CN103308178A - Non-uniformity correction method for non-refrigeration infrared focal plane array - Google Patents
Non-uniformity correction method for non-refrigeration infrared focal plane array Download PDFInfo
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- CN103308178A CN103308178A CN2013102164228A CN201310216422A CN103308178A CN 103308178 A CN103308178 A CN 103308178A CN 2013102164228 A CN2013102164228 A CN 2013102164228A CN 201310216422 A CN201310216422 A CN 201310216422A CN 103308178 A CN103308178 A CN 103308178A
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Abstract
The embodiment of the invention discloses a non-uniformity correction method for a non-refrigeration infrared focal plane array. The non-uniformity correction method comprises the following steps of calculating correction parameters of the non-refrigeration infrared focal plane array under at least two calibrated work temperatures and storing the correction parameters in a memory; measuring the substrate temperature of the non-refrigeration infrared focal plane array; acquiring a current correction parameter corresponding to the substrate temperature from the memory according to the substrate temperature; and correcting an infrared image by using the current correction parameter. According to the non-uniformity correction method disclosed by the invention, the correction parameter of the non-refrigeration infrared focal plane array at each calibrated work temperature is stored, so that when the non-refrigeration infrared focal plane array works, one-point correction for the infrared focal plane array is not needed and the correction parameter corresponding to the current work temperature of the infrared focal plane array is directly read from the memory of the system, and an infrared imaging system is further enabled to realize continuous real-time imaging for an infrared target.
Description
Technical field
The present invention relates to the infrared imaging system field, especially relate to a kind of asymmetric correction method of un-cooled infrared focal plane array.
Background technology
Infrared focal plane array is beginning of the eighties late 1970s, grows up under the promotion of national defense applications and the application of other strategy and tactics.It is the important photoelectric device that obtains scenery infrared emanation information.Infrared focal plane array is the core component of infrared imagery technique, is widely used in the imaging of the every field such as military affairs, industry, agricultural, medical treatment, forest fire protection.
Infrared imaging system is the important component part of infra-red thermal imaging system.Present various infrared imaging system has been widely applied to communication, medical treatment, military affairs, the field such as industrial.
Infrared focal plane array belongs to second generation infrared imaging device, is the core of modern infrared imaging system, has simple in structure, working stability, an advantage such as noise equivalent temperature difference is little, sensitivity is high.
Infrared system in the ideal case, infrared focal plane array is subjected to homogeneous radiation, output amplitude should be just the same.But in fact, because the impact of the factors such as the semiconductor material inhomogeneous (unevenness of impurity concentration, crystal defect, inner structure etc.) of making device, mask error, defective, process conditions, be subjected in the situation of homogeneous radiation, its output amplitude is not identical, the heterogeneity of infrared focal plane array response that Here it is.
Causing infrared heteropical reason to have a lot, wherein mainly is the heterogeneity that thermal imagery is surveyed unit self, and the input of the external world of infrared focal plane array also can cause heteropical impact in addition.Such as the bias voltage of detector, the difference of bias current, also can cause the unevenness of output, main manifestations is fixing additive noise.But owing to being subject to making the restriction of material and manufacture craft, the response characteristic of each pixel of infrared focal plane array can't be accomplished in full accord.
This heterogeneity of infrared focal plane array can have a strong impact on detection sensitivity and the spatial resolution of infrared imaging system.Therefore, all need in actual use infrared focal plane array is done Nonuniformity Correction.
At present, infrared Nonuniformity Correction commonly used has a variety of, as based on a point calibration, the non-homogeneous algorithm of two point calibrations, the time domain high-pass filtering method based on scene, adaptive artificial neural network method and Mean Filtering Algorithm of calibration etc.But also do not find the stronger algorithm of a kind of adaptability at present, various heterogeneity algorithms have its deficiency.
In the prior art, what extensively be applied to putting into practice at present is some scaling algorithms and two-point calibration algorithm.
Two point calibration algorithms have been considered gain inequality and the biasing unevenness of detector, and under normal conditions, when the incident infrared radiation was zero, the response of detector output was non-vanishing.Peg method is passed through the rotation translation with the resonse characteristic of all probe units, is transformed to the same resonse characteristic.After overcorrect, under uniform radiation input condition, the output electrical signals of each probe unit is identical, thereby eliminates the heterogeneity noise of infrared image.But two point calibrations that carry out infrared image need to carry out Temperature Scaling.
Some correcting algorithms are Non-uniformity Correction Algorithms the earliest, two kinds of situations for gain coefficient unevenness and biasing coefficient unevenness, one point calibration method also can be divided into two kinds, be divided into the inhomogeneous correction of gain coefficient and the inhomogeneous correction of setovering, but once can only satisfy a kind of correction.
Employing is to the nonuniformity correction of biasing, the principle of one point calibration is that the radiation flux of the output signal of supposition detector photosensitive unit and target is linear, some correcting algorithms are exactly under the uniform light radiation, the output signal of each pixel is proofreaied and correct as consistent, namely under a certain light irradiance, it is a certain signal that the output signal of different pixels is proofreaied and correct, and this signal can be maximal value or some other value under this condition, generally averages.
The essence of one point calibration has just been done compensation to the dark current of device, correction is not made in gain.
In the real work of focal plane arrays (FPA), be nonlinear relationship between the output signal of the photosensitive unit of detector and the radiation flux of target, gain and biasing also can produce nonlinearities change along with the variation of environment temperature, cause the infrared heterogeneity of infrared focal plane array.Two point calibration methods are that the working temperature interval of infrared focal plane array is divided into each little temperature range by the rising gradient of temperature.In a little temperature range, suppose that the radiation flux of the output signal of the photosensitive unit of detector and target is linear, then utilize the algorithm of two point calibrations to calculate offset parameter in this little temperature range.
Progress along with demand and the technology in market, infrared imaging system has generally adopted the packing forms without TEC at present, without the infrared imaging system of TEC packing forms except needs carry out two traditional point calibrations, in the use procedure of reality, because the variation along with the temperature generation of the variation of the time of using and environment temperature and infrared imaging system focal plane arrays (FPA) itself, can produce temperature and float, therefore need to carry out frequently shutter correction to eliminate infrared heteropical impact of infrared focal plane array.
Under wide temperature range, eliminate the infrared heterogeneity of infrared focal plane array if utilize some correcting algorithms, choose uniform irradiance to the infrared imaging system focal plane arrays (FPA) when needing to proofread and correct on one point, this method is so that in the actual use procedure of infrared imaging system, must temporarily interrupt infrared imaging system to the acquisition of information of infrared target.The correction of this frequently shutter has had a strong impact on the Continuous Observation of infrared imaging system to infrared target.
Summary of the invention
One of purpose of the present invention provides a kind ofly can be upgraded the correction parameter of infrared imaging system and not need to interrupt the asymmetric correction method of the un-cooled infrared focal plane array of infrared imaging system.
The disclosed technical scheme of the embodiment of the invention comprises:
A kind of asymmetric correction method of un-cooled infrared focal plane array is provided, has it is characterized in that, having comprised: steps A: calculated the correction parameter of infrared focal plane array under at least two staking-out work temperature, and described correction parameter is stored in the storer; Step B: the underlayer temperature of measuring described infrared focal plane array; Step C: according to described underlayer temperature, from described storer, obtain the current correction parameter corresponding with described underlayer temperature; Step D: with described infrared focal plane array target object is carried out infrared imaging, obtain infrared image; Step e: described infrared image is proofreaied and correct with described current correction parameter.
Further, described steps A comprises: infrared imaging system is placed in the constant temperature oven; The temperature of regulating described constant temperature oven is to the first staking-out work temperature and remain on described the first staking-out work temperature; Calculate first correction parameter of described infrared focal plane array under described the first staking-out work temperature of described infrared imaging system with peg method; Described the first correction parameter is stored in the described storer; The temperature of regulating described constant temperature oven is to the second staking-out work temperature and remain on described the second staking-out work temperature; Calculate second correction parameter of described infrared focal plane array under described the second staking-out work temperature with peg method; Described the second correction parameter is stored in the described storer.
Further, described steps A also comprises: regulate temperature to the three staking-out work temperature of described constant temperature oven and remain on described the 3rd staking-out work temperature; Calculate three correction parameter of described infrared focal plane array under described the 3rd staking-out work temperature with peg method; Described the 3rd correction parameter is stored in the described storer.
Further, described step C comprises: more described underlayer temperature and described at least two staking-out work temperature, obtain equal with described underlayer temperature or with described underlayer temperature between the staking-out work temperature of difference minimum as corresponding working temperature; Read the correction parameter under the described corresponding working temperature in described storer, the correction parameter under the described corresponding working temperature is as described current correction parameter.
Further, described step C comprises: the little temperature range under more described underlayer temperature and described at least two the staking-out work temperature, judge the little temperature range that described underlayer temperature is affiliated; The correction parameter of the little temperature range under the described underlayer temperature is as described current correction parameter.
Further, described correction parameter comprises offset parameter and/or gain parameter.
In the method for embodiments of the invention, owing to having stored the correction parameter of infrared focal plane array under each staking-out work temperature spot, when infrared focal plane arrays (FPA) work, do not need infrared focal plane array is carried out a point calibration, directly from system storage, read the correction parameter corresponding with the infrared focal plane array current operating temperature, thereby it is continual to the infrared target real time imagery to have guaranteed that infrared imaging system realizes.
Description of drawings
Fig. 1 is the schematic flow sheet of asymmetric correction method of a kind of un-cooled infrared focal plane array of one embodiment of the invention.
Fig. 2 is the demarcation in the one embodiment of the invention and stores the schematic flow sheet of the step of correction parameter.
Embodiment
Describe below with reference to the accompanying drawings embodiments of the invention in detail.
Fig. 1 is the schematic flow sheet of asymmetric correction method of a kind of un-cooled infrared focal plane array of one embodiment of the invention.As shown in Figure 1, in the present embodiment, the asymmetric correction method of un-cooled infrared focal plane array comprises step 10, step 12, step 14 and step 16.Below in conjunction with accompanying drawing each step in the method is elaborated.
Step 10: demarcate and the storage correction parameter.
In the embodiments of the invention, at first the infrared focal plane array of infrared imaging system is demarcated, obtain the correction parameter of this infrared focal plane array under each staking-out work temperature, then these correction parameters are stored in the storer of infrared imaging system, in follow-up infrared imaging process, call on demand.For example, in the follow-up infrared imaging process, when temperature occurring and float, from storer, read the current correction parameter under the relevant work temperature and with this current correction parameter infrared image is proofreaied and correct the drift of compensation temperature.
The working temperature of infrared focal plane array has certain interval range, if each temperature spot in the working temperature interval range is demarcated, workload will be very huge, and needing the data volume of the correction parameter of storage will be very large also, therefore each temperature spot be demarcated very difficult.
Therefore, in the embodiments of the invention, can in the working temperature interval of infrared focal plane array, select some staking-out work temperature (at least two staking-out work temperature) to demarcate, obtain the correction parameter under these staking-out work temperature (at least two staking-out work temperature).
In the some embodiments of the present invention, the working temperature interval of infrared focal plane array can be divided into each little temperature range by the gradient that temperature rises.According to the sensitivity of the temperature sensor of infrared imaging system and the material behavior of infrared focal plane array, for each little temperature range is chosen suitable temperature range.In same little temperature range, use identical correction parameter.Different little temperature ranges, correction parameter is different.Like this, for each little temperature range, only the correction parameter at one of them temperature spot place of need demarcation gets final product as the correction parameter of whole little temperature range, namely, at this moment, the staking-out work temperature that is used for demarcating of aforementioned selection belongs to respectively a temperature in these little temperature ranges.Here, the selection that is used for the temperature of demarcation in the selection of little temperature range and the little temperature province all can be according to the actual conditions flexible choice, and the present invention does not do special restriction.
Among these embodiment, correspondingly also store the relevant information of each little temperature province in the storer of infrared imaging system, for example temperature value of the end points of each little temperature range etc.
Among other embodiment of the present invention, the staking-out work temperature that is used for demarcating of aforementioned selection is some temperature spots of selecting according to the needs of actual conditions in the working temperature interval of infrared focal plane array.The correction parameter of its nearest staking-out work temperature of all the other temperature spot service ranges between two selected staking-out work temperature gets final product.Here, the selection of staking-out work temperature can be according to the actual conditions flexible choice, and the present invention does not do particular restriction.Spacing between each staking-out work temperature (namely between two staking-out work temperature temperature poor) can be identical (the staking-out work temperature of namely selecting evenly distributes in the working temperature interval of infrared focal plane array), also can be different (staking-out work temperature non-uniform Distribution in the working temperature interval of infrared focal plane array of namely selecting).
Therefore, in step 10, calculate the correction parameter of infrared focal plane array under at least two staking-out work temperature, and the correction parameter that calculates is stored in the storer of infrared imaging system.
In one embodiment of the present of invention, the flow process of demarcating and storing correction parameter can be as shown in Figure 2.
At first, in step 101, infrared imaging system is positioned in the constant temperature oven, that is to say, will in constant temperature oven, carry out the calibration process of the infrared focal plane array of infrared imaging system.
Then, in step 102, the temperature of regulating constant incubator with adjustment to a staking-out work temperature of constant temperature oven, and remains on this staking-out work temperature.
Subsequently, in step 106, calculate the correction parameter of infrared focal plane array under current staking-out work temperature.Here, calculate the method for the correction parameter of infrared focal plane array under the uniform temperature and can use any suitable method, for example, can use two point calibration methods.These methods can be methods commonly used in this area, are not described in detail in this.
Then, the correction parameter that calculates under this staking-out work temperature that obtains in the step 106 is stored in the storer of infrared imaging system.The correction parameter that calculate to obtain can be stored in any suitable storer in the infrared imaging system.
Demarcation and the storage of the correction parameter under the staking-out work temperature like this, have namely been finished.
After the demarcation of the correction parameter under this staking-out work temperature and storage are finished, in step 110, judge whether that all the staking-out work temperature that need to demarcate have all been demarcated to finish.Here, as mentioned before, the staking-out work temperature that needs to demarcate can be according to the actual conditions flexible choice.
If judge in the step 110 that all the staking-out work temperature that need to demarcate also do not have to demarcate to finish, then the temperature of regulating constant incubator arrives next staking-out work temperature, and remains on this staking-out work temperature, then carries out above-mentioned step 106,108 and 110.
If all the staking-out work temperature that need to demarcate of judgement have all been demarcated and finished in the step 110, then demarcating and store the correction parameter step (is that step 10) finishes.
For example, among the embodiment, step 10 can comprise the following steps:
Infrared imaging system is placed in the constant temperature oven;
The temperature of regulating constant incubator is to the first staking-out work temperature and remain on the first staking-out work temperature;
Calculate first correction parameter of infrared focal plane array under the first staking-out work temperature of infrared imaging system with peg method;
The first correction parameter is stored in the storer;
The temperature of regulating constant incubator is to the second staking-out work temperature and remain on the second staking-out work temperature;
Calculate second correction parameter of infrared focal plane array under the second staking-out work temperature with peg method;
The second correction parameter is stored in the storer.
In above-described embodiment, can also comprise:
Temperature to the three staking-out work temperature of regulating constant incubator also remain on the 3rd staking-out work temperature;
Calculate three correction parameter of infrared focal plane array under the 3rd staking-out work temperature with peg method;
The 3rd correction parameter is stored in the storer.
Easily understand, similarly, above-described embodiment can also be included in the similar step under a plurality of staking-out work temperature of the 4th staking-out work temperature, the 5th staking-out work temperature, the 6th staking-out work temperature etc.
In the embodiments of the invention, when storing the correction parameter that calculates under each staking-out work temperature that obtains, can be according to any suitable mode or data structure storage.For example, can be with how much the be divided into a plurality of storage spaces of storer according to the staking-out work temperature of choosing, each storage space is chosen suitable size according to the specification of infrared focal plane array, a staking-out work temperature of the corresponding infrared focal plane array of each storage space, and the correction that calculates according to abovementioned steps under this staking-out work temperature of storage correspondence, in a storage space, correction parameter can be stored successively according to the distribution of infrared focal plane array pixel position.
In the embodiments of the invention, aforesaid correction parameter can be any parameter that the heterogeneity of the infrared focal plane array of infrared imaging system is proofreaied and correct of being suitable for.For example, among the embodiment, the correction parameter here can be offset parameter and/or gain parameter.The concept of offset parameter and/or gain parameter is the Common Concepts in the nonuniformity correction in this area, is not described in detail in this.
Step 12: the underlayer temperature of measuring infrared focal plane array.
The underlayer temperature of infrared focal plane array has represented the current working temperature of infrared focal plane array.In the embodiments of the invention, in step 12, measure the underlayer temperature of infrared focal plane array.This measurement can realize by temperature sensor.Temperature sensor is converted to electric signal with the substrate temperature of infrared focal plane array, and through analog to digital conversion, converts digital signal to, then sends to the controller of infrared imaging system.
For example, among the embodiment, temperature sensor can comprise thermistor.The resistance of thermistor can change with the change of temperature, and when the underlayer temperature of infrared focal plane arrays (FPA) changes, the resistance size of thermistor also follower changes, so that the voltage VTEMP of temperature sensor output changes.The underlayer temperature of VTEMP and infrared focal plane array linear:
VTEMP=A×T+B。
Wherein, T is the underlayer temperature of infrared focal plane array, and A and B are constant coefficients, is determined by the characteristic of the temperature sensor of infrared imaging system.
Step 14: obtain the current correction parameter corresponding with underlayer temperature.
Measure and obtain according to this underlayer temperature, from previously described storer, to obtain the current correction parameter corresponding with this underlayer temperature of infrared focal plane array after the underlayer temperature.
As mentioned before, among some embodiment, stored the correction parameter under a plurality of staking-out work temperature in the storer, and wherein the correction parameter under each staking-out work temperature is the correction parameter of infrared focal plane array in the little temperature range.Therefore, in step 14, obtained underlayer temperature after, judge which little temperature range this underlayer temperature belongs to, then, with the correction parameter of the little temperature range under it as the current correction parameter corresponding with this underlayer temperature.Here, refer to the current correction parameter of infrared focal plane array under this underlayer temperature with the current correction parameter of underlayer temperature " corresponding ".
For example, among these embodiment, the temperature value of the end points of each little temperature range of storing in can the storer by relatively underlayer temperature and infrared imaging system determines which little temperature range this underlayer temperature belongs to.
As mentioned before, the correction parameter of each little temperature range is demarcated in step 10 and is stored, therefore, and at this moment, judgement place the underlayer temperature that measure to obtain belong to after which little temperature range, can directly from storer, read the correction parameter of the little temperature range under it.
Perhaps, as mentioned before, among some embodiment in addition, memory stores the correction parameter under a plurality of staking-out work temperature, and the correction parameter that the correction parameter of all the other temperature spots between two staking-out work temperature can its nearest staking-out work temperature of service range.Therefore, at this moment, can compare at least two staking-out work temperature in underlayer temperature and the step 10, obtain equal with underlayer temperature or with underlayer temperature between the staking-out work temperature of difference minimum as corresponding working temperature; Then read the correction parameter under this correspondence working temperature in storer, the correction parameter under this correspondence working temperature is as current correction parameter.
Step 16: infrared imaging obtains infrared image, and proofreaies and correct infrared image with current correction parameter.
Obtained after the current correction parameter under the current underlayer temperature, with infrared imaging system (using in other words infrared focal plane array) target object has been carried out normal infrared imaging, obtained infrared image.With infrared imaging system or infrared focal plane array to target object carry out infrared imaging obtain the concrete steps of infrared image can be identical with step commonly used in this area, be not described in detail in this.
Obtain after the infrared image, the current correction parameter that obtains in the namely available step 14 is proofreaied and correct the infrared image that obtains.
For example, among the embodiment, current correction parameter comprises current offset parameter O and current gain parameter G, then can be according to formula V ' (i, j)=G(i, j) * V(i, j)+O(i, j) the calculation correction result, generate the infrared image after proofreading and correct.V ' (i wherein, j) be pixel (i in the infrared image after proofreading and correct, j) magnitude of voltage of locating, V(i, j) proofread and correct pixel (i in the front infrared image, j) magnitude of voltage of locating, G(i, j) be that current gain parameter is at pixel (i, j) value of locating, O(i, j) be the value that current offset parameter is located at pixel (i, j), here (i, j) refer to pixel in the infrared focal plane array, wherein i is the natural number less than or equal to the line number of infrared focal plane array, and j is the natural number less than or equal to the columns of infrared focal plane array.
Like this, in the embodiments of the invention, in the process of carrying out normal infrared imaging, underlayer temperature that can the Real-Time Monitoring infrared focal plane array, and from storer, read corresponding correction parameter and the infrared image that becomes is carried out Nonuniformity Correction according to underlayer temperature in real time.
Method in the embodiments of the invention can be with any suitable software or hardware instance.For example, among the embodiment, can realize with the FPGA correcting circuit, the FPGA correcting circuit has the advantages such as simplicity of design, easy realization.
For example, the increasing progressively with the increasing progressively of pixel number of staking-out work temperature of the correction parameter of infrared focal plane array under each staking-out work temperature according to infrared focal plane array is stored in the FLASH chip successively.When infrared imaging system work, the temperature sensor of infrared imaging system gathers infrared focal plane array substrate temperature information, convert output voltage to, input to FPGA after process A/D converter spare is finished digital-to-analog conversion, FPGA is according to the corresponding correction parameter of Information Selection of input.The infrared target object is through infrared imaging system identification, infrared imaging system gathers the information relevant with output, the information of output is delivered to A/D converter spare after strengthening through signal, input to FPGA after finishing digital-to-analog conversion, export after the operation of process correction program and the figure image intensifying, data are through D/A converter spare, are input to terminal presentation facility through amplifier after converting simulating signal to.
In the embodiments of the invention, need to choose irradiance in the time of for a point calibration, recomputate the problem of correction parameter, the correction parameter of infrared focal plane array under each staking-out work temperature is stored in the system storage, when infrared focal plane arrays (FPA) when work temperature occurs and floats, from system storage, read the correction parameter corresponding with the infrared focal plane array current operating temperature, then utilize this correction parameter that reads to come the drift of rectification building-out temperature.
Infrared focal plane array need to be chosen irradiance again when carrying out a point calibration, meeting short interruption infrared imaging system is to the imaging of infrared target like this, and in the method for the present invention owing to having stored the correction parameter of infrared focal plane array under each staking-out work temperature, when infrared focal plane arrays (FPA) work, do not need infrared focal plane array is carried out a point calibration, directly from system storage, read the correction parameter corresponding with the infrared focal plane array current operating temperature, thereby it is continual to the infrared target real time imagery to have guaranteed that infrared imaging system realizes.
Abovely describe the present invention by specific embodiment, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various modifications to the present invention, be equal to replacement, change etc., these conversion all should be within protection scope of the present invention as long as do not deviate from spirit of the present invention.In addition, the different embodiment of above many places described " embodiment " expression can certainly be with its all or part of combination in one embodiment.
Claims (6)
1. the asymmetric correction method of a un-cooled infrared focal plane array is characterized in that, comprising:
Steps A: calculate the correction parameter of infrared focal plane array under at least two staking-out work temperature, and described correction parameter is stored in the storer;
Step B: the underlayer temperature of measuring described infrared focal plane array;
Step C: according to described underlayer temperature, from described storer, obtain the current correction parameter corresponding with described underlayer temperature;
Step D: with described infrared focal plane array target object is carried out infrared imaging, obtain infrared image;
Step e: described infrared image is proofreaied and correct with described current correction parameter.
2. the method for claim 1 is characterized in that, described steps A comprises:
Infrared imaging system is placed in the constant temperature oven;
The temperature of regulating described constant temperature oven is to the first staking-out work temperature and remain on described the first staking-out work temperature;
Calculate first correction parameter of described infrared focal plane array under described the first staking-out work temperature of described infrared imaging system with peg method;
Described the first correction parameter is stored in the described storer;
The temperature of regulating described constant temperature oven is to the second staking-out work temperature and remain on described the second staking-out work temperature;
Calculate second correction parameter of described infrared focal plane array under described the second staking-out work temperature with peg method;
Described the second correction parameter is stored in the described storer.
3. method as claimed in claim 2 is characterized in that, described steps A also comprises:
Regulate temperature to the three staking-out work temperature of described constant temperature oven and remain on described the 3rd staking-out work temperature;
Calculate three correction parameter of described infrared focal plane array under described the 3rd staking-out work temperature with peg method;
Described the 3rd correction parameter is stored in the described storer.
4. the method for claim 1 is characterized in that, described step C comprises:
More described underlayer temperature and described at least two staking-out work temperature, obtain equal with described underlayer temperature or with described underlayer temperature between the staking-out work temperature of difference minimum as corresponding working temperature;
Read the correction parameter under the described corresponding working temperature in described storer, the correction parameter under the described corresponding working temperature is as described current correction parameter.
5. the method for claim 1 is characterized in that, described step C comprises:
Little temperature range under more described underlayer temperature and described at least two the staking-out work temperature is judged the little temperature range that described underlayer temperature is affiliated;
The correction parameter of the little temperature range under the described underlayer temperature is as described current correction parameter.
6. the method for claim 1 is characterized in that, described correction parameter comprises offset parameter and/or gain parameter.
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