CN103350982B - A kind of preparation method of micro-channel mold - Google Patents
A kind of preparation method of micro-channel mold Download PDFInfo
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- CN103350982B CN103350982B CN201310226365.1A CN201310226365A CN103350982B CN 103350982 B CN103350982 B CN 103350982B CN 201310226365 A CN201310226365 A CN 201310226365A CN 103350982 B CN103350982 B CN 103350982B
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Abstract
A preparation method for micro-channel mold, first makes fluid channel glass mask plate; Cleaning and baking silicon wafer substrate; Beach SU8-2025 photoresist on the burnishing surface of silicon wafer substrate; Front baking photoresist; Photolithographic exposure is carried out to the photoresist in silicon wafer substrate; Rear baking is carried out to the photoresist after photolithographic exposure; SU8 developer solution is adopted to develop to photoresist silicon wafer substrate; Beach SU8-2025 photoresist front baking again on the burnishing surface of silicon chip; Alignment exposure is carried out to the photoresist in silicon wafer substrate; Rear baking is carried out to the photoresist after alignment exposure; SU8 developer solution is adopted to develop to the silicon wafer substrate after alignment exposure; Fluid channel on cleaning silicon chip substrate die; Fluid channel in silicon wafer substrate mold is detected.
Description
1, art
The invention belongs to micro-nano manufacturing technology field, relate to a kind of preparation method of micro-channel mold.
2, background technology
It is a problem being worth research that fluid flows in microchannel, but the selection of the preparation method of fluid channel model is improper, causes experimental result to flow with actual fluid and produces very large flow rate error.
3, summary of the invention
In order to improve making quality and the efficiency of fluid channel, the present invention proposes a kind of preparation method of micro-channel mold.
In order to achieve the above object, the technical solution used in the present invention is:
1) fluid channel glass mask plate is first made;
2) cleaning and baking silicon wafer substrate;
3) beach SU8-2025 photoresist on the burnishing surface of silicon wafer substrate;
4) front baking photoresist;
5) photolithographic exposure is carried out to the photoresist in silicon wafer substrate;
6) rear baking is carried out to the photoresist after photolithographic exposure;
7) SU8 developer solution is adopted to develop to photoresist silicon wafer substrate;
8) beach SU8-2025 photoresist front baking again on the burnishing surface of silicon chip;
9) alignment exposure is carried out to the photoresist in silicon wafer substrate;
10) rear baking is carried out to the photoresist after alignment exposure;
11) SU8 developer solution is adopted to develop to the silicon wafer substrate after alignment exposure;
12) fluid channel on cleaning silicon chip substrate die;
13) fluid channel in silicon wafer substrate mold is detected.
Its concrete step is as follows:
The first step, the making of fluid channel mask plate
According to designing requirement, first by the quartz glass of high-cleanness, high, high-flatness, plate one deck chromium, chromium covers one deck anti-reflective material again, topmost coating one deck photoresists; Again by pattern generator by the selective photoresists being exposed on chromium plate being formed required layout patterns, the making of the fluid channel mask plate that removed photoresist by development, burn into;
Second step, cleaning silicon chip substrate
According to designing requirement, Zhejiang Li Jing Co., Ltd 2 cun of single-sided polishing silicon chips are adopted to be the substrate of mould, with acetone, silicon chip surface is cleaned, re-use KH3200DB numerical control supersonic machine and ultrasonic process is carried out to silicon chip, hyperacoustic acoustic energy imports solution into, the pollution on slice, thin piece is washed off by cavitation effect, remove and be less than 1 micron particles and frequency can be brought up to ultra-high frequency band, cleaning performance is better, after plasma water cleaning, employing compressed air dries up, and cleaning silicon chip substrate object is the adhesiveness increasing wafer substrate and photoresist;
3rd step, beach SU8-2025 photoresist on silicon chip
That photoresist adopts is the SU8-2025 of Microlithography Chemical company of the U.S., the method of photoresist rotary coating is applicable to the thickness of less than 300 microns usually, the design thickness of this fluid channel is 400 microns, the process of spin coating can not realize, can adopt the method for beach, the leveling ability by 8U8-2025 photoresist self obtains the glued membrane being satisfied with flat surface;
4th step, front baking SU8-2025 photoresist
During front baking, the equipment used is EH2013 micro-control numerical monitor, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the process of stepped intensification and Temperature fall cooling, namely 65 ° time stop 30 minutes, stop 4 hours when 95 °, naturally cool with relief silicon wafer substrate;
5th step, photoetching
Use American AB M, inc. the double-sided laser aligning litho machine of company exposes the SU8-2025 photoresist in silicon wafer substrate, according to designing requirement, this time for exposure is 400 seconds, now, light trigger absorb photons in photoresist there occurs photochemical reaction, generates a kind of strong acid, and its effect is the generation promoting cross-linking reaction in middle baking process as acid catalyst;
6th step, the SU8-2025 photoresist after rear baking exposure
During rear baking, the equipment used is EH2013 micro-control numerical monitor drying glue platform, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the method for stepped intensification and Temperature fall cooling, 65 ° time, stop 20 minutes, 95 ° time, stop 2 hours, naturally cool to room temperature with relief silicon wafer substrate at EH2013 micro-control numerical monitor drying glue platform;
7th step, development
SU8-2025 photoresist silicon wafer substrate after rear baking is soaked in SU8 developer solution, and keep 20 minutes, owing to producing a kind of strong acid after photoetching in SU8-2025, and just containing strong acid in the photoresist only having exposure area, unexposed region does not then have this strong acid, in middle baking process, exposure area is under the catalytic action of strong acid, molecule occurs crosslinked, define the fine and close cross-linked network being insoluble to SU8 developer solution, and without the region exposed, photoresist is cross-linked, then be dissolved in developer solution, therefore the upper figure of mask plate is defined after development,
8th step, again beach SU8-2025 photoresist front baking
9th step, alignment
Tenth step, again dries afterwards and develops
11 step, the detection of micro-channel mold
Adopt confocal laser microscope to carry out micro-channel mold detection, the data of measurement and the data of designing requirement are contrasted, determines the reasonability of the manufacture craft of micro-channel mold.
4, accompanying drawing explanation
Fig. 1 is Technology Roadmap of the present invention;
5, detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
With reference to figure 1, process of the present invention is as follows:
(1) fluid channel glass mask plate is first made;
(2) cleaning and baking silicon wafer substrate;
(3) beach SU8-2025 photoresist on the burnishing surface of silicon wafer substrate;
(4) front baking photoresist;
(5) photolithographic exposure is carried out to the photoresist in silicon wafer substrate;
(6) rear baking is carried out to the photoresist after photolithographic exposure;
(7) SU8 developer solution is adopted to develop to photoresist silicon wafer substrate;
(8) beach SU8-2025 photoresist front baking again on the burnishing surface of silicon chip;
(9) alignment exposure is carried out to the photoresist in silicon wafer substrate;
(10) rear baking is carried out to the photoresist after alignment exposure;
(11) SU8 developer solution is adopted to develop to the silicon wafer substrate after alignment exposure;
(12) fluid channel on cleaning silicon chip substrate die;
(13) fluid channel in silicon wafer substrate mold is detected.
Its concrete step is as follows:
The first step, the making of fluid channel mask plate
According to designing requirement, first by the quartz glass of high-cleanness, high, high-flatness, plate one deck chromium, chromium covers one deck anti-reflective material again, topmost coating one deck photoresists; Again by pattern generator by the selective photoresists being exposed on chromium plate being formed required layout patterns, the making of the fluid channel mask plate that removed photoresist by development, burn into;
Second step, cleaning silicon chip substrate
According to designing requirement, Zhejiang Li Jing Co., Ltd 2 cun of single-sided polishing silicon chips are adopted to be the substrate of mould, with acetone, silicon chip surface is cleaned, re-use KH3200DB numerical control supersonic machine and ultrasonic process is carried out to silicon chip, hyperacoustic acoustic energy imports solution into, the pollution on slice, thin piece is washed off by cavitation effect, remove and be less than 1 micron particles and frequency can be brought up to ultra-high frequency band, cleaning performance is better, after plasma water cleaning, employing compressed air dries up, and cleaning silicon chip substrate object is the adhesiveness increasing wafer substrate and photoresist;
3rd step, beach SU8-2025 photoresist on silicon chip
That photoresist adopts is the SU8-2025 of Microlithography Chemical company of the U.S., the method of photoresist rotary coating is applicable to the thickness of less than 300 microns usually, the design thickness of this fluid channel is 400 microns, the process of spin coating can not realize, can adopt the method for beach, the leveling ability by SU8-2025 photoresist self obtains the glued membrane being satisfied with flat surface;
4th step, front baking SU8-2025 photoresist
During front baking, the equipment used is EH2013 micro-control numerical monitor, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the process of stepped intensification and Temperature fall cooling, namely 65 ° time stop 30 minutes, stop 4 hours when 95 °, naturally cool with relief silicon wafer substrate;
5th step, photoetching
Use American AB M, inc. the double-sided laser aligning litho machine of company exposes the SU8-2025 photoresist in silicon wafer substrate, according to designing requirement, this time for exposure is 400 seconds, now, light trigger absorb photons in photoresist there occurs photochemical reaction, generates a kind of strong acid, and its effect is the generation promoting cross-linking reaction in middle baking process as acid catalyst;
6th step, the SU8-2025 photoresist after rear baking exposure
During rear baking, the equipment used is EH2013 micro-control numerical monitor drying glue platform, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the method for stepped intensification and Temperature fall cooling, 65 ° time, stop 20 minutes, 95 ° time, stop 2 hours, naturally cool to room temperature with relief silicon wafer substrate at EH2013 micro-control numerical monitor drying glue platform;
7th step, development
SU8-2025 photoresist silicon wafer substrate after rear baking is soaked in SU8 developer solution, and keep 20 minutes, owing to producing a kind of strong acid after photoetching in SU8-2025, and just containing strong acid in the photoresist only having exposure area, unexposed region does not then have this strong acid, in middle baking process, exposure area is under the catalytic action of strong acid, molecule occurs crosslinked, define the fine and close cross-linked network being insoluble to SU8 developer solution, and without the region exposed, photoresist is cross-linked, then be dissolved in developer solution, therefore the upper figure of mask plate is defined after development,
8th step, again beach SU8-2025 photoresist front baking
9th step, alignment
Tenth step, again dries afterwards and develops
11 step, the detection of micro-channel mold
Adopt confocal laser microscope to carry out micro-channel mold detection, the data of measurement and the data of designing requirement are contrasted, determines the reasonability of the manufacture craft of micro-channel mold.
Claims (1)
1. a preparation method for micro-channel mold, is characterized in that:
1) fluid channel glass mask plate is first made;
According to designing requirement, first by the quartz glass of high-cleanness, high, high-flatness, plate one deck chromium, chromium covers one deck anti-reflective material again, topmost coating one deck photoresists; Again by pattern generator by the selective photoresists being exposed on chromium plate being formed required layout patterns, the making of the fluid channel mask plate that removed photoresist by development, burn into;
2) cleaning and baking silicon wafer substrate;
According to designing requirement, Zhejiang Li Jing Co., Ltd 2 cun of single-sided polishing silicon chips are adopted to be the substrate of mould, with acetone, silicon chip surface is cleaned, re-use KH3200DB numerical control supersonic machine and ultrasonic process is carried out to silicon chip, hyperacoustic acoustic energy imports solution into, the pollution on slice, thin piece is washed off by cavitation effect, remove and be less than 1 micron particles and frequency can be brought up to ultra-high frequency band, cleaning performance is better, after plasma water cleaning, employing compressed air dries up, and cleaning silicon chip substrate object is the adhesiveness increasing wafer substrate and photoresist;
3) beach SU8-2025 photoresist on the burnishing surface of silicon wafer substrate;
That photoresist adopts is the SU8-2025 of Microlithography Chemical company of the U.S., the method of photoresist rotary coating is applicable to the thickness of less than 300 microns usually, the design thickness of this fluid channel is 400 microns, the process of spin coating can not realize, adopt the method for beach, the leveling ability by SU8-2025 photoresist self obtains the glued membrane being satisfied with flat surface;
4) front baking SU8-2025 photoresist;
During front baking, the equipment used is EH2013 micro-control numerical monitor, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the process of stepped intensification and Temperature fall cooling, namely 65 ° time stop 30 minutes, stop 4 hours when 95 °, naturally cool with relief silicon wafer substrate;
5) photolithographic exposure is carried out to the photoresist in silicon wafer substrate;
Use American AB M, inc. the double-sided laser aligning litho machine of company exposes the SU8-2025 photoresist in silicon wafer substrate, according to designing requirement, this time for exposure is 400 seconds, now, light trigger absorb photons in photoresist there occurs photochemical reaction, generates a kind of strong acid, and its effect is the generation promoting cross-linking reaction in rear baking process as acid catalyst;
6) rear baking is carried out to the photoresist after photolithographic exposure;
During rear baking, the equipment used is EH2013 micro-control numerical monitor drying glue platform, during operation, the silicon wafer substrate using 4 pawl silicon chip tweezers beach to be crossed SU8-2025 photoresist moves on on electric hot plate, adopt the method for stepped intensification and Temperature fall cooling, 65 ° time, stop 20 minutes, 95 ° time, stop 2 hours, naturally cool to room temperature with relief silicon wafer substrate at EH2013 micro-control numerical monitor drying glue platform;
7) SU8 developer solution is adopted to develop to photoresist silicon wafer substrate;
SU8-2025 photoresist silicon wafer substrate after rear baking is soaked in SU8 developer solution, and keep 20 minutes, owing to producing a kind of strong acid after photoetching in SU8-2025, and just containing strong acid in the photoresist only having exposure area, unexposed region does not then have this strong acid, in rear baking process, exposure area is under the catalytic action of strong acid, molecule occurs crosslinked, define the fine and close cross-linked network being insoluble to SU8 developer solution, and without the region exposed, photoresist is cross-linked, then be dissolved in developer solution, therefore the upper figure of mask plate is defined after development,
8) beach SU8-2025 photoresist front baking again on the burnishing surface of silicon chip;
9) alignment exposure is carried out to the photoresist in silicon wafer substrate;
10) rear baking is carried out to the photoresist after alignment exposure;
11) SU8 developer solution is adopted to develop to the silicon wafer substrate after alignment exposure;
12) fluid channel on cleaning silicon chip substrate die;
13) fluid channel in silicon wafer substrate mold is detected;
Adopt confocal laser microscope to carry out micro-channel mold detection, the data of measurement and the data of designing requirement are contrasted, determines the reasonability of the manufacture craft of micro-channel mold.
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| CN104190482B (en) * | 2014-08-21 | 2015-10-07 | 四川大学 | Take photosensitive dry film as the method that etching mask makes glass microfluidic devices |
| CN105036061B (en) * | 2015-07-01 | 2017-06-23 | 北京工业大学 | The preparation method of the microchannel of lower wall surface indent |
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| CN111250177B (en) * | 2018-11-30 | 2022-06-24 | 山东大学 | Biomolecule detection method |
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| CN115414971B (en) * | 2022-08-03 | 2023-11-17 | 南方科技大学 | Preparation method of micro-flow control chip and micro-flow control chip |
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