CN103398989B - Chip-type surface plasma spectrometer - Google Patents
Chip-type surface plasma spectrometer Download PDFInfo
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- CN103398989B CN103398989B CN201310359206.9A CN201310359206A CN103398989B CN 103398989 B CN103398989 B CN 103398989B CN 201310359206 A CN201310359206 A CN 201310359206A CN 103398989 B CN103398989 B CN 103398989B
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- surface plasma
- interference structure
- slit
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Abstract
The present invention provides a chip-type surface plasma spectrometer, which comprises a metal interference structure and a photoelectric detector array, wherein the metal interference structure comprises a metal film having a nano-scale thickness, the metal film is provided with a through slit and a plurality of grooves, distances between every groove and the slit are gradually increased, the photoelectric detector array is positioned below the metal interference structure, and the metal interference structure and the photoelectric detector array are combined to form the chip-type surface plasma spectrometer. The spectroscopy structure of the chip-type surface plasma spectrometer is the nano-scale film, such that the difficult problem of chip scale miniaturization of the spectrometer is solved.
Description
Technical field
The present invention relates to a kind of spectrographic detection technology and a kind of surface plasma optical technology, specifically a kind of novel Chip-type surface plasma spectrometer.
Background technology
Spectrometer is one of basic optical inspection tool, widely uses in every field.The spectrometer of current business is mainly optical grating diffraction type and Fourier transform type, and in order to ensure spectral resolution, the volume of these two kinds of spectrometers is all comparatively large, is difficult to further miniaturization.Surface plasma bulk optics is because of its sub-wavelength characteristic, and great potential in the miniaturization, chip of optical device, therefore obtains fast development in nearly ten years in sensing, optical antenna, waveguide, modulator etc.But the high-resolution spectroscopy Detection Techniques based on surface plasma principle but never propose.
Summary of the invention
The technical problem to be solved in the present invention is: the size restriction breaking through existing spectrometer, a kind of chip-shaped surface plasma spectrometer is provided, spectrum is carried out with metal interference structure, realize the detection of interferogram again with the photoelectric array detector of combining closely with it, finally obtain tested spectrum with Fourier transform.
The present invention solves the problems of the technologies described above the technical scheme of employing: a kind of Chip-type surface plasma spectrometer, is made up of metal interference structure and photodetector array, and its feature is as follows:
(1) metal interference structure is made up of the metal film of nanometer grade thickness, and it has a straight joint and some grooves, the distance of each groove and straight joint increases gradually;
(2) photodetector array is positioned at below metal interference structure, and both form Chip-type surface plasma spectrometer after combining.
Tell in feature (1) metal interference structure in metal material be gold, silver or aluminium;
In metal interference structure in described feature (1), metal thickness is 200-300nm;
The degree of depth of the groove in described feature (1) is 20-100nm;
In described feature (1), the width of straight joint and groove is 250-400nm;
In described feature (1), the distance of groove and straight joint equidistantly increases progressively for step-length be less than wavelength 1/2 from 0;
In described feature (2), photodetector array is CCD or CMOS;
In described feature (1), the length of each groove is the integral multiple of photodetector array unit pixel in described feature (2);
Described spectrometer is in Spectroscopy procedures, after described metal interference structure is penetrated in tested illumination, part light is through the direct transmission of slit, another part is through groove scattering, surface plasma wave is produced in metal surface, and propagate to slit, the opposite side of metal interference structure is coupled to again by slit, produce with direct transmitted light and interfere, because the distance of groove and slit is change, therefore different slit diverse location places surface plasma wave is different with the optical path difference of direct transmitted wave, form interferogram thus, this interferogram is by described photodetector array record, as Fourier transform, tested spectrum is obtained to recorded interferogram.
According to metal surface plasma body excitation theory, the wave vector k of the surface plasma wave formed by groove scattering
spmeet following formula:
Wherein, k
0for free space wave vector, ε
m, ε
dbe respectively the specific inductive capacity of metal and surrounding medium.
According to electromagnetic wave superposition theory, the interference light intensity I of surface plasma wave and direct transmitted light meets following formula:
Wherein I
0(λ) be incident intensity, D is the distance of groove and slit,
for compensation of phase.This formula meets cosine Fourier transform rule, and therefore, the spectrum of incident light can carry out cosine Fourier transform to interferogram and obtain, that is:
The present invention's advantage is compared with prior art:
(1) spectrometer of the present invention is of a size of chip dimension, much smaller than current business spectrometer, is therefore with a wide range of applications in light is integrated;
(2) spectrometer of the present invention make use of surface plasma principle of interference, be different from traditional Principle of Grating Diffraction, difference interferogram also having essence is being obtained with conventional Fourier transform spectrometer, therefore the metal interference structure playing point light action is the film of one deck hundreds of nanometer, finally makes spectrometer overall dimensions reach chip-scale.
Accompanying drawing explanation
Fig. 1 is the overall schematic of Chip-type surface plasma spectrometer of the present invention, and wherein 11 is metal interference structure, and 12 is photodetector array;
Fig. 2 is the vertical view of metal interference structure, and wherein 21 is metallic film, and 22 is the straight joint on metallic film, and 23 is groove;
Fig. 3 is the side view of metal interference structure, and wherein 31 is metallic film, and 32 is the straight joint on metallic film, and 33 is groove;
Fig. 4 is spectrum one test result data figure;
Fig. 5 is that the details of Fig. 4 amplifies result.
Embodiment
The present invention is introduced in detail below in conjunction with the drawings and the specific embodiments.But following embodiment is only limitted to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and namely can realize the full content of the claims in the present invention by following examples those skilled in the art.
Embodiment 1
Chip-type surface plasma spectrometer, is made up of metal interference structure and photodetector array:
(1) metal interference structure is made up of the metal film of nanometer grade thickness, and it has a straight joint and some grooves, the distance of each groove and straight joint increases gradually;
(2) photodetector array is positioned at below metal interference structure, and both form Chip-type surface plasma spectrometer after combining.
Tell in feature (1) metal interference structure in metal material be gold, silver or aluminium;
In metal interference structure in described feature (1), metal thickness is 200-300nm;
The degree of depth of the groove in described feature (1) is 20-100nm;
In described feature (1), the width of straight joint and groove is 250-400nm;
In described feature (1), the distance of groove and straight joint equidistantly increases progressively for step-length be less than wavelength 1/2 from 0;
In described feature (2), photodetector array is CCD or CMOS;
In described feature (1), the length of each groove is the integral multiple of photodetector array unit pixel in described feature (2);
Described spectrometer is in Spectroscopy procedures, after described metal interference structure is penetrated in tested illumination, part light is through the direct transmission of slit, another part is through groove scattering, surface plasma wave is produced in metal surface, and propagate to slit, the opposite side of metal interference structure is coupled to again by slit, produce with direct transmitted light and interfere, because the distance of groove and slit is change, therefore different slit diverse location places surface plasma wave is different with the optical path difference of direct transmitted wave, form interferogram thus, this interferogram is by described photodetector array record, as Fourier transform, tested spectrum is obtained to recorded interferogram.
According to metal surface plasma body excitation theory, the wave vector k of the surface plasma wave formed by groove scattering
spmeet following formula:
Wherein, k
0for free space wave vector, ε
m, ε
dbe respectively the specific inductive capacity of metal and surrounding medium.
According to electromagnetic wave superposition theory, the interference light intensity I of surface plasma wave and direct transmitted light meets following formula:
Wherein I
0(λ) be incident intensity, D is the distance of groove and slit,
for compensation of phase.This formula meets cosine Fourier transform rule, and therefore, the spectrum of incident light can carry out cosine Fourier transform to interferogram and obtain, that is:
Embodiment 2
Chip-type surface plasma spectrometer, be made up of metal interference structure and photodetector array, implementation procedure is as follows:
(1) metal interference structure is made up of the metal film of nanometer grade thickness, and it has a straight joint and some grooves, the distance of each groove and straight joint increases gradually;
(2) photodetector array is positioned at below metal interference structure, and both form Chip-type surface plasma spectrometer after combining;
(3) in metal interference structure, metal material is gold;
(4) thickness of metal interference structure is 200nm;
(5) width of straight joint and groove is 350nm;
(6) distance of groove and straight joint is that step-length equidistantly increases progressively with 300nm from 0, and ultimate range is 100um;
(7) photodetector array is the CCD of pixel dimension 20um × 20um;
(8) length of each groove is 20um;
(9) invented spectrometer is irradiated after the laser alignment being 750nm by wavelength, the interferogram that record CCD detection arrives;
(10) by the interferogram that CCD detects with the formula (3) carry out Fourier transform, as shown in accompanying drawing 4, accompanying drawing 5, when wavelength is 750nm, its spectral resolution is 3.84nm.
Embodiment 3
Chip-type surface plasma spectrometer, be made up of metal interference structure and photodetector array, implementation procedure is as follows:
(1) metal interference structure is made up of the metal film of nanometer grade thickness, and it has a straight joint and some grooves, the distance of each groove and straight joint increases gradually;
(2) photodetector array is positioned at below metal interference structure, and both form Chip-type surface plasma spectrometer after combining;
(3) in metal interference structure, metal material is gold;
(4) thickness of metal interference structure is 300nm;
(5) width of straight joint and groove is 400nm;
(6) distance of groove and straight joint is that step-length equidistantly increases progressively with 300nm from 0, and ultimate range is 100um;
(7) photodetector array is the CCD of pixel dimension 20um × 20um;
(8) length of each groove is 20um;
(9) invented spectrometer is irradiated after the laser alignment being 750nm by wavelength, the interferogram that record CCD detection arrives;
(10) by the interferogram that CCD detects with the formula (3) carry out Fourier transform.
The part that the present invention does not elaborate belongs to the known technology of this area.
Although be described the illustrative embodiment of the present invention above; so that the technician of this technology neck understands the present invention; but should be clear; the invention is not restricted to the scope of embodiment; to those skilled in the art; as long as various change to limit and in the spirit and scope of the present invention determined, these changes are apparent, and all innovation and creation utilizing the present invention to conceive are all at the row of protection in appended claim.
Claims (1)
1. a Chip-type surface plasma spectrometer, is made up of metal interference structure and photodetector array, and its feature is as follows:
(1) metal interference structure is made up of the metal film of nanometer grade thickness, and it has a straight joint and some grooves, the distance of each groove and straight joint increases gradually;
(2) photodetector array is positioned at below metal interference structure, and both form Chip-type surface plasma spectrometer after combining;
In described metal interference structure, metal material is gold, silver or aluminium;
In described metal interference structure, metal thickness is 200-300nm;
The degree of depth of described groove is 20-100nm;
Described straight joint and the width of groove are 250-400nm;
Described groove and the distance of straight joint equidistantly increase progressively for step-length be less than wavelength 1/2 from 0;
Described photodetector array is CCD or CMOS;
The length of each described groove is the integral multiple of described photodetector array unit pixel;
In Spectroscopy procedures, after described metal interference structure is penetrated in tested illumination, part light is through the direct transmission of slit, another part is through groove scattering, surface plasma wave is produced in metal surface, and propagate to slit, the opposite side of metal interference structure is coupled to again by slit, produce with direct transmitted light and interfere, because the distance of groove and slit is change, therefore different slit diverse location places surface plasma wave is different with the optical path difference of direct transmitted wave, form interferogram thus, this interferogram is by described photodetector array record, as Fourier transform, tested spectrum is obtained to recorded interferogram,
According to metal surface plasma body excitation theory, the wave vector k of the surface plasma wave formed by groove scattering
spmeet following formula:
Wherein, k
0for free space wave vector, ε
m, ε
dbe respectively the specific inductive capacity of metal and surrounding medium;
According to electromagnetic wave superposition theory, the interference light intensity I of surface plasma wave and direct transmitted light meets following formula:
Wherein I
0(λ) be incident intensity, D is the distance of groove and slit,
for compensation of phase, this formula meets cosine Fourier transform rule, and therefore, the spectrum of incident light can carry out cosine Fourier transform to interferogram and obtain, that is:
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310359206.9A CN103398989B (en) | 2013-08-16 | 2013-08-16 | Chip-type surface plasma spectrometer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310359206.9A CN103398989B (en) | 2013-08-16 | 2013-08-16 | Chip-type surface plasma spectrometer |
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| CN103398989A CN103398989A (en) | 2013-11-20 |
| CN103398989B true CN103398989B (en) | 2015-05-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9899547B2 (en) | 2016-04-25 | 2018-02-20 | International Business Machines Corporation | Multi-wavelength detector array incorporating two dimensional and one dimensional materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105628199B (en) * | 2014-10-26 | 2018-06-05 | 中国科学院重庆绿色智能技术研究院 | Chip-shaped spectrometer with second wavelength metallic structure |
| EP3420305A4 (en) * | 2016-02-26 | 2019-10-16 | The Regents of The University of California | Filter array reconstructive spectrometry |
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| US7118710B2 (en) * | 2000-10-30 | 2006-10-10 | Sru Biosystems, Inc. | Label-free high-throughput optical technique for detecting biomolecular interactions |
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Non-Patent Citations (3)
| Title |
|---|
| Surface enhanced Raman scattering substrate with metallic nanogap array fabricated by etching the assembled polystyrene spheres array;Liangping Xia;《Optics Express》;20130501;第21卷(第9期) * |
| 表面等离子体波成像传感器的实验研究;金凤泽等;《红外与激光工程》;20100430;第39卷(第2期);第275-278页 * |
| 表面等离子谐振(SPR)生化分析仪的研制与发展;崔大付;《现代科学仪器》;20070228;第3-7页 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9899547B2 (en) | 2016-04-25 | 2018-02-20 | International Business Machines Corporation | Multi-wavelength detector array incorporating two dimensional and one dimensional materials |
| US10069028B2 (en) | 2016-04-25 | 2018-09-04 | International Business Machines Corporation | Multi-wavelength detector array incorporating two dimensional and one dimensional materials |
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