CN103617998B - A kind of three-dimensional CMOS digital image sensor - Google Patents
A kind of three-dimensional CMOS digital image sensor Download PDFInfo
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- CN103617998B CN103617998B CN201310597097.4A CN201310597097A CN103617998B CN 103617998 B CN103617998 B CN 103617998B CN 201310597097 A CN201310597097 A CN 201310597097A CN 103617998 B CN103617998 B CN 103617998B
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Abstract
The present invention relates to a kind of three-dimensional CMOS digital image sensor, it is characterized in that, the voxel distributed by planar array is formed, and comprises the metal nano planar lens (05) for left eye and the beam splitting of right eye light be made up of metal interconnecting layer top layer and the voxel for recording left eye and right-eye image information be positioned at below metal interconnecting layer top layer; Each voxel comprises one of arranged adjacent for recording the left eye sub-pixel (08) of left-eye image information and one for recording the right eye sub-pixel (09) of right-eye image information.This imageing sensor, only need a camera lens and a transducer just can obtain 3-D view shooting, and metal nano planar lens and metal nano chromatic filter are all integrated in the metal interconnecting layer of CMOS digital image sensor standard technology, therefore have that processing compatibility is high, optical crosstalk is little, imaging resolution is high and the feature such as good stability.
Description
Technical field
The invention belongs to image and digital sensor technology field, particularly relate to a kind of three-dimensional CMOS (ComplementaryMetalOxideSemiconductor, complementary metal oxide semiconductors (CMOS)) digital image sensor based on metal nano planar lens and metal nano chromatic filter.
Background technology
The demand of the mankind to image particularly digitized video develops into colour from black and white, develops into three-dimensional from two dimension.Three-dimensional colour three-dimensional film is the fashionable whole world, and beholder can obtain the impression on the spot in person that conventional two-dimensional black-and-white image cannot present.In current dimension display technologies, generally need the separation image of right and left eyes being carried out to space, a simple technique is exactly make microtrabeculae lens on the surface of liquid crystal display to realize the beam splitting of light, the information of the corresponding right and left eyes of each pixel of the 3-dimensional image made projects different directions respectively by the microtrabeculae lens of each pixel, realizes the display of 3 D stereo.The making of 3-dimensional digital film is a very complicated process, even the 3-d photographs of static state generally all at least needs two camera lenses and two imageing sensors to take, and the obstruction that 3-dimensional image technology is universal beyond doubt.In theory the whole light path of display being turned around is exactly take light path, and therefore the record respectively of the corresponding image of right and left eyes is the technology emphasis realizing 3-D view record.Prepared by the technique that the microtrabeculae lens of large scale can utilize dielectric material to reflux in the display device, but at high resolutions, the preparation of small size microtrabeculae lens and the degeneration of its optical property are all serious problems, limit the application of microtrabeculae lens in high-resolution three-dimension cmos image sensor.In addition, existing CMOS digital image sensor adopts polymer chromatic filter usually, and its thermal stability and radiation resistance are all poor, is also unfavorable for reducing crosstalk and improving resolution.
Summary of the invention
The technical issues that need to address of the present invention are, how a kind of three-dimensional CMOS digital image sensor is provided, a camera lens and an image sensor chip only can be needed just can to realize three-dimensional image shooting function, and do not need polymer chromatic filter to realize colour imaging.
Above-mentioned technical problem of the present invention solves like this: build a kind of three-dimensional CMOS digital image sensor, it is characterized in that, the voxel distributed by planar array is formed, and comprises the metal nano planar lens for left eye and the beam splitting of right eye light be made up of metal interconnecting layer top layer and the voxel for recording left eye and right-eye image information be positioned at below metal interconnecting layer top layer; Each voxel comprises one of arranged adjacent for recording the left eye sub-pixel of left-eye image information and one for recording the right eye sub-pixel of right-eye image information.
According to three-dimensional CMOS digital image sensor provided by the invention, this three-dimensional CMOS digital image sensor also comprises the metal nano chromatic filter be made up of metal interconnecting layer bottom.
According to three-dimensional CMOS digital image sensor provided by the invention, described metal nano chromatic filter preferably obtains by preparing metal Nano structure in the metal interconnecting layer bottom of CMOS digital image sensor standard technology.
According to three-dimensional CMOS digital image sensor provided by the invention, described metal nano chromatic filter includes, but are not limited to be made up of cycle metal nano-void array, and the cycle, nano-pore diameter 100 nanometer was to 300 nanometers from 150 nanometers to 500 nanometers.
According to three-dimensional CMOS digital image sensor provided by the invention, described metal nano planar lens obtains by preparing metal Nano structure in the metal interconnecting layer top layer of CMOS digital image sensor standard technology.
According to three-dimensional CMOS digital image sensor provided by the invention, described metal nano planar lens include, but are not limited to be:
(i) be made up of one group of parallel metal slit, this slit wide from 30 nanometers to 150 nanometers, slit separation is from 50 nanometers to 150 nanometers.
(ii) be made up of the metal nanoparticle of one group of Two dimensional Distribution, nanoparticle size is from 30 nanometers to 150 nanometers, and grain spacing is from 50 nanometers to 150 nanometers.
According to three-dimensional CMOS digital image sensor provided by the invention, described metal is aluminium, copper, gold or silver-colored, preferred aluminium or copper.
According to three-dimensional CMOS digital image sensor provided by the invention, voxel is trichromatic red pixel, green pixel or blue pixel, and red (R), green (G), blue (B) pixel are alternately.
Three-dimensional CMOS digital image sensor provided by the invention, compared with prior art, the present invention has following advantage: by a pixel is divided into the photosensitive sub-pixel of two independence, record the image information of corresponding right and left eyes respectively, the 3-D view writing function of single-lens single image transducer can be realized.Simultaneously, nanocomposite optical element is prepared as beam dividing lens and chromatic filter by directly adopting the metal interconnecting layer in cmos image sensor standard technology, improve processing compatibility, overcome the unsteadiness of conventional polymeric materials under thermal environment and radiation environment.In addition, optical function is realized by metal Nano structure, achieve the optical element under sub-wavelength dimensions, imaging resolution can be improved, and being integrated into the bottom of metal interconnecting layer by further crosstalk reduction due to chromatic filter, the near-field effect that metal Nano structure strengthens will improve the response of photoelectric tube.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail further.
Fig. 1-1 is the Sample Scan electron microscope picture of the first embodiment of metal nano planar lens of the present invention;
Fig. 1-2 is incident light after through metal nano planar lens first embodiment sample in the Electric Field Distribution measurement result perpendicular to sample surfaces and in the cross section orthogonal with metallic slit;
Fig. 1-3 is incident lights after through the first embodiment sample of metal nano planar lens at the Electric Field Distribution simulation result perpendicular to sample surfaces and in the cross section orthogonal with metallic slit;
Fig. 2-1 is the structural representation of the second embodiment of metal nano planar lens of the present invention;
Fig. 2-2 is incident light Electric Field Distribution simulation results in its focal plane after the metal nano planar lens of the second embodiment through metal nano planar lens;
Fig. 2-3 is transmitted light Electric Field Distribution simulation results in the cross section of the second embodiment sample surfaces perpendicular to metal nano planar lens;
Fig. 3-1 is the first embodiment Sample Scan electron microscope picture of metal nano chromatic filter of the present invention;
Fig. 3-2 is the first embodiment sample Transmission light micrograph under white light illumination of metal nano chromatic filter;
Fig. 4-1 is the second embodiment Sample Scan electron microscope picture of metal nano chromatic filter of the present invention;
Fig. 4-2 is the second embodiment sample Transmission light micrograph under white light illumination of metal nano chromatic filter;
Fig. 5 is structural representation and the functional schematic of three-dimensional CMOS digital image sensor of the present invention;
Fig. 6 is the pixel distribution schematic diagram of three-dimensional CMOS digital image sensor of the present invention.
Embodiment
First, three-dimensional CMOS digital image sensor of the present invention is described:
By each Pixel Design being become two sub-pixels of arranged adjacent, and utilize metal nano planar lens to carry out beam splitting to the light entering right and left eyes sub-pixel, in addition the color of each pixel detection is realized selecting by metal nano chromatic filter, and these metal Nano structures are integrated in the metal interconnecting layer in cmos image sensor standard technology.
Preferably, described metal nano planar lens obtains by preparing metal Nano structure in the metal top layer of CMOS digital image sensor standard technology.
Preferably, described metal nano chromatic filter obtains by preparing metal Nano structure in the metal back layer of CMOS digital image sensor standard technology.
Preferably, described metal can be aluminium, copper, gold, silver etc., preferred CMOS standard metal materials of aluminum and copper.
Preferably, described metal nano planar lens is made up of one group of parallel metal slit, slit wide from 30 nanometers to 150 nanometers, and slit separation is from 50 nanometers to 150 nanometers.
Preferably, described metal nano planar lens is made up of the metal nanoparticle of one group of Two dimensional Distribution, and nanoparticle size is from 30 nanometers to 150 nanometers, and slit separation is from 50 nanometers to 150 nanometers.
Preferably, described metal nano chromatic filter is made up of cycle metal nano-void array, and the cycle, nano-pore diameter 100 nanometer was to 300 nanometers from 150 nanometers to 500 nanometers.
The second, do by reference to the accompanying drawings to describe in detail the present invention further:
Fig. 1 shows first embodiment of metal nano planar lens of the present invention.
Refer to shown in Fig. 1-1, this metal nano planar lens, be included in 7 slits from left to right arranged in parallel in metallic film, slit width is followed successively by 125 nanometers, 68 nanometers, 54 nanometers, 50 nanometers, 54 nanometers, 68 nanometers, 125 nanometers, wherein both sides totally 6 slits be 567 nanometers with central slit distance successively, 370 nanometers, 194 nanometers, 194 nanometers, 370 nanometers, 567 nanometers.In the present embodiment, metallic film is the aluminium film of 200 nanometers.
Fig. 1-2 and 1-3 illustrates the Electric Field Distribution of incident light after the present embodiment lens propagated from lower to upper, it is fine that the result measured and simulation result coincide, and all shows that incident light focuses on the place of about 1 micron above metal nano planar lens surface after this metal nano planar lens.
Fig. 2 shows second embodiment of metal nano planar lens of the present invention.
Refer to shown in Fig. 2-1, this metal nano planar lens, comprise 144 metal nanoparticles of Two dimensional Distribution, each metal nanoparticle shape size is identical, is all the square of the length of side 70 nanometer.These 144 metal nanoparticles along level and vertical two orthogonal directions symmetrical, four squares in bosom in level and vertical both direction all at a distance of 40 nanometers, by in four squares in bosom to every two the adjacent squares of its lateral direction successively at a distance of 45 nanometers, 55 nanometers, 65 nanometers, 85 nanometers, 120 nanometers, 180 nanometers.In the present embodiment, metal material is gold, and nano particle thickness is 100 nanometers.
Fig. 2-2 and 2-3 illustrates the incident light propagated from lower to upper after the present embodiment lens in focal plane with perpendicular to the Electric Field Distribution simulation result in the plane of focal plane, can see that incident light focuses on the place of about 1.2 microns above metal nano planar lens surface after this metal nano planar lens, and the center of convergent point is on the central shaft of metal nano planar lens.
By the metal nano planar lens of optimal design different structure, can obtain various focal length Electric Field Distribution different from focal plane lens.
Fig. 3 shows first embodiment of metal nano chromatic filter of the present invention.
Refer to shown in Fig. 3-1, this metal nano chromatic filter, the triangular crystal lattice array of circular apertures being 410 nanometers by the cycle is formed, Circularhole diameter 218 nanometer.In the present embodiment, metal material is aluminium, thickness of metal film 150 nanometer.
Fig. 3-2 illustrates the present embodiment metal nano chromatic filter under white light illumination, the transmitted light images that microscopic examination is arrived, and can see that the filter of this structure can only transmit red light.
Fig. 4 shows second embodiment of metal nano chromatic filter of the present invention.
Refer to shown in Fig. 4-1, this metal nano chromatic filter, the triangular crystal lattice array of circular apertures being 330 nanometers by the cycle is formed, Circularhole diameter 145 nanometer.In the present embodiment, metal material is aluminium, thickness of metal film 150 nanometer.
Fig. 4-2 illustrates the present embodiment metal nano chromatic filter under white light illumination, the transmitted light images that microscopic examination is arrived, and can see that the filter of this structure can only transmit green.
By the metal nano chromatic filter of optimal design different structure, the various filter through color can be obtained.
Fig. 5 shows structural representation and the functional schematic of three-dimensional CMOS digital image sensor of the present invention.01 is the left eye ken, and 02 is the right eye ken, and 03 is the lens (camera lens as digital camera) coordinating CMOS digital image sensor to use, and 04 is three-dimensional CMOS digital image sensor of the present invention.It is the primary structure schematic diagram of three-dimensional CMOS digital image sensor 04 in dotted line frame, 05 for being positioned at the metal nano planar lens of metal interconnecting layer top layer, 07 for being positioned at the metal nano chromatic filter of metal interconnecting layer bottom, 06 is other metal interconnecting layers except top layer and bottom, 08 is right eye sub-pixel photodiode, and 09 is left eye sub-pixel photodiode.During the work of this three-dimensional CMOS digital image sensor, the image information of the left eye ken 01 and the right eye ken 02 converges on transducer 04 by camera lens 03, the image information of right and left eyes by top layer the beam splitting of metal nano planar lens and realize colored selection by the metal nano chromatic filter 07 of bottom, then detected by left eye sub-pixel photodiode 09 or right eye sub-pixel photodiode 08 respectively, realize the separation of right and left eyes image information and detect simultaneously.
Fig. 6 is the pixel distribution schematic diagram of three-dimensional CMOS digital image sensor of the present invention.The different color pixel distribution situation of a unit of the pel array of periodic arrangement shown in figure, can see and be similar to traditional " Bayer " array of cmos image sensor, alternately, just each R, B, G pixel is divided into right and left eyes sub-pixel R here for primary colors red (R), green (G), blue (B) pixel
l, R
r, G
l, G
r, B
land B
r(wherein subscript L represents left eye, and subscript R represents right eye), makes the photosensitive pixel of often kind of color can record the information of right and left eyes respectively, reaches the function of three-dimensional imaging.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the claims in the present invention scope change and modify, and all should belong to the covering scope of the claims in the present invention.
Claims (10)
1. a three-dimensional CMOS digital image sensor, it is characterized in that, the voxel distributed by planar array is formed, and comprises the metal nano planar lens (05) for left eye and the beam splitting of right eye light be made up of metal interconnecting layer top layer and the voxel for recording left eye and right-eye image information be positioned at below metal interconnecting layer top layer; Each voxel comprises one of arranged adjacent for recording the left eye sub-pixel (08) of left-eye image information and one for recording the right eye sub-pixel (09) of right-eye image information.
2. three-dimensional CMOS digital image sensor according to claim 1, it is characterized in that, this three-dimensional CMOS digital image sensor also comprises the metal nano chromatic filter (07) be made up of metal interconnecting layer bottom.
3. three-dimensional CMOS digital image sensor according to claim 2, it is characterized in that, described metal nano chromatic filter (07) obtains by preparing metal Nano structure in the metal interconnecting layer bottom of CMOS digital image sensor standard technology.
4. three-dimensional CMOS digital image sensor according to claim 2, it is characterized in that, described metal nano chromatic filter (07) is made up of cycle metal nano-void array, and the cycle, nano-pore diameter 100 nanometer was to 300 nanometers from 150 nanometers to 500 nanometers.
5. three-dimensional CMOS digital image sensor according to claim 1, it is characterized in that, described metal nano planar lens (05) obtains by preparing metal Nano structure in the metal interconnecting layer top layer of CMOS digital image sensor standard technology.
6. three-dimensional CMOS digital image sensor according to any one of claim 1-5, it is characterized in that, metal nano planar lens (05) is made up of one group of parallel metal slit, this slit wide from 30 nanometers to 150 nanometers, and slit separation is from 50 nanometers to 150 nanometers.
7. three-dimensional CMOS digital image sensor according to claim 6, it is characterized in that, described metal is aluminium, copper, gold or silver-colored.
8. three-dimensional CMOS digital image sensor according to any one of claim 1-5, it is characterized in that, metal nano planar lens (05) is made up of the metal nanoparticle of one group of Two dimensional Distribution, nanoparticle size is from 30 nanometers to 150 nanometers, and grain spacing is from 50 nanometers to 150 nanometers.
9. three-dimensional CMOS digital image sensor according to claim 8, it is characterized in that, described metal is aluminium, copper, gold or silver-colored.
10. three-dimensional CMOS digital image sensor according to any one of claim 1-5, is characterized in that, voxel is trichromatic red pixel, green pixel or blue pixel, and they alternately.
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| US6795241B1 (en) * | 1998-12-10 | 2004-09-21 | Zebra Imaging, Inc. | Dynamic scalable full-parallax three-dimensional electronic display |
| CN101506982A (en) * | 2006-08-08 | 2009-08-12 | 杰尚企业株式会社 | Charge coupled device for obtaining a 3-dimensional digital image |
| CN102024833A (en) * | 2009-09-17 | 2011-04-20 | 法国原子能及替代能源委员会 | 3d imaging device, manufacturing method thereof and 3d imaging system |
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