CN103617944B - Based on photoresist interim bonding and go the method for bonding - Google Patents
Based on photoresist interim bonding and go the method for bonding Download PDFInfo
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- CN103617944B CN103617944B CN201310491592.7A CN201310491592A CN103617944B CN 103617944 B CN103617944 B CN 103617944B CN 201310491592 A CN201310491592 A CN 201310491592A CN 103617944 B CN103617944 B CN 103617944B
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Abstract
The present invention is a kind of interim bonding based on photoresist (ProLIFT100) and the method for removing bonding, it is characterized in that comprising interim bonding and removing bonding.Advantage is: some critical processes such as steps such as the etching of back face metalization, backside through vias of the compound semiconductor wafer processing such as GaAs, GaN carry out obtaining better effect more than 200 degrees Celsius under high temperature; and ProLIFT100 can tolerate the high temperature more than 300 degrees Celsius; the effect of the protection of disk front description and bonding die adhesive can be played simultaneously, be therefore highly suitable in semiconductor back surface technique for the interim bonding with slide glass.Utilize the mode of spin coating whirl coating to carry out the coating of bonding transition zone in addition, evenness and uniformity are all very good, and technique is simple, reproducible; And whole process can not cause the injuries such as wearing and tearing, contamination to temporary carrier, can recycle; Go bonding process simple, do not need the effect of applied mechanical power, the probability of fragment can be greatly reduced.
Description
Technical field
What the present invention relates to is a kind of interim bonding based on photoresist (ProLIFT100) and the method for removing bonding, belongs to semiconductor back surface technology field.
Background technology
Along with constantly riseing of semiconductor device frequency, chip thickness produces material impact to device performance, as thin chip just has a lot of advantage, improves radiating efficiency, mechanical performance and electrical property, reduces encapsulation volume, weight reduction etc.The back process of semiconductor device generally comprises the steps such as substrate thinning, via etch, back face metalization, when the substrate thinning to 150 of disk is μm even thinner, be easy to fragment occurs, and because the reason disk of stress can occur bending and deformation, cannot operate, therefore need before thinning with the interim bonding of slide glass such as sheet glass, be rely on to carry out subsequent technique making with temporary carrier.
Conventional interim bonding adopts insulating cement or wax etc. as bonding transition zone, the uniformity that these bonding materials apply usually and evenness are good not, thus have impact on the uniformity of chip thinning, make the different chip thickness difference on same disk comparatively large, reduce process allowance.The most key, these materials all can only tolerate the temperature of more than 100 degree Celsius.Along with the development of semiconductor technology, various new material, new technology continually develop application, researcher finds, the techniques such as the back face metalization of some material or backside through vias etching even just can reach best effect under the high temperature of more than 250 degrees Celsius more than 200 degrees Celsius, but at this high temperature, these bonding materials substantially all can soften or decompose, and cause the failure of technique, and interim bonding technology also just becomes the bottleneck problem of high temperature back process.
For this problem, current researcher is good solution not, can only yield employing pyroprocess, have to take the second best, seriously limit the development of technique.
Summary of the invention
What the present invention proposed is a kind of interim bonding based on photoresist (ProLIFT100) and the method for removing bonding, and its order is intended to solve semiconductor wafer back process cannot the problem of withstand high temperatures.
Technical solution of the present invention: a kind of interim bonding based on photoresist (ProLIFT100) and go the method for bonding, comprise interim bonding and remove bonding, wherein the step of interim bonding, comprises
1) with mass concentration be 10% hydrochloric acid cleaning semiconductor wafer and temporary carrier surface, rinse with deionized water again, remove surface contamination, then put into the moisture of oven for drying disk surfaces, ensure that disk surfaces is dry and comfortable pollution-free, temporary carrier is sheet glass or sapphire;
2) distinguish spin coating photoresist (ProLIFT100) as interim bonding transition zone, rotating speed 1000rpm-5000rpm in the front of semiconductor wafer and temporary carrier, the time is 60 seconds;
3) keep facing up of semiconductor wafer and temporary carrier, toast 30 minutes in an oven, oven temperature should be not less than 220 degrees Celsius;
4) after semiconductor wafer and temporary carrier at room temperature cool naturally, semiconductor wafer and temporary carrier vis-a-vis are carried out bonding die under the condition that temperature is 250 degrees Celsius, vacuum degree is less than 5mbar, pressure is greater than 4000N.
Remove bonding method, comprise the following steps:
1) semiconductor wafer and temporary carrier surface is cleaned;
2) disk is immersed in positivity developer solution;
3) after photoresist (ProLIFT100) dissolves, semiconductor wafer will be separated automatically with temporary carrier;
4) semiconductor wafer carefully picked up and clean up.
Described employing photoresist (ProLIFT100) as interim bonding transition zone, by 1) cleaning disk and temporary carrier; 2) spin coating photoresist (ProLIFT100) and be placed in 220 degrees Celsius of baking ovens toast 30 minutes; 3) under the condition that temperature is 250 degrees Celsius, vacuum is less than 5mbar, pressure is greater than 4000N, realize the bonding of semiconductor wafer and temporary carrier, enable semiconductor device technique for manufacturing back tolerate high temperature more than 300 degrees Celsius; As long as disk goes to be immersed in positivity developer solution by whole disk during bonding, after ProLIFT100 dissolves completely, semiconductor wafer will be separated automatically with temporary carrier; Whole process can not cause the injuries such as wearing and tearing, contamination to temporary carrier, recycles.
The present invention has following advantage: 1. can tolerate the high temperature more than 300 degrees Celsius; 2. interim bonding transition zone surfacing, makes the consistency of Wafer Thinning very good; 3. go bonding process without the need to applied mechanical power, be not easy fragment; 4. temporary carrier is without any damage, can recycle, cost-saving; 5. the photoresist of extra coating protection disk front description is not needed.
The maximum feature of the present invention is to utilize ProLIFT100 as interim bonding buffer layer material, the high temperature of more than 300 degrees Celsius can be tolerated, compared with traditional interim bonding, can support that semiconductor back surface technique bears higher temperature, break the restriction of original technique to temperature.In addition, the infusion method of mechanical power that what disk of the present invention went bonding technology to adopt is, and traditional outer method such as to draw of trying hard to recommend is carried out disk and is removed Bonded Phase ratio, effectively prevent the damage to disk, decreases fragment rate.
Accompanying drawing explanation
Fig. 1 is semiconductor wafer sample schematic diagram.
Fig. 2 is temporary carrier sample schematic diagram.
Fig. 3 is spin coating ProLIFT100 schematic diagram on semiconductor wafer.
Fig. 4 is spin coating ProLIFT100 schematic diagram on temporary carrier.
The vis-a-vis of semiconductor wafer and temporary carrier is bonded together schematic diagram by Fig. 5.
Embodiment
Technical solution of the present invention is further described below in conjunction with accompanying drawing.
1. prepare sample: by semiconductor wafer and temporary carrier mass concentration be 10% hydrochloric acid (HCl) and washed with de-ionized water clean, and to dry.Temporary carrier can be sheet glass, sapphire sheet etc., as Fig. 1, as shown in Figure 2.
2. on semiconductor wafer, apply ProLIFT100: drip appropriate ProLIFT100 in the front of semiconductor wafer, need the speed with 1000-5000 revolutions per second to carry out spin coating according to different-thickness, spin-coating time was no less than for 60 seconds, as shown in Figure 3.
3. on temporary carrier, apply ProLIFT100: drip appropriate ProLIFT100 in the front of temporary carrier, need the speed with 1000-5000 revolutions per second to carry out spin coating according to different-thickness, spin-coating time was no less than for 60 seconds, as shown in Figure 4.
4. preliminary drying is carried out to ProLIFT100: put into baking oven carry out prebake conditions by coating facing up of the semiconductor wafer of ProLIFT100 and temporary carrier, oven temperature is between 220-250 degree Celsius, and the time should be no less than 30 minutes.
5. bonding: stacked by the vis-a-vis of semiconductor wafer and temporary carrier, utilizes bonder to carry out wafer bonding.Bonding temperature is 250 degrees Celsius, vacuum degree is less than 5mbar, bonding force should be not less than 4000N, bonding time 3 minutes, as shown in Figure 5.
6. back process: can carry out back process step according to normal process flow after bonding completes, can allow most high technology temperature can reach 350 degrees Celsius.
7. disk removes bonding: complete the disk after back process after cleaning, be immersed in positivity developer solution, liquid level all should not have disk, until ProLIFT100 be developed liquid all dissolve after semiconductor wafer automatically will be separated with temporary carrier, by its careful picking-up deionized water rinsing totally.Can use by iterative cycles after temporary carrier cleans up.
Embodiment
1. GaAs (GaAs) disk and sapphire slide glass that complete front technique are placed on hydrochloric acid (HCl) middle rinsing 30 second that concentration is 10%, use washed with de-ionized water again, dry up with nitrogen, finally put and thoroughly dry moisture in an oven, ensure that surface cleaning is dry.
2. at GaAs (GaAs) disk front spin coating ProLIFT100, rotating speed is 2000 revolutions per seconds, and acceleration is 2000 revolutions per seconds, and spin-coating time is 90 seconds, and ProLIFT100 thickness is about 6 μm.
3. spin coating ProLIFT100 in sapphire sheet, rotating speed is 2000 revolutions per seconds, and acceleration is 2000 revolutions per seconds, and spin-coating time is 90 seconds, and ProLIFT100 thickness is about 6 μm.
4. GaAs (GaAs) disk and facing up of sapphire sheet that coat ProLIFT100 are put into the solidification that baking oven carries out ProLIFT100, oven temperature is 250 degrees Celsius, dries 30 minutes sheet time.
5. GaAs (GaAs) disk and sapphire sheet are taken out from baking oven, under room temperature, the rear vis-a-vis of cooling stacks naturally, makes GaAs (GaAs) disk and sapphire sheet as far as possible completely overlapping, neat in edge.Fix with fixture and put into bonder and carry out bonding, bonding temperature is 250 degrees Celsius, and bonding time is 3 minutes, and vacuum degree is 1mbar, and bonding force is 4000N.
6. bonding good after under the support of sapphire sheet, complete the normal back process step such as thinning back side, dorsal pore etching, metallization, the high-temperature technology reaching as high as 350 degrees Celsius can be adopted.
7. back process is clean by whole disk washed with de-ionized water after completing, and dry up with nitrogen, be immersed in positivity developer solution AZ441, the liquid level of developer solution all will not have disk.Until ProLIFT100 be developed liquid all dissolve after GaAs (GaAs) disk will automatically be separated with sapphire sheet, by its careful picking-up deionized water rinsing of GaAs (GaAs) disk totally and dry.
Through above step, just achieve the interim bonding of semiconductor wafer and remove bonding, the disk back process of interim bonding can tolerate the high-temperature technology reaching as high as 350 degrees Celsius in this way.
The part that the present invention does not relate to prior art that maybe can adopt all same as the prior art is realized.
Claims (1)
1. based on photoresist interim bonding and go the method for bonding, it is characterized in that comprising the steps:
gaAs (GaAs) disk and sapphire slide glass that complete front technique being placed on concentration is rinsing 30 second in the hydrochloric acid HCl of 10%, then uses washed with de-ionized water, dries up, be finally placed on baking oven with nitrogen
In thoroughly dry moisture, ensure that surface cleaning is dry;
at GaAs GaAs disk front spin coating ProLIFT100, rotating speed is 2000 revolutions per seconds, acceleration
Be 2000 revolutions per seconds, spin-coating time is 90 seconds, and ProLIFT100 thickness is 6 μm;
spin coating ProLIFT100 in sapphire sheet, rotating speed is 2000 revolutions per seconds, acceleration is 2000 turns/
Second, spin-coating time is 90 seconds, and ProLIFT100 thickness is 6 μm;
the GaAs GaAs disk and facing up of sapphire sheet that coat ProLIFT100 are put into the solidification that baking oven carries out ProLIFT100, and oven temperature is 250 degrees Celsius, dries 30 minutes sheet time;
gaAs GaAs disk and sapphire sheet are taken out from baking oven, under room temperature, the rear vis-a-vis of cooling stacks naturally, makes GaAs GaAs disk and sapphire sheet as far as possible completely overlapping, neat in edge; Fix with fixture and put into bonder and carry out bonding, bonding temperature is 250 degrees Celsius, and bonding time is 3 points
Clock, vacuum degree is 1mbar, and bonding force is 4000N;
under the support of sapphire sheet, thinning back side, dorsal pore etching, metallization is completed normally after bonding is good
Back process step, adopts the high-temperature technology reaching as high as 350 degrees Celsius;
after back process completes, whole disk washed with de-ionized water is clean, dry up with nitrogen, be immersed in positivity developer solution AZ441, the liquid level of developer solution all will not have disk; Until ProLIFT100 be developed liquid all dissolve after GaAs GaAs disk will automatically be separated with sapphire sheet, by its careful picking-up deionized water rinsing of GaAs GaAs disk totally and dry.
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| CN103985664B (en) * | 2014-04-10 | 2016-08-31 | 中国电子科技集团公司第五十五研究所 | Silicon based gallium nitride epitaxial layer peels off the method for transfer |
| CN104157744B (en) * | 2014-07-21 | 2017-07-28 | 中国电子科技集团公司第五十五研究所 | It is a kind of that the method for realizing Buddha's warrior attendant ground mass GaN is shifted based on epitaxial layer |
| CN104465373A (en) * | 2014-10-28 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | Method for making gallium nitride high electron-mobility transistor on silicon slice |
| CN106608615B (en) * | 2015-10-22 | 2019-03-08 | 上海先进半导体制造股份有限公司 | The manufacturing method of MEMS device |
| CN107731668B (en) * | 2017-08-31 | 2018-11-13 | 长江存储科技有限责任公司 | The method that wafer stress is compensated in the hybrid bonded techniques of 3D NAND |
| CN111326467A (en) * | 2019-10-16 | 2020-06-23 | 中国电子科技集团公司第五十五研究所 | Flexible inorganic semiconductor film and preparation method thereof |
| CN110970340B (en) * | 2019-10-31 | 2022-06-10 | 中国电子科技集团公司第五十五研究所 | Flexible InP HBT device and preparation method thereof |
| CN111834279B (en) * | 2020-06-29 | 2021-08-17 | 中国科学院上海微系统与信息技术研究所 | Temporary bonding and debonding method, slide glass structure and application |
| CN113161306B (en) * | 2021-04-15 | 2024-02-13 | 浙江集迈科微电子有限公司 | Efficient heat dissipation structure of chip and preparation process thereof |
| CN115863241B (en) * | 2023-01-17 | 2023-07-25 | 吾拾微电子(苏州)有限公司 | Wafer bonding method and bonding structure |
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| CN1204596C (en) * | 2001-09-26 | 2005-06-01 | 财团法人工业技术研究院 | Local chip connection method |
| CN102214555B (en) * | 2010-04-09 | 2013-02-06 | 中国科学院微电子研究所 | Method for thinning sapphire wafer |
| US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
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