CN103374754A - Sapphire material and preparation method thereof - Google Patents
Sapphire material and preparation method thereof Download PDFInfo
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- CN103374754A CN103374754A CN2012101260543A CN201210126054A CN103374754A CN 103374754 A CN103374754 A CN 103374754A CN 2012101260543 A CN2012101260543 A CN 2012101260543A CN 201210126054 A CN201210126054 A CN 201210126054A CN 103374754 A CN103374754 A CN 103374754A
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Abstract
The invention discloses a preparation method of a sapphire material. The preparation method comprises the following steps: inoculating a sapphire crystal seed to a melt object; gradually cooling the melt object by a heat exchange manner; crystallizing the melt object on an a axial direction of the sapphire crystal seed to form a sapphire crystal; and extracting the sapphire material from a specific axial direction of the sapphire crystal.
Description
Technical field
The present invention relates to a kind of sapphire material and preparation method thereof, be specifically related to a kind of axial sapphire material of a growth and preparation method thereof that has.
Background technology
In recent years, because the demand of intelligent mobile phone significantly increases, therefore, the demand of the employed spare part of intelligent mobile phone also increases thereupon.These spare parts have comprised the protective glass that is used for mobile phone camera or the cover glass (cover glass) that is used for touch panel of cell phone; they are take glass as main raw mostly, and the employed material of device pattern of the button on the mobile phone, trade mark also makes transparent material into gradually from metallic substance.Although glass material have easily obtain, cost is lower and the easy advantage of processing, yet the shortcoming of the mechanical properties such as its hardness is not good, ultimate compression strength is not enough causes its problem in practical application.Although can improve above-mentioned shortcoming by techniques such as hard coat and chemical ion reinforcements, also reflect the problem of cost and environmental protection.
In the process of existing glass production processing, the general employed non-alkali glass of consumer electronic product is under the condition of melting, and non-alkali glass is heated to soften the formation glass cream.After through the stirring in the manufacturing processed, air and impurity are sneaked among the glass cream of this non-alkali glass easily; This situation is so that the yield of this product is not good.Therefore, in the processing procedure of non-alkali glass, usually need to add such as subsidiary material such as arsenic and halogenide to eliminate bubble and the impurity in glass cream.Arsenic is harmful strong toxicant, and it can cause the sequela such as arseniasis or Blackfoot Disease, and therefore, arsenic has potential impact for the safety of the operating personnel in the processing procedure.Halogenide is several times of carbonic acid gas on the impact of Greenhouse effect, and halogenide is banned use of by the advanced countries such as European Union and zone already.
For adapting to various countries to the requirement of environmental protection, the glass manufacturer such as Corning Incorporated and Japan AGC company are released new-type glassy product without the arsenic processing procedure successively, and its ultimate principle makes glass surface reach the effect of sclerosis for the surface at glass forms one deck class monocrystalline silicon layer.But even so, this type of glass through work program as grinding, still needing to strengthen processing procedure through chemical ion behind the procedure for processing such as boring, polishing and chamfering, next also need the sodium ion in the glass and impurity could be cemented out through the processing of molten salts processing procedure, to eliminate intracrystalline microdefect and the stress at glass, increase the intensity of glass so that the atomic arrangement in the glass is finer and close.
See also Fig. 1, it is for the synoptic diagram of glass processing processing procedure.In traditional glass processing processing procedure, in order to cater to the product designer to the requirement of outward appearance and the human consumer hobby to outward appearance, general glass can be sent glass processing factory processes to meet the finished product to the outward appearance of glass outward appearance demand to after manufacturing is finished.The processing procedure of glass processing comprises: the surface grinding of the burst that cuts, bursts apart of glass substrate, edge grinding, high-speed computing machine numerical control machine (CNC) Drilling operation, glass substrate, the surface finish of glass substrate, the chemical enhanced processing procedure of ion-exchange, glass substrate plated film, glass substrate printing, paste the assembling of gum and finished product.
In Fig. 1, glass baseplate is delivered to after the glass processing factory can carry out suitably cutting of size to it, utilizes diamond cutter to cut at the flat board of glass baseplate and marks required size, isolates the good suitably glass substrate of size of delineation in the mode of bursting apart again.The glass substrate of described suitable size is namely delivered to process zone the edge of glass substrate is ground and chamfering after taking-up, with the acute angle incised wound operator at the edge of avoiding glass substrate and can effectively avoid in operating process, causing product edge collapse angle and crack etc.The edge of glass substrate can carry out such as processing procedures such as high-speed computing machine numerical control machine Drilling operations at glass substrate according to product demand after complete through grinding chamfering, processes with the profile of according to demand glass substrate.
After the sharp processing of glass substrate is finished, namely can grind glass substrate, be ground to the suitable thickness size with the thickness with glass substrate.Then, glass substrate is polished, utilize polishing machine that bright mirror polish is carried out on the surface of glass substrate this moment.After polished glass substrate is finished, can carry out the chemical ion exchange to glass substrate immediately, make the sodium ion of glass be replaced as potassium ion with the sylvite that glass substrate is placed molten state.After glass substrate is finished the chemical ion exchanger, namely finish chemical enhanced processing procedure.
After chemical enhanced processing procedure is finished, carry out plated film according to demand, described plated film also can be subdivided into functional plated film and ornamental plated film again.Because through behind a series of work program, the optical property of glass substrate can change to some extent, functional plated film then can improve the optical property of glass.Generally can make transparent antireflection coatings at the one-sided or bilateral of glass substrate, this type of coatings material is metal oxide or conductor oxidate.Ornamental plated film then can allow glass substrate have more to dazzle beautiful outward appearance.And the processing procedure of implementing at glass baseplate surface, normal operation metal or metal oxide utilize the method for physical vapor deposition (PVD) to make its outward appearance have the gloss of metal in the surface of glass substrate deposition of material as material.Glass substrate after plated film is finished then can add such as printing process such as half tone silk-screen or the transfer printings of steel plate printing ink according to demand, and pastes macromolecule glue in the back side of glass substrate and make itself and other part do combination.
Table 1:
Because the hardness of chilled glass and compressive strength rate sapphire are poor, and sapphire through suitable processing and the optical characteristics behind the plated film near chilled glass, so sapphire is fit to be used as the transparent optical material of high rigidity and high compressive strength.Sapphire and ruby main component are all aluminium sesquioxide (α-Al
2O
3), be called corundum (corundum) ore by the formed jewel of aluminium sesquioxide crystallization, and sapphire presenting blueness because of its impurity that contains titanium dioxide, ruby presents redness because it contains chromic oxide, and ruby also can be used as optical material.
Existing sapphire crystal growing technology comprises Wella method (Verneuil), the long brilliant method of triumphant formula (Kyropoulos), heat-exchanging method (heat exchange method) etc.The made sapphire of Wella method is frangible and size is little, is not suitable for making large-sized sapphire.In the document of Taiwan number of patent application 200827500, mention the sapphire growth apparatuses of C face (C-plane) and method, the mentioned growth c-axis of this patent to sapphire, though known c-axis to sapphire can be used as the substrate of LED (for example gallium nitride based LED), if the sapphire that grows by this method also is unfavorable for following process except growth time the of a specified duration and consumes energy when using.
Summary of the invention
The axial method of growth used in the present invention a through after the long checking than the growth c-axis to sapphire have more the benefit of production and lower dislocation desity.And according to different demands, utilize the axial sapphire of growing up of a of the present invention also applicable to various purposes.
In view of hardness and the ultimate compression strength of above-mentioned chilled glass are not enough, the present invention proposes a kind of manufacture method of sapphire material, comprise following steps: a sapphire crystal seed is seeded in the melt thing.Upwards lift gradually this sapphire crystal seed and cause thermograde so that it cools off gradually at this melt thing, and make this melt thing in the axial crystallization of a of this sapphire crystal seed to form a sapphire crystal.From a specific axis of this sapphire crystal to extracting this sapphire material.
According to aforesaid method, the present invention proposes the manufacture method of another kind of sapphire material, comprise following steps: a sapphire crystal seed is seeded to a melt thing.With heat exchange method this melt thing is cooled off gradually, and make this melt thing in the axial crystallization of a of this sapphire crystal seed, to form a sapphire crystal.From a specific axis of this sapphire crystal to extracting this sapphire material.
According to aforesaid method, the present invention proposes the manufacture method of another kind of sapphire material, comprise following steps: provide to have the axial sapphire crystal of a growth, wherein this growth axially is that a of this sapphire crystal is axial, and the axial sapphire crystal growth of a is finished Shi Zehui and formed circle, square or polygonal crystal-type shape according to the crucible shape.
According to aforesaid method, the present invention proposes a kind of sapphire material, it comprises a sapphire crystal, and this sapphire crystal has one grows up axially, and wherein this growth axially is that a of this sapphire crystal is axial.
According to aforesaid method, the present invention proposes a kind of manufacture method of corundum material, comprise following steps: provide to have the axial sapphire crystal of growing up, wherein this growth axially is that a of this sapphire crystal is axial.From a specific axis of this sapphire crystal to extracting this sapphire material, wherein this specific axis is axial to a that is perpendicular to this sapphire crystal.
According to aforesaid method, the present invention proposes a kind of sapphire material, it comprises: a sapphire crystal, this sapphire crystal have one grows up axially, and wherein this growth axially is that a of this sapphire crystal is axial.
Description of drawings
Fig. 1 is the synoptic diagram of glass processing processing procedure;
Fig. 2 a is the synoptic diagram of the long brilliant equipment of the triumphant formula of first preferred embodiment of the invention.
Fig. 2 b is the synoptic diagram of sapphire crystal of the present invention.
Fig. 3 is the synoptic diagram of first preferred embodiment of the invention sapphire material manufacture method.
Fig. 4 is the synoptic diagram of second preferred embodiment of the invention heat exchanging apparatus.
Fig. 5 is the synoptic diagram of second preferred embodiment of the invention sapphire material manufacture method.
Fig. 6 a is the synoptic diagram that the third preferred embodiment of the invention line is cut processing units.
Fig. 6 b is the synoptic diagram that the third preferred embodiment of the invention line is cut processing units.
Fig. 7 a is the synoptic diagram of four preferred embodiment of the invention grinding plant.
Fig. 7 b is the synoptic diagram of another grinding plant of four preferred embodiment of the invention.
Fig. 8 is the synoptic diagram of fifth preferred embodiment of the invention polissoir.
Fig. 9 is the synoptic diagram of sixth preferred embodiment of the invention profile cutting.
Figure 10 is the synoptic diagram that the seventh preferred embodiment of the invention profile is ground.
Figure 11 is the synoptic diagram of sapphire manufacturing of the present invention and working method flow process.
The primary clustering nomenclature
20: the long brilliant equipment 30 of triumphant formula: heat exchanging apparatus
201,301: resistance heater 202,302: crucible
203,303: melt thing 204,304: the solid-liquid interface formation
205,305: sapphire crystal seed 206: the electric current copper ring
207,307: thermoscreen 306: current coil
208: sapphire crystal 209: sapphire material
308: heat exchanger tube 40: line is cut processing units
42: drive unit 44: the major trough wheel
46: diamond guide wheel group 48: some diamond lines
504: the sapphire substrate 702 after the line cutting: the sapphire substrate after the grinding
805: the sapphire substrate 50,60 after the polishing: grinding plant
501,607: top lap 505: lower abrasive disk
503,603: the circular load plate 502 of hollow out: abrasive material
606: diamond particle 608: lapping liquid
70: polissoir 701: upper polishing disk
703: polishing load plate 704: lower polishing disk
5041,7021: first surface 5042,7022: second surface
8052: the four surfaces, 8051: the three surfaces
903: the five surfaces 801: diamond cutter
802: laser 803: chemical agent
804: high-speed computing machine numerical control machine 806: cutting wheel
901: diamond wheel
Embodiment
Following embodiment mainly is explanation sapphire material, its manufacture method and working method thereof, and manufacture method of the present invention and working method also can be applicable to other corundum material.Application about sapphire material can be referring to Taiwan number of patent application 100142110 and 100,149,015 two pieces of documents of Taiwan number of patent application.
See also Fig. 2 a, it is the synoptic diagram of the long brilliant equipment of the triumphant formula of first preferred embodiment of the invention.The long brilliant equipment 20 of triumphant formula comprises resistance heater 201, crucible 202, sapphire crystal seed 205, electric current copper ring 206 and thermoscreen 207.The material of resistance heater 201 is tungsten or tungstenalloy, and couples with electric current copper ring 206.Electric current copper ring 206 is applied in electric current so that resistance heater 201 produces heat and heats this crucible 202.These crucible 202 these heats of conduction, and by this heat, melt thing 203 is molten into liquid state.The composition of melt thing 203 is high purity aluminium sesquioxide sapphire raw material.The material of crucible 202 is tungsten, molybdenum alloy or graphite.Sapphire crystal seed 205 is the sapphire crystal seed 205 of axially growing up at a.The long brilliant equipment 20 of triumphant formula is formed on the solid-liquid interface formation 204 between sapphire crystal seed 205 and the melt thing 203.The material of thermoscreen 207 is molybdenum or tungsten, and it avoids this dissipation of heat to keep the temperature of crucible 202 inside in order to isolated this heat.
The method of making sapphire material in first preferred embodiment of the invention is as follows.First aluminium sesquioxide sapphire raw material is placed crucible 202, then will have the axial sapphire crystal seed 205 of a and contact to plant crystal seed with this aluminium sesquioxide sapphire raw material.In the second figure a, a of sapphire crystal seed 205 axially be vertical (perpendicular) axially.Heat this aluminium sesquioxide sapphire raw material to form melt thing 203 or to form melt thing 203 and solid-liquid interface formation 204.Cause thermograde so that melt thing 203 cools off gradually by sapphire crystal seed 205 upwards being drawn to carry gradually; This moment, melt thing 203 can be in the axial crystallization of a of sapphire crystal seed 205 with solid-liquid interface formation 204, and solid-liquid interface formation 204 then forms sapphire crystal 208 after cooling off with melt thing 203.Therefore, shown in Fig. 2 b, it is axial that sapphire crystal 208 also has the axial growth of a.
See also Fig. 2 b, it is the synoptic diagram of sapphire crystal 208 of the present invention.Next, extract sapphire material 209 to carry out follow-up processing from sapphire crystal 208.When extracting, each that utilize according to demand that direction finding instrument (not shown) determines sapphire crystal 208 extracted after axially again.The method of extracting is preferably the mode that drills through (drill) or cutting (cutting off).For example, want to extract columned sapphire material 209, then take out columned sapphire material 209 with the bit drills of hollow cylindrical, if will extract the sapphire material 209 of square type column or Polygons column, then can utilize diamond cutter cutting.Sapphire material 209 in a specific axis to being extracted, wherein this specific to be axially perpendicular to a axial.Take Fig. 2 b as example, in a preferred embodiment, axially extract this sapphire material 209 from its C or the M of sapphire crystal 208, and that C or M axially are (horizontal) of level is axial.
In another preferred embodiment, for meeting preferably light transmission features, this specific axis to scope in the c-axis of this sapphire crystal 208 scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal 208 scope to inclined to one side m axial angle-2.5 °～2.5 °.The sapphire material 209 that extracts in above-mentioned angular range has preferably light transmission.But when when always extracting perpendicular to the axial c-axis of a fully, because the relation of 208 body structures of sapphire crystal will drill through and be not easy with drill bit.So this specific axis is to being preferably at the c-axis of this sapphire crystal to inclined to one side a axial angle-2.5 ° or 2.5 °, and this specific axis is to being preferably at the c-axis of this sapphire crystal to inclined to one side m axial angle-2.5 ° or 2.5 °; Or a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal; Or the m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or axial at the r of this sapphire crystal.Like this, not only drill through than being easier to, and the sapphire material that drills through out also has preferably light transmission.This specific axis to Miller indices comprise: c-axis (0001), a axle
The m axle
Or r axle
See also Fig. 3, it is the synoptic diagram of first preferred embodiment of the invention sapphire material 209 manufacture method.The method includes the steps of: step S201 is inoculated into a melt thing 203 with a sapphire crystal seed 205.Step S202 upwards draws and carries this sapphire crystal seed 205 this melt thing 203 is cooled off gradually, and make this melt thing 203 in the axial crystallization of a of this sapphire crystal seed 205 to form a sapphire crystal 208.Step S203, from a specific axis of this sapphire crystal 208 to extracting this sapphire material 209, wherein this specific a that is axially perpendicular to this sapphire crystal seed 205 is axial.
See also Fig. 4, it is the synoptic diagram of second preferred embodiment of the invention heat exchanging apparatus 30.Heat exchanging apparatus 30 comprises resistance heater 301, crucible 302, sapphire crystal seed 305, current coil 306, thermoscreen 307 and heat exchanger tube 308.Resistance heater 301 couples with current coil 306.Current coil 306 is applied in electric current so that resistance heater 301 produces heat and heats this crucible 302, and this crucible shape can be round, square or Polygons, and the crystal that grows then can form sapphire crystal according to the crucible shape.These crucible 302 these heats of conduction, and by this heat, melt thing 303 is molten into liquid state.The composition of melt thing 303 is aluminium sesquioxide sapphire raw material.Sapphire crystal seed 305 is the sapphire crystal seed 305 of axially growing up at a.Heat exchanging apparatus 30 is formed on the solid-liquid interface formation 304 between sapphire crystal seed 305 and the melt thing 303.
The method of making sapphire material in second preferred embodiment of the invention is as follows.First aluminium sesquioxide sapphire raw material is placed crucible 302, then will have the axial sapphire crystal seed 305 of a and contact to plant crystal seed with this aluminium sesquioxide sapphire raw material.In Fig. 4, a of sapphire crystal seed 305 axially be vertical (perpendicular) axially.Heat this aluminium sesquioxide sapphire raw material to form melt thing 303 or to form melt thing 303 and solid-liquid interface formation 304.There are water coolant or gas in heat exchanger tube 308 inside, by the water coolant in the heat exchanger tube 308 or the circulation of gas, mode with heat exchange is taken the heat in solid-liquid interface formation 304 and the melt thing 303 out of, and can make the from lower to upper gradually cooling of solid-liquid interface formation 304 and melt thing 303; This moment, melt thing 303 can axially come crystallization at a of sapphire crystal seed 305 with solid-liquid interface formation 304, and formed the sapphire crystal 208 shown in Fig. 2 b after solid-liquid interface formation 304 and 303 coolings of melt thing.Therefore, it is axial that sapphire crystal 208 also has a, the shape of sapphire crystal 208 can be changed according to the crucible shape, except circle suggested in invention, also can design the crucible shape according to purposes, crucible also can be square or Polygons crucible, the sapphire crystal of finishing so that finally grow can be grown according to the crucible shape, and can increase the volume utilization of sapphire crystal in follow-up extraction step.Next, extract sapphire material 209 to carry out follow-up processing from sapphire crystal 208.The mode of extracting sapphire crystal 208 in second preferred embodiment of the invention is identical with first preferred embodiment of the invention.
See also Fig. 5, it is the synoptic diagram of second preferred embodiment of the invention sapphire material 209 manufacture method.The method includes the steps of: step S301 is seeded to a melt thing 303 with a sapphire crystal seed 305.Step S302 cools off gradually this melt thing 303 with heat exchange method, and makes this melt thing 303 in the axial crystallization of a of this sapphire crystal seed 305, to form a sapphire crystal 208.Step S303, from a specific axis of this sapphire crystal 208 to extracting this sapphire material 209, wherein this specific a that is axially perpendicular to this sapphire crystal seed 305 is axial.
Axially (0001), a-axially [comprise the crystal axis of this sapphire material 209 to being preferably c-
And
], m-axially [comprises
And
] and r-axially [comprise
And
] one of them, after extracting sapphire material 209, next be the step that it is processed.The step of processing comprises: profile is ground, line is cut the steps such as processing, grinding and polishing, profile cutting, chamfer grinding, plated film and decoration.
See also Fig. 6 a and Fig. 6 b, it cuts the synoptic diagram of processing units 40 for the third preferred embodiment of the invention line.Line is cut processing units 40 and is comprised drive unit 42, and drive unit 42 comprises major trough wheel 44 and one diamond guide wheel group 46.Some diamond lines 48 are surrounded on the drive unit 40, and the spacing between some diamond lines 48 is in the scope of 0.65～1.85mm, so a cutting spacing of this sapphire material 209 is in the scope of 0.65～1.85mm.When to sapphire material 209 cutting, sapphire material 209 is applied in a power F, and this drive unit 42 is carried out an oscillating motion (Rocking) so that this some diamond lines produce a tension force T.The motion that utilizes this tension force T and diamond line is cut this sapphire material 209 and is formed a sapphire substrate 504.After the cutting, a thickness of this sapphire substrate 504 is in the scope of 0.4～1.6mm.
See also Fig. 7 a, it is the synoptic diagram of four preferred embodiment of the invention grinding plant 50.Grinding plant 50 comprises the circular load plate 503 of top lap 501, lower abrasive disk 505 and hollow out.Because the sapphire substrate 504 after the line cutting at a first surface 5041 and a second surface 5042 meeting generation cutting vestiges of its cutting, therefore need to grind and the processing of attenuate.At first, place the circular load plate 503 of hollow out to be fixed sapphire substrate 504, recycling top lap 501 grinds with the rotation of lower abrasive disk 505.The interior outer rim of the circular load plate 503 of hollow out has gear 5031 and meshes with the gear 5011 of top lap 501 inner edges and the gear of lower abrasive disk 505 outer rims, meshes and drive the circular load plate 503 of hollow out by the gear 5011 of top lap 501 inner edges and the gear of lower abrasive disk 505 outer rims; At this moment, can inject an abrasive material 502, grind respectively the first surface 5041 and second surface 5042 of this sapphire substrate 504 with top lap 501, lower abrasive disk 505, wherein this abrasive material 502 is diamond particle.
See also Fig. 7 b, it is the synoptic diagram of another grinding plant 60 of four preferred embodiment of the invention.In another preferred embodiment, grinding plant 60 comprises the circular load plate 603 of hollow out and upper millstone 607.Diamond particle 606 can utilize the mode that electroforming or resin stick together to be fixed in upper millstone 607, during grinding sapphire substrate 504 is fixed on the circular load plate of hollow out 603, and utilizes lapping liquid 608 coolings and lubricated sapphire substrate 504, upper millstone 607 and diamond particle 606.
See also Fig. 8, it is the synoptic diagram of fifth preferred embodiment of the invention polissoir 70.Sapphire substrate 702 surfaces after having ground still have trickle grinding vestige, therefore need to polish processing procedure.Polissoir 70 comprises polishing disk 701, lower polishing disk 704 and polishing load plate 703.At first, the sapphire substrate 702 after having ground is placed on the polishing load plate 703, wherein polish load plate 703 and can be ceramic disc or fiberglass disc.Then will polish load plate 703 and paste or be fixed on the polishing disk 701, simultaneously rubbing paste (liquid) 705 be flow between the sapphire substrate 702 and lower polishing disk 704 after having ground.Upper polishing disk 701 is slowly pressed down and the upper polishing disk 701 of simultaneously rotation and lower polishing disk 704.
Need after single-sided polishing is complete sapphire substrate 702 is turn to the step that another side repeats above-mentioned polishing.By 706 pairs of these first surfaces of polishing fluid 7021 and these second surface 7022 polishings, and after forming respectively 8051 and 1 the 4th surface 8052, one the 3rd surface.As shown in Figure 9, the 3rd surface 8051 all has a planeness and a roughness with the 4th surface 8052, and between the 8051 and the 4th surface 8052, the 3rd surface, have an amounts of thickness variation (Total thickness Variation, TTV) and a bending value.This planeness can be controlled in (1 inch=2.54cm) 0～20 micron scope of per inch, this roughness can be controlled in the scope of 0.2～10 nanometer, this amounts of thickness variation can be controlled in the scope of 0～15 micron of per inch, and this bending value can be controlled in-30～+ 30 microns scope.
See also Fig. 9, it is the synoptic diagram of sixth preferred embodiment of the invention profile cutting.Can cut with a Mechanically programm or a chemical program according to a specified shape through the sapphire substrate 805 after grinding and polishing, wherein this Mechanically programm comprises that this chemical program comprises with this sapphire substrate 805 of a chemical agent 803 etchings with a cutting wheel 806, a high-speed computing machine numerical control machine 804, a laser 802 or a diamond cutter 801 these sapphire substrates 805 of cutting.
See also Figure 10, the synoptic diagram that it grinds for the seventh preferred embodiment of the invention profile.Sapphire substrate 805 after grinding and polishing is through after cutting according to specific profile, and one the 5th surface 903 with jagged edge can form at the thickness direction of sapphire substrate 805.Therefore in Figure 10, utilize a diamond wheel 901 to grind the 5th surface 903 and can eliminate jagged edge.In a preferred embodiment, diamond wheel 901 is shaped as the T-type emery wheel.In another preferred embodiment, diamond wheel 901 can be replaced by according to product demand R-type, C-Type and tack emery wheel.In this processing procedure, the stroke of the action of diamond wheel 901 is by being disposed by the computer digit Profile modeling control simultaneously.Utilize this copying control to do contour grinding and to get various required profile the external form of sapphire substrate 805 on thickness direction.For example, carry out circle, square, Polygons and abnormity and grind, and make the fillet of all kinds of sizes or chamfering etc.Next, can carry out the processing procedure of plated film or decoration.
See also Figure 11, it is the synoptic diagram of sapphire manufacturing of the present invention with the working method flow process.The method includes the steps of: step S401, sapphire is long brilliant.Step S402 extracts sapphire crystal bar or brilliant brick.Step S403, the cutting of multiple line formula diamond.Step S404 grinds and polishing.Step S405, the profile cutting.Step S406, profile is ground.Step S407, plated film and decoration.First preferred embodiment of the invention and the second preferred embodiment all comprise step S401 and step S402, and difference is in making sapphire material 209 with different apparatus and method fors.Third preferred embodiment of the invention comprises step S403.Step S404 is included in the step in the present invention the 4th and the 5th preferred embodiment.The present invention the 6th, seven preferred embodiments comprise respectively step S405 and step S406.Please note that step S401～step S407 can sequentially carry out, because sapphire high rigidity characteristic, two arrows between step S404, step S405 and step S406 represent the order of these steps and can exchange, and can only implement one of them or two step wherein, also can all implement.For example, after the multiple line formula diamond cutting of step S403, can carry out the profile of step S405 and grind, then enter step S407.
Behind completing steps S404, step S405 or step S406, sapphire substrate can be used as transparent sapphire glass.Therefore, follow-up processing can improve for its optical characteristics, such as coating anti reflection layer etc.Before to this sapphire glass coating anti reflection layer, the penetration coefficient of this sapphire glass can reach more than or equal to 85%.
In step S407, this sapphire glass processing is comprised functional plated film and ornamental plated film.This functional plated film comprises this sapphire glass is carried out an antireflection plated film, to promote more than this penetration coefficient to 90%.This ornamental plated film comprises: this sapphire glass is carried out a metal coating, increasing metalluster at this sapphire glass, or this sapphire glass is carried out a printing ink transfer printing.
In Figure 11, sapphire material 209 is begun by long brilliant processing procedure.Step S401, solid-liquid interface formation 204,304 and melt thing 203,303 coolings form sapphire crystal 208, and determine the axial of sapphire crystal 208 by crystal direction finding set (not shown).Step S402 extracts sapphire material 209 from sapphire crystal 208, and it comprises cylindric crystal bar, the brilliant brick of rectangle or the brilliant brick of Polygons.Step S403, sapphire material 209 is carried out the grinding and polishing processing procedure of step S404 after multiple line formula diamond line 48 cuts into sapphire substrate 504.Sapphire substrate 805 after finishing for grinding and polishing cleans and checks, causes the decline of hardness or ultimate compression strength to avoid the 8051 and the 4th surface 8052, the 3rd surface that any hole, hole or defective are arranged.Finish the processing procedure that must carry out to sapphire substrate 805 stress relief after the inspection, then enter step S405 and step S406.In step S405 and step S406, impose the processing procedure of Mechanically programm or chemical program according to demand size and profile, to obtain to conform with the finished product that size design requires.Then enter step S407.In step S407, make the relevant processing procedures such as antireflection plated film or decoration at sapphire substrate 805, at last carry out anneal according to the surface appearance on the sapphire substrate 805 again, and met the requirements with the optics penetration coefficient of confirming sapphire substrate 805 by optical detection and just can be applied on other device, this sapphire substrate 805 just can be used as sapphire glass.
This sapphire glass can be applicable to contact panel, and as the cover glass (cover glass) of contact panel, its hardness and ultimate compression strength with excellence replaces chilled glass.This sapphire glass also can be applicable to the lens protecting mirror of image-taking device.
Embodiment
1. the manufacture method of a sapphire material comprises following steps: a sapphire crystal seed is inoculated into a melt thing.Upwards draw and carry this sapphire crystal seed this melt thing is cooled off gradually, and make this melt thing in the axial crystallization of a of this sapphire crystal seed to form a sapphire crystal.From a specific axis of this sapphire crystal to extracting this sapphire material, wherein this specific a that is axially perpendicular to this sapphire crystal seed is axial.
2. method as described in Example 1, wherein this specific axis to scope in the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °; Or a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal; Or the m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or axial at the r of this sapphire crystal.This specific axis to Miller indices comprise: c-axis (0001), a axle
The m axle
Or r axle
This melt thing comprises the high purity aluminium sesquioxide.This melt thing places a crucible to heat, and this crucible has a shape, and the net shape of this sapphire crystal can be circle, square or Polygons according to the shape of this crucible.The method also comprises following steps: some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group.Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force.Utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
3. such as embodiment 1～2 described method, wherein extract this sapphire material in the mode that drills through or cut.This sapphire material has a body, and this body comprises a right cylinder, a rectangular cylinder or a square cylinder.Make this sapphire material have certain cutting spacing, this cutting spacing is in the scope of 0.65～1.85mm.Have a thickness after this sapphire substrate warp cutting, this thickness is in the scope of 0.4～1.6mm.The method is further comprising the steps of: grind respectively a first surface and a second surface of this sapphire substrate by an abrasive material with abrasive disk up and down, wherein this abrasive material is diamond particle or lapping liquid.By polishing fluid this first surface and this second surface are polished, to form respectively one the 3rd surface and one the 4th surface, wherein the 3rd surface all has a planeness and a roughness with the 4th surface, between the 3rd surface and the 4th surface, have an amounts of thickness variation and a bending value, this planeness is in the scope of 0～20 micron of per inch, this roughness is in the scope of 0.2～10 nanometer, this amounts of thickness variation is in the scope of 0～15 micron of per inch, and this bending value is-30～30 microns scope.Cut this sapphire substrate according to a specified shape with a Mechanically programm or a chemical program, wherein this Mechanically programm comprises with a cutting wheel, a high-speed computing machine numerical control machine, a laser or a diamond cutter and cuts this sapphire substrate, and this chemical program comprises with this sapphire substrate of chemical agent etching.Grind one the 5th surface of this sapphire substrate so that the external form of this sapphire substrate forms fillet or chamfering, to form a sapphire glass, wherein the 5th surface is positioned on the thickness direction of this sapphire substrate.
4. such as embodiment 1～3 described method, wherein this sapphire glass has a penetration coefficient, and this penetration coefficient is more than or equal to 85%.The method is further comprising the steps of: this sapphire glass is carried out a functional plated film or an ornamental plated film.This functional plated film comprises this sapphire glass is carried out an antireflection plated film, to promote more than this penetration coefficient to 90%.This ornamental plated film comprises: this sapphire glass is carried out a metal coating, to increase metalluster at this sapphire glass.This sapphire glass is carried out a printing ink transfer printing.
5. the manufacture method of a sapphire material comprises following steps: a sapphire crystal seed is seeded to a melt thing.With heat exchange method this melt thing is cooled off gradually, and make this melt thing in the axial crystallization of a of this sapphire crystal seed, to form a sapphire crystal.From a specific axis of this sapphire crystal to extracting this sapphire material, wherein this specific a that is axially perpendicular to this sapphire crystal seed is axial.
6. method as described in Example 5, wherein this specific axis to scope in the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °; Or a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal; Or the m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or axial at the r of this sapphire crystal.This specific axis to Miller indices comprise: c-axis (0001), a axle
The m axle
Or r axle
This melt thing comprises the high purity aluminium sesquioxide.This melt thing places a crucible to heat, and this crucible has a shape, and the net shape of this sapphire crystal can be circle, square or Polygons according to the shape of this crucible.The method also comprises following steps: some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group.Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force.Utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
7. such as embodiment 5～6 described methods, wherein to drill through or cutting mode extracts this sapphire material.This sapphire material has a body, and this body comprises a right cylinder, a rectangular parallelepiped or a square.This sapphire material has diamond line cutting spacing, and this cutting spacing is in the scope of 0.65～1.85mm.This sapphire substrate has a thickness, and this thickness is in the scope of 0.4～1.6mm.
8. such as embodiment 5～7 described methods, the method is further comprising the steps of: grind respectively a first surface and a second surface of this sapphire substrate by an abrasive material with abrasive disk up and down, wherein this abrasive material is diamond particle or lapping liquid.By polishing fluid this first surface and this second surface are polished, to form respectively one the 3rd surface and one the 4th surface, wherein the 3rd surface all has a planeness and a roughness with the 4th surface, has an amounts of thickness variation and a bending value between the 3rd surface and the 4th surface.This planeness is in the scope of 0～20 micron of per inch.This roughness is in the scope of 0.2～10 nanometer.This amounts of thickness variation is in the scope of 0～15 micron of per inch.This bending value is-30～30 microns scope.
9. such as embodiment 5～8 described methods, the method is further comprising the steps of: cut this sapphire substrate according to a specified shape with a Mechanically programm or a chemical program.This Mechanically programm comprises with a cutting wheel, a high-speed computing machine numerical control machine, a laser or diamond cutter cuts this sapphire substrate.This chemical program comprises with this sapphire substrate of chemical agent etching.The method is further comprising the steps of: this sapphire substrate has one the 5th surface in the direction of thickness, grinds the 5th surface so that the external form of this sapphire substrate forms fillet or chamfering.
10. such as embodiment 5～9 described methods, wherein this sapphire substrate forms a sapphire glass after grinding through described line cutting, the grinding of described substrate, described polishing, the cutting of described profile or described profile, wherein this sapphire glass has a penetration coefficient, and this penetration coefficient is more than or equal to 85%.The method also comprises: this sapphire glass is carried out a functional plated film or an ornamental plated film.This functional plated film comprises this sapphire glass is carried out an antireflection plated film, to promote more than this penetration coefficient to 90%.This ornamental plated film comprises: this sapphire glass is carried out a metal coating, to increase metalluster at this sapphire glass.This sapphire glass is carried out a printing ink transfer printing.
11. the manufacture method of a corundum material comprises following steps: provide to have the axial corundum crystal of growing up, wherein should grow up axially is that a of this corundum crystal is axial.From a specific axis of this corundum crystal to extracting this corundum material, wherein this specific axis to comprise m axially reach c-axis to, it is axial to a perpendicular to this corundum crystal that this m axially reaches this c-axis.
12. such as embodiment 11 described methods, wherein this corundum crystal comprises a sapphire crystal or a ruby crystal, this corundum material comprises a sapphire material or a ruby material.This specific axis to scope in the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, or in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °; Or a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal; Or the m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or axial at the r of this sapphire crystal.This specific axis to Miller indices comprise: c-axis (0001), a axle
The m axle
Or r axle
The method also comprises following steps: some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group.Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force.Utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
13. a corundum material comprises a corundum crystal, this corundum crystal has one grows up axially, and from a specific axis of this corundum crystal to extracting this corundum material, and wherein this growth axially is that a of this corundum crystal is axial.
14. the manufacture method of the sapphire material of an image-taking device comprises following steps: long brilliant.Extract.Line is cut.Two throwings.Blank is made and plated film.
15. such as embodiment 14 described methods, wherein this sapphire material is preferably axially long brilliant at its a, axially (0001), a-axially [comprise the c-that axially comprises of this sapphire material
And
], m-axially [comprises
And
] and r-axially [comprise
And
] one of them.
16. such as embodiment 14～15 described methods, wherein extract this sapphire material axially be with a of this sapphire material axially vertical axially.
17. such as embodiment 14～16 described methods, the optimized angle that wherein extracts this sapphire material at its c-axis to axially-2.5 ° or 2.5 ° of its a of deflection.
18. such as embodiment 14～17 described methods, the optimized angle that wherein extracts this sapphire material at its c-axis to axially-2.5 ° or 2.5 ° of its m of deflection.
19. such as embodiment 14～16 described methods, wherein extract the optimized angle of this sapphire material and axially be partial to its c-axis to-2.5 ° or 2.5 ° at its a.
20. such as embodiment 14～16 and 19 described methods, wherein extract the optimized angle of this sapphire material and axially be partial to axially-2.5 ° or 2.5 ° of its m at its a.
21. such as embodiment 14～16 described methods, wherein extract the optimized angle of this sapphire material and axially be partial to its c-axis to-2.5 ° or 2.5 ° at its m.
22. such as embodiment 14～16 and 21 described methods, wherein extract the optimized angle of this sapphire material and axially be partial to axially-2.5 ° or 2.5 ° of its a at its m.
23. such as embodiment 14～16 described methods, the optimized angle that wherein extracts this sapphire material is the R axle.
24. such as embodiment 14～23 described methods, wherein this sapphire material has the crystalline structure of monocrystalline.
25. such as embodiment 14～23 described methods, wherein plated film comprises printing ink transfer printing, physical vapor deposition, laser sculpture, mitography or spraying.
26. the manufacture method of a sapphire material comprises following steps: provide to have the axial sapphire crystal of growing up, wherein this growth axially is that a of this sapphire crystal is axial.From a specific axis of this sapphire crystal to extracting this sapphire material, wherein this specific a that is axially perpendicular to this sapphire crystal is axial.
27. a sapphire material comprises a sapphire crystal, this sapphire crystal has one grows up axially, and from a specific axis of this sapphire crystal to extracting this sapphire material, and wherein this growth axially is that a of this sapphire crystal is axial.
In sum, explanation of the present invention and embodiment are disclosed in, but are not to limit the present invention, and those skilled in the art are not breaking away under spirit of the present invention and the scope, should make various changes and modification, it must belong within the covering scope of patent of the present invention.
Claims (13)
1. the manufacture method of a sapphire material is characterized in that, the method includes the steps of:
One sapphire crystal seed is inoculated into a melt thing;
Upwards draw carry this sapphire crystal seed and this melt thing cause thermograde so that its cool off gradually and make this melt thing in the axial crystallization of a of this sapphire crystal seed to form a sapphire crystal; And
From a specific axis of this sapphire crystal to extracting this sapphire material.
2. the manufacture method of sapphire material as claimed in claim 1 is characterized in that:
This specific axis to scope comprise:
In the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °;
The a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal;
The m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or
R at this sapphire crystal is axial;
This specific axis to Miller indices comprise:
C-axis (0001);
The a axle
The m axle
Or
The r axle
This melt thing comprises the high purity aluminium sesquioxide;
This melt thing places a crucible to heat, and this crucible has a shape, and the net shape of this sapphire crystal can be circle, square or Polygons according to the shape of this crucible;
The method also comprises following steps:
Some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group;
Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force; And utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
3. the manufacture method of sapphire material as claimed in claim 2 is characterized in that:
Extract this sapphire material in the mode that drills through or cut;
This sapphire material has a body, and this body comprises a right cylinder, a rectangular cylinder or a square cylinder;
This sapphire material has a cutting spacing, and this cutting spacing is in the scope of 0.65～1.85mm;
This sapphire substrate has a thickness, and this thickness is in the scope of 0.4～1.6mm; And
The method is further comprising the steps of:
Grind respectively a first surface and a second surface of this sapphire substrate by an abrasive material with abrasive disk up and down, wherein this abrasive material is diamond particle or lapping liquid;
By polishing fluid this first surface and this second surface are polished, to form respectively one the 3rd surface and one the 4th surface, wherein the 3rd surface all has a planeness and a roughness with the 4th surface, between the 3rd surface and the 4th surface, have an amounts of thickness variation and a bending value, this planeness is in the scope of 0～20 micron of per inch, this surfaceness is in the scope of 0.2～10 nanometer, this amounts of thickness variation is in the scope of 0～15 micron of per inch, and this bending value is-30～30 microns scope;
Cut this sapphire substrate according to a specified shape with a Mechanically programm or a chemical program, wherein this Mechanically programm comprises with a cutting wheel, a high-speed computing machine numerical control machine, a laser or a diamond cutter and cuts this sapphire substrate, and this chemical program comprises with this sapphire substrate of chemical agent etching; And
Grind one the 5th surface of this sapphire substrate so that the external form of this sapphire substrate forms fillet or chamfering, to form a sapphire glass, wherein the 5th surface is positioned on the thickness direction of this sapphire substrate.
4. the manufacture method of sapphire material as claimed in claim 3 is characterized in that:
This sapphire glass has a penetration coefficient, and this penetration coefficient is more than or equal to 85%;
The method is further comprising the steps of:
This sapphire glass is carried out a functional plated film or an ornamental plated film;
This functional plated film comprises this sapphire glass is carried out an antireflection plated film, to promote more than its penetration coefficient to 90%; And
This ornamental plated film comprises:
This sapphire glass is carried out a metal coating, to increase metalluster at this sapphire glass; And
This sapphire glass is carried out a printing ink transfer printing.
5. the manufacture method of a sapphire material is characterized in that, the method includes the steps of:
One sapphire crystal seed is seeded to a melt thing;
With heat exchange method this melt thing is cooled off gradually, and make this melt thing in the axial crystallization of a of this sapphire crystal seed, to form a sapphire crystal; And
From a specific axis of this sapphire crystal to extracting this sapphire material.
6. the manufacture method of sapphire material as claimed in claim 5 is characterized in that:
This specific axis to scope comprise:
In the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °;
The a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal;
The m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or
R at this sapphire crystal is axial;
This specific axis to Miller indices comprise:
C-axis (0001);
The a axle
The m axle
Or
The r axle
This melt thing comprises the high purity aluminium sesquioxide;
This melt thing places a crucible to heat, and this crucible has a shape, and the net shape of this sapphire crystal can be circle, square or Polygons according to the shape of this crucible;
The method also comprises following steps:
The line cutting:
Some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group;
Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force; And
Utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
7. the manufacture method of sapphire material as claimed in claim 6 is characterized in that:
To drill through or cutting mode extracts this sapphire material;
This sapphire material has a body, and this body comprises a right cylinder, a rectangular parallelepiped or a square;
This sapphire material has a cutting spacing, and this cutting spacing is in the scope of 0.65～1.85mm;
This sapphire substrate has a thickness, and this thickness is in the scope of 0.4～1.6mm;
The method is further comprising the steps of:
Grind: grind respectively a first surface and a second surface of this sapphire substrate by an abrasive material with abrasive disk up and down, wherein this abrasive material is diamond particle or lapping liquid; And
Polishing: this first surface and this second surface are polished by polishing fluid, to form respectively one the 3rd surface and one the 4th surface, wherein the 3rd surface all has a planeness and a roughness with the 4th surface, has an amounts of thickness variation and a bending value between the 3rd surface and the 4th surface;
This planeness is in the scope of 0～20 micron of per inch;
This roughness is in 0.2～10 scope of rice how;
This amounts of thickness variation is in the scope of 0～15 micron of per inch;
This bending value is-30～30 microns scope;
The method is further comprising the steps of:
Profile cutting: cut this sapphire substrate with a Mechanically programm or a chemical program according to a specified shape;
This Mechanically programm comprises with a cutting wheel, a high-speed computing machine numerical control machine, a laser or diamond cutter cuts this sapphire substrate;
This chemical program comprises with this sapphire substrate of chemical agent etching; And
The method also comprises following steps:
Profile is ground: this indigo plant substrate has one the 5th surface in the direction of thickness, grinds the 5th surface so that the external form of this sapphire substrate forms fillet or chamfering.
8. the manufacture method of sapphire material as claimed in claim 7 is characterized in that:
This sapphire substrate forms a sapphire glass after grinding through described line cutting, the grinding of described substrate, described polishing, the cutting of described profile or described profile, and wherein this sapphire glass has a penetration coefficient, and this penetration coefficient is more than or equal to 85%;
The method also comprises:
This sapphire glass is carried out a functional plated film or an ornamental plated film;
This functional plated film comprises this sapphire glass is carried out an antireflection plated film, to promote more than its penetration coefficient to 90%; And
This ornamental plated film comprises:
This sapphire glass is carried out a metal coating, to increase metalluster at this sapphire glass; And
This sapphire glass is carried out a printing ink transfer printing.
9. the manufacture method of a sapphire material is characterized in that, the method includes the steps of:
Provide to have the axial sapphire crystal of growing up, wherein this growth axially is that a of this sapphire crystal is axial; And
From a specific axis of this sapphire crystal to extracting this sapphire material.
10. the manufacture method of a corundum material is characterized in that, the method includes the steps of:
Provide to have the axial sapphire crystal of growing up, wherein this growth axially is that a of this sapphire crystal is axial; And
From a specific axis of this corundum crystal to extracting this corundum material.
11. the manufacture method of corundum material as claimed in claim 10 is characterized in that:
This corundum crystal is this sapphire crystal or a ruby crystal, and this corundum material comprises a sapphire material or a ruby material;
This specific axis to scope comprise:
In the c-axis of this sapphire crystal scope to inclined to one side a axial angle-2.5 °～2.5 °, and in the c-axis of this sapphire crystal scope to inclined to one side m axial angle-2.5 °～2.5 °;
The a of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of m axial angle-2.5 °～2.5 ° partially of a of this sapphire crystal;
The m of this sapphire crystal axially partially c-axis to the scope of angle-2.5 °～2.5 °, and in the axial scope of a axial angle-2.5 °～2.5 ° partially of the m of this sapphire crystal; Or
R at this sapphire crystal is axial;
This specific axis to Miller indices comprise:
C-axis (0001);
The a axle
The m axle
Or
The r axle
This corundum crystal is to be formed by melt thing cooling;
This melt thing comprises the high purity aluminium sesquioxide;
This melt thing places a crucible to heat, and this crucible has a shape, and the net shape of this sapphire crystal can be circle, square or Polygons according to the shape of this crucible;
The method also comprises following steps:
Some diamond wire loops are around on the drive unit, and this drive unit comprises major trough wheel and a diamond guide wheel group;
Make this drive unit carry out an oscillating motion so that these some diamond lines produce a tension force; And
Utilize this tension force that this sapphire material cutting is formed a sapphire substrate.
12. a sapphire material is characterized in that, this material comprises:
One sapphire crystal has one and grows up axially, and from a specific axis of this sapphire crystal to extracting this sapphire material, and wherein this growth axially is that a of this sapphire crystal is axial.
13. a corundum material is characterized in that, this material comprises:
One corundum crystal has one and grows up axially, and from a specific axis of this sapphire crystal to extracting this corundum material, and wherein this growth axially is that a of this corundum crystal is axial.
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| CN103698824A (en) * | 2013-12-27 | 2014-04-02 | 贵州蓝科睿思技术研发中心 | Coated sapphire cover plate and processing method thereof |
| CN103698824B (en) * | 2013-12-27 | 2015-11-18 | 贵州蓝科睿思技术研发中心 | A kind of sapphire coated cover-plate and job operation thereof |
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| CN104669454A (en) * | 2015-02-11 | 2015-06-03 | 浙江星星瑞金科技股份有限公司 | Processing method for sapphire mobile phone window protection screen with holes |
| CN104669454B (en) * | 2015-02-11 | 2016-11-30 | 浙江星星科技股份有限公司 | A kind of processing method of Sapphire mobile phone windows be protected screen with holes |
| CN105154968A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method for sapphire LED filament substrate |
| CN105160286A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Preparation method of sapphire fingerprint identification panel |
| CN105171583A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Preparing method for sapphire touch screen panel |
| CN105183206A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Production method of sapphire fingerprint identification panel |
| CN105183207A (en) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | Manufacturing method of sapphire borderless touch screen panel |
| CN105150031A (en) * | 2015-06-18 | 2015-12-16 | 江苏苏创光学器材有限公司 | Production method for sapphire frameless touch screen panel |
| CN107305920A (en) * | 2016-04-20 | 2017-10-31 | 晶元光电股份有限公司 | Substrate wafer and method for manufacturing group III nitride semiconductor device |
| CN107305920B (en) * | 2016-04-20 | 2020-04-07 | 晶元光电股份有限公司 | Substrate wafer and method for manufacturing group III nitride semiconductor device |
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