CN103054594B - A kind of Automatic trigger exposure circuit of flat panel detector - Google Patents

A kind of Automatic trigger exposure circuit of flat panel detector Download PDF

Info

Publication number
CN103054594B
CN103054594B CN201210536942.2A CN201210536942A CN103054594B CN 103054594 B CN103054594 B CN 103054594B CN 201210536942 A CN201210536942 A CN 201210536942A CN 103054594 B CN103054594 B CN 103054594B
Authority
CN
China
Prior art keywords
discharge circuit
circuit
flat panel
photoelectric sensor
panel detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210536942.2A
Other languages
Chinese (zh)
Other versions
CN103054594A (en
Inventor
张振
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Yi Ruiguang electronic Polytron Technologies Inc
Original Assignee
SHANGHAI YIRUI OPTOELECTRONICS TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI YIRUI OPTOELECTRONICS TECHNOLOGY Co Ltd filed Critical SHANGHAI YIRUI OPTOELECTRONICS TECHNOLOGY Co Ltd
Priority to CN201210536942.2A priority Critical patent/CN103054594B/en
Publication of CN103054594A publication Critical patent/CN103054594A/en
Application granted granted Critical
Publication of CN103054594B publication Critical patent/CN103054594B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Measurement Of Radiation (AREA)

Abstract

The invention provides a kind of Automatic trigger exposure circuit of flat panel detector, comprising: the photoelectric sensor comprising the photoelectric receiving diode of multiple parallel connection; Being connected to described photoelectric sensor, for the both positive and negative polarity of photoelectric sensor being accessed respectively the positive-negative input end of one-level amplifier, differential amplification being carried out to the signal of telecommunication of photoelectric sensor; Be connected to described one-level discharge circuit, the secondary discharge circuit that the voltage signal for exporting one-level discharge circuit amplifies in the same way; Being connected to described secondary discharge circuit, for comparing voltage signal and the reference voltage of the output of secondary discharge circuit, and exporting the comparison circuit of the pulse signal for controlling flat panel detector exposure when described voltage signal is greater than described reference voltage.The present invention adopts the mode of multiple photoelectric receiving diode parallel connection, under low-down exposure dose, also can complete spectrum assignment, there is very high sensitivity, adopt differential amplification, effectively can reduce the interference of system to photoelectric sensor output signals, improve signal to noise ratio.

Description

A kind of Automatic trigger exposure circuit of flat panel detector
Technical field
The invention belongs to medical electronics field, particularly relate to a kind of Automatic trigger exposure circuit of flat panel detector.
Background technology
Since nineteen ninety-five releases First flat panel detector (flat panel detector) equipment, along with dull and stereotyped Detection Techniques take off in recent years, Flat digital X-ray detector is brought in Clinical practice from laboratory by all living creatures' business men and research worker, due to the high sensitivity that flat panel detector has, the advantages such as the low distortion of wide dynamic range and digitized image, clinical users is on the increase, also trend is universal gradually for plate technique, and Flat digital x-ray imaging technology becomes the core force causing the revolution of radiodiagnosis image.
In the research and development and production process of flat panel detector, dull and stereotyped Detection Techniques can be divided into directly and indirect two classes.Dull and stereotyped Detection Techniques achieve the development of leap in recent years, because the flat panel detector research and development of direct change type are comparatively complicated, earlier laboratory research can easily not be used for commercially producing, and the flat panel detector of indirect-converting type is produced comparatively convenient and easy by researching and developing commercial sizeization, so in early stage flat panel detector new product great majority adopt be all indirect conversion mode, but along with in recent years directly changing the breakthrough development of flat panel detector research and development, its technology is ripe gradually, a lot of companies is proposed the flat panel detector system product of the direct change type with more high image quality.
The flat-panel detector structure of indirect-converting type mainly adds the amorphous silicon layer with photoelectric receiving diode effect by scintillation material or fluorescent material layer and adds tft array and form.Its principle be scintillator or fluorescent material layer after X-ray exposure, be visible ray by x-ray photon conversion, then become electric image signal from the amorphous silicon layer with photoelectric receiving diode effect, finally obtain digital picture.
The exposure of X flat panel detector has external trigger and automatic exposure two kinds of modes, external trigger mode refers to that high tension generator controls flat panel detector exposure, the mode of internal trigger is, by scintillation material, X-ray is converted to visible ray, radiation of visible light photoelectric sensor output current, coordinate the last outputs level signals of interlock circuit, detector controls exposure according to this level signal.
The working method of external trigger requires that flat panel detector must be connected with high tension generator, have automatic exposure control function flat panel detector just can and high tension generator between connect, on-line operation is simple and convenient.
Auto-exposure control be divided into external and built-in, external be exactly photoelectric sensor and interlock circuit in the outside of flat panel detector, photoelectric sensor is placed on the surface of detector, and level signal is connected to detector by cable.Adopt external spectrum assignment, software processes must be carried out to flat panel detector photosensor region, the impact that filtering photoelectric sensor causes image, built-in spectrum assignment photoelectric sensor to be placed on below TFT detector image-forming without any impact, but because TFT and structural member absorb most X-ray, the light that photoelectric sensor receives is little, and relative output current signal is also very little.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of Automatic trigger exposure circuit of flat panel detector, for solving Automatic trigger exposure circuit of flat panel detector of the prior art, under low dose exposure, photoperceptivity is more weak, output current is too small and the problem that causes sensitivity lower.
For achieving the above object and other relevant objects, the invention provides a kind of Automatic trigger exposure circuit of flat panel detector, at least comprise:
Photoelectric sensor, comprises the photoelectric receiving diode of multiple parallel connection, for converting optical signal to the signal of telecommunication;
One-level discharge circuit, is connected to described photoelectric sensor, carries out differential amplification for the signal of telecommunication exported by described photoelectric sensor;
Secondary discharge circuit, is connected to described one-level discharge circuit, amplifies in the same way for the voltage signal exported described one-level discharge circuit;
Comparison circuit, is connected to described secondary discharge circuit, the voltage signal exported for more described secondary discharge circuit and reference voltage, and exports the pulse signal for controlling flat panel detector exposure when described voltage signal is greater than described reference voltage.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention, the photoelectric receiving diode of the multiple parallel connections described in described photoelectric sensor converts electric current to luminous energy simultaneously.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention, described photoelectric sensor comprises 1 ~ 10 photoelectric receiving diode in parallel.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention, described photoelectric sensor surface is coated with the scintillation material for X-ray being converted to visible ray.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention, described one-level discharge circuit is instrument amplifier, the positive input terminal of described instrument amplifier is connected to the positive pole of described photoelectric sensor, and instrument amplifier negative input end accesses the negative pole of described photoelectric sensor.
Further, described secondary discharge circuit is amplifier in the same way, and the positive input terminal of described amplifier is in the same way connected to the outfan of described one-level discharge circuit.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention, a limiter diode is connected with between described one-level discharge circuit and secondary discharge circuit, voltage signal for exporting described one-level discharge circuit carries out amplitude limit, the positive pole of described limiter diode is connected to the outfan of described one-level discharge circuit, minus earth.
Further, described limiter diode is Schottky diode.
As a kind of preferred version of Automatic trigger exposure circuit of flat panel detector of the present invention; one is also connected with for carrying out the pressure limiting diode of voltage-limiting protection to the voltage signal of described secondary discharge circuit output between described secondary discharge circuit and described comparison circuit; the positive pole of described pressure limiting diode is connected to the outfan of described secondary discharge circuit, and negative pole is connected to positive supply.
Further, described pressure limiting diode is Schottky diode.
As mentioned above, the invention provides a kind of Automatic trigger exposure circuit of flat panel detector, comprising: the photoelectric receiving diode comprising multiple parallel connection, for optical signal being converted to the photoelectric sensor of the signal of telecommunication; Be connected to described photoelectric sensor, the signal of telecommunication for being exported by described photoelectric sensor carries out the one-level discharge circuit of differential amplification; Be connected to described one-level discharge circuit, the secondary discharge circuit that the voltage signal for exporting described one-level discharge circuit amplifies in the same way; Be connected to described secondary discharge circuit, the voltage signal exported for more described secondary discharge circuit and reference voltage, and export the comparison circuit of the pulse signal for controlling flat panel detector exposure when described voltage signal is greater than described reference voltage.The present invention adopts the mode of multiple photoelectric receiving diode parallel connection, under low-down exposure dose, also can complete spectrum assignment, there is very high sensitivity, adopt differential amplification, effectively can reduce the interference of system to photoelectric sensor output signals, improve signal to noise ratio.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of built-in auto-exposure control flat panel detector of the present invention.
Fig. 2 is shown as the basic circuit structure schematic diagram of Automatic trigger exposure circuit of flat panel detector of the present invention.
Fig. 3 is shown as the basic circuit structure schematic diagram that flat panel detector of the present invention has the automatic trigger exposure circuit of amplitude limiter circuit.
Fig. 4 is shown as the particular circuit configurations schematic diagram that flat panel detector of the present invention has the automatic trigger exposure circuit of amplitude limiter circuit.
Element numbers explanation
13 structural members
12 TFT plates
11 carbon plates
10 automatic exposure control circuits
101 photoelectric sensors
1011 photoelectric receiving diodes
102 one-level discharge circuits
103 secondary discharge circuits
104 comparison circuits
105 exposure control units
106 limiter diodes
107 pressure limiting diodes
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 4.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 1 ~ Fig. 4, the present embodiment provides a kind of Automatic trigger exposure circuit of flat panel detector, described automatic exposure control circuit adopts unique built-in manner, namely described automatic exposure control circuit is placed on the inside of flat panel detector as shown in Figure 1, and described flat panel detector comprises structural member 13, the TFT plate 12 be covered on described structural member, be covered in the carbon plate 11 on described TFT plate and be installed in the automatic exposure control circuit 10 of said structure inside.
As shown in Fig. 2 ~ Fig. 4, described automatic exposure control circuit at least comprises:
Photoelectric sensor 101, comprises the photoelectric receiving diode 1011 of multiple parallel connection, for converting optical signal to the signal of telecommunication;
One-level discharge circuit 102, is connected to described photoelectric sensor 101, and the signal of telecommunication for being exported by described photoelectric sensor 101 converts voltage signal to and carries out differential amplification to it;
Secondary discharge circuit 103, is connected to described one-level discharge circuit 102, amplifies in the same way for the voltage signal exported described one-level discharge circuit 102;
Comparison circuit 104, be connected to described secondary discharge circuit 103, the voltage signal exported for more described secondary discharge circuit 103 and reference voltage, and the pulse signal for controlling flat panel detector exposure is exported when described voltage signal is greater than described reference voltage.
Described photoelectric sensor 101 surface-coated has the scintillation material for X-ray being converted to visible ray, and described scintillation material is the materials such as cesium iodide.In order to ensure sensitive volume, in the process of exposure, the photoelectric receiving diode of the multiple parallel connections in described photoelectric sensor 101 converts current signal to optical signal simultaneously, in the present embodiment, described photoelectric sensor 101 comprises 1 ~ 10 photoelectric receiving diode 1011 in parallel, adopt the mode of multichannel photoelectric receiving diode 1011 parallel connection effectively can improve the sensitivity of photoelectric sensor 101, the exposure control unit 105 that flat panel detector of the present invention still can control flat panel detector under surface is less than the dosage of 1.5nGy exposes.
Described one-level discharge circuit 102 is instrument amplifier, the positive input terminal of described instrument amplifier is connected to the positive pole of described photoelectric sensor 101, negative input end is connected to the negative pole of described photoelectric sensor 101, employing differential amplification can reduce the interference that system outputs signal photoelectric sensor 101, improves signal to noise ratio.Described secondary discharge circuit 103 is amplifier in the same way, the positive input terminal of described amplifier is in the same way connected to the outfan of described one-level discharge circuit 102, negative input end is connected to an external power source, and described amplifier is in the same way used for amplifying the voltage signal that described instrument amplifier inputs further.
In the present embodiment, a limiter diode is connected with between described one-level discharge circuit 102 and secondary discharge circuit 103, voltage signal for exporting described one-level discharge circuit 102 carries out amplitude limit, the positive pole of described limiter diode is connected to the outfan of described one-level discharge circuit 102, minus earth.In the present embodiment, described limiter diode adopts Schottky diode, can prevent heavy dose of exposure amplifier saturation.
One is also connected with for carrying out the pressure limiting diode of voltage-limiting protection to the voltage signal of described secondary discharge circuit 103 output between described secondary discharge circuit 103 and described comparison circuit 104; the positive pole of described pressure limiting diode is connected to the outfan of described secondary discharge circuit 103; negative pole is connected to positive supply; described pressure limiting diode can prevent from exporting supersaturation; in the present embodiment, described pressure limiting diode is Schottky diode.
In order to further illustrate effect of automatic exposure control circuit of the present invention, refer to Fig. 4, as shown in the figure, photoelectric sensor 101 output current of the present invention is I, equivalent resistance is R1, described instrument amplifier gain is A1, and the gain of secondary discharge circuit is in the same way A2, the voltage Vo2=I*R1*A1*A2 of the output of secondary discharge circuit 103.The voltage Vo2 exported and reference voltage Vf outputs level signals after relatively of described comparison circuit 104, detector controls exposure according to level signal, namely when Vo2 is greater than described reference voltage Vf, described comparison circuit 104 exports high level, the exposure control unit 105 controlling flat panel detector exposes, when Vo2 is less than described reference voltage Vf, described comparison circuit 104 output low level, the exposure control unit 105 of described flat panel detector does not expose.In a concrete implementation process, described photoelectric sensor 101 is in the temperature range of 0 ~ 60 degree Celsius, and the scope of its internal resistance R1 is 10M ~ 100M, and instrument amplifier gain is 100, and the gain of secondary discharge circuit 103 is 60, and the gain ranging for system is 6*10 10~ 6*10 12, the sensitivity testing this programme through reality is very high, under room temperature under flat panel detector surface is less than the dosage of 1.5nGy, still can control exposure.
In sum, the invention provides a kind of Automatic trigger exposure circuit of flat panel detector, comprising: the photoelectric receiving diode 1011 comprising multiple parallel connection, for optical signal being converted to the photoelectric sensor 101 of the signal of telecommunication; Be connected to described photoelectric sensor 101, the signal of telecommunication for being exported by described photoelectric sensor 101 carries out the one-level discharge circuit 102 of differential amplification; Be connected to described one-level discharge circuit 102, the secondary discharge circuit 103 that the voltage signal for exporting described one-level discharge circuit 102 amplifies in the same way; Be connected to described secondary discharge circuit 103, the voltage signal exported for more described secondary discharge circuit 103 and reference voltage, and the comparison circuit 104 exporting the pulse signal for controlling flat panel detector exposure when described voltage signal is greater than described reference voltage.The present invention adopts the mode of multiple photoelectric receiving diode 1011 parallel connection, also the spectrum assignment to described flat panel detector can be completed under low-down exposure dose, there is very high sensitivity, adopt differential amplification, effectively can reduce the interference that system outputs signal photoelectric sensor 101, improve signal to noise ratio.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.

Claims (6)

1. an Automatic trigger exposure circuit of flat panel detector, is characterized in that, at least comprises:
Photoelectric sensor, comprises the photoelectric receiving diode of multiple parallel connection, and for converting optical signal to the signal of telecommunication, the photoelectric receiving diode of the multiple parallel connections in described photoelectric sensor converts electric current to luminous energy simultaneously;
One-level discharge circuit, is connected to described photoelectric sensor, carries out differential amplification for the signal of telecommunication exported by described photoelectric sensor;
Secondary discharge circuit, is connected to described one-level discharge circuit, amplifies in the same way for the voltage signal exported described one-level discharge circuit;
Comparison circuit, is connected to described secondary discharge circuit, the voltage signal exported for more described secondary discharge circuit and reference voltage, and exports the pulse signal for controlling flat panel detector exposure when described voltage signal is greater than described reference voltage;
Described one-level discharge circuit is instrument amplifier, and the positive input terminal of described instrument amplifier is connected to the positive pole of described photoelectric sensor, and instrument amplifier negative input end accesses the negative pole of described photoelectric sensor;
Described secondary discharge circuit is amplifier in the same way, and the positive input terminal of described amplifier is in the same way connected to the outfan of described one-level discharge circuit.
2. Automatic trigger exposure circuit of flat panel detector according to claim 1, is characterized in that: described photoelectric sensor surface is coated with the scintillation material for X-ray being converted to visible ray.
3. Automatic trigger exposure circuit of flat panel detector according to claim 1, it is characterized in that: between described one-level discharge circuit and secondary discharge circuit, be connected with a limiter diode, voltage signal for exporting described one-level discharge circuit carries out amplitude limit, the positive pole of described limiter diode is connected to the outfan of described one-level discharge circuit, minus earth.
4. Automatic trigger exposure circuit of flat panel detector according to claim 3, is characterized in that: described limiter diode is Schottky diode.
5. Automatic trigger exposure circuit of flat panel detector according to claim 1; it is characterized in that: between described secondary discharge circuit and described comparison circuit, be also connected with one for carrying out the pressure limiting diode of voltage-limiting protection to the voltage signal of described secondary discharge circuit output; the positive pole of described pressure limiting diode is connected to the outfan of described secondary discharge circuit, and negative pole is connected to positive supply.
6. Automatic trigger exposure circuit of flat panel detector according to claim 5, is characterized in that: described pressure limiting diode is Schottky diode.
CN201210536942.2A 2012-12-12 2012-12-12 A kind of Automatic trigger exposure circuit of flat panel detector Active CN103054594B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210536942.2A CN103054594B (en) 2012-12-12 2012-12-12 A kind of Automatic trigger exposure circuit of flat panel detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210536942.2A CN103054594B (en) 2012-12-12 2012-12-12 A kind of Automatic trigger exposure circuit of flat panel detector

Publications (2)

Publication Number Publication Date
CN103054594A CN103054594A (en) 2013-04-24
CN103054594B true CN103054594B (en) 2015-08-19

Family

ID=48097716

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210536942.2A Active CN103054594B (en) 2012-12-12 2012-12-12 A kind of Automatic trigger exposure circuit of flat panel detector

Country Status (1)

Country Link
CN (1) CN103054594B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109884089A (en) * 2019-02-27 2019-06-14 上海奕瑞光电子科技股份有限公司 A kind of X-ray detector and automatic exposure monitoring method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105496431A (en) * 2014-09-26 2016-04-20 Ge医疗系统环球技术有限公司 X-ray imaging method and X-ray imaging system
CN106137233B (en) * 2015-04-09 2018-06-08 上海奕瑞光电子科技股份有限公司 The method that detector detects exposure automatically
CN105662443B (en) * 2015-12-31 2019-08-09 上海奕瑞光电子科技股份有限公司 Suitable for the X-ray synchronous method under pulse perspective
KR101855658B1 (en) * 2017-05-26 2018-06-08 주식회사 센소니아 Trigger circuit of x-ray photographing device having trigger valid peroid
CN107894951B (en) * 2017-11-01 2021-11-05 上海奕瑞光电子科技股份有限公司 Automatic testing method and system for flat panel detector software

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448729A (en) * 2002-03-28 2003-10-15 中国科学院高能物理研究所 Photodiode synchronous radiation X-ray beam bunching detecting process
CN102422135A (en) * 2009-05-05 2012-04-18 恩德莱斯和豪瑟尔两合公司 Radiometric measuring device for measuring a filling level or a density of a filling material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1348741A (en) * 2001-11-06 2002-05-15 浙江大学 Portable intelligent dynamic cardiograph
CN100518647C (en) * 2002-10-18 2009-07-29 株式会社东芝 Medical equipment managing apparatus for predicting its future state
US7869568B2 (en) * 2007-03-13 2011-01-11 Canon Kabushiki Kaisha Radiation imaging apparatus, and method and program for controlling radiation imaging apparatus
CN101366637B (en) * 2007-08-17 2010-12-08 深圳市蓝韵实业有限公司 Digitized radiation photography probe image capturing trigger gear and image capturing system
CN203069792U (en) * 2012-12-12 2013-07-17 上海奕瑞光电子科技有限公司 Automatic trigger exposure circuit of flat panel detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448729A (en) * 2002-03-28 2003-10-15 中国科学院高能物理研究所 Photodiode synchronous radiation X-ray beam bunching detecting process
CN102422135A (en) * 2009-05-05 2012-04-18 恩德莱斯和豪瑟尔两合公司 Radiometric measuring device for measuring a filling level or a density of a filling material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109884089A (en) * 2019-02-27 2019-06-14 上海奕瑞光电子科技股份有限公司 A kind of X-ray detector and automatic exposure monitoring method
CN109884089B (en) * 2019-02-27 2022-02-18 上海奕瑞光电子科技股份有限公司 X-ray detector and automatic exposure monitoring method

Also Published As

Publication number Publication date
CN103054594A (en) 2013-04-24

Similar Documents

Publication Publication Date Title
CN103054594B (en) A kind of Automatic trigger exposure circuit of flat panel detector
CN106547010B (en) X-ray flat panel detector based on automatic exposure
CN103336293B (en) A kind of method optimizing liquid scintillation bulk detector examination neutron and gamma ability
CN107422359A (en) A kind of measuring method of the neutron gamma dosage based on liquid scintillation bulk detector
CN102288982B (en) Scintillator-based two-dimensional position detection system
CN103135123A (en) Measuring method and measuring device of environmental X and gamma radiation based on silicon photomultiplier
KR101864716B1 (en) The smart thin plastic scintillator measuring radiation emitting by alpha, beta and gamma
CN203069792U (en) Automatic trigger exposure circuit of flat panel detector
CN203385484U (en) Single-photon counting device
CN103135120A (en) Measuring method and measuring device of regional gamma radiation based on silicon photomultiplier
JP2018508763A (en) Composite scintillation crystal, composite scintillation detector and radiation detector
CN102944890B (en) PS-PMT (position sensitive-photomultiplier tube) based detector signal readout method and system
CN102183778B (en) A kind of scintillation detector
CN105496432A (en) Anti-universe ray system for internal exposure measurement and anti-coincidence method
KR20160060506A (en) Method for counting photon, apparatus using the same, and radiographic imaging apparatus
CN112213763A (en) Gamma dose monitoring devices based on long-range wireless communication
CN203705647U (en) Detection circuit for low-energy radio isotope
CN106405623B (en) Compton sums it up spectrometer
CN102253404A (en) Portable neutron detection device
CN109907770A (en) A kind of X-ray detector and charge emptying method
CN203981890U (en) A kind of X ray flat-panel detector structure
CN202533589U (en) Plastic scintillator detector for radiation detection
CN202210159U (en) Portable neutron detection device
CN109884089A (en) A kind of X-ray detector and automatic exposure monitoring method
CN206402637U (en) It is a kind of to strengthen the structure of flat panel detector ground connection and EMI shield effectivenesses

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room

Patentee after: Shanghai Yi Ruiguang electronic Polytron Technologies Inc

Address before: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room

Patentee before: Shanghai Yirui Optoelectronics Technology Co., Ltd.