CN103697618B - Semiconductor cooler and semiconductor cooling device - Google Patents

Abstract

The invention provides a kind of semiconductor cooler and semiconductor cooling device.This semiconductor cooler comprises: first substrate, second substrate, and is arranged at least two semiconductor galvanics between first substrate and second substrate; Also comprise: be arranged on the side wall between first substrate and second substrate, side wall is centered around at least two semiconductor galvanic peripheries; Described side wall comprises the adhesive layer be fixedly connected between described first substrate and second substrate, and between first substrate and second substrate and the enhancement layer be fixedly connected on inside adhesive layer, the thermal conductivity factor of enhancement layer is lower than adhesive layer.Semiconductor cooler of the present invention, avoids extraneous humid air etc. and enters into around semiconductor galvanic and produce galvanic effect; And, the thermal loss between first substrate and second substrate caused by side wall can also be reduced, effectively improve side wall and leak thermal phenomenon, improve refrigeration or the heating effect of semiconductor cooler, and be conducive to increasing the service life.

Description

Semiconductor cooler and semiconductor cooling device

Technical field

The present invention relates to semiconductor refrigerating technology, particularly relate to a kind of semiconductor cooler and semiconductor cooling device.

Background technology

Semiconductor cooler be utilize that the Peltier effect of semi-conducting material is made, refrigeration can be produced or heat the chip of effect.

Fig. 1 is the structural representation of a kind of semiconductor cooler of the prior art; Fig. 2 be in Fig. 1 A-A to sectional view; As depicted in figs. 1 and 2, semiconductor cooler of the prior art comprises the first substrate 11, the second substrate 12 that are oppositely arranged, and be arranged on the semiconductor galvanic 13 of the multiple arranged in sequences between first substrate 11 and second substrate 12, wherein, in multiple semiconductor galvanic 13 part for N-type semiconductor galvanic couple 131, another part be P-type semiconductor galvanic couple 132, multiple semiconductor galvanic 13 arranges in multirow, and often in row, each N-type semiconductor galvanic couple and P-type semiconductor galvanic couple interval are arranged and be connected in series by conductive metal sheet 14.One in first substrate 11 or second substrate 12 can be formed with two contact conductors, such as when first substrate 11 arranging contact conductor and being connected on a dc source by this contact conductor, direct current is then by the semiconductor galvanic 13 of series connection, make heat by semiconductor galvanic 13 towards the transmission of first substrate 11 side, namely the hot junction that first substrate 11 side formation temperature is higher, the cold junction that second substrate 12 side formation temperature is lower; Wherein in order to reduce cold junction loss of refrigeration capacity, usual contact conductor is fixed in hot junction.

Generally speaking, the size of semiconductor cooler is less, leaves certain the air gap, generally within the scope of 0.5 ~ 2.5mm between first substrate 11 and second substrate 12; This gap is exposed in the surrounding environment of substrate, during refrigerator work, air in external environment directly can enter gap that first substrate 11 and second substrate 12 leave, ambient humidity one timing, refrigerator cold junction can adsorb humid air and form aqueous vapor, produce galvanic effect with semiconductor galvanic 13, directly affect service behaviour and the service life of semiconductor cooler.

Enter into impact in semiconductor cooler for avoiding extraneous humid air and ensure the reliably working of semiconductor cooler, a solution of the prior art is that first substrate 11 and second substrate 12 surrounding adhesive sealing glue are formed sealant layer, by sealing glue-line, the galvanic couple in whole semiconductor cooler and outside air are isolated, to improve service life.But, because the thermal conductivity factor of sealant layer is higher, the partial heat in hot junction can be made to be delivered to cold junction by sealant layer, namely cause " leaking heat " phenomenon, have a strong impact on the refrigeration of cold junction or the heating effect in hot junction; And be ensure that the technological parameter such as mobility, setting time of fluid sealant requires and cost factor, the fluid sealant usually adopted is 704 silica gel materials, and its thermal conductivity factor is relatively high; In addition, for ensureing gluing, the sealing reliability of sealant layer, the seal thickness W1 of sealant layer also must meet the requirements of numerical value, thus causes being difficult in prior art reach improving refrigeration (or heating) effect while the service life ensureing semiconductor cooler.

Summary of the invention

For above-mentioned defect of the prior art, the invention provides a kind of semiconductor cooler and semiconductor cooling device, realize the semiconductor galvanic to first substrate and second substrate inside and extraneous effective isolating and protecting, reduce the impact on refrigeration or heating effect simultaneously, improve functional reliability and service life.

The invention provides a kind of semiconductor cooler, comprising: first substrate, second substrate, and be arranged at least two semiconductor galvanics between described first substrate and second substrate; Also comprise: be arranged on the side wall between described first substrate and second substrate, at least two semiconductor galvanic peripheries described in described side wall is centered around; Described side wall comprises the adhesive layer be fixedly connected between described first substrate and second substrate, and between described first substrate and second substrate and the enhancement layer be fixedly connected on inside described adhesive layer, the thermal conductivity factor of described enhancement layer is lower than described adhesive layer.

The present invention also provides a kind of semiconductor cooling device, comprising: inside is formed with the casing of accommodating cavity, also comprises: be fixedly installed on semiconductor cooler on described casing, as above.

Semiconductor cooler provided by the invention and semiconductor cooling device, by arranging the side wall by enhancement layer and adhesive layer, all semiconductor galvanics can be sealed in the sealed cavity that surrounded by first substrate, second substrate and side wall, avoid extraneous humid air etc. and enter into around semiconductor galvanic and cause galvanic effect; And, the thermal loss between first substrate and second substrate caused by side wall can also be reduced, effectively improve and leak thermal phenomenon, improve refrigeration or the heating effect of semiconductor cooler, and be conducive to increasing the service life.

Accompanying drawing explanation

Fig. 1 is the structural representation of a kind of semiconductor cooler of the prior art;

Fig. 2 be in Fig. 1 A-A to sectional view;

Fig. 3 is the cross-sectional view of semiconductor cooler one embodiment of the present invention;

Fig. 4 is the stereogram of another embodiment of semiconductor cooler of the present invention;

Fig. 5 be in Fig. 4 B-B to sectional view;

Fig. 6 is I place's enlarged drawing in Fig. 5.

Detailed description of the invention

Embodiment one

Fig. 3 is the cross-sectional view of semiconductor cooler one embodiment of the present invention; Please refer to Fig. 3, the present embodiment provides a kind of semiconductor cooler, comprising: first substrate 11, second substrate 12, and is arranged at least two semiconductor galvanics 13 between first substrate 11 and second substrate 12; Also comprise: be arranged on the side wall 2 between first substrate 11 and second substrate 12, it is peripheral that side wall 2 is centered around above-mentioned at least two semiconductor galvanics 13; Side wall 2 can comprise the adhesive layer 21 be fixedly connected between first substrate 11 and second substrate 12, and between first substrate 11 and second substrate 12 and the enhancement layer 22 be fixedly connected on inside adhesive layer, the thermal conductivity factor of enhancement layer 22 is lower than adhesive layer 21.

Particularly, first substrate 11 and second substrate 12 can be plane ceramic wafer; First substrate 11 and second substrate 12 can be arranged in parallel and in a distance, multiple semiconductor galvanic 13 can in the gap of arranged in sequence between first substrate 11 and second substrate 12, such as, electricity series connection, hot parallel way can be adopted between semiconductor galvanic 13.Wherein, semiconductor galvanic 13 sum can be 2K, comprises K N-type semiconductor galvanic couple and K P-type semiconductor galvanic couple, namely multiple semiconductor galvanic 13 arranged in sequence refers between first substrate 11 and second substrate 12,2K semiconductor galvanic 13 can arrange by any form that this area is conventional, such as, 2K semiconductor galvanic 13 can arrange by matrix, and often row comprises N-type semiconductor galvanic couple and the P-type semiconductor galvanic couple of equal number, and N-type semiconductor galvanic couple and P-type semiconductor galvanic couple interval are arranged in this row, further, (such as copper sheet) is connected respectively by conductive metal sheet 15 in adjacent N-type semiconductor galvanic couple and the top of P-type semiconductor galvanic couple or bottom, with when applying DC voltage to semiconductor galvanic, semi-conducting material Peltier effect is utilized to be formed cold respectively at semiconductor galvanic 13 two ends, hot junction, owing to adopting hot parallel way between galvanic couple, thus make the cold junction substrate that first substrate 11 side formation temperature is lower, the hot junction substrate that second substrate 12 side formation temperature is lower, or the hot junction substrate that first substrate 11 side formation temperature is higher, the cold junction substrate that second substrate 12 side formation temperature is lower.Wherein cold junction, hot junction are comparatively speaking, and namely hot-side temperature is higher than cold junction temperature.

The height of multiple semiconductor galvanic 13 determines the spacing between first substrate 11 and second substrate 12, to be arranged successively the end of to conductive metal sheet 15, semiconductor galvanic 13 and conductive metal sheet (containing welding material) 15 by top in this spacing, and each conductive metal sheet 15 is welded and fixed with same one end of adjacent two semiconductor galvanics 13 respectively.Between first substrate 11 and second substrate 12 side wall 2 is set around all semiconductor galvanics 13, side wall 2 can be embedded in enhancement layer 22 together and adhesive layer 21 forms by inside and outside, and, the top of adhesive layer 21 can be fixedly connected with second substrate 12 with first substrate 11 respectively with bottom, the top of enhancement layer 22 then can adopt with first substrate 11, between bottom with second substrate 12 and only contact and the form that is not fixedly connected with, and realizes the fixing of side wall 2 by means of only being fixedly connected with between enhancement layer 22 lateral surface with adhesive layer 21 medial surface.

Particularly, the size of first substrate 11 and second substrate 12 can be the same or different, and semiconductor galvanic 13 is arranged in the gap that first substrate 11 and second substrate 12 opposite segments surround all the time; Side wall 2 need ensure that outer ring surrounds all semiconductor galvanics 13, that is, make first substrate 11, second substrate 12 and side wall 2 jointly surround a closed space, and semiconductor galvanic 13 is arranged in this space closed.Such as, when first substrate 11 be less than second substrate 12 and first substrate 11 projection vertically to drop on completely on second substrate 12 and first substrate 11 is positioned at above second substrate time, side wall 2 can be made to be formed at the surrounding edge place of first substrate 11, can make that the top of side wall 2 is fixedly connected with the bottom edge of first substrate 11, the bottom of side wall 2 is fixedly connected with the end face of second substrate 12, or, also can make that the side, top of side wall 2 is fixedly connected with the side, edge of first substrate 11, bottom is fixedly connected with the end face of second substrate 12.Certainly, relative and first substrate 11 and second substrate 12 the position of side wall 2 is not limited in this, only needs guarantee to be fully enclosed in by semiconductor galvanic interior.

The semiconductor cooler that the present embodiment provides, may be used on any needs refrigeration or the device that heats.When for the refrigerating plant such as refrigerator, wine cabinet, by the cold junction of semiconductor cooler towards in the casing of refrigerating plant, and can strengthen heat exchange further by heat-exchanger rig, improve the refrigeration to box house; Otherwise, when the semiconductor cooler of the present embodiment is used for the heating combined equipments such as incubator, by the hot junction of this semiconductor cooler towards in casing, and heat exchange can be strengthened further by heat-exchanger rig, ensure temperature in casing to control more than preset temperature, realize insulation object.

The thermal conductivity factor of the enhancement layer 22 in above-mentioned side wall should be less than adhesive layer 21, such as, enhancement layer 22 can adopt ethylene-vinyl acetate copolymer (ethylene-vinylacetatecopo, EVA) sponge, polyester form are made, simultaneously, adhesive layer 21 can adopt has fluid sealant that is well gluing, sealability, and as 704 auto-vulcanization silicon rubber, namely adhesive layer 21 is sealant layer; In addition, the width of enhancement layer 22 can be greater than adhesive layer 21, and preferably, the width of enhancement layer 22 can be 5 ~ 10 times of the width of adhesive layer 21.Wherein, width refers in the plane being parallel to first substrate 11 or second substrate 12, has the direction pointing to outside inside side wall.

Below the refrigeration of the semiconductor cooler provided the present embodiment and semiconductor cooler of the prior art is compared.Namely the refrigerating capacity of the semiconductor cooler of three kinds of different structures that prior art one, prior art two and the present embodiment provide is compared, wherein, in these three kinds of structures, include first substrate 11, second substrate 12 and n semiconductor galvanic 13, wherein each semiconductor galvanic is cross section is foursquare prism, and is welded to connect by conductive metal sheet 15 between adjacent N-type semiconductor galvanic couple and P-type semiconductor galvanic couple.Difference is only, in the semiconductor cooler that prior art one provides, the gap between first substrate and second substrate exposes completely; In the semiconductor cooler that prior art two provides, be W by width ₁sealant layer seal up semiconductor galvanic peripheral clearance between first substrate and second substrate; In the semiconductor cooler that the present embodiment provides, arrange between first substrate and second substrate be made up of enhancement layer and adhesive layer but the side wall 2 identical with the sealant layer of prior art two such as appearance and size.

One, the refrigeratory capacity Q of semiconductor cooler that provides of prior art one _c0for:

$Q_{c0}=n({\mathrm{\α}}_P-{\mathrm{\α}}_N){\mathrm{IT}}_c-n\frac{L_0^2}{H}({\mathrm{\κ}}_P+{\mathrm{\κ}}_N)(T_h-T_c)-0.5n{I}^2\frac{H}{L_0^2}(\frac{1}{{\mathrm{\σ}}_P}+\frac{1}{{\mathrm{\σ}}_N})$

Wherein, H is the gap (i.e. the first distance) formed between first substrate and second substrate; L ₀for the cross section length of side of each semiconductor galvanic; α _p, α _nbe respectively the Seebeck coefficient of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; k _p, k _nbe respectively the thermal conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple, σ _p, σ _nbe respectively the electrical conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; T _c, T _hbe respectively cold junction substrate temperature and the hot junction substrate temperature of semiconductor cooler; I is applied to the operating current on this semiconductor cooler.

Two, the semiconductor cooler that provides of prior art two is on the architecture basics of prior art one, and between first substrate and second substrate, fill the sealant layer that 704 auto-vulcanization silicon rubber are formed, wherein, the girth of sealing glue-line is L ₁, width is W ₁; The then refrigeratory capacity Q of its correspondence _c1for:

$\begin{array}{c}{Q}_{c1}=n({\mathrm{\α}}_P-{\mathrm{\α}}_N){\mathrm{IT}}_c-n\frac{L_0^2}{H}({\mathrm{\κ}}_P+{\mathrm{\κ}}_N)(T_h-T_c)-0.5n{I}^2\frac{H}{L_0^2}(\frac{1}{{\mathrm{\σ}}_P}+\frac{1}{{\mathrm{\σ}}_N})-{\mathrm{\κ}}_1\frac{L_1{W}_1}{H}(T_h-T_c)\\ =Q_{c0}-{\mathrm{\κ}}_1\frac{L_1{W}_1}{H}(T_h-T_c)\end{array}$

Wherein, H is the gap formed between first substrate and second substrate; L ₀for the cross section length of side of semiconductor galvanic 13; α _p, α _nbe respectively the Seebeck coefficient of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; k _p, k _nbe respectively the thermal conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; σ _p, σ _nbe respectively the electrical conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; T _c, T _hbe respectively semiconductor cooler cold junction substrate temperature and hot junction substrate temperature; I is operating current; k ₁for the thermal conductivity factor of sealant layer; Q _c0be the refrigeratory capacity of the semiconductor cooler of aforementioned prior art one;

Order

${\mathrm{\κ}}_1\frac{L_1{W}_1}{H}(T_h-T_c)=Q_{c1}^{\′}$

Then the refrigeratory capacity of prior art two can be reduced to:

$Q_{c1}=Q_{c0}-{\mathrm{\κ}}_1\frac{L_1{W}_1}{H}(T_h-T_c)=Q_{c0}-Q_{c1}^{\′}$

As can be seen here, Q' _c1for the heat (namely leaking the heat of heat) conducted by sealant layer.

Three, for the semiconductor cooler that the present embodiment provides, please refer to Fig. 6, the profile of side wall 2 and size can be consistent with the sealant layer of above-mentioned prior art two, and namely the girth of side wall 2 is L ₁, overall width is still W ₁, enhancement layer 22 width is W ₂, then refrigeratory capacity Q _c2for:

$\begin{array}{c}{Q}_{c2}=n({\mathrm{\α}}_P-{\mathrm{\α}}_N){\mathrm{IT}}_c-n\frac{L_0^2}{H}({\mathrm{\κ}}_P+{\mathrm{\κ}}_N)(T_h-T_c)-0.5n{I}^2\frac{H}{L_0^2}(\frac{1}{{\mathrm{\σ}}_P}+\frac{1}{{\mathrm{\σ}}_N})-[{\mathrm{\κ}}_1\frac{L_1(W_1-W_2)}{H}+{\mathrm{\κ}}_2\frac{L_1{W}_2}{H}](T_h-T_c)\\ =Q_{c0}-Q_{c1}^{\′}+({\mathrm{\κ}}_1-{\mathrm{\κ}}_2)\frac{L_1{W}_2}{H}(T_h-T_c)=Q_{c1}+({\mathrm{\κ}}_1-{\mathrm{\κ}}_2)\frac{L_1{W}_2}{H}(T_h-T_c)\end{array}$

Wherein, H is the gap formed between first substrate and second substrate; L ₀for the cross section length of side of semiconductor galvanic; α _p, α _nbe respectively the Seebeck coefficient of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; k _p, k _nbe respectively the thermal conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple, σ _p, σ _nbe respectively the electrical conductivity of P-type semiconductor galvanic couple and N-type semiconductor galvanic couple; T _c, T _hbe respectively cold junction substrate temperature and the hot junction substrate temperature of semiconductor cooler; I is operating current; k ₁and k ₂be respectively the thermal conductivity factor of adhesive layer and enhancement layer; Q _c0be the refrigeratory capacity of the semiconductor cooler of prior art one under similarity condition;

Order

$({\mathrm{\κ}}_1-{\mathrm{\κ}}_2)\frac{L_1{W}_2}{H}(T_h-T_c)=\mathrm{\ΔQ}$

The refrigeratory capacity of semiconductor cooler that then the present embodiment provides can be reduced to:

Q _c2=Q _c1+ΔQ

From above formula, the semiconductor cooler that the present embodiment provides, its refrigeratory capacity Q _c2with the refrigeratory capacity Q of the semiconductor cooler of the second structure in prior art _c1compare, add on the contrary, and recruitment is Δ Q.

As can be seen here, the semiconductor cooler that the present embodiment provides can compensate the thermal loss caused because leaking thermal phenomenon, effectively ensures its refrigeration or heating effect.

Preferably, when the thermal conductivity factor of adhesive layer 21 is 10 times of enhancement layer 22, i.e. κ ₂=0.1 κ ₁, and the width of enhancement layer is 10 times of adhesive layer, i.e. W ₂=10 (W ₁-W ₂) time, then the refrigeratory capacity of semiconductor cooler that the present embodiment provides is:

$Q_{c2}=Q_{c0}-0.19Q_{c1}^{\′}=Q_{c1}+0.81Q_{c1}^{\′}=Q_{c1}+0.81{\mathrm{\κ}}_1\frac{L_1{W}_1}{H}(T_h-T_c)$

Can be determined by above formula, compared with the single sealant layer provided with prior art two and the semiconductor cooler of adhesive layer, leaking heat can be reduced 81% by the composite sidewall structure that the present embodiment provides.

The semiconductor cooler that the present embodiment provides is in process, can after first substrate 11, second substrate 12 and multiple semiconductor galvanic 13 have been assembled, the enhancement layer 22 be wound around outside multiple semiconductor galvanic 13 is first set between first substrate 11 and second substrate 12, and then form adhesive layer 21 at the outer applying paste of this enhancement layer 22 etc. between first substrate 11 and second substrate 12, and ensure that adhesive layer 21 and being tightly connected between first substrate 11 and second substrate 12.

The semiconductor cooler that the present embodiment provides, by arranging the side wall by enhancement layer and adhesive layer, all semiconductor galvanics can be sealed in the sealed cavity that surrounded by first substrate, second substrate and side wall, avoid extraneous humid air etc. and enter into around semiconductor galvanic and produce galvanic effect; And, the thermal loss caused by side wall can also be reduced, effectively improve and leak thermal phenomenon, improve refrigeration or the heating effect of semiconductor cooler.

Embodiment two

Fig. 4 is the stereogram of another embodiment of semiconductor cooler of the present invention; Fig. 5 be in Fig. 4 B-B to sectional view; Fig. 6 is I place's enlarged drawing in Fig. 5; The present embodiment, by being identical rectangular slab for first substrate, second substrate, further illustrates technical scheme of the present invention.

As Figure 4-Figure 6, in the present embodiment, first substrate 11 and second substrate 12 are that be oppositely arranged, measure-alike rectangular slab, the rectangular frame of side wall 2; For rectangular box-like enhancement layer 22, outside are rectangular box-like adhesive layer 21 inside side wall 2; In enhancement layer 22, be provided with the semiconductor galvanic 13 of even number by default aligned transfer between first substrate 11 and second substrate 12, wherein, the concrete structures such as the arrangement mode of semiconductor galvanic 13 and embodiment one similar.The thermal conductivity factor of enhancement layer 22 is less than adhesive layer; Such as, enhancement layer 22 can be sea slick, and adhesive layer 21 is the sealant layer formed by 704 glue; The width of enhancement layer 22 is 5 ~ 10 times of the width of adhesive layer 21, preferably, can be 10 times.

Particularly, enhancement layer 22 can for being pressed on the elastic layer between first substrate 11 and second substrate 12.Such as, enhancement layer 22 can certain flexible material makes for rubber or sponge etc. have, like this when semiconductor cooler is used in the obvious external environment of variations in temperature, the elasticity of enhancement layer 22 can allow by first substrate 11, the seal cavity that second substrate 12 and side wall 3 surround produces certain change, thus adapt to the change of expanding with heat and contract with cold of its inner air, sealing cavity inside air heats is avoided to expand and cause the junction of side wall and first substrate or second substrate to be damaged, ensure that functional reliability, improve the adaptive capacity of semiconductor cooler.

Preferably, the original thickness of the enhancement layer 22 that sponge or rubber elastomeric material are made can be a bit larger tham the gap H between first substrate 11 and second substrate 12, namely can adopt interference fit between enhancement layer 22 and this gap, to ensure structural strength, improve sealing property further.

Further, enhancement layer 22 rectangle frame that can be formed in one; Also can for the rectangle frame surrounded by four each and every one sections of enhancing, such as, when the cavernous body of strip can be adopted as described enhancing section, three enhancing sections are bonded into and are formed as one " U " shape, the remaining next one independently section of enhancing then can be arranged on the opening part of this " U " shape, and contact conductor runs through this remainder, independent enhancing section.Preferably, can be concordant with the outer rim of second substrate 12 with first substrate 11 outside adhesive layer 21.To facilitate manufacturing process.

Further, first substrate 11 or second substrate 12 also can be connected with pair of electrodes lead-in wire 17, and contact conductor 17 passes enhancement layer 22 and adhesive layer 21 successively, extends to outside side wall 2.Wherein, contact conductor 17 can need to be connected with first substrate 11 or second substrate 12 according to freezing or heating principle, to apply operating current to the semiconductor galvanic 13 on this first substrate 11 or second substrate 12, impels transfer of heat, forms end and hot junction.

Other function of the semiconductor cooler of the present embodiment and technique effect and previous embodiment similar, repeat no more herein.

Embodiment three

The present embodiment provides a kind of semiconductor cooling device, comprising: inside is formed with the casing of accommodating cavity, also comprises: be fixedly installed on described casing, as above described in any embodiment semiconductor cooler.Wherein, semiconductor cooler can be fixedly mounted on top or the side wall of casing, and can also arrange tube sheet absorber plate and tube sheet radiator on this casing, works with conjunction with semiconductors refrigerator; Such as, time in this casing for refrigerating purposes, the refrigeration end of semiconductor cooler can be positioned at casing, heating end then can be positioned at outside casing, simultaneously, tube sheet absorber plate is arranged on the refrigeration end of semiconductor cooler, to play absorption refrigeration, tube sheet radiator is arranged on the heating end of peninsula chiller, for being dispersed into outside casing 10 by the heat in process of refrigerastion.

Be understandable that, the semiconductor cooling device that the present embodiment provides also can be used as insulation purposes, now, only need by the hot junction of semiconductor cooler towards in casing, cold junction towards casing outward.

The semiconductor device that the present embodiment provides, in semiconductor cooler as its core work parts, by arranging the side wall by enhancement layer and adhesive layer, all semiconductor galvanics can be sealed in the sealed cavity that surrounded by first substrate, second substrate and side wall, effectively prevent extraneous humid air etc. enters into around semiconductor galvanic, thus effectively prevent the galvanic couple thermoelectricity capability decline caused because galvanic couple produces galvanic effect, ensure that reliably working, extend service life; And, the thermal loss caused by side wall can also be reduced, effectively improve and leak thermal phenomenon, and then improve refrigeration or the heating effect of semiconductor cooler.

Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.

Claims (9)

1. a semiconductor cooler, comprising: first substrate, second substrate, and is arranged at least two semiconductor galvanics between described first substrate and second substrate; It is characterized in that, also comprise: be arranged on the side wall between described first substrate and second substrate, at least two semiconductor galvanic peripheries described in described side wall is centered around; Described side wall comprises the adhesive layer be fixedly connected between described first substrate and second substrate, and between described first substrate and second substrate and the enhancement layer be fixedly connected on inside described adhesive layer, the thermal conductivity factor of described enhancement layer is lower than described adhesive layer; Described enhancement layer is be pressed on the elastic layer between described first substrate and second substrate.

2. semiconductor cooler according to claim 1, is characterized in that, the width of described enhancement layer is greater than described adhesive layer.

3. semiconductor cooler according to claim 2, is characterized in that, the width of described enhancement layer is 5 ~ 10 times of the width of described adhesive layer

4., according to the arbitrary described semiconductor cooler of claim 1-3, it is characterized in that, described enhancement layer is ethylene-vinyl acetate copolymer EVA layer, and described adhesive layer is sealant layer.

5., according to the arbitrary described semiconductor cooler of claim 1-3, it is characterized in that, described first substrate and second substrate are that be oppositely arranged, measure-alike rectangular slab, the rectangular frame of described side wall; For rectangular box-like enhancement layer, outside are rectangular box-like adhesive layer inside described side wall.

6. semiconductor cooler according to claim 5, is characterized in that, described enhancement layer is the rectangle frame strengthening section surround by four.

7. semiconductor cooler according to claim 6, is characterized in that, concordant with the outer rim of second substrate with described first substrate outside described adhesive layer.

8. according to the arbitrary described semiconductor cooler of claim 1-3, it is characterized in that, described first substrate or described second substrate are also connected with pair of electrodes lead-in wire, and described contact conductor passes described enhancement layer and adhesive layer successively, extends to outside described side wall.

9. a semiconductor cooling device, comprising: inside is formed with the casing of accommodating cavity, it is characterized in that, also comprises: be fixedly installed on described casing, as arbitrary in claim 1-8 as described in semiconductor cooler.