CN103308752A - High voltage detection circuit and radio frequency identification label chip using high voltage detection circuit - Google Patents
High voltage detection circuit and radio frequency identification label chip using high voltage detection circuit Download PDFInfo
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- CN103308752A CN103308752A CN2012100606385A CN201210060638A CN103308752A CN 103308752 A CN103308752 A CN 103308752A CN 2012100606385 A CN2012100606385 A CN 2012100606385A CN 201210060638 A CN201210060638 A CN 201210060638A CN 103308752 A CN103308752 A CN 103308752A
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Abstract
The invention provides a high voltage detection circuit and a radio frequency identification label chip using the high voltage detection circuit, and belongs to the field of a Radio Frequency Identification (RFID) technology. The high voltage detection circuit is used for detecting a high voltage signal in the radio frequency identification label chip. The high voltage detection circuit comprises a capacitive voltage dividing module (110), a voltage-current conversion module (120), a current source (130) and a current size control module (140). A higher high voltage signal is converted into a lower low voltage signal via the capacitive voltage dividing module, and the low voltage signal is further converted into a current signal via the voltage-current conversion module. A current comparison manner is adopted to detect. The high voltage detection circuit has characteristics of being low in power consumption, high in detection precision and flexible and adjustable.
Description
Technical field
The invention belongs to radio-frequency (RF) identification (Radio Frequency Identification, RFID) technical field, the RFID label chip that relates to employed high-voltage detecting circuit in the RFID label chip and comprise this high-voltage detecting circuit.
Background technology
In the RFID label chip, usually need to use to be higher than normal power voltage (V
Dd) high pressure realize some circuit function, for example, in the write operation process of RFID, need to non-volatile scratch pad memory (for example, EEPROM) carry out write operation, this moment need high pressure to realize.The 3-10 that this high pressure is generally normal voltage (is 3-10V doubly
Dd), for example greater than 10V.Normally, all there is the high-voltage detecting circuit that this high-voltage signal is carried out voltage detecting in the RFID label chip.
The degree of accuracy of this high-voltage signal is extremely important for the work of RFID label chip, and for example, in the ablation process of data, the voltage accuracy of high-voltage signal all has material impact to indices such as the accuracy of data writing, retention time, erasable number of times.Simultaneously, the RFID label chip is constantly pursued the characteristic of low-power consumption in design is used.Therefore, industry is pursued the high-precision while of high-voltage detecting circuit, also must satisfy the requirement of low-power consumption.
In the high-voltage detecting circuit that uses in the RFID label chip of prior art, several methods for designing below main the use:
(1) plants, and adopts the electric resistance partial pressure principle that high-voltage signal to be detected is carried out dividing potential drop, obtains a lower voltage V
ShareUse simultaneously band gap reference (bandgap) to produce a reference voltage V
BgAgain by voltage comparator to V
ShareAnd V
BgCompare, to determine whether this high-voltage signal reaches target voltage values.
(2) plants, and adopts the electric resistance partial pressure principle that high-voltage signal to be detected is carried out dividing potential drop, obtains a lower voltage V
ShareUtilize the threshold level of phase inverter to detect the low pressure V that gets through resistance
Share
(3) plants, and directly uses the reversal of diode, and the characteristic of utilizing diode reverse breakdown near the breakdown reverse voltage of diode, for example, can be used the method for the high pressure write signal of EEPROM with the high pressure clamper.
But above several existing methods for designing all have following shortcoming:
(1) (one) plants, and electric resistance partial pressure needs electric current, if resistance is too little, electric current can be very large, if resistance is very large, needs very large tracts of land; If the employing high resistance measurement, technique also needs extra-pay when making, and preparation cost is high; In addition, need band gap reference to produce reference voltage, in the design of RFID label chip, in order to reduce power consumption, hope can be without band gap reference; Voltage comparator adopts difference type calibration circuit (regulator) usually, if working current is too little, reaction sensitivity and operating rate all can descend thereupon.Therefore, (one) although kind high-voltage detecting circuit precision is higher, and the area of high-voltage detecting circuit is large, power consumption is large.
(2) (two) plant, same, adopt the method for electric resistance partial pressure to have the shortcoming the same with (one) kind; In addition, simplified circuit, reduced power consumption although do detection with the threshold level of phase inverter, precision is very low, affected by process deviation and mains fluctuations very large.Therefore, (two) although kind high-voltage detecting circuit power consumption meets the demands, and the area of high-voltage detecting circuit is large, low precision.
(3) (three) plant, and the large electric current when utilizing diode reverse breakdown is as high-voltage load, and near reverse breakdown point, its range of application is very limited with the high pressure clamper.At first its current drain is very large; Next only has a reverse breakdown point, and when being lower than this breakdown point, this high-voltage detecting circuit is inoperative; The 3rd, the reverse breakdown point is not a desirable point, its inverse current and reverse voltage have a funtcional relationship, this is basic load and the load current that do not have other to approach with it with regard to the reverse breakdown current that requires diode, and the confession electric current ability of the generator of the high-voltage signal that detects (such as charge pump) relies on reverse breakdown current to carry out the reasonable realization of purpose ability of clamper far below the reverse breakdown current of diode.
In view of this, be necessary to propose a kind of novel high-voltage detecting circuit that is used for the RFID label chip.
Summary of the invention
The object of the invention is, proposes a kind of low-power consumption, high-precision high-voltage detecting circuit.
For realizing above purpose or other purposes, the invention provides following technical scheme.
According to an aspect of of the present present invention, a kind of high-voltage detecting circuit is provided, be used at radio frequency identification label chip high-voltage signal being detected, this high-voltage detecting circuit comprises:
Capacitance partial pressure module (110) is used for described high-voltage signal is carried out dividing potential drop to export relatively low second voltage signal (Vshare);
Voltage-current conversion module (120) is used for described second voltage signal (Vshare) correspondingly is converted to the first electric current (I
1);
Current source (130), it is used for providing reference current (I_bias); And
Size of current control module (140), its based on described reference current (I_bias) in proportion adjustable ground export the second electric current (I
2);
Wherein, described the first electric current (I
1) and described the second electric current (I
2) compare to export the testing result of the described high-voltage signal of reflection.
According to the high-voltage detecting circuit of one embodiment of the invention, wherein, described second voltage signal is less than or equal to the normal power voltage (V of described radio frequency identification label chip
Dd).
In one example, the voltage swing of described second voltage signal is 0.1 times of voltage swing of described high-voltage signal.
According to the high-voltage detecting circuit of further embodiment of this invention, wherein, described size of current control module (140) uses current mirror to produce the second electric current (I that is multiple times than described reference current (I_bias) with mirror image
2).
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, size of current control selects signal to input to described size of current control module (140), described the second electric current (I
2) the size of current control that accessed to described size of current control module (140) of the multiple of relatively described reference current (I_bias) selects signal controlling.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, the output terminal of the output terminal of described size of current control module (140) and described Voltage-current conversion module (120) couples; Normal power voltage (the V of described radio frequency identification label chip
Dd), described size of current control module (140), described Voltage-current conversion module (120) in turn form the loop with earth terminal.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, described high-voltage detecting circuit also comprises logic module output (150), the voltage swing that couples point (A) between described logic module output (150) detection described Voltage-current conversion module (120) and the size of current control module (140) is with the output logic level, and described logic level reflects the testing result of described high-voltage signal.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, described the first electric current (I
1) less than described the second electric current (I
2) time, described logic level is high level; Described the first electric current (I
1) more than or equal to described the second electric current (I
2) time, described logic level is low level.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, described logic module output (150) output high level signal is used for described logic level is carried out signal shaping output.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, the voltage range of described high-voltage signal is greater than described normal power voltage (V
Dd) and be less than or equal to described normal power voltage (V
Dd) 10 times.
In the high-voltage detecting circuit of described arbitrary embodiment before, preferably, the capacitance partial pressure module is used a plurality of mos capacitances that are connected in series.
According to another aspect of the present invention, a kind of RFID label chip is provided, it comprises any one high-voltage detecting circuit that the above reaches.
Technique effect of the present invention is, by the capacitance partial pressure module higher high-voltage signal is converted to lower low-voltage signal, and then this low-voltage signal is converted to current signal, further adopt current ratio mode to detect, therefore, on the one hand, current signal is more accurate, be not subject to the factor interference such as electric capacity, the degree of accuracy of detection is higher; On the other hand, only at V
Dd, produce power consumption on the loop between size of current control module 140, Voltage-current conversion module 120 and the earth terminal, low in energy consumption; Again on the one hand, compare current signal I
2Accurately adjustable, can control flexibly, high-voltage detecting circuit is applied widely.
Description of drawings
From following detailed description by reference to the accompanying drawings, will make above and other purpose of the present invention and advantage more fully clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the modular structure schematic diagram according to the high-voltage detecting circuit of one embodiment of the invention.
Fig. 2 is the physical circuit embodiment schematic diagram of capacitance partial pressure module shown in Figure 1.
Embodiment
The below introduces is a plurality of some in may embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Easily understand, according to technical scheme of the present invention, do not changing under the connotation of the present invention other implementations that one of ordinary skill in the art can propose mutually to replace.Therefore, following embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or be considered as restriction or restriction to technical solution of the present invention.
In the following description, clear and simple and clear for what describe, a plurality of parts of all shown in the figure are not described.Provide the disclosure that can realize fully of the present invention shown in the drawings of a plurality of parts for those of ordinary skills.To those skilled in the art, it all is familiar and obvious being permitted multipart operation.
Figure 1 shows that the modular structure schematic diagram according to the high-voltage detecting circuit of one embodiment of the invention.High-voltage detecting circuit 10 uses in the RFID label chip, it can be used for detecting high-voltage signal HV, this high-voltage signal HV can but the non-volatile scratch pad memory that is not limited in the RFID label chip provides write operation signal, thereby realize the write operation of RFID label chip.
As shown in Figure 1, high-voltage detecting circuit 10 comprises capacitance partial pressure module 110, high-voltage signal HV to be detected inputs to capacitance partial pressure module 110, capacitance partial pressure module 110 adopts principle of capacitive divider to the relatively low voltage division signal Vshare of high-voltage signal dividing potential drop output of input, usually, make the voltage division signal Vshare of output be less than or equal to the normal power voltage V of RFID label chip
DdThe circuit of this capacitance partial pressure module 110 is realized simple, and it can reach the effect of dividing potential drop equally, and the interlock circuit area is relatively little, can reduce the preparation cost of high-voltage detecting circuit 10.
Figure 2 shows that the physical circuit embodiment schematic diagram of capacitance partial pressure module shown in Figure 1.In this capacitance partial pressure module 110, use three mosfet transistors, utilize mos capacitance to connect to realize dividing potential drop.In embodiment illustrated in fig. 2, the grid of MOSFET is by forming mos capacitance between gate oxide and the raceway groove, as shown in Figure 2.Suppose that three mos capacitances 111,112,113 capacitance are respectively C1, C2, C3, the total capacitance after three mos capacitances series connection is C
Total, C then
Total=C1 * C2 * C3/ (C1 * C2+C1 * C3+C2 * C3).And suppose a termination 0 voltage VSS of capacitor C 1, a termination high-voltage signal HV of capacitor C 3, then the voltage swing got of Vshare node is HV * (C
Total/ C1).
The circuit area less of capacitance partial pressure module embodiment illustrated in fig. 2, and be very easy to and the MOS process compatible, preparation cost is low.
Continue shown in Figure 1ly, the voltage division signal Vshare that capacitance partial pressure module 110 is exported inputs to the Voltage-current conversion module 120 of high-voltage detecting circuit 10, and Voltage-current conversion module 120 can correspondingly be transformed to current signal I with voltage division signal Vshare
1, and with current signal I
1Export from output terminal.
In one embodiment, Voltage-current conversion module 120 can be the N-type metal-oxide-semiconductor of a plurality of serial connections, and voltage division signal Vshare controls the grid of a plurality of N-type metal-oxide-semiconductors simultaneously, and therefore, when Vshare increased, the output current of N-type metal-oxide-semiconductor increased, and also is current signal I
1Correspondingly increase; Otherwise, current signal I
1Also with Vshare reduce and corresponding reducing.
Therefore, the current signal I that exports of Voltage-current conversion module 120
1The voltage swing that can reflect high-voltage signal HV, high-voltage signal HV is current signal by indirect conversion, the degree of accuracy of current signal is high, and is not subject to technological fluctuation factor, capacitive coupling interference etc. and fluctuation variation (for voltage signal).
Continue shown in Figure 1, high-voltage detecting circuit 10 also comprises current source 130 and size of current control module 140, current source 130 can use the intrinsic current source circuit of the analog module of RFID label chip, therefore, current source 130 can provide accurate reference current I_bias to size of current control module 140.In this embodiment, size of current control module 140 usefulness current mirrors come mirror image to produce relatively electric current I
2, therefore, compare electric current I
2Size accurately controlled, for example, it can be the integral multiple of reference current I_bias.In one embodiment, compare electric current I
2The multiple of relative datum electric current I _ bias is subjected to size of current control to select signal controlling, for example, and control I
2For the 1-10 of reference current I_bias doubly.The particular circuit configurations way of realization of size of current control module 140 is not restrictive.
The output terminal of size of current control module 140 is connected with Voltage-current conversion module 120 output terminal direct-couplings, certainly, also can directly connect; The normal power voltage V of the other end access RFID label chip of size of current control module 140
Dd, the other end of Voltage-current conversion module 120 connects earth terminal; Therefore, V
Dd, size of current control module 140, Voltage-current conversion module 120 can in turn form comparison loop, electric current I with earth terminal
1With the comparison electric current I
2A that couples between Voltage-current conversion module 120 and size of current control module 140 engages and forms relatively.If I
1＜I
2, the A basic expressions of naming a person for a particular job is the high voltage that is higher than a certain predetermined voltage, and the testing result signal (Out_final) of the final output of logic module output 150 is high level, and reflect that high-voltage signal does not reach the predetermined voltage size requirements this moment; If I
1〉=I
2, the A basic expressions of naming a person for a particular job is the low-voltage that is lower than a certain predetermined voltage, and the testing result signal Out_final of the final output of logic module output 150 is low level, and reflect that high-voltage signal reaches the predetermined voltage size requirements this moment.The detection signal Out_final that logic module output 150 is exported can input to the charge pump in the RFID label chip, for example, and the switching between the control employed fast clock of charge pump and the slow clock.
In one embodiment, logic module output 150 can carry out shaping to the testing result signal of its output, so that it exports to other partial circuits of RFID control chip more accurately.
Therefore, in the high-voltage detecting circuit 10 embodiment illustrated in fig. 1, with the less current signal I of high-voltage signal conversion
1, with itself and comparison current signal I
2Carry out accurate comparison, on the one hand, electric current is more accurate, is not subject to the factor interference such as electric capacity, and the degree of accuracy of detection is higher; On the other hand, only at V
Dd, produce power consumption on the loop between size of current control module 140, Voltage-current conversion module 120 and the earth terminal, low in energy consumption; Again on the one hand, compare current signal I
2Accurately adjustable, can control flexibly, high-voltage detecting circuit is applied widely.
Predetermined voltage size take high-voltage signal specifically describes as 10V as example, and it can be used for successfully realizing the write operation of EEPROM, therefore, needs to detect high-voltage signal and whether reaches predetermined voltage; Further, the dividing potential drop ratio of supposing capacitance partial pressure module 110 is 0.1 times, if HV=10V, Vshare=0.1V, Voltage-current conversion module 120 will be exported the electric current of 5 μ A; Therefore, set relatively electric current I
2Be 5 μ A, if electric current I
1Less than 5 μ A, logic module output 150 output high level, the detected high-voltage signal of expression does not reach predetermined voltage 10V, if electric current I
1More than or equal to 5 μ A, logic module output 150 output low levels, the detected high-voltage signal of expression reaches predetermined voltage 10V.More specifically, reference current I_bias for example is set as 1 μ A, and size of current control module 140 is selected signal controlling by size of current control, and 5 times of current mirrors produce I to reference current I_bias
2=5 μ A.
Need to prove, high-voltage signal herein is that the inside normal power voltage with respect to the RFID label chip defines, and for example, the voltage of high-voltage signal HV is greater than normal power voltage V
DdVoltage and be less than or equal to 10V
Dd
The RFID label chip that above example has mainly illustrated high-voltage detecting circuit of the present invention and used this high-voltage detecting circuit.Although only the some of them embodiments of the present invention are described, those of ordinary skills should understand, and the present invention can be within not departing from its purport and scope implements with many other forms.Therefore, the example of showing and embodiment are regarded as illustrative and not restrictive, in the situation that do not break away from such as the defined spirit of the present invention of appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (12)
1. a high-voltage detecting circuit is used at radio frequency identification label chip high-voltage signal being detected, and it is characterized in that, this high-voltage detecting circuit comprises:
Capacitance partial pressure module (110) is used for described high-voltage signal is carried out dividing potential drop to export relatively low second voltage signal (Vshare);
Voltage-current conversion module (120) is used for described second voltage signal (Vshare) correspondingly is converted to the first electric current (I
1);
Current source (130), it is used for providing reference current (I_bias); And
Size of current control module (140), its based on described reference current (I_bias) in proportion adjustable ground export the second electric current (I
2);
Wherein, described the first electric current (I
1) and described the second electric current (I
2) compare to export the testing result of the described high-voltage signal of reflection.
2. high-voltage detecting circuit as claimed in claim 1 is characterized in that, described second voltage signal is less than or equal to the normal power voltage (V of described radio frequency identification label chip
Dd).
3. high-voltage detecting circuit as claimed in claim 2 is characterized in that, the voltage swing of described second voltage signal is 0.1 times of voltage swing of described high-voltage signal.
4. high-voltage detecting circuit as claimed in claim 1 or 2 is characterized in that, described size of current control module (140) uses current mirror to produce the second electric current (I that is multiple times than described reference current (I_bias) with mirror image
2).
5. high-voltage detecting circuit as claimed in claim 4 is characterized in that, size of current control selects signal to input to described size of current control module (140), described the second electric current (I
2) the size of current control that accessed to described size of current control module (140) of the multiple of relatively described reference current (I_bias) selects signal controlling.
6. such as claim 1 or 2 or 4 described high-voltage detecting circuits, it is characterized in that, the output terminal of the output terminal of described size of current control module (140) and described Voltage-current conversion module (120) couples; Normal power voltage (the V of described radio frequency identification label chip
Dd), described size of current control module (140), described Voltage-current conversion module (120) in turn form the loop with earth terminal.
7. high-voltage detecting circuit as claimed in claim 6, it is characterized in that, described high-voltage detecting circuit also comprises logic module output (150), the voltage swing that couples point (A) between described logic module output (150) detection described Voltage-current conversion module (120) and the size of current control module (140) is with the output logic level, and described logic level reflects the testing result of described high-voltage signal.
8. high-voltage detecting circuit as claimed in claim 7 is characterized in that, described the first electric current (I
1) less than described the second electric current (I
2) time, described logic level is high level; Described the first electric current (I
1) more than or equal to described the second electric current (I
2) time, described logic level is low level.
9. high-voltage detecting circuit as claimed in claim 7 is characterized in that, described logic module output (150) output high level signal is used for described logic level is carried out signal shaping output.
10. high-voltage detecting circuit as claimed in claim 1 or 2 is characterized in that, the voltage range of described high-voltage signal is greater than described normal power voltage (V
Dd) and be less than or equal to described normal power voltage (V
Dd) 10 times.
11. high-voltage detecting circuit as claimed in claim 1 or 2 is characterized in that, the capacitance partial pressure module is used a plurality of mos capacitances that are connected in series.
12. a radio frequency identification label chip is characterized in that, comprises such as each described high-voltage detecting circuit among the claim 1-11.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100606385A CN103308752A (en) | 2012-03-08 | 2012-03-08 | High voltage detection circuit and radio frequency identification label chip using high voltage detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100606385A CN103308752A (en) | 2012-03-08 | 2012-03-08 | High voltage detection circuit and radio frequency identification label chip using high voltage detection circuit |
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| Publication Number | Publication Date |
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| CN103308752A true CN103308752A (en) | 2013-09-18 |
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|---|---|---|---|
| CN2012100606385A Pending CN103308752A (en) | 2012-03-08 | 2012-03-08 | High voltage detection circuit and radio frequency identification label chip using high voltage detection circuit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049058A (en) * | 1989-07-22 | 1991-02-06 | 云南省电力工业局试验研究所 | On-line overvoltage monitor for electric power system |
| TW239190B (en) * | 1993-04-30 | 1995-01-21 | Philips Electronics Nv | |
| JP2002017036A (en) * | 2000-06-29 | 2002-01-18 | Nissan Motor Co Ltd | Over-current detection circuit |
| JP2003337145A (en) * | 2002-05-20 | 2003-11-28 | Mitsumi Electric Co Ltd | Voltage detection circuit |
| CN102014017A (en) * | 2010-09-30 | 2011-04-13 | 华为技术有限公司 | Signal detection circuit, method and system |
| CN102053198A (en) * | 2009-10-28 | 2011-05-11 | 凹凸电子（武汉）有限公司 | Voltage detection circuit and method and electronic system |
-
2012
- 2012-03-08 CN CN2012100606385A patent/CN103308752A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1049058A (en) * | 1989-07-22 | 1991-02-06 | 云南省电力工业局试验研究所 | On-line overvoltage monitor for electric power system |
| TW239190B (en) * | 1993-04-30 | 1995-01-21 | Philips Electronics Nv | |
| JP2002017036A (en) * | 2000-06-29 | 2002-01-18 | Nissan Motor Co Ltd | Over-current detection circuit |
| JP2003337145A (en) * | 2002-05-20 | 2003-11-28 | Mitsumi Electric Co Ltd | Voltage detection circuit |
| CN102053198A (en) * | 2009-10-28 | 2011-05-11 | 凹凸电子（武汉）有限公司 | Voltage detection circuit and method and electronic system |
| CN102014017A (en) * | 2010-09-30 | 2011-04-13 | 华为技术有限公司 | Signal detection circuit, method and system |
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Application publication date: 20130918 |