CN103088412B - The reacting furnace of etching roasting plant - Google Patents
The reacting furnace of etching roasting plant Download PDFInfo
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- CN103088412B CN103088412B CN201310036565.0A CN201310036565A CN103088412B CN 103088412 B CN103088412 B CN 103088412B CN 201310036565 A CN201310036565 A CN 201310036565A CN 103088412 B CN103088412 B CN 103088412B
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Abstract
The invention provides a kind of reacting furnace etching roasting plant, described reacting furnace comprises reaction chamber assembly, heating component and cooling package, and wherein, described reaction chamber assembly comprises reaction hood, described reaction hood is provided with breather pipe, and reacting gas is input to reaction hood inside by described breather pipe; Described heating component comprises infrared lamp assembly, and described infrared lamp assembly is arranged on outside described reaction hood; Described cooling package surrounds described heating component and arranges.Adopt the reacting furnace according to invention, reacting furnace can be made to make, and the temperature stabilization in reaction chamber is even, heating is short for reaction time, thus extends the useful life of graphite plate.
Description
Technical field
The present invention relates to a kind of reacting furnace etching roasting plant, particularly relate to the reacting furnace of a kind of chlorine etching roasting plant, after removing the growth of MOCVD epitaxy technique, be deposited on the residues such as the gallium nitride on graphite plate surface, and may be used for the epitaxial loayer removing epitaxial wafer substrate surface.
Background technology
Metal organic chemical vapor deposition equipment (being called for short MOCVD) carries out chemical deposition reaction in pyrolysis mode on substrate, grow the thin layer monocrystal material of various III-V race, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution, graphite plate is as the carrying platform of substrate, unnecessary chemical reaction residue deposition is had at graphite plate on the surface in this course of reaction, if do not removed, corresponding temperature control, surface particles etc. will inevitably be affected in a new stove epitaxial wafer growth course, and finally have influence on the rate of finished products of epitaxial wafer growth.In addition in epitaxial wafer growth course, have a large amount of substrate slices to scrap because growing the qualified epitaxial wafer of not mass, because there is no the epitaxial substrate sheet etching apparatus of specialty, epitaxial loayer chemical sediment on these underproof epitaxial wafers cannot be etched effectively, cannot reuse such substrate slice, cause a large amount of cost wastes and loss.
In the market also less than the special equipment carrying out for MOCVD and epitaxial wafer etching, cleaning, the graphite plate clean method used in the industry at present adopts vacuum sintering furnace to carry out the mode of long-time high-temperature baking usually, there is the time long (single heat about 14 hours) of single heat baking, baking temperature too high (maximum temperature about 1400 degree) affects the problems such as the life-span that graphite plate recycles, and cannot etch the epitaxial substrate sheet of scrapping produced in technique growth course simultaneously.Such equipment volume is larger in addition, takies larger installation and usage space in cleaning shop.This equipment is use the mode of high temperature sintering gallium nitride residue physical property dust formation in the operation principle of toasting graphite plate, can produce a large amount of dust, can remain in reacting furnace in a large number simultaneously after operation, so this kind equipment needs often to safeguard and clean.In order to solve the deficiency of usual baking tray equipment, a kind of new equipment is now provided, i.e. chlorine etching roasting plant, this equipment utilizes chlorine or gas chlorination thing, under the condition of uniform temperature, etching reaction is carried out to graphite plate or epitaxial substrate sheet, and finally reach the surperficial function of carrying out effective cleaning and the bad epitaxial loayer on extension substrate slice surface being carried out to effectively etching of graphite plate.
Usual graphite plate and epitaxial substrate sheet are that the reacting furnace being placed on etching roasting plant cleans inside, this reacting furnace is the core of equipment, his various functions such as composition structure, heating, cooling is all extremely important, must meet and guarantee equipment normally runs and security needs.
Summary of the invention
For solving problems of the prior art, the invention provides a kind of reacting furnace etching roasting plant, reacting furnace comprises reaction chamber assembly, heating component and cooling package, wherein, reaction chamber assembly comprises reaction hood and reaction hood holder, reaction hood is provided with breather pipe, and reacting gas is input to reaction hood inside by breather pipe, reaction hood described in described reaction hood holder fixed bearing; The bottom side of described reaction hood is opened wide, and described reaction hood is made up of quartz material, and graphite plate or epitaxial substrate sheet are placed in described reaction hood with vertical state; Heating component comprises infrared lamp assembly and reflection plate assembly, described infrared lamp assembly and reflection plate assembly are arranged on outside reaction hood, and described infrared lamp assembly comprises infrared lamp, the supporting infrared lamp holder of infrared lamp and the reflecting plate of fixing infrared lamp holder; Cooling package surrounds heating component and arranges, and described cooling package comprises circulated air cooling system and water cooling system, and described water cooling system comprises the cooling water pipe be arranged on heating component and the water cavity being arranged in reaction hood holder.
According to an aspect of the present invention, infrared lamp assembly can comprise multiple infrared lamp, and these infrared lamps are configured to shunt circuit to carry out zone temperature control.
According to an aspect of the present invention, circulated air cooling system construction one-tenth passes into air-flow and cools the parts in reacting furnace, and water cooling system is configured with cooling water pipe, and cooling water pipe passes into cooling water to cool the parts in reacting furnace.
According to another aspect of the present invention, reflecting plate is arranged on upside and the surrounding side of reaction hood, and the outside of reflecting plate is fixed with coldplate, and cooling water pipe dish is located at the outside of coldplate.
According to another aspect of the present invention, circulated air cooling system comprises the top pneumatic trough be positioned at above reaction chamber assembly; Be positioned at the bottom pneumatic trough below reaction chamber assembly; Be communicated with the wind chamber between top pneumatic trough and bottom pneumatic trough, wind chamber is positioned at reaction chamber assembly and heating component surrounding.Preferably, circulated air cooling system also comprises: heat exchanger, and this heat exchanger is connected to the downstream of bottom pneumatic trough; And be serially connected in circulated air cooling system, that airflow circulating is moved air blast.
According to a further aspect of the invention, reaction chamber assembly also comprises: openable bottom, this bottom is provided with the exhaust gas channel being communicated with reaction chamber that be positioned at reaction chamber assembly, that hold graphite plate or epitaxial substrate sheet, and bottom is sealably coupled on reaction hood holder.Preferably, reaction hood is fixed on reaction hood holder by resistant to elevated temperatures sealing ring by reaction hood.
Preferably, circulated air cooling system construction one-tenth passes into air-flow and cools the parts in reacting furnace, the top pneumatic trough of circulated air cooling system bits above reaction chamber assembly; Be positioned at the bottom pneumatic trough below reaction chamber assembly; Be communicated with the wind chamber between top pneumatic trough and bottom pneumatic trough, wind chamber is positioned at reaction chamber assembly and heating component surrounding.
According to a further aspect of the invention, bottom is provided with pressure detecting mouth, and the flow passing into the reacting gas in reaction hood is controlled so as to make the pressure in reaction chamber internal pressure and wind chamber roughly equal.
According to a further aspect of the invention, reacting gas is passed into by breather pipe, reacting gas comprise in chlorine and gaseous chlorine compounds one or more.
According to a further aspect of the invention, a slice or two panels graphite plate is placed in reacting furnace.
According to a further aspect of the invention, described reacting furnace is configured to the in-furnace temperature in the course of reaction of described reacting furnace to control in the scope of 500 DEG C-800 DEG C.
Adopt the reacting furnace according to invention, preferably can control temperature stabilization in reaction chamber even, maximum temperature controls at about 800 degree, and single heat controls in 3 hours heating cycle, thus can useful life of proper extension graphite plate.
Accompanying drawing explanation
Fig. 1 is the stereogram of the reacting furnace according to one embodiment of the invention, and its shell is removed, to illustrate its internal structure.
Fig. 2 is the sectional view of the reacting furnace shown in Fig. 1.
Another cutaway view that Fig. 3 is the reacting furnace shown in Fig. 1, this analyses and observe orientation shown in the relative Fig. 2 in orientation in having turned 90 degree.
Fig. 4 shows the stereogram that can be placed on according to the graphite plate in reacting furnace of the present invention and supporting tool thereof.
Fig. 5 is the principle of heating figure according to infrared lamp assembly of the present invention.
Fig. 6 is the schematic diagram of the water cooling system according to reacting furnace of the present invention.
Fig. 7 is the sectional view according to reflection plate assembly of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described; set forth more details in the following description so that fully understand the present invention; but the present invention obviously can implement with multiple this alternate manner described that is different from; those skilled in the art can when doing similar popularization, deduction without prejudice to when intension of the present invention according to practical situations, therefore should with content constraints protection scope of the present invention of this specific embodiment.
The reacting furnace 10 etching roasting plant according to the present invention mainly comprises three members: reaction chamber assembly 100, heating component 200 and cooling package.Heating component 200 is arranged on reaction chamber assembly 100 periphery usually, and cooling package is arranged on again the periphery of heating component 200.According to a specific embodiment of the present invention, reaction chamber assembly 100 comprises the reaction hood 110 be made up of quartz, heating component 200 comprises infrared lamp assembly 210, and cooling package comprises the circulated air cooling system 310 and water cooling system 350 that arrange around heating component 200.Heating component 200 pairs of reaction chamber assemblies 100, be particularly placed in graphite plate 600 in reaction chamber assembly 100 or epitaxial substrate sheet (usually; the placement of epitaxial substrate sheet correspondence is adsorbed in the film trap on graphite plate; together be placed in reacting furnace 10 with graphite plate 20; but this is not restrictive; epitaxial substrate sheet also can be placed on separately in reacting furnace 10 by special frock) heat; and cooling package cools infrared lamp assembly 210 and relevant miscellaneous part; protection infrared lamp 212, extends infrared lamp 212 useful life.Below, these three assemblies are described specifically.
Reaction chamber assembly
Reaction chamber assembly 100 comprises: reaction hood 110, and the top side of this reaction hood 110 is provided with breather pipe 111, and the bottom side of reaction hood 110 is opened wide; Reaction hood holder 120, reaction hood holder 120 fixed bearing reaction hood 110; And openable bottom 130, this bottom 130 is provided with the exhaust gas channel 132 being communicated with reaction chamber 150, and bottom 130 is sealably coupled on reaction hood holder 120.
Reaction hood 110 is arranged to that top side is closed, the structure of bottom-open usually, the top side of reaction hood 110 is provided with breather pipe 111, by being arranged on the breather pipe 111 of reaction hood 110 top side, the gas needed for such as nitrogen, chlorine or chloride and so on react can be transported in reaction chamber 150.Preferably, the top of reaction hood 110 is provided with at least one deck, preferably two-layer port plate 112, and port plate 112 is provided with some through holes, opens to pass into equably in reaction chamber 150 for making the gas dispense passed into.The setting position of through hole, size, quantity can design as required and determine.Preferably, when there being two-layer port plate 112, the lead to the hole site on the through hole on upper strata port plate 112 and lower floor's port plate 112 staggers.Reaction hood 110 is preferably made up of quartz material, and each several part of quartz reaction cover 110 can adopt the mode of welding to realize.In addition, reaction hood 110 top is also provided with middle siphunculus 115, directly extend in reaction chamber 150 for making temperature thermocouple 140.
Reaction hood holder 120 in reaction chamber assembly 100 is arranged on the equipment platform 400 in etching roasting plant 10, for fixed bearing reaction hood 110.As a kind of embodiment, the lower end of reaction hood 110 is provided with flange part 116, reaction hood 110 is fixed on reaction hood holder 120 by reaction hood 110 engages reaction hood 110 lower end flange part 116 by trim ring 160, and be provided with resistant to elevated temperatures seal in the junction surface of flange part 116 and trim ring 160, as O type circle.Reaction hood holder 120 has the first mating surface facing top, and the end face of the lower end opened wide of the first mating surface and reaction hood 110 is combined together.Reaction hood holder 120 has the second mating surface of faced downwards.According to preferred embodiment of the present invention, the second mating surface is formed with stage portion, and the second mating surface is divided into two parts by stage portion, and wherein a part for the second mating surface coordinates with equipment platform 400, and another part of the second mating surface coordinates with bottom 130.Further, between bottom 130 and the second mating surface, seal is provided with, as O type circle, in case gas in reaction chamber 150 or heat leak.
The bottom 130 of reaction chamber assembly 100 is provided with exhaust gas channel 132, and the entrance of exhaust gas channel 132 is communicated with reaction chamber 150, flows out reaction chamber 150 for making the gas in reaction chamber 150.The entrance of exhaust gas channel 132 is arranged on the centre position of bottom 130 part corresponding with the bottom side opened wide of reaction hood 110 usually.The outlet of exhaust gas channel 132 connects a unidirectional valve 170, to be discharged in corresponding plant area waste gas system (not shown).In the present embodiment, unidirectional valve 170 is mounted on equipment platform 400, and exhaust gas channel 132 is connected to equipment platform 400 and be communicated with unidirectional valve 170.
Bottom 130 is fastened to below equipment platform 400 by multiple rotation clamping cylinder 180.According to preferred embodiment of the present invention, rotate clamping cylinder 180 and be provided with three, certainly, the cylinder of other fair amounts is also feasible, such as two or four etc.Rotating clamping cylinder 180 is fixed on the downside of equipment platform 400, rotate clamping cylinder 180 and there is claw, after rotation clamping cylinder 180 and claw tighten, claw crimps the auxiliary briquetting 136 be positioned on bottom 130, thus reach the function of sealing, to meet the needs of equipment normal heating reaction.
In addition, bottom 130 is also provided with pressure detecting mouth, in order to the chamber pressure in the inner space of detection reaction chamber component 100, to ensure that equipment normally runs, particularly when use quartz reaction cover 110 time, in case reaction hood 110 due to cover inside and outside differential pressure excessive and cracked.
Heating component
According to preferred embodiment of the present invention, heating component 200 comprises infrared lamp assembly 210 and reflection plate assembly 220.Infrared lamp assembly 210 comprises the first infrared lamp assembly portion and the second infrared lamp assembly portion, they are separately positioned on the outside of the two opposite side surfaces of reaction chamber assembly 100, namely reaction chamber assembly 100 is roughly between two infrared lamp assembly portion, as shown in Figure 1, two infrared lamp assembly portion to be arranged in four outer peripheral faces of reaction hood 110 on two larger sides.Infrared lamp assembly 210 comprises infrared lamp 212, for supporting infrared lamp 212 holder of infrared lamp 212 and the reflecting plate of fixing infrared lamp 212 holder.Two sides place less in four outer peripheral faces of reaction hood 110, is provided with reflection plate assembly 220, but does not arrange infrared lamp assembly 210, and reflection plate assembly 220 is for reflecting the heat sent by infrared lamp assembly 210.
Preferably, the multiple infrared lamps 212 in infrared lamp assembly 210 can be configured to shunt circuit to carry out subregion temperature control.Fig. 5 is the principle of heating figure according to infrared lamp assembly 210 of the present invention, and as shown in the figure, multiple infrared lamp 212 has been divided into eight road parallel lines, but this is exemplary, also can by specifically needing setting.Multi-channel parallel circuit is better can be divided into three districts and carry out temperature control, temperature controlled region arranges from top to down, thermometric can be carried out to three districts by the temperature measurement component extend into from the siphunculus 115 of reaction hood 110 top side in reaction hood 110, thus carry out corresponding temperature control, to make the homogeneous temperature in reaction chamber 150.
Cooling package
In reacting furnace 10 of the present invention, cooling package comprises circulated air cooling system 310 and water cooling system 350, circulated air cooling system 310 is configured to pass into air-flow and cools the parts in reacting furnace 10, and water cooling system 350 is configured to pass into cooling water and cools the parts in reacting furnace 10.
Circulated air cooling system 310 comprises: be positioned at the top pneumatic trough 312 above reaction chamber assembly 100; Be positioned at the bottom pneumatic trough 314 below reaction chamber assembly 100; Be communicated with the wind chamber between top pneumatic trough 312 and bottom pneumatic trough 314, wind chamber is positioned at reaction chamber assembly 100 and heating component 200 surrounding, and the air-flow introduced in wind chamber can cool heating component 200.According to a preferred embodiment of the present invention, circulated air cooling system 310 also comprises: external or built-in heat exchanger, and this heat exchanger can be connected to the downstream of bottom pneumatic trough 314; And be serially connected in circulated air cooling system 310, that airflow circulating is moved air blast.Like this, under air blast drives, air-flow is passed in top pneumatic trough 312 by the import 313 of top pneumatic trough, subsequently, air-flow flow in the wind chamber of reaction chamber assembly surrounding vertically downward, and enter corresponding interior air channel, heating component 200 is cooled, air-flow then flow in the pneumatic trough 314 of bottom downwards, and leave reaction chamber 150 by the outlet 315 of bottom pneumatic trough, then, the air-flow that have collected heat will flow to heat exchanger, in heat exchanger, the temperature of air-flow is declined, such as decline about about 10 degree, be re-circulated to top pneumatic trough 312 subsequently for performing cooling effect.
In addition, circulated air cooling system 310 also can connect one and mend wind passage, this benefit wind channel setting, between bottom pneumatic trough 314 and heat exchanger, for adding in circulating current by temperature lower than the cryogenic gas of the gas flow temperature entering heat exchanger, is constantly accumulated to avoid heat in recyclegas.
Wind chamber in circulated air cooling system 310 comprises reflecting surface wind chamber 319 and heating surface wind chamber 318, wherein reflecting surface wind chamber 319 is arranged on the first reflecting surface wind chamber 319 and the second reflecting surface wind chamber 319 of two opposite sides being provided with reflecting plate, and heating surface wind chamber 318 comprises the first heating surface wind chamber 318 and the second heating surface wind chamber 318 being arranged on two opposite sides being provided with infrared lamp assembly 210.Reflecting surface wind chamber 319 by the cooling air after flow from two wind chambeies, enter inner corresponding air channel, the blank area of infrared lamp 212 is cooled; And interior wind chamber is led to by distributing construction in the first heating surface wind chamber 318 and the second heating surface wind chamber 318, to cool the infrared lamp 212 in infrared lamp assembly 210 and the reaction hood 110 that formed reaction chamber, the quartz ampoule explosion that infrared lamp 212 can be avoided thus to cause because heating part temperature is too high, in addition, can also cool accordingly the lamp bowl reflecting surface part of infrared lamp 212.
Water cooling system 350 can comprise the cooling water pipe 353 be arranged on heating component 200 and the water cavity 356 being arranged in reaction hood holder 120.According to a preferred version of the present invention, reflecting plate 222 in heating component 200 comprises the reflecting plate in infrared lamp assembly 210 and the reflecting plate in reflection plate assembly, usually the reflecting plate being provided with infrared lamp is thicker than the reflecting plate of non-installation infrared fluorescent tube, is beneficial to supporting infrared lamp like this.These reflecting plates can be separately positioned on upside (upside of reaction hood does not arrange infrared lamp heat pipe usually) and the surrounding side of reaction hood 110, the outside of reflecting plate 222 can be fixed with coldplate 352, coldplate 352 such as can be made up of brass, and cooling water pipe 353 is located at the outside of coldplate 352 by predetermined length dish.Fixing between reflecting plate and coldplate 352 can by means of the threaded fastener of such as bolt and nut and so on.The cooling water pipe 353 of each side exports 355 with an entrance 354 be connected with one respectively, so that input and output cooling water respectively.Usually, the entrance of cooling water pipe 353 354 and outlet 355 all through the outside pass-out of shell of reacting furnace 10, to connect corresponding supply source and exhaust system.
Water cavity 356 in reaction hood holder 120 has been shown in Fig. 2, water cavity 356 is provided with water cavity entrance and water cavity outlet, water cavity entrance and water cavity outlet all can be arranged at the below of equipment platform 400, the cooling agent of such as water and so on inputs again from water cavity outlet output thus at water cavity 356 Inner eycle from water cavity entrance, thus encloses cooling effect to O type especially.
Fig. 6 is the schematic diagram of the water cooling system 350 according to reacting furnace 10 of the present invention.Water cavity 356 in five cooling water pipes 353 and reaction hood holder 120 can be arranged in parallel and form the water cooling system of reacting furnace 10, but also can adjust the setting position of cooling water pipe and area as required.Cooling water pipe 353 is all connected same inlet water row/water pipe with all entrances of water cavity 356, outlet receive same go out saliva row/water pipe.
Above, reaction chamber assembly 100, heating component 200 and cooling package are described.Graphite plate 600 toasts in the reacting furnace 10 be made up of reaction chamber assembly 100, heating component 200 and cooling package.As shown in Figure 4, graphite plate 600 is placed in baking tray frock 500 with vertical position (namely disc face is in vertical position), to be moved down by automatic hoisting mechanism (not shown) when the bottom 130 of reaction chamber assembly 100 and after opening reaction chamber 150, baking tray frock 500 connects graphite plate 600 and is placed on bottom 130, bottom 130 rises subsequently, and being clamped on the downside of equipment platform by rotating clamping cylinder 180, thus off-response chamber 150.Subsequently, start to pass into reacting gas from air vent hole, activate heating component 200, reaction chamber 150 is heated up, the cooling package simultaneously comprising circulated air cooling system 310 and water cooling system 350 is opened, necessary cooling is carried out for participation radiation of light source part and heat conducting correlated parts, thus ensures the normal operation of reacting furnace 10 safety.
In reacting furnace 10 running, the temperature measurement component that siphunculus 115 from reaction hood 110 is pushed up extend in reaction hood 110 is monitored the temperature in reaction chamber 150, preferably, can monitor by subregion, according to the result measured, zonal control is carried out for the infrared lamp assembly 210 of heating component 200, thus enable the temperature of reaction chamber 150 obtain accurately, equably controlling.This reacting furnace 10 temperature in running can rise to the highest 800 DEG C from room temperature, preferably, in the course of reaction of reacting furnace, namely chlorine or gas chlorination thing are passed into carry out in the process of reacting in reaction chamber 150 from the siphunculus 115 reaction hood 110 is pushed up, and the in-furnace temperature of reacting furnace can be controlled in the scope of 500 DEG C-800 DEG C.
In addition, according to preferred embodiment of the present invention, reaction hood 110 is made up of quartz, for this reason, bottom 130 is also provided with a pressure detecting mouth, in order to reaction chamber 150 internal pressure in the inner space of detection reaction chamber component 100.For guarantee equipment normally runs, need to avoid the pressure reduction inside and outside quartz reaction cover 110 excessive.According to the pressure recorded from pressure detecting mouth, operating personnel can control the flow by such as nitrogen, chlorine or the chloride gas in the reaction hood 110 of reaction chamber assembly 100, thus cavity pressure is controlled roughly equal with the pressure in the wind chamber of circulated air cooling system 310, quartz reaction cover 110 can be avoided cracked.
Thus, the invention provides a kind of special etching roasting plant reacting furnace newly, this reacting furnace utilizes chlorine or gas chlorination thing, under the condition (within etching maximum temperature 800 degree) of uniform temperature, etching reaction is carried out to graphite plate or epitaxial substrate sheet, and finally reach the function that graphite plate surface is carried out to effective cleaning and effectively etched the bad epitaxial loayer on extension substrate slice surface, cleans.Single heat time of this reacting furnace is shorter, can control to complete within 3 hours; Simultaneously because of the size of reacting furnace and profile smaller, reasonably save the installation corresponding in cleaning shop and usage space.This reacting furnace decomposes gallium nitride residue by the mode of the chemical reaction under uniform temperature condition, postrun product dust granules is few, can be discharged in time in reacting furnace by exhaust emissions structure simultaneously, so can ensure that many heats rerun, reduce plant maintenance and clean frequency, the equipment of guarantee has higher service efficiency.
Although the present invention with preferred embodiment openly as above, it is not that any those skilled in the art without departing from the spirit and scope of the present invention, can make possible variation and amendment for limiting the present invention.Therefore, every content not departing from technical solution of the present invention, any amendment above embodiment done according to technical spirit of the present invention.
Claims (11)
1. one kind etches the reacting furnace (10) of roasting plant, and described reacting furnace comprises reaction chamber assembly (100), heating component (200) and cooling package, it is characterized in that,
Described reaction chamber assembly (100) comprises reaction hood (110) and reaction hood holder (120), described reaction hood (110) upside is provided with breather pipe (111), it is inner that reacting gas is input to described reaction hood (110) by described breather pipe (111), reaction hood (110) described in described reaction hood holder (120) fixed bearing; The bottom side of described reaction hood (110) is opened wide, and described reaction hood (110) is made up of quartz material, and graphite plate or epitaxial substrate sheet are placed in described reaction hood (110) with vertical state;
Described heating component (200) comprises infrared lamp assembly (210) and reflection plate assembly (220), described infrared lamp assembly (210) and reflection plate assembly (220) are arranged on described reaction hood (110) outside, and described infrared lamp assembly (210) comprises infrared lamp (212), the infrared lamp holder of supporting infrared lamp (212) and the reflecting plate of fixing infrared lamp holder;
Described cooling package surrounds described heating component (200) and arranges, described cooling package comprises circulated air cooling system (310) and water cooling system (350), and described water cooling system (350) comprises the cooling water pipe (353) be arranged on heating component (200) and the water cavity (356) being arranged in reaction hood holder (120).
2. the reacting furnace (10) of etching roasting plant as claimed in claim 1, it is characterized in that, described infrared lamp assembly (210) comprises multiple infrared lamp (212), and described multiple infrared lamp (212) is configured to shunt circuit to carry out zone temperature control.
3. the reacting furnace (10) of etching roasting plant as claimed in claim 1, it is characterized in that, described circulated air cooling system (310) is configured to pass into air-flow and cools, described water cooling system (350) is configured with cooling water pipe (353), and described cooling water pipe (353) passes into cooling water and cools.
4. the reacting furnace (10) of etching roasting plant as claimed in claim 3, it is characterized in that, described reflecting plate is arranged on upside and the surrounding side of reaction hood (110), the outside of described reflecting plate is fixed with coldplate (352), and described cooling water pipe (353) dish is located at the outside of coldplate (352).
5. the reacting furnace (10) of etching roasting plant as claimed in claim 3, it is characterized in that, described circulated air cooling system (310) comprising: the top pneumatic trough (312) being positioned at reaction chamber assembly (100) top; Be positioned at the bottom pneumatic trough (314) of reaction chamber assembly (100) below; Be communicated with the wind chamber between top pneumatic trough (312) and bottom pneumatic trough (314), wind chamber is positioned at reaction chamber assembly (100) and heating component (200) surrounding.
6. the reacting furnace (10) of etching roasting plant as claimed in claim 5, it is characterized in that, described circulated air cooling system (310) also comprises: heat exchanger, and described heat exchanger is connected to the downstream of described bottom pneumatic trough (314); And be serially connected in circulated air cooling system (310), that airflow circulating is moved air blast.
7. the reacting furnace (10) of etching roasting plant as claimed in claim 1, it is characterized in that, reaction chamber assembly (100) also comprises: openable bottom (130), this bottom (130) is provided with the exhaust gas channel (132) of reaction chamber that connection is positioned at described reaction chamber assembly (100), that hold graphite plate (600) or epitaxial substrate sheet, and bottom (130) is sealably coupled on reaction hood holder (120).
8. the reacting furnace (10) of etching roasting plant as claimed in claim 7, it is characterized in that, described circulated air cooling system (310) is configured to pass into air-flow and cools the parts in described reacting furnace, and described circulated air cooling system (310) comprises the top pneumatic trough (312) being positioned at reaction chamber assembly (100) top; Be positioned at the bottom pneumatic trough (314) of reaction chamber assembly (100) below; Be communicated with the wind chamber between top pneumatic trough (312) and bottom pneumatic trough (314), wind chamber is positioned at reaction chamber assembly (100) and heating component (200) surrounding,
Described bottom (130) is provided with pressure detecting mouth, and the flow passing into the reacting gas in described reaction hood (110) is controlled so as to make the pressure in the internal pressure of described reaction chamber and described wind chamber roughly equal.
9. the reacting furnace (10) of etching roasting plant as claimed in claim 1, it is characterized in that, in the running of reacting furnace, reacting gas is passed into by described breather pipe (111), described reacting gas comprise in chlorine and gaseous chlorine compounds one or more.
10. the reacting furnace (10) of the etching roasting plant as described in claim 1 or 9, is characterized in that, places a slice or two panels graphite plate in described reacting furnace.
11. the reacting furnace (10) of etching roasting plant as claimed in claim 1, it is characterized in that, described reacting furnace is configured to the in-furnace temperature in the course of reaction of described reacting furnace to control in the scope of 500 DEG C-800 DEG C.
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| CN105789084B (en) * | 2014-12-17 | 2019-04-23 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| KR102414617B1 (en) * | 2017-08-17 | 2022-07-01 | 삼성전자주식회사 | Apparatus for treating substrate and method for cleaning the apparatus |
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|---|
| 《MOCVD加热系统研究》;詹少彬;《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》;20100515;参见第2章第2.3节 第4章第4.3-4.4节 * |
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| CN103088412A (en) | 2013-05-08 |
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