CN103091776B - Integrated light wave waveguide beam formed chip controlled by signal phase shifter and prepared method - Google Patents
Integrated light wave waveguide beam formed chip controlled by signal phase shifter and prepared method Download PDFInfo
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- CN103091776B CN103091776B CN201310047050.0A CN201310047050A CN103091776B CN 103091776 B CN103091776 B CN 103091776B CN 201310047050 A CN201310047050 A CN 201310047050A CN 103091776 B CN103091776 B CN 103091776B
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000206 photolithography Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 5
- 230000000243 photosynthetic effect Effects 0.000 abstract 4
- 239000012792 core layer Substances 0.000 abstract 2
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Abstract
The invention relates to an integrated light wave waveguide beam formed chip controlled by a signal phase shifter and a prepared method. The chip comprises a substrate layer and a covering layer. A core layer is arranged on one side of the coving layer which faces to the substrate layer. The core layer is provided with an optical branching device, a waveguide array, a photosynthetic beam device and a delay module. The coving layer is provided with a phase shifter which is covered above the waveguide array. The optical branching device is used for receiving outer light source of the chip and are divided into multichannel optical signals evenly. The waveguide array is used for receiving the multichannel optical signals. When the multichannel optical signals pass through the waveguide array, phases are readjusted due to different working voltage of the phase shifter which is covered above the waveguide array and enter the photosynthetic beam device to interfere, so different phase combinations of the multichannel optical signals correspond to different output ports of the photosynthetic beam device. The delay module receives the output of the photosynthetic beam device and corresponds to different delay amount, so switchover of chip delay amount is achieved through controlling the phase shifter. The invention further relates to the prepared method of the chip.
Description
Technical field
The present invention relates to Wave beam forming chip, particularly relate to the integrated light guide Wave beam forming chip that a kind of single phase shifter controls.
Background technology
Integrated light guide Wave beam forming chip is mainly used in phased array radar system, to overcome traditional aperture effect intrinsic based on the phased-array radar of electric phase-shifter and the restriction of transit time, large instant bandwidth is realized under large area scanning angle, simultaneously at raising radar resolution, recognition capability, solve multi-target imaging, electromagnetism interference, simplify structure, reduce the aspects such as volume and there is huge advantage, optical fiber can be adopted, integrated light guide, liquid crystal, MEMS (micro electro mechanical system) etc. realize the Real-time Delay of microwave-modulated light carrier wave, from reduction system bulk, the aspects such as weight reduction and optimization system structure are considered, the main flow that fiber delay line and integrated light guide delay line will be optical delay line technical development.
2002, the R.T.Chen of university texas at austin proposed the continuous variable light Real-time Delay module antenna system based on waveguide and holographic optical elements (HOE), and has carried out experimental demonstration.In integrated light guide Wave beam forming chip, the control module of its core is Multichannel photoswitch, for a N-bit light time delay chip, needs use 1x2
nmultichannel photoswitch.Mostly the integrated light guide Wave beam forming chip light path handoff functionality reported at present is to be realized by multiple 1x2/2x2 photoswitches of cascade, this conceptual design is simple, extendability is strong, but along with the increase of switch port, inevitably encounter problems in insertion loss, speed, power consumption etc.
Summary of the invention
The object of the present invention is to provide a kind of integrated waveguide Wave beam forming chip, utilize integrated light guide technology to realize the simple and fast of light amount of delay, control accurately.
The present invention realizes like this, the integrated light guide Wave beam forming chip that a kind of single phase shifter controls, it comprises substrate layer and overlayer, and this cover layer face is provided with sandwich layer on the side of this substrate, and this sandwich layer is provided with optical branching device, optical waveguide array, combiner device and time delay module; This overlayer is provided with the phase shifter be covered in above this optical waveguide array; This optical branching device for receiving this chip exterior light source, and is divided into multipath light signal uniformly; This optical waveguide array receives this multipath light signal, this multipath light signal is through this optical waveguide array, because covering the different operating voltage of the phase shifter above this optical waveguide array, after phase place is readjusted, enter this combiner device to interfere, the different phase combination of this multipath light signal is to should the different output port of combiner device; The output that this time delay module receives this combiner device correspond to different amount of delay, and the switching of this chip amount of delay is realized by controlling this phase shifter.
As the further improvement of such scheme, this optical branching device is multi-mode interferometer, when the incident light port of this optical branching device is positioned in the middle of multi-mode interferometer, realizes the mean allocation of luminous power in the shortest interference length.
Preferably, the shortest interference distance of this shunt is that a bat is long.
Again preferably, this chip exports from intersection state to obtain light under quiescent conditions, and on the direction of incident light port being parallel to this optical branching device, the length of this combiner device is the twice of the length of this optical branching device.
As the further improvement of such scheme, this time delay module comprises the different curved waveguide array of amount of delay, and multiple waveguides of this curved waveguide array are connected to multiple output ports of this combiner device.
As the further improvement of such scheme, this optical waveguide array is straight wave guide array.
The method for making of the integrated light guide Wave beam forming chip that the present invention also provides above-mentioned single phase shifter to control, it comprises the following steps:
First, provide a substrate, this substrate comprises lower limit layer, silicon on insulator layer, and this lower limit layer is this substrate;
Secondly, on which insulating layer silicon layer completes the making of optical branching device, optical waveguide array, combiner device and time delay module, etching depth is the thickness of this silicon on insulator layer, and namely this silicon on insulator layer is made into this sandwich layer;
Then, on which insulating layer silicon layer sputters one deck SiO
2layer is as this overlayer;
Afterwards, on this overlayer thermal evaporation layer of metal Cr/Cu as the surface of this substrate;
Then, the surface of this substrate completes the making of phase shifter, namely complete this chip manufacturing.
As the further improvement of such scheme, this method for making comprises the following steps:
First, a lower limit layer thickness 2 microns is provided, substrate that silicon on insulator layer thickness is 250 nanometers;
Secondly, photoetching and wet etching or dry etching technology is utilized to shift pattern on first piece of photolithography plate on this silicon on insulator layer, etching depth is 250 nanometers, complete the making of sandwich layer, the pattern on this first piece of photolithography plate corresponds to the making of optical branching device, optical waveguide array, combiner device and time delay module;
Then, PECVD technology is utilized on which insulating layer silicon layer to sputter the SiO of one deck 1.5 micron thickness
2layer is as this overlayer;
Afterwards, on this overlayer thermal evaporation layer of metal Cr/Cu as the surface of this substrate;
Then, utilize photoetching and wet etching or dry etching technology to shift the figure of second piece of photolithography plate on the surface of this substrate, complete the making of phase shifter, namely complete this chip manufacturing, the figure of this second piece of photolithography plate corresponds to the making of phase shifter.
Compared with prior art, integrated light guide Wave beam forming chip that single phase shifter of the present invention controls and preparation method thereof, be integrated with the photoswitch of a multichannel, and this photoswitch only needs control phase shifter can complete the switching of all retardations, that is the switching of retardation is controlled by a phase shifter, integrated level is high, control is simple, in phased array antenna application have clear superiority.
Accompanying drawing explanation
The principle schematic of the integrated light guide Wave beam forming chip that single phase shifter that Fig. 1 provides for better embodiment of the present invention controls.
Fig. 2 is the structural representation of the integrated light guide Wave beam forming chip that in Fig. 1, single phase shifter controls.
The structural representation of first piece of photolithography plate that the integrated light guide Wave beam forming chip that Fig. 3 controls for phase shifter single in construction drawing 2 uses.
The structural representation of second piece of photolithography plate that the integrated light guide Wave beam forming chip that Fig. 4 controls for phase shifter single in construction drawing 2 uses.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Refer to Fig. 1, the integrated light guide Wave beam forming chip that single phase shifter that better embodiment of the present invention provides controls comprises substrate layer 1 and overlayer 2, and this overlayer 2 is provided with sandwich layer on the side of this substrate 1.This sandwich layer is provided with optical branching device 3, optical waveguide array 4, combiner device 5 and time delay module 6; This overlayer 2 is provided with the phase shifter 7 be covered in above this optical waveguide array 4.
Incorporated by reference to Fig. 2, this optical branching device 3 for receiving this chip exterior light source, and is divided into multipath light signal uniformly; This optical waveguide array 4 receives this multipath light signal, this multipath light signal is when this optical waveguide array 4, because covering the different operating voltage of the phase shifter 7 above this optical waveguide array 4, after phase place is readjusted, enter this combiner device 5 to interfere, the different phase combination of this multipath light signal is to should the different output port of combiner device 5; The output that this time delay module 6 receives this combiner device 5 correspond to different amount of delay, and the switching of this chip amount of delay is realized by controlling this phase shifter 7.
In the present embodiment, time delay module 6 is curved waveguide array, and optical waveguide array 4 is straight wave guide array; Certainly, in other embodiments, time delay module 6 also can be optical resonator array.
As the Core Feature of chip of the present invention, the control of light amount of delay is by realizing the switching in incident light transmission path, the core devices wherein used-highly integrated optical waveguide switch forms primarily of optical branching device 3, optical waveguide array 4 and phase shifter 7, bundling device 5, if Fig. 1 grey area is the projection of the phase shifter 7 covered above optical waveguide array 4.
Optical branching device 3 is responsible for realizing the mean allocation to luminous power, and wherein input port is selected in the middle of multimode interference, can realize the mean allocation of luminous power in the shortest interference length.When incident light port is in the middle of multimode interference, the shortest interference distance is one and claps long, and exports from intersection state to obtain light under quiescent conditions, and the length L of combiner device 5 is 2 times of the length of optical branching device 3 i.e. 2L.
Incident light is after optical branching device 3, be divided into N part (as shown in Figure 1) uniformly, N road light signal is when optical waveguide array 4, cover the operating voltage that phase shifter 7 above optical waveguide array 4 is different, phase place is readjusted, enter combiner device 5 to interfere, the output port that different phase combination is corresponding different, namely correspond to different amount of delay.
Under original state, can export from N port from the light of a port incidence of optical branching device 3, if need to be switched to the port being numbered k, so need the phase place applied on the phase displacement arm n of phase shifter 7 to be changed to:
can prove, be switched to that different port applies on phase shift arm phase relation there is following relation
a is integer, from then on can find out in formula, be switched to different port, utilizes the periodicity of phase place, and each arm phase place change that different on off states is corresponding exists ratio.
More simply can state as, such as light path switches k, k ' port, the modulation voltage of needs is respectively
arbitrarily all proportional between the two and have a common divisor.This means: this common divisor can be defined as a single combination phase displacement arm, by controlling the multiple proportion of this phase displacement arm, can realize controlling light wave and being switched to any one port.
Below for 2-bit Wave beam forming chip, operating characteristic of the present invention and production program are described.For common SOI (silicon-on-insulator) material, choose the principle of work of phase shifter 7 based on thermo-optic effect, as long as any mode that can change phase of light wave can be used, but be only limitted to absolutely not this embodiment.Make 2-bit integrated light guide Wave beam forming chip solution as follows, its operating diagram as shown in Figure 2, so according to formula, can calculate, treat and get out lower limit layer thickness 2 microns, silicon on insulator layer thickness is the substrate of 250nm, first utilizing photoetching and wet etching or dry etching technology to shift etching depth on the upper pattern to silicon on insulator layer of first piece of photolithography plate (as shown in Figure 3) is 250nm, complete the optical branching device 3 of sandwich layer, optical waveguide array 4, the making of combiner device 5 and time delay module 6, namely photoswitch and the waveguide of array delay line of 1X4 is comprised, then PECVD technology is utilized to sputter the SiO of one deck 1.5 micron thickness
2layer is as overlayer 2, the Cr/Cu of thermal evaporation layer of metal afterwards, then utilize photoetching and wet etching or dry etching technology to shift the figure (as shown in Figure 4) of second piece of photolithography plate to substrate surface, complete phase shifter 7 and make, can this element manufacturing be completed.
Integrated light guide Wave beam forming chip that single phase shifter of the present invention controls and preparation method thereof, be integrated with the photoswitch of a multichannel, and this photoswitch only needs control phase shifter can complete the switching of all retardations, that is the switching of retardation is controlled by a phase shifter, integrated level is high, control is simple, in phased array antenna application have clear superiority.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the integrated light guide Wave beam forming chip of single phase shifter control, it comprises substrate layer and overlayer, this cover layer face is provided with sandwich layer on the side of this substrate, it is characterized in that, this sandwich layer is provided with optical branching device, optical waveguide array, combiner device and time delay module; This overlayer is provided with the phase shifter be covered in above this optical waveguide array; This optical branching device for receiving this chip exterior light source, and is divided into multipath light signal uniformly; This optical waveguide array receives this multipath light signal, this multipath light signal is through this optical waveguide array, because covering the different operating voltage of the phase shifter above this optical waveguide array, after phase place is readjusted, enter this combiner device to interfere, the different phase combination of this multipath light signal is to should the different output port of combiner device; The output that this time delay module receives this combiner device correspond to different amount of delay, and the switching of this chip amount of delay is realized by controlling this phase shifter.
2. the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 1, it is characterized in that, this optical branching device is multi-mode interferometer, when incident light port is positioned in the middle of multi-mode interferometer, realizes the mean allocation of luminous power in the shortest interference length.
3. the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 2, is characterized in that, the shortest interference distance of this multi-mode interferometer is one and claps long.
4. the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 3, it is characterized in that, this chip exports from intersection state to obtain light under quiescent conditions, on the direction of incident light port being parallel to this optical branching device, the length of this combiner device is the twice of the length of this optical branching device.
5. the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 1, it is characterized in that, this time delay module comprises the different curved waveguide array of amount of delay, and multiple waveguides of this curved waveguide array are connected to multiple output ports of this combiner device.
6. the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 1, it is characterized in that, this optical waveguide array is straight wave guide array.
7., as a method for making for the integrated light guide Wave beam forming chip of the single phase shifter control in claim 1 to 6 as described in any one, it is characterized in that, it comprises the following steps:
First, provide a substrate, this substrate comprises lower limit layer, silicon on insulator layer, and this lower limit layer is this substrate layer;
Secondly, on which insulating layer silicon layer completes the making of optical branching device, optical waveguide array, combiner device and time delay module, etching depth is the thickness of this silicon on insulator layer, and namely this silicon on insulator layer is made into sandwich layer;
Then, on which insulating layer silicon layer sputters one deck SiO
2layer is as overlayer;
Afterwards, on this overlayer thermal evaporation layer of metal Cr/Cu as the surface of this substrate;
Then, the surface of this substrate completes the making of phase shifter, namely complete this chip manufacturing.
8. the method for making of the integrated light guide Wave beam forming chip of single phase shifter control as claimed in claim 7, it is characterized in that, this method for making comprises the following steps:
First, a lower limit layer thickness 2 microns is provided, substrate that silicon on insulator layer thickness is 250 nanometers;
Secondly, photoetching and wet etching or dry etching technology is utilized to shift pattern on first piece of photolithography plate on this silicon on insulator layer, etching depth is 250 nanometers, complete the making of sandwich layer, the pattern on this first piece of photolithography plate corresponds to the making of optical branching device, optical waveguide array, combiner device and time delay module;
Then, PECVD technology is utilized on which insulating layer silicon layer to sputter the SiO of one deck 1.5 micron thickness
2layer is as this overlayer;
Afterwards, on this overlayer thermal evaporation layer of metal Cr/Cu as the surface of this substrate;
Then, utilize photoetching and wet etching or dry etching technology to shift the figure of second piece of photolithography plate on the surface of this substrate, complete the making of phase shifter, namely complete this chip manufacturing, the figure of this second piece of photolithography plate corresponds to the making of phase shifter.
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Cited By (1)
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| CN106773028A (en) * | 2017-01-16 | 2017-05-31 | 吉林省长光瑞思激光技术有限公司 | A kind of laser beam scanning system |
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