CN103458618A - Method for forming circuit with laser irradiation - Google Patents
Method for forming circuit with laser irradiation Download PDFInfo
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- CN103458618A CN103458618A CN2012101779095A CN201210177909A CN103458618A CN 103458618 A CN103458618 A CN 103458618A CN 2012101779095 A CN2012101779095 A CN 2012101779095A CN 201210177909 A CN201210177909 A CN 201210177909A CN 103458618 A CN103458618 A CN 103458618A
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- sensitive material
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- laser
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Abstract
Provided is a method for forming a circuit with laser irradiation. A light-sensitive material coats a substrate to form a light-sensitive material layer, laser exposure is carried out on the light-sensitive material layer in a patterning mode, the substrate with an exposure field and an underexposure filed is placed in nanometer electric conduction metal solutions, nanometer metal particles are absorbed on the light-sensitive material of the exposure field through the long straight molecular structure of the light-sensitive material of the exposure field, a metal circuit layer is formed on the light-sensitive material, the laser irradiation mode is utilized, the advantages of high power, high density, high directivity and monochromaticity of laser light are used, and therefore the quality of products can be effectively controlled. In addition, the metal particles are absorbed through the light-sensitive material exposed in the patterning mode, the metal circuit layer is formed, waste liquid is effectively reduced, and the current environmental protection concepts are met better.
Description
Technical field
The present invention relates to a kind of method that laser irradiation forms circuit, especially with laser, photosensitive material layer is carried out to patterned exposure, the light-sensitive material after exposure can adsorb nano metal particles and form the metallic circuit layer.
Background technology
Prior art forms the printing process of circuit on substrate, can be divided into relief method and addition process, relief method is to utilize micro-shadow technology or shielding mode, metal film etching on base material is removed, and form circuit, further need to divest photoresist, due to needs plating, chemical etching, chemical stripping, cleaning etc., be accompanied by the generation of a large amount of chemical waste fluids, when these chemical waste fluids do not have suitable processing and discharge, can produce serious pollution for environment.Addition process is on substrate, part at pre-formed circuit is directly carried out the deposition of copper or other metal, such as evaporation, sputter or chemical gas deposition etc., yet the cost of board is higher, process conditions and environmental requirement are comparatively strict, space that board is shared is larger, therefore cost is higher, and the state of board obviously affects the quality of product, and need tight management and control.
Summary of the invention
Main purpose of the present invention is to provide a kind of method of utilizing the laser irradiation to form circuit, the method comprises the light-sensitive material application step, laser step of exposure and metallic circuit form step, in the light-sensitive material application step, one light-sensitive material is coated on substrate, and form a photosensitive material layer, the laser step of exposure is that the substrate that will have photosensitive material layer is arranged in the laser exposure machine, carry out the laser exposure for photosensitive material layer in the mode of patterning, light-sensitive material used in the present invention is TDB01 (containing thiophenol azobenzene derivative), and corresponding laser light wavelength is the section at ultraviolet light, be subject to making the TDB01 molecular structure of exposure area to be subject to changing into the straight shape structure of length of trans-isomerism thing, and the TDB01 molecule of unexposed area maintains cis-isomer, it is the bending structure.
Metallic circuit forms step, the substrate that will have exposure area and unexposed area is put in the conductive nano metallic solution, this conductive nano metallic solution comprises a plurality of nano metal particles, the light-sensitive material of exposure area easily makes nano metal particles be adsorbed on the light-sensitive material of exposure area due to the trans-isomerism thing structure of its long straight shape, and forms the metallic circuit layer on light-sensitive material.
Characteristics of the present invention are to carry out patterned exposure by the mode with the laser irradiation for light-sensitive material, the light-sensitive material adsorbing metal particles after making to expose, and form the metallic circuit layer.By the advantage of laser light high power, high density, high directivity and monochromaticjty, thereby can effectively control the quality of product.In addition, the light-sensitive material adsorbing metal particles with the long straight shape molecular structure of rear formation that exposes, effectively reduce a large amount of waste liquids that produce on prior art, and more meet environmental protection concept now.
The accompanying drawing explanation
Fig. 1 is that the present invention utilizes the laser irradiation to form the flow chart of the method for circuit;
Fig. 2 A～Fig. 2 D is that the present invention utilizes the laser irradiation to form the structural representation of the method for circuit.
The primary clustering symbol description
10 substrates
20 photosensitive material layer
31 exposure areas
33 unexposed areas
40 conductive nano metallic solutions
45 nano metal particles
50 metallic circuit layers
S1 laser irradiation forms the method for circuit
S11 light-sensitive material application step
S13 laser step of exposure
The S15 metallic circuit forms step
Embodiment
Those of ordinary skill in the art below coordinate graphic and element numbers to do more detailed description to embodiments of the present invention, so that can implement according to this after studying this specification carefully.
With reference to figs. 1 and 2a to Fig. 2 D, be respectively the flow chart that the present invention utilizes the method for laser irradiation formation circuit, and the present invention utilizes the laser irradiation to form the structural representation of the method for circuit.As shown in Figure 1, the method S1 that the present invention utilizes the laser irradiation to form circuit comprises light-sensitive material application step S11, laser step of exposure S13 and metallic circuit form step S15, in light-sensitive material application step S11, as shown in Figure 2 A, one light-sensitive material is coated on substrate 10, and form a photosensitive material layer 20, laser step of exposure S13 is that the substrate 10 that will have photosensitive material layer 20 is arranged in the laser exposure machine, carry out the laser exposure for photosensitive material layer 20 in the mode of patterning, again after patterned exposure, photosensitive material layer 20 changes the exposure area 31 and unexposed area 33 as shown in Fig. 2 B into, the light-sensitive material molecular structure of exposure area 31 is subject to changing into the structure of long straight shape, and the light-sensitive material molecular structure of unexposed area 33 is bending.
Metallic circuit forms step S15 as shown in Fig. 2 C and Fig. 2 D, the substrate 10 that will have exposure area 31 and unexposed area 33 is put in a conductive nano metallic solution 40, this conductive nano metallic solution 40 comprises a plurality of nano metal particles 45, the light-sensitive material of exposure area 31 easily adsorbs nano metal particles 45 due to the structure of its long straight shape, make substrate 10 is taken out through after the steps such as cleaning, drying, nano metal particles 45 is adsorbed on the light-sensitive material of exposure area 31, and forms metallic circuit layer 50 on light-sensitive material.
Light-sensitive material used in the present invention can at least comprise TDB01 (containing thiophenol azobenzene derivative), and the laser wave-length coverage of using is the wave-length coverage at ultraviolet light.
Characteristics of the present invention are to carry out patterned exposure by the mode of utilizing the laser irradiation for light-sensitive material, and the light-sensitive material after making to expose is easy to adsorbing metal particles with the molecular structure of long straight shape, and forms the metallic circuit layer.By the advantage of laser light high power, high density, high directivity and monochromaticjty, thereby can effectively control the quality of product.In addition, the light-sensitive material adsorbing metal particles with the long straight shape molecular structure of rear formation that exposes, effectively reduce a large amount of waste liquids that produce on prior art, and more meet environmental protection concept now.
The foregoing is only to explain preferred embodiment of the present invention, not attempt is done any pro forma restriction to the present invention according to this.Therefore, all have do relevant any modification of the present invention or change under identical spirit, all must be included in the category that the invention is intended to protection.
Claims (6)
1. a method of utilizing the laser irradiation to form circuit, is characterized in that, the method comprises:
One light-sensitive material application step, coat a light-sensitive material on one substrate, and form a photosensitive material layer;
One laser step of exposure, be arranged at this substrate of this light-sensitive material of coating in one laser exposure machine, carries out the laser exposure for this photosensitive material layer in a patterning mode, and make this photosensitive material layer form an exposure area and a unexposed area; And
One metallic circuit forms step, and this substrate that will have this exposure area and this unexposed area is put in the conductive nano metallic solution with a plurality of nano metal particles, described nano particle is adsorbed on this exposure area, and forms a metallic circuit.
2. the method for claim 1, is characterized in that, this light-sensitive material at least comprises TDB01.
3. method as claimed in claim 2, is characterized in that, the laser wavelength that this light-sensitive material is corresponding is in ultraviolet light range.
4. the method for claim 1, is characterized in that, this exposure area has the molecular structure of a long straight shape.
5. the method for claim 1, is characterized in that, this unexposed area has a forniciform molecular structure.
6. the method for claim 1, is characterized in that, this metallic circuit forms in step and further comprises a cleaning step and a baking step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101779095A CN103458618A (en) | 2012-06-01 | 2012-06-01 | Method for forming circuit with laser irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101779095A CN103458618A (en) | 2012-06-01 | 2012-06-01 | Method for forming circuit with laser irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103458618A true CN103458618A (en) | 2013-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101779095A Pending CN103458618A (en) | 2012-06-01 | 2012-06-01 | Method for forming circuit with laser irradiation |
Country Status (1)
| Country | Link |
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| CN (1) | CN103458618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024547A1 (en) * | 2017-08-02 | 2019-02-07 | 京东方科技集团股份有限公司 | Positive photoresist composition, via hole formation method, display substrate, and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070151099A1 (en) * | 2003-12-19 | 2007-07-05 | Loucas Tsakalakos | Direct integration of inorganic nanowires with micron-sized electrodes |
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
| TW201209523A (en) * | 2010-08-31 | 2012-03-01 | Cretec Co Ltd | Method of using laser irradiation to form a circuit |
-
2012
- 2012-06-01 CN CN2012101779095A patent/CN103458618A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070151099A1 (en) * | 2003-12-19 | 2007-07-05 | Loucas Tsakalakos | Direct integration of inorganic nanowires with micron-sized electrodes |
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
| TW201209523A (en) * | 2010-08-31 | 2012-03-01 | Cretec Co Ltd | Method of using laser irradiation to form a circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024547A1 (en) * | 2017-08-02 | 2019-02-07 | 京东方科技集团股份有限公司 | Positive photoresist composition, via hole formation method, display substrate, and display device |
| US11526077B2 (en) | 2017-08-02 | 2022-12-13 | Beijing Boe Technology Development Co., Ltd. | Positive photoresist composition, via-forming method, display substrate and display device |
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Application publication date: 20131218 |