CN103165282B - A kind of composite base plate for thin-film capacitor - Google Patents
A kind of composite base plate for thin-film capacitor Download PDFInfo
- Publication number
- CN103165282B CN103165282B CN201310065919.4A CN201310065919A CN103165282B CN 103165282 B CN103165282 B CN 103165282B CN 201310065919 A CN201310065919 A CN 201310065919A CN 103165282 B CN103165282 B CN 103165282B
- Authority
- CN
- China
- Prior art keywords
- weight
- base plate
- substrate
- film capacitor
- composite base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a kind of manufacture method of composite base plate for thin-film capacitor, the method by purity be 99.999% pure Cu substrate on combine containing the ni substrate of plurality of impurities, thus form composite base plate for thin-film capacitor; Wherein, ni substrate, according to weight percent meter, has the material of following proportioning: the content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Description
Technical field
The invention belongs to film capacitor field, particularly relate to a kind of composite base plate for thin-film capacitor.
Background technology
In existing film capacitor, owing to having higher requirement to the capacitance of capacitor.In prior art, film capacitor generally comprises substrate, dielectric layer and electrode layer.The microstructure of dielectric layer is the key factor determining capacitor performance.Therefore, the material structure for film capacitor substrate has strict requirement.
Existing film capacitor substrate has employing metallic nickel to form more.In order to not affect the performance of capacitor while improving capacitance, the purity of ni substrate and impurity are formed just can not be ignored.If containing less desirable impurity in ni substrate, or its purity is not enough, the capacitance of restriction film capacitor is improved, and may increase its Leakage Current, thus affect the quality of film capacitor.
And film capacitor generally all combines on a printed circuit by embedding form, and the line pattern of existing printed circuit board (PCB) is generally all made up of metallic copper, and therefore, existing ni substrate film capacitor is combined with printed circuit board (PCB) still has defect.
Summary of the invention:
The present invention is directed in prior art the film capacitor Problems existing adopting metallic nickel as substrate, propose a kind of composite base plate, thus not affecting under the prerequisite improving capacitance, obtaining the film capacitor of superior performance, and can better be combined with printed circuit board (PCB).
The composite base plate for thin-film capacitor that the present invention proposes, it has double-decker, and this double-decker comprises copper base and is formed in the ni substrate containing trace impurity on this copper base; Wherein, described copper base adopts highly purified fine copper to be formed, and its purity is 99.999%; Wherein, ni substrate, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Accompanying drawing explanation
Fig. 1 is the structural representation that the composite base plate for thin-film capacitor proposed for the present invention is combined with printed circuit board (PCB).
Embodiment:
Below by embodiment, the present invention is described in detail.
Embodiment 1:
See Fig. 1, composite base plate for thin-film capacitor has double layer substrate structure, and this double layer substrate structure comprises copper base and is formed in the ni substrate containing trace impurity on this copper base; Wherein, described copper base adopts highly purified fine copper to be formed, and its purity is 99.999%; Wherein, ni substrate, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
It should be noted that, in the composite base plate for thin-film capacitor that the present invention proposes, do not limit the thickness proportion of copper base and ni substrate, various thickness proportion is all suitable (thickness proportion of such as copper base and ni substrate is 1:1,1:2,1:3,2:3 etc.), as long as this composite base plate is combined into by copper base and ni substrate.That is, as long as the thickness of composite base plate reaches requirement, it accounts for the percentage of composite base plate gross thickness respectively without the need to specifically limiting copper base and ni substrate, because those skilled in the art can distribute the thickness of copper base and ni substrate according to actual needs, to tackle various different occasion.
Introduce the manufacture method of this composite base plate for thin-film capacitor below, described method in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel of 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 3-5 millimeter;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1-2 millimeter;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 650-800 DEG C, and annealing time is 40 minutes;
(6) ni substrate of step (5) gained is fitted on copper base carry out third time rolling, after rolling, form the composite base plate paillon foil that thickness is 200-300 micron;
(7) third time thermal annealing, the composite base plate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 700-800 DEG C, and annealing time is 30 minutes;
(8) manufacture of composite base plate is completed after the composite base plate paillon foil of step (7) gained being determined the size of needs.
Embodiment 2:
See Fig. 1, composite base plate for thin-film capacitor has double layer substrate structure, and this double layer substrate structure comprises copper base and is formed in the ni substrate containing trace impurity on this copper base; Wherein, described copper base adopts highly purified fine copper to be formed, and its purity is 99.999%; Wherein, ni substrate, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight.
Introduce the manufacture method of this composite base plate for thin-film capacitor below, described method in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel of 99.98 % by weight.All the other 0.02 % by weight are plurality of impurities.Described plurality of impurities comprises: the manganese of 0.0005-0.0008 % by weight, the chromium of the aluminium of 0.005-0.008 % by weight, the silver of 0.001-0.002 % by weight, 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) first time rolling: after above-mentioned raw materials melting, carry out first time rolling to it, the ni substrate of this first time rolling gained is foil-like, and its thickness is 4 millimeters;
(3) first time thermal annealing, the ni substrate paillon foil of step (2) gained carries out first time thermal annealing, and annealing temperature is 700 DEG C, and annealing time is 60 minutes;
(4) second time rolling, carries out second time rolling to the ni substrate paillon foil of step (3) gained, and obtain the less paillon foil of thickness after second time rolling, its thickness is 1.8 millimeters;
(5) second time thermal annealing, the ni substrate paillon foil of step (4) gained is carried out second time thermal annealing, and annealing temperature is 700 DEG C, and annealing time is 40 minutes;
(6) ni substrate of step (5) gained is fitted on copper base carry out third time rolling, after rolling, form the composite base plate paillon foil that thickness is 240 microns;
(7) third time thermal annealing, the composite base plate paillon foil of step (6) gained is carried out third time thermal annealing, and annealing temperature is 750 DEG C, and annealing time is 30 minutes;
(8) manufacture of composite base plate is completed after the composite base plate paillon foil of step (7) gained being determined the size of needs.
The composite base plate for thin-film capacitor that the present invention proposes, owing to being combined with ni substrate on copper base, therefore, when being attached on printed circuit board (PCB), because the copper wire pattern on copper base and printed circuit board (PCB) all adopts identical material, i.e. metallic copper, so they can realize perfect combination, thus effectively avoid due to combine strong and cause get loose or come off, therefore, it is possible to improve the useful life of printed circuit board (PCB).
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (2)
1. a composite base plate for thin-film capacitor, is characterized in that:
Described composite base plate has double-decker, and this double-decker comprises copper base and is formed in the ni substrate containing trace impurity on this copper base; Wherein, described copper base adopts highly purified fine copper to be formed, and its purity is 99.999%; Wherein, ni substrate, according to weight percent meter, has the material of following proportioning:
The content of nickel is more than or equal to 99.98 % by weight, all the other are less than or equal to 0.02 % by weight for plurality of impurities, and described plurality of impurities comprises: the tantalum of the iron of the silver of the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, 0.001-0.002 % by weight, the chromium of 0.0005-0.001 % by weight, 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight, the antimony of 0.001-0.002 % by weight and 0.001-0.002 % by weight;
Wherein, have in double-deck composite base plate, copper base is combined with pcb board, and copper base has ni substrate, and this ni substrate has dielectric layer and electrode successively, thus composite base plate, dielectric layer and electrode form film capacitor jointly.
2. composite base plate for thin-film capacitor as claimed in claim 1, is characterized in that:
The thickness of described composite base plate for thin-film capacitor is 200-300 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065919.4A CN103165282B (en) | 2013-03-01 | 2013-03-01 | A kind of composite base plate for thin-film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065919.4A CN103165282B (en) | 2013-03-01 | 2013-03-01 | A kind of composite base plate for thin-film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103165282A CN103165282A (en) | 2013-06-19 |
| CN103165282B true CN103165282B (en) | 2016-04-27 |
Family
ID=48588282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310065919.4A Active CN103165282B (en) | 2013-03-01 | 2013-03-01 | A kind of composite base plate for thin-film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103165282B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384668B (en) * | 2016-10-26 | 2018-07-06 | 广东丰明电子科技有限公司 | A kind of thin film capacitor multilager base plate |
| CN106340386B (en) * | 2016-10-26 | 2018-06-01 | 安徽飞达电气科技有限公司 | A kind of large capacity thin film capacitor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL132834A (en) * | 1998-11-23 | 2006-06-11 | Micro Coating Technologies | Formation of thin film capacitors |
| US8414962B2 (en) * | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
| CN100513058C (en) * | 2005-11-28 | 2009-07-15 | 镇江鼎胜铝业有限公司 | Aluminium strip for capacitor shell |
| JP5023762B2 (en) * | 2006-03-30 | 2012-09-12 | Ｔｄｋ株式会社 | Thin film capacitor and manufacturing method thereof |
| CN202218478U (en) * | 2011-08-30 | 2012-05-09 | 徐卓辉 | Composite metal connecting piece capable of being mounted on PCB |
-
2013
- 2013-03-01 CN CN201310065919.4A patent/CN103165282B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103165282A (en) | 2013-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9266188B2 (en) | Aluminum copper clad material | |
| EP2339039B1 (en) | Copper alloy sheet for electric and electronic part | |
| CN102140594B (en) | High-strength, high-conductivity and high-toughness copper alloy and preparation method thereof | |
| WO2013065699A1 (en) | High strength, high heat-resistance electrolytic copper foil, and manufacturing method for same | |
| JP5706045B2 (en) | Electrolytic copper foil and manufacturing method thereof | |
| CN103165282B (en) | A kind of composite base plate for thin-film capacitor | |
| JP2012162776A (en) | Copper alloy plate and method for manufacturing the same | |
| JP2010118505A (en) | Glass substrate for solar cell | |
| CN103031466B (en) | Tin-brass alloy and manufacturing method thereof | |
| JP4642119B2 (en) | Copper alloy and method for producing the same | |
| CN103173704B (en) | Manufacturing method of composite base plate for thin-film capacitor | |
| US20140345677A1 (en) | Substrate material of iron-nickel alloy metal foil for cigs solar cells | |
| WO2011152104A1 (en) | Cu-co-si-based alloy sheet, and process for production thereof | |
| CN105473760A (en) | Sputtering target for forming protective film and layered wiring film | |
| CN103151168B (en) | A kind of nickel substrate for thin film capacitor | |
| JP2007092150A (en) | Aluminum-ceramic joined substrate and method for producing the same | |
| JP2013055162A (en) | Copper foil for flexible printed wiring board, copper clad laminate, flexible printed wiring board, and electronic apparatus | |
| CN102651349B (en) | Power module substrate and method for making, this substrate carrying radiator and power model | |
| CN103151167B (en) | Method for manufacturing nickel substrate for thin film capacitor | |
| CN103531317A (en) | Electrode-enhanced power negative-temperature thermistor and preparation process thereof | |
| CN103177871B (en) | A kind of film capacitor with composite base plate | |
| CN103165284B (en) | A kind of manufacture method with the film capacitor of composite base plate | |
| CN113363042B (en) | Thin film inductance material, preparation method thereof and double-sided thin film inductor | |
| JP3856018B2 (en) | Manufacturing method of high strength and high conductivity copper alloy | |
| JP2012089686A (en) | Three-dimentional wiring body and method for manufacturing three-dimentional wiring body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190827 Address after: 430000 Hubei Province Wuhan Hongshan District Donghu New Technology Development Zone Laowu-Huanghe Highway 206 Huigu Space-time Building 705, 706A Patentee after: Wuhan Tuozhijia Information Technology Co., Ltd. Address before: Liyang City, Jiangsu province 213300 Changzhou City Dai Town West Industrial Road No. 8 Patentee before: Liyang Huajing Electronic Material Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191206 Address after: 314000 Building 2, west side of provincial road 01, Jinxing village, Wuyuan street, Haiyan County, Jiaxing City, Zhejiang Province Patentee after: Haiyan ideal Electronic Technology Co., Ltd Address before: 430000 Hubei Province Wuhan Hongshan District Donghu New Technology Development Zone Laowu-Huanghe Highway 206 Huigu Space-time Building 705, 706A Patentee before: Wuhan Tuozhijia Information Technology Co., Ltd. |
|
| TR01 | Transfer of patent right |