FBAR due to
With high Q, low insertion loss, high electromechanical coupling factor, it is easy to integrated excellent properties of Denging so that it becomes most widely used film
Bulk acoustic wave resonator.
Traditional FBAR structures are as shown in figure 1, be followed successively by supporting layer, hearth electrode, piezoelectric layer and top electrode on substrate.Sound wave
Total reflection is realized at interface of the supporting layer with air chamber.The manufacture craft of traditional FBAR is etched first on a silicon substrate
Hole, fills sacrificial layer material in hole, and it is SiO to commonly use sacrificial layer material2.After sacrificial layer material deposition, device surface Jing is chemical
Mechanical polishing（CMP）Form flat surface.Then proceed on device surface by magnetron sputtering deposition bottom electrode layer film, bottom
Electrode film continues depositing piezoelectric layer film thereon after making figure by lithography.After piezoelectricity layer pattern is made by lithography, over the piezoelectric layer
Deposition top electrode film.Corrode finally by dry etching over the piezoelectric layer and a window, from the window for etching to device
Sacrifice layer is discharged, and release just completes the making of device after finishing.Conventional films bulk acoustic wave resonator preparation technology exists sacrificial
Domestic animal layer release difficulty is big, needs high accuracy chemical-mechanical polisher etc. to challenge.For reducing the preparation of FBAR
Difficulty and cost, improve device performance, and many researchers propose corrective measure.Existing patent CN1373556 is proposed for the benefit of
The preparation of sacrifice layer release aperture can increase raceway groove on the device substrate.Patent US7140084 B2 proposes thick by reducing film
Rugosity improves device performance.At present, still there is shortcoming such as in the device architecture after improvement：1. need after sacrifice layer deposition
High accuracy CMP tool carries out long-time grinding, increased cost and the process complexity of device preparation.2. conventional thin film body sound
There is supporting layer in wave resonator, although supporting layer can increase the mechanical strength of device, but it reduces the electricity of device simultaneously
Learn performance.How to simplify requirement of the device to CMP, reduce device preparation cost, improving device performance becomes current thin film
The emphasis of bulk acoustic wave resonator preparation technology.
The content of the invention
It is an object of the invention to provide a kind of preparation method of piezoelectric film bulk acoustic wave resonator, so as to effectively simplify thin
Film bulk acoustic resonator structure and preparation technology, improve device performance.
The technical scheme is that：A kind of piezoelectric film bulk acoustic wave resonator, its structure include substrate, air chamber, bottom
Electrode layer, piezoelectric layer and top electrode layer, on substrate, top surface arranges fluted and bottom electrode layer, the groove and bottom electrode layer thereon
The air chamber of device is formed, bottom electrode layer has smooth border with the contact surface of air chamber, arranges piezoelectric layer on bottom electrode layer,
Top electrode layer is set on piezoelectric layer, and the bottom electrode layer and top electrode layer are graphene layer.
Further, the substrate is silicon substrate, and piezoelectric layer is the aln layer with c-axis orientation.
Further, sacrifice layer release window is provided with, sacrifice layer release window is located at bottom electrode layer, top electrode layer border
Between air chamber border.
Further, the depth of the air chamber is 200nm-3 μm.
Further, the bottom electrode layer and top electrode layer are respectively provided with 1-10 layer graphite carbon-coatings.
A kind of preparation method of piezoelectric film bulk acoustic wave resonator, including following step：
A. make sacrifice layer pattern on a silicon substrate by lithography, sacrifice layer groove is etched using being dry-etched on substrate；
B. using the method deposited amorphous sacrificial silicon layer of electron beam evaporation, control the sacrifice layer that sedimentation time obtains needing
Thickness；
C. remaining photoresist in dissolving step a, removes the non-crystalline silicon on the outer photoresist of sacrifice layer groove.Polishing is removed
The non-crystalline silicon of sacrificial layer surface residual obtains even curface；
D. hearth electrode figure deposited graphite alkene bottom electrode layer is made by lithography using the method for molecular beam epitaxy on sacrifice layer
Shape, the electrode layer form air chamber with sacrifice layer below；
E. by sputtering growth of device piezoelectric layer and making piezoelectricity layer pattern by lithography on hearth electrode, one end of the piezoelectric layer
Expose bottom electrode layer；
F. pass through the method growth of device top electrode layer of molecular beam epitaxy over the piezoelectric layer and make top electrode figure by lithography；
G. releasing sacrificial layer it is dried.
Further, specifically include following step：
A. in surface of silicon, rotary coating photoresist, the silicon substrate can be（100）、（110）, or（111）Orientation,
The photoresist in correspondence sacrifice layer region is removed using the method for photoetching, expose silicon substrate, etched using the method for dry etching
The silicon substrate for exposing, etching depth are 200nm-3 μm, and the sacrifice layer recess edge is smoothed；
B. using the method deposited amorphous sacrificial silicon layer of electron beam evaporation, the sacrificial layer thickness is 300nm-3 μm, and this is sacrificial
Domestic animal layer is more than 100 °C in temperature, and sedimentation rate is less than 5/s, and base vacuum is less than 10-3Under conditions of Pa, deposition is obtained, sacrifice layer
Thickness is by sedimentation time control；
C. using remaining photoresist on acetone solution substrate, attachment amorphous thereon while photoresist is dissolved
Silicon film is also removed, and grinds away a little burr remained on sacrifice layer using CMP and obtains smooth non-crystalline silicon sacrificial layer surface；
D. using the method deposited graphite alkene electrode layer of molecular beam epitaxy, this layer of electrode has 1-10 layer graphite carbon-coatings, its
Thickness<10nm, the Graphene electrodes layer are more than 500 °C in temperature, and graphite evaporation rate is less than 0.3nm/min, and base vacuum is low
In 5 × 10-5Prepare under the conditions of Pa, meanwhile, etch hearth electrode figure；
E. the AlN piezoelectric layers of one layer of c-axis orientation are grown on Graphene electrodes layer, and the AlN piezoelectric layers are in ammonia concentration>
40%, power density>9W/cm2, temperature>Obtained by the method deposition of rf magnetron sputtering under 200 °C, the piezoelectric layer border is more than
Sacrifice layer border and exposed portion bottom electrode layer, etch the figure of piezoelectric layer using the method for wet etching, while device is sacrificial
The release window of domestic animal layer is also etched, and release window is located between boundary electrode and air chamber border；
F. using the method deposition device top electrode layer of step d molecular beam epitaxy, and etch top electrode layer figure；
G. dispensing device sacrifice layer drying.
The present invention is had the advantage that compared with prior art：
1st, compared with conventional films bulk acoustic wave device preparation technology, the invention can significantly reduce CMP in device fabrication process
The complexity of technique.The preparation technology proposed using the invention only needs to grind away a little hair of sacrifice layer residual in above-mentioned steps 3
Thorn, just can obtain smooth device surface.Requirement of the conventional preparation techniques to high accuracy CMP tool is overcome, while avoiding
Long-time grinding causes sacrifice layer to cross the appearance for throwing phenomenon.
2nd, without the need for the supporting layer used in conventional device structure in device architecture of the present invention, and propose to use Graphene
As the electrode layer of device, the performance of device can be greatly enhanced.Compared to traditional electrode layer material, Graphene has higher
Electrical conductivity, bigger thermal conductivity factor so that obtained device has bigger Q values and higher power capacity.Meanwhile, Graphene
Electrode is very thin to enable device that higher frequency is obtained.Thin electrode reduces sound wave loss in the electrodes, effectively can carry
The electromechanical coupling factor of high device.
3rd, the present invention is disclosure satisfy that on market to radio-frequency devices high frequency, high power capacity, low-loss, high electromechanical coupling factor
And miniaturization etc. require.
Description of the drawings
Fig. 1 tradition cavity type film bulk acoustic resonator structure figures；
Fig. 2 tradition back of the body quarter type film bulk acoustic resonator structure figures；
Fig. 3 conventional solid-state assembly type film bulk acoustic resonator structure figures；
Preparation flow schematic diagrames of the Fig. 4 to Figure 10 for the inventive method；
For obtaining the device profile map of pit after photoetching silicon substrate, pit both sides dark parts are photoresist to Fig. 4；
Fig. 5 is using the device profile map after the method deposition of sacrificial layer of electron beam evaporation；
Fig. 6 falls device profile map after photoresist using acetone solution；
Fig. 7 devices after polishing remove device profile map after flash removed；
Device profile map after Fig. 8 molecular beam epitaxial growth Graphene hearth electrodes photoetching；
Device profile map after Fig. 9 magnetron sputtering depositions c-axis orientation AlN films photoetching；
Device profile map after Figure 10 molecular beam epitaxial growth graphene top electrodes photoetching；
Figure 11 present invention prepares cavity type FBAR profile；
Figure 12 present invention prepares cavity type FBAR top view.
Specific embodiment
The specific embodiment of the present invention is described below in conjunction with accompanying drawing：
A kind of piezoelectric film bulk acoustic wave resonator, its structure include substrate, air chamber, bottom electrode layer, piezoelectric layer and top electricity
Pole layer, on substrate, top surface arranges fluted and bottom electrode layer, and the groove forms the air chamber of device, bottom with bottom electrode layer thereon
Electrode layer has smooth border with the contact surface of air chamber, arranges piezoelectric layer, arrange top electrode on piezoelectric layer on bottom electrode layer
Layer, the bottom electrode layer and top electrode layer are graphene layer, and the substrate is silicon substrate, and piezoelectric layer is the nitrogen with c-axis orientation
Change aluminium lamination, be provided with sacrifice layer release window, sacrifice layer release window is located at bottom electrode layer, top electrode layer border and air chamber side
Between boundary, the depth of the air chamber is 200nm-3 μm, and the bottom electrode layer and top electrode layer are respectively provided with 1-10 layer graphitic carbons
Layer.
As shown in figure 11, the top view of device is as shown in figure 12 for piezoelectric film bulk acoustic wave resonator section of the present invention,
Its structure includes 1 substrate, 2 bottom electrode layers, 3 air chambers, 4 piezoelectric layers, 5 top electrode layers, 6,7 sacrifice layer release apertures.
The specific embodiment of the invention is as follows：
1. the photoresist in correspondence sacrifice layer region is removed using the method for photoetching in surface of silicon, expose silicon substrate.
Using the method silicon substrate that exposes of etching of dry etching, etching depth can be between 200nm-3 μm, as shown in Figure 4.It is described
Surface of silicon can be（100）、（110）Or（111）Orientation.
2., using the method deposited amorphous sacrificial silicon layer of electron beam evaporation, the sacrificial layer thickness can be controlled in 300nm-3 μ
m.The sacrifice layer is more than 100 °C in temperature, and sedimentation rate is less than 5/s, and base vacuum is less than 10-3Under conditions of Pa, deposition is obtained.
Sacrificial layer thickness by sedimentation time control, as shown in Figure 5.
3. using remaining photoresist on acetone solution substrate, attachment amorphous thereon while photoresist is dissolved
Silicon film is also removed, and leaves a little burr on device surface, as shown in Figure 6.
4. a little burr for grinding away device surface using chemically mechanical polishing obtains smooth device surface, such as Fig. 7 institutes
Show.Polishing fluid used is SiO2Suspension polishing liquid, milling time 5-10min, rotating speed are controlled in 30-60r/min.
5. using the method deposited graphite alkene electrode layer of molecular beam epitaxy.This layer of electrode has 1-10 layer graphite carbon-coatings, its
Thickness is 5-10nm.The Graphene electrodes layer is more than 500 °C in temperature, and graphite evaporation rate is less than 0.3nm/min, base vacuum
Less than 5 × 10-5Prepare under the conditions of Pa.Meanwhile, hearth electrode figure is etched, as shown in Figure 8.
6. the AlN piezoelectric layers of one layer of c-axis orientation are grown on Graphene electrodes layer.The AlN piezoelectric layers are in ammonia concentration>
40%, power density>9W/cm2, temperature>Obtained by the method deposition of rf magnetron sputtering under 200 °C.Piezoelectric layer thickness is according to reality
Border needs the frequency of device to determine.The piezoelectric layer border is more than sacrifice layer border and exposed portion bottom electrode layer.Carved using wet method
The method of erosion etches the figure of piezoelectric layer, while the release window of device sacrifice layer is also etched, release window is located at
Between boundary electrode and air chamber border, as shown in Figure 9.
7. using the method deposition device top electrode layer of step 5 molecular beam epitaxy, and top electrode layer figure is etched, such as
Shown in Figure 10.
8. releasing sacrificial layer drying, as shown in figure 11.
Embodiment described above only expresses the specific embodiment of the application, and its description is more concrete and detailed, but and
Therefore the restriction to the application protection domain can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, on the premise of conceiving without departing from technical scheme, some deformations and improvement can also be made, these belong to this
The protection domain of application.
Claims (1)
1. a kind of preparation method of piezoelectric film bulk acoustic wave resonator, its structure include substrate, air chamber, bottom electrode layer, piezoelectricity
Layer and top electrode layer, it is characterised in that：On substrate, top surface arranges fluted and bottom electrode layer, the groove and bottom electrode layer thereon
The air chamber of device is formed, bottom electrode layer has smooth border with the contact surface of air chamber, arranges piezoelectric layer on bottom electrode layer,
Top electrode layer is set on piezoelectric layer, and the bottom electrode layer and top electrode layer are graphene layer, it is characterised in that including following
Step：
A. in surface of silicon, the photoresist in correspondence sacrifice layer region is gone by rotary coating photoresist using the method for photoetching
Fall, expose silicon substrate, the silicon substrate exposed using the method etching of dry etching, etching depth is 200nm-3 μm, obtains sacrificial
Domestic animal layer groove, the sacrifice layer recess edge are smoothed；
B. using the method deposited amorphous sacrificial silicon layer of electron beam evaporation, the sacrificial layer thickness is 300nm-3 μm, the sacrifice layer
It is more than 100 DEG C in temperature, sedimentation rate is less than 5/S, base vacuum is less than 10-3Under conditions of Pa, deposition is obtained, sacrifice layer
Thickness is by sedimentation time control；
C. using remaining photoresist on acetone solution substrate, attachment amorphous silicon film layer thereon while photoresist is dissolved
Also it is removed, grinds away a little burr remained on sacrifice layer using CMP and obtain smooth non-crystalline silicon sacrificial layer surface；
D. using the method deposited graphite alkene electrode layer of molecular beam epitaxy, this layer of electrode has 1-10 layer graphite carbon-coatings, its thickness
<10nm, the Graphene electrodes layer are more than 500 DEG C in temperature, and graphite evaporation rate is less than 0.3nm/min, and base vacuum is less than 5
×10-5Prepare under the conditions of Pa, meanwhile, etch hearth electrode figure；
E. the AlN piezoelectric layers of one layer of c-axis orientation are grown on Graphene electrodes layer, and the AlN piezoelectric layers are in ammonia concentration>40%, work(
Rate density>9W/cm2, temperature>Obtained by the method deposition of rf magnetron sputtering at 200 DEG C, the piezoelectric layer border is more than sacrifice
Layer border and exposed portion bottom electrode layer, etch the figure of piezoelectric layer using the method for wet etching, while device sacrifice
The release window of layer is also etched, and release window is located between boundary electrode and air chamber border；
F. using the method deposition device top electrode layer of step d molecular beam epitaxy, and etch top electrode layer figure；
G. dispensing device sacrifice layer drying.
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| CN115296636A (en) * | 2022-03-22 | 2022-11-04 | 中国科学院上海微系统与信息技术研究所 | Preparation method of acoustic wave resonator, structure of acoustic wave resonator and filter |
| CN115333497A (en) * | 2022-06-28 | 2022-11-11 | 广州市艾佛光通科技有限公司 | Preparation method of film cavity acoustic wave resonator and film cavity acoustic wave resonator |
| WO2024020769A1 (en) * | 2022-07-26 | 2024-02-01 | 京东方科技集团股份有限公司 | Bulk acoustic resonator and preparation method therefor, and electronic device |
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| CN1373556A (en) * | 2001-03-01 | 2002-10-09 | 安捷伦科技有限公司 | Improved method for mfg. thin film sound resonator and thin film sound resonator structure of carrying out said method |
| CN103283145A (en) * | 2010-12-30 | 2013-09-04 | 爱普科斯公司 | Electronic component and method for producing the electronic component |
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| CN1373556A (en) * | 2001-03-01 | 2002-10-09 | 安捷伦科技有限公司 | Improved method for mfg. thin film sound resonator and thin film sound resonator structure of carrying out said method |
| CN103283145A (en) * | 2010-12-30 | 2013-09-04 | 爱普科斯公司 | Electronic component and method for producing the electronic component |
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