CN103377696B - A kind of system for storage unit offer stabilized voltage - Google Patents
A kind of system for storage unit offer stabilized voltage Download PDFInfo
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- CN103377696B CN103377696B CN201210122819.6A CN201210122819A CN103377696B CN 103377696 B CN103377696 B CN 103377696B CN 201210122819 A CN201210122819 A CN 201210122819A CN 103377696 B CN103377696 B CN 103377696B
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Abstract
The present invention relates to a kind of system for storage unit offer stabilized voltage. This system comprises: constant current circuit, electric current mirror, PMOS MP1, six NMOS tube MN1 to MN6; Wherein, the two ends that on electric current mirror, electric current is identical are connected with the output terminal of constant current circuit and the source electrode of MP1 respectively; The grid of MP1 is connected with the grid of MN6, and then connects an enable signal; The drain electrode of MP1 is connected with the drain electrode of drain electrode, MN6 with the grid of MN3, the drain electrode of MN4, the grid of MN5 respectively; The grid of MN4 is connected with the source electrode of MN3 and the drain electrode of MN1 respectively; The grid of MN1 and the grid of MN2 all connect power supply; The source electrode of MN1 is connected with the drain electrode of MN2; The source electrode of MN2 connects storage unit; The source grounding of the source electrode of MN4, the source electrode of MN5 and MN6. The present invention can provide the stabilized voltage not changed with voltage of supply to storage unit.
Description
Technical field
The present invention relates to reservoir designs technical field, particularly relate to a kind of system for storage unit offer stabilized voltage.
Background technology
In the process that storer carries out reading operation, it is necessary to control the service voltage of storage unit at same level, and in order to ensure the stable performance of storer, this service voltage should be stablized, and does not change with the change of voltage of supply. For flash storage, the service voltage of its storage unit should stabilize to 1 volt.
The structure iron of the system providing voltage for storage unit (being designated as CELL) that Fig. 1 provides for prior art, the CELL MOS in this figure manages (metal oxide semiconductor field effect tube) and realizes, and service voltage is added in its drain electrode. As shown in Figure 1, this system comprises a PMOS (P-channel metal oxide semiconductor field effect tube) MP1-1 and five NMOS tube (N-channel metal oxide semiconductor field effect tube) MN1-1, MN1-2, MN1-3, MN1-4 and MN1-5. Wherein, the source electrode of MP1-1, the grid of MN1-1 and MN1-2 all connect power supply, the source grounding of MN1-4 and MN1-5; The grid of MP1-1 is connected with the grid of MN1-5, and then is connected with enable signal EN; The grid of the drain electrode of MP1-1, the drain electrode of MN1-5 with MN1-4 and MN1-3 is connected; The grid of the drain electrode of MN1-1, the source electrode of MN1-3 and MN1-4 is connected; The source electrode of MN1-1 is connected with the drain electrode of MN1-2; The CELL working in linear section is powered by the source electrode of MN1-2.
Setting MN1-4 is operated in linear section, and MN1-3 is operated in saturation region, then have following formula to set up:
K3(VG-VS-VT3)2=VS/RC(1)
Wherein, K3For relevant to the electrology characteristic of MN1-3 constant, VGFor the grid voltage of MN1-3, VSFor the source voltage of MN1-3, VT3For the threshold voltage of MN1-3, RCFor the resistance of CELL.
Formula (1) is solved it will be seen that VSIt is by VGUniquely determine.
In Fig. 1, VGBy the resistance of MN1-4 and MP1-1, voltage of supply VDD dividing potential drop is obtained, thus can obtain formula (2) and set up:
A in this formula is a constant, K4For relevant to the electrology characteristic of MN1-3 constant, VT4For the threshold voltage of MN1-4, R1For the conducting resistance of MP1-1.
Solve by joining vertical (1) and formula (2): VGUniquely determine by VDD. Therefore, VDD can determine VGAnd VSUnique solution, like this, when VDD shakiness, VSAlso just unstable, the voltage of this system supply CELL drain terminal is also just unstable.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of system for storage unit offer stabilized voltage, can provide the stabilized voltage not changed with voltage of supply to storage unit.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of system for storage unit offer stabilized voltage, and this system comprises: constant current circuit, electric current mirror, P-channel metal oxide semiconductor field effect tube MP1, six N-channel metal oxide semiconductor field effect tube MN1, MN2, MN3, MN4, MN5 and MN6; Wherein,
The two ends that on described electric current mirror, electric current is identical are connected with the described output terminal of constant current circuit and the source electrode of MP1 respectively;
The grid of MP1 is connected with the grid of MN6, and then connects an enable signal;
The drain electrode of MP1 is connected with the drain electrode of drain electrode, MN6 with the grid of MN3, the drain electrode of MN4, the grid of MN5 respectively;
The grid of MN4 is connected with the source electrode of MN3 and the drain electrode of MN1 respectively;
The grid of MN1 and the grid of MN2 all connect power supply; The source electrode of MN1 is connected with the drain electrode of MN2; The source electrode of MN2 connects described storage unit;
The source grounding of the source electrode of MN4, the source electrode of MN5 and MN6.
The invention has the beneficial effects as follows: under the present invention in working order, by arranging enable signal, MP1 conducting can be made and MN6 is turned off, like this, constant current circuit provides stable electric current by electric current mirror to MP1, this electric current is shunted mutually through MN4 and MN5 two NMOS tube, for MN3, to provide one unrelated with voltage of supply, and only stable with this current related grid voltage, thus when voltage of supply changes, the drain terminal voltage of MN4 and MN5 can play regulating effect, thus the source voltage making MN3 keeps stable, and then the service voltage of stable storage unit. like this, the present invention just reaches the object providing the stabilized voltage not changed with voltage of supply to storage unit.
On the basis of technique scheme, the present invention can also do following improvement:
Further, described constant current circuit comprises: constant voltage source and a N-channel metal oxide semiconductor field effect tube MN7 being operated in saturation region;
The grid of the output termination MN7 in described constant voltage source;
The drain electrode of MN7 is as the output terminal of described constant current circuit;
The source ground of MN7.
Further, described electric current mirror comprises P-channel metal oxide semiconductor field effect tube MP2 and MP3 that two source electrodes are all connected with described power supply;
The grid of MP3 is connected with drain electrode;
The grid of MP2 is connected with the grid of MP3;
The drain electrode of the drain electrode of MP3 and MP2, as the identical two ends of electric current on described electric current mirror, is connected with the described output terminal of constant current circuit and the source electrode of MP1 respectively.
Further, described enable signal is lower level, so that MN6 is in shutoff state.
Further, MN4 works in linear section.
Further, MN3 works in saturation region.
Accompanying drawing explanation
The structure iron of the system that voltage is provided for storage unit that Fig. 1 provides for prior art;
Fig. 2 is the structure iron of the system providing stabilized voltage for storage unit provided by the invention.
Embodiment
The principle of the present invention and feature being described below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit the scope of the present invention.
Fig. 2 is the structure iron of the system providing stabilized voltage for storage unit provided by the invention. As shown in Figure 2, the label of storage unit is CELL, and its word line voltage is wL. In Fig. 2, this system comprises: constant current circuit, electric current mirror, PMOS (P-channel metal oxide semiconductor field effect tube) MP1, six NMOS tube (N-channel metal oxide semiconductor field effect tube) MN1, MN2, MN3, MN4, MN5 and MN6. As basic circuit devcie, PMOS and NMOS tube all have source electrode, grid and drain electrode, provide as follows in fig. 2: the source electrode of all PMOS is all located thereon side, and drain electrode is all positioned on the downside of it, and the source electrode of NMOS tube is all positioned on the downside of it, drain electrode is all located thereon side. PMOS is described for MP1 with the MP2 being all PMOS: the source electrode of MP1 being positioned at upside is connected with the drain electrode of the MP2 being positioned at downside. For MN6, NMOS tube is described: the source ground of MN6, and drains and connect the drain electrode that MP1 is positioned at downside.
Electric current mirror is a kind of elementary cell of mimic channel, and its feature is, the two ends that electric current mirror has electric current identical, it means that the size of current at these two ends and the flow direction are all identical, and thus the main effect of electric current mirror is as load elements and provides bias current. The two ends that on electric current mirror provided by the present invention, electric current is identical are connected with the output terminal of constant current circuit and the source electrode of MP1 respectively, owing to constant current circuit can provide stable electric current, thus also it is exactly stable electric current by electric current mirror to the electric current that the source electrode of MP1 exports, the impact of voltage of supply can not be subject to and change.
As shown in Figure 2, the grid of MP1 is connected with the grid of MN6, and then connects an enable signal (label is EN). By the setting of EN, MP1 and MN6 can be made to be operated in different states, such as, when the system shown in Fig. 2 in running order and when powering to CELL, EN can be set and be in lower level, like this, MP1 is just in conducting state, and MN6 is in shutoff state.
In the present invention, the drain electrode of MP1 is connected with the drain electrode of drain electrode, MN6 with the grid of MN3, the drain electrode of MN4, the grid of MN5 respectively, and the grid of MN4 is connected with the source electrode of MN3 and the drain electrode of MN1 respectively. Like this, when being powered to CELL by this system, the steady current exporting MP1 to arrives MN3 through the shunting action of MN4 and MN5, this shunting action makes when voltage of supply VDD changes, the drain terminal voltage of MN4 and MN5 can play regulating effect, thus the source voltage making MN3 keeps stable.
The grid of MN1 and the grid of MN2 all connect power supply; The source electrode of MN1 is connected with the drain electrode of MN2; The source electrode of MN2 connects storage unit (CELL), the source grounding of the source electrode of MN4, the source electrode of MN5 and MN6.
As can be seen here, under the present invention in working order, by arranging enable signal, MP1 conducting can be made and MN6 is turned off, like this, constant current circuit provides stable electric current by electric current mirror to MP1, this electric current is shunted mutually through MN4 and MN5 two NMOS tube, for MN3 provides unrelated with voltage of supply and only stable with this current related grid voltage, thus when voltage of supply changes, the drain terminal voltage of MN4 and MN5 can play voltage clamp effect, thus the source voltage making MN3 keeps stable, and then the service voltage of stable storage unit. Like this, the present invention just reaches the object providing the stabilized voltage not changed with voltage of supply to storage unit.
Fig. 2 gives the structure of an embodiment of constant current circuit. As shown in Figure 2, constant current circuit can comprise constant voltage source 201 and NMOS tube (N-channel metal oxide semiconductor field effect tube) MN7 being operated in saturation region, wherein, the grid of the output termination MN7 in constant voltage source 201, its grid being MN7 provides a constant voltage bias, forms constant electric current with the drain electrode at MN7. In Fig. 2, the drain electrode of MN7 is as the output terminal of constant current circuit thus connects one of two ends that on electric current mirror, electric current is identical, and the source ground of MN7.
In the embodiment of above-mentioned constant current circuit, constant voltage source 201 can provide a constant biased voltage to the grid of MN7, produce not with the stable reference electric current of voltage of supply and temperature variation with the drain electrode at MN7, and then play the object that steady current is provided to electric current mirror.
Fig. 2 gives the structure of an embodiment of electric current mirror. As shown in Figure 2, the electric current mirror in the present invention can comprise in PMOS (P-channel metal oxide semiconductor field effect tube) MP2 and MP3, Fig. 2 that two source electrodes are all connected with power supply, and power supply position indicates with voltage of supply VDD.
The grid of MP3 is connected with drain electrode. The grid of MP2 is connected with the grid of MP3.
The drain electrode of the drain electrode of MP3 and MP2, as the identical two ends of electric current on electric current mirror, is connected with the output terminal of constant current circuit and the source electrode of MP1 respectively. As shown in Figure 2, the drain electrode of MP3 is connected with the drain electrode of MN7 in above-mentioned constant current circuit embodiments, and the drain electrode of MP2 is connected with the source electrode of MP1. Like this, the steady current that constant current circuit provides just can export the source electrode of MP1 to through the current mirror action of this electric current mirror.
A preferred working order of the MN4 in the present invention is for working in linear section, and the preferred working order of MN3 is for being operated in saturation region.
Fig. 2 is done circuit analysis, following formula can be obtained according to the electric current flowing to MN1 drain electrode and set up:
K ' in this formula3For relevant to the electrology characteristic of MN3 constant, V 'GFor the grid voltage of MN3, V 'SFor the source voltage of MN3, V 'T3For the threshold voltage of MN3, R 'CFor the resistance of CELL.
Identical with the analytical results of formula (1), can obtain equally as drawn a conclusion by solving formula (3): V 'SIt is by V 'GUniquely determine.
Equally, following formula can be obtained according to the electric current flowing to MN4 drain electrode to set up:
I-K��5(V��G-V��T5)2=K '4V��G(V��S-V��T4)(4)
I in this formula is the electric current flowing through MP2, K '4With K '5It is respectively the constant relevant to the electrology characteristic of MN4 and the constant relevant with the electrology characteristic of MN5, V 'T4With V 'T5It is respectively the threshold voltage of MN4 and the threshold voltage of MN5.
By joining vertical (3) and formula (4), can obtain as drawn a conclusion: V 'GWith V 'SUniquely determine by I. Like this, the voltage of supply CELL is also just unrelated with voltage of supply (VDD), and owing to I is provided by constant current circuit, even if VDD changes, native system also can ensure the stable of the service voltage of storage unit.
It thus is seen that the present invention has the following advantages:
(1) under the present invention in working order, by arranging enable signal, MP1 conducting can be made and MN6 is turned off, like this, constant current circuit provides stable electric current by electric current mirror to MP1, this electric current is shunted mutually through MN4 and MN5 two NMOS tube, for MN3 provides unrelated with voltage of supply and only stable with this current related grid voltage, thus when voltage of supply changes, the drain terminal voltage of MN4 and MN5 can play regulating effect, thus the source voltage making MN3 keeps stable, and then the service voltage of stable storage unit. Like this, the present invention just reaches the object providing the stabilized voltage not changed with voltage of supply to storage unit.
The foregoing is only the better embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment of doing, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the system for storage unit offer stabilized voltage, it is characterized in that, this system comprises: constant current circuit, electric current mirror, P-channel metal oxide semiconductor field effect tube MP1, six N-channel metal oxide semiconductor field effect tube MN1, MN2, MN3, MN4, MN5 and MN6; Wherein,
The two ends that on described electric current mirror, electric current is identical are connected with the described output terminal of constant current circuit and the source electrode of MP1 respectively;
The grid of MP1 is connected with the grid of MN6, and then connects an enable signal;
The drain electrode of MP1 is connected with the drain electrode of drain electrode, MN6 with the grid of MN3, the drain electrode of MN4, the grid of MN5 respectively;
The grid of MN4 is connected with the source electrode of MN3 and the drain electrode of MN1 respectively;
The grid of MN1 and the grid of MN2 all connect power supply; The source electrode of MN1 is connected with the drain electrode of MN2; Described in the source electrode of MN2 connects
Storage unit;
The source grounding of the source electrode of MN4, the source electrode of MN5 and MN6.
2. system according to claim 1, it is characterised in that, described constant current circuit comprises: constant voltage source and a N-channel metal oxide semiconductor field effect tube MN7 being operated in saturation region;
The grid of the output termination MN7 in described constant voltage source;
The drain electrode of MN7 is as the output terminal of described constant current circuit;
The source ground of MN7.
3. system according to claim 1 and 2, it is characterised in that, described electric current mirror comprises P-channel metal oxide semiconductor field effect tube MP2 and MP3 that two source electrodes are all connected with described power supply;
The grid of MP3 is connected with drain electrode;
The grid of MP2 is connected with the grid of MP3;
The drain electrode of the drain electrode of MP3 and MP2 is as the identical two ends of electric current on described electric current mirror, and the drain electrode of MP3 is connected with the output terminal of described constant current circuit, and the drain electrode of MP2 is connected with the source electrode of MP1.
4. system according to claim 1, it is characterised in that, described enable signal is lower level, so that MN6 is in shutoff state.
5. system according to claim 1, it is characterised in that, MN4 works in linear section.
6. system according to claim 1, it is characterised in that, MN3 works in saturation region.
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| CN103377696B true CN103377696B (en) | 2016-06-08 |
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| CN103956179B (en) * | 2014-05-12 | 2017-05-24 | 北京兆易创新科技股份有限公司 | Sense amplifier and memory system using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674155A (en) * | 2004-03-26 | 2005-09-28 | 恩益禧电子股份有限公司 | Power supply circuit and semiconductor storage device with the power supply circuit |
| CN102420002A (en) * | 2011-11-17 | 2012-04-18 | 中国科学院微电子研究所 | ATD-assisted current sense amplifier |
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| JP4070533B2 (en) * | 2002-07-26 | 2008-04-02 | 富士通株式会社 | Semiconductor integrated circuit device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674155A (en) * | 2004-03-26 | 2005-09-28 | 恩益禧电子股份有限公司 | Power supply circuit and semiconductor storage device with the power supply circuit |
| CN102420002A (en) * | 2011-11-17 | 2012-04-18 | 中国科学院微电子研究所 | ATD-assisted current sense amplifier |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |