CN103022166A - Solar cell taking copper-clad aluminum wire as back electrode and producing process of solar cell - Google Patents
Solar cell taking copper-clad aluminum wire as back electrode and producing process of solar cell Download PDFInfo
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Abstract
The invention discloses a solar cell taking a copper-clad aluminum wire as a back electrode and a producing process for the solar cell, and belongs to the field of solar cells. In the prior art, a metal grid is used as an electrode, and the material cost of common aluminum or silver is high. The solar cell comprises a substrate, wherein a first heavily-doped crystalline silicon layer is located on the substrate; a lightly-doped crystalline silicon layer is located on the first heavily-doped crystalline silicon layer; a second heavily-doped silicon layer is located on the lightly-doped crystalline silicon layer; a front electrode grid is located on the second heavily-doped crystalline silicon layer; and a back electrode grid is located on the back surface of the substrate. The solar cell is characterized in that the aluminum electrode grid is clad with a copper layer which is more conductive than aluminum by means of substitution reaction so as to improve the conductivity of the electrode grid; after a silver wire of the front electrode grid is clad with a copper layer, silver consumption amount can be reduced; good conductivity of the front electrode and good conductivity of the back electrode are both ensured; and simultaneously, production cost is reduced.
Description
Technical field
The present invention relates to the relevant technical scheme of a kind of solar cell.More particularly, a kind of on ESF epitaxial silicon film to cover the copper aluminum steel as solar cell and the production technology thereof of backplane.
Background technology
Owing to using fossil fuel to cause the cost of negative environmental impact and its rising to cause eager demand clean, cheap alternative energy source.In multi-form alternative energy source, solar energy because of it clean and wide usability appreciated.
Solar cell utilizes photoelectric effect to convert light to electric energy.Basic solar battery structure comprises single p-n junction, p-i-n/n-i-p and many knots.Typical unijunction p-n junction structure comprises p-type doped layer and N-shaped doped layer.Unijunction p-n junction solar cell has homojunction and two kinds of structures of heterojunction.P-type doped layer and N-shaped doped layer all are made of analog material (band gap of material equates).Heterojunction structure comprises that the material with different band gap is two-layer at least.The p-i-n/n-i-p structure comprise p-type doped layer, N-shaped doped layer and be sandwiched in the p layer and the n layer between intrinsic semiconductor layer (the i layer does not mix).Multijunction structure comprises a plurality of semiconductor layers with different band gap, and described a plurality of stacked semiconductor layers are on top of each other.
In solar cell, light is absorbed near p-n junction.The carrier diffusion of gained enters described p-n junction and is separated by internal electric field thus, thereby generates the electric current that passes described device and external circuit system.A major criterion determining the solar cell quality is its energy conversion efficiency, and energy conversion efficiency is defined as the ratio between the power of the power of changing (converting electric energy to from the light that absorbs) and collection when solar cell is connected to circuit.
Fig. 1 has provided explanation crystalline silicon (c-Si) and has been the solar cell (prior art) of substrate homojunction.Solar cell 100 comprises a front termination electrode 102,104, one N-shaped 106 silicon emission layer of the silicon nitride of reflection-proof (SiN) layer, p-type crystalline silicon substrate 108, and aluminium (Al) backplate 110.Arrow among Fig. 1 represents the sunlight of incident.Note that by aluminium to form backplate 110, standard technology comprises silk screen printing and aluminum sinter.Aluminium and silicon form eutectic alloy in 577 ℃ of sintering procedures, and according to aluminium silicon phasor, aluminium silicon can form liquid.Many Impurity Absorption layers have been served as in the aluminium silicon area of fusing.Form P+back surface field (BSF) by aluminium, form barrier and reduce few subflow to the back side of solar cell.The whole back that it should be noted that solar cell must guarantee to have enough aluminium to work as the protective layer at the back side.
According to investigation of industries, silicon metal silicon chip solar cell has occupied nearly 90% the market share.Yet the cost of traditional solar energy level silicon is far above $ 100/kg, and this cost that has driven solar cell is every watt of $ 3-$ 4(Wp).Except the cost of solar energy-level silicon wafer, needing a large amount of aluminium to contain whole rear surface of solar cell is that backplate is used, and the cost of aluminium also is quite to show.
Therefore, a kind of defencive function that can guarantee aluminium lamination need to be found, the technical scheme of the consumption of aluminium can be reduced again.
In addition, available technology adopting silver line is as the scheme of front electrode, and the consumption of silver also can cause the solar cell cost to increase.
Summary of the invention
The technical assignment of the technical problem to be solved in the present invention and proposition is to overcome the existing high defective of solar cell cost, provide a kind of and cover copper for reducing backplate grid aluminium consumption and front end electrode grid silver consumption, thus reduce production costs to cover the copper aluminum steel as solar cell and the production technology thereof of backplane.For this reason, the present invention adopts following technical scheme.
To cover the copper aluminum steel as the solar cell of backplane, comprise: substrate, first heavily doped crystallizing silicon layer is positioned on the substrate, the light dope crystallizing silicon layer is positioned on first heavily doped crystallizing silicon layer, second heavily doped silicon layer is positioned on the lightly doped crystallizing silicon layer, and the front end electrode grid is positioned on the second heavily doped crystallizing silicon layer, and the backplate grid are positioned at the back side of substrate, it is characterized in that described backplate grid comprise aluminum steel, described aluminum-wire layer is covered with the copper layer outward.
For the improving and replenishing of technique scheme, can increase following technical characterictic or its combination.
Described front end electrode grid comprises silver-colored line, and described silver-colored line layer is covered with the copper layer outward.
Described aluminum steel comprises aluminium and one or more following material: vitreum, silver, palladium, chromium, zinc and tin.
Described substrate is the MG-Si substrate.In one embodiment, adopt metallurgical grade (MG-Si) silicon substrate.
Described backplate gate pattern comprises one or more: straight line, cross spider, meander line and circle.Therefore electrode grid can be selected single or combination pattern according to actual needs.
Described heavily doped ground floor silicon metal and lightly doped crystallizing silicon layer are that p-type is mixed, and wherein second heavily doped crystallizing silicon layer is that N-type is mixed.
Also deposit insulating barrier on the second heavily doped crystallizing silicon layer described in a kind of embodiment.
Described insulating barrier comprises at least silicon dioxide, one of silicon nitride and SiOxNy.The dielectric stack lamination comprises silicon dioxide at least in one embodiment, a kind of in silicon nitride and the silicon-oxygen nitride (SiOxNy).
To cover the copper aluminum steel as the production technology of the solar cell of backplane, comprise: at the crystalline silicon of the BSF of ground floor substrate deposition of heavily doped, at the basic layer of the lightly doped crystal silicon layer conduct of heavily doped crystalline silicon deposition one deck, deposit second layer heavy doping crystal silicon layer as emitter layer at lightly doped crystal silicon layer, make electrode grid at the substrate front end, the step of making the aluminum steel electrode grid and outside described back aluminium line electrode grid, covering the copper layer at the back side of substrate.
For the improving and replenishing of above-mentioned production technology, can increase following technical characterictic or its combination.
The step that described back aluminium line electrode grid cover the copper layer outward adopts the fusion sediment method: will make the substrate high-temperature heating to 630 of aluminum steel electrode grid ~ 650 ℃, and make aluminum steel be molten state, and spraying copper chloride powder, after aluminium cements out copper, the washing substrate.Can control the displacement of aluminium and copper by the amount of control spraying copper chloride powder, thereby realize that integral body at electrode grid does not have that the part aluminium on the aluminum steel is substituted by copper in the situation of significant change, forms and covers copper aluminum steel electrode grid.
On the basis of aforementioned techniques scheme, can and/or make in the electrode grid step at the substrate front end described among the embodiment, the front end electrode grid adopts silver-colored line to make, and at the outer surface self-selectively copper electroplating layer of silver-colored line electrode grid.
Described backplate grid are solderabilities, and wherein the backplate grid form and use a single print steps.
Production technology among the embodiment also can comprise: the step of depositing insulating layer on the second heavily doped crystallizing silicon layer.
Described insulating barrier comprises successively the passivation layer of deposition and the step of anti-reflecting layer.
Described insulating barrier adopts at least silicon dioxide, and one of silicon nitride and SiOxNy deposit.
The heavily doped crystallizing silicon layer of described ground floor and lightly doped crystallizing silicon layer use chemical vapour deposition technique (CVD) technology.
Described backplate grid form and use silk screen printing or successively printing of colloidal sol coating.
The present invention covers one deck than the aluminium copper layer of easy conductive more by displacement reaction at the aluminium electrode grid on the basis of existing backplate grid, therefore can improve the conductivity of electrode grid; Further, at the upper outside copper layer that covers of the silver-colored line of front end electrode grid, can reduce the consumption of silver, when guaranteeing that front end and backplate all have good conductivity, reduce production costs.
Description of drawings
Example explanation of Fig. 1 is take the homojunction solar cell (prior art) of crystalline silicon substrate as the basis.
The structure of solar cell of the present invention that Fig. 2 has proposed a marginal data.
Fig. 3 is the flow chart of a production technology embodiment of solar cell of the present invention.
Embodiment
Below in conjunction with specification drawings and specific embodiments outstanding substantive distinguishing features of the present invention and significant progress are further described.
Present following description so that any person skilled in the art can realize and use the present invention, and in the situation that concrete the application with its requirement provides following description.Under prerequisite without departing from the spirit and scope of the present invention, the various modifications of disclosed execution mode be one skilled in the art will readily appreciate that, and the rule that limits herein can be applied to other execution modes and application scenario.Therefore, the execution mode that the invention is not restricted to illustrate, but consistent with the most wide in range scope of claims.
Fig. 2 is one embodiment of the present of invention, provides with Cu to cover solar cell and the production technology thereof that the Al grid are made backplate.A heavy doping p-type crystal silicon thin film is deposited upon on metallurgical grade silicon (MG-Si) substrate and forms carries on the back surface field (BSF), and the crystalline silicon of thin layer light dope p-type is deposited on and forms a basal layer on the BSF layer.Then the crystal silicon layer of available deposition of heavily doped N-shaped or higher temperature diffusion N-shaped dopant spread to form emitter layer such as phosphorus.Dielectric layer stack is with one or more silicon-oxygen nitrides (SiOxNy), silicon dioxide (SiO
2) and rich hydrogen silicon nitride when passivation and anti-reflecting layer.Backplate is the aluminum steel by silk screen printing or colloidal sol coating and printing, replaces to have used aluminum-wire layer to cover the solar cell at the whole back side, thereby has reduced manufacturing cost.Electrode grid is covered with the copper layer outward overleaf, improves the electric conductivity of backplate, and the front end electrode grid is covered with the copper layer outward, further reduces the consumption of silver, reduces production costs.
Fig. 2 illustrates a figure process of making solar cell according to the present invention has been described.
In Fig. 2 A, prepare a MG-Si substrate 200.Because MG-Si is more cheap than crystalline silicon, can showing with MG-Si substrate making solar cell and to reduce production costs.And the purity of MG-Si is generally 98% and 99.99%.For guaranteeing to make subsequently the high conversion efficiency of solar cell, MG-Si substrate desired purity needs 99.9% or high-purity more.In addition, the MG-Si substrate surface is needed further to purify.In one embodiment, MG-Si substrate 200 is the logical hydrogen (H of chemical vapor deposition chamber (CVD) between 1100 ℃ to 1250 ℃
2) toast under the environment, to eliminate natural oxidizing layer.After this, in identical temperature, introduce hydrogen chloride gas and enter CVD chamber proposition MG-Si substrate 200 surperficial residual metal impurity, thereby prevent that further Impurity Diffusion is to the crystal silicon thin film of subsequent step.Because metal impurities such as iron, have higher diffusion coefficient under this temperature, metal impurities often move to substrate 200 surfaces, and react with hydrogen chloride gas, form unsettled chlorine compound.The high volatile volatile compound uses and removes gas (such as H
2) can effectively remove chlorine compound.Note that the metal impurities extract technology can be applicable to the CVD chamber of crystal silicon thin film growth thereafter, or in another independently boiler tube system execution.The metal impurities leaching process may need 1 minute to 120 minutes.MG-Si substrate 200 can be that p-type is mixed or N-shaped mixes.In one embodiment, MG-Si substrate 200 is that p-type is mixed.
In Fig. 2 B, (doping content is greater than 1 * 10 in very thin one deck heavy doping
17/ cm
3) crystalline silicon 202 epitaxial growths are at MG-Si substrate surface 200.There is at present several different methods to can be used for epitaxial growth crystal silicon thin film 202 on the MG-Si substrate 200.In one embodiment, use plasma reinforced chemical vapour deposition (PECVD) growth amorphous silicon membrane.Silicon compound, for example SiH
4, SiH
2Cl
2And SiHCl
3, can be used for forming in the chemical vapour deposition (CVD) crystal silicon thin film 202.In one embodiment, in by SiHCl
3(TCS) its amount reaches greatly low-cost and is widely used.Crystal silicon thin film 202 can be that p-type is mixed or N-shaped mixes.In one embodiment, the doping of boron makes film 202 form p-type.These film 202 doping contents can reach 1 * 10
17/ cm3 to 1 * 10
20/ cm
3, and film thickness 202 can reach 1 to 8 micron.Because crystal silicon thin film 202 is heavy doping, it can treat as the barrier of back surface field (BSF) and minority carrier, thereby minimizing is in the minority carrier recombination of depositing operation subsequently.Because the existence of BSF layer is so that 202 aluminium back surface field layers (BSF) are unnecessary.Because only as the electrode contact purposes, do not need to cover whole solar cell back with Al.Therefore only need the aluminum metal of part area to be printed in cell backside.
In Fig. 2 C, one deck light dope is (less than 5 * 10
17/ cm
3) crystalline silicon 204 epitaxial film length are on 202 layers.This layer epitaxial film 204 growth techniques can similarly be 202 used epitaxial films.Same crystalline silicon film 204 can be that p-type is mixed or N-shaped mixes.In one embodiment, crystalline silicon film 204 is that lightly doped p-type is mixed, such as boron.These crystalline silicon film 204 doping contents can be 5 * 10
15/ cm
3To 5 * 10
17/ cm
3, and crystalline silicon film thickness 204 can be between 5 to 100 microns.It should be noted that and compare traditional solar cell, it uses crystal silicon chip as basal layer, and take the extension crystal silicon thin film as basal layer, thickness is far below crystalline silicon wafer in the implementation method of the present invention.Therefore, the manufacturing cost of solar cell can significantly reduce.
In Fig. 2 D, 204 surface wool manufacturings can maximize solar cell light pipette, thereby further improve conversion efficiency.Surface wool manufacturing can prepare with plasma etching and wet chemical etching technique technology.The etching gas that uses in the dry plasma etching includes but not limited to: SF6, F2 and NF3.The wet-chemical etching agent can be alkaline solution.The shape on matte surface, but pyramid or inverted pyramid, they are random or rule is distributed in membrane surface 204.
In Fig. 2 E, a heavy doping crystalline silicon veneer forms a reflector 206 in basic unit 204.Mix type according to different basement membrane 204, emission layer 206 can be that N-shaped mixes or p-type is mixed.In one embodiment, emitter layer 206 is that heavily doped N-shaped mixes, such as phosphorus.206 layers emitter doping content can be 5 * 10
17/ cm
3To 5 * 10
20/ cm
3In one embodiment, reflector can form 206 layers or form the diffusion of mixing simultaneously of 204 basement membranes in the CVD chamber by diffusion ion.At further execution mode, emitter layer 206 can be used such as pecvd process and prepare.
In Fig. 2 F, the silicon dioxide layer 208 of thin layer is deposited on the emitter layer 206.The oxidation technology that forms silicon dioxide layer 208 comprises the thermal oxidation technology that use is different, rapid thermal oxidation (RTO) and wet oxidation.For example at the logical oxygen (O in 700 to 1050 ℃ of reflectors, 206 surfaces
2) formation silicon dioxide layer 208.Silicon dioxide layer 208 thickness are can be 10 and 300, preferably between 100 and 200.Silicon dioxide layer 208 can further reduce the minority carrier surface recombination, because the interstitial defect of silicon face can be effectively removed in the growth of oxidation, thus passivation unsaturation dangling bonds.
In Fig. 2 G, thicker silicon nitride layer 210 is deposited on the silicon dioxide layer 208.Be used for deposited silicon nitride layer 210 technology: including but not limited to: PECVD, the evaporation of magnetron sputtering and electron beam.Except surface passivation, silicon nitride layer 210 also serves as anti-reflection layer.In order effectively to reduce reflection of light, silicon nitride layer 210 thickness are between 500 and 1000.Except the silicon nitride other materials, such as zinc sulphide and titanium dioxide, also can be used for preparing anti-reflecting layer.
In Fig. 2 H, the metal grill 212 in a front is above the silicon nitride layer 210 that silver is imprinted on by silk screen printing.In screen printing process, silver-colored line is the half tone by pattern, has formed the metal pattern of the front surface of solar cell.In further execution mode, the metal grill 212 of front end is by containing the printing of vitreum elargol.
Fig. 2 I top view has illustrated front electrode 212.Front electrode 212 comprises main grid 216 and 218, and thin grid are such as 220 and 222.The main grid metal is thicker and be directly connected to outside lead, and the thin thin bonding jumper of grid is sent to main grid with the electric current of collecting.
In Fig. 2 J, form the thin grid 214 of back metal at MG-Si substrate 200 with silk screen printing or colloidal sol coating and printing aluminium.Fig. 2 K has illustrated the outward appearance of solar cell bottom.Note that the thin grid of aluminium all do not cover the back side of solar cell, the welding main grid is given in spacing.It is also noted that, except straight line, the thin grid of aluminium also can be taked other geometric formats, include but not limited to: cross spider, zigzag and circle.In some embodiments, the thin grid of aluminium form irregular pattern.Between the thin gate resistance rate of aluminium and aluminium cost, average out.In one embodiment, the thin grid of aluminium cover about 10% rear surface of solar cell area.Use 10% aluminium because only have, and entirely compared by the cost of aluminium technique manufacturing, the solar cell cost of the back aluminium electrode of patterning is lower.
In Fig. 2 L, main grid is printed on MG-Si substrate 200 back sides.224 with are connected main grid and connect outer lead and collect from the electric current of the thin grid of aluminium.In one embodiment, form back metal main grid 224 and 226 with silk screen printing or colloidal sol coating and printing silver.
In some embodiments, realize both to be combined into a single operating procedure, the thin grid and the main grid that print off simultaneously in the step of Fig. 2 J and Fig. 2 L structure.Because aluminium is not good welding material, in some embodiments, (aluminium, the mixture of vitreum and solvent) and one or more other hybrid metals include but not limited to: silver, palladium, chromium, zinc and tin.Operating procedure that can be single, the thin grid and the main grid that print off simultaneously.
In Fig. 2 M, the metal grill 212 of front end and the metal grill 214 at the back side burn altogether being higher than under 500 ℃ the temperature conditions, form the front and back ohmic contact.Therefore, positive metal grill 212 becomes front electrode 228 and 214 and becomes backplate 230.Traditionally, in order to form good front electrode 228 and emitter layer 206 ohmic contact, open silicon dioxide layer 208 and silicon nitride layer 210 windows with photoetching process.Photoetching process is costliness rather than low-cost and is not suitable for large-scale solar cell manufacturing.Yet, when silver-colored line in high-temperature sintering process can have a good ohmic contact by silicon dioxide layer 208 and silicon nitride layer 210 and emitter layer 206.
Fig. 2 N is the cross-sectional view at A place among Fig. 2 L, with making the substrate high-temperature heating to 630 of aluminum steel electrode grid ~ 650 ℃, makes aluminum steel be molten state, spraying copper chloride powder, and after aluminium cements out copper, the washing substrate.And/or in the dargyrome of front end electroplating surface layer of copper 232 especially, form copper capping layer on the surface of metal wire.After the aluminum steel at the back side covered copper like this, electric conductivity was better, and can reduce silver-colored line consumption and reduce cost.
Fig. 2 O is the cross-sectional view at B place among Fig. 2 L, electroplates layer of copper 232 at the dargyrome lattice of front end and/or the aluminum steel grid outer surface at the back side, and copper only covers the surface of silver, aluminum metal lines.
Use with MG-Si substrate and patterning backplate greatly reduces manufacturing cost, is lower than $ 1/Wp thereby the price of solar cell manufacturing might be reduced to.A heavily doped crystal silicon layer serves as the efficient that BSF has guaranteed to make solar cell〉17%.
Except saving manufacturing cost, the backplate of use patterning can solve because of the stress of thicker aluminium film and cause the cell piece warpage issues.Therefore thinner (＜50 microns) substrate also can use.
Among Fig. 3, a kind of embodiment of production technology of the present invention, adopt P type crystalline silicon wafer as substrate, at the heavily doped crystalline silicon of the BSF of substrate deposition ground floor, then at the basic layer of the lightly doped crystal silicon thin film layer conduct of heavily doped crystalline silicon deposition one deck, deposit second layer heavy doping crystal silicon layer as emitter layer at lightly doped crystal silicon thin film layer again, then on the second heavily doped crystal silicon film layer successively the cvd silicon oxide film as passivation layer and silicon nitride film as anti-reflecting layer, then use silk screen printing or colloidal sol to be coated with the successively silver electrode grid of printed back aluminum steel electrode grid and front end, can be chosen at last on the aluminum steel electrode grid by fusion sediment method covering copper layer and/or simultaneously self-selectively electro-coppering on the silver-colored line electrode grid of front end.
Shown in above Fig. 2,3 take cover the copper aluminum steel as solar cell and the production technology thereof of backplane be specific embodiments of the invention, embodied outstanding substantive distinguishing features of the present invention and significant progressive, can be according to the use needs of reality, made amendment in the aspects such as the shape of electrode grid, specification, material, thickness, arrangement mode, seldom give unnecessary details at this.
Description to content before the embodiments of the present invention only is used for explanation and description.They have no intention limit or limit the invention to the form of announcement.Therefore, for this area working technical staff, many modifications and variations are obvious.Therefore, top disclosing has no intention to limit the present invention.Scope of the present invention is limited by the accompanying claims.
Claims (17)
1. to cover the copper aluminum steel as the solar cell of backplane, comprise: substrate, first heavily doped crystallizing silicon layer is positioned on the substrate, the light dope crystallizing silicon layer is positioned on first heavily doped crystallizing silicon layer, second heavily doped silicon layer is positioned on the lightly doped crystallizing silicon layer, and the front end electrode grid is positioned on the second heavily doped crystallizing silicon layer, and the backplate grid are positioned at the back side of substrate, it is characterized in that described backplate grid comprise aluminum steel, described aluminum-wire layer is covered with the copper layer outward.
2. according to claim 1 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described front end electrode grid comprises silver-colored line, described silver-colored line layer is covered with the copper layer outward.
3. according to claim 1 and 2 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described aluminum steel comprises aluminium and one or more following material: vitreum, silver, palladium, chromium, zinc and tin.
4. according to claim 1 and 2 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described substrate is MG-Si substrate.
5. according to claim 1 and 2 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described backplate gate pattern comprises one or more: straight line, cross spider, meander line and circle.
6. according to claim 1 and 2 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described heavily doped ground floor silicon metal and lightly doped crystallizing silicon layer are that p-type is mixed, wherein second heavily doped crystallizing silicon layer is that N-type is mixed.
7. according to claim 1 and 2 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that also depositing insulating barrier on the described second heavily doped crystallizing silicon layer.
8. according to claim 8 to cover the copper aluminum steel as the solar cell of backplane, it is characterized in that described insulating barrier comprises at least silicon dioxide, one of silicon nitride and SiOxNy.
9. to cover the copper aluminum steel as the production technology of the solar cell of backplane, comprise: at the heavily doped crystalline silicon of the BSF of substrate deposition ground floor, at the basic layer of the lightly doped crystal silicon layer conduct of heavily doped crystalline silicon deposition one deck, deposit second layer heavy doping crystal silicon layer as emitter layer at lightly doped crystal silicon layer, make electrode grid at the substrate front end, the step of making the aluminum steel electrode grid and outside described back aluminium line electrode grid, covering the copper layer at the back side of substrate.
10. according to claim 9 to cover the copper aluminum steel as the solar cell of backplane and the production technology of production technology thereof, it is characterized in that the step that described back aluminium line electrode grid cover the copper layer outward adopts the fusion sediment method: will make the substrate high-temperature heating to 630 of aluminum steel electrode grid ~ 650 ℃, make aluminum steel be molten state, spraying copper chloride powder, after aluminium cements out copper, the washing substrate.
11. according to claim 9 to cover the copper aluminum steel as the solar cell of backplane and the production technology of production technology thereof, it is characterized in that described in substrate front end making electrode grid step, the front end electrode grid adopts silver-colored line to make, and at the outer surface self-selectively copper electroplating layer of silver-colored line electrode grid.
12. it is characterized in that to cover the copper aluminum steel as the production technology of the solar cell of backplane described backplate grid are solderabilities according to 9 or 10 or 11 claims are described, wherein the backplate grid form and use a single print steps.
13. according to claim 12 to cover the copper aluminum steel as the production technology of the solar cell of backplane, characterized by further comprising: the step of depositing insulating layer on the second heavily doped crystallizing silicon layer.
14. according to claim 13 to cover the copper aluminum steel as the production technology of the solar cell of backplane, it is characterized in that described insulating barrier comprises successively the passivation layer of deposition and the step of anti-reflecting layer.
15. according to claim 14ly it is characterized in that to cover the copper aluminum steel as the production technology of the solar cell of backplane described insulating barrier adopts at least silicon dioxide, one of silicon nitride and SiOxNy deposit.
16. according to claim 15 to cover the copper aluminum steel as the production technology of the solar cell of backplane, it is characterized in that the heavily doped crystallizing silicon layer of described ground floor and lightly doped crystallizing silicon layer use chemical vapour deposition technique (CVD) technology.
17. according to claim 15 to cover the copper aluminum steel as the production technology of the solar cell of backplane, it is characterized in that described backplate grid form use silk screen printing or successively printing of colloidal sol coating.
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