A kind of radio frequency declines capacitive fingerprint acquisition chip and acquisition method
Technical field
The present invention relates to IC design field, more particularly to a kind of radio frequency declines and capacitive fingerprint acquisition chip and its adopts
Set method.
Background technique
Requirement with people to information security is higher and higher, and live biometric certification and identification are more and more
It applies in daily life.Finger print identifying, which is used as in biological characteristic authentication, has very high reliability and cost performance,
Have become the mainstream of current biological certification.At the same time, fingerprint collecting technology also high speed development, one more inexpensive, more
Fast speed, small size, low-power consumption, high dynamic range and high investigation depth fingerprint sensor will capture huge market, because
This, the fingerprint sensor having the above advantages becomes the emphasis of current research, wherein capacitive fingerprint sensing device becomes current
One of main product.
With gradualling mature for fingerprint sensing technology, the advanced fingerprint sensing technology that Apple Inc. releases has been applied to shifting
It starts in machine and other electronic products, or even Chinese third generation ID also need to carry out finger print information using fingerprint sensing technology
Registration.It is not difficult to predict, fingerprint identification technology quickly and can be widely applied to our daily lifes, especially be applied to shifting
In dynamic equipment.
At the same time, necessarily the requirement to the performance of fingerprint sensor can become higher and higher to high demand.One good finger
Line identifying system can not only solve deficiency present in fingerprint sensor from algorithm, more should fundamentally solve to sense
The acquisition quality problem of device.That is, being applied to the fingerprint sensor in mobile device, there must be very high detection deep
Degree to meet application requirement, be preferably capable of fingerprint sensor being placed under touch panel or being integrated into touch panel without
Influence the appearance of its performance and mobile device.
Existing country's fingerprint sensor is all the fingerprint sensor of purely capacitive formula, fingerprint residues and other spots residual
It is influenced for RF type fingerprint sensor very greatly, and its investigation depth is no more than the dielectric of 20um thickness.Such as
China Patent No. ZL021059608 and application No. is 201220476953 to be each provided with a kind of capacitance type fingerprint reading manner, by
In finger direct contact surface to sensing array sensing electrode between insulating layer be the inorganic chemical for only having several um by thickness
Object is constituted, very poor so as to cause its hydrophobicity, anti-residual, crushing resistance and antistatic property.
It will be apparent to those skilled in the art that the electrostatic protection that reach 20KV or more then requires on sensor sensing electrode
The thickness of dielectric is greater than 20um.Fingerprint sensor only tri- companies of AUTHENTEC, FPC and VALIDITY, existing foreign countries
RF type fingerprint collecting is realized, the RF type acquisition principle of AUTHENTEC and FPC Liang Ge company is substantially homologous, as the U.S. is special
Sharp US6512381 realizes RF type fingerprint collecting, anti-fingerprint can remain and other spots residual, investigation depth well
Only tens um detects one or more fingerprint pixels since a radio-frequency pulse is corresponding, in the stronger application of certain radio-frequency radiations
Its anti-interference ability of occasion is poor.
When this radio-frequency pulse is interfered, a pixel or multiple pixels will be interfered.VALIDITY company
Sensor its use typical structure (Chip-on-flex, abbreviation COF) principle of LCD MODULE, the sensor
It can only be that slideably, and the fingerprint sensor of slidingtype is in user experience effect that working principle itself, which limits sensor,
On be very poor so that such sensor cannot be used widely.
For example, referring to Fig. 1, Fig. 1 is the sensing unit structural schematic diagram of the fingerprint sensor of the prior art.As schemed
Show, existing sensing unit 1 includes: the sense capacitance 11 that is formed by finger 10 with sensing electrode, by sensing electrode and amplifier
Edge capacitance 12, amplifier 13 and the reseting switch circuit 14 that output electrode is formed;The sensing unit 1 is believed by detecting by radio frequency
Numbers 15 radiofrequency signal sizes for handling digital reflex issued, the signal is after the amplification of capacitance integral amplifying circuit by subsequent circuit
It is further processed, the radiofrequency signal of varying strength is detected according to the difference of 11 value of sense capacitance, to realize fingerprint collecting.It should
(it is greater than 200u) when method is thick compared with the medium between sensing electrode for finger 10, needs to be corrected sensing unit 1,
And correction difficulty is larger, moreover, the corresponding one or more pixels of a RF pulse signal of this method, such radiofrequency signal
Part sensing unit will be by serious interference when by radiation interference.
Therefore, existing fingerprint sensor, either capacitive or RF type fingerprint sensor are all detection fingers
The paddy ridge capacitance difference that valley line, crestal line and sensor sensing electrode are formed, it is that can be detected for the fingerprint sensor of the existing country
In the number of levels of several fF, paddy ridge capacitance difference that can be detected for the fingerprint sensor of existing foreign countries exist paddy ridge capacitance difference
The number of levels of 0.1fF, existing domestic and international fingerprint sensor are not met by the particular/special requirement of mobile device.
Summary of the invention
It declines capacitive fingerprint acquisition chip and its acquisition side in order to solve the above technical problem, the present invention provides a kind of radio frequency
Method, i.e., do not influence that sensor is placed under touch-control glass panel in the case where mobile device appearance and still be able to sense clearly
Fingerprint image.The present invention is able to detect that by improving the structure of sensing unit and increasing the realization of sensing unit distortion correction circuit
Paddy ridge capacitance difference in 0.005fF hereinafter, the touch panel of 0.5mm thickness can be placed it in by improved fingerprint sensor
Under still be able to sense clearly fingerprint image.
To achieve the above object, technical scheme is as follows:
A kind of radio frequency declines capacitive fingerprint acquisition chip, including L with reference to sensing unit, M*N sensing unit formation
Two-dimentional sensing unit array, the radiofrequency signal generation circuit to generate radiofrequency signal, RF driven electrode, sensing unit array
Controller, analog-to-digital conversion array, sensing unit distortion correction circuit, fingerprint image buffer, digital analog converter, fingerprint image are defeated
Controller and image-signal processor out;The radiofrequency signal that RF driven electrode generates the radiofrequency signal generation circuit is sent out
It is mapped to the finger for touching fingerprint sensor;Sensing unit array control unit is turned on and off needed for sensing unit for providing
Charge and discharge clock signal needed for the switching signal and offer sensing unit of source bias;Analog-to-digital conversion array is turned by N number of modulus
Parallel operation is constituted side by side, and the sense capacitance that the sensing unit array control unit detects is converted into fingerprint image gray value;
Sensing unit distortion correction circuit, using L with reference to the collected data of sensing unit corrected as benchmark each sensing unit it
Between deviation;Fingerprint image buffer is used to store the fingerprint image sum of the grayscale values sensing unit deviation currently converted
Correction data;Digital analog converter controls the gain of the analog-to-digital conversion array;Fingerprint image o controller, to transmit
Fingerprint image data;Image-signal processor receives the fingerprint image data that the fingerprint image o controller is sent, root
According to the fingerprint image data judge its true or false and it is normal whether and make corresponding processing, wherein N be 1 to 150 it is whole
Number, the integer that M is 2 to 300, L are the integer less than N*M, are directly covered in the insulating layer on acquisition chip circuit as institute
State the dielectric layer of sense capacitance in sensing unit.
Preferably, each described sensing unit includes to be formed by single sense by the top-level metallic of integrated circuit technology
Electrode, sense capacitance dielectric layer, reference capacitance and activated amplifier etc.;Sense capacitance dielectric layer, by being directly covered in top layer
The insulating layer with a thickness of 0.1um~150um on metal is constituted, the single sense electrode and finger and sense capacitance medium
Layer forms single sense capacitor;Activated amplifier, is connected to unit gain buffer, and input passes through switch connection sensing
Electrode, output pass through switch connection bucking electrode;List is formed by by the metal layer except integrated circuit technology top-level metallic
A bucking electrode, the single bucking electrode and single sense electrode form single mask capacitor, and the single bucking electrode will
Single sense electrode and other electrode isolations, so that the parasitic capacitance formed with single sense electrode is zero;By integrated circuit work
Any metal layer of skill is formed by single correcting electrode, and the single correcting electrode and single sense electrode form single correction electricity
Hold;The single enhancing electrode formed by any metal layer of integrated circuit technology, the single enhancing electrode and single sense electrode
Single enhancing capacitor is formed, enhancing capacitor is for enhancing collection effect;And multiple switch circuit, control reference capacitance, sense
It surveys capacitor, enhancing capacitor and corrective capacity and carries out charge and discharge and equalizing charge.
Preferably, the sensing unit distortion correction circuit also includes forward-backward counter array, multiplier array, sensing
Unit deviation statistics circuit and sensing unit deviation correction factor counting circuit, wherein the forward-backward counter array computation
The deviation of the sensing unit and reference sensing unit;The sensing unit deviation statistics circuit counts the absolute value of the bias
Average value;The number that the sensing unit deviation correction factor counting circuit inputs the input of the digital analog converter and host computer
The average value of value and the absolute value of the bias carries out mapping calculation and obtains correction factor;The multiplier array by the deviation with
The correction factor is multiplied, and exports correction data of the result as the sensing unit distortion correction circuit.The mapping meter
The method of calculation are as follows: the correction factor is directly obtained by host computer, and the correction factor is directly equal to what host computer was calculated
Correction factor;The method that host computer calculates correction factor is as follows:
K1=B*N1*E1/H1;
Wherein, K1 is the correction factor that host computer is calculated;
B is a fixed coefficient;
N1 is the numerical value that the digital analog converter for the chip that host computer is read by instruction inputs;
E1 is the average value that host computer reads the sensing unit and the absolute value of the bias with reference to sensing unit by instruction;
H1 is the assembly average by testing the actual sensed unit deviation that a large amount of chips obtain;
Or the correction factor is obtained by the chip interior, the calculation method of correction factor is as follows:
K2=B*N2*E2/H2;
Wherein, K2 is the correction factor that the chip is calculated;
B is a fixed coefficient;
N2 is the numerical value that the digital analog converter of the chip inputs;
The deviation of sensing unit distortion correction circuit is calculated described in E2 sensing unit and reference sensing unit is absolute
The average value of value;
H1 is that the statistics by testing the actual sensed unit deviation that a large amount of chips obtain inputted by host computer is put down
Mean value.
Another object of the present invention is to provide a kind of to be declined the fingerprint collecting side of capacitive fingerprint acquisition chip using above-mentioned radio frequency
Method, the fingerprint collecting method are based on the radiofrequency signal generation circuit, the RF driven electrode and have charge pump circuit
The sensing unit of structure realizes that finger print information to the conversion of electric signal, specifically comprises the following steps: by charge pump principle
Step S1: when finger is placed on two-dimentional sensing unit array, the sensing unit array control unit selects institute
State effective row sensing unit of a line sensing unit as current acquisition fingerprint in two-dimentional sensing unit array;
Step S2: the sensing unit array control unit initializes the currently active row sensing unit;
Step S3: the sensing unit array control unit carries out fingerprint collecting to the currently active row sensing unit;
Step S4: the sensing unit array control unit carries out the collected finger print information of the currently active row sensing unit
Correction;Finger print information after the correction of the currently active row sensing unit is taken away;
Step S5: the sensing unit array control unit selects next line sensing unit as the effective of current acquisition fingerprint
Row sensing unit, sequence complete initialization, fingerprint collecting, finger print information correction and read finger print information Four processes, Zhi Daosuo
State effective row sensing unit that sensing unit array control unit selects last line sensing unit as current acquisition fingerprint, sequence
It completes initialization, fingerprint collecting, finger print information correction and reads finger print information Four processes.
Preferably, the step S2 is specifically included:
Step S21: the sensing unit array control unit exports the first pulse signal to the currently active row sensing unit, institute
It states pulse signal to charge to the reference capacitance of the currently active row sensing unit during pulse width, makes reference capacitance both ends product
The quantity of electric charge that tired value is C1*V1, the C1 are the capacitance of reference capacitance, and the V1 is the voltage value to charge to reference capacitance;
Step S22: the sensing unit array control unit exports the second pulse signal to the currently active row sensing unit, institute
Stating the radiofrequency signal that pulse signal and the radiofrequency signal generation circuit generate makes the corrective capacity of the currently active row sensing unit
Electric discharge makes the quantity of electric charge at its both ends become zero;The pulse signal makes the enhancing capacitor charging of the currently active row sensing unit, makes it
Both ends accumulating value is the quantity of electric charge of C2*V2, and the C2 is the capacitance for enhancing capacitor, and the V2 is to the electricity of enhancing capacitor charging
Pressure value;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S23: the radiofrequency signal that the radiofrequency signal generation circuit generates first makes the Partial charge of the enhancing capacitor
Being transferred on the corrective capacity and being connected to the output of the unit gain buffer of the currently active row sensing unit currently has
The bucking electrode of row sensing unit is imitated, the sensing unit array control unit output third pulse signal is sensed to the currently active row
Unit, the third pulse signal make the reference capacitance, enhancing capacitor and corrective capacity carry out equalizing charge again;
Step S24: the second pulse signal and third arteries and veins of the sensing unit array control unit output fixed cycles number
Signal is rushed to the currently active row sensing unit, the radiofrequency signal generation circuit generates the radio frequency letter of identical fixed cycles number
Number, the phase that the second pulse signal and third pulse signal of the fixed cycles number are generated with the radiofrequency signal generation circuit
With the radiofrequency signal of fixed cycles number, subtract the voltage difference at the reference capacitance both ends of the currently active row sensing unit gradually
Small, the voltage difference at the reference capacitance both ends is locked after circulation terminates, wherein the fixed cycles number in initialization procedure can
It is set as 2 N " power, the integer that N " is 2 to 8;The voltage differential signal is converted into currently by the analog-to-digital conversion array simultaneously
The initialization value of effective row sensing unit;
Step S25: being passed to fingerprint image buffer for the initialization value of the currently active row sensing unit, completes current
The initialization procedure of effective row sensing unit.
Preferably, the step S3 is specifically included:
Step S31: after initialization timing, the sensing unit array control unit exports the first pulse signal again and arrives
The currently active row sensing unit, the pulse signal fill the reference capacitance of the currently active row sensing unit during pulse width
Electricity, makes the reference capacitance both ends accumulate certain quantity of electric charge, and certain quantity of electric charge can be with the quantity of electric charge phase of initialization
Together;
Step S32: the sensing unit array control unit exports the second pulse signal again and senses list to the currently active row
The radiofrequency signal that member, the pulse signal and the radiofrequency signal generation circuit generate makes the sensing of the currently active row sensing unit
Capacitor and corrective capacity electric discharge, make the quantity of electric charge at its both ends become zero, the pulse signal makes the increasing of the currently active row sensing unit
Forceful electric power capacity charge makes the quantity of electric charge of its both ends accumulating value C2*V2, and wherein C2 is the capacitance for enhancing capacitor, and V2 is to enhancing
The voltage value of capacitor charging;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S33: the radiofrequency signal that the radiofrequency signal generation circuit generates is by the RF driven electrode to outgoing
It penetrates, finger, which contacts the radiofrequency signal that the radiofrequency signal generation circuit generates after the RF driven electrode, first makes the enhancing electric
The Partial charge of appearance, which is transferred to, on the sense capacitance and corrective capacity and makes the unit gain of the currently active row sensing unit slow
The output of storage is connected to the bucking electrode of the currently active row sensing unit, and the sensing unit array control unit exports again
For three pulse signals to the currently active sensing unit, the third pulse signal makes the reference capacitance, sense capacitance, enhancing electricity again
Hold and corrective capacity carries out equalizing charge;
Step S34: the sensing unit array control unit exports the second pulse signal and of another fixed cycles number
For three pulse signals to the currently active row sensing unit, the radiofrequency signal that the radiofrequency signal generation circuit generates passes through the radio frequency
Driving electrodes launch outward the radiofrequency signal of identical fixed cycles number, make the reference capacitance of the currently active row sensing unit
The voltage difference at both ends gradually reduces, and the voltage difference at the reference capacitance both ends is locked after circulation terminates, wherein the fixation follows
M " the power that ring number is 2, the integer that M " is 4 to 16;The voltage differential signal is converted by the analog-to-digital conversion array simultaneously
The currently active collected finger print information of row sensing unit;
Step S35: being passed to fingerprint image buffer for the currently active collected finger print information of row sensing unit, complete
At the fingerprint collecting process of the currently active row sensing unit.
Preferably, the step S4 is specifically included:
Step S41: the currently active row sensing unit is after completing initialization and fingerprint collecting process, the sensing unit battle array
Column controller output the first correction timing, by the initial value of the currently active row sensing unit, the initial value with reference to sensing unit, number
It is inclined that the numerical value of the input of mode converter and host computer input is input to the sensing unit distortion correction circuit calculating sensing unit
The correction data of difference, and the sensing unit correction for drift data are stored in fingerprint image buffer;
Step S42: the second correction of sensing unit array control unit output timing senses the currently active row single
The collected finger print information of member subtracts the information in fingerprint after the sensing unit correction for drift data are corrected;
Step S43: the information in fingerprint after the correction of the currently active row sensing unit is stored in the fingerprint image and is delayed
In storage, the information in fingerprint after the correction is taken away under the control of host computer.
To achieve the above object, another technical solution of the invention is as follows:
A kind of radio frequency declines capacitive fingerprint acquisition chip, including L refers to sensing unit, M*N multiple-sensing unit shape
At two-dimentional sensing unit array, the radiofrequency signal generation circuit to generate radiofrequency signal, RF driven electrode, compound sensing
Cell array controller, analog-to-digital conversion array, multiple-sensing unit distortion correction circuit, fingerprint image buffer, digital-to-analogue conversion
Device, fingerprint image o controller and image-signal processor;The multiple-sensing unit is by multiple compound sub- sensing units
Composition;RF driven electrode is by emission of radio frequency signals that the radiofrequency signal generation circuit generates to touching fingerprint sensor
Finger;Multiple-sensing unit array control unit, for provide be turned on and off sensing unit needed for source bias switch letter
Number and provide multiple-sensing unit needed for charge and discharge clock signal;Analog-to-digital conversion array is made of side by side N number of analog-digital converter,
Its by the multiple-sensing unit array detection to sense capacitance be converted into fingerprint image gray value;Multiple-sensing unit deviation
Correcting circuit, using a deviation corrected as benchmark between each multiple-sensing unit with reference to the collected data of sensing unit of L;
Fingerprint image buffer is used to store the fingerprint image sum of the grayscale values multiple-sensing unit deviation correction number currently converted
According to;Digital analog converter controls the gain of the analog-to-digital conversion array;Fingerprint image o controller is to transmission fingerprint image
Data;Image-signal processor receives the fingerprint image data that the fingerprint image o controller is sent, according to the fingerprint
Image data judge its true or false and it is normal whether and make corresponding processing, wherein the integer that N is 1 to 150, M are 2 to 300
Integer, L is integer less than N*M, is directly covered in the insulating layer on acquisition chip circuit as the compound sensing singly
The dielectric layer of sense capacitance in member.
Preferably, each described multiple-sensing unit includes that be formed by N ' by the top-level metallic of integrated circuit technology a
Sensing electrode, sense capacitance dielectric layer, a sense capacitance of N ' and multiplexing reference capacitance etc.;Sense capacitance dielectric layer, by direct
The insulating layer with a thickness of 0.1um~150um on the top-level metallic is covered in constitute;A sensing electrode of the N ' and finger
And sense capacitance dielectric layer forms a sense capacitance of N ';It is a by the formed N ' of metal layer except integrated circuit technology top-level metallic
Bucking electrode, a bucking electrode of the N ' and a sensing electrode of N ' form N number of mask capacitor;By any metal of integrated circuit technology
A correcting electrode of N ' that layer is formed, a correcting electrode of the N ' and a sensing electrode of N ' form a corrective capacity of N ';By integrated electricity
A enhancing electrode of the formed N ' of any metal layer of road technique, a enhancing electrode of the N ' and a sensing electrode of N ' form a enhancing of N '
Capacitor, enhancing capacitor is for enhancing collection effect;N ' organizes switching circuit;It is multiplexed activated amplifier, multiplexing unit is connected to and increases
Beneficial buffer, input pass through N ' group switch connection a sensing electrode of N ', and output passes through a shielding electricity of a switch connection N ' of N '
Pole;A sensing electrode of the N ', sense capacitance dielectric layer, multiplexing reference capacitance, a mask capacitor of N ', a corrective capacity of N ', N '
A enhancing capacitor, N ' group switching circuit and multiplexing activated amplifier constitute a sub- sensing unit of N ';Wherein, each sub- sensing unit
Include: a sensing electrode, sense capacitance dielectric layer, a mask capacitor, a corrective capacity, an enhancing capacitor, one group
Switch, multiplexing reference capacitance and multiplexing activated amplifier, wherein multiplexing reference capacitance and multiplexing activated amplifier are sharing unit;
It is described multiplexing reference capacitance and be multiplexed activated amplifier be placed on by a sensing electrode institute forming region of the N ' lower section or
It is placed in by the side of a sensing electrode institute forming region of the N ', the marginal position of the marginal edge position from the region
Vertical range be less than 500um.
Preferably, the sensing unit distortion correction circuit also includes forward-backward counter array, multiplier array, sensing
Unit deviation statistics circuit and sensing unit deviation correction factor counting circuit, wherein the forward-backward counter array computation
The deviation of the multiple-sensing unit and reference sensing unit;It is absolute that the sensing unit deviation statistics circuit counts the deviation
The average value of value;The sensing unit deviation correction factor counting circuit inputs the input of the digital analog converter and host computer
Numerical value and the absolute value of the bias average value carry out mapping calculation obtain correction factor;The multiplier array will be described inclined
It is poor to be multiplied with the correction factor, export correction data of the result as the multiple-sensing unit distortion correction circuit.
Another object of the present invention is to provide a kind of to be declined the fingerprint collecting side of capacitive fingerprint acquisition chip using above-mentioned radio frequency
Method, the fingerprint collecting method are based on the radiofrequency signal generation circuit, the RF driven electrode and have charge pump circuit
The multiple-sensing unit of structure realizes that finger print information to the conversion of electric signal, specifically comprises the following steps: by charge pump principle
Step S1 ' multiple-sensing unit array control unit selects a line multiple-sensing unit in two-dimentional sensing unit array
Effective row sensing unit of the sub- sensing unit as current acquisition fingerprint;
Step S2 ' multiple-sensing unit array control unit initializes the currently active row sensing unit;
The currently active row sensing unit of step S3 ' multiple-sensing unit array control unit carries out fingerprint collecting;
Step S4 ' multiple-sensing unit array control unit to the currently active collected finger print information of row sensing unit into
Row correction;
Finger print information after the currently active row sensing unit correction of step S5 ' reading;
Step S6 ' multiple-sensing unit array control unit successively selects another sub- sensing unit of effective row sensing unit to make
For the currently active row sensing unit, step S2 '~step S5 ' is repeated until completing the initialization of all sub- sensing units, referring to
Line acquisition, finger print information correction and finger print information read Four processes;
Step S7 ' multiple-sensing unit array control unit successively selects the compound sense of next line in two-dimentional sensing unit array
Survey effective row sensing unit of the sub- sensing unit of unit as current acquisition fingerprint, repeat step S2 '~step S6 ' up to
It completes entire two-dimentional sensing unit array and four is read to the initialization of fingerprint, fingerprint collecting, finger print information correction and finger print information
A process.
Preferably, the step S2 ' is specifically included:
Step S21 ': the multiple-sensing unit array control unit exports the first pulse signal and senses to the currently active row
Unit, the pulse signal make the multiplexing reference capacitance of the currently active row sensing unit charge during pulse width, make it
Both ends accumulating value is the quantity of electric charge of C1*V1, and the C1 is the capacitance for being multiplexed reference capacitance, and the V1 is to give multiplexing reference capacitance
The voltage value of charging;
Step S22 ': the multiple-sensing unit array control unit exports the second pulse signal and senses to the currently active row
The radiofrequency signal that unit, the pulse signal and the radiofrequency signal generation circuit generate makes the currently active row sensing unit
Corrective capacity electric discharge, makes the quantity of electric charge at its both ends go to zero;The pulse signal makes the enhancing of the currently active row sensing unit
Capacitor charging makes the quantity of electric charge of its both ends accumulating value C2*V2, and the C2 is the capacitance for enhancing capacitor, and the V2 is to increasing
The voltage value of forceful electric power capacity charge;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S23 ': the radiofrequency signal that the radiofrequency signal generation circuit generates first makes the Partial charge of the enhancing capacitor
It is transferred on the corrective capacity and is connected to the output of the multiplexing unit gain buffer of the currently active row sensing unit
The bucking electrode of the currently active row sensing unit, the multiple-sensing unit array control unit export third pulse signal to working as
Preceding effective row sensing unit, the third pulse signal make again the multiplexing reference capacitance, enhancing capacitor and corrective capacity into
Row equalizing charge;
Step S24 ': the second pulse signal of multiple-sensing unit array control unit output fixed cycles number and the
For three pulse signals to the currently active row sensing unit, the radiofrequency signal generation circuit generates penetrating for identical fixed cycles number
Frequency signal, the second pulse signal and third pulse signal and the radiofrequency signal generation circuit of the fixed cycles number generate
Identical fixed cycles number radiofrequency signal, make the currently active row sensing unit multiplexing reference capacitance both ends electricity
Pressure difference gradually reduces, and the voltage difference at the multiplexing reference capacitance both ends is locked after circulation terminates, wherein in initialization procedure
Fixed cycles number may be configured as 2 N " power, the integer that N " is 2 to 8;The analog-to-digital conversion array is by the voltage difference simultaneously
Signal is converted into the initialization value of the currently active row sensing unit;
Step S25 ': the initialization value of the currently active row sensing unit is passed to fingerprint image buffer, is completed
The initialization procedure of the currently active row sensing unit.
Preferably, the step S3 ' is specifically included:
Step S31 ': after initialization timing, the multiple-sensing unit array control unit exports the first pulse again
For signal to the currently active row sensing unit, the pulse signal makes answering for the currently active row sensing unit during pulse width
It is charged with reference capacitance, the multiplexing reference capacitance both ends is made to accumulate certain quantity of electric charge, certain quantity of electric charge can be with
The quantity of electric charge of initialization is identical;
Step S32 ': the multiple-sensing unit array control unit exports the second pulse signal to the currently active row again
The radiofrequency signal that sensing unit, the pulse signal and the radiofrequency signal generation circuit generate keeps the currently active row sensing single
Sense capacitance and the corrective capacity electric discharge of member, make the quantity of electric charge at its both ends go to zero, the pulse signal makes the currently active row
The enhancing capacitor charging of sensing unit makes the quantity of electric charge of its both ends accumulating value C2*V2, and wherein C2 is the capacitor for enhancing capacitor
Value, V2 are to the voltage value of enhancing capacitor charging;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S33 ': the radiofrequency signal that the radiofrequency signal generation circuit generates is by the RF driven electrode to outgoing
It penetrates, finger, which contacts the radiofrequency signal that the radiofrequency signal generation circuit generates after the RF driven electrode, first makes the enhancing electric
The Partial charge of appearance is transferred to the multiplexing unit on the sense capacitance and corrective capacity and making the currently active row sensing unit
The output of gain buffer is connected to the bucking electrode of the currently active row sensing unit, the multiple-sensing unit antenna array control
Device exports third pulse signal to the currently active row sensing unit again, and the third pulse signal again refers to the multiplexing
Capacitor, sense capacitance, enhancing capacitor and corrective capacity carry out equalizing charge;
Step S34 ': the multiple-sensing unit array control unit exports the second pulse signal of another fixed cycles number
With third pulse signal to the currently active row sensing unit, the radiofrequency signal that the radiofrequency signal generation circuit generates passes through institute
The radiofrequency signal that RF driven electrode launches outward identical fixed cycles number is stated, the currently active row sensing unit is made
The voltage difference at multiplexing reference capacitance both ends gradually reduces, and the voltage difference at the multiplexing reference capacitance both ends is locked after circulation terminates
It is fixed, wherein the M " power that the fixed cycles number is 2, the integer that M " is 4 to 16;The analog-to-digital conversion array will be described simultaneously
Voltage differential signal is converted into the currently active collected finger print information of row sensing unit;
Step S35 ': the currently active collected finger print information of row sensing unit is passed to fingerprint image caching
Device completes the fingerprint collecting process of the currently active row sensing unit.
Preferably, the step S4 ' is specifically included:
Step S41 ': the currently active row sensing unit is after completing initialization and fingerprint collecting process, the compound sense
Cell array controller output the first correction timing is surveyed, by the initial value of the currently active row sensing unit, with reference to sensing unit
Initial value, the digital analog converter the numerical value of input and host computer input be input to multiple-sensing unit deviation correction
The sub- sensing unit correction for drift data of circuit counting, and the sub- sensing unit correction for drift data are stored in fingerprint image
As in buffer;
Step S42 ': the second correction of multiple-sensing unit array control unit output timing, by effective row sense
It surveys the collected finger print information of unit and subtracts the letter of the fingerprint image after the sub- sensing unit correction for drift data are corrected
Breath;
Step S43 ': the information in fingerprint after the correction of the currently active row sensing unit is stored in the fingerprint image
In buffer, the information in fingerprint after the correction is taken away under the control of host computer.
It can be seen from the above technical proposal that the present invention remains to solve above-mentioned finger, anti-interference, antistatic and detection
Depth problem provides a kind of radio frequency and declines capacitive fingerprint acquisition chip, it is intended to is single by improving sensing on the basis of the prior art
The structure and increase sensing unit distortion correction circuit of member realize the micro- capacitance detecting of finger, are resisted by special radio frequency method
Fingerprint residues, other spots residual and the interference of other radio-frequency radiations, and the investigation depth by improving sensor can be to avoid quiet
Discharge of electricity (Electro Static Discharge, abbreviation ESD) effect and will sensor insertion touch capacitance plate under.
Detailed description of the invention
Fig. 1 is the sensing unit electrical block diagram of fingerprint sensor in the prior art
Fig. 2 is the circuit structure diagram that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Fig. 3 is the encapsulating structure diagrammatic cross-section that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Fig. 4 is the sensing unit electrical block diagram that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Fig. 5 is that the multiple-sensing unit circuit structure that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment shows
It is intended to
[symbol description in figure]
1, the sensing unit of the prior art
10, finger
11, the sense capacitance of the prior art
12, the fringing capacitance of the prior art
13, amplifier
14, reset switch
15, RF signal used in the prior art
2, radio frequency declines capacitive fingerprint acquisition chip
20, sensing unit array
201, sensing unit
202, with reference to sensing unit
21, sensing unit array control unit
22, column ADC array
221, analog-digital converter (ADC)
23., sensing unit distortion correction circuit
24, fingerprint image buffer
25, fingerprint image o controller
26, fingerprint image processor
27, digital analog converter (DAC)
28, RF signal generating circuit
29, RF driven electrode
3, fingerprint sensor cross section
30, insulating substrate
31, nonconductive adhesive
32a, RF driven electrode
32b, RF driven electrode
33, sensing unit
34, buffering spacer
35, insulating layer
40, sense capacitance
401, finger skin corium
402, sensing electrode
410,411,412,413 switching circuit
420, enhance capacitor
421, sensing unit deviation corrective capacity
422, mask capacitor
423, reference capacitance
430,431 power supply
44, amplifier
45, sensing unit control bus
50a, 50b sense capacitance
501, finger skin corium
502a, 502b sensing electrode
510a, 511a, 512a, 513a, 510b, 511b, 512b, 513b switching circuit
520a, 520b enhance capacitor
521a, 521b sensing unit deviation corrective capacity
522a, 522b mask capacitor
523, it is multiplexed reference capacitance
530a, 531a, 530b, 531b power supply
54, it is multiplexed amplifier
55a, 55b sensing unit control bus
Specific embodiment
Exemplary embodiment is described in detail in conjunction with the accompanying drawings, These characteristics of the invention and advantage will become brighter
It is aobvious, in the accompanying drawings, is adopted between each attached drawing and similar element is designated with like reference numerals.The attached drawing is demonstration
Rather than it is drawn to scale.
With reference to the accompanying drawing 2 to 5, specific embodiments of the present invention will be described in further detail.The present invention will lead to
It crosses embodiment to be illustrated, but thinking of the invention is not limited to the embodiment of the present invention.
Referring to Fig. 2, Fig. 2 is that radio frequency of the present invention declines the electrical block diagram of capacitive fingerprint chip.As shown, should
Radio frequency decline capacitive fingerprint chip 2 include two-dimentional sensing unit array 20 (for example, M*N two dimension sensing unit array), it is optional more
A reference sensing unit 202 (for example, L refer to sensing unit), sensing unit array control unit 21, analog-to-digital conversion (column
ADC) array 22, sensing unit distortion correction circuit 23, fingerprint image buffer 24, fingerprint image o controller 25, image
Signal processor 26, digital analog converter 27, radio frequency (RF) signal generating circuit 28 and RF driven electrode 29.Wherein, it is encapsulating
In structure, there is a layer insulating to directly overlay on two-dimentional sensing unit array 20 and optional multiple reference sensing units 202.
Wherein, the integer that N is 1 to 150, the integer that M is 2 to 300, L are the integer less than N*M.
In the present embodiment, two-dimentional sensing unit array 20 is spliced to form by multiple sensing units 201, sensing unit array
Controller 21 be used for provides be turned on and off sensing unit 201 needed for source bias switching signal and offer sensing unit
Charge and discharge clock signal needed for 201;RF driven electrode 29 arrives the emission of radio frequency signals that RF signal generating circuit 28 generates
Touch the finger of fingerprint sensor;Analog-to-digital conversion array 22 is made of side by side multiple analog-digital converters 221, by sensing unit
The sense capacitance that array 20 detects is converted into fingerprint image gray value;Sensing unit distortion correction circuit 23, it is each for correcting
Deviation between sensing unit;Fingerprint image buffer 24 is for storing the collected fingerprint gray scale of the currently active row sensing unit
Deviation between value and each sensing unit;A series of timing and to acquisition needed for fingerprint image processor 26 generates acquisition fingerprint
To finger print information do optimization processing;The control address that fingerprint image o controller 25 is inputted according to fingerprint image processor 26
Collected finger print information is output to fingerprint image processor 26;Also, fingerprint image processor 26 receives the fingerprint image
As the fingerprint image data that o controller 25 is sent, according to the fingerprint image data judge its true or false and it is normal whether simultaneously
Make corresponding processing.
Referring to Fig. 3, Fig. 3 is that radio frequency of the present invention declines the cross-sectional structure schematic diagram of capacitive fingerprint sensor chip.Such as
Shown in figure, a kind of radio frequency provided by the invention decline capacitive fingerprint acquisition chip cross section 3 include multiple sensing units 33, it is more
Insulating layer 35, nonconductive adhesive 31, insulating substrate 30 and RF driven electrode 32a, 32b on a sensing unit.Its
In, which is closely glued by nonconductive adhesive 31 and insulating layer 35 and together, the insulating substrate 30 is usual
Contact surface as finger;In the present embodiment, for the thickness of insulating substrate cross section 30 up to 1mm, nonconductive adhesive is transversal
The thickness in face 31 is thinned to 20um or less as far as possible.It in addition to this, in the present embodiment, can also include RF driven electrode
32a, 32b and buffering spacer 34, RF driven electrode 32a, 32b are embeddable into insulating substrate 30.
Sensing unit circuit knot it should be noted that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Structure can use the following two kinds embodiment.In example 1, it is illustrated in fig. 4 shown below, sensing unit 201 uses a reference
Capacitor and an amplifier;And in example 2, it is illustrated in fig. 5 shown below, sensing unit 201 is by 2 compound sub- sensing units
Composition, two sub- sensing units of Fig. 5 share a reference capacitance and an amplifier, and sensing unit shown in fig. 5 compares Fig. 4
Shown in the benefit of sensing unit be that amplifier and reference capacitance can be done greatly, and matching is more preferable, and the influence of parasitic capacitance is more
It is small.
[embodiment one]
Referring to Fig. 4, Fig. 4 is the sensing unit circuit that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Structural schematic diagram.As shown, each sensing unit 201 may include: the top-level metallic institute formed by integrated circuit technology
The single sense electrode 402 and sense capacitance dielectric layer of formation, the sensed media layer is by the insulating layer structure on top-level metallic 401
At single sense electrode 401 and finger and sense capacitance dielectric layer form single sense capacitor 40.
In addition to this, each sensing unit 201 further include reference capacitance 423, activated amplifier 44, corrective capacity 421,
Enhance capacitor 420, reference capacitance 423 and switching circuit 410,411,412,413.Wherein, by any metal of integrated circuit technology
The single correcting electrode that layer is formed, the single correcting electrode and single sense electrode form single corrective capacity 421;By integrated electricity
Metal layer except the technique top-level metallic of road is formed by single bucking electrode, the single bucking electrode and single sense electrode shape
At single mask capacitor 422;Single enhancing electrode is formed by any metal layer of integrated circuit technology, this individually enhances electrode and list
A sensing electrode forms single enhancing capacitor 420;4 switching circuits 410,411,412,413 form one group of switch control reference
Capacitor 423, sense capacitance 40, enhancing capacitor 420 and corrective capacity 421 carry out charge and discharge and equalizing charge.
In the present embodiment, sensing unit distortion correction circuit 23 also comprising forward-backward counter array, multiplier array,
Sensing unit deviation statistics circuit and sensing unit deviation correction factor counting circuit, wherein the forward-backward counter array
Calculate the sensing unit 201 and the deviation with reference to sensing unit 202;The sensing unit deviation statistics circuit statistics is described partially
The average value of poor absolute value;The sensing unit deviation correction factor counting circuit by the input of the digital analog converter 27 with it is upper
The numerical value of position machine input and the average value of the absolute value of the bias carry out mapping calculation and obtain correction factor;The multiplier array
The deviation is multiplied with the correction factor, exports result as the sensing unit correction for drift data.It is described to reflect
The method for penetrating calculating are as follows: the correction factor is directly obtained by host computer, and the correction factor is directly equal to host computer and calculates
The correction factor arrived;The method that host computer calculates correction factor is as follows:
K1=B*N1*E1/H1;
Wherein, K1 is the correction factor that host computer is calculated;
B is a fixed coefficient;
N1 is the numerical value that the digital analog converter for the chip that host computer is read by instruction inputs;
E1 is the average value that host computer reads the sensing unit and the absolute value of the bias with reference to sensing unit by instruction;
H1 is the assembly average by testing the actual sensed unit deviation that a large amount of chips obtain;
Or the correction factor is obtained by the chip interior, the calculation method of correction factor is as follows:
K2=B*N2*E2/H2;
Wherein, K2 is the correction factor that the chip is calculated;
B is a fixed coefficient;
N2 is the numerical value that the digital analog converter of the chip inputs;
The deviation of sensing unit distortion correction circuit is calculated described in E2 sensing unit and reference sensing unit is absolute
The average value of value;
H1 is that the statistics by testing the actual sensed unit deviation that a large amount of chips obtain inputted by host computer is put down
Mean value;
It is base using the radio frequency of the said chip circuit capacitive fingerprint acquisition method that declines according to the circuit of above-mentioned acquisition chip
Pass through charge pump principle in frequency signal generating circuit 28, RF driven electrode 29 and sensing unit with charge pump circuit structure
Realize that the conversion of finger print information to electric signal can specifically comprise the following steps:
Step S1: when finger is placed on two-dimentional sensing unit array 20, the sensing unit array control unit 21 is selected
Select effective row sensing unit of a line sensing unit in the two-dimentional sensing unit array 20 as current acquisition fingerprint;
Step S2: the currently active row sensing unit of ordered pair carries out when the output of sensing unit array control unit 21 initialization
Initialization;
Step S3: when the sensing unit array control unit 21 exports fingerprint collecting the currently active row sensing unit of ordered pair into
Row fingerprint collecting;
Step S4: it is single that the sensing unit array control unit 21 exports the currently active row sensing of finger print information timing ordered pair
The collected finger print information of member is corrected;Finger print information after the correction of the currently active row sensing unit is taken away;
Step S5: the sensing unit array control unit 21 selects next line sensing unit having as current acquisition fingerprint
Row sensing unit is imitated, sequence completes initialization, fingerprint collecting, finger print information correction and reads finger print information Four processes, until
The sensing unit array control unit selects last line sensing unit as effective row sensing unit of current acquisition fingerprint, suitable
Sequence completes initialization, fingerprint collecting, finger print information correction and reads finger print information Four processes.
In the present embodiment, above-mentioned steps S2 initializes acquisition timing and may include:
Step S21: first pulse signal of output of sensing unit array control unit 21 to the currently active row sensing unit,
The pulse signal charges to the reference capacitance 423 of the currently active row sensing unit during pulse width, makes the reference capacitance
423 both ends accumulating values are the quantity of electric charge of C1*V1, and the C1 is the capacitance of reference capacitance, and the V1 is to charge to reference capacitance
Voltage value;
Step S22: second pulse signal of output of sensing unit array control unit 21 to the currently active row sensing unit,
The radiofrequency signal that the pulse signal and the radiofrequency signal generation circuit 28 generate makes the correction of the currently active row sensing unit
Capacitor 421 discharges, and the quantity of electric charge at its both ends is made to become zero;The pulse signal makes the enhancing capacitor of the currently active row sensing unit
420 chargings make the quantity of electric charge of its both ends accumulating value C2*V2, and the C2 is the capacitance for enhancing capacitor, and the V2 is to enhancing
The voltage value of capacitor charging;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S23: the output third pulse signal of sensing unit array control unit 21 to the currently active row sensing unit,
The radiofrequency signal that the radiofrequency signal generation circuit 28 generates first makes the Partial charge for enhancing capacitor 420 be transferred to the correction electricity
Hold upper 421 and the output of the unit gain buffer of the currently active row sensing unit is made to be connected to the currently active row sensing unit
Bucking electrode, the third pulse signal make the reference capacitance 423, enhancing capacitor 420 and corrective capacity 421 carry out charge again
Equilibrium, so that the quantity of electric charge at 423 both ends of the reference capacitance is reduced;
Step S24: the sensing unit array control unit 21 exports the second pulse signal and third of fixed cycles number
For pulse signal to the currently active row sensing unit, the radiofrequency signal generation circuit 28 generates the radio frequency of identical fixed cycles number
Signal, the second pulse signal and third pulse signal and the radiofrequency signal generation circuit 28 of the fixed cycles number generate
Identical fixed cycles number radiofrequency signal make jointly effective row sensing unit 423 both ends of reference capacitance voltage difference
Gradually reduce, the voltage difference at 423 both ends of reference capacitance is locked after circulation terminates, while the analog-to-digital conversion array 22 will
The voltage differential signal is converted into the initialization value of the currently active row sensing unit;Wherein, the fixed cycles in initialization procedure
Number may be configured as 2 N " power, the integer that N " is 2 to 8;
Step S25: the initialization value of the currently active row sensing unit is passed to fingerprint image buffer 24, completes to work as
The initialization procedure of preceding effective row sensing unit.
In the present embodiment, above-mentioned steps S3, that is, fingerprint collecting timing may include:
Step S31: after initialization timing, the sensing unit array control unit 21 exports the first pulse signal again
To the currently active row sensing unit, the pulse signal is during pulse width to the reference capacitance of the currently active row sensing unit
423 chargings, make 423 both ends of reference capacitance accumulate certain quantity of electric charge, certain quantity of electric charge can be with initialization
The quantity of electric charge is identical;
Step S32: the sensing unit array control unit 21 exports the second pulse signal again and senses to the currently active row
The radiofrequency signal that unit, the pulse signal and the radiofrequency signal generation circuit 28 generate makes the currently active row sensing unit
Sense capacitance 40 and corrective capacity 421 discharge, and so that the quantity of electric charge at its both ends is become zero, the pulse signal senses the currently active row
The enhancing capacitor 420 of unit charges, and makes the quantity of electric charge of its both ends accumulating value C2*V2, and wherein C2 is the capacitance for enhancing capacitor,
V2 is to the voltage value of enhancing capacitor charging;The pulse signal makes the current potential at mask capacitor both ends all be V2;
Step S33: the sensing unit array control unit 21 exports third pulse signal again and senses to the currently active row
Unit, the radiofrequency signal that the radiofrequency signal generation circuit 28 generates are launched outward by the RF driven electrode 29, finger
Radiofrequency signal with the radiofrequency signal with phase will be generated in finger skin corium by contacting after the RF driven electrode 29, described
The radiofrequency signal that the radiofrequency signal and the skin corium that radiofrequency signal generation circuit 28 generates generate first makes to enhance capacitor 420 jointly
Partial charge be transferred to 421 on the sense capacitance 40 and corrective capacity, the third pulse signal make again it is described with reference to electricity
Hold 423, sense capacitance 40, enhancing capacitor 420 and corrective capacity 421 and carry out equalizing charge, so that 40 both ends of the reference capacitance
The quantity of electric charge reduce;
Step S34: the sensing unit array control unit 21 export another fixed cycles number the second pulse signal and
To the currently active row sensing unit, the radiofrequency signal that the radiofrequency signal generation circuit 28 generates passes through described third pulse signal
RF driven electrode 29 launches outward the radiofrequency signal of identical fixed cycles number, the second pulse letter of the fixed cycles number
Number and the radiofrequency signal of identical fixed cycles number that generates of third pulse signal and the radiofrequency signal generation circuit and described
The radiofrequency signal for the identical fixed cycles number that finger skin corium generates makes the reference capacitance of effective row sensing unit jointly
The voltage difference at 423 both ends gradually reduces, and the voltage difference at 423 both ends of reference capacitance is locked after circulation terminates, while described
The voltage differential signal is converted into the currently active collected finger print information of row sensing unit by the column of analog-to-digital conversion battle array 22;Wherein institute
State the M " power that fixed cycles number is 2, the integer that M " is 4 to 16;
Step S35: being passed to fingerprint image buffer 24 for the currently active collected finger print information of row sensing unit,
Complete the fingerprint collecting process of the currently active row sensing unit.
In the present embodiment, above-mentioned steps S4 finger print information correction timing may include:
Step S41: the currently active row sensing unit is after completing initialization and fingerprint collecting process, the sensing unit battle array
Column controller 21 output first correction timing, by the initial value of the currently active row sensing unit, with reference to sensing unit initial value,
The numerical value of the input of digital analog converter and host computer input is input to the sensing unit distortion correction circuit and calculates sensing unit
Correction for drift data, and the sensing unit correction for drift data are stored in fingerprint image buffer 24;
Step S42: the second correction of sensing unit array control unit output timing adopts effective row sensing unit
The finger print information collected subtracts the information in fingerprint after the sensing unit correction for drift data are corrected;
Step S43: the information in fingerprint after the correction of the currently active row sensing unit is stored in the fingerprint image and is delayed
In storage 24, the information in fingerprint after the correction is taken away under the control of host computer.
[embodiment two]
Referring to Fig. 5, Fig. 5 is the multiple-sensing unit that radio frequency of the present invention declines in capacitive fingerprint sensor chip embodiment
Electrical block diagram.As shown,
Each multiple-sensing unit 201 includes optional multiple sub- sensing unit structures;By the top layer gold of integrated circuit technology
Category is formed by two sensing electrodes 502a and 502b;Sense capacitance dielectric layer (not shown), by integrated circuit technology top layer
Insulating layer, nonconductive adhesive and insulating substrate on metal are constituted, two sensing electrode 502a and 502b and finger corium
Layer 501 and sense capacitance dielectric layer form sense capacitance 50a and 50b;By two sensing electrode 502a and 502b and integrated circuit
Two enhancing capacitors 520a and 520b that other metal electrodes of technique are formed, two sensing unit deviation corrective capacity 521a and
521b and two mask capacitor 522a and 522b;It is multiplexed reference capacitance 523;It is multiplexed amplifier 54 of having chance with;Multiple switch circuit
510a, 510b, 511a, 511b, 512a, 512b, 513a and 513b, for controlling enhancing capacitor 520a, sense capacitance 50a, sense
It surveys unit corrective capacity 521a and multiplexing reference capacitance 523 carries out charge and discharge and equalizing charge, or control enhancing capacitor 520b, sense
It surveys capacitor 50b, sensing unit corrective capacity 521b and multiplexing reference capacitance 523 carries out charge and discharge and equalizing charge.
In the present embodiment, sensing unit distortion correction circuit 23 also comprising forward-backward counter array, multiplier array,
Sensing unit deviation statistics circuit and sensing unit deviation correction factor counting circuit, wherein the forward-backward counter array
Calculate the sensing unit 201 and the deviation with reference to sensing unit 202;The sensing unit deviation statistics circuit statistics is described partially
The average value of poor absolute value;The sensing unit deviation correction factor counting circuit by the input of the digital analog converter 27 with it is upper
The numerical value of position machine input and the average value of the absolute value of the bias carry out mapping calculation and obtain correction factor;The multiplier array
The deviation is multiplied with the correction factor, exports result as the sensing unit correction for drift data.It is described to reflect
The method for penetrating calculating are as follows: the correction factor is directly obtained by host computer, and the correction factor is directly equal to host computer and calculates
The correction factor arrived;The method that host computer calculates correction factor is as follows:
K1=B*N1*E1/H1;
Wherein, K1 is the correction factor that host computer is calculated;
B is a fixed coefficient;
N1 is the numerical value that the digital analog converter for the chip that host computer is read by instruction inputs;
E1 is the average value that host computer reads the sensing unit and the absolute value of the bias with reference to sensing unit by instruction;
H1 is the assembly average by testing the actual sensed unit deviation that a large amount of chips obtain;
Or the correction factor is obtained by the chip interior, the calculation method of correction factor is as follows:
K2=B*N2*E2/H2;
Wherein, K2 is the correction factor that the chip is calculated;
B is a fixed coefficient;
N2 is the numerical value that the digital analog converter of the chip inputs;
The deviation of sensing unit distortion correction circuit is calculated described in E2 sensing unit and reference sensing unit is absolute
The average value of value;
H1 is that the statistics by testing the actual sensed unit deviation that a large amount of chips obtain inputted by host computer is put down
Mean value;
According to the circuit of above-mentioned acquisition chip, using the radio frequency of said chip circuit to decline capacitive fingerprint acquisition method can be with
Specifically comprise the following steps:
Step S1 ': when finger 10 is placed on two-dimentional sensing unit array 20, multiple-sensing unit array control unit 21
Select the sub- sensing unit of a line sensing unit 201 in two-dimentional sensing unit array as effective row of current acquisition fingerprint
Sensing unit;
Step S2 ': ordered pair the currently active row sensing unit when the output initialization of multiple-sensing unit array control unit 21
It is initialized;
Step S3 ': the currently active row sensing of ordered pair is single when multiple-sensing unit array control unit 21 exports fingerprint collecting
Member carries out fingerprint collecting;
Step S4 ' multiple-sensing unit array control unit 21 is to the currently active collected finger print information of row sensing unit
It is corrected;
Finger print information after the currently active row sensing unit correction of step S5 ' reading;
Step S6 ' multiple-sensing unit array control unit 21 successively selects another sub- sensing unit of effective row sensing unit
As the currently active row sensing unit, repeat step S2 '~step S5 ' until complete the initialization of all sub- sensing units,
Fingerprint collecting, finger print information correction and finger print information read Four processes;
Step S7 ' sensing unit array control unit successively selects the next line sensing unit in two-dimentional sensing unit array
Effective row sensing unit of the sub- sensing unit as current acquisition fingerprint repeats step S2 '~step S6 ' until completing entire
Two-dimentional sensing unit array reads Four processes to the initialization of fingerprint, fingerprint collecting, finger print information correction and finger print information.
In the present embodiment, above-mentioned steps S2 ' is that sub- sensing unit initialization acquisition timing specifically includes:
Step S21 ': the multiple-sensing unit array control unit 21 exports the first pulse signal to the currently active row sense
Unit is surveyed, the pulse signal charges to the multiplexing reference capacitance 523 of the currently active row sensing unit during pulse width,
Making the quantity of electric charge of the multiplexing 523 both ends accumulating value C1*V1 of reference capacitance, the C1 is the capacitance for being multiplexed reference capacitance,
The V1 is the voltage value to charge to multiplexing reference capacitance;
Step S22 ': the multiple-sensing unit array control unit 21 exports the second pulse signal to the currently active row sense
Unit is surveyed, the radiofrequency signal that the pulse signal and the radiofrequency signal generation circuit 28 generate keeps the currently active row sensing single
The corrective capacity electric discharge 521a or 521b of member, makes the quantity of electric charge at its both ends go to zero;The pulse signal makes the currently active row
Enhancing the capacitor 520a or 520b of sensing unit charge, and make the quantity of electric charge of its both ends accumulating value C2*V2, and the C2 is enhancing electricity
The capacitance of appearance, the V2 are to the voltage value of enhancing capacitor charging;The pulse signal makes the current potential at mask capacitor both ends all
For V2;
Step S23 ': the multiple-sensing unit array control unit 21 exports third pulse signal to the currently active row sense
Survey unit, the radiofrequency signal that the radiofrequency signal generation circuit generates first make effective row sensing unit enhancing capacitor 520a or
The Partial charge of 520b is transferred on the corrective capacity 521a or 521b of effective row sensing unit, the third pulse letter
Number make enhancing the capacitor 520a or 520b and corrective capacity 521a of the multiplexing reference capacitance 523, effective row sensing unit again
Or 521b carries out equalizing charge, so that the quantity of electric charge at multiplexing 523 both ends of reference capacitance is reduced;
Step S24 ': the multiple-sensing unit array control unit 21 export fixed cycles number the second pulse signal and
For third pulse signal to the currently active row sensing unit, the radiofrequency signal generation circuit 28 generates identical fixed cycles number
Radiofrequency signal, the second pulse signal and third pulse signal of the fixed cycles number and the radiofrequency signal generation circuit
The radiofrequency signal of the identical fixed cycles number generated makes 523 liang of multiplexing reference capacitance of effective row sensing unit jointly
The voltage difference at end gradually reduces, and the voltage difference at multiplexing 523 both ends of reference capacitance is locked after circulation terminates, while the mould
The voltage differential signal is converted into the initialization value of the currently active row sensing unit by number conversion array 22;Wherein, it initializes
Fixed cycles number in the process may be configured as 2 Nth power, the integer that N is 2 to 8;
Step S25 ': the initialization value of the currently active row sensing unit is passed to the fingerprint image buffer
24, complete the initialization procedure of the currently active row sensing unit.
In the present embodiment, above-mentioned steps S3 ' is that sub- sensing unit fingerprint collecting timing specifically includes:
Step S31 ': after initialization timing, the multiple-sensing unit array control unit 21 exports the first arteries and veins again
Signal is rushed to the currently active row sensing unit, the pulse signal is during pulse width to the currently active row sensing unit
It is multiplexed reference capacitance 523 to charge, multiplexing 523 both ends of reference capacitance is made to accumulate certain quantity of electric charge, these quantities of electric charge can be with
It is identical with the quantity of electric charge of initialization;
Step S32 ': the multiple-sensing unit array control unit 21 exports the second pulse signal to the currently active row again
The radiofrequency signal that sub- sensing unit, the pulse signal and the radiofrequency signal generation circuit 28 generate makes the currently active row sense
Sense capacitance 50a or 50b and corrective capacity 521a or the 521b electric discharge for surveying unit, make the quantity of electric charge at its both ends go to zero, described
Pulse signal makes enhancing the capacitor 520a or 520b of the currently active row sensing unit charge, and makes its both ends accumulating value C2*V2
The quantity of electric charge, wherein C2 be enhance capacitor capacitance, V2 be capacitor charging to enhancing voltage value;The pulse signal makes to shield
The current potential for covering capacitor both ends is all V2;
Step S33 ': the multiple-sensing unit array control unit 21 exports third pulse signal to the currently active row again
Sub- sensing unit, the radiofrequency signal that the radiofrequency signal generation circuit 28 generates is by the RF driven electrode 29 to outgoing
It penetrates, finger will be believed with the radiofrequency signal with the radio frequency of phase after contacting the RF driven electrode 29 in the generation of finger skin corium
Number, the radiofrequency signal that the radiofrequency signal and the skin corium that the radiofrequency signal generation circuit 28 generates generate first makes effectively jointly
The Partial charge of the enhancing capacitor of the sub- sensing unit of row is transferred to the sense capacitance 50a or 50b of effective row sensing unit
On corrective capacity 521a or 521b, the third pulse signal make again the multiplexing reference capacitance 523, sense capacitance 50a or
50b, enhancing capacitor 520a or 520b and corrective capacity 521a or 521b carry out equalizing charge, so that the multiplexing reference capacitance
The quantity of electric charge at 523 both ends is reduced;
Step S34 ': the multiple-sensing unit array control unit 21 exports the second pulse letter of another fixed cycles number
Number and third pulse signal arrive the currently active row sensing unit, the radiofrequency signal that the radiofrequency signal generation circuit 28 generates is led to
Cross the radiofrequency signal that the RF driven electrode 29 launches outward identical fixed cycles number, the second of the fixed cycles number
The radiofrequency signal for the identical fixed cycles number that pulse signal and third pulse signal are generated with the radiofrequency signal generation circuit
And the radiofrequency signal of the identical fixed cycles number of the finger skin corium generation makes effective row sensing unit jointly
The voltage difference at multiplexing 523 both ends of reference capacitance gradually reduces, after circulation terminates the voltage difference at multiplexing 523 both ends of reference capacitance
It is locked, while the voltage differential signal is converted into the currently active row sensing unit and collected by the analog-to-digital conversion array 22
Finger print information;Wherein M " the power that the fixed cycles number is 2, the integer that M " is 4 to 16;
Step S35 ': the currently active collected finger print information of row sensing unit is passed to fingerprint image buffer
24, complete the fingerprint collecting process of the currently active row sensing unit.
In the present embodiment, above-mentioned steps S4 ' is that finger print information correction timing specifically includes:
Step S41 ': the currently active row sensing unit is after completing initialization and fingerprint collecting process, the compound sense
The output of cell array controller 21 first correction timing is surveyed, by the initial value of the currently active row sensing unit 201, with reference to sensing
It is inclined that the numerical value of the initial value of unit 202, the input of the digital analog converter 27 and host computer input is input to the sensing unit
Poor correcting circuit 23 calculates sub- sensing unit correction for drift data, and the sub- sensing unit correction for drift data are stored
In fingerprint image buffer;
Step S42 ': second correction of the output of multiple-sensing unit array control unit 21 timing, by effective row
The collected finger print information of sensing unit subtracts the fingerprint image after the sub- sensing unit correction for drift data are corrected
Information;
Step S43 ': the information in fingerprint after the correction of the currently active row sensing unit is stored in the fingerprint image
In buffer 24, the information in fingerprint under the control of host computer after the correction is taken away.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.