CN103474033B - Boost control circuit and control method, booster circuit, display device - Google Patents
Boost control circuit and control method, booster circuit, display device Download PDFInfo
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- CN103474033B CN103474033B CN201310346969.XA CN201310346969A CN103474033B CN 103474033 B CN103474033 B CN 103474033B CN 201310346969 A CN201310346969 A CN 201310346969A CN 103474033 B CN103474033 B CN 103474033B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
- H05B41/14—Circuit arrangements
- H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
- H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
- H05B41/288—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices and specially adapted for lamps without preheating electrodes, e.g. for high-intensity discharge lamps, high-pressure mercury or sodium lamps or low-pressure sodium lamps
- H05B41/2885—Static converters especially adapted therefor; Control thereof
- H05B41/2886—Static converters especially adapted therefor; Control thereof comprising a controllable preconditioner, e.g. a booster
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a kind of boost control circuit and control method, booster circuit, display device, by arranging different types of first audion and the second audion in boost control circuit, the base stage of described first audion and the second audion, with the driving voltage output pin of described boost control chip, be connected to primary nodal point；The emitter stage of described first audion and the second audion, and the grid of at least one transistor described, it is connected to secondary nodal point；The colelctor electrode of described first audion connects the first input power；The colelctor electrode of described second audion connects the second input power。Thus the control signal intensity that boost control chip exports can be amplified, strengthen the boost control chip driving force to switch transistor (MOS), to realize the driving to high power switch MOS of boost control chip that in large scale backlight scan drive circuit, driving force is limited, it is ensured that the display quality of liquid crystal panel。
Description
Technical field
The present invention relates to Display Technique field, specifically can relate to boost control circuit and control method thereof that a kind of backlight module for realizing large scale liquid crystal panel drives, and be provided with booster circuit and the display device of this boost control circuit。
Background technology
Along with the development of liquid crystal panel, large scale liquid crystal panel is increasingly becoming the forward position of development。
Owing to the size of liquid crystal panel increases, it is therefore desirable to backlight module arranges more lamp bar as backlight, to realize the normal display brightness of large scale liquid crystal panel。
Due to increasing of lamp bar, it is therefore desirable to higher running voltage drives lamp bar luminous, and these needs arrange pressure switch transistors pipe (MOS) high, high-power for boosting at booster circuit。
In prior art, the control pin direct voltage output signal of boost control chip is to the grid (G pole) of master switch MOS, due to the signal driving force limited (namely electric current is less) that boost control chip directly exports, cause driving high power switch MOS normal operation, thus affecting the display quality of liquid crystal panel。
Summary of the invention
The present invention provides a kind of boost control circuit and control method, booster circuit, display device, thus the boost control chip driving force to switch transistor (MOS) can be strengthened, it is ensured that the display quality of liquid crystal panel。
The present invention provides scheme as follows:
Embodiments providing a kind of boost control circuit, including boost control chip and at least one transistor, described boost control circuit also includes:
For alternately amplifying the control signal intensity of described boost control chip output, and the control signal after amplifying is exported the first audion at least one transistor gate described and the second audion；
The base stage of described first audion and the second audion, is connected with the driving voltage output pin of described boost control chip；
The emitter stage of described first audion and the second audion, is connected with the grid of at least one transistor described；
The colelctor electrode of described first audion connects the first input power；
The colelctor electrode of described second audion connects the second input power。
Preferably, the type of described first audion is NPN type, and the type of described second audion is positive-negative-positive；Or,
The type of described first audion is positive-negative-positive, and the type of described second audion is NPN type。
Preferably, the source electrode of at least one transistor described is connected with the boost module in booster circuit；
The drain electrode of at least one transistor described is connected with described second input power。
Preferably, described boost control circuit includes the first transistor and transistor seconds；
It is provided with resistance between grid and the grid of described transistor seconds of described the first transistor。
Preferably, described first input power is ground with one of described second input power。
The embodiment of the present invention additionally provides a kind of booster circuit control method, including:
When boost control chip exports the first control signal, the first triode ON, the second audion cut-off, after the signal intensity of described first control signal is amplified by the first audion, export the grid at least one transistor；
When boost control chip exports the second control signal, the first audion cut-off, the second triode ON, after the signal intensity of described second control signal is amplified by the second audion, export the grid at least one transistor。
Preferably, described first control signal is different from the current potential of described second control signal。
The embodiment of the present invention additionally provides a kind of booster circuit, and this booster circuit specifically can include the boost control circuit that the invention described above embodiment provides。
Preferably, described booster circuit can also include:
For the voltage of the 3rd input power input carries out the boost module of boosting process, described boost module is connected with the source electrode of at least one transistor described and the outfan of booster circuit；
For realizing the supplementary module of boost control chip normal operation, described supplementary module is connected with the outfan of described boost control chip and booster circuit；
For providing the supply module driving power supply for boost control chip, described supply module is connected with described boost control chip。
The embodiment of the present invention additionally provides a kind of display device, and described display device specifically can include the booster circuit drive circuit as backlight of the invention described above embodiment offer。
Can be seen that from the above, boost control circuit provided by the invention and control method, booster circuit, display device, by being arranged to alternately amplify the control signal intensity of described boost control chip output in boost control circuit, and the described control signal after amplifying is exported the first audion at least one transistor gate described and the second audion；The base stage of described first audion and the second audion is connected with the driving voltage output pin of described boost control chip；The emitter stage of described first audion and the second audion, is connected with the grid of at least one transistor described；The colelctor electrode of described first audion connects the first input power；The colelctor electrode of described second audion connects the second input power。Thus the control signal current intensity that boost control chip exports can be amplified, strengthen the boost control chip driving force to switch transistor (MOS), to realize the driving to high power switch MOS of boost control chip that in large scale backlight scan drive circuit, driving force is limited, it is ensured that the display quality of liquid crystal panel。
Accompanying drawing explanation
The boost control circuit structural representation one that Fig. 1 provides for the embodiment of the present invention；
The boost control circuit structural representation two that Fig. 2 provides for the embodiment of the present invention；
The booster circuit control method schematic flow sheet that Fig. 3 embodiment of the present invention provides；
The boost circuit structure schematic diagram one that Fig. 4 provides for the embodiment of the present invention；
The boost circuit structure schematic diagram two that Fig. 5 provides for the embodiment of the present invention。
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing of the embodiment of the present invention, the technical scheme of the embodiment of the present invention is clearly and completely described。Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments。Based on described embodiments of the invention, the every other embodiment that those of ordinary skill in the art obtain, broadly fall into the scope of protection of the invention。
Unless otherwise defined, technical term used herein or scientific terminology should be and have the ordinary meaning that the personage of general technical ability understands in art of the present invention。" first ", " second " that use in present patent application description and claims and similar word are not offered as any order, quantity or importance, and are used only to distinguish different ingredients。Equally, the similar word such as " " or " " does not indicate that quantity limits yet, and indicates that and there is at least one。" connection " or " being connected " etc., similar word was not limited to physics or machinery connection, but can include electrical connection, no matter was direct or indirectly。" on ", D score, "left", "right" etc. be only used for representing relative position relation, after the absolute position being described object changes, then this relative position relation also correspondingly changes。
Embodiments provide a kind of boost control circuit, as shown in Figure 1, specifically can include boost control chip 1 and at least one transistor etc.。
This boost control circuit specifically can also include:
For alternately amplifying the control signal intensity of boost control chip 1 output, and the control signal after amplifying is exported audion T1 and audion T2 at least one transistor gate described；
Wherein, the base stage of audion T1 and audion T2, it is connected with the driving voltage output pin of boost control chip 1；
The emitter stage of audion T1 and audion T2, is connected with the grid of at least one transistor；
The colelctor electrode of audion T1 connects the first input power；
The colelctor electrode of audion T2 connects the second input power。
The boost control circuit that the embodiment of the present invention provides, utilize audion can realize the function of Current amplifier, the control signal current intensity exported by boost control chip 1 is amplified, strengthen the boost control chip driving force to switch transistor (MOS), to realize the driving to high power switch MOS of boost control chip that in large scale backlight scan drive circuit, driving force is limited, it is ensured that the display quality of liquid crystal panel。
In order to realize alternately amplifying the purpose of the control signal current intensity of boost control chip 1 output, in the embodiment of the present invention, audion T1 and audion T2 can be different types of two kinds of audions, in one embodiment, the type of audion T1 can be NPN type, and the type of audion T2 can be positive-negative-positive；Or, the type of audion T1 can be positive-negative-positive, and the type of audion T2 can be NPN type。
Namely in the embodiment of the present invention, no matter the pin (such as driving DC voltage output pin and DR foot) of boost control chip 1 exports the level (such as high level or low level) of which kind of current potential, in the boost control circuit that the embodiment of the present invention provides, always there is an audion in the conduction state, amplify for the control signal current intensity realizing exporting boost control chip 1, and export the control signal after amplifying to the grid (i.e. G pole) switching MOS, thus switch MOS is driven to be in desired on or off state。
In the embodiment of the present invention, as shown in Figure 2, namely at least one transistor switchs the source electrode of MOS and can be connected with the boost module 2 arranged in the booster circuit involved by the embodiment of the present invention, and the drain electrode of at least one transistor can be connected with the second input power。So, when the first audion T1 or the second audion T2 high electric current exported can make at least one transistor driving conducting state, make the circuit communication between boost module 2 and the second input power, thus dragging down the voltage of boost control circuit output。
In the embodiment of the present invention, described first input power is ground with one of described second input power。In one embodiment, the first input power concretely inputs the power supply of+12V voltage, and the second input power is concretely or the power supply of other input low-voltages。
In an alternate embodiment of the present invention, as shown in Figure 2, in the boost control circuit that the embodiment of the present invention provides, specifically can include transistor T3 and transistor T4, and the grid of transistor T3 and T4 is all connected with the emitter stage of the first audion T1 and the second audion T2。
It addition, in an alternate embodiment of the present invention, in order to ensure the normal operation of booster circuit, be also provided with multiple resistance, to play the effects such as filtering, obstruct。
Concrete, as shown in Figure 2, in the boost control circuit that the embodiment of the present invention provides, specifically can include the resistance R32 being arranged between the grid of transistor T3 and the grid of transistor T4 and other resistance etc. shown in accompanying drawing 2。
The boost control circuit that the embodiment of the present invention provides, can arrange corresponding resistance based on needs。
The embodiment of the present invention additionally provides a kind of booster circuit control method, and as shown in Figure 3, the method specifically may include that
Step 31, when boost control chip exports the first control signal, audion T1 turns on, and audion T2 ends, and after the signal intensity of described first control signal is amplified by audion T1, exports the grid at least one transistor；
Step 32, when boost control chip exports the second control signal, audion T1 ends, and audion T2 turns on, and after the signal intensity of described second control signal is amplified by audion T2, exports the grid at least one transistor。
Preferably, described first control signal is different from the current potential of described second control signal。
In one embodiment, for the boost control circuit shown in accompanying drawing 2, when the DR pin of boost control chip 1 exports control signal, audion T1(is for positive-negative-positive) and audion T2(for NPN type) combination, be in a conducting, a state ended all the time。When DR pin exports high level, audion T1 is in the conduction state, and audion T2 is in cut-off state；When DR pin output low level, audion T1 is in cut-off state, and audion T2 is in the conduction state。Namely transistor T1 and transistor T2 is controlled by two complementary signals respectively。So, during output low and high level, audion T1 and audion T2 alternation, two signals are united two into one again by the common-emitter of audion T1 and audion T2, and then drive master switch MOST3 and T4, reduce power consumption。
No matter again owing to the control signal of boost control chip output is by exporting to switching MOS after audion T1 amplification, or export to switching MOS after being amplified by audion T2, owing to the conducting resistance of audion T1 and audion T2 is all only small, the RC constant making switch MOS is only small, and rate of transformation is quickly。Therefore, the boost control circuit that the embodiment of the present invention provides both had improved the load capacity of boost control circuit, improved again switching speed。
Based on the boost control circuit that the above embodiment of the present invention is passed through, the embodiment of the present invention may be provided for a kind of booster circuit, specifically can include the boost control circuit that the invention described above embodiment provides in this booster circuit。
It addition, as shown in Figure 4, this booster circuit specifically can also include:
For the voltage of the 3rd input power input carries out the boost module 2 of boosting process, described boost module 2 is connected with the source electrode of at least one transistor (namely switching MOS) and the outfan of booster circuit；
For realizing the supplementary module 3 of boost control chip 1 normal operation, described supplementary module 3 is connected with the outfan of boost control chip 1 and booster circuit；
For providing the supply module 4 driving power supply for boost control chip 1, described supply module 4 is connected with boost control chip 1。
One specific embodiment of the booster circuit that the embodiment of the present invention provides can as shown in Figure 5, and resistance, electric capacity involved in this booster circuit can select based on needs。
The specific operation process of the booster circuit provided due to the embodiment of the present invention can be same as the prior art, and therefore, what repeat no more this booster circuit implements process。
In an alternate embodiment of the present invention, based on the boost control circuit that the above embodiment of the present invention provides, the embodiment of the present invention may be provided for a kind of display device, and this display device specifically can include the booster circuit drive circuit as backlight of the invention described above embodiment offer。
Described display device can be: any product with display function or the parts such as liquid crystal panel, LCD TV, liquid crystal display, DPF, mobile phone, panel computer。
Can be seen that from the above, boost control circuit provided by the invention and control method, booster circuit, display device, by being arranged to alternately amplify the control signal intensity of described boost control chip output in boost control circuit, and the described control signal after amplifying is exported the first audion at least one transistor gate described and the second audion；The base stage of described first audion and the second audion, is connected with the driving voltage output pin of described boost control chip；The emitter stage of described first audion and the second audion, is connected with the grid of at least one transistor described；The colelctor electrode of described first audion connects the first input power；The colelctor electrode of described second audion connects the second input power。Thus the control signal current intensity that boost control chip exports can be amplified, strengthen the boost control chip driving force to switch transistor (MOS), to realize the driving to high power switch MOS of boost control chip that in large scale backlight scan drive circuit, driving force is limited, it is ensured that the display quality of liquid crystal panel。
The above is only embodiments of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention。
Claims (9)
1. a boost control circuit, including boost control chip and the first transistor and transistor seconds, it is characterised in that described boost control circuit also includes:
For alternately amplifying the control signal intensity of described boost control chip output, and the control signal after amplifying is exported the first audion to described the first transistor and transistor seconds grid and the second audion；
The base stage of described first audion and the second audion, is connected with the driving voltage output pin of described boost control chip；
The emitter stage of described first audion and the second audion, is connected with the grid of the first transistor and transistor seconds；
The colelctor electrode of described first audion connects the first input power；
The colelctor electrode of described second audion connects the second input power；
It is provided with resistance between grid and the grid of described transistor seconds of described the first transistor。
2. boost control circuit as claimed in claim 1, it is characterised in that the type of described first audion is NPN type, and the type of described second audion is positive-negative-positive；Or,
The type of described first audion is positive-negative-positive, and the type of described second audion is NPN type。
3. boost control circuit as claimed in claim 1, it is characterised in that the source electrode of the first transistor and transistor seconds is connected with the boost module in booster circuit；
The drain electrode of the first transistor and transistor seconds is connected with described second input power。
4. boost control circuit as claimed in claim 1, it is characterised in that described first input power is ground with one of described second input power。
5. a booster circuit control method, it is characterised in that described method is applied in the boost control circuit described in claim 1；
Described method includes:
When boost control chip exports the first control signal, the first triode ON, the second audion cut-off, after the signal intensity of described first control signal is amplified by the first audion, export the grid to the first transistor and transistor seconds；
When boost control chip exports the second control signal, the first audion cut-off, the second triode ON, after the signal intensity of described second control signal is amplified by the second audion, export the grid to the first transistor and transistor seconds。
6. method as claimed in claim 5, it is characterised in that described first control signal is different from the current potential of described second control signal。
7. a booster circuit, it is characterised in that include the boost control circuit as described in any one of Claims 1-4。
8. booster circuit as claimed in claim 7, it is characterised in that also include:
For the voltage of the 3rd input power input carries out the boost module of boosting process, described boost module is connected with the source electrode of the first transistor and transistor seconds and the outfan of booster circuit；
For realizing the supplementary module of boost control chip normal operation, described supplementary module is connected with the outfan of described boost control chip and booster circuit；
For providing the supply module driving power supply for boost control chip, described supply module is connected with described boost control chip。
9. a display device, it is characterised in that described display device includes the drive circuit as backlight of the booster circuit described in described claim 7 or 8。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310346969.XA CN103474033B (en) | 2013-08-09 | 2013-08-09 | Boost control circuit and control method, booster circuit, display device |
| PCT/CN2013/087211 WO2015018140A1 (en) | 2013-08-09 | 2013-11-15 | Boost control circuit and control method thereof, boost circuit and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310346969.XA CN103474033B (en) | 2013-08-09 | 2013-08-09 | Boost control circuit and control method, booster circuit, display device |
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| Publication Number | Publication Date |
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| CN103474033A CN103474033A (en) | 2013-12-25 |
| CN103474033B true CN103474033B (en) | 2016-06-22 |
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| CN201310346969.XA Active CN103474033B (en) | 2013-08-09 | 2013-08-09 | Boost control circuit and control method, booster circuit, display device |
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| WO (1) | WO2015018140A1 (en) |
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| CN106354075B (en) * | 2016-11-25 | 2020-01-21 | 北京意同创科技有限公司 | Remote controller control circuit with backlight screen |
| CN209015702U (en) * | 2018-10-25 | 2019-06-21 | 惠科股份有限公司 | The supply voltage compensation circuit and display device of display panel |
| CN109617544B (en) * | 2018-12-04 | 2023-06-13 | 凌云光技术股份有限公司 | Power-on time sequence control equipment, system and method |
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| CN103354086B (en) * | 2013-08-06 | 2015-09-30 | 深圳市华星光电技术有限公司 | LED backlight and liquid crystal display |
-
2013
- 2013-08-09 CN CN201310346969.XA patent/CN103474033B/en active Active
- 2013-11-15 WO PCT/CN2013/087211 patent/WO2015018140A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201655252U (en) * | 2010-02-25 | 2010-11-24 | 青岛海信电器股份有限公司 | LED phase shift circuit, display device and large screen LED |
| CN201904072U (en) * | 2010-12-01 | 2011-07-20 | 福建捷联电子有限公司 | LED backlight circuit driven and controlled by Scaler chip in display |
| CN202189537U (en) * | 2011-06-16 | 2012-04-11 | 深圳市华星光电技术有限公司 | Boost circuit used for LED backlight drive circuit |
| CN102290030A (en) * | 2011-07-01 | 2011-12-21 | 深圳市华星光电技术有限公司 | LED (Light-Emitting Diode) backlight driving circuit |
| CN103166458A (en) * | 2013-02-06 | 2013-06-19 | 京东方科技集团股份有限公司 | Boosted circuit, backlight driver circuit and backlight module |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015018140A1 (en) | 2015-02-12 |
| CN103474033A (en) | 2013-12-25 |
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