CN103219642A - Hectowatt-level 2-micrometer solid laser generating device at room temperature - Google Patents
Hectowatt-level 2-micrometer solid laser generating device at room temperature Download PDFInfo
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- CN103219642A CN103219642A CN2013101381472A CN201310138147A CN103219642A CN 103219642 A CN103219642 A CN 103219642A CN 2013101381472 A CN2013101381472 A CN 2013101381472A CN 201310138147 A CN201310138147 A CN 201310138147A CN 103219642 A CN103219642 A CN 103219642A
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Abstract
The invention relates to a solid laser generating device, and discloses a hectowatt-level 2-micrometer solid laser generating device at room temperature. The problem that laser generator output power level is low caused by low uniformity of pumping light absorption of an existing single-terminal pumping 2- micrometer laser generator is solved. The hectowatt-level 2-micrometer solid laser generating device at the room temperature comprises four 1.9-micrometer laser generating devices, two 2-micrometer holophotes, an F-P etalon, a Q-switching crystal, an output coupling mirror and four isolating devices, wherein the 1.9-micrometer laser generating devices conduct dual end pumping on a 2-micrometer laser crystal, mixed light beams of 1.9 micrometers and 2 micrometers are generated after absorption of the 2-micrometer laser crystal, and light beams of 1.9 micrometers penetrate through the 2-micrometer holophotes, and light beams of 2 micrometers are reflected by the 2-micrometer holophotes. The light beams of 2 micrometers enter the Q-switching crystal after being reflected by the 2-micrometer holophotes and further tuned by the F-P etalon, enter the output coupling mirror through regulation of the Q-switching crystal, and are output through coupling of the output coupling mirror. The hectowatt-level 2-micrometer solid laser generating device at the room temperature is suitable for being used in the field of lasers.
Description
Technical field
The present invention relates to a kind of solid-state laser apparatus.
Background technology
The laser of 2 mu m wavebands is widely used, and relates to aspects such as environmental monitoring, infrared remote sensing, medical treatment and optical communication, especially can be in non-linear conversion realizes the laser output of infrared 3-5 μ m and far infrared 8-12 μ m.Using 1.9 μ m laser is the best-of-breed technology approach that obtains 2 μ m laser under the room temperature condition as the Ho solid state laser of singly mixing of pumping source.At present, singly mix the structure that the Ho laser adopts monocrystal and single terminal pumping substantially, to reach compact conformation, the small and exquisite purpose of volume.But single terminal pump mode has reduced laser crystal to the uniformity that pump light absorbs, and causes the imbalance of crystals heat distribution, brings harmful effect for the high power running of laser.Moreover the pumping light power that single laser crystal can bear is limited, has limited the more injection of high pumping power, causes the solid state laser of single terminal pumping can't reach 2 microns laser outputs of hectowatt grade.
Summary of the invention
The present invention is in order to solve 2 laser micrometers that have single terminal pumping now because the uniformity that pump light absorbs is low, cause the solid state laser of single-ended pumping can't reach 2 microns laser outputs of hectowatt grade, proposed 2 microns solid-state laser apparatus of hectowatt grade under the room temperature condition.
2 microns Solid State Laser generating meanss of hectowatt grade under the room temperature condition of the present invention, this Solid State Laser generating means is by 1.9 microns generating device of laser, a spacer assembly, 2 microns completely reflecting mirrors, No. two spacer assemblys, No. two 1.9 microns generating device of laser, 2 microns laser crystals, No. two 2 microns completely reflecting mirrors, No. three spacer assemblys, No. three 1.9 microns generating device of laser, No. two 2 microns laser crystals, No. three 2 microns completely reflecting mirrors, No. four spacer assemblys, No. four 1.9 microns generating device of laser, the F-P etalon, adjusting Q crystal and output coupling mirror are formed;
1.9 microns light beams of 1.9 microns generating device of laser emission are incident to 2 microns completely reflecting mirrors No. one after a spacer assembly transmission, be transmitted through 2 microns laser crystals No. one through 2 microns completely reflecting mirrors, after absorbing, 2 microns laser crystal produces 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors No. two, through 2 microns laser crystals of No. two 2 microns completely reflecting mirror reflected backs, after 2 microns laser crystal transmissions, be incident to 2 microns completely reflecting mirrors No. one, reflex to 2 microns laser crystals No. two through 2 microns completely reflecting mirrors, after No. two 2 microns laser crystal transmissions, be incident to 2 microns completely reflecting mirrors No. three, after No. three 2 microns completely reflecting mirrors reflections, be incident to the F-P etalon, after the F-P etalon is tuning, be incident to adjusting Q crystal; 2 microns light beams after the adjusting Q crystal modulation are incident to coupling mirror, output after the coupling mirror coupling;
1.9 microns light beams of No. two 1.9 microns generating device of laser emissions are incident to 2 microns completely reflecting mirrors No. one after No. two spacer assembly transmissions, be transmitted through 2 microns laser crystals No. two through 2 microns completely reflecting mirrors, after absorbing, No. two 2 microns laser crystals produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors No. three, reflex to the F-P etalon through No. three 2 microns completely reflecting mirrors, after the F-P etalon is tuning, be incident to adjusting Q crystal; 2 microns light beams after the adjusting Q crystal modulation are through being incident to coupling mirror, output after the coupling mirror coupling;
1.9 microns light beams of No. three 1.9 microns generating device of laser emissions are incident to 2 microns completely reflecting mirrors No. two after No. three spacer assembly transmissions, be transmitted through 2 microns laser crystals No. one through No. two 2 microns completely reflecting mirrors, after absorbing, 2 microns laser crystal produces 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors No. one, reflex to 2 microns laser crystals No. two through 2 microns completely reflecting mirrors, after No. two 2 microns laser crystal transmissions, be incident to 2 microns completely reflecting mirrors No. three, reflex to the F-P etalon through No. three 2 microns completely reflecting mirrors, after the F-P etalon is tuning, be incident to adjusting Q crystal; 2 microns light beams after the adjusting Q crystal modulation are incident to coupling mirror, output after the coupling mirror coupling;
1.9 microns light beams of No. four 1.9 microns generating device of laser emissions are transmitted through 2 microns completely reflecting mirrors No. three through No. four spacer assemblys, be transmitted through 2 microns laser crystals No. two through No. three 2 microns completely reflecting mirrors, after absorbing, No. two 2 microns laser crystals produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors No. one, reflex to 2 microns laser crystals No. one through 2 microns completely reflecting mirrors, be transmitted through 2 microns completely reflecting mirrors No. two through 2 microns laser crystals, 2 microns laser crystals of No. two 2 microns completely reflecting mirror reflected backs, after 2 microns laser crystal transmissions, be incident to 2 microns completely reflecting mirrors No. one, reflex to 2 microns laser crystals No. two through 2 microns completely reflecting mirrors, after No. two 2 microns laser crystal transmissions, be incident to 2 microns completely reflecting mirrors No. three, after No. three 2 microns completely reflecting mirrors, 1 reflections, be incident to the F-P etalon, after the F-P etalon is tuning, be incident to adjusting Q crystal; 2 microns light beams after the adjusting Q crystal modulation are through being incident to coupling mirror, output after the coupling mirror coupling;
The zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of 1.9 microns generating device of laser emission, No. two 1.9 microns generating device of laser emissions, No. three 1.9 microns generating device of laser emissions and No. four 1.9 microns generating device of laser emissions is synchronous.
The present invention adopts bicrystal and two terminal pumping configuration in the chamber, the uniformity that pump light absorbs improves more than 20% on year-on-year basis, compares generating device of laser power output level of the present invention is issued to hectowatt grade at normal temperature condition 2 μ m laser output with the laser of existing single terminal pumping.
Description of drawings
Fig. 1 is the structural representation of 2 microns Solid State Laser generating meanss of hectowatt grade under the room temperature condition of the present invention.
Embodiment
Embodiment one: present embodiment is described below in conjunction with Fig. 1,2 microns Solid State Laser generating meanss of hectowatt grade under the described room temperature condition of present embodiment, this Solid State Laser generating means is by 1.9 microns generating device of laser 1, a spacer assembly 2,2 microns completely reflecting mirrors 3, No. two spacer assemblys 4, No. two 1.9 microns generating device of laser 5,2 microns laser crystals 6, No. two 2 microns completely reflecting mirrors 7, No. three spacer assemblys 8, No. three 1.9 microns generating device of laser 9, No. two 2 microns laser crystals 10, No. three 2 microns completely reflecting mirrors 11, No. four spacer assemblys 12, No. four 1.9 microns generating device of laser 13, F-P etalon 14, adjusting Q crystal 15 and output coupling mirror 16 are formed;
1.9 microns light beams of 1.9 microns generating device of laser, 1 emission are incident to 2 microns completely reflecting mirrors 3 No. one after spacer assembly 2 transmissions, be transmitted through 2 microns laser crystals 6 No. one through 2 microns completely reflecting mirrors 3, after absorbing, 2 microns laser crystals 6 produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors 7 No. two, through 2 microns laser crystals 6 of No. two 2 microns completely reflecting mirrors, 7 reflected backs, after 2 microns laser crystal 6 transmissions, be incident to No. one 2 microns completely reflecting mirrors 3, reflex to 2 microns laser crystals 10 No. two through 2 microns completely reflecting mirrors 3, after No. two 2 microns laser crystal 10 transmissions, be incident to No. three 2 microns completely reflecting mirrors 11, after 11 reflections of No. three 2 microns completely reflecting mirrors, be incident to F-P etalon 14, after F-P etalon 14 is tuning, be incident to adjusting Q crystal 15; 2 microns light beams after adjusting Q crystal 15 modulation are incident to coupling mirror 16, output after coupling mirror 16 couplings;
1.9 microns light beams of No. two 1.9 microns generating device of laser, 5 emissions are incident to 2 microns completely reflecting mirrors 3 No. one after No. two spacer assembly 4 transmissions, be transmitted through 2 microns laser crystals 10 No. two through 2 microns completely reflecting mirrors 3, after absorbing, No. two 2 microns laser crystals 10 produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors 11 No. three, reflex to F-P etalon 14 through No. three 2 microns completely reflecting mirrors 11, after F-P etalon 14 is tuning, be incident to adjusting Q crystal 15; 2 microns light beams after adjusting Q crystal 15 modulation are through being incident to coupling mirror 16, output after coupling mirror 16 couplings;
1.9 microns light beams of No. three 1.9 microns generating device of laser, 9 emissions are incident to 2 microns completely reflecting mirrors 7 No. two after No. three spacer assembly 8 transmissions, be transmitted through 2 microns laser crystals 6 No. one through No. two 2 microns completely reflecting mirrors 7, after absorbing, 2 microns laser crystals 6 produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors 3 No. one, reflex to 2 microns laser crystals 10 No. two through 2 microns completely reflecting mirrors 3, after No. two 2 microns laser crystal 10 transmissions, be incident to No. three 2 microns completely reflecting mirrors 11, reflex to F-P etalon 14 through No. three 2 microns completely reflecting mirrors 11, after F-P etalon 14 is tuning, be incident to adjusting Q crystal 15; 2 microns light beams after adjusting Q crystal 15 modulation are incident to coupling mirror 16, output after coupling mirror 16 couplings;
1.9 microns light beams of No. four 1.9 microns generating device of laser, 13 emissions are transmitted through 2 microns completely reflecting mirrors 11 No. three through No. four spacer assemblys 12, be transmitted through 2 microns laser crystals 10 No. two through No. three 2 microns completely reflecting mirrors 11, after absorbing, No. two 2 microns laser crystals 10 produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors 3 No. one, reflex to 2 microns laser crystals 6 No. one through 2 microns completely reflecting mirrors 3, be transmitted through 2 microns completely reflecting mirrors 7 No. two through 2 microns laser crystals 6,2 microns laser crystals 6 of No. two 2 microns completely reflecting mirrors, 7 reflected backs, after 2 microns laser crystal 6 transmissions, be incident to No. one 2 microns completely reflecting mirrors 3, reflex to 2 microns laser crystals 10 No. two through 2 microns completely reflecting mirrors 3, after No. two 2 microns laser crystal 10 transmissions, be incident to No. three 2 microns completely reflecting mirrors 11, after 11 reflections of No. three 2 microns completely reflecting mirrors, be incident to F-P etalon 14, after F-P etalon 14 is tuning, be incident to adjusting Q crystal 15; 2 microns light beams after adjusting Q crystal 15 modulation are through being incident to coupling mirror 16, output after coupling mirror 16 couplings;
The zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of 1.9 microns generating device of laser, 1 emission, No. two 1.9 microns generating device of laser, 5 emissions, No. three 1.9 microns generating device of laser, 9 emissions and No. four 1.9 microns generating device of laser, 13 emissions is synchronous.
Embodiment two: present embodiment is that 2 microns Solid State Laser generating meanss of execution mode one described high light beam quality hectowatt grade are described further, and a described spacer assembly 2, No. two spacer assemblys 4, No. three spacer assemblys 8 and No. four spacer assemblys 12 are optical isolator.
Embodiment three: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under the embodiment one described room temperature condition are described further, and a described spacer assembly 2, No. two spacer assemblys 4, No. three spacer assemblys 8 and No. four spacer assemblys 12 are polarizer.
Embodiment four: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under embodiment one, embodiment two or the embodiment three described room temperature conditions are described further, and described adjusting Q crystal 15 is the acousto-optic Q modulation crystal.
Embodiment five: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under embodiment one embodiment two or the embodiment three described room temperature conditions are described further, and described adjusting Q crystal 15 is electric-optically Q-switched crystal.
Embodiment six: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under embodiment one, embodiment two or the embodiment three described room temperature conditions are described further, and the thickness of described tuning F-P etalon 14 is 0.1mm.
Embodiment seven: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under embodiment one, embodiment two or the embodiment three described room temperature conditions are described further, and the material of described tuning F-P etalon 14 is YAG.
Embodiment eight: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under embodiment one, embodiment two or the embodiment three described room temperature conditions are described further, and the material of described tuning F-P etalon 14 is quartzy.
Embodiment nine: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under the embodiment six described room temperature conditions are described further, and described 2 microns laser crystal 6 and No. two 2 microns laser crystals 10 are singly mixes the Ho crystal.
Present embodiment is selected for use and is singly mixed the Ho crystal as gain medium, singly mix the Ho crystal and strong absworption peak is arranged at 1.9 mu m wavebands, therefore select for use the 1.9 μ m laser that are complementary with Ho crystal absworption peak as the pumping source of singly mixing the Ho laser, cavity resonator structure is a refrative cavity, two Ho crystal of folding series connection in the chamber, each Ho crystal all has two 1.9 μ m laser to the terminal pumping of its pair, significantly improve the injecting power of 1.9 μ m laser, improve the heat distribution of crystals, thereby realize the high power 2 μ m laser output of high light beam quality.
Embodiment ten: present embodiment is that 2 microns Solid State Laser generating meanss of hectowatt grade under the embodiment nine described room temperature conditions are described further, and singly mixes the Ho of Ho crystal
3+Concentration is 0.8%, singly mixes the length 60mm of Ho crystal.
When the power of mixing Ho crystal injection pumping laser is 180W, output obtains the stable 2 μ m laser output of 114W, and the laser optical light conversion efficiency reaches 63.5%.When the adjusting Q crystal repetition rate was 50kHz, obtaining average power was the pulse output laser of 111W, the beam quality factor M under the peak power output level
2Value is about 1.9.
Claims (10)
1. 2 microns Solid State Laser generating meanss of hectowatt grade under the room temperature condition, it is characterized in that this Solid State Laser generating means is by 1.9 microns generating device of laser (1), a spacer assembly (2), 2 microns completely reflecting mirrors (3), No. two spacer assemblys (4), No. two 1.9 microns generating device of laser (5), 2 microns laser crystals (6), No. two 2 microns completely reflecting mirrors (7), No. three spacer assemblys (8), No. three 1.9 microns generating device of laser (9), No. two 2 microns laser crystals (10), No. three 2 microns completely reflecting mirrors (11), No. four spacer assemblys (12), No. four 1.9 microns generating device of laser (13), F-P etalon (14), adjusting Q crystal (15) and output coupling mirror (16) are formed;
1.9 microns light beams of 1.9 microns generating device of laser (1) emission are incident to 2 microns completely reflecting mirrors (3) after a spacer assembly (2) transmission, be transmitted through 2 microns laser crystals (6) through 2 microns completely reflecting mirrors (3), after absorbing, 2 microns laser crystals (6) produce 2 microns light beams, these 2 microns light beams are incident to No. two 2 microns completely reflecting mirrors (7), through No. two 2 microns completely reflecting mirrors (7) 2 microns laser crystals of reflected back (6), after 2 microns laser crystals (6) transmission, be incident to 2 microns completely reflecting mirrors (3), reflex to No. two 2 microns laser crystals (10) through 2 microns completely reflecting mirrors (3), after No. two 2 microns laser crystals (10) transmission, be incident to No. three 2 microns completely reflecting mirrors (11), after No. three 2 microns completely reflecting mirrors (11) reflection, be incident to F-P etalon (14), after F-P etalon (14) is tuning, be incident to adjusting Q crystal (15); 2 microns light beams after adjusting Q crystal (15) modulation are incident to coupling mirror (16), output after coupling mirror (16) coupling;
1.9 microns light beams of No. two 1.9 microns generating device of laser (5) emission are incident to 2 microns completely reflecting mirrors (3) after No. two spacer assemblys (4) transmission, be transmitted through No. two 2 microns laser crystals (10) through 2 microns completely reflecting mirrors (3), after absorbing, No. two 2 microns laser crystals (10) produce 2 microns light beams, these 2 microns light beams are incident to No. three 2 microns completely reflecting mirrors (11), reflex to F-P etalon (14) through No. three 2 microns completely reflecting mirrors (11), after F-P etalon (14) is tuning, be incident to adjusting Q crystal (15); 2 microns light beams after adjusting Q crystal (15) modulation are through being incident to coupling mirror (16), output after coupling mirror (16) coupling;
1.9 microns light beams of No. three 1.9 microns generating device of laser (9) emission are incident to No. two 2 microns completely reflecting mirrors (7) after No. three spacer assemblys (8) transmission, be transmitted through 2 microns laser crystals (6) through No. two 2 microns completely reflecting mirrors (7), after absorbing, 2 microns laser crystals (6) produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors (3), reflex to No. two 2 microns laser crystals (10) through 2 microns completely reflecting mirrors (3), after No. two 2 microns laser crystals (10) transmission, be incident to No. three 2 microns completely reflecting mirrors (11), reflex to F-P etalon (14) through No. three 2 microns completely reflecting mirrors (11), after F-P etalon (14) is tuning, be incident to adjusting Q crystal (15); 2 microns light beams after adjusting Q crystal (15) modulation are incident to coupling mirror (16), output after coupling mirror (16) coupling;
1.9 microns light beams of No. four 1.9 microns generating device of laser (13) emission are transmitted through No. three 2 microns completely reflecting mirrors (11) through No. four spacer assemblys (12), be transmitted through No. two 2 microns laser crystals (10) through No. three 2 microns completely reflecting mirrors (11), after absorbing, No. two 2 microns laser crystals (10) produce 2 microns light beams, these 2 microns light beams are incident to 2 microns completely reflecting mirrors (3), reflex to 2 microns laser crystals (6) through 2 microns completely reflecting mirrors (3), be transmitted through No. two 2 microns completely reflecting mirrors (7) through 2 microns laser crystals (6), No. two 2 microns completely reflecting mirrors (7) 2 microns laser crystals of reflected back (6), after 2 microns laser crystals (6) transmission, be incident to 2 microns completely reflecting mirrors (3), reflex to No. two 2 microns laser crystals (10) through 2 microns completely reflecting mirrors (3), after No. two 2 microns laser crystals (10) transmission, be incident to No. three 2 microns completely reflecting mirrors (11), after No. three 2 microns completely reflecting mirrors (11) reflection, be incident to F-P etalon (14), after F-P etalon (14) is tuning, be incident to adjusting Q crystal (15); 2 microns light beams after adjusting Q crystal (15) modulation are through being incident to coupling mirror (16), output after coupling mirror (16) coupling;
The zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of the zero-time of 1.9 microns light beams of 1.9 microns generating device of laser (1) emission, No. two 1.9 microns generating device of laser (5) emission, No. three 1.9 microns generating device of laser (9) emission and No. four 1.9 microns generating device of laser (13) emission is synchronous.
2. 2 microns Solid State Laser generating meanss of hectowatt grade is characterized in that under the room temperature condition according to claim 1, and a described spacer assembly (2), No. two spacer assemblys (4), No. three spacer assemblys (8) and No. four spacer assemblys (12) are optical isolator.
3. 2 microns Solid State Laser generating meanss of hectowatt grade is characterized in that under the room temperature condition according to claim 1, and a described spacer assembly (2), No. two spacer assemblys (4), No. three spacer assemblys (8) and No. four spacer assemblys (12) are polarizer.
4. according to 2 microns Solid State Laser generating meanss of hectowatt grade under claim 1, the 2 or 3 described room temperature conditions, it is characterized in that described adjusting Q crystal (15) is the acousto-optic Q modulation crystal.
5. according to 2 microns Solid State Laser generating meanss of hectowatt grade under claim 1, the 2 or 3 described room temperature conditions, it is characterized in that described adjusting Q crystal (15) is electric-optically Q-switched crystal.
6. according to 2 microns Solid State Laser generating meanss of hectowatt grade under claim 1, the 2 or 3 described room temperature conditions, it is characterized in that the thickness of described tuning F-P etalon (14) is 0.1mm.
7. according to 2 microns Solid State Laser generating meanss of hectowatt grade under claim 1, the 2 or 3 described room temperature conditions, it is characterized in that the material of described tuning F-P etalon (14) is YAG.
8. according to 2 microns Solid State Laser generating meanss of hectowatt grade under claim 1, the 2 or 3 described room temperature conditions, it is characterized in that the material of described tuning F-P etalon (14) is quartzy.
9. 2 microns Solid State Laser generating meanss of hectowatt grade is characterized in that under the room temperature condition according to claim 6, and described 2 microns laser crystal (6) and No. two 2 microns laser crystals (10) are singly mixes the Ho crystal.
10. 2 microns Solid State Laser generating meanss of hectowatt grade is characterized in that under the room temperature condition according to claim 7, singly mix the Ho crystal Ho
3+Concentration is 0.8at.%, mixes the length 60mm of Ho crystal.
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| CN107666106A (en) * | 2017-10-18 | 2018-02-06 | 哈尔滨工业大学 | A kind of 2 microns of Solid State Laser generating means of hectowatt grade |
| CN107908207A (en) * | 2017-11-23 | 2018-04-13 | 黑龙江工程学院 | A kind of automatic temperature-controlled automatic light modulating method of solid-state laser apparatus |
| CN107968305A (en) * | 2017-11-23 | 2018-04-27 | 黑龙江工程学院 | A kind of four ends pump narrow spaces Solid State Laser generating means |
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| CN107666106A (en) * | 2017-10-18 | 2018-02-06 | 哈尔滨工业大学 | A kind of 2 microns of Solid State Laser generating means of hectowatt grade |
| CN107908207A (en) * | 2017-11-23 | 2018-04-13 | 黑龙江工程学院 | A kind of automatic temperature-controlled automatic light modulating method of solid-state laser apparatus |
| CN107968305A (en) * | 2017-11-23 | 2018-04-27 | 黑龙江工程学院 | A kind of four ends pump narrow spaces Solid State Laser generating means |
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Application publication date: 20130724 |