CN103779437A - Single-photon-level resolution ratio sensor unit structure based on standard CMOS technology - Google Patents
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Abstract
Disclosed is a single-photon-level resolution ratio sensor unit structure based on the standard CMOS technology. The single-photon-level resolution ratio sensor unit structure uses an SPAD. According to the single-photon-level resolution ratio sensor unit structure, basically, a deep N-well (3) is arranged above a P-type silicon substrate (4), a P-well area (2) is formed above the deep N-well (3) and wrapped by the deep N-well (3), an anode contact (9) is connected to the P-well area (2) through a heavy-doping P-well area (1), a cathode contact (10) is connected to an N-well area (6) and the deep N-well (3) through a heavy-doping N-well area (5), a shallow trench isolation area (7) is located between the P-well area (2) and the N-well area (6) to isolate a P-well from an N-well, a P-type doped protection ring (8) surrounds the shallow trench isolation area (7) so as to restrain dark noise caused by defects in shallow trench isolation, and a PN junction (11) is arranged between the bottom of the P-well area (2) and the deep N-well (3); the PN junction generates a high-voltage area when proper bias voltage is applied between the cathode and the anode, and an SPAD multiplication area is formed so as to explore photons; the breakdown voltage of the edge of the PN junction is higher than that of the SPAD plane multiplication area by controlling the concentration gradient of the deep N-well (3).
Description
Technical field
The present invention is a kind of cellular construction of single-photon-level resolution transducer, and specifically in standard CMOS process, realizes its manufacture method.
Background technology
In fields such as faint light imaging, high speed imaging and quantum communications, need efficient, low noise single-photon detector.Present normally used photomultiplier (PMT) needs high steering voltage, and cellular construction volume is large, can not large-scale integrated.Silicon avalanche photodiode (APD) is the range of linearity that is operated in PN junction, and operating voltage, lower than avalanche voltage, so it gains generally not higher than 1000, can not realize single photon detection.Its gain of electron multiplication CCD (EM-CCD) can be applied and faint light detection, but its operating frequency is lower, and temporal resolution does not reach the application of photon counting.
Single-photon avalanche diode (SPAD), i.e. geiger mode avalanche photodiodes (GM-APD), its basic structure is the PN junction of a plane, operating voltage is positioned on PN junction avalanche breakdown voltage.In the time that the operating voltage of plane PN junction is approached avalanche voltage gradually, the avalanche multiplication factor will be tending towards infinitely great in theory, and in fact, and in the time that operating voltage is less than avalanche voltage, multiplication factor will be saturated during to 1000 left and right.Only, under Geiger mode angular position digitizer, when operating voltage is higher than avalanche breakdown voltage, multiplication factor could be even as big as catching single photon.
Single-photon avalanche diode can be realized with various structures, and the final device property of pursuing of every kind of structure is low dark noise, high time resolution and can integrated level.Meanwhile, in guaranteeing device superperformance, its manufacture craft also needs simple and convenient and economical, and therefore, the single-photon avalanche diode that can realize with standard CMOS process just accords with the demands of the market.
The single-photon-level resolution sensor unit structure that the present invention proposes, in guaranteeing device premium properties, based on standard CMOS process design, therefore can carry out large-scale integrated completely easily, solves the difficult point profit problem existing in prior art.
Summary of the invention
The invention provides a kind of single-photon-level resolution sensor unit structure based on standard CMOS process, this sensor unit structure uses a kind of single-photon avalanche diode (SPAD), and its basic structure is configured to: P type silicon substrate (4) top is provided with dark N trap (3); P well area (2) is formed at dark N trap (3) top and is encased by dark N trap (3); Anode contact (9) is connected to P well area (2) by territory, heavily doped p type island region (1); Negative electrode contact (10) is connected to N well area (6) and dark N trap (3) by heavily doped N-type region (5); Shallow trench isolation region (7) is positioned between P well area (2) and N well area (6), and P trap and N trap are kept apart; Shallow trench isolation region is provided with the guard ring (8) of P type doping for (7) one weeks, to contain the dark noise producing due to defect in shallow trench isolation; PN junction (11) between bottom and the dark N trap (3) of P well area (2), when apply suitable bias voltage between negative electrode and positive electrode, PN junction is operated under Geiger mode angular position digitizer, PN junction produces higher-pressure region, form SPAD multiplication regions, carry out detection of photons with this, and make the edge breakdown voltage of PN junction higher than the puncture voltage of the plane multiplication regions of SPAD by the concentration gradient of controlling dark N trap (3), thereby guarantee that device is normally operated in Geiger mode angular position digitizer, carry out the detection of photon.
The invention has the beneficial effects as follows: (1) device architecture is simple, manufacture craft is completely compatible, economical and practical with standard CMOS process; (2), by shallow trench isolation and P type doping guard ring, effectively reduce the dark noise of device; (3) device scalability is good, is beneficial to the large-scale integrated that improves device.
Accompanying drawing explanation
Now describe theme of the present invention in detail with reference to the following drawings is concrete, and be expressly understood related structure of the present invention and implementation method with and object, Characteristics and advantages:
Fig. 1 is the single-photon-level resolution sensor unit structure schematic diagram that the present invention is based on standard CMOS process.
Fig. 2 is single-photon-level resolution working sensor voltage mode figure of the present invention.
Fig. 3 is single-photon-level resolution working sensor schematic diagram of the present invention.
Fig. 4 is avalanche multiplication principle schematic.
Embodiment
In the following detailed description, specific details is described to provide inventing comprehensive understanding, as mentioned before, if will understand the type opposite (being that the doping of P type is replaced in N-type doping) of semiconductor doping, and voltage, anode and negative electrode etc. are suitably contrary, the example providing about P type and n type material uses on an equal basis.The present invention supposes to adopt P type substrate, and this is the substrate type that in standard CMOS process, standard is used.
Fig. 1 is the single-photon-level resolution sensor unit structure schematic diagram that the present invention is based on standard CMOS process, and the formation of described single-photon-level resolution sensor unit structure is: P type silicon substrate (4) top is provided with dark N trap (3); P well area (2) is formed at dark N trap (3) top and is encased by dark N trap (3); Anode contact (9) is connected to P well area (2) by territory, heavily doped p type island region (1); Negative electrode contact (10) is connected to N well area (6) and dark N trap (3) by heavily doped N-type region (5); Shallow trench isolation region (7) is positioned between P well area (2) and N well area (6), and P trap and N trap are kept apart; Shallow trench isolation region is provided with the guard ring (8) of P type doping for (7) one weeks, to contain the dark noise producing due to defect in shallow trench isolation; PN junction (11) between bottom and the dark N trap (3) of P well area (2), when apply suitable bias voltage between negative electrode and positive electrode time, PN junction produces higher-pressure region, form SPAD multiplication regions, carry out detection of photons with this, and make the edge breakdown voltage of PN junction higher than the puncture voltage of the plane multiplication regions of SPAD by the concentration gradient of controlling dark N trap (3).
Working mechanism and the process of the described single-photon-level resolution transducer based on standard CMOS process are as follows:
As shown in Figure 2, apply suitable bias voltage between the anode of transducer and negative electrode, make the plane multiplication region PN junction (11) of its voltage difference assurance device under Geiger mode angular position digitizer pattern, operating voltage is higher than the puncture voltage of PN junction.Under this voltage difference, PN junction (11) locates to produce a depletion region, as shown in Figure 3, in this depletion region, there is a highfield, this electric field enough guarantees that the charge carrier in this region can obtain enough energy and produce snowslide by impact ionization effect, thereby produces a large avalanche current.
In the time having light to incide in depletion region, the energy of incident photon is absorbed by semiconductor silicon, produces electron hole pair, as shown in Figure 4.Under highfield effect, the upwards accelerated motion of the electronics of generation, thus obtain enough energy, in the time that this electronics and silicon crystal lattice atom bump, can the electron collision on valence link out, become conduction electrons, produce a hole, so a charge carrier becomes three charge carriers simultaneously.In like manner, also can continue to bump in the electronics of generation and hole, so continue, and charge carrier just rolls up, and produce avalanche effect.From its final result, transducer has converted an incident photon to numerous charge carrier, thereby between negative electrode and anode, produces a large Observable electric current, has realized the detection to single photon.
An important performance of single-photon-level resolution transducer is exactly its dark noise, i.e. the inner caused avalanche effect of charge carrier of transducer itself.If dark noise is very high, will cover low light level signal, by light signal and dark noise obscures and whether Fen Buxiao Chu has photon incident.Therefore it is extremely important, suppressing dark noise.In the present invention; at the guard ring that has a P type doping for a week of shallow trench isolation regions; this guard ring has effectively suppressed the contribution to device dark noise of a large amount of defects of existing in shallow trench isolation, thereby has reduced significantly the dark noise of transducer, has improved the service behaviour of transducer.
In sum, the present invention is based on standard CMOS process, designed a kind of single-photon-level resolution sensor unit structure, realize the detection to faint light or even single photon, the production technology of having simplified single-photon-level resolution transducer, has reduced production cost, has improved detection efficient.Therefore as mentioned before, if will understand the type opposite (being that the doping of P type is replaced in N-type doping) of semiconductor doping, and voltage, anode and negative electrode etc. are suitably contrary, the example providing about P type and n type material uses on an equal basis, is no more than the core connotation of device architecture of the present invention.The present invention supposes to adopt P type substrate, and this is the substrate type that in standard CMOS process, standard is used.
Claims (4)
1. the single-photon-level resolution sensor unit structure based on standard CMOS process, this sensor unit structure uses a kind of single-photon avalanche diode (SPAD), and described SPAD architectural feature is: P type silicon substrate (4) top is provided with dark N trap (3); P well area (2) is formed at dark N trap (3) top and is encased by dark N trap (3); Anode contact (9) is connected to P well area (2) by territory, heavily doped p type island region (1); Negative electrode contact (10) is connected to N well area (6) and dark N trap (3) by heavily doped N-type region (5); Shallow trench isolation region (7) is positioned between P well area (2) and N well area (6), and P trap and N trap are kept apart; Shallow trench isolation region is provided with the guard ring (8) of P type doping for (7) one weeks, to contain the dark noise producing due to defect in shallow trench isolation; PN junction (11) between bottom and the dark N trap (3) of P well area (2), when apply suitable bias voltage between negative electrode and positive electrode, PN junction is operated under Geiger mode angular position digitizer, PN junction produces higher-pressure region, form SPAD multiplication regions, carry out detection of photons with this, and make the edge breakdown voltage of PN junction higher than the puncture voltage of the plane multiplication regions of SPAD by the concentration gradient of controlling dark N trap (3), thereby guarantee that device is normally operated in Geiger mode angular position digitizer, carry out the detection of photon.
2. SPAD according to claim 1, wherein said shallow trench isolation region (7), is characterized in that, P well area (2) and N well area (6) are effectively kept apart.
3. according to the SPAD described in claim; the guard ring (8) of wherein said P type doping; it is characterized in that; be positioned at shallow trench isolation region (7) surrounding, the charge carrier that the defect in shallow trench isolation region is produced is isolated from outside PN junction (11) multiplication regions.
4. according to the SPAD described in claim 1 to 3, it is characterized in that, between negative electrode and positive electrode, apply suitable bias voltage, PN junction (11) is operated under Geiger mode angular position digitizer, with this, incident light is surveyed.
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| CN104810377A (en) * | 2015-03-04 | 2015-07-29 | 南京邮电大学 | High-integration single-photon avalanche diode detector array unit |
| CN105810775A (en) * | 2014-12-31 | 2016-07-27 | 湘潭大学 | CMOS image sensor technology-based NP type single-photon avalanche diode |
| CN106057958A (en) * | 2016-08-08 | 2016-10-26 | 杭州电子科技大学 | Single photon avalanche photodiode and manufacturing method thereof |
| CN106298816A (en) * | 2016-10-11 | 2017-01-04 | 天津大学 | The single-photon avalanche diode of integrated cancellation resistance and manufacture method thereof |
| CN106356290A (en) * | 2016-10-28 | 2017-01-25 | 中国电子科技集团公司第四十四研究所 | 1064nm silicon-based avalanche detector and production method thereof |
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