CN103193190B - A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof - Google Patents
A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof, for infrared detection with terahertz wave band and imaging.The top layer of described micro-bridge structure is double-deck vanadium oxide film, lower floor's vanadium oxide film for have high temperature coefficient of resistance (TCR) without phase transformation vanadium oxide film, as the infrared sensitive layer with terahertz wave band, upper strata vanadium oxide film has lower phase transition temperature, the reversible transition of semiconductor phase-Metal Phase can be there is, semiconductor phase time is used as infrared absorption layer together with lower floor vanadium oxide film, is used as terahertz emission absorbed layer after becoming Metal Phase mutually.Utilize the resonance of micro-bridge structure fully can absorb infra-red radiation, regulate the photoelectric parameter such as electrical conductivity, refractive index of Metal Phase vanadium oxide film, the maximization that terahertz emission is absorbed can be realized again.This micro-bridge structure can realize two waveband detection and imaging, and preparation technology is simple, compatible with MEMS technology, has broad application prospects.
Description
Technical field
The present invention relates to infrared with terahertz detection and technical field of imaging, be specifically related to a kind of micro-bridge structure for infrared-Terahertz two waveband detector array and preparation method thereof.
Background technology
Infrared detection technique, as supplementing and expansion human sensory, is widely used in civil and military.The photon detector of current comparative maturity has been applied to the fields such as communication, medical science, military affairs, but must freeze because of during its work, causes whole system huge, complex structure and high expensive, thus cannot apply on a large scale.The development of large scale integrated circuit technology makes the development of non-refrigerated infrared detector become possibility.Current un-cooled infrared focal plane array (IRFPA) technology has become the direction of the most main flow of infrared detection technique, and this technology makes us just can obtain the Infrared Detectors with very hypersensitivity energy at normal temperatures.In addition, the lot of advantages such as its cost is low, volume is little, lightweight, power consumption is little and response wave band is wide, makes its large-scale marketization become possibility.
The mainstream technology of current non-refrigerated infrared focal plane probe is thermistor-type microbolometer.Realize the infrared acquisition under room temperature, the design of detecting structure is the key of non-refrigerating infrared focal plane device.Micro-bridge structure is a kind of typical detecting structure.Adopt photoetching method on sacrifice layer, produce supporting layer and sensitive layer pattern and finally remove the method for sacrifice layer, a freestanding thermal isolation micro-bridge structure can be formed.Microbridge is made up of bridge pier, bridge leg and bridge floor, and be produced on the substrate with reading circuit, bridge pier supports bridge leg and bridge floor, make bridge leg and bridge floor unsettled, infrared absorption layer and thermosensitive film are deposited on bridge floor.When devices function, the lens adopting germanium to make are collected on the sensing element array that to be radiated with focused IR and to be positioned in optical system focal plane, the change of Target Infrared Radiation is detected by the infrared acquisition film on bridge floor, be reflected to the change of thermosensitive film temperature and resistance, by the electricity passage be produced in microbridge, this change is delivered to substrate reading circuit, be reduced into image information, realize the detection to echo signal.In order to make full use of the infra-red radiation of object, usually bottom sacrifice layer, increase one deck catoptric arrangement to improve the absorption of sensitive layer to infra-red radiation, it has been generally acknowledged that the microcavity assimilation effect that sensitive layer and reflecting layer distance are formed when being 1/4 of directs light wavelength is best.
According to the difference of the thermistor material used, non-refrigerated infrared focal plane probe can be divided into vanadium oxide (VO
x) detector and amorphous silicon detector two kinds.Vanadium oxide technology is researched and developed successfully in the early 1990s by the Honeywell company of the U.S., and its license BAE, L-3/IR, FLIR-INDIGO, DRS, NEC and SCD Deng Ji company produces at present.Amorphous silicon technology is researched and developed successfully primarily of the CEA/LETI/LIR laboratory of France in late nineteen nineties, SOFRADIR and the ULIS company at present primarily of France produces.Vanadium oxide is very sensitive to room temperature resistance variations in temperature, larger temperature-coefficient of electrical resistance (TCR can be obtained, Yi Ban Wei – 2%/K ~ – 3%/K), resistance value can be controlled in several kilo-ohms to several ten thousand Europe, 1/f noise is lower, film deposition techniques is ripe simultaneously, is the thermistor material of current no-refrigeration infrared focal plane detector first-selection.The companies such as Raytheon, BAE, DRS, Indigo, NEC and SCD can produce the vanadium oxide no-refrigeration infrared focal plane detector of 160 × 120 ~ 640 × 480 arrays, and its noise equivalent temperature difference (NETD) is 20 ~ 100mK.At present, the extensive vanadium oxide no-refrigeration infrared focal plane detector that 1024 × 1024 arrays are all being studied by BAE and DRS company, pixel dimension 15 μm, NETD are 50mK.
Terahertz (Terahertz, THz) ripple refers to that frequency is between electromagnetic radiation m) of 0.1 ~ 10THz(wavelength 3mm ~ 30, and its electromagnetic spectrum is between microwave and infrared band.Therefore, Terahertz system takes into account the advantage of electronics and optical system.For a long time, produce and detection method owing to lacking effective terahertz emission, people are very limited for the understanding of this wave band properties of electromagnetic radiation, so that this wave band is called as the Terahertz space in electromagnetic spectrum.This wave band is also last frequency window having pending comprehensive research in electromagnetic spectrum.With the electromagnetic wave phase ratio of other wave band, terahertz electromagnetic wave has following unique character: 1. transient state: the typical pulse-widths of terahertz pulse is at picosecond magnitude; 2. broadband property: terahertz pulse source only comprises the electromagnetic viscosimeter in several cycles usually, the frequency band of individual pulse can cover the scope of GHz to tens THz; 3. coherence: the coherent measurement technology of terahertz time-domain spectroscopic technology directly can measure amplitude and the phase place of Terahertz electric field, can extract refractive index, the absorption coefficient of sample easily; 4. low energy: the energy of Terahertz photon only has milli electron-volt, can not destroy tested substance, thus can carry out the diagnosis and detection of biomedical aspect safely because of ionization; 5. penetrability: terahertz emission is for a lot of nonpolar megohmite insulant, and the packaging material such as such as hardboard, plastics, yarn fabric have very high through characteristic, can be used for detecting concealing object.These features of THz wave make it in image objects, environmental monitoring, medical diagnosis, radio astronomy, broadband mobile communication, especially in satellite communication and military radar etc., have great scientific value and wide application prospect.In recent years due to the development of free electron laser and ultrafast laser technique, the generation for terahertz pulse provides stable, reliable excitation source, the research of the mechanism of production of terahertz emission, detection technique and application technology is obtained flourish.
Terahertz detector is the Primary Component of Terahertz Technology application.In the development and application of terahertz detector, detect terahertz emission signal and there is very important meaning.Traditional un-cooled infrared focal plane array structure, may be used for detection and the imaging of terahertz wave band in theory.Theoretical according to 1/4 wavelength, for radiation frequency 3THz, for fully absorbing terahertz emission, the optical resonantor height of un-cooled infrared focal plane array should be 25 μm (1/4 wavelength of incident radiation).But such resonator height is difficult to realize (the resonator height of traditional un-cooled infrared focal plane array is about 1.5 ~ 3 μm) in the preparation of device.If do not change resonator height, its film structure is extremely low to the absorption of terahertz emission, makes the difficulty of signal detection larger.At document (F. Simoens, etc, " Terahertz imaging with a quantum cascade laser and amorphous-silicon microbolometer array ", Proceedings of SPIE, vol. 7485, pp. 74850M-1 – 74850M-9,2009) in, un-cooled infrared focal plane array based on non-crystalline silicon is used for terahertz imaging, and measure through simulation and experiment, the terahertz emission absorptivity of probe unit is only 0.16 ~ 0.17%.Therefore, solution conventional is at present: keep the resonator height of un-cooled infrared focal plane array constant, increases the special terahertz emission absorbed layer of one deck on the top layer of film structure, to realize detection and the imaging of terahertz emission.Alan W. M. Lee etc. reports that employing 160 × 120 un-cooled infrared focal plane array carries out in real time, continuously THz wave imaging.Sensitive material is be positioned at the vanadium oxide film on silicon nitride microbridge.They propose, for improving signal to noise ratio and spatial resolution, need improve the design of focal plane arrays (FPA), terahertz emission absorbing material (Alan W. M. Lee, etc are optimized in groundwork wherein, " Real-time; continuous-wave terahertz imaging by use of a microbolometer focal-plane array ", Optics Letters, vol. 30, pp. 2563 – 2565,2005).
Thin metal or metal composite thin film can absorb terahertz emission, and thickness is very little lower than the thermal capacitance impact of thickness on detector of 50nm simultaneously, is beneficial to the making of high speed of response probe unit, is commonly used for the absorbed layer of Terahertz microarray detector.N. Oda etc. adopt 320 × 240 and 640 × 480 un-cooled infrared focal plane arrays based on vanadium oxide thermosensitive film to carry out the detection of terahertz emission.Because the absorptivity of original film structure to terahertz emission is only 2.6 ~ 4%.Therefore, they increase one deck at the top layer of film structure and have the metallic film of suitable square resistance as terahertz emission absorbed layer, noise equivalent power when being 3THz by frequency of incident radiation is down to 40pW(N. Oda, etc, " Detection of terahertz radiation from quantum cascade laser using vanadium oxide microbolometer focal plane arrays ", Proceedings of SPIE, vol. 6940, pp. 69402Y-1 – 69402Y-12,2008).Metallic film is used as terahertz emission absorbed layer at document (L. Marchese, etc, " A microbolometer-based THz imager ", Proceedings of SPIE, vol. 7671, pp. 76710Z-1 – 76710Z-8,2010) also there is report in, terahertz emission can be absorbed by the thickness optimizing metal absorption layer and maximize.
In bibliographical information, increase layer of metal film as after terahertz emission absorbed layer, un-cooled infrared focal plane array may be used for detection and the imaging of terahertz wave band.But in probe unit, adopt double-deck vanadium oxide film to be used as infrared absorption with terahertz wave band and sensitive layer, there is not been reported with imaging to utilize the reversible transition of upper strata vanadium oxide film to realize two waveband detection, also do not have the application of related invention patent simultaneously.
Summary of the invention
Problem to be solved by this invention is: how to provide a kind of micro-bridge structure for infrared-Terahertz two waveband detector array, this micro-bridge structure can realize detection and the imaging of infrared-Terahertz two waveband.
Technical problem proposed by the invention solves like this: provide a kind of micro-bridge structure for infrared-Terahertz two waveband detector array, it is characterized in that: comprise substrate 10, drive circuit 20, sacrifice layer 30, described drive circuit is arranged over the substrate 10, and this drive circuit 20 is provided with circuit interface 21; Described sacrifice layer 30 is prepared in this with on the substrate of drive circuit, and on drive circuit, from bottom to top preparation has cushion 40, supporting layer 50, top electrodes 60 successively, and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top preparation has lower floor's vanadium oxide film and upper strata vanadium oxide film successively.
In the present invention, described lower floor vanadium oxide film be have high temperature coefficient of resistance without phase transformation vanadium oxide film, as the infrared sensitive layer with terahertz wave band,
In the present invention, can there is the reversible transition of semiconductor phase-Metal Phase in described upper strata vanadium oxide film, for semiconductor phase time is used as infrared absorption layer together with lower floor vanadium oxide film; For being used as terahertz emission absorbed layer after Metal Phase.
In the present invention, the phase transition temperature of described upper strata vanadium oxide film is 20 ~ 60 DEG C, and thickness is 5 ~ 100nm; The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of described lower floor vanadium oxide film, thickness is 30 ~ 200nm.
In the present invention, after the release of described sacrifice layer, the position of former sacrifice layer forms resonator, this resonator height be 1.5 ~ 3 μm (about infrared radiation wavelength 1/4), fully to absorb the target emanation of infrared band.
In the present invention, described sacrificial layer material is the one in polyimides, silica, the porous silicon of oxidation and phosphorosilicate glass.
Described supporting layer is made up of single thin film or is made up of plural layers, and material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μm.
Described cushioning layer material is metal or metal alloy or nonmetallic materials; Described top electrodes layer material is their alloy of aluminium, tungsten, titanium, platinum, nickel, chromium or any one.
According to the preparation method of micro-bridge structure provided by the present invention, it is characterized in that, comprise the following steps:
1. also graphical at the Grown sacrifice layer with drive circuit, make the section configuration of sacrifice layer pattern edge present trapezoid shape, expose the circuit interface of drive circuit;
2. on the substrate of existing sacrifice layer pattern, cushion pattern is prepared;
3. on the device of step 2. gained, prepare supporting layer, and form supporting layer pattern by photoetching process, expose electrode interface;
4. on the device of step 3. gained, prepare top electrode layer, and form top electrodes layer pattern by photoetching process, require that top electrode layer is electrically connected with electrode interface;
5. on the substrate preparing top electrode layer, preparation is used as lower floor's vanadium oxide film of sensitive layer and it is graphical;
6. preparation has the upper strata vanadium oxide film of low transformation temperature and it is graphical;
7. releasing sacrificial layer, forms micro-bridge structure, then carries out encapsulation and forms probe unit.
Lower floor's vanadium oxide film as sensitive layer adopts magnetron sputtering method preparation; Controlling sputtering power during sputtering is 100 ~ 500W, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 DEG C.
The upper strata vanadium oxide film with low transformation temperature adopts magnetron sputtering method preparation; The element adulterated during preparation is titanium, molybdenum, tungsten etc., and doping content is 0.1 ~ 10%; Control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 DEG C.
Compared with prior art, the present invention has following beneficial effect:
The present invention adopts double-deck vanadium oxide film to be used as infrared absorption with terahertz wave band and sensitive layer simultaneously, utilizes the reversible transition of upper strata vanadium oxide film to realize two waveband detection and imaging, and preparation technology's advantages of simple.
Accompanying drawing explanation
In Fig. 1, a ~ h is the simple and easy preparation flow of micro-bridge structure of the present invention, wherein Fig. 1-a is the substrate with bottom drive circuit, Fig. 1-b is the substrate preparing sacrifice layer figure, Fig. 1-c is the substrate preparing cushion figure, Fig. 1-d is the substrate preparing supporting layer figure, Fig. 1-e is the substrate preparing top electrodes layer pattern, 1-f is the substrate preparing lower floor's vanadium oxide film figure, 1-g is the substrate preparing upper strata vanadium oxide film figure, and 1-h is the device architecture generalized section after dischargeing sacrifice layer;
Fig. 2 is the change curve of the electrical resistance temperature of lower floor's vanadium oxide film in embodiments of the invention 2;
Fig. 3 is the change curve of the embodiments of the invention 2 electrical resistance temperature of vanadium oxide film at the middle and upper levels;
Reference numeral: 10 be substrate, 20 be drive circuit, 21 be circuit interface, 30 be sacrifice layer, 40 be cushion, 50 be supporting layer, 60 be top electrode layer, 70 be lower floor's vanadium oxide film, 80 for upper strata vanadium oxide film.
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the invention will be further described:
The invention provides a kind of micro-bridge structure for infrared-Terahertz two waveband detector array, it is characterized in that: comprise substrate 10, drive circuit 20, sacrifice layer 30, described drive circuit is arranged over the substrate 10, and this drive circuit 20 is provided with circuit interface 21; Described sacrifice layer 30 is prepared in this with on the substrate of drive circuit, and on drive circuit, from bottom to top preparation has cushion 40, supporting layer 50, top electrodes 60 successively, and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top preparation has lower floor's vanadium oxide film and upper strata vanadium oxide film successively.
The preparation flow of micro-bridge structure of the present invention comprises: with the preparation substrate 10 of drive circuit 20 carrying out sacrifice layer 30, and forms sacrifice layer pattern by photoetching process, and the sacrifice layer pattern formed will expose bottom circuit interface 21; Prepare cushion 40 pattern; Prepare supporting layer 50, and form supporting layer pattern by photoetching process, expose electrode interface 21; Prepare top electrode layer 60, and form top metal electrode pattern by photoetching process, require that top electrodes is connected with electrode interface 21; Preparation is used as lower floor's vanadium oxide film 70 of sensitive layer and it is graphical; Preparation is used as the upper strata vanadium oxide film 80 of absorbed layer and it is graphical; After releasing sacrificial layer, formed infrared with terahertz emission probe unit.
In micro-bridge structure, resonator height be 1.5 ~ 3 μm (about infrared radiation wavelength 1/4), fully to absorb the target emanation of infrared band; Described sacrificial layer material is the porous silicon, phosphorosilicate glass etc. of polyimides, silica, oxidation, and sacrifice layer can bombard with oxygen plasma, reactive ion etching or remove with chemical reagent.Backing material requires that it has the stability of certain rigidity guarantee micro-bridge structure, there is low stress and ensure that microbridge is less by thermal deformation, select the lower material of heat transfer to prepare bridge floor simultaneously as far as possible, described supporting layer is made up of single thin film or is made up of plural layers, material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μm.The object arranging cushion is the difference in height weakened between circuit interface and top electrode layer, and to facilitate bottom circuit and the connection of top metal wires, described cushioning layer material is metal or metal alloy or nonmetallic materials; Described top electrodes layer material is their alloy of aluminium, tungsten, titanium, platinum, nickel, chromium or any one.
Lower floor's vanadium oxide film be have high temperature coefficient of resistance without phase transformation vanadium oxide film, as the infrared sensitive layer with terahertz wave band, adopt magnetron sputtering method preparation.Controlling sputtering power during sputtering is 100 ~ 500W, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 DEG C.The temperature-coefficient of electrical resistance of the vanadium oxide film of preparation is – 2%/K ~ – 6%/K, and thickness is 30 ~ 200nm.
Upper strata vanadium oxide film has low transformation temperature, and the reversible transition of semiconductor phase-Metal Phase can occur, and semiconductor phase time is used as infrared absorption layer together with lower floor vanadium oxide film, is used as terahertz emission absorbed layer after becoming Metal Phase mutually.Excited the reversible transition of upper strata vanadium oxide film by methods such as additional heat, bias voltages, regulate the photoelectric parameters such as the electrical conductivity of its Metal Phase, refractive index, the maximization that terahertz emission is absorbed can be realized.Described upper strata vanadium oxide film adopts magnetron sputtering method preparation.Low transformation temperature is obtained by doping.The element adulterated during preparation is titanium, molybdenum, tungsten etc., and doping content is 0.1 ~ 10%.Control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 DEG C.The phase transition temperature of the vanadium oxide film of preparation is 20 ~ 60 DEG C, and thickness is 5 ~ 100nm.
The present invention will be further described by the following examples:
Embodiment 1
For a micro-bridge structure for infrared-Terahertz two waveband detector array, its preparation flow as shown in Figure 1.
This micro-bridge structure launches on the substrate 10 preparing bottom drive circuit 20, and drive circuit 20 has reserved circuit interface 21, as shown in Fig. 1-a.
Cleaning substrate surface, removes surface contamination, and carries out 200 to substrate
otoast under C, to remove the steam on surface, strengthen adhesive property.Carry out the coating of light-sensitive polyimide (sacrifice layer) with automatic glue application track, carry out by rotating speed the thickness regulating Kapton, 120 are carried out to the light-sensitive polyimide of coating
obaking under C, with the solvent in remove portion glue, is beneficial to the neat of exposure lines.Adopt NIKON litho machine to carry out exposure process to light-sensitive polyimide, the substrate through overexposure is delivered to development track automatically and is carried out the development of glue, and developer solution is the developer for positive photoresist TMAH of standard.Light-sensitive polyimide figure after development presents bridge pier sectional hole patterns, as shown in Fig. 1-b.Be placed on by Kapton subsequently in the annealing oven of blanketing with inert gas and carry out imidization process, imidization temperature is set to stage rising, and maximum temperature is 250
oc ~ 400
oc, constant temperature time is 30 ~ 120min, and the polyimide thickness after imidization is within the scope of 1.5 ~ 3 μm.
AZ5214 photoresist is adopted to carry out the preparation of metallic aluminium cushion figure.First by AZ5214 photoresist rotary coating at substrate surface, then carry out mask exposure, exposed rear hot plate bake (110
oc, 1.5min) allow the glue of exposed portion change, then carry out general exposure process, then development obtains the pattern needing stripping.Adopt magnetron sputtering method to prepare metallic aluminium film, the thickness of aluminium film is within the scope of 0.3 ~ 1.5 μm.Then under ultrasound condition, the stripping of photoresist is carried out with acetone soln.At the unilateral aluminium cushion figure stayed as shown in fig 1-c after stripping.
Adopt PECVD device and mixing sputtering technology to make the silicon nitride support layer of low stress, prepare the thickness range of silicon nitride layer within the scope of 0.2 ~ 1 μm.Then photoetching and etching are carried out to this layer film, etch the figure supporting bridge floor.The visuals aluminium coating cushion pattern of this layer of silicon nitride at bridge pier place, as shown in Fig. 1-d.
AZ5214 photoresist is adopted to carry out the preparation of NiCr top electrodes figure.First by AZ5214 photoresist rotary coating at the substrate surface having prepared substrate supports layer, then carry out mask exposure, with hot plate bake (110 after having exposed
oc, 1.5min) allow the glue of exposed portion change, then carry out general exposure process, then development obtains the pattern needing stripping.Adopt magnetron sputtering method to prepare NiCr film, the thickness of NiCr film is within the scope of 0.05 ~ 0.3 μm.Then under ultrasound condition, the stripping of photoresist is carried out with acetone soln.At the unilateral NiCr electrode pattern stayed as shown in Fig. 1-e after stripping.This figure is connected with bottom circuit interface.
After preparing contact conductor, then prepare lower floor's vanadium oxide film as sensitive layer that is infrared and terahertz wave band with sputtering equipment.Controlling sputtering power during sputtering is 100 ~ 500W, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 DEG C.The temperature-coefficient of electrical resistance of the vanadium oxide film of preparation is – 2%/K ~ – 6%/K, and thickness is 30 ~ 200nm.Then photoetching and etching are carried out to this layer of vanadium oxide film, etch the lower floor's vanadium oxide film figure as shown in Fig. 1-f.
After preparing lower floor's vanadium oxide film, then prepare upper strata vanadium oxide film as absorbed layer that is infrared and terahertz wave band with sputtering equipment.Obtain low transformation temperature by doping, the element of doping is titanium, molybdenum, tungsten etc., and doping content is 0.1 ~ 10%.Control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 DEG C.The phase transition temperature of the vanadium oxide film of preparation is 20 ~ 60 DEG C, and thickness is 5 ~ 100nm.Then photoetching and etching are carried out to this layer of vanadium oxide film, etch the upper strata vanadium oxide film figure as shown in Fig. 1-g.
The device of double-deck vanadium oxide film pattern is finished with oxygen gas plasma bombardment, the light-sensitive polyimide (sacrifice layer) of imidization is removed, formed and have the infrared of silicon nitride bridge floor supporting construction and terahertz emission probe unit, the generalized section of this probe unit is as shown in Fig. 1-h.
Embodiment 2
Double-deck vanadium oxide film, wherein lower floor's vanadium oxide film be have high temperature coefficient of resistance without phase transformation vanadium oxide film, as the infrared sensitive layer with terahertz wave band; Upper strata vanadium oxide film has low transformation temperature, as the infrared absorbed layer with terahertz wave band.
Lower floor's vanadium oxide film adopts magnetron sputtering method preparation.Controlling sputtering power during sputtering is 450W, and partial pressure of oxygen is 7%, and sputtering time is 30min, and film thickness is about 70nm, and annealing temperature is 350 DEG C.As shown in Figure 2, film Weis – 3%/K ~ – 5%/K at the temperature-coefficient of electrical resistance of 20 ~ 80 DEG C to the change curve of the electrical resistance temperature of the vanadium oxide film of preparation.
Magnetron sputtering method is adopted to prepare upper strata vanadium oxide film.Obtain low transformation temperature by doping, the element mixed is tungsten, and doping content is 4%.Controlling sputtering power during sputtering is 150W, and partial pressure of oxygen is 5%, and sputtering time is 15min, and film thickness is about 20nm, and annealing temperature is 350 DEG C.As shown in Figure 3, the phase transition temperature of film is 50 DEG C to the change curve of the electrical resistance temperature of the vanadium oxide film of preparation.
Claims (8)
1. infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, comprise substrate (10), drive circuit (20), sacrifice layer (30), described drive circuit is arranged on substrate (10), and this drive circuit (20) is provided with circuit interface (21); Described sacrifice layer (30) is prepared in this with on the substrate of drive circuit, and on drive circuit, from bottom to top preparation has cushion (40), supporting layer (50), top electrodes (60) successively, and this top electrodes is connected with described circuit interface; On this top electrodes and supporting layer, from bottom to top preparation has lower floor's vanadium oxide film and upper strata vanadium oxide film successively; Described lower floor vanadium oxide film be have high temperature coefficient of resistance without phase transformation vanadium oxide film, make sensitive layer that is infrared and terahertz wave band;
Can be there is the reversible transition of semiconductor phase-Metal Phase in described upper strata vanadium oxide film, for semiconductor phase time is used as infrared absorption layer, for making terahertz emission absorbed layer after Metal Phase together with lower floor vanadium oxide film.
2. according to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, the phase transition temperature of described upper strata vanadium oxide film is 20 ~ 60 DEG C, and thickness is 5 ~ 100nm; The temperature-coefficient of electrical resistance Wei – 2%/K ~ – 6%/K of described lower floor vanadium oxide film, thickness is 30 ~ 200nm.
3. according to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, after the release of described sacrifice layer, the position of former sacrifice layer forms resonator, and this resonator height is 1.5 ~ 3 μm; Described sacrificial layer material is the one in polyimides, silica, the porous silicon of oxidation and phosphorosilicate glass.
4. according to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, described supporting layer is made up of single thin film or is made up of plural layers, and material is silica or silicon nitride, and the thickness of supporting layer is between 0.1 ~ 1 μm.
5. according to claim 1 infrared-Terahertz two waveband detector array micro-bridge structure, it is characterized in that, described cushioning layer material is metal or metal alloy or nonmetallic materials; Top electrode material is their alloy of aluminium, tungsten, titanium, platinum, nickel, chromium or any one.
6. according to claim 1 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that, comprise the following steps:
1. also graphical at the Grown sacrifice layer with drive circuit, make the section configuration of sacrifice layer pattern edge present trapezoid shape, expose the circuit interface of drive circuit;
2. on the substrate of existing sacrifice layer pattern, cushion pattern is prepared;
3. on the device of step 2. gained, prepare supporting layer, and form supporting layer pattern by photoetching process, expose circuit interface;
4. on the device of step 3. gained, prepare top electrode layer, and form top electrodes layer pattern by photoetching process, require that top electrode layer is electrically connected with circuit interface;
5. on the substrate preparing top electrode layer, preparation is used as lower floor's vanadium oxide film of sensitive layer and it is graphical;
6. preparation has the upper strata vanadium oxide film of low transformation temperature and it is graphical;
7. releasing sacrificial layer, forms micro-bridge structure, then carries out encapsulation and forms probe unit.
7. according to claim 6 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that, the lower floor's vanadium oxide film as sensitive layer adopts magnetron sputtering method preparation; Controlling sputtering power during sputtering is 100 ~ 500W, and partial pressure of oxygen is 0.5% ~ 10%, and sputtering time is 5 ~ 60min, and annealing temperature is 200 ~ 600 DEG C.
8. according to claim 6 infrared-preparation method of Terahertz two waveband detector array micro-bridge structure, it is characterized in that, the upper strata vanadium oxide film with low transformation temperature adopts magnetron sputtering method preparation; The element adulterated during preparation is titanium, molybdenum, tungsten, and doping content is 0.1 ~ 10%; Control sputtering power is 50 ~ 300W, and partial pressure of oxygen is 0.5% ~ 8%, and sputtering time is 2 ~ 30min, and annealing temperature is 200 ~ 600 DEG C.
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| CN103606585B (en) * | 2013-11-25 | 2016-02-03 | 电子科技大学 | A kind of Terahertz room temperature creep of high-selenium corn structure and preparation method |
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| CN110931628A (en) * | 2019-11-14 | 2020-03-27 | 天津大学 | Superconducting nanowire single-photon detector working in dual-band |
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| CN101943803A (en) * | 2010-07-07 | 2011-01-12 | 电子科技大学 | Structural material for modulation of terahertz waves |
| CN102175329A (en) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | Infrared detector, manufacturing method thereof and multiband uncooled infrared focal plane |
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