CN103401141B - A kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser - Google Patents
A kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser Download PDFInfo
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- CN103401141B CN103401141B CN201310338100.0A CN201310338100A CN103401141B CN 103401141 B CN103401141 B CN 103401141B CN 201310338100 A CN201310338100 A CN 201310338100A CN 103401141 B CN103401141 B CN 103401141B
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Abstract
The invention discloses a kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser.The present invention utilizes semiconductor laser to have the characteristic of maximum modulation efficiency at relaxation oscillation frequency place, achieve the function of electro-optic conversion and photon microwave filtering, without the need to extra electrooptic modulator and arrowband electrical filter with a distributed feedback type semiconductor laser simultaneously.By to tuning to laser relaxation oscillation frequency of the tuning realization of laser bias current and working temperature, final realize tuning to the wide range of frequencies of optical-electronic oscillator.
Description
Technical field
The present invention relates to optical-electronic oscillator technical field, particularly the tunable optical-electronic oscillator of a kind of wideband frequency based on directly modulation distributed feedback type semiconductor laser.
Background technology
In the application such as satellite communication, radar system, precision instrumentation and high-acruracy survey, usually need the microwave signal of high signal quality, frequency-adjustable.So-called signal quality mainly refers to the short-term frequency stability of microwave signal, i.e. phase noise, and long-time stability, i.e. frequency drift.Traditional high-quality microwave signal source generally employing sound energy-storage travelling wave tube (such as quartz crystal) or microwave energy-storage element (such as dielectric cavity) forms resonant cavity.But these energy-storage travelling wave tubes only have the resonance point of several high q-factor in low-frequency range, obtain high-frequency microwave signal needs to be produced by the method for frequency multiplication, but frequency multiplication can bring signal to make an uproar mutually the remarkable decline of performance.Within 1996, X.SteveYao and LuteMaleki proposes optical-electronic oscillator first.Optical-electronic oscillator utilizes the photoelectricity resonant cavity of high q-factor to store the energy of microwave, can produce high spectral purity, the microwave of low phase noise, millimeter-wave signal, and phase noise characteristic and frequency has nothing to do, can not decline along with the raising of frequency.Therefore, compared with traditional microwave oscillator, optical-electronic oscillator has more advantage needing the field of low noise high-frequency signal source.
The optical-electronic oscillator of traditional structure is generally made up of a lasing light emitter and an electro-optical feedback loop, and electro-optical feedback loop comprises electrooptic modulator, long-distance optical fiber, high-speed photodetector, microwave amplifier, arrowband microwave filter, the opto-electronic devices such as micro-wave coupler.Fiber lengths is longer, and the energy storage time in electro-optical feedback loop is longer, and the phase noise of signal will be less, and meanwhile, the mode spacing of optical-electronic oscillator can reduce, and therefore needs the microwave filter of high q-factor to ensure the single-mode oscillation of optical-electronic oscillator.In addition, frequency tunability is a key property of microwave signal source, but due to the adjustable microwave filter in very difficult production high q-factor broadband, the optical-electronic oscillator of traditional structure only has the frequency tuning range of tens to hundreds of MHz.In addition, high-speed electro-optic modulator and high q-factor microwave filter expensive, from application angle cost have to be reduced.
Therefore, the technical problem solved in the urgent need to this area researcher is at present exactly: the optical-electronic oscillator that how innovatively can propose a kind of economical and practical, compact conformation, to solve the deficiencies in the prior art, and effectively can meet the wideband adjustable of optical-electronic oscillator simultaneously.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser, in order to realize economical and practical, compact conformation and the wideband adjustable of optical-electronic oscillator.
Technical scheme: a kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser of the present invention is the simple optoelectronic oscillation ring of structure not comprising electrooptic modulator and electrical filter based on, and this optoelectronic oscillation ring comprises distributed feedback type semiconductor laser, monomode fiber, 10:90 optical branching device, optical-electrical converter, low noise wideband microwave amplifier, 10:90 electric shunt, electric adjustable attenuator; Wherein, distributed feedback type semiconductor laser, monomode fiber, 10:90 optical branching device, optical-electrical converter are connected in turn by optical fiber; Optical-electrical converter, low noise wideband microwave amplifier, 10:90 electric shunt, electric adjustable attenuator, distributed feedback type semiconductor laser are connected in turn by microwave coaxial line; By regulating bias current and the working temperature of distributed feedback type semiconductor laser, at the tunable high-quality microwave signal of 90% end generation wideband frequency of 10:90 electric shunt.
Described distributed feedback type semiconductor laser is the single-mode laser of the band internal insulation device of general commercial.
Described monomode fiber is G.652 standard single-mode fiber.
The optical coupler that described 10:90 optical branching device is made up of an input port and port 1. with two output ports; Wherein 2. first output port and port export the energy of 10%, and 3. second output port and port export the energy of 90%.
The electric coupling that 6. 5. described 10:90 electric shunt be made up of with port an input port and port 4. with two output ports and port; Its middle port 5 exports the energy of 10%, and port 6 exports the energy of 90%.
Described electric adjustable attenuator attenuation should be greater than 20dB.
Beneficial effect: as can be seen from technique scheme, compared with prior art, the present invention has following beneficial effect:
1, the optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention, semiconductor laser is utilized to have the characteristic of maximum modulation efficiency at relaxation oscillation frequency place, achieve the function of electro-optic conversion and photon microwave filtering with a distributed feedback type semiconductor laser simultaneously, without the need to extra electrooptic modulator and high q-factor microwave filter, structure is simple, economical and practical.
2, the optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention, by to tuning to laser relaxation oscillation frequency of the tuning realization of laser bias current and working temperature, the wide range of frequencies of final realization to optical-electronic oscillator is tuning, and tuning manner is simple and convenient, be easy to realize.
3, the optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention, can carry out the tuning of microwave frequency in very wide scope, tuning range is only limited to the design parameter of distributed feedback type semiconductor laser and the bandwidth of package level, optical-electrical converter and low noise wideband microwave amplifier.
4, the optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention, owing to make use of the microwave energy-storage element of monomode fiber as high q-factor, the microwave signal that this optical-electronic oscillator exports has splendid phase noise characteristic.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, below in conjunction with accompanying drawing, the invention will be further described, wherein:
Fig. 1 is the structural representation of a kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention.
Fig. 2 is the light signal spectrum shape that when frequency of oscillation is 8.752GHz in example 1, optical-electronic oscillator exports.
Fig. 3 is the tuning range produced in example 1 is the microwave signal of 2.659 ~ 8.752GHz.
Fig. 4 is the frequency produced in example 1 is the phase noise curve chart of the microwave signal of 8.752GHz.
Embodiment
For achieving the above object, the invention discloses a kind of optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser, described optical-electronic oscillator comprises:
Distributed feedback type semiconductor laser, be used for realizing electro-optic conversion on the one hand, vibrate in photoelectricity storage chamber after the frequency of oscillation of optical-electronic oscillator is converted to light signal, the characteristic equivalence utilizing semiconductor laser to have maximum modulation efficiency at relaxation oscillation frequency place on the other hand realizes photon filtering;
Monomode fiber, is used as high q-factor microwave energy-storage element, length be several meters to thousands of rice not etc.;
Optical branching device, export for the light signal carrying frequency of oscillation is chosen a part of light signal as oscillator according to preset need, remainder is transferred to optical-electrical converter and is converted to the signal of telecommunication;
Optical-electrical converter, for converting the light signal carrying ring cavity frequency of oscillation to the signal of telecommunication, and by the electric signal transmission after conversion to microwave amplifier;
Low noise wideband microwave amplifier, for amplifying the microwave signal after photodetector conversion, makes optical-electronic oscillator system gain be greater than oscillation threshold;
Electric shunt, for receiving the signal of telecommunication that microwave amplifier amplifies, and choose the electric signal transmission of a part of microwave energy as oscillator according to preset need, remainder is transferred to electric adjustable attenuator;
Electricity adjustable attenuator, for controlling ring cavity gain, makes distributed feedback type semiconductor laser be operated in small signal modulation state.
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the structural representation of the optical-electronic oscillator based on directly modulation distributed feedback type semiconductor laser provided by the invention.As shown in Figure 1, the laser that distributed feedback type semiconductor laser 1 sends is divided into two-way by a 10:90 optical branching device 3 after a section single-mould fiber 2 transmits, optical spectrum analyzer 9 is received for monitoring the spectral signal of oscillator output in one tunnel (port 2.) of 10%, 90% Na mono-tunnel (port 3.) enters an optical-electrical converter 4, export the signal of telecommunication and be divided into two-way by a 90:10 electric shunt 6 after a low noise wideband microwave amplifier 5 amplifies, electric spectrum analyzer 8 is received for analyzing the signal of telecommunication of oscillator output in one tunnel (port 6.) of 90%, the radio frequency mouth that distributed feedback type semiconductor laser 1 is received on 10% Na mono-tunnel (port 5.) after an electric adjustable attenuator decay makes loop close.Port 2. with the output that 6. port is light signal of the present invention and oscillating microwave signal respectively.
[embodiment 1], with reference to Fig. 1, select the parameter of main devices used as follows: distributed feedback type semiconductor laser 1, three dB bandwidth is 10GHz; Monomode fiber 2, long is 2.77Km; Optical-electrical converter 4, three dB bandwidth is 10GHz, and responsiveness is 0.9A/W; Low noise amplifier 5, low level signal amplification pattern, working frequency range is 1 ~ 18GHz, and gain is 35dB; Adjustable attenuator 7, attenuation is continuously adjustabe between 0 ~ 30dB.Wherein said distributed feedback type semiconductor laser 1 is the single-mode laser of the band internal insulation device of general commercial.Described monomode fiber 2 is G.652 standard single-mode fibers.Described optical-electrical converter 4 is that band is outside across hindering the photo-detector put.Experimental result respectively as shown in Figure 2, Figure 3, Figure 4.Can see that experiment creates the microwave signal of 2.659 ~ 8.752GHz wideband adjustable, and the phase noise of the microwave signal produced at 10kHz frequency deviation place is all lower than-104dB/Hz.
Operation principle of the present invention is as follows: initial, and the noise that low noise wideband microwave amplifier 5 exports is loaded into the electrical input of distributed feedback type semiconductor laser 1 after electric shunt 6 and electric adjustable attenuator 7.Therefore distributed feedback type semiconductor laser 1 swash the noise that the light penetrated exported by low noise wideband microwave amplifier 5 modulate, signal after modulation again enters low noise wideband microwave amplifier 5 after monomode fiber 2, optical branching device 3 and optical-electrical converter 4, forms photoelectricity positive feedback.Because carry out directly modulation to distributed feedback type semiconductor laser 1 achieved electro-optic conversion in loop, so without the need to additionally using expensive photoelectric external modulator.In addition, because monomode fiber 2 is as the low-loss of microwave delay line, truetimedelay characteristic, there is the equally spaced high q-factor oscillation mode of a series of frequency in above-mentioned electro-optical feedback loop, the phase noise characteristic of each pattern is splendid.Meanwhile, because distributed feedback type semiconductor laser 1 has maximum modulation efficiency at relaxation oscillation frequency place, so the noise corresponding to relaxation oscillation frequency place in ring cavity initial noisc will obtain maximum feedback gain, after ring cavity circulation vibration, energy will concentrate on this frequency place, namely this frequency will become main mould, thus also can realize single-mode oscillation without the need to high q-factor microwave filter.
In addition, because the relaxation oscillation frequency of semiconductor laser is determined by following formula,
F in formula
rbe relaxation oscillation frequency, g is difference gain of light coefficient, γ
pfor photon attenuation speed, P
0for laser cavity homeostasis photon density.Thus can obtain different relaxation oscillation frequency by the design parameter of careful setting laser device, then obtain different ring cavity frequencies of oscillation.And for the semiconductor laser that has been made, by changing the bias current of laser, can then change laser cavity homeostasis photon density P
0; Or by changing the working temperature of laser, then change photon attenuation speed γ in laser cavity
pchange the relaxation oscillation frequency f of laser
r, finally realize the change of ring cavity frequency of oscillation.In brief, the tuning of the frequency of oscillation of oscillator of the present invention output can be realized simply by the bias current and working temperature changing distributed feedback type semiconductor laser 1.
In addition, because the present invention is the optical-electronic oscillator realized based on directly modulation distributed feedback type semiconductor laser 1, thus peak frequency tuning range is determined by the modulation bandwidth of distributed feedback type semiconductor laser 1.
Above-described specific embodiment; further detailed description has been carried out to object of the present invention, technical scheme and beneficial effect; be understood that; the foregoing is only specific embodiments of the invention; its object just understands method of the present invention and core concept thereof for helping, and is not limited to the present invention, within the spirit and principles in the present invention all; any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1., based on an optical-electronic oscillator for directly modulation distributed feedback type semiconductor laser, it is characterized in that this optical-electronic oscillator comprises distributed feedback type semiconductor laser (1), monomode fiber (2), 10:90 optical branching device (3), optical-electrical converter (4), low noise wideband microwave amplifier (5), 10:90 electric shunt (6), electric adjustable attenuator (7); Wherein, distributed feedback type semiconductor laser (1), monomode fiber (2), 10:90 optical branching device (3), optical-electrical converter (4) are connected in turn by optical fiber; Optical-electrical converter (4), low noise wideband microwave amplifier (5), 10:90 electric shunt (6), electric adjustable attenuator (7), distributed feedback type semiconductor laser (1) are connected in turn by microwave coaxial line; By regulating bias current and the working temperature of distributed feedback type semiconductor laser (1), at the tunable high-quality microwave signal of 90% end generation wideband frequency of 10:90 electric shunt (6);
Described distributed feedback type semiconductor laser (1) is the single-mode laser of the band internal insulation device of general commercial;
Described monomode fiber (2) is G.652 standard single-mode fiber;
The optical coupler that described 10:90 optical branching device (3) is made up of an input port and port 1. with two output ports; Wherein 2. first output port and port export the energy of 10%, and 3. second output port and port export the energy of 90%;
The electric coupling that 6. described 10:90 electric shunt (6) is 5. made up of with port an input port and port 4. with two output ports and port; 5. its middle port exports the energy of 10%, and 6. port exports the energy of 90%;
Described electric adjustable attenuator (7) attenuation should be greater than 20dB.
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| CN104655954B (en) * | 2014-03-19 | 2018-11-27 | 李斐 | A kind of passive transient simulation signal capture and electric light photoelectric converter |
| CN104934853A (en) * | 2015-07-06 | 2015-09-23 | 中国科学院半导体研究所 | A photoelectric oscillator based on a direct-modulation semiconductor dual-mode laser |
| CN106067650A (en) * | 2016-07-15 | 2016-11-02 | 中国科学院半导体研究所 | Based on the microwave generator of warbling amplifying feedback laser |
| CN110324018A (en) * | 2019-07-25 | 2019-10-11 | 合肥本源量子计算科技有限责任公司 | A kind of microwave signal annular delivery structure |
| CN112103755A (en) * | 2020-08-18 | 2020-12-18 | 电子科技大学 | Photoelectric oscillator based on directly-modulated light injection semiconductor laser |
| CN112928598B (en) * | 2021-01-20 | 2022-04-01 | 华中科技大学 | Regulation and control device of feedback type semiconductor laser |
| CN113394646B (en) * | 2021-06-15 | 2022-09-23 | 贵州航天计量测试技术研究所 | Tuned optoelectronic oscillator and feedback control method thereof |
| CN113660037A (en) * | 2021-08-11 | 2021-11-16 | 中国人民解放军陆军工程大学 | Detection device and detection method for photon-assisted detection of weak radio frequency signals |
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Address after: No. 2, No. 210007, royal road, Nanjing, Jiangsu Patentee after: PLA Military Engineering University Address before: No. 2, No. 210007, royal road, Nanjing, Jiangsu Patentee before: Univ. of Science and Engineering, PLA |
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