CN103107238B - Monocrystaline silicon solar cell and preparation method thereof - Google Patents

Monocrystaline silicon solar cell and preparation method thereof Download PDF

Info

Publication number
CN103107238B
CN103107238B CN201210529857.3A CN201210529857A CN103107238B CN 103107238 B CN103107238 B CN 103107238B CN 201210529857 A CN201210529857 A CN 201210529857A CN 103107238 B CN103107238 B CN 103107238B
Authority
CN
China
Prior art keywords
doping type
layer
substrate
stressor layers
type monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210529857.3A
Other languages
Chinese (zh)
Other versions
CN103107238A (en
Inventor
杨瑞鹏
张开军
付建明
温显
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Sai'ang Electric Power Co Ltd
Original Assignee
Hangzhou Sai'ang Electric Power Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Sai'ang Electric Power Co Ltd filed Critical Hangzhou Sai'ang Electric Power Co Ltd
Priority to CN201210529857.3A priority Critical patent/CN103107238B/en
Publication of CN103107238A publication Critical patent/CN103107238A/en
Application granted granted Critical
Publication of CN103107238B publication Critical patent/CN103107238B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of monocrystaline silicon solar cell and preparation method thereof, the manufacture method of described monocrystaline silicon solar cell comprises: provide substrate; SiGe virtual substrate is formed at the upper surface of described substrate; Described SiGe virtual substrate is formed the second doping type monocrystalline silicon layer; Form stressor layers in described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer; The first electrode is formed on described stressor layers surface; The second electrode is formed at the lower surface of described substrate.The manufacture method of described monocrystaline silicon solar cell effectively can improve the mobility of charge carrier in monocrystaline silicon solar cell, improves the conversion efficiency of monocrystaline silicon solar cell.

Description

Monocrystaline silicon solar cell and preparation method thereof
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of monocrystaline silicon solar cell and preparation method thereof.
Background technology
Solar cell utilizes photoelectric effect to convert light to electric energy.Basic solar battery structure, comprises single p-n junction, P-I-N/N-I-P knot and multijunction structure.Typical single p-n junction structure comprises: P type doped layer and N-type doped layer.Single p-n junction solar cell has homojunction and heterojunction two kinds of structures: the P type doped layer of homojunction structure and N-type doped layer are all made up of analog material (band gap of material is equal), and heterojunction structure comprises the material with at least two-layer different band gap.P-I-N/N-I-P structure comprises P type doped layer, N-type doped layer and is sandwiched in the intrinsic semiconductor layer (do not adulterate I layer) between P layer and N layer.Multijunction structure comprises multiple semiconductor layers with different band gap, and described multiple semiconductor layer is stacking mutually.
In solar cells, light is absorbed near P-N junction, and produce light induced electron and photohole, described light induced electron and photohole diffuse into P-N junction and separated by internal electric field, and light induced electron is pushed into N district, and hole is pushed into P district.Form positive and negative charge accumulated in PN junction both sides, produce photo-induced voltage thus be generated across the electric current of described device and external circuitry.
At present, monocrystaline silicon solar cell is produced widely and is applied due to its larger photoelectric conversion efficiency, and monocrystaline silicon solar cell is generally that doped N-type ion forms PN junction on p type single crystal silicon sheet.The conversion efficiency of monocrystaline silicon solar cell is subject to the impact of several factors, needs further to be improved.
More manufacture methods about monocrystaline silicon solar cell please refer to the Chinese patent that publication number is CN102315327A.
Summary of the invention
The problem that the present invention solves is to provide a kind of monocrystaline silicon solar cell and preparation method thereof, improves the conversion efficiency of monocrystaline silicon solar cell.
For solving the problem, technical scheme of the present invention proposes a kind of manufacture method of monocrystaline silicon solar cell, comprising: provide substrate, and described substrate is the first doping type monocrystalline silicon piece; SiGe virtual substrate is formed at the upper surface of described substrate; Described SiGe virtual substrate is formed the second doping type monocrystalline silicon layer, and described second doping type monocrystalline silicon layer is subject to biaxial stress; Form stressor layers in described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer; The first electrode is formed on described stressor layers surface; The second electrode is formed at the lower surface of described substrate.
Optionally, the method forming described SiGe virtual substrate comprises: first grow at substrate surface the Si that one deck Ge content increases gradually with thickness 1-xge xresilient coating, then at described Si 1-xge xbuffer-layer surface grows the relaxation Si of one deck Ge stable content 1-xge xlayer, described Si 1-xge xresilient coating and relaxation Si 1-xge xlayer forms SiGe virtual substrate.
Optionally, the formation process of described SiGe virtual substrate comprises molecular beam epitaxy, ultra-high vacuum CVD or rpcvd.
Optionally, described substrate is p type single crystal silicon sheet, and the second doping type monocrystalline silicon layer is N-type layer, and described stressor layers has tensile stress; Or described substrate is n type single crystal silicon sheet, the second doping type monocrystalline silicon layer is P-type layer, and described stressor layers has compression.
Optionally, described in there is the stressor layers of tensile stress formation method comprise: using plasma strengthens chemical vapor deposition method, wherein, NH 2and SiH 4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the radio frequency power source of 10MHz ~ 15MHz.
Optionally, described in there is the stressor layers of compression formation method comprise: using plasma strengthens chemical vapor deposition method, wherein, NH 2and SiH 4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the low frequency power source of 50KHz ~ 500kHz.
Optionally, described stressor layers comprises silicon nitride film or silicon oxide film.
Optionally, the formation process of described stressor layers comprises thermal chemical vapor deposition or plasma enhanced chemical vapor deposition.
Optionally, the thickness range of described stressor layers is 0.5nm ~ 100nm, and the number range of the stress of stressor layers is 200MPa ~ 1000MPa.
Optionally, the thickness range of described second doping type monocrystalline silicon layer is the concentration range of Doped ions is 1E10/cm 3~ 1E20/cm 3.
Optionally, also comprise: after stressor layers surface forms anti-reflecting layer, then form the first electrode on described anti-reflecting layer surface.
Optionally, also comprise: after the second doping type monocrystalline surface forms anti-reflecting layer, then form stressor layers on described anti-reflecting layer surface.
For solving the problem, embodiments of the invention also proposed a kind of monocrystaline silicon solar cell, comprising: substrate, and described substrate is the first doping type monocrystalline silicon piece; Be positioned at the SiGe virtual substrate of the upper surface of described substrate; Be positioned at the second doping type monocrystalline silicon layer in described SiGe virtual substrate; Be positioned at the stressor layers of described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer; Be positioned at first electrode on described stressor layers surface; Be positioned at the second electrode of described substrate lower surface.
Optionally, described SiGe virtual substrate comprises the Si that Ge content increases gradually with thickness 1-xge xthe relaxation Si of resilient coating and Ge stable content 1-xge xlayer.
Optionally, described substrate is p type single crystal silicon sheet, and the second doping type monocrystalline silicon layer is N-type layer, and stressor layers has tensile stress; Or described substrate is n type single crystal silicon sheet, the second doping type monocrystalline silicon layer is P-type layer, and stressor layers has compression.
Optionally, described stressor layers comprises silicon nitride film or silicon oxide film.
Optionally, the thickness range of described stressor layers is 0.5nm ~ 100nm, and the number range of the stress of stressor layers is 200MPa ~ 1000MPa.
Optionally, the thickness range of described second doping type monocrystalline silicon layer is the concentration range of Doped ions is 1E10/cm 3~ 1E20/cm 3.
Optionally, the anti-reflecting layer between the second doping type monocrystalline silicon layer and stressor layers is also comprised.
Optionally, the anti-reflecting layer between described stressor layers and the first electrode is also comprised.
Compared with prior art, the present invention has the following advantages:
After the upper surface of substrate forms SiGe virtual substrate, then in described SiGe virtual substrate, form the second doping type monocrystalline silicon layer, described second doping type monocrystalline silicon layer is the N-type layer not identical with Substrate Doping type or P-type layer.Due to the lattice mismatch between the second doping type monocrystalline silicon layer that SiGe virtual substrate and surface thereof are formed, biaxial stress can be produced in described second doping type monocrystalline silicon layer, second doping type monocrystalline silicon layer in growth plane according to the lattice epitaxial growth of SiGe virtual substrate, because the lattice constant of Si is less than SiGe, therefore, described second doping type monocrystalline silicon layer is subject to tensile stress in growth plane, and on the direction of vertical-growth plane, be subject to compression, charge carrier in described second doping type monocrystalline silicon layer makes stereo-motion in the process to the first electrode flowing in three-dimensional, described biaxial stress can improve the mobility in electronics and hole in the second doping type monocrystalline silicon layer simultaneously.Thus the mobility of charge carrier in raising monocrystaline silicon solar cell, reduce the recombination rate of charge carrier, improve the conversion efficiency of solar cell.
Further, stressor layers is formed again in the second doping type monocrystalline surface of described monocrystaline silicon solar cell, described stressor layers can improve the effect of stress that the second doping type monocrystalline silicon layer is subject to further, the mobility of further raising second doping type monocrystalline silicon layer carriers, thus reduce charge carrier in the process of the first drift electrode by the probability of compound, improve the charge carrier quantity at arrival first electrode place, improve total current density of solar cell, thus improve the conversion efficiency of monocrystaline silicon solar cell.
Further, the Si that the Ge content that described SiGe virtual substrate comprises substrate surface increases gradually with thickness 1-xge xresilient coating and be positioned at Si 1-xge xthe relaxation Si of the Ge stable content of buffer-layer surface 1-xge xlayer.The Si that described Ge content increases gradually with thickness 1-xge xresilient coating can effectively control bit misorientation extend, thus forms the less relaxation Si of dislocation defects 1-xge xlayer, thus obtain high-quality second doping type monocrystalline silicon layer on described SiGe virtual substrate surface.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of monocrystaline silicon solar cell described in embodiments of the invention;
Fig. 2 to Fig. 7 is the generalized section of the manufacture method of monocrystaline silicon solar cell described in embodiments of the invention.
Embodiment
As described in the background art, the conversion efficiency of current monocrystaline silicon solar cell needs further to be improved.
Research finds, the compound of photo-generated carrier directly affects the open circuit voltage of solar cell.So in the process of charge carrier to electrode movement, the migration rate improving charge carrier effectively can reduce the recombination rate of photo-generated carrier thus the conversion efficiency of raising solar cell.
Embodiments of the invention propose a kind of monocrystaline silicon solar cell and preparation method thereof, SiGe virtual substrate is formed the second doping type monocrystalline silicon layer of monocrystaline silicon solar cell, stressor layers is formed again in described second doping type monocrystalline surface, improve the migration rate of described second doping type monocrystalline silicon layer carriers, thus improve the conversion efficiency of solar cell.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Described embodiment is only a part for embodiment of the present invention, instead of they are whole.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.According to described embodiment, those of ordinary skill in the art's obtainable other execution modes all under without the need to the prerequisite of creative work, all belong to protection scope of the present invention.Therefore the present invention is not by the restriction of following public concrete enforcement.
Please refer to Fig. 1, be the schematic flow sheet of the manufacture method of monocrystaline silicon solar cell in the present embodiment, comprise:
Step S1: substrate is provided, described substrate is the first doping type monocrystalline silicon piece;
Step S2: form SiGe virtual substrate at the upper surface of described substrate;
Step S3: form the second doping type monocrystalline silicon layer in described SiGe virtual substrate;
Step S4: form stressor layers in described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer;
Step S5: form anti-reflecting layer on described stressor layers surface;
Step S6: form the first electrode on described anti-reflecting layer surface, form the second electrode at described substrate lower surface.
Please refer to Fig. 2, provide substrate 100, described substrate is the first doping type monocrystalline silicon piece.
Concrete, described substrate 100 is p type single crystal silicon sheet or n type single crystal silicon sheet, the substrate adopted in the present embodiment is p type single crystal silicon sheet, described p type single crystal silicon sheet carries out boron ion doping when forming silicon chip to described silicon chip, can also be the doping described silicon chip being carried out to one or more ions in boron, gallium or indium.
Please refer to Fig. 3, form SiGe virtual substrate 110 at the upper surface of described substrate 100.
Concrete, described SiGe virtual substrate 110 comprises the Ge content of the upper surface being positioned at substrate 100 with the ever-increasing Si of thickness 1-xge xresilient coating 101 and be positioned at Si 1-xge xthe relaxation Si of the Ge stable content on resilient coating 101 surface 1-xge xlayer 102.
The formation process of described SiGe virtual substrate 110 comprises molecular beam epitaxy, ultra-high vacuum CVD or rpcvd.Ultra-high vacuum CVD technique is adopted in the present embodiment.Before the described SiGe virtual substrate 110 of formation, first described substrate 100 is cleaned, remove the impurity on substrate 100 surface, to guarantee SiGe virtual substrate 110 quality of follow-up formation.At the temperature of 850 DEG C, adopt Si 2h 6as reacting gas source, first grow one deck Si resilient coating (not shown) at substrate surface, to improve growth initial surface, described Si 2h 6flow be 13sccm, the thickness of described Si resilient coating is 200nm ~ 600nm; Then Si is grown 1-xge xresilient coating 101, described Si 1-xge xin resilient coating 101, the content x of Ge increases gradually along with growth thickness, keeps Si 2h 6flow be that 13sccm is constant, GeH 4flow increase progressively from 0 to 5sccm, formed Si 1-xge xresilient coating 101; Again at described Si 1-xge xresilient coating 101 superficial growth relaxation Si 1-xge xlayer 102, now keeps Si 2h 6flow be 13sccm, GeH 4flow be 2.5sccm, formed relaxation Si 1-xge xlayer 102, described relaxation Si 1-xge xin layer 102, the content x of Ge keeps stable.Described Si 1-xge xresilient coating 101 and relaxation Si 1-xge xlayer 102 constitutes SiGe virtual substrate 110.
Please refer to Fig. 4, described SiGe virtual substrate 110 is formed the second doping type monocrystalline silicon layer 103.
Second doping type monocrystalline silicon layer 103 is P-type layer or N-type layer, and doping type is different from the doping type of substrate 100.In the present embodiment, the substrate 100 of employing is p type single crystal silicon sheet, so the second doping type monocrystalline silicon layer 103 formed on described SiGe virtual substrate 110 surface is N-type layer.
The formation method of concrete described second doping type monocrystalline silicon layer 103 is in described SiGe virtual substrate, deposit one deck monocrystalline silicon layer, carries out N-type ion doping form the second doping type monocrystalline silicon layer 103 to described monocrystalline silicon layer.Described Doped ions comprises one or more in phosphorus, arsenic or antimony, and the concentration of described Doped ions is 1E10/cm 3~ 1E20/cm 3, the technique of described doping is that plasma injects or diffusion.The thickness of described second doping type monocrystalline silicon layer 103 is
In other embodiments of the invention, the substrate 100 of employing is n type single crystal silicon sheet, and after described n type single crystal silicon sheet surface forms SiGe virtual substrate, the second doping type monocrystalline silicon layer formed on described SiGe virtual substrate surface is P-type layer.The formation method of described P-type layer is in described SiGe virtual substrate, deposit one deck monocrystalline silicon layer, carries out P type ion doping form the second doping type monocrystalline silicon layer to described monocrystalline silicon layer.Described Doped ions comprises one or more in boron, gallium or indium, and the concentration of described Doped ions is 1E10/cm 3~ 1E20/cm 3, the technique of described doping is that plasma injects or diffusion.The thickness of described second doping type monocrystalline silicon layer is
In the present embodiment, described SiGe virtual substrate 110 is formed the second doping type monocrystalline silicon layer 103, due to the lattice mismatch between the second doping type monocrystalline silicon layer 103 that SiGe virtual substrate 110 and surface thereof are formed, biaxial stress can be produced in described second doping type monocrystalline silicon layer 103, second doping type monocrystalline silicon layer in growth plane according to the lattice epitaxial growth of SiGe virtual substrate 110, because the lattice constant of Si is less than SiGe, therefore, described second doping type monocrystalline silicon layer is subject to tensile stress in growth plane, and on the direction of vertical-growth plane, be subject to compression, the mobility in electronics and hole in the second doping type monocrystalline silicon layer 103 can be improved simultaneously.Thus improve total current density of solar cell, improve the conversion efficiency of solar cell.
And, lattice constant due to SiGe virtual substrate is greater than the lattice constant of Si, so, photohole and the mobility ratio of light induced electron in described SiGe virtual substrate are large in substrate and the second doping type monocrystalline silicon layer, so, more be conducive to photo-generated carrier and cross PN junction, reduce the recombination rate of charge carrier, thus improve the conversion efficiency of monocrystaline silicon solar cell.
Please refer to Fig. 5, form stressor layers 104 on described second doping type monocrystalline silicon layer 103 surface, the stress types of described stressor layers 104 is corresponding with the doping type of described second doping type monocrystalline silicon layer 103.
In the present embodiment, described second doping type monocrystalline silicon layer 103 is N-type layer, forms the stressor layers 104 with tensile stress on described second doping type monocrystalline silicon layer 103 surface.The described material with the stressor layers 104 of tensile stress comprises transparent nonconducting film such as silicon nitride film, silicon oxide film.The described formation process with the stressor layers 104 of tensile stress is plasma enhanced chemical vapor deposition (PECVD) or thermal chemical vapor deposition.In the present embodiment, described in there is the stressor layers 104 of tensile stress for silicon nitride film, the formation process of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH 2and SiH 4, utilize the inert gases such as Ar as carrier gas, SiH 4and NH 2gas flow ratio be 0.1 ~ 4, reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be the radio frequency power source of 10W ~ 100W, and frequency is 13.56MHz.The thickness of described stressor layers 104 is 0.5nm ~ 100nm, has tensile stress, and the number range of tensile stress is 200MPa ~ 1000MPa.Described stressor layers 104 makes N-type layer be subject to the effect of the tensile stress in horizontal plane, the mobility of electronics in the second doping type monocrystalline silicon layer of N-type is improved, thus reduce from substrate produce light induced electron after PN junction in N-type layer Drift Process by the probability of compound, improve the electron amount arriving electrode place, thus improve the conversion efficiency of solar cell.
Described second doping type monocrystalline silicon layer 103 also can be P-type layer, forms the stressor layers 104 with compression on described P-type layer surface.The described stressor layers with compression comprises silicon nitride film or silicon oxide film, described in there is the stressor layers of compression formation process comprise plasma enhanced chemical vapor deposition or thermal chemical vapor deposition.In one embodiment of the invention, described in there is compression stressor layers be silicon nitride film, the formation process of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH 2and SiH 4, utilize the inert gases such as Ar as carrier gas, SiH 4and NH 2gas flow ratio be 0.1 ~ 4, reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provide a power to be the low frequency power source of 10W ~ 100W, frequency is 100KHz.The thickness of described stressor layers is 0.5nm ~ 100nm, has compression, and the number range of compression is 200MPa ~ 1000MPa.The described stressor layers with compression, P-type layer is made to be subject to the effect of the compression in horizontal plane, the mobility of photohole in P-type layer is improved, thus reduce photohole after PN junction, in P-type layer in Drift Process by the probability of compound, improve the number of cavities at arrival first electrode place, thus improve the conversion efficiency of solar cell.
In other embodiments of the invention, stressor layers can also be formed in the second doping type monocrystalline surface, also the contrary stressor layers of stress types is formed at substrate lower surface, the second doping type monocrystalline silicon layer and substrate is made all to be subject to effect of stress, improve the mobility of the second doping type monocrystalline silicon layer and substrate carriers simultaneously, improve the conversion efficiency of solar cell further.
Please refer to Fig. 6, form anti-reflecting layer 105 on described stressor layers 104 surface.
Concrete, the methods such as the evaporation of PECVD, magnetron sputtering or electron beam can be adopted to form anti-reflecting layer 105, and described anti-reflecting layer 105 is the transparent material of low-refraction coefficient, such as TiO 2, SiN, SiO, Al 2o 3, SiO 2or CeO 2deng.The thickness range of described anti-reflecting layer 105 is described anti-reflecting layer 105, except antireflecting effect, can also play the effect of passivated surface.The material of the anti-reflecting layer 105 adopted in the present embodiment is TiO 2.Due in the present embodiment, using the second doping type monocrystalline silicon layer as plane of illumination, so the surface of stressor layers 104 on the second doping type monocrystalline silicon layer 103 surface forms anti-reflecting layer 105.
In other embodiments of the invention, the silicon nitride film adopted due to described stressor layers 104 or silicon oxide film have lower specific refractivity, the reflection to sunlight can be reduced, as the anti-reflecting layer of the second doping type monocrystalline surface, solar cell can be improved to the absorptivity of sunlight.So can additionally form described anti-reflecting layer again, thus processing step can be reduced.
In other embodiments of the invention, also first anti-reflecting layer can be formed on the second doping type monocrystalline silicon layer 103 surface, and then form stressor layers on described anti-reflecting layer surface, because the thickness of described anti-reflecting layer is lower, so the second doping type monocrystalline silicon layer can be subject to the effect of stress of stressor layers equally, improve the mobility of charge carrier.
Please refer to Fig. 7, form the first electrode 106 on the surface of anti-reflecting layer 105, form the second electrode 107 at the lower surface of described substrate.
The concrete technology forming described first electrode 105 and the second electrode 106 is known for those skilled in the art, does not repeat them here.
According to above-mentioned manufacture method, embodiments of the invention additionally provide a kind of monocrystaline silicon solar cell.
Please refer to Fig. 7, the monocrystaline silicon solar cell adopting above-mentioned manufacture method to be formed, comprising: substrate 100, and described substrate is the first doping type monocrystalline silicon piece; Be positioned at the SiGe virtual substrate 110 of described substrate upper surface; Be positioned at the second doping type monocrystalline silicon layer 103 on described SiGe virtual substrate 110 surface; Be positioned at the stressor layers 104 on described second doping type monocrystalline silicon layer 103 surface, the stress types of described stressor layers 104 is corresponding with the doping type of the second doping type monocrystalline silicon layer 103; Be positioned at the anti-reflecting layer 105 on described stressor layers 104 surface; Be positioned at first electrode 106 on described anti-reflecting layer surface; Be positioned at the second electrode 107 of described substrate lower surface.
Concrete, in the present embodiment, described substrate 100 is p type single crystal silicon sheet, and the second doping type monocrystalline silicon layer 103 is N-type layer, in described second doping type monocrystalline silicon layer, Doped ions comprises one or more in phosphorus, arsenic or antimony, and the concentration of described Doped ions is 1E10/cm 3~ 1E20/cm 3, the thickness of described second doping type monocrystalline silicon layer 103 is described stressor layers 104 comprises silicon nitride or silicon oxide film, has tensile stress.In other embodiments of the invention, described substrate can also be n type single crystal silicon sheet, then described second doping type monocrystalline silicon layer is P-type layer, and described stressor layers comprises silicon nitride or silicon oxide film, has compression.The thickness of described stressor layers 104 is 0.5nm ~ 100nm.
The Si that the Ge content that described SiGe virtual substrate 110 comprises substrate 100 surface increases with thickness 1-xge xresilient coating 101 and be positioned at Si 1-xge xthe relaxation Si of the Ge stable content on resilient coating 101 surface 1-xge xlayer 102.
Described anti-reflecting layer 105 is the transparent material of low-refraction coefficient, such as TiO 2, SiN, SiO, Al 2o 3, SiO 2or CeO 2deng.In other embodiments of the invention, described anti-reflecting layer can also between stressor layers and the second doping type monocrystalline silicon layer.
In other embodiments of the invention, can also have stressor layers between described substrate lower surface and the second electrode, if described substrate is p type single crystal silicon sheet, then described stressor layers has compression; If described substrate is n type single crystal silicon sheet, then described stressor layers has tensile stress.
By the explanation of above-described embodiment, professional and technical personnel in the field should be able to be made to understand the present invention better, and can reproduce and use the present invention.Those skilled in the art can be apparent to above-described embodiment do various changes and modifications when not departing from the spirit and scope of the invention according to principle described herein.Therefore, the present invention should not be understood to be limited to above-described embodiment shown in this article, and its protection range should be defined by appending claims.

Claims (18)

1. a manufacture method for monocrystaline silicon solar cell, is characterized in that, comprising:
There is provided substrate, described substrate is the first doping type monocrystalline silicon piece;
SiGe virtual substrate is formed at the upper surface of described substrate;
Described SiGe virtual substrate is formed the second doping type monocrystalline silicon layer, and the doping type of wherein said substrate and described second doping type monocrystalline silicon layer is contrary, and described second doping type monocrystalline silicon layer is subject to biaxial stress;
Form stressor layers in described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer;
The first electrode is formed on described stressor layers surface;
The second electrode is formed at the lower surface of described substrate.
2. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the method forming described SiGe virtual substrate comprises: first grow at substrate surface the Si that one deck Ge content increases gradually with thickness 1-xge xresilient coating, then at described Si 1-xge xbuffer-layer surface grows the relaxation Si of one deck Ge stable content 1-xge xlayer, described Si 1-xge xresilient coating and relaxation Si 1-xge xlayer forms SiGe virtual substrate.
3. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the formation process of described SiGe virtual substrate comprises molecular beam epitaxy, ultra-high vacuum CVD or rpcvd.
4. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, described substrate is p type single crystal silicon sheet, and the second doping type monocrystalline silicon layer is N-type layer, and described stressor layers has tensile stress; Or described substrate is n type single crystal silicon sheet, the second doping type monocrystalline silicon layer is P-type layer, and described stressor layers has compression.
5. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, described stressor layers comprises silicon nitride film or silicon oxide film.
6. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the formation process of described stressor layers comprises thermal chemical vapor deposition or plasma enhanced chemical vapor deposition.
7. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the thickness range of described stressor layers is 0.5nm ~ 100nm, and the number range of the stress of stressor layers is 200MPa ~ 1000MPa.
8. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the thickness range of described second doping type monocrystalline silicon layer is the concentration range of Doped ions is 1E10/cm 3~ 1E20/cm 3.
9. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: after stressor layers surface forms anti-reflecting layer, then forms the first electrode on described anti-reflecting layer surface.
10. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: after the second doping type monocrystalline surface forms anti-reflecting layer, then forms stressor layers on described anti-reflecting layer surface.
11. 1 kinds of monocrystaline silicon solar cells, is characterized in that, comprising:
Substrate, described substrate is the first doping type monocrystalline silicon piece;
Be positioned at the SiGe virtual substrate of described substrate upper surface;
Be positioned at the second doping type monocrystalline silicon layer in described SiGe virtual substrate, the doping type of wherein said substrate and described second doping type monocrystalline silicon layer is contrary;
Be positioned at the stressor layers of described second doping type monocrystalline surface, the stress types of described stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer;
Be positioned at first electrode on described stressor layers surface;
Be positioned at the second electrode of described substrate lower surface.
12. monocrystaline silicon solar cells according to claim 11, is characterized in that, described SiG evirtual substrate comprises the Si that Ge content increases gradually with thickness 1-xge xthe relaxation Si of resilient coating and Ge stable content 1-xge xlayer.
13. monocrystaline silicon solar cells according to claim 11, is characterized in that, described substrate is p type single crystal silicon sheet, and the second doping type monocrystalline silicon layer is N-type layer, and stressor layers has tensile stress; Or described substrate is n type single crystal silicon sheet, the second doping type monocrystalline silicon layer is P-type layer, and stressor layers has compression.
14. monocrystaline silicon solar cells according to claim 11, is characterized in that, described stressor layers comprises silicon nitride film or silicon oxide film.
15. monocrystaline silicon solar cells according to claim 11, is characterized in that, the thickness range of described stressor layers is 0.5nm ~ 100nm, and the number range of the stress of stressor layers is 200MPa ~ 1000MPa.
16. monocrystaline silicon solar cells according to claim 11, is characterized in that, the thickness range of described second doping type monocrystalline silicon layer is the concentration range of Doped ions is 1E10/cm 3~ 1E20/cm 3.
17. monocrystaline silicon solar cells according to claim 11, is characterized in that, also comprise the anti-reflecting layer between the second doping type monocrystalline silicon layer and stressor layers.
18. monocrystaline silicon solar cells according to claim 11, is characterized in that, also comprise the anti-reflecting layer between described stressor layers and the first electrode.
CN201210529857.3A 2012-12-06 2012-12-06 Monocrystaline silicon solar cell and preparation method thereof Expired - Fee Related CN103107238B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210529857.3A CN103107238B (en) 2012-12-06 2012-12-06 Monocrystaline silicon solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210529857.3A CN103107238B (en) 2012-12-06 2012-12-06 Monocrystaline silicon solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103107238A CN103107238A (en) 2013-05-15
CN103107238B true CN103107238B (en) 2016-03-23

Family

ID=48314948

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210529857.3A Expired - Fee Related CN103107238B (en) 2012-12-06 2012-12-06 Monocrystaline silicon solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103107238B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107908881A (en) * 2017-11-18 2018-04-13 兰州理工大学 A kind of analog detection method of nano silicon nitride silica microsphere compressive property

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243426A (en) * 2002-02-13 2003-08-29 Mitsubishi Materials Corp Manufacturing method for iron silicide layer, semiconductor substrate, and optical semiconductor device
TW200534382A (en) * 2004-04-14 2005-10-16 Witty Mate Corp A novel technique to grow high quality SnSe epitaxy layer on Si substrate
CN102165608A (en) * 2008-09-16 2011-08-24 赛昂电力有限公司 Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
CN202120962U (en) * 2011-05-24 2012-01-18 上海神舟新能源发展有限公司 Selective emitter single-crystalline silicon solar cell
CN102388448A (en) * 2009-02-19 2012-03-21 Iqe硅化合物有限公司 Formation of thin layers of semiconductor materials
CN102420267A (en) * 2011-10-25 2012-04-18 友达光电股份有限公司 Solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002082514A1 (en) * 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
US7514726B2 (en) * 2006-03-21 2009-04-07 The United States Of America As Represented By The Aministrator Of The National Aeronautics And Space Administration Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy
US20100059119A1 (en) * 2008-09-09 2010-03-11 Electronics And Telecommunications Research Institute Solar cell and method of manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243426A (en) * 2002-02-13 2003-08-29 Mitsubishi Materials Corp Manufacturing method for iron silicide layer, semiconductor substrate, and optical semiconductor device
TW200534382A (en) * 2004-04-14 2005-10-16 Witty Mate Corp A novel technique to grow high quality SnSe epitaxy layer on Si substrate
CN102165608A (en) * 2008-09-16 2011-08-24 赛昂电力有限公司 Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
CN102388448A (en) * 2009-02-19 2012-03-21 Iqe硅化合物有限公司 Formation of thin layers of semiconductor materials
CN202120962U (en) * 2011-05-24 2012-01-18 上海神舟新能源发展有限公司 Selective emitter single-crystalline silicon solar cell
CN102420267A (en) * 2011-10-25 2012-04-18 友达光电股份有限公司 Solar cell

Also Published As

Publication number Publication date
CN103107238A (en) 2013-05-15

Similar Documents

Publication Publication Date Title
US8872020B2 (en) Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
US20140283902A1 (en) Back junction solar cell with tunnel oxide
KR100989615B1 (en) Solar cell
CN106449850B (en) A kind of efficient silicon based hetero-junction double-side cell and preparation method thereof
CN101393942B (en) Polycrystalline-silicon carbide lamination thin-film solar cell
Banerjee et al. Fabrication of microcrystalline cubic silicon carbide/crystalline silicon heterojunction solar cell by hot wire chemical vapor deposition
CN113451434A (en) Laminated photovoltaic device and production method
KR20100090015A (en) Solar cell and method for fabricating the same
CN103107240B (en) Multi-crystal silicon film solar battery and preparation method thereof
CN103107238B (en) Monocrystaline silicon solar cell and preparation method thereof
CN102544184B (en) Personal identification number (PIN) solar battery with transverse structure and preparation method thereof
EP3593389A1 (en) Mask-less patterning of amorphous silicon layers for low-cost silicon hetero-junction interdigitated back-contact solar cells
CN103107236B (en) Heterojunction solar battery and preparation method thereof
CN203055965U (en) Monocrystalline silicon solar cell
KR20120127910A (en) Heterojunction solar cell and manufacturing method therefor
CN103107233B (en) Monocrystaline silicon solar cell and preparation method thereof
CN202977493U (en) Polysilicon thin-film solar cell
CN103107237B (en) Monocrystaline silicon solar cell and preparation method thereof
CN103107239B (en) Heterojunction solar battery and preparation method thereof
CN103107235B (en) Amorphous silicon thin-film solar cell and preparation method thereof
CN103107227B (en) Amorphous silicon thin-film solar cell and preparation method thereof
CN202977495U (en) Amorphous silicon film solar cell
CN202977496U (en) Solar cell with heterojunction
CN103107234B (en) Heterojunction solar battery and preparation method thereof
CN202977492U (en) Monocrystalline silicon solar cell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160323

Termination date: 20201206