CN103560390A - 800nm ultrashort pulse laser generating and amplifying device with carrier phase stable - Google Patents
800nm ultrashort pulse laser generating and amplifying device with carrier phase stable Download PDFInfo
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- CN103560390A CN103560390A CN201310443401.XA CN201310443401A CN103560390A CN 103560390 A CN103560390 A CN 103560390A CN 201310443401 A CN201310443401 A CN 201310443401A CN 103560390 A CN103560390 A CN 103560390A
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Abstract
The invention relates to an 800nm ultrashort pulse laser generating and amplifying device with carrier phase stable. The 800nm ultrashort pulse laser generating and amplifying device with carrier phase stable comprises a laser device, a first frequency doubling crystal, a second frequency doubling crystal, a first beam splitter, a second beam splitter, a first time delayer, a spectrum widening device, a first parameter amplifier, a second time delayer, a second parameter amplifier, a first high-reflectivity lens and a second high-reflectivity lens. Two wavelengths which participate in parameter action are frequency doubling light (400nm) and 1.5-time fundamental frequency doubling light (533nm) respectively, and 1600nm idling frequency light with carrier phase stable is obtained and undergoes parameter amplifying with a frequency doubling remaining 800nm laser pulse. Finally, the 800nm laser pulse with carrier phase stable is obtained in a frequency doubling mode. The method has the advantages that the obtained laser pulse with carrier phase stable has high SNR and stability; frequency doubling remaining 800nm-wavelength laser energy is effectively utilized and the conversion efficiency of the energy is improved.
Description
Technical field
The present invention relates to laser application, relate in particular to the 800nm ultra-short pulse laser that a kind of carrier phase is stable and produce amplifying device.
Background technology
Ultra-short pulse laser, as having extremely short pulse duration (femtosecond magnitude, 10
-15s), the coherent source of ultra-wide spectrum width (tens nanometers), become the important tool of discipline developments such as promoting physics, chemistry, biology, medical science and material, be widely used at present the fields such as national defence, aviation, communication, medical treatment.
The carrier phase of ultrashort pulse refers to the relative phase between pulse envelope and impulse electric field.For common femto-second laser, even shape has higher repeatability between the pulse of exporting before and after it, its carrier phase is also often not identical, that is to say, change has occurred the electric field form between pulse.This shows as skew or the shake of frequency spectrum in frequency domain.And for the stable laser of carrier phase, between each pulse of its output, not only shape is identical, and impulse electric field form is also identical.With conventional laser pulsion phase ratio, the pulse that carrier phase is stable has higher temporal coherence, better time/spectrum stability.Carrier phase stabilized lasers pulse at present has vital application at the aspects such as generation, light clock and high-accuracy spectroscopy of relevant X ray, chirped pulse.In addition,, due to its high time stability and coherence, at aspects such as materials processing, ultrafast imaging, communication and high accuracy time services, there is potential important application.
Laser carrier phase stabilization technology is divided into two kinds: active feedback formula and passive type.The electronic equipment of active feedback formula utilization precision feeds back the carrier phase offset information between pulse and pulse, and by the dispersion of accurate control chamber, the carrier phase that realizes laser oscillator is stable.The shortcoming of the method is cannot realize single pulse carrier phase to stablize, and between the repeatability of paired pulses and adjacent pulse, the stability of carrier phase offset has higher requirements, and affected by environment larger.Passive type is to obtain in conjunction with optical parameter technology and the spectrum widening technology based on from phase-modulation the pulse that carrier phase is stable.It is stable and without any requirement to light pulse repeatability, affected by environment little that the method can directly realize laser pulse carrier phase single, and long-time stability are good.A kind of typical passive type carrier phase stabilization technique, its method is to 400nm by the first frequency multiplication of 800nm laser pulse, again this frequency doubled light is input to and in medium, carries out spectrum widening, obtain the white light super continuous spectrums of an octave, then using the 800nm wavelength components in white light super continuous spectrums as flashlight, 400nm pulse, as pump light, is carried out difference frequency in parametric amplifier, obtains the stable ideler frequency light of carrier phase.The shortcoming of this method is that spectrum widening is difficult to reach an octave, even if reached, the light intensity of its fundamental component also very a little less than, cause the final stable pulse signal to noise ratio of carrier phase obtaining to be difficult to improve.
Summary of the invention
For spectrum widening in solution passive type carrier phase stabilization technique is difficult to reach the problem of an octave, the invention provides the 800nm ultra-short pulse laser that a kind of carrier phase is stable and produce amplifying device, comprising:
Laser, the first frequency-doubling crystal, the second frequency-doubling crystal, the first beam splitter, the second beam splitter, the first delayer, spectrum widening device, the first parametric amplifier, the second delayer, the second parametric amplifier, the first high reflectivity mirror, the second high reflectivity mirror;
The 800nm laser pulse that described laser produces carries out frequency multiplication as fundamental frequency light through described the first frequency-doubling crystal, and the frequency doubled light of output and remaining fundamental frequency light are through described the first beam splitter separately; Described remaining fundamental frequency light enters described the second parametric amplifier as pump light through described the second delayer after described the second high reflectivity mirror reflection; Described frequency doubled light is divided into through described the second beam splitter the frequency doubled light that two beam energies vary in size; In the frequency doubled light that above-mentioned two beam energies vary in size, the weak a branch of frequency doubled light of energy enters described spectrum widening device through described the first delayer and obtains super continuum source, this super continuum source enters described the first parametric amplifier as flashlight, and a branch of frequency doubled light that energy is stronger enters described the first parametric amplifier as pump light after described the first high reflectivity mirror reflection; Pump light in described the first parametric amplifier is the interaction between component of 3/2nds times of fundamental frequency light with the super continuum source medium frequency as flashlight, and obtaining wavelength is the stable ideler frequency light of carrier phase of twice fundamental frequency light; Described ideler frequency light outputs to described the second parametric amplifier as flashlight and amplifies as flashlight; Carrier phase light stable after above-mentioned amplification carries out frequency multiplication through described the second frequency-doubling crystal, obtains the carrier phase stabilized lasers pulse that fundamental light wave is long.
Further, described the first parametric amplifier and the second parametric amplifier all adopt a class phase matched bbo crystal, in the pump light path of described the first parametric amplifier, are provided with half of wave plate, for changing the polarization direction of pump light.
Further, described laser is ti sapphire laser.
Further, the second order nonlinear crystal that described the first frequency-doubling crystal and the second frequency-doubling crystal are special cutting angle.
Further, described spectrum widening device is third-order non-linear medium, comprising: sapphire, calcirm-fluoride, filling with inert gas hollow-core fiber or photonic crystal fiber.
Further, described the first high reflectivity mirror is the high reflectance width deielectric-coating mirror that is coated with a branch of frequency doubled light that corresponding described energy is stronger, for changing its direction of propagation.
Further, described the second high reflectivity mirror is the high reflectance width deielectric-coating mirror that is coated with corresponding described remaining fundamental frequency light, for changing its direction of propagation.
Further, described the first parametric amplifier and the second parametric amplifier adopt respectively a class and two class phase matched bbo crystals, are provided with half of wave plate, for changing the polarization direction of flashlight in the flashlight path of described the first parametric amplifier.
Compared with prior art, two wavelength that participate in parameter effect are respectively frequency doubled light (400nm wavelength) and 3/2nds times of fundamental frequency light (533nm wavelength), the stable ideler frequency light of 1600nm carrier phase obtaining carries out parameter amplification with the remaining 800nm laser pulse of frequency multiplication again, and last frequency multiplication obtains the pulse of 800nm carrier phase stabilized lasers.The advantage of the method has two: first, the 800nm wavelength components that 533nm wavelength components in super continuum source adopts than prior art is at least eager to excel two more than the order of magnitude, and the stable laser pulse of carrier phase therefore obtaining is compared original method better stability and intensity; The second, effectively utilized the remaining 800nm wavelength laser of frequency multiplication energy, improved energy conversion efficiency.
Accompanying drawing explanation
Fig. 1: the 800nm ultra-short pulse laser that carrier phase provided by the invention is stable produces amplifying device index path;
The half-wave plate that Fig. 2: embodiment 1 provides is arranged at the index path in the first parametric amplifier pump light path;
The half-wave plate that Fig. 3: embodiment 2 provides is arranged at the index path in the first parametric amplifier flashlight path;
Fig. 4: the typical supercontinuum spectrum of a width;
Fig. 5: the laser pulse stack interference pattern obtaining by the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only for explaining the present invention, is not intended to limit the present invention.
As shown in Figure 1, the 800nm ultra-short pulse laser that carrier phase provided by the invention is stable produces amplifying device light path and is described as follows:
1), the 800nm wavelength laser pulse that produces of laser 1 carries out frequency multiplication through the first frequency-doubling crystal 2, the 400nm wavelength frequency doubled light after frequency multiplication and remaining 800nm wavelength fundamental frequency light are through the first beam splitter 3 separately;
2), described remaining 800nm wavelength fundamental frequency light enters the second parametric amplifier 11 as pump light through the second delayer 10 after the second high reflectivity mirror 9 reflections;
3), described 400nm wavelength frequency doubled light is divided into energy approximately than the two bundle frequency doubled lights for 9:1 through the second beam splitter 4;
4), above-mentioned energy approximately than be 9:1 two bundle frequency doubled lights in, the weak a branch of frequency doubled light of energy enters spectrum widening device 6 through the first delayer 5 and obtains super continuum source, this super continuum source enters the first parametric amplifier 7 as flashlight, and a branch of frequency doubled light that energy is stronger enters the first parametric amplifier 7 as pump light after the first high reflectivity mirror 8 reflections;
5) pump light, in the first parametric amplifier 7 interacts with the composition (533nm wavelength) that super continuum source medium frequency as flashlight is 3/2nds times of fundamental frequency light, obtains the stable 1600nm wavelength ideler frequency light of carrier phase;
6), described 1600nm wavelength ideler frequency light outputs to the second parametric amplifier 11 as flashlight and amplifies as flashlight.
7), 1600nm pulse is input in the second frequency-doubling crystal 12 and carries out frequency multiplication after above-mentioned amplification, obtain carrier phase and stablize 800nm laser pulse.
In the first embodiment, the first parametric amplifier 7 and the second parametric amplifier 11 adopt a class phase matched bbo crystal (BBO Crystal), and the cutting angle of the first parametric amplifier 7 is θ=25.8 °, and the cutting angle of the second parametric amplifier 11 is θ=20 °.Now, in the pump light path of the first parametric amplifier 7, add half of wave plate 13 to change the polarization direction of pump light.Particularly, as shown in Figure 2, half-wave plate 13 can be arranged between the first high reflectivity mirror 8 and the first parametric amplifier 7.
When ultrashort pulse is carried out spectrum widening in medium, can regard the four wave mixing of each spectral component in pulse as, suppose the propagation of pulse edge z axle, the new frequency content producing can be write as
E wherein
jelectric field strength, j=1, the electric field of three spectral components of 2,3 indicating impulses, j=4 represents the new frequency content producing.So the phase place of E4 can be write as
By (2) formula, can be found out constant of difference of each frequency content phase place in white light super continuous spectrums.And parameter interaction is a difference frequency process, the phase place of the ideler frequency light of generation is relevant with the difference of pump light and flashlight phase place:
When parametric process occurs between laser pulse and its white light super continuous spectrums, by (2) and (3) formula, can be known, the ideler frequency light carrier phase place of acquisition is a constant, thereby its carrier phase is stable.In addition, should be noted that, in parameter amplification process, the phase place of flashlight can not change.Therefore, this programme can be realized the generation of the carrier phase stable pulse amplifying.
The second order nonlinear crystal that the first frequency-doubling crystal 2 and the second frequency-doubling crystal 12 are special cutting angle.
The first beam splitter 3 is for being coated with high anti-, the high deielectric-coating mirror thoroughly of 400nm wavelength of 800nm wavelength.
The second order nonlinear crystal that the first parametric amplifier 7 is special cutting angle.
The first delayer 5 is placed in the flashlight path of the first parametric amplifier 7, for regulating, enters the flashlight of the first parametric amplifier 7 and synchronizeing of pump light.
The second order nonlinear crystal that the second parametric amplifier 11 is special cutting angle.
The second delayer 10 is placed in the pumping light path of the second parametric amplifier 11, for regulating, enters the flashlight of the second parametric amplifier 11 and synchronizeing of pump light.
The first high reflectivity mirror 8 is for being coated with the high reflectance width deielectric-coating mirror of corresponding 800nm wavelength, for changing the direction of propagation of 800nm wavelength fundamental frequency light.
The second high reflectivity mirror 9 is for being coated with the high reflectance width deielectric-coating mirror of corresponding 400nm wavelength, for changing the direction of propagation of 400nm wavelength frequency doubled light.
The present invention also provides the second embodiment.The difference of the second embodiment and the first embodiment is, the first parametric amplifier 7 and the second parametric amplifier 11 adopt respectively a class and two class phase matched bbo crystals, the cutting angle of the first parametric amplifier 7 is: θ=25.8 °, the cutting angle of the second parametric amplifier 11 is: θ=28.9 °.Now, add half of wave plate 13 to change the polarization direction of flashlight in the flashlight path of the first parametric amplifier 7, particularly, as shown in Figure 3, half-wave plate 13 can be arranged between spectrum widening device 6 and the first parametric amplifier 7.
Phase difference in super continuum source between each frequency content light source is a constant, and the interactional process of parameter is a difference frequency process, when parametric process occurs between laser pulse and super continuum source, the ideler frequency light carrier phase place obtaining is a constant, thereby its carrier phase is stable.In addition, in the process of amplifying at parameter, the phase place of flashlight can not change, and therefore, the present invention can realize the amplification of the laser pulse that carrier phase is stable.
Fig. 3 is the typical supercontinuum spectrum of a width, and pumping condition is for focusing on numerical aperture D=0.015, pump energy E=2 μ J.In figure, can find out, near spectral intensity 533nm is 10
-2magnitude, and the spectral intensity that an octave of long wave end (800nm) is located and noise level approach, visible hardly.As can be seen here, the 800nm composition with in 400nm light and super continuous spectrums described in background technology carries out difference frequency and obtains the method that carrier phase is stablized ideler frequency light, and it realizes many than this programme difficulty of difficulty, and its pulse signal to noise ratio also will be significantly less than this programme.Fig. 4 is the stable laser pulse stack interference pattern of the carrier phase obtaining by the present invention recording by fundamental frequency-frequency multiplication interferometer.This interference pattern is formed by 100 superimposed pulses, and as can be seen from the figure, after a plurality of superimposed pulses, the contrast of interference pattern is still very high, and the carrier phase of this explanation laser pulse is stable.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. the 800nm ultra-short pulse laser that carrier phase is stable produces an amplifying device, it is characterized in that, comprising:
Laser, the first frequency-doubling crystal, the second frequency-doubling crystal, the first beam splitter, the second beam splitter, the first delayer, spectrum widening device, the first parametric amplifier, the second delayer, the second parametric amplifier, the first high reflectivity mirror, the second high reflectivity mirror;
The 80nnm laser pulse that described laser produces carries out frequency multiplication as fundamental frequency light through described the first frequency-doubling crystal, and the frequency doubled light of output and remaining fundamental frequency light are through described the first beam splitter separately; Described remaining fundamental frequency light enters described the second parametric amplifier as pump light through described the second delayer after described the second high reflectivity mirror reflection; Described frequency doubled light is divided into through described the second beam splitter the frequency doubled light that two beam energies vary in size; In the frequency doubled light that above-mentioned two beam energies vary in size, the weak a branch of frequency doubled light of energy enters described spectrum widening device through described the first delayer and obtains super continuum source, this super continuum source enters described the first parametric amplifier as flashlight, and a branch of frequency doubled light that energy is stronger enters described the first parametric amplifier as pump light after described the first high reflectivity mirror reflection; Pump light in described the first parametric amplifier is the interaction between component of 3/2nds times of fundamental frequency light with the super continuum source medium frequency as flashlight, and obtaining wavelength is the stable ideler frequency light of carrier phase of twice fundamental frequency light; Described ideler frequency light outputs to described the second parametric amplifier as flashlight and amplifies as flashlight; Carrier phase light stable after above-mentioned amplification carries out frequency multiplication through described the second frequency-doubling crystal, obtains the carrier phase stabilized lasers pulse that fundamental light wave is long.
2. device as claimed in claim 1, it is characterized in that, described the first parametric amplifier and the second parametric amplifier all adopt a class phase matched bbo crystal, in the pump light path of described the first parametric amplifier, are provided with half of wave plate, for changing the polarization direction of pump light.
3. device as claimed in claim 1, is characterized in that, described laser is ti sapphire laser.
4. device as claimed in claim 1, is characterized in that, the second order nonlinear crystal that described the first frequency-doubling crystal and the second frequency-doubling crystal are special cutting angle.
5. device as claimed in claim 1, is characterized in that, described spectrum widening device is third-order non-linear medium, comprising: sapphire, calcirm-fluoride, filling with inert gas hollow-core fiber or photonic crystal fiber.
6. device as claimed in claim 1, is characterized in that, described the first high reflectivity mirror is the high reflectance width deielectric-coating mirror that is coated with a branch of frequency doubled light that corresponding described energy is stronger, for changing its direction of propagation.
7. device as claimed in claim 1, is characterized in that, described the second high reflectivity mirror is the high reflectance width deielectric-coating mirror that is coated with corresponding described remaining fundamental frequency light, for changing its direction of propagation.
8. device as claimed in claim 1, it is characterized in that, described the first parametric amplifier and the second parametric amplifier adopt respectively a class and two class phase matched bbo crystals, are provided with half of wave plate, for changing the polarization direction of flashlight in the flashlight path of described the first parametric amplifier.
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| KR20070092180A (en) * | 2007-07-23 | 2007-09-12 | 한국과학기술원 | Apparatus for phase stabilization of the stimulated brillouin scattering phase conjugate mirror |
| CN101764346A (en) * | 2010-02-12 | 2010-06-30 | 华东师范大学 | High-power laser pulse carrier envelope phase locking method |
| US20110019267A1 (en) * | 2009-07-24 | 2011-01-27 | Coherent, Inc. | Carrier envelope phase stabilization of an optical amplifier |
| US20120057611A1 (en) * | 2009-05-27 | 2012-03-08 | Kansas State University Research Foundation | Temperature Feedback Control for Long-Term Carrier-Envelope Phase Locking |
| CN102545012A (en) * | 2012-02-24 | 2012-07-04 | 中国科学院上海光学精密机械研究所 | 1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase |
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| KR20070092180A (en) * | 2007-07-23 | 2007-09-12 | 한국과학기술원 | Apparatus for phase stabilization of the stimulated brillouin scattering phase conjugate mirror |
| US20120057611A1 (en) * | 2009-05-27 | 2012-03-08 | Kansas State University Research Foundation | Temperature Feedback Control for Long-Term Carrier-Envelope Phase Locking |
| US20110019267A1 (en) * | 2009-07-24 | 2011-01-27 | Coherent, Inc. | Carrier envelope phase stabilization of an optical amplifier |
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