CN103092423A - Single layer indium tin oxide (ITO) wiring structure - Google Patents

Single layer indium tin oxide (ITO) wiring structure Download PDF

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Publication number
CN103092423A
CN103092423A CN2013100304360A CN201310030436A CN103092423A CN 103092423 A CN103092423 A CN 103092423A CN 2013100304360 A CN2013100304360 A CN 2013100304360A CN 201310030436 A CN201310030436 A CN 201310030436A CN 103092423 A CN103092423 A CN 103092423A
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electrode
ito
individual layer
wire structures
electrodes
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CN2013100304360A
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Chinese (zh)
Inventor
樊永召
刘赫
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Suzhou Pixcir Microelectronics Co Ltd
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Suzhou Pixcir Microelectronics Co Ltd
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Priority to CN2013100304360A priority Critical patent/CN103092423A/en
Publication of CN103092423A publication Critical patent/CN103092423A/en
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Abstract

The invention discloses a single layer indium tin oxide (ITO) wiring structure, a plurality of electrode blocks are laid on a ITO of the single layer ITO wiring structure, each electrode block comprises a plurality of X electrodes and a Y electrode, each X electrode and each Y electrode respectively comprise a main body and a plurality of branch bodies extending from one side of the main body, the branch bodies of each X electrode and the branch bodies of each Y electrode are arranged oppositely, the plurality of X electrodes are laid in the gaps between the plurality of branch bodies of one Y electrode in sequence, and each two adjacent electrode blocks are arranged in a mirror-image mode. The single layer ITO structure is used for achieving the function of multi-finger touch and control, cost is low, due to the sufficient coupling between the electrodes, signal intensity and linearity of the whole ITO layer are significantly improved, and the ITO wiring structure can be applied in the field of large-size touch screens and solve the problem that the large-size touch screens are bad in edge detection effect.

Description

The wire structures of individual layer ITO
Technical field
The present invention relates to the wire structures of ITO, particularly relate to the wire structures of a kind of individual layer ITO.
Background technology
So-called ITO(indium tin oxide) be a kind of critical material for the production of liquid crystal display, at present, it has had in fields such as instrument and meter, computing machine, electronic watch, game machine and household electrical appliance very widely uses.On market, the capacitive touch screen of large heat is also to utilize ITO to complete the action that detecting touches in recent years, and on capacitance touch screen, the wiring of ITO is generally double-deck, its cardinal principle is: utilize people's bulk electric field, when the user touches, the mutual capacitance (also claiming coupling capacitance) of the infall sensing unit of surface row or column can change, and finally can detect the particular location of touch point according to above-mentioned variation.
Capacitive touch screen uses the diamond structure of two-layer electrode usually, its double-deck ITO is laid in respectively on the ipsilateral of glass substrate, for fear of the mutual conduction between electrode, so bridge contact need to be set on glass substrate, so just double-deck ITO can be laid on the same side of glass substrate.Although said method has been realized the action that detecting touches, the touch screen structure of the double-deck ITO of this employing, not only complex process, and bridge joint place easily damages, and product yield is low, causes the cost rising.In order to overcome above-mentioned shortcoming, part manufacturer is arranged to rectangle with the structure of ITO, then two-sidedly be arranged on the two-layer of glass substrate, so, really simple much of technique, and improved product yield, but what still adopt is the wire structures of double-deck ITO, the cost of ITO own is just higher, adds double-deck structure, and the thickness that forms thus touch-screen has also just been increased.If can overcome the limitation that double-deck ITO layouts brings, so no matter be from cost or the structure of touch-screen is considered, individual layer ITO all has more advantages.
But find through lot of experiments, have for traditional rhombus or rectangular configuration defectives such as referring to touch detection is unstable, power supply noise disturbs greatly, setting-out poor effect more, be applied in and have certain limitation on large-sized touch-screen, especially the marginal portion of touch-screen is owing to being laid with a large amount of electrodes and the connecting line of chip, and the detecting effect is relatively poor.
Therefore need to solve the problems referred to above for users provide a kind of novel individual layer ITO wire structures.
Summary of the invention
The technical matters that the present invention mainly solves is to provide the wire structures of a kind of individual layer ITO, can solve the problem of large scale screen edge detection weak effect.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: the wire structures that a kind of individual layer ITO is provided, be laid with several electrode blocks on its ITO, each electrode block comprises several X electrodes and a Y electrode, several support bodies that described X electrode and Y electrode include a main body and a side is extended on the main body, the support body of described X electrode and Y electrode arranges in opposite directions, several X electrodes order successively are laid in gap between several support bodies of a Y electrode, and adjacent two electrode blocks are mirror image and arrange.
The invention has the beneficial effects as follows: the present invention utilizes the structure of individual layer ITO to realize the function of many fingers touch-control, cost is low, by making fully coupling between electrode and electrode, signal intensity and the linearity of whole ITO layer have been significantly improved, can be applicable to large scale touch-screen field, and can solve the problem of large scale screen edge detection weak effect.
Description of drawings
Fig. 1 is the structural representation of individual layer ITO wire structures of the present invention one preferred embodiment;
In accompanying drawing, the mark of each parts is as follows: 1,2, electrode block, 11, the X electrode, 12, the Y electrode, 110,120, main body, 111,121, support body.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made more explicit defining.
See also Fig. 1, the embodiment of the present invention comprises:
The wire structures of a kind of individual layer ITO, be laid with several electrode blocks 1 on its ITO, each electrode block 1 comprises several X electrodes 11 and a Y electrode 12, X electrode 11 is followed successively by X1, X2 ... Y electrode 12 is followed successively by Y1, Y2 ... X electrode 11 on wherein equidirectional in each electrode block 1 interconnects, be connected on the pin of touch-control chip, be that X1 electrode in described electrode block 1 is connected with X1 electrode in electrode block 2, X2 electrode in described electrode block 1 is connected with X2 electrode in electrode block 2, and described Y electrode 12 is directly connected to the touch-control chip.Described X electrode 11 and Y electrode 12 all are laid in the homonymy of substrate, for fear of mutual conduction between described X electrode 11 and Y electrode 12, the marginal position of described touch-screen arranges bridge contact, by FPC(Flexible Printed Circuit, flexible PCB) the X electrode 11 on equidirectional is interconnected.Lower mask body is introduced the electrode structure of ITO.
The structure of described X electrode 11 and described Y electrode 12 includes a main body 110 and several support bodies 111 of unidirectional extension on the main body 110, and described support body 111 is mutual vertical with main body 110.The support body 111 of described X electrode 11 is in opposite directions with the direction that the support body of described Y electrode 121 extends, therefore several X electrodes 11 successively order be laid in gap between the support body 121 of a Y electrode 12, the support body 111 of described X electrode 11 forms equidistant gap with the mutual interlock of support body 121 of described Y electrode 12, and then increased contact area between X electrode 11 and Y electrode 12, by making fully coupling between electrode and electrode, significantly improve signal intensity and the sensitivity of whole ITO layer, improved the linearity effect of ITO layer.The number of the X electrode 11 that is complementary with described Y electrode 12, and the number of support body 111 in each X electrode 11, be to decide according to technological level (for example technique that is connected of ITO and FPC), the size of whole ITO and client's demand (for example linearity effect demand of ITO layer).For the matching that increases touch-screen and the antijamming capability of described electrode, the support body 111 of described X electrode 11 is identical with the support body of described Y electrode 12 121 sizes, so that whole ITO structure is symmetrical structure, is convenient to detect the coordinate of touch point.
Be laid with several electrode blocks 1 in ITO structure of the present invention, electrode on equidirectional in each electrode block 1 is connected, its tie point is arranged on FPC, and therefore above-mentioned electrode lay-out is useful on the large scale screen and uses, thus particular location stable, that detect fast touch points.In addition, adjacent two electrode blocks are mirror image to be arranged, and as shown in Figure 1, the X1 electrode in electrode block 1 is adjacent with the X1 electrode in electrode block 2, and the X2 electrode in electrode block 1 is adjacent with the X2 electrode in electrode block 2.Be laid with electrode block 1 and the electrode block 2 of several mutual mirror images in whole ITO structure, therefore the electrode in the edge of ITO is always Y electrode 12, such ITO structure both can be applicable to large scale screen field, can guarantee again touch effect and the linearity of ITO edge, solve the problem of large scale screen edge detection weak effect.
The above is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes instructions of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.

Claims (8)

1. the wire structures of an individual layer ITO, be laid with several electrode blocks on its ITO, each electrode block comprises several X electrodes and a Y electrode, it is characterized in that, several support bodies that described X electrode and Y electrode include a main body and a side is extended on the main body, the support body of described X electrode and Y electrode arranges in opposite directions, and several X electrodes order successively are laid in gap between several support bodies of a Y electrode, and adjacent two electrode blocks are mirror image and arrange.
2. the wire structures of individual layer ITO according to claim 1, is characterized in that, the support body size of the support body of described X electrode and Y electrode is identical.
3. the wire structures of individual layer ITO according to claim 1, is characterized in that, and is mutually vertical between described support body and described main body.
4. the wire structures of individual layer ITO according to claim 1, is characterized in that, between the support body of the support body of described X electrode and described Y electrode, mutual interlock forms the gap.
5. the wire structures of individual layer ITO according to claim 1, is characterized in that, the electrode that the edge of ITO lays is the Y electrode.
6. the wire structures of individual layer ITO according to claim 1 or 5, is characterized in that, described adjacent two X electrodes that are in the electrode block that mirror image arranges are adjacent with the X electrode.
7. the wire structures of individual layer ITO according to claim 1, is characterized in that, the X electrode on equidirectional in described each electrode block is connected on FPC.
8. the wire structures of individual layer ITO according to claim 7, is characterized in that, the bridge contact between described X electrode and described Y electrode is positioned on FPC.
CN2013100304360A 2013-01-28 2013-01-28 Single layer indium tin oxide (ITO) wiring structure Pending CN103092423A (en)

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Application Number Priority Date Filing Date Title
CN2013100304360A CN103092423A (en) 2013-01-28 2013-01-28 Single layer indium tin oxide (ITO) wiring structure

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017004846A1 (en) * 2015-07-06 2017-01-12 武汉华星光电技术有限公司 Liquid crystal display with touch control function, and conducting layer structure thereof
CN106547413A (en) * 2015-09-21 2017-03-29 矽创电子股份有限公司 Capacitive touch device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101833404A (en) * 2009-12-24 2010-09-15 友达光电股份有限公司 Touch display device and touch device
CN102282534A (en) * 2009-01-19 2011-12-14 Lg伊诺特有限公司 Input device
CN102292694A (en) * 2009-01-21 2011-12-21 Lg伊诺特有限公司 Input apparatus
CN102622129A (en) * 2012-02-29 2012-08-01 苏州瀚瑞微电子有限公司 Wiring structure of induction layer
CN202634878U (en) * 2012-04-28 2012-12-26 苏州瀚瑞微电子有限公司 Multi-layer routing layout for capacitance type touch-controlled IC
CN202649986U (en) * 2012-02-16 2013-01-02 洋华光电股份有限公司 Capacitive touch apparatus
CN202649988U (en) * 2012-06-18 2013-01-02 深圳市海富微电子有限公司 Capacitive touch screen with single-layer of line structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102282534A (en) * 2009-01-19 2011-12-14 Lg伊诺特有限公司 Input device
CN102292694A (en) * 2009-01-21 2011-12-21 Lg伊诺特有限公司 Input apparatus
CN101833404A (en) * 2009-12-24 2010-09-15 友达光电股份有限公司 Touch display device and touch device
CN202649986U (en) * 2012-02-16 2013-01-02 洋华光电股份有限公司 Capacitive touch apparatus
CN102622129A (en) * 2012-02-29 2012-08-01 苏州瀚瑞微电子有限公司 Wiring structure of induction layer
CN202634878U (en) * 2012-04-28 2012-12-26 苏州瀚瑞微电子有限公司 Multi-layer routing layout for capacitance type touch-controlled IC
CN202649988U (en) * 2012-06-18 2013-01-02 深圳市海富微电子有限公司 Capacitive touch screen with single-layer of line structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017004846A1 (en) * 2015-07-06 2017-01-12 武汉华星光电技术有限公司 Liquid crystal display with touch control function, and conducting layer structure thereof
CN106547413A (en) * 2015-09-21 2017-03-29 矽创电子股份有限公司 Capacitive touch device
CN106547413B (en) * 2015-09-21 2020-03-10 矽创电子股份有限公司 Capacitive touch device

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Application publication date: 20130508