CN103280493A - Manufacturing technique of crystalline silicon solar cell - Google Patents
Manufacturing technique of crystalline silicon solar cell Download PDFInfo
- Publication number
- CN103280493A CN103280493A CN201310235192XA CN201310235192A CN103280493A CN 103280493 A CN103280493 A CN 103280493A CN 201310235192X A CN201310235192X A CN 201310235192XA CN 201310235192 A CN201310235192 A CN 201310235192A CN 103280493 A CN103280493 A CN 103280493A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon nitride
- silicon
- silicon solar
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to manufacturing techniques of batteries, in particular to a manufacturing technique of a crystalline silicon solar cell. The manufacturing technique comprises the following steps: texturing, diffusing, removing phosphorosilicate glass and PECVD deposited silicon nitride, etching on the surface of silicon chips, stoving, silk-screen printing, sintering as well as sorting and inspecting. The manufacturing technique of the crystalline silicon solar cell has the advantages that ion etching is conducted on the coated silicon chip with a reactive ion etching device, fine uneven surface is formed on the surface of the silicon nitride at first, a dense silicon nitride layer is formed on the surface of the silicon nitride after the silicon nitride is impacted by the reactive ions repeatedly, and thus the purpose of bilayer silicon nitride film is achieved. The crystalline silicon solar cell made through the manufacturing method has the advantages that short waves in the sunlight can be absorbed by the front surface of the cell well, and the short-circuit current is improved. Further, the dense silicon nitride layer is helpful in stabilizing the solar cell, reducing light failure, prolonging the service life of the solar cell and improving the efficiency by more than 0.6%.
Description
Technical field
The present invention relates to a kind of battery production technology, is a kind of crystal-silicon solar cell production technology more specifically.
Background technology
Solar cell is that the sunlight that absorbs is generated electricity through the opto-electronic conversion of semi-conducting material, and how promoting solar cell is to improve one of key factor of conversion efficiency to the absorption of sunlight.Traditional solar cell is to make its sensitive surface form matte micron/submicrometer structure by acid/alkali process for etching, reaches the purpose that increases sunlight incident.Nearest studies show that, can reach nanostructure by carry out the more etching of fine texture by the whole bag of tricks on the micron/submicrometer structure of suede structure, can improve the absorption of sunlight significantly.For example the silicon chip after making herbs into wool carries out reactive ion etching (Reactive Ion Etching RIE), can improve the efficient about 0.5% of solar cell, but this method can not shorten the cell decay time.
Except considering to improve with making herbs into wool the light absorption of solar cell, also can consider to improve from the improvement of antireflective coating the light absorption of solar cell.Antireflecting principle is that the optical superposition that utilizes former and later two surfaces of antireflection layer (ARC) to reflect also disappears mutually, thereby reaches the effect of diminished reflex light.When the antireflection layer of crystal-silicon solar cell satisfies best antireflective condition, following relational expression is arranged:
In the following formula: n0 is the refractive index of air (or glass); NA is the refractive index of antireflection layer; NSi is the refractive index of crystal-silicon solar cell, nSi ≈ 3.8.
For airborne solar cell, n0=1 calculates: nA ≈ 1.949.And in the reality, crystal-silicon solar cell normally is encapsulated under glass or other encapsulating materials (as EVA), and this moment, n0 ≈ 1.5, then the refractive index n A ≈ 2.387 of antireflection layer.Hence one can see that, and the refractive index of silicon nitride film is about at 2.387 o'clock, can obtain best anti-reflective effect.Yet, can cause serious absorption loss water when the refractive index of silicon nitride film is excessive, therefore, the refractive index of silicon nitride film can not be excessive.Often between 2.0-2.1, thickness presents navy blue to the refractive index of the individual layer silicon nitride film of practical application between 75-80nm.Yet the refractive index of silicon nitride film and its surface passivation effect have close relationship.The silicon nitride film of refractive index higher (for example between the 2.2-2.3) has higher Si-H key density, can reduce reverse saturation current effectively, has better passivation effect.Therefore, consider optical loss after, the individual layer silicon nitride film be because can not adopting bigger refractive index, and can not give play to its excellent passivation effect fully.Rational double-deck silicon nitride film structure can further improve the passivation effect of film, and can not bring serious optical absorption loss.
Summary of the invention
At above deficiency, the invention discloses a kind of good stability, the rate of decay is slow, efficient is high crystal-silicon solar cell production technology, after comprising the steps: making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, to there be the silicon chip of silicon nitride to carry out the etching of silicon nitride surface through reactive ion etch equipment again, afterwards silicon chip is carried out silk screen printing, sintering and go-on-go, finish the making of the whole technology of solar cell.
The present invention is achieved by the following technical solutions:
A kind of crystal-silicon solar cell production technology comprises the steps: making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, silicon chip surface etching, oven dry, silk screen printing, sintering and go-on-go.
Above-mentioned silicon chip surface etching adopts reactive ion etch equipment to carry out etching.
Above-mentioned etching gas is SF6 and Cl2.
Its technological parameter is: SF6: 50-1000sccm, Cl2:5-10sccm, power 150-2000w, pressure 4-10Pa, etching period 0.5-5min.
Above-mentioned crystalline silicon is monocrystalline silicon or polysilicon.
PECVD: be to make the gas ionization that contains the film composed atom by microwave or radio frequency etc., form plasma in the part, and the plasma chemistry activity be very strong, is easy to react, and deposits desired film at substrate.For chemical reaction can be carried out under lower temperature, utilized the activity of plasma to promote reaction, thereby this CVD is called plasma enhanced chemical vapor deposition (PECVD).
The invention has the beneficial effects as follows: adopt the silicon chip of reactive ion etch equipment behind plated film to carry out ion(ic) etching, at first can form tiny rough surface in silicon nitride surface, and silicon nitride surface is through the bombardment of reactive ion, can form the dense silicon nitride layer of one deck, reach the purpose of duplicature silicon nitride film, be conducive to sunlight in the absorption of battery front surface to shortwave, reach the effect that improves short circuit current; And fine and close silicon nitride layer to be conducive to solar cell stable, reduce light decay, improve the useful life of solar cell, improved efficiency is more than 0.6%.
Description of drawings:
Fig. 1 is for reflecting comparison diagram with the production technology of this invention and the polycrystalline solar cell piece of traditional processing technology preparation to sunlight;
Fig. 2 is the efficient decay pattern of the polycrystalline solar cell of this invented technology and traditional handicraft making;
Fig. 3 is the efficient distribution map of the brilliant solar cell of this invented technology making;
Fig. 4 is the efficient distribution map of the polycrystalline solar cell of traditional handicraft making;
Among the figure: the polycrystalline solar cell reflectivity of 1-traditional handicraft preparation, the polycrystalline solar cell reflectivity of 2-the inventive method preparation, the polycrystalline solar cell decay of 3-traditional handicraft preparation, the polycrystalline solar cell decay of 4-the inventive method preparation.
Embodiment:
The present invention will be further described below in conjunction with the drawings and specific embodiments, so that those skilled in the art can better understand the present invention, but therefore do not limit the present invention.
After polysilicon chip carries out making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, will have the silicon chip of silicon nitride to carry out the silicon nitride surface etching through reactive ion etch equipment again, silicon nitride surface forms tiny rough surface.Afterwards silicon chip is carried out silk screen printing, sintering and go-on-go, finish the making of the whole technology of solar cell.
The technological parameter of reactive ion etching is SF
6100sccm, Cl
27sccm, power 1000w pressure 5Pa, etching period 1min.Gained solar cell reflectivity, the rate of decay, efficient detect sees Fig. 1,2 and 3.
As seen from Figure 1 at short-wave band, the solar cell absorptance of using this invented technology has obvious lifting than the absorptance of the solar cell of traditional handicraft.As seen from Figure 2, the battery of same efficient uses the solar cell decay behind efficiency of this technology high by 0.25%; And use the solar cell of this technology also to significantly reduce die-away time.According to Fig. 3 as can be known, the solar cell that uses this technology is to the improved efficiency of efficient more than 0.6%, and the efficient stepping is more concentrated.By above analysis as can be seen, with the solar cell of this method manufacturing not only the efficient of battery obtain whole the lifting; And can predict after the power station is installed, its station output is also improved (decay of battery reduces) greatly.
Monocrystalline silicon solar cell production technology, comprise the steps: making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, will have the silicon chip of silicon nitride to carry out the silicon nitride surface etching through reactive ion etch equipment again, silicon nitride surface forms tiny rough surface.Afterwards silicon chip is carried out silk screen printing, sintering and go-on-go, finish the making of the whole technology of solar cell.
The technological parameter of reactive ion etching is SF
6100sccm, Cl
27sccm, power 1000w pressure 5Pa, etching period 1min.Gained solar cell reflectivity, the rate of decay, that efficient is detected on embodiment 1 is basic identical.
After polysilicon chip carries out making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, will have the silicon chip of silicon nitride to carry out the silicon nitride surface etching through reactive ion etch equipment again, silicon nitride surface forms tiny rough surface.Afterwards silicon chip is carried out silk screen printing, sintering and go-on-go, finish the making of the whole technology of solar cell.
The technological parameter of reactive ion etching is SF
6100sccm, Cl
27sccm, power 1000w pressure 5Pa, etching period 5min.Embodiment 1 is high by 1% for gained solar cell luminance factor, and the efficient after the decay is lower by 0.1% than embodiment 1, efficient is than embodiment 1 low 1%.
After polysilicon chip carries out making herbs into wool, reactive ion etching, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride,, silicon nitride surface forms tiny rough surface.Afterwards silicon chip is carried out silk screen printing, sintering and go-on-go, finish the making of the whole technology of solar cell.
The technological parameter of reactive ion etching is SF
6100sccm, Cl
27sccm, power 1000w pressure 5Pa, etching period 1min.Gained solar cell luminance factor embodiment is 1 high by 2%, to be all solar cell rate of decay efficient when 50h of 17.5% be about 17.2% to efficient, and, efficient faster and low by about 0.25% with efficient decay behind efficiency than the present invention rate of decay is than embodiment 1 low about 0.3%.
Claims (8)
1. a crystal-silicon solar cell production technology comprises the steps: making herbs into wool, diffusion, removal phosphorosilicate glass and PECVD deposited silicon nitride, silicon chip surface etching, oven dry, silk screen printing, sintering and go-on-go.
2. a kind of crystal-silicon solar cell production technology according to claim 1 is characterized in that: the silicon chip surface etching adopts reactive ion etch equipment to carry out etching.
3. a kind of crystal-silicon solar cell production technology according to claim 2, it is characterized in that: described etching gas is SF
6And Cl
2
4. a kind of crystal-silicon solar cell production technology according to claim 3 is characterized in that: described SF
6: 50-1000sccm, Cl
2:5-10sccm.
5. a kind of crystal-silicon solar cell production technology according to claim 2 is characterized in that: described reactive ion etch equipment power 150-2000w.
6. a kind of crystal-silicon solar cell production technology according to claim 2 is characterized in that: described reactive ion etch equipment pressure 4-10Pa.
7. a kind of crystal-silicon solar cell production technology according to claim 1 and 2 is characterized in that: the time 0.5-5min of described surface etching.
8. a kind of crystal-silicon solar cell production technology according to claim 1, it is characterized in that: described crystalline silicon is monocrystalline silicon or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310235192.XA CN103280493B (en) | 2013-06-14 | 2013-06-14 | A kind of crystal-silicon solar cell production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310235192.XA CN103280493B (en) | 2013-06-14 | 2013-06-14 | A kind of crystal-silicon solar cell production technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103280493A true CN103280493A (en) | 2013-09-04 |
| CN103280493B CN103280493B (en) | 2016-12-28 |
Family
ID=49062976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310235192.XA Active CN103280493B (en) | 2013-06-14 | 2013-06-14 | A kind of crystal-silicon solar cell production technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103280493B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206705A (en) * | 2015-08-18 | 2015-12-30 | 广东爱康太阳能科技有限公司 | Low reflectivity solar crystalline silicon cell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6091021A (en) * | 1996-11-01 | 2000-07-18 | Sandia Corporation | Silicon cells made by self-aligned selective-emitter plasma-etchback process |
| CN101478013A (en) * | 2008-12-30 | 2009-07-08 | 无锡尚德太阳能电力有限公司 | Method for producing solar cell silicon wafer suede by reactive ion etching and solar cell produced thereby |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
-
2013
- 2013-06-14 CN CN201310235192.XA patent/CN103280493B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6091021A (en) * | 1996-11-01 | 2000-07-18 | Sandia Corporation | Silicon cells made by self-aligned selective-emitter plasma-etchback process |
| CN101478013A (en) * | 2008-12-30 | 2009-07-08 | 无锡尚德太阳能电力有限公司 | Method for producing solar cell silicon wafer suede by reactive ion etching and solar cell produced thereby |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206705A (en) * | 2015-08-18 | 2015-12-30 | 广东爱康太阳能科技有限公司 | Low reflectivity solar crystalline silicon cell and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103280493B (en) | 2016-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yoo et al. | Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE) | |
| WO2018209729A1 (en) | Tubular perc double-sided photovoltaic cell and method for fabrication thereof and dedicated device | |
| CN109980022A (en) | A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof | |
| Chen et al. | 0.76% absolute efficiency increase for screen-printed multicrystalline silicon solar cells with nanostructures by reactive ion etching | |
| CN109994553A (en) | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft | |
| CN201699033U (en) | Two-sided illuminated crystalline silicon solar battery | |
| CN109449248A (en) | A kind of preparation method of high efficiency SE-PERC solar battery | |
| TWI718703B (en) | Solar cell and manufacturing method thereof | |
| US20170294545A1 (en) | A process for preparing passivated emitter rear contact (perc) solar cells | |
| JP2006128258A (en) | Solar battery and method of manufacturing same | |
| CN109346536A (en) | A kind of contact passivation crystal silicon solar energy battery structure and preparation method | |
| CN102534547A (en) | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell | |
| CN101894880A (en) | Film solar battery module with transparence and process method thereof | |
| WO2012031388A1 (en) | In-situ preparation method for solar cell | |
| CN102364692A (en) | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof | |
| CN110350039A (en) | A kind of generating electricity on two sides solar battery and preparation method thereof | |
| CN109888060A (en) | A kind of solar cell and preparation method thereof with three layers of passivation layer structure | |
| Zhang et al. | A novel additive for rapid and uniform texturing on high-efficiency monocrystalline silicon solar cells | |
| CN202307914U (en) | Next-generation structure high-efficiency crystalline silicon battery | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| CN104362219A (en) | Crystalline solar cell production process | |
| CN102569497B (en) | Method for forming anti-reflecting film on base plate as well as solar cell and preparation method thereof | |
| CN206259371U (en) | A kind of porous silicon solar battery assembly | |
| CN109659399A (en) | A kind of preparation method of the small exposure mask solar battery of MWT | |
| Chen et al. | Improvement of conversion efficiency of multi-crystalline silicon solar cells using reactive ion etching with surface pre-etching |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ren Xiankun Inventor after: Chen Chong Inventor after: Yang Xiaojun Inventor after: Xu Zhenhua Inventor after: Jia Heshun Inventor after: Jiang Yansen Inventor before: Jia Heshun Inventor before: Jiang Yansen Inventor before: Ren Xiankun Inventor before: Xu Zhenhua Inventor before: Zhang Chunyan Inventor before: Ma Jilei |
|
| CB03 | Change of inventor or designer information |