CN103427775A - Differential amplifier circuit - Google Patents
Differential amplifier circuit Download PDFInfo
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- CN103427775A CN103427775A CN2013103846099A CN201310384609A CN103427775A CN 103427775 A CN103427775 A CN 103427775A CN 2013103846099 A CN2013103846099 A CN 2013103846099A CN 201310384609 A CN201310384609 A CN 201310384609A CN 103427775 A CN103427775 A CN 103427775A
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- effect transistor
- field effect
- inductance
- resistance
- differential amplifier
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Abstract
The invention discloses a differential amplifier circuit, which comprises field-effect tubes, a diode, inductors, resistors and capacitors. Emitters of the two tubes are connected together by adopting an emitter coupling method to facilitate direct signal transmission. Through devices such as the capacitors and the inductors, the stability of the circuit is increased and the circuit has a stable direct-current offsetting capacity and a very strong common-mode signal suppression capacity. Moreover, the structure of the circuit is simple, the parameters of the devices are simple to calculate and the circuit is easy to manufacture.
Description
Technical field
The present invention relates to a kind of amplifying circuit, particularly a kind of differential amplifier circuit.
Background technology
Differential amplifier circuit is the important composition unit of analog integrated circuit; particularly as the input stage of integrated transporting discharging; it can amplify direct current signal; can amplify AC signal again; especially in power management class chip, be widely used in the various simulations such as oscillator, phase-locked loop and data converter and hybrid digital-analog integrated circuit.But it is loaded down with trivial details that its component parameters calculates, the circuit debugging difficulty, and the appearance value of the resistance of resistance and capacitor do excessive, make the circuit that cut-off frequency is low be difficult to make.
Therefore need a kind of new technical scheme to solve the problems referred to above.
Summary of the invention
Goal of the invention: the problem and shortage existed for above-mentioned prior art, the purpose of this invention is to provide a kind of differential amplifier circuit, difference mode signal is had to very strong amplifying power.
Technical scheme: the technical solution used in the present invention is a kind of differential amplifier circuit, this circuit comprises field effect transistor, diode, inductance, resistance and electric capacity, the grid of the first field effect transistor is voltage input end, its drain electrode is by the parallel connection access positive voltage of the first resistance and the first electric capacity, the source electrode of the first field effect transistor is connected with an end of the first inductance, the other end of the first inductance is connected with an end of the second inductance, the other end of the second inductance is connected with the drain electrode of the second field effect transistor, the source electrode of the second field effect transistor is by the parallel connection access positive voltage of the second resistance and the 3rd electric capacity, the grid of the second field effect transistor is connected with the positive pole of diode, the negative pole of diode is as voltage output end, the drain electrode of the 3rd field effect transistor is connected with the other end of the first inductance, the source electrode of the 3rd field effect transistor is by the parallel connection access negative voltage of the 4th resistance and the second electric capacity, the grid of the 3rd field effect transistor is connected with negative voltage.
Preferably, an end of the 3rd resistance is connected with the source electrode of the second field effect transistor, its other end ground connection.
Preferably, the first field effect transistor and the second field effect transistor are the P-channel enhancement type field effect transistor.
Preferably, the 3rd field effect transistor is N channel junction field-effect pipe.
Beneficial effect: the present invention compared with prior art, its advantage is that the present invention is by penetrating grade coupled mode, two pipes are penetrated to level to link together, be convenient to direct transmission of signal, it has the ability of stable direct current biasing and very strong inhibition common-mode signal, and circuit structure is simple, component parameters calculates simple, is easy to make.
The accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention.
Embodiment
As shown in Figure 1, the present invention includes field effect transistor, diode, inductance, resistance and electric capacity, the grid of the first field effect transistor Q1 is voltage input end Ui, its drain electrode is by the parallel connection access positive voltage VCC of the first resistance R 1 and the first capacitor C 1, the source electrode of the first field effect transistor Q1 is connected with an end of the first inductance L 1, the other end of the first inductance L 1 is connected with an end of the second inductance L 2, the other end of the second inductance L 2 is connected with the drain electrode of the second field effect transistor Q2, the source electrode of the second field effect transistor Q2 is by the parallel connection access positive voltage VCC of the second resistance R 2 and the 3rd electric capacity R3, the grid of the second field effect transistor Q2 is connected with the positive pole of diode D1, the negative pole of diode (D1) is as voltage output end Uo, the drain electrode of the 3rd field effect transistor Q3 is connected with the other end of the first inductance L 1, the source electrode of the 3rd field effect transistor Q3 is by the parallel connection access negative voltage VSS of the 4th resistance R 4 and the second capacitor C 2, the grid of the 3rd field effect transistor Q3 is connected with negative voltage VSS, one end of the 3rd resistance R 3 is connected with the source electrode of the second field effect transistor Q2, its other end ground connection.
The first field effect transistor Q1 and the second field effect transistor Q2 are the P-channel enhancement type field effect transistor; The 3rd field effect transistor Q3 is N channel junction field-effect pipe.
The present invention is by penetrating grade coupled mode, two pipes are penetrated to level to link together, be convenient to direct transmission of signal, and by former devices such as electric capacity and inductance, increase the stability of this circuit, it has the ability of stable direct current biasing and very strong inhibition common-mode signal, and circuit structure is simple, component parameters calculates simple, is easy to make.
Claims (4)
1. a differential amplifier circuit, it is characterized in that: this circuit comprises field effect transistor, diode, inductance, resistance and electric capacity, the grid of described the first field effect transistor (Q1) is voltage input end (Ui), its drain electrode is by the parallel connection access positive voltage (VCC) of the first resistance (R1) and the first electric capacity (C1), the source electrode of the first field effect transistor (Q1) is connected with an end of the first inductance (L1), the other end of described the first inductance (L1) is connected with an end of the second inductance (L2), the other end of described the second inductance (L2) is connected with the drain electrode of the second field effect transistor (Q2), the source electrode of described the second field effect transistor (Q2) is by the parallel connection access positive voltage (VCC) of the second resistance (R2) and the 3rd electric capacity (R3), the grid of the second field effect transistor (Q2) is connected with the positive pole of diode (D1), the negative pole of described diode (D1) is as voltage output end (Uo), the drain electrode of described the 3rd field effect transistor (Q3) is connected with the other end of the first inductance (L1), the source electrode of the 3rd field effect transistor (Q3) is by the parallel connection access negative voltage (VSS) of the 4th resistance (R4) and the second electric capacity (C2), the grid of the 3rd field effect transistor (Q3) is connected with negative voltage (VSS).
2. a kind of differential amplifier circuit according to claim 1, it is characterized in that: an end of described the 3rd resistance (R3) is connected with the source electrode of the second field effect transistor (Q2), its other end ground connection.
3. a kind of differential amplifier circuit according to claim 1, it is characterized in that: described the first field effect transistor (Q1) and the second field effect transistor (Q2) are the P-channel enhancement type field effect transistor.
4. a kind of differential amplifier circuit according to claim 1 is characterized in that: described the 3rd field effect transistor (Q3) is N channel junction field-effect pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103846099A CN103427775A (en) | 2013-08-30 | 2013-08-30 | Differential amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103846099A CN103427775A (en) | 2013-08-30 | 2013-08-30 | Differential amplifier circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103427775A true CN103427775A (en) | 2013-12-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103846099A Pending CN103427775A (en) | 2013-08-30 | 2013-08-30 | Differential amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103427775A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416586A (en) * | 2020-04-03 | 2020-07-14 | 杭州易百德微电子有限公司 | Load structure and radio frequency amplifier formed by same |
| CN112564651A (en) * | 2020-12-30 | 2021-03-26 | 山东建筑大学 | Differential experiment circuit composed of MOS (metal oxide semiconductor) tubes |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4628272A (en) * | 1984-10-01 | 1986-12-09 | Motorola, Inc. | Tuned inductorless active phase shift demodulator |
| CN86108386A (en) * | 1986-12-13 | 1988-07-06 | 航空工业部六○七研究所 | Low phase shift amplitude limiter |
| CN1086357A (en) * | 1992-08-26 | 1994-05-04 | 菲利浦电子有限公司 | Transformer circuit, double balanced mixer |
| US5550441A (en) * | 1994-03-24 | 1996-08-27 | Thomson Consumer Electronics Inc. | Parabolic correction signal amplitude control loop |
| US5602508A (en) * | 1994-09-19 | 1997-02-11 | Alps Electric Co., Ltd. | Grounded-base transistor amplifier |
-
2013
- 2013-08-30 CN CN2013103846099A patent/CN103427775A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4628272A (en) * | 1984-10-01 | 1986-12-09 | Motorola, Inc. | Tuned inductorless active phase shift demodulator |
| CN86108386A (en) * | 1986-12-13 | 1988-07-06 | 航空工业部六○七研究所 | Low phase shift amplitude limiter |
| CN1086357A (en) * | 1992-08-26 | 1994-05-04 | 菲利浦电子有限公司 | Transformer circuit, double balanced mixer |
| US5550441A (en) * | 1994-03-24 | 1996-08-27 | Thomson Consumer Electronics Inc. | Parabolic correction signal amplitude control loop |
| US5602508A (en) * | 1994-09-19 | 1997-02-11 | Alps Electric Co., Ltd. | Grounded-base transistor amplifier |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416586A (en) * | 2020-04-03 | 2020-07-14 | 杭州易百德微电子有限公司 | Load structure and radio frequency amplifier formed by same |
| CN112564651A (en) * | 2020-12-30 | 2021-03-26 | 山东建筑大学 | Differential experiment circuit composed of MOS (metal oxide semiconductor) tubes |
| CN112564651B (en) * | 2020-12-30 | 2021-11-02 | 山东建筑大学 | Differential experiment circuit composed of MOS (metal oxide semiconductor) tubes |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131204 |