CN103839777A - Large area continuous lossless laser stripping method for gallium nitride film - Google Patents
Large area continuous lossless laser stripping method for gallium nitride film Download PDFInfo
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- CN103839777A CN103839777A CN201410086759.6A CN201410086759A CN103839777A CN 103839777 A CN103839777 A CN 103839777A CN 201410086759 A CN201410086759 A CN 201410086759A CN 103839777 A CN103839777 A CN 103839777A
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- gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
Abstract
The invention discloses a large area continuous lossless laser stripping method for a gallium nitride film. The method comprises the following steps of taking an epitaxial wafer, wherein the gallium nitride film grows on a sapphire substrate; depositing a transition layer on the surface of the gallium nitride film; preparing a transferring substrate on the surface of the transition surface; adopting a long-strip shaped laser spot in a stepping and scanning mode to scan and radiate the back face of the sapphire substrate to achieve integral separation of the sapphire substrate and the gallium nitride film. According to the large area continuous lossless laser stripping method for the gallium nitride film, the long-strip-shaped flat top laser spot is adopted for scanning, not only can that a large area gallium nitride film is stripped without a crack be ensured, but also the acceptable processing rate can be obtained. The large area continuous lossless laser stripping method for the gallium nitride film has important significance to progress of the preparation technology of an existing light emitting diode of the gallium nitride-based structure and gallium nitride monocrystalline.
Description
Technical field
The invention belongs to process for fabrication of semiconductor device technical field, refer to especially a kind of large area harmless laser-stripping method continuously of gallium nitride film.
Background technology
The growing technology of most widely used a kind of gallium nitride material at Grown on Sapphire Substrates gallium nitride film at present.Due to Sapphire Substrate insulation and heat conductivility poor, restricted the performance of the gallium nitrate based photoelectric device of being made by the gallium nitride film at Grown on Sapphire Substrates, the technology that therefore Sapphire Substrate is replaced with to new substrate has obtained research widely.Wherein laser lift-off technique can be separated gallium nitride film and Sapphire Substrate, provides good solution for solving this technical problem of replacement Sapphire Substrate.But laser lift-off can produce nitrogen while decomposing the gallium nitride film at interface, forms larger shock wave, cause the gallium nitride film surrounding cracking of accepting laser facula, therefore can not obtain large area harmless gallium nitride film continuously.
In order to address this problem, need to adopt the laser facula scanning that area is especially little, the shock wave producing to reduce single fraction irradiation, but this has increased the burden of equipment moving platform greatly, and process velocity is declined to a great extent.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of large area harmless laser-stripping method continuously of gallium nitride film, and the shock wave effect producing when eliminating and to reduce gallium nitride laser lift-off, improves process velocity.
(2) technical scheme
For achieving the above object, the large area that the invention provides a kind of gallium nitride film is harmless laser-stripping method continuously, and the method comprises: the epitaxial wafer of gallium nitride film that has been taken at Grown on Sapphire Substrates; At the surface deposition transition zone of gallium nitride film; Make translate substrate on transition zone surface; And adopt the strip laser facula scanning of step-scan mode to irradiate the back side of the Sapphire Substrate of whole polishing, realize the overall separation of Sapphire Substrate and gallium nitride film.
In such scheme, the described surface deposition transition zone at gallium nitride film, is to adopt electron beam evaporation technique at gallium nitride film surface deposition multiple layer metal layer, and this multiple layer metal layer is as transition zone.Described multiple layer metal layer is the combination of Ni, Ag, Pt, Au and AuSn alloy.
In such scheme, the described translate substrate of making on transition zone surface, comprising: get the tungsten-copper alloy of surface gold-plating or molybdenum-copper disk as translate substrate, the copper that contains 5%-25% weight in this tungsten-copper alloy or molybdenum-copper disk; And this translate substrate is connected on transition zone by the mode of thermocompression bonding.Described this translate substrate is connected on transition zone by the mode of thermocompression bonding, bonding temperature is between 270-330 degree Celsius, and pressure is got 1-500kg, constant temperature and pressure time 10-60 second.
In such scheme, the back side of the Sapphire Substrate of whole polishing is irradiated in the strip laser facula scanning of described employing step-scan mode, comprise: the laser facula that laser lift-off equipment is produced is adjusted into strip, adopt the strip laser facula scanning of step-scan mode to irradiate the sapphire back side of whole polishing, laser facula all around is just in time docked, thereby realize the overall separation of sapphire and gallium nitride film.The length range of described strip laser facula is 100 microns to 10000 microns, and width range is 0.1 micron to 50 microns.
(3) beneficial effect
The present invention adopts strip flat-top laser facula to scan, the in the situation that of same laser facula area, compare traditional square laser facula, to peel off both sides, interface produce impact moment much smaller, large-area gallium nitride film sample flawless can be guaranteed to peel off, acceptable processing speed can be obtained again.If adopt traditional square laser facula to carry out laser lift-off, in order to guarantee that gallium nitride film does not crack, must facula area be arranged very littlely, process time and processing cost are greatly extended, make this square laser-stripping method can not be used for peeling off the actual production of large area continuous gallium nitride film, and utilize the present invention can comparatively fast and effectively prepare large-area flawless continuous gallium nitride film.The present invention especially progress of the manufacturing process to current gallium nitride-based light emitting diode with vertical structure, gallium nitride single crystal has a very important role.
Accompanying drawing explanation
Fig. 1 be at Grown on Sapphire Substrates the cross section structure schematic diagram of epitaxial wafer of gallium nitride film.
Fig. 2 is the cross section structure schematic diagram of having made the epitaxial wafer of translate substrate.
Fig. 3 is the path schematic top plan view of strip laser facula scanning disk, and the cross section structure of disk is the structure shown in Fig. 2, and upward, in figure, dotted line is scanning pattern to sapphire surface.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In the accompanying drawings, for convenience with for the purpose of getting across, the thickness of each layer or size can amplify, dwindle or schematically show, and the size of each component part needn't or can reflect its actual size.
The large area of this gallium nitride film provided by the invention is harmless laser-stripping method continuously, comprises the following steps:
Step 1: the epitaxial wafer of gallium nitride film that has been taken at Grown on Sapphire Substrates;
Step 2: at the surface deposition transition zone of gallium nitride film;
In this step, at the surface deposition transition zone of gallium nitride film, be to adopt electron beam evaporation technique at gallium nitride film surface deposition multiple layer metal layer, this multiple layer metal layer is as transition zone, and this multiple layer metal layer is the combination of Ni, Ag, Pt, Au and AuSn alloy.
Step 3: make translate substrate on transition zone surface;
In this step, make translate substrate on transition zone surface and comprise: get the tungsten-copper alloy of surface gold-plating or molybdenum-copper disk as translate substrate, the copper that contains 5%-25% weight in this tungsten-copper alloy or molybdenum-copper disk; And this translate substrate is connected on transition zone by the mode of thermocompression bonding.This translate substrate is connected on transition zone by the mode of thermocompression bonding, and bonding temperature is between 270-330 degree Celsius, and pressure is got 1-500kg, constant temperature and pressure time 10-60 second, preferably, bonding temperature is got 300 degrees Celsius, pressure is got 500kg, 30 seconds constant temperature and pressure time.
Step 4: adopt the strip laser facula scanning of step-scan mode to irradiate the back side of the Sapphire Substrate of whole polishing, realize the overall separation of Sapphire Substrate and gallium nitride film;
In this step, adopt the back side of the Sapphire Substrate of the whole polishing of strip laser facula scanning irradiation of step-scan mode to comprise: the laser facula that laser lift-off equipment is produced is adjusted into strip, adopt the strip laser facula scanning of step-scan mode to irradiate the sapphire back side of whole polishing, laser facula all around is just in time docked, thereby realize the overall separation of sapphire and gallium nitride film.Wherein, the length range of strip laser facula is 100 microns to 10000 microns, and width range is 0.1 micron to 50 microns.
Hereinafter, describe with reference to the accompanying drawings the large area harmless laser-stripping method continuously of the gallium nitride film of embodiment of the present invention in detail, the method comprises the following steps:
First get the grown epitaxial wafer 100 of gallium nitride film 102 of a slice in Sapphire Substrate 101, as shown in Figure 1.
At gallium nitride film 102 surface deposition transition zones 200.
On transition zone 200, make translate substrate 300, transition zone 200 is for connecting gallium nitride film 102 and translate substrate 300, as shown in Figure 2.
The laser facula that laser lift-off equipment is produced is adjusted into strip, and the length range of strip laser facula is between 100 microns to 10000 microns, and width range is between 0.1 micron to 50 microns.Adopt the strip laser facula scanning of step-scan mode to irradiate sapphire 101 back sides of whole polishing, as shown in Figure 3, laser facula all around just in time docks, thereby realizes the overall separation of sapphire 101 and gallium nitride film 102.
Embodiment
First get grown in Sapphire Substrate 101 epitaxial wafer 100 of gallium nitride film 102 of a slice, epitaxial wafer 100 is the disk of 450 microns of 2 inches diameters, thickness, and epitaxial wafer 100 cross section structures as shown in Figure 1.
Adopt electron beam evaporation technique at gallium nitride film 102 surface deposition multiple layer metal layers---Ni, Ag, Pt and AuSn alloy, each layer thickness is respectively 10,3000,500,40000 dusts, and this multiple layer metal layer is as transition zone 200.
Get (85% tungsten, 15% bronze medal) tungsten-copper alloy disk of 2 inches diameter, 200 microns of thickness and surface gold-plating, approximately 0.5 micron of plated thickness, tungsten-copper alloy disk surfaces roughness is less than 100 nanometers.This tungsten-copper alloy disk is as translate substrate 300, this translate substrate 300 is connected to above transition zone 200 by the mode of thermocompression bonding, and bonding temperature is got 300 degrees Celsius, and pressure is got 500kg, 30 seconds constant temperature and pressure time, the disk cross section after thermocompression bonding as shown in Figure 2.
The laser facula that laser lift-off equipment is produced is adjusted into strip, 1000 microns of the length of strip laser facula, 10 microns of width.Adopt the strip laser facula scanning of step-scan mode to irradiate the back side of the sapphire 101 of whole polishing, 1000 microns of longitudinal step-lengths that stepping is moved, laterally 10 microns of step-lengths, as shown in Figure 3, just in time dock laser facula all around.Laser scanning scope is slightly larger than disk area, thereby realizes the overall separation of sapphire 101 and gallium nitride film 102.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. the large area of a gallium nitride film harmless laser-stripping method continuously, is characterized in that, the method comprises:
The epitaxial wafer of gallium nitride film that has been taken at Grown on Sapphire Substrates;
At the surface deposition transition zone of gallium nitride film;
Make translate substrate on transition zone surface; And
Adopt the strip laser facula scanning of step-scan mode to irradiate the back side of the Sapphire Substrate of whole polishing, realize the overall separation of Sapphire Substrate and gallium nitride film.
2. the large area of gallium nitride film according to claim 1 harmless laser-stripping method continuously, it is characterized in that, the described surface deposition transition zone at gallium nitride film, is to adopt electron beam evaporation technique at gallium nitride film surface deposition multiple layer metal layer, and this multiple layer metal layer is as transition zone.
3. the large area of gallium nitride film according to claim 2 harmless laser-stripping method continuously, is characterized in that, described multiple layer metal layer is the combination of Ni, Ag, Pt, Au and AuSn alloy.
4. the large area of gallium nitride film according to claim 1 harmless laser-stripping method continuously, is characterized in that, described in transition zone surface making translate substrate, comprising:
Get the tungsten-copper alloy of surface gold-plating or molybdenum-copper disk as translate substrate, the copper that contains 5%-25% weight in this tungsten-copper alloy or molybdenum-copper disk; And
This translate substrate is connected on transition zone by the mode of thermocompression bonding.
5. the large area of gallium nitride film according to claim 4 harmless laser-stripping method continuously, it is characterized in that, described this translate substrate is connected on transition zone by the mode of thermocompression bonding, bonding temperature is between 270-330 degree Celsius, pressure is got 1-500kg, constant temperature and pressure time 10-60 second.
6. the large area of gallium nitride film according to claim 1 harmless laser-stripping method continuously, is characterized in that, the back side of the Sapphire Substrate of whole polishing is irradiated in the strip laser facula scanning of described employing step-scan mode, comprising:
The laser facula that laser lift-off equipment is produced is adjusted into strip, adopt the strip laser facula scanning of step-scan mode to irradiate the sapphire back side of whole polishing, laser facula all around is just in time docked, thereby realize the overall separation of sapphire and gallium nitride film.
7. the large area of gallium nitride film according to claim 6 harmless laser-stripping method continuously, is characterized in that, the length range of described strip laser facula is 100 microns to 10000 microns, and width range is 0.1 micron to 50 microns.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105598589A (en) * | 2016-01-07 | 2016-05-25 | 航天科工防御技术研究试验中心 | Laser unsealing method |
| CN107622977A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of gradual micron order Sapphire Substrate laser lift-off |
| CN107845601A (en) * | 2017-10-23 | 2018-03-27 | 苏州德龙激光股份有限公司 | The method for tearing bonding open using flat-top nanosecond Ultra-Violet Laser |
| CN109746568A (en) * | 2019-01-30 | 2019-05-14 | 大族激光科技产业集团股份有限公司 | A kind of laser-processing system and laser processing |
| CN111112842A (en) * | 2019-12-24 | 2020-05-08 | 中国电子科技集团公司第三十八研究所 | Gold-removing tin-coating method and application |
| CN113148997A (en) * | 2021-06-01 | 2021-07-23 | 大连理工大学 | Large-area thickness-controllable two-dimensional material nanosheet and general preparation method thereof |
| WO2023010676A1 (en) * | 2021-08-02 | 2023-02-09 | 北京工业大学 | Laser rapid preparation method for flexible gallium nitride photodetector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6420242B1 (en) * | 1998-01-23 | 2002-07-16 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US20030150843A1 (en) * | 2001-12-03 | 2003-08-14 | Sony Corporation | Crystal layer separation method, laser irradiation method and method of fabricating devices using the same |
| CN1779900A (en) * | 2004-11-23 | 2006-05-31 | 北京大学 | Large-area and low-power laser stripping method for GaN-base epitaxial layer |
| CN102683248A (en) * | 2011-03-14 | 2012-09-19 | 优志旺电机株式会社 | Laser lift-off device |
-
2014
- 2014-03-11 CN CN201410086759.6A patent/CN103839777A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6420242B1 (en) * | 1998-01-23 | 2002-07-16 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US20030150843A1 (en) * | 2001-12-03 | 2003-08-14 | Sony Corporation | Crystal layer separation method, laser irradiation method and method of fabricating devices using the same |
| CN1779900A (en) * | 2004-11-23 | 2006-05-31 | 北京大学 | Large-area and low-power laser stripping method for GaN-base epitaxial layer |
| CN102683248A (en) * | 2011-03-14 | 2012-09-19 | 优志旺电机株式会社 | Laser lift-off device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105598589A (en) * | 2016-01-07 | 2016-05-25 | 航天科工防御技术研究试验中心 | Laser unsealing method |
| CN105598589B (en) * | 2016-01-07 | 2018-05-15 | 航天科工防御技术研究试验中心 | laser opening method |
| CN107622977A (en) * | 2017-08-31 | 2018-01-23 | 西安交通大学 | A kind of gradual micron order Sapphire Substrate laser lift-off |
| CN107845601A (en) * | 2017-10-23 | 2018-03-27 | 苏州德龙激光股份有限公司 | The method for tearing bonding open using flat-top nanosecond Ultra-Violet Laser |
| CN109746568A (en) * | 2019-01-30 | 2019-05-14 | 大族激光科技产业集团股份有限公司 | A kind of laser-processing system and laser processing |
| CN111112842A (en) * | 2019-12-24 | 2020-05-08 | 中国电子科技集团公司第三十八研究所 | Gold-removing tin-coating method and application |
| CN113148997A (en) * | 2021-06-01 | 2021-07-23 | 大连理工大学 | Large-area thickness-controllable two-dimensional material nanosheet and general preparation method thereof |
| WO2023010676A1 (en) * | 2021-08-02 | 2023-02-09 | 北京工业大学 | Laser rapid preparation method for flexible gallium nitride photodetector |
| US11894483B2 (en) | 2021-08-02 | 2024-02-06 | Beijing University Of Technology | Laser rapid fabrication method for flexible gallium nitride photodetector |
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Application publication date: 20140604 |