CN103779269A - Method for processing copper surface of interconnected wire - Google Patents

Method for processing copper surface of interconnected wire Download PDF

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Publication number
CN103779269A
CN103779269A CN201210414645.0A CN201210414645A CN103779269A CN 103779269 A CN103779269 A CN 103779269A CN 201210414645 A CN201210414645 A CN 201210414645A CN 103779269 A CN103779269 A CN 103779269A
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CN
China
Prior art keywords
copper
degrees celsius
interconnecting line
copper interconnecting
line surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210414645.0A
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Chinese (zh)
Inventor
平延磊
鲍宇
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN201210414645.0A priority Critical patent/CN103779269A/en
Publication of CN103779269A publication Critical patent/CN103779269A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76858—After-treatment introducing at least one additional element into the layer by diffusing alloying elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention discloses a method for processing the copper surface of an interconnected wire. A step of forming an aluminum cover layer on the surface of a copper interconnected wire by using selective aluminum deposition and a step of processing the aluminum cover layer by using a plasma beam in reductive gas atmosphere are executed cyclically. Aluminum atoms are gradually dissolved into the surface of the copper interconnected wire in order to form a copper aluminum alloy cover layer on the surface of the copper interconnected wire. The mobility of the copper aluminum alloy cover layer is less than that of the aluminum cover layer, so a problem of semiconductor device failure caused by electro mobility of the interconnected wire is suppressed while copper atoms are prevented from diffusing.

Description

Copper surface-treated method in interconnection
Technical field
The present invention relates to semiconductor device processing technology field, relate in particular to a kind of copper surface-treated method in interconnection.
Background technology
Along with the development of semiconductor fabrication process, the area of semiconductor chip is more and more less, and meanwhile, the quantity of the semiconductor device on a semiconductor chip is also more and more.In semiconductor circuit, the signal transmission between semiconductor device needs highdensity metal interconnecting wires, but the large resistance that these metal interconnecting wires bring and parasitic capacitance have become the principal element of restriction speed of semiconductor circuitry.
In traditional semiconductor technology, the metal interconnecting wires of metallic aluminium between being generally used as during semiconductor, along with the development of semiconductor technology, metallic aluminium interconnection line is replaced by metallic copper interconnection line gradually, this is because metallic copper has less resistance value compared with metallic aluminium, and higher deelectric transferred ability, adopt metallic copper interconnection line can improve the transmission speed of signal between semiconductor device; On the other hand, low dielectric constant insulating material (lowk) is used as the dielectric layer of metal interlevel, has reduced the parasitic capacitance between metal level.
But also exist corresponding problem when the practical application as interconnection line with metallic copper, because the diffusivity of metallic copper is very high, while using metallic copper filling groove (trench) and through hole (via), be easy to diffuse into the insulating barrier on its surface at the copper atom of flute surfaces or through-hole surfaces, cause the insulating properties of insulating barrier to reduce, affect the performance of semiconductor device, and because the electromigration of metallic copper is also very high, semiconductor device is in use because electromigratory effect meeting forms cavity in copper interconnecting line or thrust (hilllock) causes open failure or short-circuit failure.
In prior art for the diffusion phenomena that solve copper interconnecting line form one deck diffusion impervious layer on copper interconnecting line surface conventionally, to suppress the diffusion of copper atom, as formed gold layer aluminium lid layer, cupromanganese cap rock, copper tungsten phosphorus cap rock, nitrogenize copper silicon cap rock on copper interconnecting line surface or forming metallic cobalt cap rock.Although but above-mentioned cap rock can prevent copper atom diffusion, itself also there is the open failure that causes due to electromigration or the problem of short-circuit failure.
Summary of the invention
In view of the problem of prior art, the invention provides a kind of copper surface-treated method in interconnection, to solve the problem reducing due to the semiconductor device reliability that copper atom spreads and electromigration causes simultaneously.
The technical solution used in the present invention is as follows: a kind of copper surface-treated method in interconnection, comprising:
Steps A: the interconnection structure with copper interconnecting line is provided;
Step B: use predecessor to carry out selectivity deposition of aluminum on copper interconnecting line surface;
Step C: under reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface;
Step D: circulation step B and step C are to pre-determined number, to form albronze cap rock on described copper interconnecting line surface.
Further, before described step B, also comprise the step of the oxide of removing copper interconnecting line surface.
Further, under reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface with remove oxide.
Further, under described reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface comprise to remove oxide the one or the combination in any that use hydrogen, ammonia, helium or argon gas, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treats or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment that power is 20W to 2000W.
Further, the predecessor in described step B comprises TMAAB(trimethylamine aluminoborane), DMAH(hydrogenation dimethyl aluminium), TMAA(trimethylamine three aluminum hydride), TEAA(triethylamine three aluminum hydride), DEACI(diethyl aluminum chloride), TIBA(triisobutyl aluminium), TEA(tri-second aluminium), TMA(trimethyl aluminium) or DMEAA(dimethyl amine three aluminum hydride) in any one.
The thickness of the albronze cap rock further, forming in described step D is 1 to 20 dust.
Further, in described step D, pre-determined number is 1-200 time.
Further, in described step C, under reducibility gas atmosphere, use beam-plasma to process described copper interconnecting line surface and comprise the one or the combination in any that use hydrogen, ammonia, helium or argon gas, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treats or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment that power is 20W to 2000W.
Adopt copper surface-treated method in interconnection provided by the present invention, the execution of circulation is formed aluminium lid layer and under reducibility gas atmosphere, uses beam-plasma to process two step of aluminium lid layer on copper interconnecting line surface by selectivity al deposition, aluminium atom is progressively dissolved in to copper interconnecting line surface to form albronze cap rock on copper interconnecting line surface, because the mobility of albronze cap rock is less than aluminium lid layer, therefore in preventing copper atom diffusion, also suppress the semiconductor device failure problem that interconnection line electromigration causes.
Accompanying drawing explanation
Fig. 1 is the flow chart of copper surface treatment method in a kind of interconnection of the present invention.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As the exemplary embodiments of copper surface treatment method in a kind of interconnection of the present invention, as shown in Figure 1, comprising:
Steps A 1: the interconnection structure with copper interconnecting line is provided;
Steps A 2: under reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface with remove oxide, as preferably, under reducibility gas atmosphere, use beam-plasma processing or heat treatment copper interconnecting line surface to remove oxide, wherein, comprise use hydrogen, ammonia, helium, or the one of argon gas or combination in any, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treat or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment that power is 20W to 2000W,
Step B: use predecessor to carry out selectivity deposition of aluminum on copper interconnecting line surface, to form aluminium lid layer on copper interconnecting line surface; Because the activation energy in the surface reaction district at dielectric medium is higher than metal surface, therefore, dielectric surfaces causes large activation energy barrier to the disengaging of protium in precursor molecules, so predecessor is difficult to adsorption-decomposition function on the surface of the dielectric medium of high activation energy, and occurs selectivity in the time of the surface deposition aluminium film of copper surface and dielectric medium; As preferably, predecessor comprises any one in TMAAB, DMAH, TMAA, TEAA, DEACI, TIBA, TEA, TMA or DMEAA;
Step C: use beam-plasma to process or heat-treated aluminum cap rock under reducibility gas atmosphere, as preferably, comprise the one or the combination in any that use hydrogen, ammonia, helium or argon gas, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treats or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment aluminium lid layer that power is 20W to 2000W; In heat treatment and plasma treatment process, due under the shock of high temperature or high energy ion, can make aluminium atom progressively dissolve in copper interconnecting line surface, therefore, can form albronze cap rock on copper interconnecting line surface, and the mobility of albronze cap rock is less than aluminium lid layer, in preventing copper atom diffusion, also suppress the semiconductor device failure problem that interconnection line electromigration causes so form albronze cap rock
Step D: circulation step B and step C be to pre-determined number, to form albronze cap rock on copper interconnecting line surface, as preferably, pre-determined number is 1-200 time, the thickness of the albronze cap rock of formation is 1 to 20 dust.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of making, be equal to replacement, improvement etc., within all should being included in the scope of protection of the invention.

Claims (8)

1. a copper surface-treated method in interconnection, comprising:
Steps A: the interconnection structure with copper interconnecting line is provided;
Step B: use predecessor to carry out selectivity deposition of aluminum on copper interconnecting line surface, to form aluminium lid layer on copper interconnecting line surface;
Step C: under reducibility gas atmosphere, use beam-plasma process or heat treatment described in aluminium lid layer;
Step D: circulation step B and step C are to pre-determined number, to form albronze cap rock on described copper interconnecting line surface.
2. method according to claim 1, is characterized in that, also comprises the step of the oxide of removing copper interconnecting line surface before described step B.
3. method according to claim 2, is characterized in that, under reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface with remove oxide.
4. method according to claim 3, it is characterized in that, under described reducibility gas atmosphere, use beam-plasma process or heat treatment described in copper interconnecting line surface comprise to remove oxide the one or the combination in any that use hydrogen, ammonia, helium or argon gas, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treats or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment that power is 20W to 2000W.
5. method according to claim 1, is characterized in that, the predecessor in described step B comprises any one in TMAAB, DMAH, TMAA, TEAA, DEACI, TIBA, TEA, TMA or DMEAA.
6. method according to claim 1, is characterized in that, the thickness of the albronze cap rock forming in described step D is 1 to 20 dust.
7. method according to claim 6, is characterized in that, in described step D, pre-determined number is 1-200 time.
8. method according to claim 1, it is characterized in that, in described step C, under reducibility gas atmosphere, use beam-plasma to process described aluminium lid layer surface and comprise the one or the combination in any that use hydrogen, ammonia, helium or argon gas, gas flow is 10sccm to 1000sccm, and in temperature is the scope of 50 degrees Celsius to 500 degrees Celsius, heat-treats or be 50 degrees Celsius to 500 degrees Celsius in temperature scope is carried out the Ion Beam Treatment that power is 20W to 2000W.
CN201210414645.0A 2012-10-26 2012-10-26 Method for processing copper surface of interconnected wire Pending CN103779269A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111029299A (en) * 2019-12-18 2020-04-17 华虹半导体(无锡)有限公司 Method for forming metal interconnection structure
US10651083B2 (en) 2018-03-05 2020-05-12 International Business Machines Corporation Graded interconnect cap

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020048926A1 (en) * 2000-09-14 2002-04-25 Konecni Anthony J. Method for forming a self-aligned copper capping diffusion barrier
US20040207093A1 (en) * 2003-04-17 2004-10-21 Sey-Shing Sun Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects
CN101154590A (en) * 2006-09-30 2008-04-02 中芯国际集成电路制造(上海)有限公司 Method for preventing copper diffusion and fabricating method for semiconductor device
CN101317261A (en) * 2005-11-28 2008-12-03 Nxp股份有限公司 Method of forming a self aligned copper capping layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020048926A1 (en) * 2000-09-14 2002-04-25 Konecni Anthony J. Method for forming a self-aligned copper capping diffusion barrier
US20040207093A1 (en) * 2003-04-17 2004-10-21 Sey-Shing Sun Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects
CN101317261A (en) * 2005-11-28 2008-12-03 Nxp股份有限公司 Method of forming a self aligned copper capping layer
CN101154590A (en) * 2006-09-30 2008-04-02 中芯国际集成电路制造(上海)有限公司 Method for preventing copper diffusion and fabricating method for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651083B2 (en) 2018-03-05 2020-05-12 International Business Machines Corporation Graded interconnect cap
CN111029299A (en) * 2019-12-18 2020-04-17 华虹半导体(无锡)有限公司 Method for forming metal interconnection structure

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Application publication date: 20140507

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